KR20110004170A - Organic light emitting device - Google Patents

Abstract

PURPOSE: An organic electroluminescent element and a method for manufacturing the same are provided to reduce the driving voltage of the element by forming an auxiliary electrode to be in connection with a second electrode in order to reduce the resistance of the second electrode. CONSTITUTION: A thin film transistor(T) comprises a gate electrode(115), a semiconductor layer(125), a source electrode(130a), and a drain electrode(130b). A planarized film(150) is located on the surface the thin film transistor. A first electrode(160) is located on the planarized film. An organic film(180) is located on the first electrode. A second electrode(185) is located on the organic film. A first auxiliary electrode(140) is located between the substrate and the first electrode.

Description

Organic light emitting device and its manufacturing method {Organic Light Emitting Device}

The present invention relates to an organic light emitting display device and a method for manufacturing the same, and to an organic light emitting display device and a method for manufacturing the same, which can lower the resistance of a second electrode by forming an auxiliary electrode.

Recently, various flat panel display devices that can reduce weight and volume, which are disadvantages of cathode ray tubes (CRTs), have been developed. Examples of such flat panel displays include liquid crystal displays (LCDs), field emission displays (FEDs), plasma displays (PDPs) and organic light emitting diodes (OLEDs). Organic Light Emitting Device).

Among them, an organic light emitting device is a self-luminous display device that electrically excites an organic compound to emit light. The organic light emitting diode does not require a backlight used in the LCD, so it is not only lightweight but also simplifies the process. In addition, low temperature production is possible, response speed is 1ms or less, high speed response speed, low power consumption, wide viewing angle, and high contrast (Contrast) characteristics.

The organic light emitting device includes a light emitting layer made of an organic material between the first electrode as the anode and the second electrode as the cathode, so that holes supplied from the first electrode and electrons received from the second electrode are combined in the light emitting layer to form a hole-electron pair. Excitons are formed and are then emitted by the energy generated by the excitons returning to the ground state.

The organic light emitting display device can be classified into a bottom emission type and a front emission type according to the direction in which light is emitted. In the bottom emission type, light is emitted from the lower direction of the substrate, that is, the light emitting layer toward the first electrode, and the top emission type is light emitted from the upper direction of the substrate, that is, the light emitting layer toward the second electrode.

However, the top emission type organic light emitting diode has a very thin second electrode made of a metal so that light can be transmitted from the second electrode, which causes a high resistance of the second electrode.

The present invention provides an organic light emitting display device and a method of manufacturing the same, which can be easily applied to reduce the driving voltage and increase the size of the device by forming an auxiliary electrode to lower the resistance of the second electrode.

An organic light emitting display device according to an embodiment of the present invention is a substrate, a thin film transistor positioned on the substrate, including a gate electrode, a semiconductor layer, a source electrode and a drain electrode, a planarization film positioned on the thin film transistor, A first electrode connected to the thin film transistor, an organic layer positioned on the first electrode, a second electrode positioned on the organic layer, and between the substrate and the first electrode; The first auxiliary electrode may be connected to the second electrode.

The display device may further include a contact spacer and a second auxiliary electrode between the first auxiliary electrode and the second electrode.

The second auxiliary electrode may be positioned on the same plane as the first electrode, and the contact spacer may be located between the second auxiliary electrode and the first auxiliary electrode.

The contact spacer may be formed of an organic material, a metal, a conductive ball, or a multilayer film thereof.

The first auxiliary electrode may be positioned on the thin film transistor.

The first auxiliary electrode may be located on the front surface of the substrate except for a via hole connected to the first electrode and the thin film transistor.

The first auxiliary electrode may be made of the same material as the gate electrode.

The first auxiliary electrode may be positioned between the thin film transistor and the first electrode.

The first auxiliary electrode may be made of the same material as the source electrode and the drain electrode.

The second electrode may be connected to the first auxiliary electrode through a via hole exposing a portion of the first auxiliary electrode.

In addition, the method of manufacturing an organic light emitting display device according to an embodiment of the present invention comprises the steps of forming a thin film transistor including a gate electrode, a semiconductor layer, a source electrode and a drain electrode on a substrate, a first auxiliary on the thin film transistor Forming an electrode, forming a planarization film including a plurality of via holes on the first auxiliary electrode, forming a first electrode connected to the thin film transistor on the planarization film, on the first electrode The method may include forming an organic layer and forming a second electrode connected to the first auxiliary electrode on the organic layer.

