KR20090019207A - Organic electroluminescent device including t shape separator and method of fabricating the same - Google Patents

Abstract

An organic electroluminescent device including a T shaped separator and a manufacturing method thereof are provided to increase yield by separating an organic light emitting layer and an electrode through a separator regardless of the error of the characteristic of an exposing device. A first substrate(111) and a second substrates(151) are arranged to face each other. An array device(113) is formed in each pixel region on the first substrate. A first electrode(155) is formed in the front of the inner surface of the second substrate. A separator(160) includes a first pattern(160a) with a first width in each boundary region in the bottom of the first electrode and as second pattern(160b) with a second width larger than the first width and has a T shape section based on the first electrode. An organic light emitting layer(162) is formed in the bottom of the first electrode of each pixel region. The second electrode(165) are separately formed in each pixel region.

Description

T-shaped bulkhead, organic electroluminescent device including the same, and method for manufacturing the same {Organic electroluminescent device including T shape separator and method of fabricating the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly, to a partition wall having a T-shaped cross-sectional structure, an organic electroluminescent device including the same, and a manufacturing method thereof.

One of the new flat panel display devices (FPDs), the organic light emitting display device is self-luminous, so it has better viewing angle, contrast, etc. than the liquid crystal display device, and it is light and thin because no backlight is required. It is also advantageous from the side. In addition, since it is possible to drive DC low voltage, fast response speed, and all solid, it is strong against external shock, wide use temperature range, and especially inexpensive in terms of manufacturing cost.

The basic structure and operation characteristics of the active matrix organic light emitting display device will be described with reference to the drawings.

1 is a view showing a basic pixel structure of a general active matrix organic electroluminescent device.

As illustrated, the gate lines GL are formed in a first direction, spaced apart from each other in a second direction crossing the first direction, and spaced apart from each other, the data line DL and the power supply line PL. Is formed, and the gate and data lines GL and DL, which cross each other, define one pixel region P.

A switching thin film transistor STr, which is an addressing element, is formed at an intersection point of the gate line GL and the data line DL, and is connected to the switching thin film transistor STr and the power supply line PL. As a result, a storage capacitor StgC is formed. In addition, a driving thin film transistor DTr, which is connected to the storage capacitor StgC and the power supply line PL, is formed as a current source element, and is connected to the driving thin film transistor DTr. Electroluminescent Diode (ED).

On the other hand, when the organic light emitting diode (ED) is supplied with a current to the organic light emitting material in the forward direction, P (positive) -N (negative) between the anode electrode (hole supply layer) and the cathode electrode (cathode electrode) electron supply layer Since the electrons and holes are recombined with each other through the junction, they have less energy than when the electrons and holes are separated, and thus, the principle of emitting light due to the difference in energy generated at this time is used.

Recently, an active matrix type organic light emitting display device having such a configuration forms an array device including driving and switching thin film transistors (STr and DTr) on a first substrate in order to improve a yield of a product, and an organic light emitting diode (ED). ) Is manufactured in a dual panel type for forming a second substrate. In the case where both the array element and the organic light emitting diode (ED) are formed on one substrate, if the defect occurs in manufacturing either the array element or the organic light emitting diode, the defect is processed and formed in the dual panel type. This is because it is possible to manufacture a replacement by replacing the substrate with a good substrate by only treating the substrate containing only the element or diode that has a defect, it is because there is an effect to reduce the defect and further reduce the material cost.

2 is a cross-sectional view of a general dual panel type organic light emitting display device.

As illustrated, the first and second substrates 11 and 51 are disposed to be spaced apart from each other by a predetermined distance, and a plurality of driving and switching thin film transistors (for each pixel region P) are disposed on the inner surface of the first substrate 11. An array element 13 is formed, which is connected to one electrode of the driving thin film transistor (not shown) in the array element 13, and a connection electrode 17 is formed.

In addition, a first electrode 55 is formed on an entire surface of an inner surface of the second substrate 51 facing the first substrate 11, and a pixel area P is disposed below the first electrode 55. The buffer pattern 57 and the reverse tapered partition wall 60 are sequentially stacked on the boundary CA. The partition wall 60 and the partition wall 60 are separated by the reverse tapered partition wall 60 without a separate patterning process. The organic light emitting layer 62 and the second electrode 65 are sequentially formed below the first electrode 55 in a region between the pixels. In this case, the first and second electrodes 55 and 65 and the organic light emitting layer 62 positioned between the two electrodes form an organic light emitting diode (ED).

