KR20150075017A - Organic light emitting display device, method for repair of the same and - Google Patents

Abstract

An organic light emitting display device according to one embodiment of the present invention includes a substrate, two or more first electrodes which are located on the substrate and are separated, an auxiliary electrode which is located between the first electrodes, a partition which is located on the auxiliary electrode and is formed with an reverse taper structure of at least two layers, a bank layer which defines an emission region by exposing a part of the first electrodes, an organic layer which is located on the emission region and is patterned by the partition, and a second electrode which is located on the organic layer and the partition and is in contact with the auxiliary electrode.

Description

TECHNICAL FIELD [0001] The present invention relates to an organic light emitting display device and a method of repairing the organic light emitting display device.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting display and a repair method thereof, and more particularly, to an organic light emitting display and a repair method thereof that simplify a manufacturing process, reduce resistance of a second electrode, and repair luminance unevenness.

2. Description of the Related Art In recent years, various flat panel display devices capable of reducing weight and volume, which are disadvantages of CRT (Cathode Ray Tube), have been developed. Examples of such flat panel display devices include a liquid crystal display (LCD), a field emission display (FED), a plasma display panel (PDP), and an organic light emitting display (OLED) : Organic Light Emitting Display). Among them, the organic light emitting display (OLED) is a self-emission type display device which excites an organic compound to emit light, and it does not require a backlight used in an LCD, have. In addition, it can be manufactured at low temperature, has a response speed of 1ms or less, has a high response speed, exhibits characteristics such as low power consumption, wide viewing angle, and high contrast.

The organic electroluminescent display device includes a light emitting layer made of an organic material between a first electrode, which is an anode, and a second electrode, which is a cathode, and holes injected from the first electrode and electrons received from the second electrode are combined in the light emitting layer, And the exciton emits light by energy generated when the exciton returns to the ground state. The organic electroluminescent display device can be divided into a backlight type and a front emission type according to the direction in which light is emitted. In the bottom emission type, light is emitted in the lower direction of the substrate, that is, in the direction from the light emitting layer toward the first electrode, and in the top emission type, light is emitted from the upper direction of the substrate, that is, from the light emitting layer toward the second electrode.

However, the top emission type organic light emitting display device has a problem that the resistance of the second electrode is increased and the efficiency of the device is lowered because the second electrode, which is a metal, is formed to be very thin so that light can be transmitted. Further, since the light emitting layer of the organic light emitting display device is deposited using a fine metal mask (FMM), there is a problem that the manufacturing cost of the mask and the manufacturing process of the light emitting layer are complicated.

The present invention provides an organic light emitting display device and a repair method thereof that can simplify the manufacturing process, lower the resistance of the second electrode, and repair luminance unevenness.

According to an aspect of the present invention, an organic light emitting display includes a substrate, first electrodes, an auxiliary electrode, a barrier rib, a bank layer, an organic layer, and a second electrode. The first electrodes are located on the substrate and are spaced apart from one another. The auxiliary electrode is located between the first electrodes. The barrier is located on the auxiliary electrode and has at least two layers of reverse tapered structure. The bank layer exposes a portion of the first electrodes to define a light emitting region. The organic film layer is positioned on the light emitting region and is patterned by the partition. And the second electrode includes a second electrode located on the organic film layer and the barrier rib and contacting the auxiliary electrode.

The barrier ribs are characterized by comprising a first layer made of a material having a high etching rate and a second layer disposed on the first layer and made of a material having an etching rate lower than that of the first layer.

The barrier is formed of a first layer made of a material having a high etching rate, a second layer positioned on the first layer and made of a material having a lower etching rate than the first layer, and a second layer positioned below the first layer, And a third layer of low material.

The barrier rib is characterized in that it comprises at least two materials selected from ITO, ITZO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO and IGZO.

The thickness of the first layer is 30 to 70% of the total thickness of the partition and the thickness of the second layer is 30 to 70% of the thickness of the entire partition.

The thickness of the first layer is 10 to 50% of the thickness of the whole partition wall, and the thickness of the second layer and the third layer is 10 to 50% of the thickness of the whole partition wall.

The outer angle formed between the horizontal line passing through the point where the first layer and the auxiliary electrode meet and the side surface of the first layer is less than 30 degrees and the taper angle of the second layer is less than 30 degrees.

The taper angle of the second layer or the outer angle formed by the horizontal line passing through the point where the first layer and the auxiliary electrode meet and the side surface of the first layer is 30 degrees or less.

And a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode between the substrate and the first electrode.