The method may further include forming a contact spacer and a second auxiliary electrode in the via hole.

An organic light emitting display device and a method of manufacturing the same according to an embodiment of the present invention have an advantage of forming an auxiliary electrode connected to a second electrode, thereby lowering the resistance of the second electrode and thereby lowering a driving voltage.

In addition, there is an advantage in that the luminance unevenness may also be prevented by solving the nonuniform resistance for each region of the second thin electrode through the auxiliary electrode.

Therefore, the organic light emitting display device and its manufacturing method according to the embodiments of the present invention can provide an organic light emitting display device and a method of manufacturing the same is easy to apply to the counter.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention, and FIG. 2 is a plan view of FIG.

Referring to FIG. 1, an organic light emitting display device 100 according to a first embodiment of the present invention is positioned on a substrate 110, the substrate 110, a gate electrode 115, a semiconductor layer 125, A thin film transistor T including a source electrode 130a and a drain electrode 130b, a planarization film 150 positioned on the thin film transistor T, and a planarization film 150 positioned on the planarization film 150. A first electrode 160 connected to (T), an organic layer 180 disposed on the first electrode 160 and including at least an emission layer, and a second electrode positioned on the organic layer 180 185 and a first auxiliary electrode 140 positioned between the substrate 110 and the first electrode 160 and connected to the second electrode 185.

The thin film transistor T is positioned on the substrate 110. In more detail, the gate electrode 115 is positioned on the substrate 110, and the gate insulating layer 120 that insulates the gate electrode 115 is positioned on the gate electrode 115.

The semiconductor layer 125 is positioned on a region of the gate insulating layer 120 that corresponds to the gate electrode 115, and the source electrode 130a and the drain electrode 130b electrically connected to the semiconductor layer 125 are formed of the semiconductor layer ( The thin film transistor T is disposed at both sides of the 125.

The passivation film 135 that protects the thin film transistor T is disposed on the thin film transistor T. In addition, a planarization film 150 is formed on the passivation film 135 to planarize the step by the thin film transistor T.

The first electrode 160 is positioned on the planarization layer 150. The first electrode 160 has a patterned structure for each pixel, and the first electrode 160 is a thin film transistor T through the first via hole 151 formed in the passivation layer 135 and the planarization layer 150. Is connected to any one of the source electrode 130a and the drain electrode 130b.

The first auxiliary electrode 140 is positioned between the first electrode 160 and the substrate 110. The first auxiliary electrode 140 may be positioned on the entire surface of the substrate 110 except for the first via hole 151.

In addition, the second auxiliary electrode 165 is positioned on the same plane as the first electrode 160 to be spaced apart from the first electrode 160. The planarization layer 150 includes a second via hole 152 that exposes the first auxiliary electrode 140, and a contact spacer 155 is positioned in the second via hole 152 so that the first auxiliary electrode 140 is positioned. And the second auxiliary electrode 165 are connected.

The bank layer 170 defining the pixel is positioned on the first electrode 160. The bank layer 170 includes a first opening 171 exposing a portion of the first electrode 160 and a second opening 172 exposing the second auxiliary electrode 165.

The organic layer 180 is positioned on the first electrode 160 exposed by the first opening 171, and the second electrode 185 is positioned on the entire surface of the substrate 110 including the organic layer 180. The second electrode 185 is connected to the second auxiliary electrode 165 through the second opening 172 and to the first auxiliary electrode 140 through the contact spacer 155 connected to the second auxiliary electrode 165. Connected.

Therefore, as shown in FIG. 2, except for the first via hole 151, the first auxiliary electrode 140 is positioned on the entire surface of the substrate 110 including the cells including the light emitting regions A. The first auxiliary electrode 140 and the second electrode 185 are connected to serve to lower the resistance.

Therefore, by forming the first auxiliary electrode having a large area in the second electrode having a high resistance, it is possible to provide an organic light emitting device that is easy to increase in size by lowering the resistance of the second electrode and lowering the driving voltage of the device.

Hereinafter, a method of manufacturing the organic light emitting display device according to the first embodiment of the present invention will be described.

3A to 3B are views illustrating a method of manufacturing an organic light emitting display device according to a first embodiment of the present invention, by process.

First, referring to FIG. 3A, a substrate 210 made of glass, plastic, or a conductive material is prepared, and a first conductive layer is stacked on the substrate 210. The first conductive layer may be formed of one selected from the group consisting of aluminum (Al), aluminum alloy (Al alloy), molybdenum (Mo), molybdenum alloy (Mo alloy), tungsten (W), and tungsten silicide (WSi ₂ ). desirable. Then, the first conductive layer is patterned to form the gate electrode 215.