In addition, an electrical connection pattern 30 is formed for each pixel region P, so that the second electrode 65 and the array element 13 of the first substrate 11 below the second substrate 51 are formed. The same contact with the connected electrode 17 is electrically connected.

Although not shown in the drawings, edges of the first and second substrates 11 and 51 are sealed by a seal pattern (not shown), and the inner regions of the first and second substrates 11 and 51 may be filled with moisture. And sealed in a state of inert gas or vacuum so as not to be exposed to the atmosphere.

In manufacturing the dual panel type organic electroluminescent device 1 having the above-described structure, in particular, in manufacturing the second substrate 51 having the partition 60, the organic light emitting layer 62, and the second electrode 65 formed thereon. Most importantly, the organic emission layer 62 and the second electrode 65 should be formed independently for each pixel region P. Referring to FIG.

In order to have the organic light emitting layer 62 and the second electrode 65 separated in each pixel region P, the second substrate 51 has an inverse taper structure, that is, the inside of the second substrate 51. Each pixel has an inverse taper structure in which the cross-sectional area of the side adjacent to the inner side with respect to the side surface decreases, and the cross-sectional area increases as the distance from the inner side increases, and forms a predetermined angle θ with respect to the second substrate 51. A partition 60 formed of an organic insulating material is formed around the region P.

By evaporating the organic light emitting material on the second substrate 51 having the partition wall 60 having the reverse taper structure, each pixel region is automatically formed by the partition wall 60 of the reverse taper structure. After forming the organic light emitting layer 62 separated by (P), a metal material is deposited to form an independent second electrode 65 for each pixel region (P).

The method of forming the partition wall 60 having the inverse taper shape described above will be briefly described. A photoresist, which is a transparent photosensitive material, is formed on the second substrate 51 on which the first electrode 55 and the buffer pattern 57 are formed. Is applied to the entire surface to form a photoresist layer (not shown), and an exposure mask (not shown) having a transmissive region and a blocking region is positioned in a region where the transmissive region is to form a partition, and then the exposure mask (not illustrated). Exposure to the photoresist layer (not shown) is performed through. In this case, the exposure dose is sufficiently high for a long time or per unit time so that a material reacting to the light inside the photoresist layer at the portion to which the light is irradiated causes a complete reaction with respect to the entire thickness of the photoresist layer (not shown). Is carried out.

Next, the exposed photoresist layer (not shown) is exposed to the developer for a suitable time to remove the unexposed portions, and the baking process is continuously performed on the remaining photoresist layer to be cured by curing the second substrate 51. A partition having an inverse taper shape is formed with respect to the inner side of the back side).

However, through the conventional method of manufacturing the partition wall, the partition wall 60 having a sidewall inclined at a predetermined angle θ with respect to the inner surface of the second substrate 51 is formed. There is a disadvantage that is difficult to form.

 The formation of the partition wall 60 having the reverse taper structure is influenced by the focusing position, the exposure amount, the developing time and the baking temperature of the exposure apparatus at the time of exposure, and the error is very seriously caused by the focusing position and the exposure amount of the exposure apparatus. I'm doing it.

The role of the partition wall 60 is to separate the organic light emitting layer 62 and the second electrode 65 for each pixel region P. An angle formed between the inner surface of the second substrate 51 and the side surface of the partition wall 60 ( The smaller the θ), the better separation of each pixel region P of the organic light emitting layer 62 occurs. In particular, the angle θ formed between the side surface of the partition 60 and the inner surface of the second substrate 51 is increased. About 40 degrees-55 degrees are becoming a preferable level.

However, since the error is severe for each exposure apparatus, even if the exposure is performed using an exposure apparatus having the same focusing position and exposure amount, the development and baking are performed under the same conditions to form the inverted taper-shaped partition wall 60. An angle θ formed at a side surface of the second substrate 51 with an inner surface of the second substrate 51 has a large error range of about 30 degrees to about 75 degrees, and a partition wall having an angle θ of greater than 55 degrees is formed. In the formed portion, separation of the organic light emitting layer 62 and the second electrode 65 by the pixel region P is not performed, thereby increasing the defective rate.