According to another aspect of the present invention, there is provided an organic light emitting display including a substrate, at least two first electrodes spaced apart from each other, an auxiliary electrode located between the first electrodes, A bank layer which defines a light emitting region by exposing a part of the first electrodes, an organic film layer which is located on the light emitting region and is patterned by the partition, and an organic layer which is continuously located on the organic film layer and the partition wall And a second electrode which contacts the auxiliary electrode.

The first layer of the barrier is in contact with the auxiliary electrode, and the second layer located on the first layer covers the first layer and contacts the auxiliary electrode.

The third layer of the barrier is in contact with the auxiliary electrode, the first layer of the barrier is located on the third layer and the second layer of the barrier is located on the first layer and covers the first layer and contacts the auxiliary electrode .

According to another aspect of the present invention, there is provided a repair method for an organic light emitting display, comprising: a substrate; at least two first electrodes spaced from each other on the substrate; an auxiliary electrode positioned between the first electrodes; A bank layer which defines a light emitting region by exposing a part of the first electrodes, an organic film layer which is located on the light emitting region and is patterned by the barrier ribs, And a second electrode spaced apart from the first electrode and contacting the auxiliary electrode, the method comprising: irradiating the barrier rib with a laser to melt a part of the second electrode located on the barrier rib and the second electrode; And electrodes are continuously formed from the upper surface of the organic film layer to the upper surface of the barrier rib.

The barrier rib is composed of at least two layers, and at least one layer is melted from the uppermost part of the barrier rib by the laser.

When the laser is irradiated on the barrier rib and the second electrode, the at least one layer located at the uppermost portion of the barrier rib and the second electrode are melted and the organic film layer located between the barrier rib and the second electrode is removed.

An organic light emitting display device according to an embodiment of the present invention includes auxiliary electrodes to lower the resistance of the second electrode and lower the driving voltage of the device to facilitate enlargement of the device. It is possible to prevent occurrence of unevenness. In addition, the present invention provides an inverted-tapered conductive partition wall on the auxiliary electrode to form an organic film layer without a mask, thereby simplifying the manufacturing process and reducing the manufacturing cost, and improving the reliability of the partition wall . In addition, the present invention has an advantage in that, when a luminance unevenness occurs, an area in which luminance unevenness occurs can be healed by increasing the contact area with the auxiliary electrode by melting the conductive partition wall with a laser.

1 is a plan view showing an organic light emitting display according to an embodiment of the present invention.
2 is a cross-sectional view illustrating an organic light emitting display device according to an exemplary embodiment of the present invention.
FIGS. 3 and 4 are cross-sectional views illustrating partitions according to embodiments of the present invention. FIG.
5A to 5D are views illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment of the present invention.
FIGS. 6 and 7 are views showing a three-layered partition wall manufactured according to an embodiment of the present invention. FIG.
8 is a plan view of an organic light emitting display device according to an embodiment of the present invention.
FIG. 9 and FIG. 10 are cross-sectional views illustrating a contact region between an auxiliary electrode and a second electrode according to an embodiment of the present invention. FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a plan view of an organic light emitting display according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view illustrating an organic light emitting display according to an embodiment of the present invention.

Referring to FIG. 1, an organic light emitting display 100 according to an exemplary embodiment of the present invention includes an active region AA on a substrate 110, and an image is formed through the active region AA. A plurality of red (R), green (G) and blue (B) pixels are formed in the active area AA, and the plurality of pixels are controlled to be turned on by the scan signal and the data signal. The plurality of pixels includes a first electrode (not shown), which is an anode electrode connected to the thin film transistor, and a second electrode 180, which is a cathode electrode facing the first electrode. A cathode power supply line CPL for supplying a low potential voltage to the second electrode 180 is disposed on both sides of the active area AA and a second electrode 180 is formed to a thin thickness over the entire active area AA, Power line (CPL).

In the present invention, the auxiliary electrode 155 is further included to prevent the resistance of the second electrode 180 from increasing. More specifically, the auxiliary electrode 155 is formed between the plurality of pixels in the direction crossing the cathode power supply lines (CPL). As shown in the drawing, the auxiliary electrode 155 may be formed one by one between each pixel, but not limited thereto, and may be formed between two pixels or one pixel among three or more pixels. The auxiliary electrode 155 is connected in a line form to the second electrode 180 formed on the entire surface of the active area AA while both ends thereof are respectively connected to the cathode power supply line CPL. Therefore, the auxiliary electrode 155 has an advantage that the resistance of the second electrode 180 can be lowered, thereby preventing luminance unevenness of the display device.

