KR20080062308A - Organic electroluminescence display device and method for fabricating the same - Google Patents

Abstract

An organic electroluminescence display device and a method of fabricating the same are provided to prevent damage of ITO(Indium Tin Oxide) due to an etchant when patterning contact electrodes by forming anti-oxidation films with a lift-off method after forming the contact electrodes with metal. A gate line, a data line, and a power supply line are formed in an active region of a first substrate to define a sub pixel. A switching thin film transistor and a driving thin film transistor are formed in the sub pixel. A first contact electrode(141) is connected to the driving thin film transistor. A gate pad(122) and a data pad(125) are formed in pad regions by being extended from the gate line and the data line respectively. A second contact electrode(142) and a first anti-oxidation film are sequentially stacked on the gate pad to be in contact with the gate pad. A third contact electrode(143) and a second anti-oxidation film(152) are sequentially stacked on the data pad to be in contact with the data pad. A first electrode, an organic light emitting layer, and a second electrode are sequentially stacked on a second substrate bonded to the first substrate.

Description

Organic electroluminescent device and manufacturing method therefor {Organic Electroluminescence Display Device And Method For Fabricating The Same}

1 is an equivalent circuit diagram of an organic electroluminescent device.

2 is a cross-sectional view of an organic electroluminescent device according to the prior art.

3 is a cross-sectional view of an organic electroluminescent device for explaining the problems of the prior art.

4 is a cross-sectional view of an organic electroluminescent device according to the present invention.

5A to 5E are cross-sectional views of an organic electroluminescent device according to the present invention.

* Explanation of symbols on the main parts of the drawings

111 substrate 112a gate electrode

114: active layer 115a: source electrode

115b: drain electrode 116: protective film

122: gate pad 125: data pad

132: dummy pattern 135: VDD pad

141, 142, 143, and 144, contact electrode 152, first antioxidant film

155: second antioxidant film 159: photoresist pattern

The present invention relates to an electroluminescent display device (hereinafter referred to as ELD), and more particularly, to an organic electroluminescent device manufactured by a top emission dual plate structure in which a thin film transistor array unit and an organic electroluminescent unit are formed on separate substrates; It relates to a manufacturing method.

In recent years, research on flat panel displays has been actively conducted. Among them, liquid crystal displays (LCDs), field emission displays (FEDs), electroluminescence devices (ELDs), and plasma display panels (PDPs) have been in the spotlight.

Among them, liquid crystal display devices are widely used in personal information terminals, laptops, and TVs, including personal communication service (PCS). However, due to the problem that the viewing angle is narrow and the response speed is slow, self-luminous organic electroluminescent devices are attracting attention. have.

The organic electroluminescent device applies an electric field to the cathode and the anode formed at both ends of the organic light emitting layer to inject and transfer electrons and holes in the organic light emitting layer to bond with each other, thereby preventing the electroluminescence (EL) phenomenon emitted by the binding energy at this time. It is used. That is, after electrons and holes are paired, light is emitted while falling from an excite state to a ground state.

Such an organic electroluminescent device has an advantage of being able to adapt to various tastes of modern people because it can realize a low voltage driving due to thinning and fast response speed and excellent brightness. In addition, the device may be formed on a flexible transparent substrate such as plastic.

In addition, the device is suitable for the next-generation flat panel display because it can be driven at low voltage, has relatively low power consumption, and can easily realize three colors of green, red, and blue.

Hereinafter, the basic structure and operation characteristics of the active matrix organic light emitting display device will be described in detail with reference to the accompanying drawings.

1 is an equivalent circuit diagram of an organic electroluminescent device, and FIG. 2 is a cross-sectional view of an organic electroluminescent device according to the prior art.

As shown in FIG. 1, a vertically crossing gate line GL and a data line and a power supply line PSL spaced apart from the data line by a predetermined distance are formed to form one subpixel region ( SP).

A switching TFT (SwT), which is an addressing element, is formed at an intersection point of the gate wiring and the data wiring, and the switching thin film transistor SwT and the storage capacitor CST connected to the power supply wiring are formed. Is formed. A driving thin film transistor DrT, which is a current source element, is formed between the storage capacitor CST and the power supply wiring, and an organic light emitting diode connected to the driving thin film transistor DrT. , E).