In addition, a situation in which manufacturing costs are increased due to material costs due to trial and error caused by different process conditions for each exposure apparatus.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and in the present invention, an organic electric field is provided by providing a barrier rib having a structure in which separation between pixel regions of an organic light emitting layer and an electrode is surely performed regardless of an error of an exposure device characteristic. The purpose of the present invention is to improve productivity by improving the yield of the light emitting device and to reduce manufacturing costs, and further to contribute to process stability by minimizing the influence of device-specific characteristics.

An organic light emitting display device according to the present invention includes a pixel area, a boundary area between the pixel areas defined around the pixel area, and disposed to face each other at a predetermined distance from each other; An array element formed in each pixel region on the first substrate; A first electrode formed on an entire surface of the inner surface of the second substrate; The first electrode includes a first pattern having a first width in each boundary region below the first electrode, and a second pattern formed below the first pattern and having a second width greater than the first width. A partition wall having a cross-sectional structure having a “T” shape as a reference; An organic emission layer separated by each of the pixel regions by the barrier rib and formed under the first electrode in each pixel region; A second electrode formed below the organic light emitting layer for each pixel region; The array element may be electrically connected to the second electrode, and may include an electrical connection pattern formed independently for each pixel region.

The thickness of the second pattern is 1/3 to 1/2 of the total thickness of the partition wall, and has a third width greater than the second width between the partition wall and the first electrode corresponding to the boundary area. The buffer pattern is further formed.

A connection electrode for connecting the array element and the electrical connection pattern is further formed on the first substrate, and an auxiliary electrode having a wiring shape is further formed between the second substrate and the first electrode corresponding to the boundary region. It is characteristic.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, the method including: forming a first electrode on a front surface of a pixel region and a first substrate surrounding the pixel region and defining a boundary region between the pixel regions; T based on the first electrode including a first pattern having a first width in each boundary region above the first electrode and a second pattern having a second width greater than the first width above the first pattern; Forming a partition wall having a cross-sectional structure in the shape of a child; Forming an organic emission layer on the first electrode, the organic emission layer being automatically separated for each pixel region by a partition wall; Forming a second electrode on the organic emission layer, the second electrode being separated by each of the pixel regions by the partition wall; Forming an array element in each pixel region of an inner surface of a second substrate facing the first substrate; Electrically connecting the array element and the second electrode and forming an electrical connection pattern formed on each of the pixel regions on the first or second substrate; Bonding the first and second substrates such that the electrical connection pattern contacts the array element and the second electrode simultaneously.

The forming of the partition wall may include forming a photoresist layer having a first thickness on a front surface of the first electrode; A first exposure such that the photoresist layer corresponding to a thickness of 1/3 to 1/2 of the first thickness with respect to the photoresist layer is reacted with light through a first exposure mask including the second width-transmissive portion; Performing a step; A second exposure is applied to the first exposed photoresist layer such that the photoresist layer of the first thickness corresponding to the transmission part is all irradiated through a second exposure mask including the transmission part of the first width. Performing; Developing the second exposed photoresist layer; And curing the photoresist layer that is developed to remain on the first electrode.

The method may further include forming a buffer pattern having a third width greater than the second width with respect to the boundary region before the forming of the barrier rib.

An element according to the present invention includes a substrate; A barrier rib having a first pattern having a first width on the substrate and a second pattern having a second width larger than the first width on the first pattern and having a T-shaped cross-sectional structure with respect to the substrate and; It comprises a material layer characterized in that automatically separated by the partition.

A method of forming a partition wall according to the present invention includes the steps of forming a photoresist layer having a first thickness on the entire surface of the substrate; A first exposure is performed such that the photoresist layer corresponding to a thickness of 1/3 to 1/2 of the first thickness with respect to the photoresist layer is reacted with light through a first exposure mask comprising a first width-transmissive portion. Performing; The photoresist layer of the first thickness corresponding to the transmissive portion is all reacted to the irradiated light through a second exposure mask including a transmissive portion having a second width smaller than the first width with respect to the first exposed photoresist layer. Performing a second exposure to effect; Developing the second exposed photoresist layer; And curing the photoresist layer that is developed to remain on the substrate.

The organic light emitting device having a partition having a T-shaped cross-sectional structure according to the present invention has the effect of improving the yield since the organic light emitting layer and the electrode can be completely separated between each pixel region by the shape of the partition.