In the following, the organic light emitting display device 100 of the present invention is composed of a plurality of pixels, but two subpixels will be described as an example for convenience of explanation.

2, an organic light emitting display 100 according to an exemplary embodiment of the present invention includes a semiconductor layer 115 on a substrate 110, a gate insulating layer 120 on the semiconductor layer 115, Located. A gate electrode 125 positioned to correspond to the semiconductor layer 115 is located on the gate insulating layer 120 and a cathode power line CPL is located on both sides of the substrate 110. The interlayer insulating film 130 is located on the gate electrode 125 and the cathode power line CPL and the source electrode 137a and the drain electrode 137b are located on the interlayer insulating film 130. [ The source electrode 137a and the drain electrode 137b are connected to the semiconductor layer 115 through the first contact hole 135 penetrating the interlayer insulating film 130 and the gate insulating film 120, respectively. Thus, a thin film transistor (TFT) including the semiconductor layer 115, the gate electrode 125, the source electrode 137a, and the drain electrode 137b is formed.

The planarization film 140 is positioned on the thin film transistor TFT and the first electrode 150 and the auxiliary electrode 155 are positioned on the planarization film 140. The first electrode 150 is connected to the drain electrode 137b of the thin film transistor TFT through a via hole 145 passing through the planarization layer 140. [ The auxiliary electrodes 155 are located between the first electrodes 150 spaced apart from each other and spaced apart from the first electrodes 150. The auxiliary electrode 155 located on both sides of the substrate 110 is connected to the cathode power line CPL through the second contact hole 136 formed along the planarization layer 140 and penetrating the interlayer insulating layer 130. [ do.

The bank layer 160 is located on the first electrode 150 and the auxiliary electrode 155. In the bank layer 160, an opening 165 exposing the first electrode 150 is formed to define a pixel and a light emitting region EA. In addition, the bank layer 160 exposes the auxiliary electrode 155 through the opening 165. A barrier rib 170 is located on the auxiliary electrode 155. The barrier ribs 170 are formed in a reverse taper shape on the auxiliary electrodes 155 and are spaced apart from the adjacent bank layers 160. A detailed description of the barrier ribs 170 will be described later.

The organic layer 175 is disposed on the substrate 110 on which the first electrode 150, the bank layer 160, and the barrier ribs 170 are formed. The organic film layer 175 is deposited on the first electrode 150, the bank layer 160 and the barrier ribs 170 and is not patterned by the barrier ribs 170 and deposited on the auxiliary electrodes 155. The second electrode 180 is located on the organic film layer 175. The second electrode 180 is also formed on the auxiliary electrode 155, which is deposited on the entire surface of the substrate 110 and is located under the barrier rib 170. That is, the second electrodes 180 are all formed continuously without being patterned by the barrier ribs 170 on the front surface of the substrate 100. Therefore, the second electrode 180 is electrically connected to the auxiliary electrode 155 located under the barrier rib 170, so that the resistance is reduced by the auxiliary electrode 155. Therefore, by forming the auxiliary electrode in the second electrode having a large resistance, the resistance of the second electrode can be lowered and the driving voltage of the element can be lowered to facilitate the enlargement, and the voltage of the second electrode is nonuniform due to the resistance, Can be prevented.

3 and 4 are cross-sectional views illustrating barrier ribs according to embodiments of the present invention. Referring to FIG. 3, the barrier rib 170 of the present invention is disposed on the auxiliary electrode 155 and includes a first layer 172 located below and a second layer 174 located on the first layer 172 Layer structure. ITO, ITO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO, and ITO, which are in contact with the auxiliary electrode 155 and form the lower part of the barrier rib 170, IGZO. ITO, ITO, IO, SnO, ZnO, ISnO, IZO, IGO, and GZO (IZO) are formed on the first layer 172 of the barrier ribs 170, And IGZO, and is made of a material different from the material of the first layer 172.

The first layer 172 is made of a material having a higher etch rate for the same etchant than the second layer 174 and the second layer 174 is made of a material having a higher etch rate for the same etchant than the second layer 174. [ Is made of a material having a lower etching rate than the first layer (172). For example, if the first layer 172 is made of ZnO, the second layer 174 can be formed of ITO having a higher etching rate than ZnO. That is, when the first layer 172 is selected from any one of ITO, ITZO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO, and IGZO, the second layer 174 is formed on the first layer 172, The barrier ribs 170 can be formed of a material having a smaller etching rate.

