KR20080060523A - Organic light emitting diodes display device and method of manufacturing the same - Google Patents

Abstract

An organic light emitting diode display device and a method for manufacturing the same are provided to prevent short between pixels by including a pixel separation partition. An organic light emitting diode display device includes a first substrate(100), a first electrode(110), a pixel separation partition(150), an organic light emitting layer(120), a second electrode(130), and a second substrate(200). The first substrate includes a plurality of pixels(P). The first electrode is positioned on the first substrate. The pixel separation partition is positioned along a periphery of each of the pixels. The organic light emitting layer is positioned on the first electrode. The second electrode is positioned on the organic light emitting layer and separated by pixels through the pixel separation partition. The second substrate faces the first substrate and includes a thin film transistor(Tr) electrically connected to the second electrode.

Description

Organic light emitting diode display and manufacturing method thereof {ORGANIC LIGHT EMITTING DIODES DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME}

1 is a plan view of an organic light emitting diode display according to a first exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

3A to 3J are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device according to a second embodiment of the present invention.

 (Explanation of symbols for the main parts of the drawing)

 100: first substrate 110: first electrode

 115: buffer layer 120: organic light emitting layer

 130: second electrode 145: contact member

 150: pixel separation partition 151: leg portion

 152: head 200: second substrate

 245 contact electrode

 E: organic light emitting diode

 Tr: Thin Film Transistor

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic light emitting diode display and a manufacturing method thereof, and more particularly, to a dual panel type organic light emitting display device and a manufacturing method thereof.

The organic light emitting diode display is self-luminous and does not require a backlight such as a liquid crystal display, so it is not only lightweight and thin, but also can be manufactured through a simple process, thereby increasing price competitiveness. In addition, organic light emitting diode display devices are rapidly rising as next generation displays due to low voltage driving, high luminous efficiency, and wide viewing angle.

The organic light emitting diode display includes an organic light emitting diode for generating light and a thin film transistor for controlling the driving of the organic light emitting diode. Here, the thin film transistors individually drive the organic light emitting diodes, so that the organic light emitting diodes may exhibit the same luminance even when a low current is applied to the organic light emitting diodes. As a result, the organic light emitting diode display device includes a thin film transistor, which is advantageous for low power consumption, high definition, and large size, and can improve the life of the device.

In the organic light emitting diode display device as described above, the aperture ratio of the organic light emitting diode display is reduced by the thin film transistor as the image is transmitted to the user through the substrate.

In addition, as the organic light emitting diode display device forms a thin film transistor and an organic light emitting diode on one substrate, the manufacturing process time of the organic light emitting diode display device is increased and the process yield is lowered.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting diode display device capable of preventing deterioration of an organic light emitting layer, lowering process cost, and improving process yield.

In addition, another object of the present invention is to provide a method of manufacturing the organic light emitting diode display.

In order to achieve the above technical problem, an aspect of the present invention provides an organic light emitting diode display. The organic light emitting diode display may include a first substrate having a plurality of pixels, a first electrode disposed on the first substrate including the plurality of pixels, a pixel separation barrier disposed along an outer edge of each pixel, and the first substrate. An organic light emitting layer disposed on one electrode, a second electrode disposed on the organic light emitting layer, separated by pixels by the pixel separation barrier, and a thin film transistor facing the first substrate and electrically connected to the second electrode. A second substrate formed,

The pixel separation barrier may include a leg having a first area and a head disposed on the leg and having a second area larger than the first area.

In order to achieve the above technical problem, there is provided a method of manufacturing an organic light emitting diode display according to another aspect of the present invention. The manufacturing method includes providing a first substrate on which a plurality of pixels are defined, forming a first electrode on a first substrate including the plurality of pixels, and forming a pixel separation barrier along an outer edge of each pixel. Forming an organic light emitting layer on the first electrode, forming a second electrode naturally patterned by the pixel separation barrier on the organic light emitting layer, and electrically connecting the first substrate and the second electrode. Bonding the second substrate on which the thin film transistor is connected;

The pixel separation barrier may include a leg having a first area and a head disposed on the leg and having a second area larger than the first area.