In addition, the partition wall having the T-shaped cross-sectional structure does not include an element that is rapidly changed by the individual characteristics of the exposure apparatus in the forming step, and thus the process progresses such as separately managing the exposure conditions according to the characteristics of the exposure apparatus. Since it is not necessary, there is an effect of securing a stable process and improving productivity.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

The most characteristic part of the organic light emitting device according to the present invention is in the structure of the partition wall. The partition wall proposed in the present invention has a T-shaped or mushroom-shaped cross-sectional structure with respect to the surface of the substrate.

In the case of the partition wall having such a T-shaped or mushroom-shaped cross-sectional structure with respect to the substrate surface, the organic light emitting layer and the electrode can be formed to be completely separated for each pixel area, and the composition does not have a large error range according to the characteristics of the exposure apparatus. As a result, it is possible to reduce the extraneous factors required separately, such as separately managing the process conditions for each device characteristics can contribute to process stabilization.

3 is a cross-sectional view of a portion of a dual panel type organic light emitting display device according to an exemplary embodiment of the present invention. In this case, for convenience of description, the area surrounding the pixel area P in which the organic emission layer is formed and the partition wall is defined as a boundary area CA.

As illustrated, the dual panel type organic light emitting diode 101 according to the present invention includes a first substrate 111 having an array element 113 and a second substrate 151 having an organic light emitting diode ED. An electrical connection pattern 130 electrically connecting the array element 113 and the organic light emitting diode ED to each pixel region P between the two substrates 111 and 151. It is provided.

Although not shown, a seal pattern is formed along edges of the first and second substrates 111 and 151 to seal the two substrates 111 and 151 and maintain the panel state.

In more detail, the structures of the first substrate and the second substrate will be described.

First, the structure of the upper second substrate 151 on which the organic light emitting diode ED having the features of the present invention is formed will be described.

On the inner surface of the second substrate 151 on which the organic light emitting diode (ED) is formed, the first electrode 155 is formed on the front surface of indium tin oxide (ITO), a transparent conductive material having a relatively high work function. A buffer pattern 157 made of an inorganic insulating material and having a first width w1 is formed at the boundary CA between the pixel regions P under the first electrode 155, and the buffer pattern 157 is formed. The first pattern 160a and the first pattern 160 having a second width w2 perpendicular to the inner surface with respect to the inner surface of the second substrate 151 and smaller than the first width w1. The second pattern 160b having a third width w3 below and parallel to an inner surface of the second substrate 151 and larger than the second width w2 and smaller than the first width w1. A partition wall 160 having a T-shaped or mushroom-shaped cross section (hereinafter referred to as “T” shape) is formed.

In the case of the partition wall 160 having a “T” shaped cross-sectional structure, the side surface of the first pattern 160a and the bottom surface of the second pattern 160b (the surface facing the inner surface of the second substrate 151) ) Is always maintained in a vertical state, and the bottom surface of the second pattern 160b is formed so that the organic light emitting material cannot be adhered to the bottom surface of the second pattern 160b through evaporation or coating. The organic emission layer 162 may not be connected between the pixel regions P, and an angle, etc., with respect to the inner surface of the second substrate 151 on the side surface of the barrier rib 160 may be adjusted through factors of a specific manufacturing process. Since there is no need to do so, it is not necessary to take into account the process instability factor which depends on the error range of the focusing and the exposure amount according to the characteristics of each exposure apparatus. The manufacturing method of the partition which has such a structure is demonstrated in detail later through a manufacturing method.

On the other hand, an organic emission layer 162 separated for each pixel region P is formed under the first electrode 155 in each pixel region P surrounded by the T-shaped partition wall 160. In this case, the organic light emitting layer is sequentially repeated for each pixel region P, and includes a light emitting material corresponding to red, green, and blue, or is composed of a single color light emitting material. In addition, although the organic light emitting layer is shown in a single layer structure in order to maximize the light emission efficiency, a hole injection layer, a hole transporting layer, a hole transporting layer, an emitting material layer, an electron transporting layer ) And an electron injection layer.

In addition, a second electrode 165 separated for each pixel area P is formed under each organic emission layer 162. In this case, the first electrode 155, the organic emission layer 162, and the second electrode 165 form an organic light emitting diode (ED).

The second substrate 151 on which the organic light emitting diode ED having the above-described structure is formed is formed by the partition wall 160 having a T-shaped cross-sectional structure formed at the boundary CA of each pixel region P. The organic emission layer 162 and the second electrode 165 are completely separated for each region P. Therefore, as each of the pixel regions of the organic light emitting layer and the second electrode is not separated by a large and small deviation of the angle formed between the side surface of the partition wall and the inner surface of the second substrate as in the case of forming the partition wall of the conventional reverse taper structure. Defects will not occur.