The barrier rib 170 of the present invention has a total thickness of 0.3 탆 or more and is thicker than the bank layer 160. The thickness of the first layer 172 is 30 to 70% of the thickness of the entire partition 170, and the thickness of the first layer 172 is 30 to 70% The thickness of the second layer 174 is 30 to 70% of the thickness of the entire partition 170. This is to improve the adhesion between the barrier 170 and the auxiliary electrode 155 and to improve the reliability of the barrier tapered barrier 170. At this time, the outer angle? 1 formed by the horizontal line L passing through the point where the first layer 172 and the auxiliary electrode 155 meet and the side surface of the first layer 172 is 30 degrees or less, The taper angle 2 of the second layer 174 of the first layer 172 is less than 30 degrees or the horizontal line L passing through the point where the first layer 172 and the auxiliary electrode 155 meet, 1 of the second layer 174 and the taper angle 2 of the second layer 174 may be both 30 degrees or less. The outer angle? 1 between the horizontal line L passing through the point where the first layer 172 and the auxiliary electrode 155 meet and the side surface of the first layer 172 and the taper angle? 2 of the second layer 174 If the thickness is less than 30 degrees, the barrier ribs 170 are well formed in an inverted tapered shape, so that the organic film layer can be patterned in a subsequent process of depositing the organic film layer.

Referring to FIG. 4, the barrier rib 170 of the present invention may have three layers. The partition 170 is comprised of a lowermost third layer 176, a first layer 172 located on the third layer 176 and a second layer 174 located on the first layer 172 . ITO, ITO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO, and ITO, which are in contact with the auxiliary electrode 155 and form the lower part of the barrier rib 170, IGZO. The first layer 172 is located on the third layer 176 and forms a middle layer of the barrier rib 170. The first layer 172 is formed of ITO, ITZO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO and IGZO But is made of a material different from the material of the third layer 176. The second layer 174 is formed on the first layer 172 and forms the uppermost part of the barrier rib 170. The second layer 174 may be formed of ITO, ITZO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO, But is made of a material different from the material of the first layer 172.

More specifically, the three-layered barrier ribs 170 are formed in an inverted tapered shape, and may have an hourglass shape having a wide width at the top and bottom. To this end, the third layer 176 is made of a material having a lower etch rate for the same etchant than the first layer 172, and the first layer 172 has an etch rate for the same etchant than the second layer 174 And the second layer 174 is made of a material having a lower etching rate than that of the first layer 172. [ For example, if the third layer 176 is made of ITO, the first layer 172 is formed of IGZO having a larger etching rate than ITO, and the second layer 174 is formed of ITO having a larger etching rate than IGZO can do. That is, when the third layer 176 is selected from any one of ITO, ITZO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO, and IGZO, the first layer 172 is a third layer 176, The second layer 174 may be formed of a material having a lower etching rate than that of the first layer 172 to form the barrier ribs 170. As described above, the barrier ribs 170 of the present invention are all made of a conductive material, for example, a metal oxide. The barrier 170 made of a conductive material is excellent in adhesion to the auxiliary electrode 155 at the bottom to prevent peeling of the barrier 170 and provides process stability that is not damaged even at high temperatures while realizing pattern miniaturization There is an advantage that it can be secured.

The barrier rib 170 of the present invention has a total thickness of 0.3 탆 or more and is thicker than the bank layer 160. The thickness of the third layer 176 may be set to be equal to or greater than the thickness of the entire partition wall 170 in the case where the barrier rib 170 is formed of three layers including a third layer 176, a first layer 172 and a second layer 174. [ The thickness of the first layer 172 is 10 to 50% of the thickness of the entire partition wall 170 and the thickness of the second layer 174 is 10 to 50% To 50%. This is to improve the adhesion between the barrier 170 and the auxiliary electrode 155 and to improve the reliability of the barrier tapered barrier 170. At this time, the outer angle [theta] 1 formed by the first layer 172 and the horizontal line L is 30 degrees or less, or the taper angle [theta] 2 of the second layer 174 of the partition 170 is 30 degrees or less Or the outer angle θ1 between the horizontal line L passing through the point where the first layer 172 and the auxiliary electrode 155 meet and the side surface of the first layer 172 and the taper angle 2 < / RTI > can both be less than 30 degrees. The outer angle? 1 between the horizontal line L passing through the point where the first layer 172 and the auxiliary electrode 155 meet and the side surface of the first layer 172 and the taper angle? 2 of the second layer 174 If the thickness is less than 30 degrees, the barrier ribs 170 are well formed in an inverted tapered shape, so that the organic film layer can be patterned in a subsequent process of depositing the organic film layer.