Hereinafter, an organic light emitting diode display according to the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a plan view of an organic light emitting diode display according to a first exemplary embodiment of the present invention. 1 illustrates an enlarged view of three pixels of an organic light emitting diode display.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

1 and 2, the organic light emitting diode display includes a plurality of pixels and includes first and second substrates 100 and 200 spaced apart from each other. Here, the organic light emitting diodes E separated for each pixel P are disposed on the first substrate 100. In addition, the second substrate 200 has an opposing surface facing the first substrate 100, and thin film transistors Tr electrically connected to the organic light emitting diodes E are disposed on the opposing surface.

In detail, the first substrate 100 includes a plurality of pixels P. In this case, each of the pixels P includes a light emitting part PL for generating light and a non-light emitting part PNL disposed around the light emitting part PL.

The first electrode 110 is disposed on the first substrate 100 including the plurality of pixels P. The first electrode 110 is commonly used for the plurality of pixels P. That is, the first electrode 110 is integrally formed with the plurality of pixels P.

In this case, the first electrode 110 is formed of a transparent conductive material. For example, the first electrode 110 may be made of ITO or IZO.

In addition, the auxiliary electrode 105 may be positioned between the first substrate 100 and the first electrode 110. As described above, since the first electrode 110 is made of a material having a high resistance and is integrally formed in the plurality of pixels P, the luminance of the completed organic light emitting diode display may be uneven. As a result, the auxiliary electrode 105 serves to reduce the resistance difference between the first electrode 110. Therefore, the auxiliary electrode 105 is formed of a metal of low resistance. For example, the auxiliary electrode 105 may be formed of Al, AlNd, Mo, Cr, or the like.

The buffer layer 115 exposing the light emitting part PL is disposed on the first electrode 110. That is, the buffer layer 115 is disposed in the non-light emitting portion NPL. That is, the light emitting part PL and the non-light emitting part NPL are defined in the pixel P by the buffer layer 115.

Here, the buffer layer 115 serves to prevent a short failure between the first electrode 110 and the second electrode 130 to be described later. In addition, the buffer layer 115 serves to fix the pixel separation barrier 150 to be described later on the first electrode 110. This is because the pixel separation barrier 150 is mainly made of an organic material, and thus has poor adhesion with the first electrode 110. As a result, the buffer layer 115 should be made of an insulating material having excellent adhesion to the first electrode 110 and the partition wall 142, respectively. For example, the buffer layer 115 may be made of silicon oxide, silicon nitride, or the like.

The pixel isolation barrier 150 is disposed on the buffer layer 115. In other words, the pixel separation barrier 150 is disposed along the periphery of the pixel P, thereby separating each pixel P.

In this case, the pixel separation barrier 150 includes a leg part 151 having a first area and a head part 152 having a second area larger than the first area and disposed on the leg part 151. That is, the pixel separation barrier 150 has a cross-sectional shape of 'T'. In this case, the leg portion 151 and the head portion 152 may be formed using one mask to reduce the number of processes. That is, the leg portion 151 and the head portion 152 are each made of a photosensitive resin having different properties. That is, the leg portion 151 is made of negative photosensitive resin. In addition, the head 152 is made of a positive photosensitive resin.

Thus, in the process of forming the second electrode 130, the pixel separation barrier 150 serves to naturally pattern the second electrode 130 for each pixel P without undergoing a separate shadow mask or etching process. As a result, the pixel separation barrier 150 separates the organic light emitting diode E for each pixel P. Referring to FIG.

The organic light emitting layer 120 is disposed on at least the first electrode 110 of the light emitting region. Herein, the organic light emitting layer 120 generates light as electrons and holes provided from the first electrode 110 and the second electrode 130 are recombined, respectively.