In this case, when the organic light emitting diode (E) supplies current to the organic light emitting material in a forward direction, P (positive) -N (negative) between an anode electrode, which is a hole providing layer, and a cathode electrode, which is an electron providing layer, is applied. Since the electrons and holes are recombined with each other through the junction, the electrons and holes have less energy than when the electrons and holes are separated from each other.

Such an organic light emitting diode has a structure in which an array device and an organic light emitting diode are stacked on the same substrate, and the organic light emitting diode is formed by bonding an array element and a substrate on which the organic light emitting diode is formed and a separate encapsulation substrate. In this case, since the product of the yield of the array device and the yield of the organic light emitting diode determines the yield of the organic light emitting device, the overall process yield is greatly limited by the organic light emitting diode process, which is a late process. There is this.

Therefore, in order to solve this problem, a dual panel type organic light emitting diode has been proposed, in which an array element and an organic light emitting diode are formed on different substrates, and the two substrates are electrically bonded to each other.

2 is a cross-sectional view of a dual panel type organic light emitting diode having a conventional array device and an organic light emitting diode disposed on different substrates.

In the organic light emitting device, the first and second substrates are disposed to face each other, and are divided into an active area which is an area for displaying an image and a non-display area outside thereof.

Specifically, as shown in FIG. 2, gate lines (not shown) arranged in a line, data lines (not shown) and power supply lines (not shown) intersecting the gate lines and spaced apart from each other at a predetermined interval are illustrated in the active region. And a switching thin film transistor (not shown) provided at the intersection of the gate wiring and the data wiring, and a driving thin film transistor Tp provided at the intersection of the gate wiring and the power supply line. The drain electrode of the transistor is connected to the gate electrode 12a of the driving thin film transistor, the source electrode 15a of the driving thin film transistor TD is connected to the power supply line through a contact hole, and the drain of the driving thin film transistor. The electrode 15b is formed integrally with the pixel electrode 41.

One sub-pixel is defined by the gate wiring, the data wiring, and the power supply line, and a switching thin film transistor and a driving thin film transistor are provided in the sub-pixel.

The pad portion region includes a gate pad 22 extending from the gate wiring 12 and a data pad 25 extending from the data wiring 15. First and second antioxidant films 51 and 52 are respectively formed to cover them.

In this case, a VDD pad 35 is further provided between the active region and the pad portion region. A contact electrode 24 is formed on the VDD pad to connect the first electrode of the second substrate with the VDD pad.

Here, the pixel electrode 41 of the active region, the first and second antioxidant films 52 and 55 of the pad portion region, and the transparent electrode 75 formed between the active region and the pad portion region are transparent conductive materials such as ITO. Form into material.

Although not shown, a first electrode, which is a transparent hole injection electrode, a separator positioned at a subpixel boundary part, an organic light emitting layer formed on the first electrode in the region within the partition, A second electrode which is an electron injection electrode formed on the organic light emitting layer is provided.

The organic light emitting layer 22 expresses the colors of red (R), green (G), and blue (B). In a general method, a separate organic material emitting red, green, and blue light is patterned for each pixel. Use it. The organic light emitting layer may be configured as a single layer or a multilayer. When the organic light emitting layer is configured as a multilayer, the organic light emitting layer may further include a hole transport layer in proximity to the first electrode, and further include an electron transport layer in proximity to the second electrode.

When an electric field is applied to the first electrode and the second electrode of the device, electrons are injected into the organic light emitting layer from the second electrode, and holes are injected into the organic light emitting layer from the first electrode.

The electrons and holes injected into the organic light emitting layer move to the organic light emitting layer under an electric field and combine with each other to form an exciton, and the electrons in the exciton excited state transition to the ground state to emit light in the visible region.

At this time, the pattern of the first substrate and the pattern of the second substrate are contacted with each other to form a flow of current from the second substrate to the first substrate. In order to connect the two patterns, the pixel electrode 41 and the transparent electrode ( The contact electrode 24 is separately formed on the 75) using a metal material having a lower resistance such as Mo than the transparent conductive material.

However, the organic electroluminescent device according to the prior art as described above has the following problems.

That is, a contact electrode is formed on the first substrate so as to conduct a pattern between the first substrate and the second substrate. The contact electrode may be simultaneously formed with the pixel electrode by a photolithography process using a diffraction exposure method.