As described above, the organic light emitting display device according to an embodiment of the present invention includes the auxiliary electrode, thereby lowering the resistance of the second electrode, lowering the driving voltage of the device, facilitating enlargement of the device, It is possible to prevent the luminance from being uneven due to the non-uniformity of the voltage. In addition, the present invention provides an inverted-tapered conductive partition wall on the auxiliary electrode to form an organic film layer without a mask, thereby simplifying the manufacturing process and reducing the manufacturing cost, and improving the reliability of the partition wall .

Hereinafter, a method of manufacturing an organic light emitting display according to an embodiment of the present invention will be described. 5A to 5D are views illustrating a method of manufacturing an organic light emitting display according to an exemplary embodiment of the present invention. In the following, the same reference numerals are assigned to the same components as those in Fig. 2 described above to facilitate understanding.

Referring to FIG. 5A, amorphous silicon (a-si) is deposited on a substrate 110 made of glass, plastic, or a conductive material, subjected to a dehydrogenation process, To crystallize the amorphous silicon layer into a polycrystalline silicon layer. Thereafter, the polycrystalline silicon layer is patterned using a mask to form the semiconductor layer 115. Although not shown, a buffer layer may be further formed before the semiconductor layer 115 is formed. The buffer layer prevents diffusion of impurities present on the surface of the substrate 110 during the crystallization process to diffuse into the amorphous silicon layer, and may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a laminated structure thereof.

Next, a gate insulating layer 120 is formed on the substrate 110 including the semiconductor layer 115. The gate insulating layer 120 may be formed of silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of multiple layers thereof. A gate electrode 125 is formed on the gate insulating film 120 in a region corresponding to the semiconductor layer 115 and a cathode power supply line CPL is formed on both sides of the substrate 110. The gate electrode 125 and the cathode power line CPL may be a single layer of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), or an alloy thereof and may be a molybdenum / aluminum / molybdenum / Al / Mo) or titanium / aluminum / titanium (Ti / Al / Ti).

Next, an interlayer insulating layer 130 is formed on the substrate 110 on which the gate electrode 125 and the cathode power line CPL are formed. The interlayer insulating layer 130 may be formed of silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of multiple layers thereof. Next, the interlayer insulating layer 130 is etched to form a first contact hole 135 exposing both sides of the semiconductor layer 115, and a second contact hole exposing the cathode power line CPL is formed. A source electrode 137a and a drain electrode 137b connected to the semiconductor layer 115 are formed through the first contact hole 135 to form the semiconductor layer 115, the gate electrode 125, and the source electrode A thin film transistor (TFT) including the gate electrode 137a and the drain electrode 137b is formed. The source electrode 137a and the drain electrode 137b may be a single layer made of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti) or an alloy thereof, and molybdenum / aluminum / molybdenum Al / Mo) or titanium / aluminum / titanium (Ti / Al / Ti).

Next, referring to FIG. 5B, a planarization layer 140 is formed on a substrate 110 on which a thin film transistor (TFT) is formed. The planarization layer 140 may be formed of an organic material such as a benzocyclobutene (BCB) resin, an acrylic resin, or a polyimide resin. Then, the planarization film 140 is patterned to form a via hole 145 that exposes the drain electrode 137b of the thin film transistor (TFT). Then, a material having a high work function such as ITO, IZO or ZnO is deposited on the planarization layer 140 and the via hole 145 and patterned to form the first electrode 150 and the auxiliary electrode 155. The first electrode 150 is electrically connected to the drain electrode 137b and the auxiliary electrode 155 is formed between the first electrode 150 and the via hole 145. The first electrode 150 is electrically connected to the drain electrode 137b. An auxiliary electrode 155 outside the substrate 110 is formed along the planarization film 140 and connected to the cathode power line CPL exposed by the second contact hole 136.

5C, a bank layer 160 is formed on a substrate 110 on which a first electrode 150 and an auxiliary electrode 155 are formed. The bank layer 160 is formed of an organic material such as polyimide, benzocyclobutene resin, or acrylate. Then, the bank layer 160 is patterned to form openings 165 that expose the first electrode 150 and the auxiliary electrode 155.