In addition, the organic emission layer 120 may further include an organic layer, such as a hole injection layer, a hole transport layer, a hole suppression layer, an electron transport layer, and an electron injection layer, on the top or bottom surface thereof. The organic layer appropriately adjusts the energy level at each interface between the first electrode 110, the organic light emitting layer 120, and the second electrode 130, thereby efficiently injecting electrons and holes into the organic light emitting layer 120. have. As a result, the luminous efficiency of the completed organic light emitting display device can be improved.

The second electrode 130 is disposed on the organic light emitting layer 120. The second electrode 120 is separated for each pixel P by the pixel separation barrier 150. As described above, since the pixel separation barrier 150 includes a leg portion 151 and a head portion 152 having different areas, the second electrode 120 does not use a separate etching process and a shadow mask. It can be patterned for each pixel P without. As a result, the organic light emitting layer 120 may be prevented from being deteriorated by being exposed to the etchant for forming the second electrode 130. In addition, since an expensive shadow mask does not have to be used, the process cost can be reduced. The second electrode 130 is a reflective conductive material, and may be made of one material selected from the group consisting of Mg, Ca, Al, Ag, Ba, and alloys thereof.

Thus, organic light emitting diodes separated for each pixel P are disposed on the first substrate 100.

In addition, the contact member 145 is disposed on the first electrode 110 of the pixel P. In the drawing, the contact member 145 is illustrated as being disposed in the light emitting part PL of the pixel P. However, the contact member 145 is not limited thereto and may be disposed in the non-light emitting part PNL of the pixel P.

Here, the contact member 145 serves to electrically connect the organic light emitting diode E and the thin film transistor Tr spaced apart from each other.

That is, the contact member 145 includes an insulating pattern 117, a protrusion member 119, and a conductive film 132. Here, the insulating pattern 117 compensates for the adhesive force between the protruding member 119 and the first electrode 110, and prevents a short between the first electrode 110 and the second electrode 130. The protrusion member 119 protrudes the conductive film 132 toward the second substrate 200. Thus, the second electrode 130 and the thin film transistor Tr spaced apart from each other may be electrically connected to each other even without forming the conductive layer 132 thickly. In this case, the conductive layer 132 is electrically connected to the second electrode 130. In addition, the conductive layer 132 may be integrally formed with the second electrode 130.

On the other hand, the thin film transistor Tr electrically connected to each of the organic light emitting diodes E is disposed on the second substrate 200 by the contact member 145.

The second substrate 200 includes sub pixels defined by a plurality of gate lines and data lines that cross each other. That is, the gate line and the data line cross each other to form a plurality of cells, and a sub pixel means one cell of the plurality of cells. The sub-pixels may correspond to the pixels P of the first substrate 100. However, the organic light emitting diode display according to the exemplary embodiment of the present invention is a top emitting type and is not affected by the design by the second substrate 200. However, it is preferable that at least a portion of the sub pixel and the pixel P overlap each other. This is because the thin film transistor Tr and the organic light emitting diode E which are respectively provided in the sub pixel and the pixel P must be electrically connected to each other.

In detail, the thin film transistor Tr is disposed on the second substrate 200. The thin film transistor Tr includes a gate electrode 205, a gate insulating layer 210, a semiconductor layer 215, a source electrode 225, and a drain electrode 235. In this case, the gate electrode 205 is connected to the gate electrode 205. In addition, the source electrode 225 is connected to the data line. As a result, the thin film transistor Tr receives the gate signal from the gate line to turn on the thin film transistor Tr. In this case, the thin film transistor Tr drives the organic light emitting diode E, which will be described later, according to the data signal provided from the data line.

The passivation layer 210 is disposed on the second substrate 200 including the thin film transistor Tr to protect the thin film transistor Tr. In this case, the passivation layer 210 is provided with a contact hole exposing the drain electrode 225 of the thin film transistor Tr.

The contact electrode 245 electrically connected to the drain electrode 225 through the contact hole is disposed on the passivation layer 210. The contact electrode 245 is in contact with the contact member 145 formed on the first substrate 100, and thus, electrically connects the organic light emitting diode E and the thin film transistor Tr to each other.

Therefore, in the exemplary embodiment of the present invention, the organic light emitting diode E and the thin film transistor Tr are formed on the first and second substrates 100 and 200, respectively, and then bonded to each other, thereby improving the process yield.