Specifically, as shown in FIG. 3, a transparent conductive material such as ITO is deposited on the entire surface of the substrate on which the protective layer 16 is formed and patterned by a photolithography process to form the pixel electrode 41, the transparent electrode 75, and the pad part. The first and second antioxidant films 52 and 55 in the region are patterned. Subsequently, a metal material such as Mo is deposited on the entire surface including the patterns, a photoresist pattern 59 is formed on the photolithography process, and the metal material is etched using the photoresist pattern as a mask. 41 and the contact electrode 24 are formed on the transparent electrode 75 in the same pattern.

However, in the wet etching of the metal material for forming the contact electrode, the portion where the photoresist pattern is not formed is etched away from the metal, and the first and second antioxidant films formed of the transparent conductive material by the etchant are removed. There was a problem that the membrane is thinned or lost due to damage.

In addition, the portion where the photoresist pattern is formed also has a problem that the etchant penetrates through the side surface and damages the pixel electrode and the power wiring.

The present invention has been made to solve the above problems, in order to prevent the ITO from being damaged by the contact electrode etchant during contact electrode patterning, first forming the contact electrode and patterning the ITO by the lift-off method An object of the present invention is to provide an organic electroluminescent device and a method of manufacturing the same.

An organic electroluminescent device according to the present invention for achieving the above object is formed in the active region of the first substrate, respectively, the gate wiring, data wiring and power supply line defining a sub-pixel and formed inside the sub-pixel, respectively. A switching thin film transistor and a driving thin film transistor, a first contact electrode connected to the driving thin film transistor, a gate pad and a data pad extending from the gate wiring and the data wiring, respectively, and formed in a pad region, and an upper portion of the gate pad. A second contact electrode and a first antioxidant layer stacked on the data pad and sequentially contacted with the gate pad, a third contact electrode and a second antioxidant film stacked on the data pad and sequentially contacted with the data pad, and the first substrate. A first electrode, an organic light emitting layer, and a first layer that are sequentially stacked on a second substrate that is Characterized in that it comprises a two-electrode.

In addition, according to another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, by forming a data line and a power supply line insulated from the gate line by a gate line and a gate insulating layer in an active region of the first substrate. Defining a pixel, forming a gate pad extending from the gate wiring and a data pad extending from the data wiring in a pad region of the first substrate, a switching thin film transistor inside the sub-pixel; Forming a driving thin film transistor, forming a protective film on the entire surface including the driving thin film transistor, depositing and patterning a metal material on the protective film to contact the driving thin film transistor, the gate pad, and the data pad, respectively. Forming a first, second, and third contact electrode; Forming a photoresist pattern to expose the second and third contact electrodes, depositing a transparent conductive material on the entire surface including the photoresist pattern, and lifting the photoresist pattern to lift off the second and third contacts. And forming a first and a second antioxidant film covering the electrode.

That is, the contact portions connecting the upper and lower plates in the AMOLED DOD are all made of a metal material. In general, the lower substrate uses Mo and the upper substrate uses Al, and a contact spacer serves as a connection in the middle. In this case, an oxide film is formed of ITO to prevent corrosion on the part where the circuit is attached.In this case, when the wet etching process for Mo patterning is performed, the lower layer of ITO is damaged and the thickness of ITO becomes thin or, in severe cases, an antioxidant film It may cause its own loss.

Conversely, if Mo is formed first and ITO is formed later, damage to Mo in the active region may adversely affect the panel characteristics.

Accordingly, the present invention is intended to form an intact ITO antioxidant film by applying a process structure that does not affect the formation of the contact electrode and the ITO antioxidant film so that Mo is formed in the active region and the ITO antioxidant film remains normally. It is done.

Hereinafter, an organic electroluminescent device and a method of manufacturing the same according to the present invention will be described with reference to the accompanying drawings.

3 is a cross-sectional view of an organic electroluminescent device for explaining problems of the prior art, FIG. 4 is a cross-sectional view of an organic electroluminescent device according to the present invention, and FIGS. 5a to 5e illustrate a process of an organic electroluminescent device according to the present invention. It is a cross section.

The organic electroluminescent device according to the present invention includes a thin film transistor array unit including a switching thin film transistor (not shown) and a driving thin film transistor (Tp), and an organic electroluminescent light formed by sequentially stacking a first electrode, an organic light emitting layer, and a second electrode. In addition, the dual plate structure is formed on the first and second substrates, respectively, the contact electrode 141 is used to conduct the pattern of the first and second substrates.