Next, the barrier ribs 170 are formed on the auxiliary electrodes 155 exposed by the openings 165. In detail, a first material selected from ITO, ITZO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO and IGZO is deposited on the substrate 110 on which the bank layer 160 is formed, and ITO, ITZO, A second material having a lower etching rate than the first material is deposited on the first layer 172 and the first layer 172 by etching with an etchant in SnO, ZnO, ISnO, IZO, IGO, GZO, and IGZO, And a second layer 174 disposed on the barrier layer 170. The second layer 174 has a width larger than the first layer 172 because the first layer 172 having a large etching rate for the etchant is etched rapidly and the second layer 174 having a small etching rate is etched slowly, A tapered partition 170 is produced. Although the barrier ribs 170 having a two-layer structure have been described in the present embodiment, in the case of the barrier ribs 170 having a three-layer structure, a third substance having a lower etching rate than the first substance is first layered, And then laminating the second material and etching with an etchant. The thickness, taper angle, etc. of the barrier ribs 170 have been described above, so a detailed description thereof will be omitted.

Next, referring to FIG. 5D, an organic layer 175 is formed on the substrate 110 having the barrier ribs 170 formed thereon. The organic film layer 175 is deposited on the first electrode 150, the bank layer 160 and the barrier ribs 170 but is patterned by the barrier ribs 170 having an inverted taper shape, The organic film layer 175 is not deposited. The organic layer 175 may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL). For example, the organic film layer 175 is formed using evaporation.

Next, a second electrode 180 is formed on the substrate 110 on which the organic layer 175 is formed. The second electrode 180 is stacked on the auxiliary electrode 155 while being stacked along the surface of the barrier 170 unlike the organic film layer 175. [ Accordingly, the second electrode 180 is electrically connected to the auxiliary electrode 155, and is connected to the auxiliary power supply line (CPL) by being connected to the auxiliary electrode 155 at the outside of the substrate 110. The second electrode 180 may be made of magnesium (Mg), silver (Ag), aluminum (Al), calcium (Ca), or an alloy thereof. Accordingly, an organic light emitting display 100 according to an embodiment of the present invention is manufactured.

6 and 7 are images showing a three-layered barrier rib formed according to an embodiment of the present invention. Referring to FIGS. 6 and 7, ITO is formed at the lowermost portion, IGZO is formed thereon, and ITO / IGZO / ITO three-layered barrier having ITO at the top is formed. Here, the total thickness of the barrier ribs was 3800 angstroms, the lowest ITO was 1000 angstroms, the IGZO was 2000 angstroms, and the uppermost ITO was 800 angstroms. IGZO having a high etching rate is formed between the ITOs having a small etching rate due to the difference in the etching rates between ITO and IGZO, and it is confirmed that the reverse tapered barrier ribs similar to those of the hourglass are formed.

As described above, the organic light emitting display device according to an embodiment of the present invention includes the auxiliary electrode, thereby lowering the resistance of the second electrode, lowering the driving voltage of the device, facilitating enlargement of the device, It is possible to prevent the luminance from being uneven due to the non-uniformity of the voltage. In addition, the present invention provides an inverted-tapered conductive partition wall on the auxiliary electrode to form an organic film layer without a mask, thereby simplifying the manufacturing process and reducing the manufacturing cost, and improving the reliability of the partition wall .

Meanwhile, in the organic light emitting display device according to an embodiment of the present invention, when luminance unevenness occurs due to the resistance of the second electrode, luminance irregularity can be repaired using laser welding.

FIG. 8 is a plan view of an organic light emitting display according to an embodiment of the present invention, and FIGS. 9 and 10 are cross-sectional views illustrating contact regions of an auxiliary electrode and a second electrode according to an exemplary embodiment of the present invention.

8, an organic light emitting display 100 according to an exemplary embodiment of the present invention includes an active region AA on a substrate 110 and red (R), green (R), and blue G) and blue (B) are formed. The plurality of pixels includes a first electrode (not shown) and a second electrode 180 that is a cathode electrode facing the first electrode. The auxiliary electrode 155 is formed on both sides of the active area AA to prevent the second electrode 180 from having a large resistance and a cathode power supply line CPL for supplying a low potential voltage to the second electrode 180, .

Luminance irregularity may occur in a part of the organic light emitting display device 100 according to the resistance of the second electrode 180. [ As shown in Fig. 8, there is a luminance unevenness region H in which the luminance appears non-uniformly in some regions. When the uneven luminance region H is generated in the organic light emitting display device 100, the display quality is lowered and the reliability is lowered. Therefore, in the present invention, the nonuniformity in luminance of the organic light emitting display device can be repaired using laser welding, which will be described later. 8, 30 pixels are included in the active area AA and the luminance unevenness area H is enlarged. However, the present invention is not limited thereto. It does not.