In addition, since the organic light emitting diode display according to the embodiment of the present invention has to form the second electrode 130 patterned for each pixel on the organic light emitting layer 120, the organic light emitting layer 120 is exposed by an etchant. Could be degraded. However, since the pixel separation barrier 150 is formed on the second electrode 130, the organic light emitting layer may be prevented from being deteriorated because a separate patterning process is not required. Furthermore, since the pixel separation barrier 150 has a cross section of 'T', the second electrode 130 can be reliably patterned for each pixel P, so that the second electrode 130 can be patterned for each pixel P. FIG. It is possible to prevent the short from occurring.

3A to 3J are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device according to a second embodiment of the present invention. The second embodiment is a method for manufacturing the organic light emitting diode display of the first embodiment. Therefore, the second embodiment will be described with reference to FIGS. 3A to 3J and FIG. 2.

Referring to FIG. 3A, a first substrate 100 in which a plurality of pixels P is defined is provided. In this case, each pixel P includes a light emitting part PL and a non-light emitting part PNL.

Here, the first substrate 100 may be made of a transparent material that can transmit light. For example, the first substrate 100 may be a glass substrate, a plastic substrate, a film, or the like.

A lower resistance conductive material is deposited on the first substrate 100 compared with the first electrode 110 to be described later, and then patterned to form the auxiliary electrode 105. For example, the conductive material of the low resistor may be Al, AlNd, Mo, Cr, or the like. As a result, the auxiliary electrode 305 serves to reduce the resistance difference between the first electrode 110 formed in a subsequent process, thereby obtaining uniform picture quality on all screens.

The first electrode 110 is formed on the first substrate 100 including the auxiliary electrode 105. In this case, the first electrode 110 is integrally formed in all the pixels. Here, the first electrode 110 is made of a conductive material that can transmit light. For example, the conductive material may be ITO or IZO.

Referring to FIG. 3B, a buffer layer 115 is formed on the first electrode 110 to expose the emission area PL of the pixel P. Referring to FIG. In order to form the buffer layer 115, an insulating film is first formed on the first electrode 110. Thereafter, the insulating layer is etched to expose the light emitting region PL by a photo process, thereby forming a buffer layer 115.

The insulating film may be formed of a silicon oxide film, a silicon nitride film, or a stacked film thereof. In this case, the insulating layer may be formed by performing chemical vapor deposition (PECVD).

The photo process may include forming a photoresist pattern with a portion of the photoresist formed on the insulating layer, etching the insulating layer using the photoresist pattern as an etching mask, and removing the photoresist pattern. .

In addition, an insulating pattern 117 disposed in the pixel P may be further formed in the etching of the insulating layer in the photo process. The insulating pattern 117 is a region for forming the protrusion member to be described later. In this case, the insulating pattern 117 has a 'island' shape in the pixel P. FIG.

Referring to FIG. 3C, after the buffer layer 115 is formed, the first positive photosensitive resin film 152a and the first negative photosensitive resin film 151a are formed on the first substrate 100 including the buffer layer 115. Form sequentially.

The first positive photosensitive resin film 152a and the first negative photosensitive resin film 151a include photosensitive materials having different characteristics with respect to light. In the first positive photosensitive resin film 152a, the photosensitive material in the non-photosensitive region is less soluble in the developing solution than in the photosensitive region. On the other hand, in the first negative photosensitive resin film 151a, the photosensitive material in the non-photosensitive region has higher solubility in the developing solution than in the photosensitive region. That is, the first positive photosensitive resin film 152a has a property of removing the photosensitive material of the photosensitive region in the developing process, and the first negative photosensitive resin film 152b has the photosensitive material of the non-photosensitive region removed in the developing process. Has the property of

In this case, the first positive photosensitive resin film 152a and the first negative photosensitive resin film 151a may be formed on the first substrate 100 by a wet process, respectively. Examples of wet processes include spin coating, dip coating, spray coating, inkjet printing, and the like.