The organic electroluminescent device is divided into an active area which is an area for displaying an image and a non-display area that is outside of the area, wherein the gate lines are arranged in a row on the first substrate of the active area, and are vertically intersected with the gate lines at regular intervals. The sub-pixel is defined by a data line and a power supply line spaced apart from each other. A switching thin film transistor is disposed at an intersection point of the gate line and a data line, and a driving thin film transistor Tp is disposed at an intersection point of the gate line and the power supply line. Is placed.

As shown in FIG. 4, the driving thin film transistor includes a gate electrode 112a, an active layer 114, a source electrode 115a, and a drain electrode 115b, and the switching thin film transistor has the same component. .

Here, when the active layer 114 is amorphous silicon, the driving thin film transistor is a bottom-gate type thin film transistor having a gate electrode disposed below, and the source electrode 115a and the drain electrode 115b are formed of the active layer. It overlaps at both ends, and the active layer between the source region and the drain region becomes a channel layer. This configuration is the same in the case of a switching thin film transistor.

The switching thin film transistor includes a gate electrode branched from the gate line and a source / drain electrode branched from the data line, and the driving thin film transistor is provided on the same layer as the gate line and drains of the switching thin film transistor. The components include a gate electrode 112a connected to an electrode, a source electrode 115a connected to the power supply line, and a drain electrode 115b connected to the first contact electrode 141. The first contact electrode 141 connected to the driving thin film transistor is in contact with the second electrode of the second substrate.

The pad portion region includes a gate pad 122 extending from the gate line to transmit a scan signal from the outside, and a data pad 125 extending from the data line to transfer a video signal. First and second antioxidant layers 151 and 152 are formed on the pad and the data pad, respectively, and a third contact electrode 143 is further provided between the gate pad and the first antioxidant layer. A fourth contact electrode 144 is further provided between the pad and the second antioxidant layer.

The first antioxidant layer 151 is formed by depositing a portion of the protective layer 116 and the gate insulating layer 113 that are selectively removed from the upper layer of the gate pad, and the second antioxidant layer 152 is formed on the data pad. The upper protective layer 116 is formed by depositing on a portion selectively removed.

A seal pattern is formed between the active region and the pad portion region so that the first substrate and the second substrate are opposed to each other.

In this case, a VDD pad is further provided between the active region and the region in which the seal pattern is formed. The VDD pad 135 receives a current from an external driving circuit and transfers the current to the first electrode of the second substrate. A second contact electrode 142 is contacted through the passivation layer 116 on an upper portion of the VDD pad, and a dummy pattern 132 is further provided on the lower portion of the VDD pad to prevent a step difference from the active region.

In the above description, the gate wiring, the gate electrode 112a, the gate pad 122, and the dummy pattern 132 are provided on the same layer, and the gate insulating layer 113 is formed to cover the patterns. However, the gate insulating film of the portion where the gate pad is formed is removed.

And a data line 115 defining a subpixel crossing the gate line, a source electrode 115a branched from the data line, and a drain spaced apart from the source electrode and disposed on the same layer as the data line. An electrode 115b, a data pad 125 formed at an end of the data line, and a VDD pad 135 are provided on the same layer.

In addition, the first contact electrode 141 is connected to the drain electrode 115b of the driving thin film transistor in the active region, and the third and fourth contact electrodes 142 are formed on the gate pad and the data pad in the pad region, respectively. 143 and a second contact electrode 142 connected to the VDD pad 135 between the active region and the pad portion region are provided on the same layer. The first to fourth contact electrodes 141, 142, 143, and 144 are formed of a metal material having low resistance such as Mo.

The first and second antioxidant layers 152 and 155 formed on the third and fourth contact electrodes are formed of a transparent conductive material such as ITO to prevent corrosion of the gate pad and the data pad.

Although not shown, a first electrode, which is a transparent hole injection layer, is formed on the second substrate, and an organic light emitting layer is formed on each sub-pixel independently, and a second electrode, which is an electron injection layer, is stacked thereon. The first electrode is electrically connected to the VDD wiring 135 via the second contact electrode, and the second electrode is electrically connected to the driving thin film transistor through the first contact electrode.

In this case, the organic light emitting layer includes a hole transporting layer adjacent to the first electrode, a main light emitting layer emitting specific light for each sub-pixel, and an electron transporting layer adjacent to the second electrode, and red and green colors for each sub-pixel. By forming a separate organic material emitting blue, the color of red (R), green (G), and blue (B) is expressed.

Hereinafter, a method of manufacturing an organic electroluminescent device will be described with reference to FIGS. 5A to 5E.