Referring to FIG. 9, the structure of the portion of the barrier rib 170 in the luminance uneven region H of FIG. 8 will be described. A barrier rib 170 is located on the auxiliary electrode 155. The partition 170 is comprised of a lowermost third layer 176, a first layer 172 located on the third layer 176 and a second layer 174 located on the first layer 172 . The detailed description of the barrier ribs 170 has been described above and thus will be omitted.

The second electrode 180 formed along the bank layer 160 is electrically connected to the auxiliary electrode 155 and the barrier rib 170. The second electrode 180 is formed along the bank layer 160 in the non- Contacted to a portion of the third layer 176 of the first barrier layer 170 and the second layer 174 and the side of the first layer 172 of the barrier 170. The second electrode 180 formed on the upper surface of the second layer 174 of the barrier rib 170 and the second electrode 180 formed along the bank layer 160 are spaced apart from each other. Such a structure occurs because the deposition uniformity of the second electrode 180 is low. In this case, since the contact area CS of the second electrode 180 formed along the bank layer 160 with the barrier rib 170 having conductivity is very small, the resistance of the second electrode 180 becomes high. Therefore, a region where the resistance of the second electrode 180 is increased appears as a luminance unevenness region H in which a luminance non-uniformity phenomenon occurs.

The contact area CS between the second electrode 180 and the barrier ribs 170 may be set to be a value obtained by melting a part of the barrier ribs 170 by irradiating the barrier ribs 170 located in the non- Thereby reducing the resistance of the second electrode 180.

More specifically, the barrier ribs 170 located in the luminance unevenness region H are irradiated with a laser. The laser may be irradiated to the barrier ribs 170 from the bottom of the substrate 110 or from the top of the barrier ribs 170 to the barrier ribs 170 or from both sides of the barrier ribs 170. The irradiation direction of the laser does not matter much if it is irradiated in any direction as long as it can melt the barrier ribs 170. As the laser irradiation condition, a source, a focus, a power, an irradiation time, etc. for generating a laser can be appropriately adjusted. Any laser may be used as long as it can melt the first layer 174 of the barrier rib 170. However, the irradiation temperature of the laser can be adjusted to 350 ° C or less so that the influence of the laser on elements such as the thin film transistor of the organic light emitting display can be minimized. Further, in order to repair the brightness unevenness of the organic light emitting display device 100, it is possible to irradiate laser beams to all the partition walls 170 located in the luminance ununiform region H. [ However, the present invention is not limited to this, and it is possible to irradiate the laser beams to the barrier ribs 170 which are not located in the luminance unevenness region H but are very close to each other.

Referring to Fig. 10, the final structure of the laser irradiated barrier ribs 170 is shown. When the laser beam is irradiated to the barrier ribs 170, the second layer 174 located at the uppermost portion of the barrier ribs 170 is melted down by the laser, and the organic layer 175 is melted and removed. The second layer 174 is made of any one selected from ITO, ITZO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO and IGZO and melts onto the auxiliary electrode 150 and the third layer 176 . Then, the first layer 172 of the partition 170 does not flow down but only a part of the green. The irradiation of the laser is performed until the second layer 174 melts and can cover both the auxiliary electrode 150 and the third layer 176. Accordingly, the second layer 174 covers the first layer 172 and the third layer 176 of the partition wall 170. When the second layer 174 of the barrier rib 170 is melted by the laser irradiation, the second electrode 180 located on the second layer 174 melts to some extent and is connected to the adjacent second electrode 180. Accordingly, the contact area CS in which the second electrode 180 contacts the barrier rib 170 is remarkably improved, so that the resistance of the second electrode 180 can be lowered and the uneven brightness can be repaired .

As described above, the organic light emitting display device according to an embodiment of the present invention includes the auxiliary electrode, thereby lowering the resistance of the second electrode, lowering the driving voltage of the device, facilitating enlargement of the device, It is possible to prevent the luminance from being uneven due to the non-uniformity of the voltage. In addition, the present invention provides an inverted-tapered conductive partition wall on the auxiliary electrode to form an organic film layer without a mask, thereby simplifying the manufacturing process and reducing the manufacturing cost, and improving the reliability of the partition wall . In addition, the present invention has an advantage in that, when a luminance unevenness occurs, an area in which luminance unevenness occurs can be healed by increasing the contact area with the auxiliary electrode by melting the conductive partition wall with a laser.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood that the invention may be practiced. It is therefore to be understood that the embodiments described above are to be considered in all respects only as illustrative and not restrictive. In addition, the scope of the present invention is indicated by the following claims rather than the detailed description. Also, all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