Referring to FIG. 3D, after the first positive photosensitive resin film 152a and the first negative photosensitive resin film 151a are formed, the first positive photosensitive resin film 152a and the first negative photosensitive resin film 151a are formed. The exposure process is performed to form the second positive photosensitive resin film 152b and the second negative photosensitive resin film 151b which differ in solubility in the developer partly.

In order to perform the exposure process, a mask M is provided on the first substrate 100 including the first negative photosensitive resin film 151a. The mask M includes a transmissive portion O through which light is transmitted and a non-transparent portion C disposed around the transmissive portion O and not transmitting light. The first negative photosensitive resin film 151a and the first positive photosensitive resin film 152a are defined as a first region 153 corresponding to the transmission portion O and a second region 154 corresponding to the non-transmissive portion O. do.

Subsequently, when the light is irradiated onto the mask M, the light passes through the transmission portion O of the mask M to form the first negative photosensitive resin film 151a and the first positive photosensitive resin film 152a. As the first region 153 is provided, the second positive photosensitive resin film 152b and the second negative photosensitive resin film 151b having different solubility in the developer are formed.

Therefore, in the second negative photosensitive resin film 151b, the solubility of the photosensitive material in the second region 153 in the developer is lower than that in the first region 153. On the other hand, in the predetermined region 153 of the second positive photosensitive resin film 152b, the solubility of the photosensitive material in the second region 153 in the developer is greater than that of the first region 153.

Referring to FIG. 3E, after the exposure process is performed, a developing process is performed on the first substrate 100 including the second positive photosensitive resin film 152b and the second negative photosensitive resin film 151b.

Here, the second region 154 of the second negative photosensitive resin film 152b is dissolved and removed with the developing solution D. As shown in FIG. 3F, the head 151 of the pixel separation partition 150 is formed. Is formed. At this time, the developing solution D dissolves the second region 154 of the second negative photosensitive resin film 152b while the first region 153 and the second region 154 of the second positive photosensitive resin film 152b. Penetrates into the boundary 155. At this time, the developing solution D penetrated into the boundary 155 dissolves and removes the second positive photosensitive resin film 151b provided in the first region 153 from the outer side to the inner side to a predetermined portion to separate the pixel separation partition wall ( The leg 152 of the 150 is formed.

In this case, the area of the head portion 151 is larger than the leg portion 152 in the pixel separation barrier 150, so that the cross section of the pixel separation barrier 150 has a 'T' shape.

Here, when the order of the first positive photosensitive resin film 152a and the first negative photosensitive resin film 151a is changed on the first substrate 100, the 'T' shape pixel separation partition wall is not formed. Do not.

Referring to FIG. 3G, after forming the pixel separation barrier 150, the second positive photosensitive resin film 152b of the second region 154 is peeled off. That is, the second positive photosensitive resin film 152b of the second region 154 is dissolved and removed by the strip solution.

As a result, a pixel separation barrier 150 for naturally patterning the second electrode 130 to be described later is formed on the first substrate 100. Here, the pixel separation barrier 150 is disposed at a boundary between each pixel P. That is, the pixel separation barrier 150 substantially defines each pixel P. FIG.

Referring to FIG. 3H, after forming the pixel isolation barrier 150, the protrusion member 119 is formed on the insulating pattern 117.

In order to form the protruding member 119, a photosensitive resin is coated on the first substrate 100 including the insulating pattern 117. Thereafter, the protruding member 119 may be formed on the photosensitive resin through exposure and development processes. At this time, the projection member 119 has a column shape protruding upward.

Here, the protrusion member 119 is described as being formed after the step of forming the pixel separation barrier 150, but is not limited thereto. That is, the protrusion member 119 may be formed before the forming of the pixel separation barrier 150.