First, as illustrated in FIG. 5A, copper (Cu), copper alloy (Cu Alloy), aluminum (Al), and aluminum alloy (AlNd: Aluminum) on the substrate 111 are transparent and have excellent heat resistance on the substrate 111. After depositing metal materials such as Neodymium, Molybdenum (Mo), Molybdenum Alloy, Chromium (Cr), Chromium Alloy, Titanium (Ti), Titanium Alloy, Silver (Ag), Silver Alloy in order by sputtering method, Patterning is performed in a photolithography process using an exposure mask, and the gate wiring (not shown) in the active region, the gate electrode 112a of the driving thin film transistor, the gate pad 122 in the pad region, the active region and the pad portion A dummy pattern 132 is formed between the regions. The dummy pattern is for preventing step unevenness with the active region.

Thereafter, an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx) is deposited on the entire surface including the gate electrode 112a at a high temperature to form a gate insulating layer 113.

Subsequently, amorphous silicon (a-Si) is deposited on the gate insulating layer 113 and patterned to form an active layer 114.

Next, n + a-Si doped with impurities in amorphous silicon (a-Si) is deposited on the entire surface including the active layer 114, and copper (Cu), copper alloy (Cu Alloy), and aluminum are deposited thereon. Deposition of metal materials such as (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), molybdenum alloy, chromium (Cr), chromium alloy, titanium (Ti), titanium alloy, silver (Ag), silver alloy After etching, the data line and the power supply line vertically intersecting the gate wiring, the ohmic contact layer 114a and the source / drain electrodes 115a and 115b are formed in the active region, and the data is formed in the pad region. A pad 125 is formed, and a VDD pad 135 is formed between the active region and the pad portion region.

In this case, the ohmic contact layer serves to complement the contact characteristics between the semiconductor layer and the source / drain electrodes. The driving thin film transistor and the switching thin film transistor are formed by the same process.

Thereafter, as illustrated in FIG. 5B, an inorganic insulating material such as silicon nitride or silicon oxide is deposited on the entire surface including the source / drain electrodes 115a and 115b or BCB (Benzocyclobutene), an acrylic resin, or the like. Of an organic insulating material is applied to form a protective film 118.

Subsequently, the protective layer on the drain electrode 115b is removed to form the first contact hole 118, the protective layer on the VDD pad 135 is removed to form the second contact hole 119, and the gate pad. The third contact hole 162 is formed by removing the stacked layer of the gate insulating film and the protective film on the 122, and the fourth contact hole 165 is formed by removing the protective film on the data pad 125.

Subsequently, as illustrated in FIG. 5C, a first contact electrode contacting the drain electrode through the first contact hole 118 by depositing a metal material such as Mo on the passivation layer 116 and patterning the photolithography process. 141, a second contact electrode 142 contacting the VDD pad through the second contact hole 119, and a third contact electrode 143 contacting the gate pad through the third contact hole 162. A fourth contact electrode 144 is formed to contact the data pad through the fourth contact hole 165.

Subsequently, as illustrated in FIG. 5D, photoresist is deposited on the entire surface including the first to fourth contact electrodes 141, 142, 143, and 144, and then the third and fourth contact electrodes are deposited. The photoresist pattern 159 is formed by exposing and developing to expose the (143, 144).

Subsequently, a transparent conductive material 117a, such as indium tin oxide (ITO), indium zinc oxide (IZO), AZO, or ZnO, is deposited on the entire surface including the photoresist pattern 159 to a predetermined thickness. After penetrating the stripper to the bottom, the photoresist pattern is lifted off to pattern the transparent conductive material.

As a result, as shown in FIG. 5E, the third and fourth contact electrodes 143 and 144 are covered by the first and second anti-oxidation layers 152 and 155 so that not only the contact electrode but also the gate pad and the data pad are formed. Prevents corrosion

As described above, the present invention forms a contact electrode first by patterning a metal material, and then forms a first and a second antioxidant film by applying a lift-off method, thereby preventing the antioxidant film from being damaged by the metal etchant when forming the contact electrode. Can be prevented.

Although not shown, on the second substrate opposed to the first substrate, a first electrode, which is a transparent hole injection layer, an organic light emitting layer independently configured for each sub-pixel, and a second electrode, which is an electron injection layer, are sequentially formed. The organic light emitting layer includes a hole injection layer and a hole transporting layer adjacent to the first electrode, a main light emitting layer emitting a specific light for each sub-pixel, an electron injection layer and an electron transporting layer adjacent to the second electrode, The color of red (R), green (G), and blue (B) is represented by patterning separate organic materials emitting red, green, and blue for each sub-pixel.