Although not shown in the drawings, between the inner surface of the second substrate 151 and the first electrode 155 formed on the front surface, a low-resistance metal material, for example, aluminum (Al) or aluminum, corresponds to the partition wall 160. Auxiliary electrode (not shown) is a metal material selected from one of alloy (AlNd), copper (Cu), copper alloy, gold (Au), silver (Ag), chromium (Cr), and molybdenum (Mo). Can be formed. This is because the first electrode 155 formed of the transparent conductive material on the front surface has a lower resistance characteristic than the above-described low resistance metal material, so as to form a uniform voltage on the front surface in the form of a wiring.

Next, the structure of the first substrate 111 including the lower array element 113 facing the second substrate 151 will be briefly described.

An array element 113 including a plurality of driving and switching thin film transistors (not shown) is formed for each pixel region P on an inner surface of the first substrate 111, and among the array elements 113, The connection electrode 117 is connected to the driving thin film transistor (not shown).

In addition, an upper portion of the connection electrode 117 in each pixel region P is in contact with the connection electrode 117 and at the same time in contact with the second electrode 165 of the second substrate 151 to form an electrical connection pattern 130. ) Is formed.

Although not shown in the drawing, gate and data wires crossing each other corresponding to the boundary CA between the pixel regions P and power supply wires are arranged on the first substrate 111 in parallel with the data wires. Formed.

Hereinafter, a method of manufacturing a dual panel type organic light emitting display device having the above structure will be described with reference to the accompanying drawings. At this time, the present invention is characterized in that the second substrate on which the organic light emitting diode is formed, the method of manufacturing the second substrate will be described in detail.

4A to 4E are cross-sectional views of steps in manufacturing a substrate on which an organic light emitting diode of an organic light emitting diode of a dual panel type according to the present invention is formed. At this time, only one pixel region P is shown.

First, as shown in FIG. 4A, an indium tin oxide (ITO), which is a transparent conductive material on a transparent insulating substrate 151 and is one of materials having a higher work function than other metals, is deposited on the front surface. The first electrode 155 is formed in the.

At this time, although not shown in the drawing, before forming the first electrode 155, a metal material having low resistance on the substrate 151, for example, aluminum (Al), aluminum alloy (AlNd), copper (Cu) , Copper alloy, gold (Au), silver (Ag), chromium (Cr), molybdenum (Mo) is deposited on the entire surface, a series of unit processes, such as coating a photoresist, exposure using an exposure mask, development and etching The auxiliary electrode in the form of a wiring may be further formed in the boundary area CA by patterning by performing a mask process including a.

Next, silicon nitride (SiNx) or silicon oxide (SiO ₂ ), which is an inorganic insulating material, is deposited on the entire surface of the first electrode 155 to form an insulating layer (not shown), and a mask process is performed to pattern the same. A buffer pattern 157 having a first grid width w1 having a lattice shape surrounding the pixel areas P is formed in the boundary area CA.

Next, as shown in FIG. 4B, an organic material having a negative type characteristic, for example, a negative type photo, in which a lighted portion remains on the substrate 111 on which the buffer pattern 157 is formed, is developed. The resist is applied to form a photoresist layer 159 having a first thickness t1 of about 1 μm to 2 μm, followed by soft baking to dry.

Thereafter, the transmissive part TA having a third width w3 smaller than the first width w1 corresponding to the boundary area CA on the dried photoresist layer 159 and the other area is a blocking part BA. The first exposure mask 191 is configured to position the first exposure mask. At this time, the exposure amount during the first exposure reacts with light irradiated with only about 1/3 to 1/2 of the first thickness t1, which is the total thickness of the photoresist layer 159, from the surface thereof to generate crosslinking. Do it.

Next, as shown in FIG. 4C, after the first exposure mask (191 of FIG. 4B) is removed, the boundary between the pixel regions P over the photoresist layer 159 subjected to the first exposure in succession ( Corresponding to CA), the second exposure mask 193 having the transmissive portion TA having a second width w2 smaller than the third width w3 and having a blocking portion BA is positioned, and The portion irradiated with light corresponding to the transmissive portion TA fully reacts with the irradiated light with respect to the first thickness t1, which is the total thickness of the photoresist layer 159, so that the second exposure is performed so that all crosslinking occurs. Conduct.