Subsequently, a gate insulating layer 220 is stacked on the substrate 210. The gate insulating film 220 may be formed of a silicon oxide film, a silicon nitride film, or a double layer thereof.

Next, an amorphous silicon layer or an amorphous silicon layer is laminated on the gate insulating layer 220 to form a polycrystalline silicon layer obtained by crystallizing it. Next, the semiconductor layer 225 is formed by patterning the semiconductor layer 225 so that the gate electrode 215 corresponds to a predetermined region. Although not shown, an ohmic contact layer may be disposed on the semiconductor layer 225.

Subsequently, a second conductive layer is laminated on the substrate 210 including the semiconductor layer 225. Here, the second conductive layer is formed of a low resistance material in order to lower the wiring resistance, and is formed of a multilayer film made of molybdenum tungsten (MoW), titanium (Ti), aluminum (Al), or aluminum alloy (Al alloy). As the multilayer, a laminated structure of molybdenum tungsten / aluminum molybdenum tungsten (MoW / Al / MoW) may be used. Next, the second conductive layer is patterned to form a source electrode 230a and a drain electrode 230b in a predetermined region of the semiconductor layer 225.

Subsequently, a passivation film 235 is stacked on the substrate 210 including the source electrode 230a and the drain electrode 230b. The passivation film 235 may be formed of a silicon oxide film, a silicon nitride film, or a double layer thereof.

Next, a third conductive layer is laminated on the passivation film 235. The third conductive layer may be formed of a low resistance material to lower the resistance, and may be formed of molybdenum (Mo), titanium (Ti), aluminum (Al), silver (Ag), or an alloy thereof, and a single layer thereof. Or it may be made of multiple layers.

Subsequently, the third conductive layer is patterned and removed to form a first via hole, thereby forming a first auxiliary electrode 240. In this case, the thickness of the first auxiliary electrode 240 may be 200 μm to 3 μm.

Next, referring to FIG. 3B, the planarization film 250 is formed on the substrate 210 including the first auxiliary electrode 240. The planarization layer 250 may be formed of an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

Then, the passivation film 235 and the planarization film 250 are etched to form a first via hole 251 exposing any one of the source electrode 230a or the drain electrode 230b of the thin film transistor T. At the same time, the planarization layer 250 is etched to form a second via hole 252 exposing the first auxiliary electrode 240.

Subsequently, at least one of a conductive organic material, a metal, and a conductive ball is formed in the second via hole 252 to form a contact spacer 255. The contact spacer 255 serves to connect the second auxiliary electrode and the first auxiliary electrode later, and is not limited to any conductive material. Accordingly, the contact spacer 255 may be formed in the second via hole 252 to be filled in a tight shape.

Subsequently, a fourth conductive layer is stacked on the planarization film 250, the first via hole 251, and the contact spacer 255. The fourth conductive layer may be formed of a material having a high work function such as indium tin oxide (ITO), indium zinc oxide (IZO), indium cerium oxide (ICO), or zinc oxide (ZnO). The fourth conductive layer is patterned to form the first electrode 260, and at the same time, the second auxiliary electrode 265 is formed on the contact spacer 255. The second auxiliary electrode 265 connects the second electrode to be formed later and the contact spacer 255.

In this case, the first electrode 260 fills the first via hole 251 and is electrically connected to either the source electrode 230a or the drain electrode 230b.

Subsequently, referring to FIG. 3C, a bank layer 270 is formed on the first electrode 260. The bank layer 270 may be coated with SOG (spin on glass), which is then coated with an organic material or silicon oxide such as polyimide, benzocyclobutene series resin, acrylate, and the like in a liquid form. It may be formed of the same inorganic material.

Next, the bank layer 270 is etched to form a first opening 271 exposing a part of the first electrode 260 and a second opening 272 exposing the second auxiliary electrode 265.

Subsequently, the organic layer 280 including the emission layer is formed on the first opening 271 using a fine metal mask (FMM). In this case, the organic layer 280 is not formed in the second opening 272. Alternatively, the organic layer 280 may be deposited on the entire surface of the substrate 210 and then patterned with a laser.

Next, the second electrode 285 is formed by stacking a fifth conductive layer on the substrate 210 on which the organic layer 280 is formed. The second electrode 285 may be formed of magnesium (Mg), silver (Ag), aluminum (Al), calcium (Ca), or an alloy thereof having low wiring resistance and work function. For the top emission, the second electrode 285 may be formed so thin that it can transmit light.