Referring to FIG. 3I, after the protrusion member 119 is formed, the organic light emitting layer 120 is formed on at least the light emitting region of the pixel P. Referring to FIG. That is, the organic light emitting layer 120 is formed on the first electrode 120 exposed by the buffer layer 115. The organic light emitting layer 120 may be a low molecular material or a high molecular material. In this case, as an example of a method of forming the organic light emitting layer 120, when the organic light emitting layer 120 is a low molecular material, it may be formed by performing a vacuum deposition method. On the other hand, in the case of a polymer material, it may be formed by performing an inkjet printing method.

In addition, a hole injection layer, a hole transport layer, a hole suppression layer, an electron transport layer, an electron injection layer, or the like may be further formed before or after the organic emission layer 120 is formed.

After the organic light emitting layer 120 is formed, at least a second electrode 130 disposed on the organic light emitting layer 120 is formed.

In order to form the second electrode 130, first, a conductive material is vacuum deposited on the first substrate 100 including the pixel isolation barrier 150 and the organic light emitting layer 120. Here, since the pixel isolation barrier 150 has a 'T' shape, a conductive material is deposited on the first substrate 100 including the pixel isolation barrier 150 to naturally pattern the pixel P. 2 electrodes 130 are formed. That is, the second electrode 130 may be formed without performing a separate patterning process. Here, the separate patterning process may be a patterning process using the photosensitive resin as described above. The developer used in the patterning process may cause deterioration of the organic light emitting layer 120 positioned below the second electrode 130.

In the process of forming the second electrode 130, a conductive film 132 covering the protrusion member 119 is formed. That is, the conductive film 132 is formed integrally with the second electrode 130.

As a result, the organic light emitting diode E having the first electrode 110, the organic light emitting layer 120, and the second electrode 130 is formed on the first substrate 100. In addition, a contact member 145 is formed on the first substrate 100 to electrically connect the organic light emitting diode E and the thin film transistor Tr spaced apart from each other. The contact member 145 may include an insulating pattern 117, a protrusion member 119, and a conductive layer 132.

Referring to FIG. 3J, a second substrate 200 on which a thin film transistor Tr is formed is provided.

Here, in order to form a thin film transistor on the second substrate 200, first, the second substrate 200 is provided. The second substrate 200 may be made of plastic, glass, or metal. The gate electrode 205 is formed on the second substrate 200, and the gate insulating layer 210 is formed on the second substrate 200 including the gate electrode 205. The gate insulating layer 210 may be made of silicon oxide or silicon nitride. In this case, the gate insulating layer 210 may be formed by depositing by performing a chemical vapor deposition method.

The semiconductor layer 215 is formed on the gate insulating layer 210 corresponding to the gate electrode 205. Here, the semiconductor layer 215 is formed by sequentially stacking and patterning an amorphous silicon film and an amorphous silicon film doped with P-type or N-type impurities.

The conductive metal is deposited on the semiconductor layer 215 and then patterned to form source / drain electrodes 235 and 225 spaced apart from each other on the semiconductor layer 215.

As a result, the thin film transistor Tr including the gate electrode 205, the semiconductor layer 215, and the source / drain electrodes 235 and 225 may be formed on the second substrate 200. Herein, the drawing is limited to forming one thin film transistor on the second substrate 200. However, at least one thin film transistor and a capacitor for switching the thin film transistor on the second substrate 200 may be further formed. Can be.

In addition, the thin film transistor Tr has been described as being limited to forming a bottom gate thin film transistor using amorphous silicon. However, the thin film transistor Tr is not limited thereto and may employ various known thin film transistors.

The passivation layer 220 is formed over the entire surface of the second substrate 200 including the thin film transistor Tr. The protective film 220 may be formed of silicon nitride or silicon oxide, and may be formed by performing chemical vapor deposition. A contact hole for exposing the drain electrode 225 is formed in the passivation layer 220. In addition, a contact electrode 245 may be further formed on the passivation layer 220 to be in electrical contact with the drain electrode 225 exposed to the contact hole. The contact electrode 245 serves to improve the contact stability of the contact member 145 described above.