Next, as shown in FIG. 4D, the photoresist layer 159 of FIG. 4C subjected to the second exposure is exposed to a developing solution, thereby forming a photoresist corresponding to an area where no crosslinking has occurred, that is, a pixel region P. As shown in FIG. By removing the layer 159 of FIG. 4C, the first pattern 160a having a shape perpendicular to one surface of the substrate 151 and the second pattern 160b having a shape parallel to one surface of the substrate 151 are removed. It is configured to form a partition wall 160 having a T-shape and a planar grid form.

This is equal to 1 of the first thickness (t1 in FIG. 4C) of the photoresist layer (159 in FIG. 4C) in the portion having the third width w3 by the first exposure, that is, in the portion forming the second pattern 160b. Only a thickness t2 of about 3 to 1/2 is reacted with light to cause crosslinking, and in the portion having the second width w2, that is, the portion forming the first pattern 160a, the first thickness ( Since crosslinking is generated by reacting with light corresponding to the entirety of t1 of FIG. 4C, a second pattern 160b having a third width w3 and a second width w2 below it are shown. The partition wall 160 having a T-shaped cross-sectional structure composed of one pattern 160a is formed.

Thereafter, a hard baking process is performed to completely cure the partition wall 160 having the T-shaped cross-sectional structure.

In the case of the partition wall formation process as described above, even if there is a difference in focusing or exposure amount due to the characteristics of the exposure apparatus, the element such as an angle, such as an angle formed with the substrate surface of the side surface, which is suddenly changed by such an element, may be used. Since the partition wall does not need to be formed, that is, the partition wall does not form a reverse tapered shape, the formation of the reverse tapered shape is not related to a poor separation of the organic light emitting layer to be formed later. The anxiety factor of stability is characterized by being completely preventable.

Next, as illustrated in FIG. 4E, the “T” shape is formed by evaporating or coating an organic light emitting material on the substrate 151 on which the partition wall 160 having the T shape cross section structure is formed. An organic emission layer 162 that is automatically separated for each pixel region P by the partition wall 160 is formed on the first electrode 155 in each pixel region P. Referring to FIG.

Next, a metal material having a low work function, for example, aluminum (Al) or aluminum alloy (AlNd), is deposited on the entire surface of the substrate 151 on which the organic light emitting layer 162 is formed. A second electrode 165 having a shape separated by each pixel region P is formed by the partition wall 160 having a T-shaped cross-sectional structure.

3, the first substrate 111 including the array element 113 as a metal material is formed on the second electrode 165 independently formed for each pixel region P. As shown in FIG. An electrical connection pattern 130 for connecting may be further formed. In this case, the electrical connection pattern 130 may be formed on the first substrate 111 provided with the array element 113.

Array element 113 composed of a second substrate 151 of the organic light emitting device 101 manufactured as described above, and a plurality of driving and switching thin film transistors (not shown) for each pixel region P by a general method. ) Forms a seal pattern (not shown) along the magnetic field of the first and second substrates 111 and 151, and the first substrate 111 or the second substrate 151. The electrical connection pattern 130 provided on the second substrate 151 is connected to the second electrode 165 of the second substrate 151 and the driving thin film transistor (not shown) in the array element 113 of the first substrate 111. After contacting the connecting electrode 117, the two panels 111 and 115 are bonded together in an atmosphere of vacuum or inert gas to complete the dual panel type organic electroluminescent device 101 according to the present invention.

Meanwhile, in the embodiment of the present invention, the dual panel type organic electroluminescent device is shown as an example, but the partition having a T-shaped cross-sectional structure and a method of forming the same are not limited to the above-described embodiment, and are specified between pixel regions. Obviously, it can be widely used in the manufacture of substrates for devices using automatic separation of material layers.

1 is a view showing a basic pixel structure of a general active matrix organic electroluminescent device.

Figure 2 is a cross-sectional view of a conventional dual panel type organic electroluminescent device.

3 is a cross-sectional view of a dual panel type organic electroluminescent device according to the present invention.