100: organic electroluminescent display device 110: substrate
115: semiconductor layer 120: gate insulating film
125: gate electrode 130: interlayer insulating film
137a: source electrode 137b: drain electrode
140: planarization film 150: first electrode
155: auxiliary electrode 160: bank layer
170: barrier rib 175: light emitting layer
180: second electrode CPL: cathode power supply line

Claims (15)

Board;
At least two first electrodes positioned on the substrate and spaced apart from each other;
An auxiliary electrode disposed between the first electrodes;
A barrier disposed on the auxiliary electrode and having at least two inverse tapered structures;
A bank layer exposing a part of the first electrodes to define a light emitting region;
An organic layer disposed on the light emitting region and patterned by the partition; And
And a second electrode located on the organic film layer and the barrier rib and contacting the auxiliary electrode.
The method according to claim 1,
Wherein the barrier rib includes a first layer made of a material having a high etching rate and a second layer disposed on the first layer and having an etching rate lower than that of the first layer. .
The method according to claim 1,
Wherein the barrier is formed of a first layer of a material with a high etch rate, a second layer of a material located on the first layer and having a lower etch rate than the first layer, And a third layer made of a material having a lower etching rate than the first layer.
The method according to claim 2 or 3,
Wherein the barrier rib comprises at least two materials selected from ITO, ITZO, IO, SnO, ZnO, ISnO, IZO, IGO, GZO and IGZO.
3. The method of claim 2,
Wherein the thickness of the first layer is 30 to 70% of the thickness of the entire barrier ribs, and the thickness of the second layer is 30 to 70% of the thickness of the entire barrier ribs.
The method of claim 3,
Wherein the thickness of the first layer is 10 to 50% of the thickness of the entire barrier ribs and the thickness of the second layer and the third layer is 10 to 50% of the thickness of the whole barrier ribs.
The method according to claim 2 or 3,
Wherein a horizontal line passing through a point where the first layer and the auxiliary electrode meet and an outer angle formed by a side surface of the first layer are less than 30 degrees and a taper angle of the second layer is less than 30 degrees. .
The method according to claim 2 or 3,
Wherein an angle formed by a horizontal line passing through a point where the first layer and the auxiliary electrode meet and an outer angle formed by a side surface of the first layer or a taper angle of the second layer is 30 degrees or less.
The method according to claim 1,
And a thin film transistor including a gate electrode, a semiconductor layer, a source electrode, and a drain electrode between the substrate and the first electrode.
Board;
At least two first electrodes positioned on the substrate and spaced apart from each other;
An auxiliary electrode disposed between the first electrodes;
A barrier disposed on the auxiliary electrode and having at least two layers;
A bank layer exposing a part of the first electrodes to define a light emitting region;
An organic layer disposed on the light emitting region and patterned by the partition; And
And a second electrode continuously disposed on the organic film layer and the barrier ribs and contacting the auxiliary electrode.
11. The method of claim 10,
Wherein the first layer of the barrier is in contact with the auxiliary electrode, and the second layer located on the first layer covers the first layer and contacts the auxiliary electrode.
11. The method of claim 10,
The third layer of the barrier is in contact with the auxiliary electrode, the first layer of the barrier is located on the third layer, the second layer of the barrier is located on the first layer, And contacts the auxiliary electrode.
A plasma display apparatus comprising: a substrate; at least two first electrodes disposed on the substrate and spaced apart from each other; an auxiliary electrode positioned between the first electrodes; barrier ribs disposed on the auxiliary electrode and having at least two inverse tapered structures; The organic light emitting display according to any one of claims 1 to 3, wherein the organic light emitting layer is formed on the substrate, the organic light emitting layer is formed on the organic layer, The organic light emitting display according to claim 1,
Irradiating the barrier rib with a laser to dissolve a part of the second electrode located on the barrier rib and the barrier rib; And
Wherein the second electrode is formed continuously from an upper surface of the organic layer to an upper surface of the partition.
14. The method of claim 13,
Wherein the barrier ribs comprise at least two layers, and at least one layer is melted from the top of the barrier ribs by the laser.
15. The method of claim 14,
Wherein when the laser is irradiated on the barrier rib and the second electrode, the at least one layer located at the top of the barrier rib and the second electrode are melted down and the organic film layer located between the barrier rib and the second electrode is removed. Wherein the organic light emitting display device comprises a light emitting diode.

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