In this case, the second electrode 285 is connected to the second auxiliary electrode 265 at the second opening 272. Accordingly, the second electrode 285 may be connected to the first auxiliary electrode 265 through the contact spacer 255 connected to the second auxiliary electrode 265.

As described above, the organic light emitting display device according to the first embodiment of the present invention can be manufactured.

The organic light emitting display device according to the first embodiment of the present invention has the advantage of connecting the second electrode having a very thin thickness and the first auxiliary electrode, thereby lowering the driving voltage by lowering the resistance of the second electrode.

Therefore, there is an advantage in that it is possible to provide an organic light emitting device that is easy to apply to large size.

4 is a cross-sectional view illustrating an organic light emitting display device according to a second embodiment of the present invention, and FIG. 5 is a plan view of FIG. 4.

Referring to FIG. 4, the thin film transistor T is positioned on the substrate 310. In more detail, the gate electrode 315 is positioned on the substrate 310, and the first auxiliary electrode 318 spaced apart from the gate electrode 315 is positioned.

A gate insulating layer 320 that insulates the gate electrode 315 and the first auxiliary electrode 318 is disposed on the gate electrode 315 and the first auxiliary electrode 318.

The semiconductor layer 325 is positioned on a region of the gate insulating layer 320 corresponding to the gate electrode 315, and the source electrode 330a and the drain electrode 330b electrically connected to the semiconductor layer 325 are formed of the semiconductor layer ( The thin film transistor T is disposed at both sides of the 325.

The passivation film 340 is disposed on the thin film transistor T to protect the thin film transistor T. In addition, a planarization film 350 is formed on the passivation film 340 to planarize the step by the thin film transistor T.

The first electrode 360 is positioned on the planarization film 350. The first electrode 360 has a patterned structure for each pixel, and the first electrode 360 is a thin film transistor T through the first via hole 351 formed in the passivation film 340 and the planarization film 350. It is connected to any one of the source electrode 330a and the drain electrode 330b.

The second via hole 352 exposing the first auxiliary electrode 318 is disposed in the gate insulating layer 320, the passivation layer 340, and the planarization layer 350.

The organic layer 370 is positioned on the first electrode 360, and the second electrode 380 is positioned on the entire surface of the substrate 310 including the organic layer 370. The second electrode 380 is connected to the first auxiliary electrode 318 through the second via hole 352.

Accordingly, as shown in FIG. 5, the gate line 316 connected to the gate electrode 315 and the gate electrode 315 on the entire surface of the substrate 310 including the cells including the light emitting regions A. Referring to FIG. The first auxiliary electrode 318 may be located in an area except for the above.

Therefore, by forming the first auxiliary electrode having a large area in the second electrode having a high resistance, it is possible to provide an organic light emitting device that is easy to increase in size by lowering the resistance of the second electrode and lowering the driving voltage of the device.

In the organic light emitting display device according to the second embodiment of the present invention, the bank layer does not appear according to the cross-sectional view, but the bank layer is formed so as to expose a part of the first electrode 360 as in the first embodiment. Make it clear.

Hereinafter, a method of manufacturing the organic light emitting display device according to the second embodiment of the present invention will be described.

6A through 6B are views illustrating a method of manufacturing an organic light emitting display device, according to a second embodiment of the present invention.

First, referring to FIG. 6A, a substrate 410 made of glass, plastic, or a conductive material is prepared, and a first conductive layer is stacked on the substrate 410. The first conductive layer is formed of one selected from the group consisting of aluminum (Al), aluminum alloy (Al alloy), molybdenum (Mo), molybdenum alloy (Mo alloy), tungsten (W), and tungsten silicide (WSi ₂ ). It is preferable. Then, the first conductive layer is patterned to form the gate electrode 415 and the first auxiliary electrode 418. In this case, the thickness of the first auxiliary electrode 418 may be 200 μm to 3 μm.

Subsequently, a gate insulating film 420 is stacked on the substrate 410. The gate insulating film 420 may be formed of a silicon oxide film, a silicon nitride film, or a double layer thereof.

Next, an amorphous silicon layer or an amorphous silicon layer is laminated on the gate insulating layer 420, and a polycrystalline silicon layer obtained by crystallizing the same is formed. Next, the semiconductor layer 425 is formed to pattern the gate electrode 415 and a predetermined region by patterning it. Although not shown, an ohmic contact layer may be disposed on the semiconductor layer 425.