4A to 4E are cross-sectional views illustrating manufacturing steps of a substrate on which an organic light emitting diode for an organic light emitting diode of a dual panel type according to the present invention is formed;

<Explanation of symbols for main parts of the drawings>

101 organic light emitting device 111 first substrate

113 array element 117 connecting electrode

130: electrical connection pattern 151: second substrate

155: first electrode 157: buffer pattern

160: bulkhead 160a, 160b: first and second patterns

162: organic light emitting layer 165: second electrode

CA: boundary between pixel areas ED: organic light emitting diode

P: pixel area t2: second thickness (of the second pattern)

w1, w2, w3: 1st, 2nd, 3rd width

Claims (10)

First and second substrates each having a pixel area and a boundary area between the pixel areas defined around the pixel area and disposed to face each other at a predetermined distance from each other; An array element formed in each pixel region on the first substrate; A first electrode formed on an entire surface of the inner surface of the second substrate; The first electrode includes a first pattern having a first width in each boundary region below the first electrode, and a second pattern formed below the first pattern and having a second width greater than the first width. A partition wall having a cross-sectional structure having a “T” shape as a reference; An organic emission layer separated by each of the pixel regions by the barrier rib and formed under the first electrode in each pixel region; A second electrode formed below the organic light emitting layer for each pixel region; An electrical connection pattern electrically connected to the array element and the second electrode and formed independently for each pixel region Organic electroluminescent device comprising a. The method of claim 1, The thickness of the second pattern is an organic light emitting device of 1/3 to 1/2 of the total thickness of the partition wall. The method of claim 1, And a buffer pattern having a third width greater than the second width between the barrier rib and the first electrode corresponding to the boundary region. The method of claim 1, An organic light emitting display device, further comprising a connection electrode connecting the array element and the electrical connection pattern on the first substrate. The method of claim 1, An organic light emitting display device, further comprising a wiring auxiliary electrode formed between the second substrate and the first electrode to correspond to the boundary area. Forming a first electrode on a front surface of a first substrate on a pixel region and a boundary region between the pixel regions and surrounding the pixel region; T based on the first electrode including a first pattern having a first width in each boundary region above the first electrode and a second pattern having a second width greater than the first width above the first pattern; Forming a partition wall having a cross-sectional structure in the shape of a child; Forming an organic emission layer on the first electrode, the organic emission layer being automatically separated for each pixel region by a partition wall; Forming a second electrode on the organic emission layer, the second electrode being separated by each of the pixel regions by the partition wall; Forming an array element in each pixel region of an inner surface of a second substrate facing the first substrate; Electrically connecting the array element and the second electrode and forming an electrical connection pattern formed on each of the pixel regions on the first or second substrate; Bonding the first and second substrates such that the electrical connection pattern contacts the array element and the second electrode simultaneously; Method for producing an organic electroluminescent device comprising a. The method of claim 6, Forming the partition wall, Forming a photoresist layer having a first thickness over the first electrode on a front surface thereof; A first exposure such that the photoresist layer corresponding to a thickness of 1/3 to 1/2 of the first thickness with respect to the photoresist layer is reacted with light through a first exposure mask including the second width-transmissive portion; Performing a step; A second exposure is applied to the first exposed photoresist layer such that the photoresist layer of the first thickness corresponding to the transmission part is all irradiated through a second exposure mask including the transmission part of the first width. Performing; Developing the second exposed photoresist layer; Curing the photoresist layer that is developed and remains on the first electrode Method for producing an organic electroluminescent device comprising a. The method of claim 6, And forming a buffer pattern having a third width greater than the second width with respect to the boundary region before the forming of the barrier rib. A substrate; A barrier rib having a T-shaped cross-sectional structure with respect to the substrate having a first pattern having a first width on the substrate and a second pattern having a second width larger than the first width on the first pattern; and; A material layer which is automatically separated by the partition wall Device comprising a. Forming a photoresist layer having a first thickness on the entire surface of the substrate; A first exposure is performed such that the photoresist layer corresponding to a thickness of 1/3 to 1/2 of the first thickness with respect to the photoresist layer is reacted with light through a first exposure mask comprising a first width-transmissive portion. Performing; The photoresist layer of the first thickness corresponding to the transmissive portion is all reacted to the irradiated light through a second exposure mask including a transmissive portion having a second width smaller than the first width with respect to the first exposed photoresist layer. Performing a second exposure to effect; Developing the second exposed photoresist layer; Curing the photoresist layer that is developed and remains on the substrate. Forming method of partition wall having a T-shaped cross-sectional structure comprising a.

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