After providing the second substrate 200 on which the thin film transistor Tr is formed, a seal pattern is formed on the outer side of the first substrate 100 or the second substrate 200. Thereafter, the first substrate 100 and the second substrate 200 are bonded to each other such that the contact member 145 of the first substrate 100 and the contact electrode 245 of the second substrate 200 are in electrical contact with each other. As shown in FIG. 2, an organic light emitting diode display device may be manufactured. At this time, the organic light emitting diode E and the thin film transistor Tr formed on the first and second substrates 100 and 200 spaced apart from each other are electrically connected to each other by electrical contact between the contact member 145 and the contact electrode 245. Is connected.

Therefore, in the organic light emitting diode display according to the embodiment of the present invention, the organic light emitting diode and the thin film transistor are formed on different first and second substrates, respectively, thereby improving process yield and lowering the unit cost.

In addition, by using a positive photosensitive resin and a negative photosensitive resin having different characteristics with respect to light on the first substrate on which the organic light emitting diode is formed, it has an ideal 'T' shape for naturally separating the second electrode 130. The pixel separation barrier 150 may be formed. As a result, the second electrode 130 may prevent degradation of the organic light emitting layer 120 and may be naturally patterned for each pixel P, thereby improving the lifespan of the completed organic light emitting diode display device.

As described above, the organic light emitting diode display device of the present invention forms a thin film transistor and an organic light emitting diode on different substrates, and then combines the two substrates to manufacture the organic light emitting diode display device, thereby reducing the defect rate and producing the organic light emitting diode display device. An improvement in yield can be expected.

In addition, by forming a pixel separation barrier having an ideal structure for naturally patterning the second electrode using a negative photosensitive resin and a positive photosensitive resin having different characteristics for light, the second electrode is reliably separated from pixel to pixel. This can prevent short defects between pixels.

In addition, since the second electrode can be automatically separated for each pixel without a separate patterning process, deterioration of the organic light emitting layer can be prevented, and thus, the life of the organic light emitting diode display can be improved.

Although described above with reference to embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the invention described in the claims below. I can understand that.

Claims (10)

A first substrate having a plurality of pixels; A first electrode disposed on a first substrate including the plurality of pixels; A pixel separation partition wall disposed along the periphery of each pixel; An organic light emitting layer disposed on the first electrode; A second electrode disposed on the organic light emitting layer and separated for each pixel by the pixel separation barrier; And A second substrate facing the first substrate and having a thin film transistor electrically connected to the second electrode; And the pixel isolation barrier wall includes a leg portion having a first area and a head portion disposed on the leg portion and having a second area larger than the first area. The method of claim 1, And the pixel isolation partition wall has a cross-sectional shape of 'T'. The method of claim 1, And the leg portion is made of a positive photosensitive resin. The method of claim 1, And the head portion is made of a negative photosensitive resin. The method of claim 1, And a buffer layer interposed between the first electrode and the pixel isolation partition wall and exposing a light emitting area provided in each pixel. Providing a first substrate on which a plurality of pixels are defined; Forming a first electrode on a first substrate including the plurality of pixels; Forming a pixel isolation barrier along the periphery of each pixel; Forming an organic light emitting layer on the first electrode; Forming a second electrode naturally patterned by the pixel separation barrier on the organic light emitting layer; And Bonding the second substrate on which the thin film transistor is electrically connected to the first substrate and the second electrode; And the pixel isolation partition wall includes a leg portion having a first area and a head portion disposed on the leg portion and having a second area larger than the first area. The method of claim 6, Between the forming of the first electrode and the forming of the pixel isolation barrier, And forming a buffer layer on the first electrode while exposing the emission region of each pixel. The method of claim 7, wherein Forming the pixel separation partition wall, Forming a first photosensitive resin film on a first electrode including the buffer layer; Forming a second photosensitive resin film on the first photosensitive resin film; Exposing a first substrate including the second photosensitive resin film; Developing the second photosensitive resin film to form the head; And And forming the legs by stripping the first photosensitive resin film. The method of claim 8, And said first photosensitive resin film is positive type and said second photosensitive resin film is negative type. The method of claim 6, The pixel separation barrier is formed to have a cross-sectional shape of the 'T' manufacturing method of an organic light emitting diode display device.

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