Subsequently, a second conductive layer is laminated on the substrate 410 including the semiconductor layer 425. Here, the second conductive layer is formed of a low resistance material in order to lower the wiring resistance, and is formed of a multilayer film made of molybdenum tungsten (MoW), titanium (Ti), aluminum (Al), or aluminum alloy (Al alloy). As the multilayer, a laminated structure of molybdenum tungsten / aluminum molybdenum tungsten (MoW / Al / MoW) may be used. Next, the second conductive layer is patterned to form a source electrode 430a and a drain electrode 430b in a predetermined region of the semiconductor layer 425.

Subsequently, a passivation film 440 is stacked on the substrate 410 including the source electrode 430a and the drain electrode 430b. The passivation film 440 may be formed of a silicon oxide film, a silicon nitride film, or a double layer thereof.

Next, referring to FIG. 6B, the planarization film 450 is formed on the substrate 410. The planarization layer 450 may be formed of an organic material such as benzocyclobutene (BCB) -based resin, acrylic resin, or polyimide resin.

Next, a third conductive layer is laminated on the planarization film 450. The third conductive layer may be formed of a material having a high work function such as indium tin oxide (ITO), indium zinc oxide (IZO), indium cerium oxide (ICO), or zinc oxide (ZnO). The third conductive layer is patterned to form the first electrode 460.

The passivation layer 440 and the planarization layer 450 are etched at the same time as the patterning process of the first electrode 460 to expose either the source electrode 430a or the drain electrode 430b of the thin film transistor T. The first via hole 451 is formed, and at the same time, the gate insulating film 420, the passivation film 440, and the planarization film 450 are etched to form a second via hole 452 exposing the first auxiliary electrode 418. .

On the other hand, in the region where the bank layer is not shown, in the opening forming process of patterning the first electrode 460, forming the bank layer on the first electrode 460, and exposing the first electrode 460, A second via hole 452 may be formed to expose the first auxiliary electrode 418 by etching the bank layer, the planarization film 350, and the passivation film 440.

6C, an organic layer 470 including a light emitting layer is formed on the first electrode 460 by using a fine metal mask (FMM). Alternatively, the organic layer 470 may be formed over the entire surface of the substrate 410, and then patterned with a laser.

Next, the second electrode 480 is formed by stacking a fourth conductive layer on the substrate 410 on which the organic layer 470 is formed. The second electrode 480 may be made of magnesium (Mg), silver (Ag), aluminum (Al), calcium (Ca), or an alloy thereof having low wiring resistance and work function. For the top emission, the second electrode 480 may be formed so thin as to transmit light.

In this case, the second electrode 480 is connected to the first auxiliary electrode 418 through the second via hole 452. As described above, the organic light emitting diode 400 according to the second embodiment of the present invention may be manufactured.

Unlike the first embodiment described above, the organic light emitting diode according to the second embodiment of the present invention can directly reduce the driving voltage by lowering the resistance of the second electrode by directly connecting the second electrode with the first auxiliary electrode. There is an advantage.

Therefore, there is an advantage in that it is possible to provide an organic light emitting device that is easy to apply to large size.

7 is a cross-sectional view of an organic light emitting display device according to a third embodiment of the present invention.

Referring to FIG. 7, the organic light emitting diode 500 according to the third embodiment includes the thin film transistor T, the passivation layer 535, and the first auxiliary electrode 540 of the organic light emitting diode according to the first embodiment. Since the structure up to now is the same, description thereof is omitted.

A planarization film 550 is formed on the passivation film 535 to planarize the step by the thin film transistor T.

The first electrode 560 is positioned on the planarization layer 550. The first electrode 560 has a patterned structure for each pixel, and the first electrode 560 is a thin film transistor T through the first via hole 551 formed in the passivation film 535 and the planarization film 550. Is connected to any one of the source electrode 530a and the drain electrode 530b.

The second via hole 552 exposing the first auxiliary electrode 540 is disposed in the planarization layer 550.

The organic layer 570 is positioned on the first electrode 560, and the second electrode 580 is positioned on the entire surface of the substrate 510 including the organic layer 570. The second electrode 580 is connected to the first auxiliary electrode 540 through the second via hole 552.

The organic light emitting display device according to the third embodiment of the present invention may have a structure in which the second electrode is directly connected to the first auxiliary electrode as in the above-described second embodiment.

8 is a cross-sectional view illustrating an organic light emitting display device according to a fourth embodiment of the present invention.