Here, the first electrode is connected to the VDD pad through the second contact electrode of the first substrate to receive a constant current from the outside, and the second electrode is a drain electrode of the driving thin film transistor through the first contact electrode of the first substrate. It is connected to and receives a constant current.

 On the other hand, the present invention described above is not limited to the above-described embodiment and the accompanying drawings, it is possible that various substitutions, modifications and changes within the scope without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

The organic electroluminescent device of the present invention as described above and a method of manufacturing the same have the following effects.

That is, by forming a contact electrode first using a metal material and then patterning the ITO by a lift-off method to form an antioxidant film, it is possible to prevent the ITO from being damaged by the contact electrode etchant during patterning of the contact electrode. .

Claims (17)

Gate wiring, data wiring and power supply lines formed in the active region of the first substrate and defining the sub-pixels; A switching thin film transistor and a driving thin film transistor respectively formed in the sub-pixels; A first contact electrode connected to the driving thin film transistor; A gate pad and a data pad extending from the gate wiring and the data wiring, respectively, and formed in a pad portion region; A second contact electrode and a first antioxidant layer stacked on the gate pad and sequentially contacted with the gate pad; A third contact electrode and a second antioxidant layer which are sequentially stacked on the data pad and contact the data pad; An organic electroluminescent device comprising: a first electrode, an organic light emitting layer, and a second electrode that are sequentially stacked on a second substrate opposed to the first substrate. The method of claim 1, And an additional VDD pad between the active region and the pad portion region, and a second contact electrode contacting the VDD pad. The method of claim 2, The VDD pad is provided on the same layer as the data line. The method of claim 2, And the first contact electrode is electrically connected to the second electrode, and the second contact electrode is electrically connected to the first electrode. The method of claim 2, And the first, second, third and fourth contact electrodes are formed on the same layer. The method of claim 2, The first, second, third and fourth contact electrode is an organic electroluminescent device, characterized in that the metal material. The method of claim 1, The first and second antioxidant film is an organic electroluminescent device, characterized in that the transparent conductive material. The method of claim 1, The first and second anti-oxidation films are indium tin oxide (ITO), indium zinc oxide (IZO), AZO, and ZnO. Defining a sub-pixel by forming a data line and a power supply line insulated from the gate line by a gate line and a gate insulating film in an active region of the first substrate; Forming a gate pad extending from the gate wiring and a data pad extending from the data wiring in a pad region of the first substrate; Forming a switching thin film transistor and a driving thin film transistor inside the sub-pixel; Forming a protective film on the entire surface including the driving thin film transistor; Depositing and patterning a metal material on the passivation layer to form first, second, and third contact electrodes contacting the driving thin film transistor, the gate pad, and the data pad, respectively; Forming a photoresist pattern to expose the second and third contact electrodes; And depositing a transparent conductive material on the entire surface including the photoresist pattern and lifting off the photoresist pattern to form first and second antioxidant films covering the second and third contact electrodes. A method of manufacturing an organic electroluminescent device, characterized in that. The method of claim 9, And a VDD pad is further formed between the active region and the pad portion region. The method of claim 10, And the VDD pads are formed at the same time in forming the data line. The method of claim 10, In the step of forming the first, second, third contact electrode, the method of manufacturing an organic electroluminescent device, characterized in that further forming a fourth contact electrode in contact with the VDD pad. The method of claim 9, And the first contact electrode is in contact with the driving thin film transistor through a contact hole formed by removing a passivation layer on the drain electrode of the driving thin film transistor. The method of claim 9, The second contact electrode is contacted to the gate pad through a contact hole formed by removing a gate insulating film and a protective film on the gate pad, And the third contact electrode is in contact with the data pad through a contact hole formed by removing a protective layer on the data pad. The method of claim 9, The metal material is Mo (molybdenum) manufacturing method of an organic electroluminescent device, characterized in that. The method of claim 9, The transparent conductive material is ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), AZO, ZnO, characterized in that the manufacturing method of the organic electroluminescent device. The method of claim 10, On the second substrate opposite to the first substrate, Forming a first electrode connected to the second contact electrode; Forming an organic light emitting layer on the first electrode; And forming a second electrode connected to the first contact electrode on the organic light emitting layer.

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