Referring to FIG. 8, the organic light emitting diode 600 according to the fourth embodiment is made of the same material as the source electrode 630a and the drain electrode 630b, unlike the organic light emitting diode according to the second embodiment. One auxiliary electrode 635 is formed.

The passivation film 640 is positioned on the substrate 610 including the first auxiliary electrode 635, and the planarization film 650 is positioned thereon.

The first electrode 660 is positioned on the planarization layer 650. The first electrode 660 has a patterned structure for each pixel, and the first electrode 660 is formed through the first via hole 651 formed in the passivation layer 640 and the planarization layer 650. Is connected to any one of the source electrode 530a and the drain electrode 530b. In addition, a second via hole 652 exposing the first auxiliary electrode 635 is disposed in the passivation layer 640 and the planarization layer 650.

The organic layer 670 is positioned on the first electrode 660, and the second electrode 680 is positioned on the entire surface of the substrate 610 including the organic layer 670. Here, the second electrode 680 is connected to the first auxiliary electrode 635 through the second via hole 652.

The organic light emitting display device according to the fourth embodiment of the present invention may have a structure in which the second electrode is directly connected to the first auxiliary electrode as in the above-described third embodiment.

As described above, the organic light emitting display device and the method of manufacturing the same according to an embodiment of the present invention, in order to prevent the resistance of the second electrode of the conventional organic light emitting device is high, by connecting the auxiliary electrode and the second electrode, There is an advantage in that the resistance of the two electrodes can be lowered and thus the driving voltage can be lowered.

In addition, there is an advantage in that the luminance unevenness may also be prevented by solving the nonuniform resistance for each region of the second thin electrode through the auxiliary electrode.

Therefore, the organic light emitting display device and its manufacturing method according to the embodiments of the present invention can provide an organic light emitting display device and a method of manufacturing the same is easy to apply to the counter.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 is a cross-sectional view showing an organic light emitting display device according to a first embodiment of the present invention.

2 is a plan view of FIG.

3A to 3C are cross-sectional views of processes illustrating a method of manufacturing an organic light emitting display device according to a first embodiment of the present invention.

4 is a cross-sectional view of an organic light emitting display device according to a second exemplary embodiment of the present invention.

5 is a plan view of FIG. 4.

6A through 6C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a second exemplary embodiment of the present invention.

7 is a cross-sectional view of an organic light emitting display device according to a third exemplary embodiment of the present invention.

8 is a cross-sectional view of an organic light emitting display device according to a fourth embodiment of the present invention.

Claims (12)

Board; A thin film transistor on the substrate, the thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode; A planarization layer on the thin film transistor; A first electrode on the planarization layer and connected to the thin film transistor; An organic layer disposed on the first electrode; A second electrode on the organic layer; And An organic light emitting device comprising a first auxiliary electrode positioned between the substrate and the first electrode and connected to the second electrode. The method of claim 1, The organic light emitting device of claim 1, further comprising a contact spacer and a second auxiliary electrode between the first auxiliary electrode and the second electrode. 3. The method of claim 2, The second auxiliary electrode is positioned on the same plane as the first electrode, and the contact spacer is positioned between the second auxiliary electrode and the first auxiliary electrode. 3. The method of claim 2, The contact spacer is an organic light emitting device consisting of an organic material, a metal, a conductive ball or a multilayer film thereof. 3. The method of claim 2, The first auxiliary electrode is an organic light emitting diode disposed on the thin film transistor. The method of claim 5, The first auxiliary electrode is disposed on the front surface of the substrate except for a via hole connected to the first electrode and the thin film transistor. The method of claim 1, The first auxiliary electrode is made of the same material as the gate electrode. The method of claim 1, The first auxiliary electrode is disposed between the thin film transistor and the first electrode. The method of claim 1, The first auxiliary electrode is made of the same material as the source electrode and drain electrode. The method according to any one of claims 7, 8 and 9, The second electrode is connected to the first auxiliary electrode through a via hole for exposing a portion of the first auxiliary electrode. Forming a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode on the substrate; Forming a first auxiliary electrode on the thin film transistor; Forming a planarization film including a plurality of via holes on the first auxiliary electrode; Forming a first electrode connected to the thin film transistor on the planarization layer; Forming an organic layer on the first electrode; And And forming a second electrode connected to the first auxiliary electrode on the organic film layer. The method of claim 11, A method of manufacturing an organic light emitting display device, the method comprising: forming a contact spacer and a second auxiliary electrode in the via hole.

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