KR20070069225A - Organic electro-luminescence display device and method for fabricating of the same - Google Patents

Abstract

An organic electro-luminescence display device and a manufacturing method thereof are provided to remove an erroneous connection between sub-pixels by automatically dividing a second electrode into sub-pixels without using a patterning process. An organic electro-luminescence display device includes a first substrate(100), a first electrode(110), a buffer layer, a barrier rib(125), an organic light emitting layer(120), and a second electrode(130). Plural sub-pixels are defined on the first substrate. The first electrode is formed on the first substrate. The buffer layer is formed in a peripheral region where the sub-pixels are defined. The barrier rib is formed on the buffer layer. The barrier rib includes a concave lower portion. The organic light emitting layer is formed on the first electrode. The second electrode is formed on the organic light emitting layer.

Description

Organic electroluminescent display device and method for manufacturing same {Organic electro-luminescence display device and method for fabricating of the same}

1 is a schematic cross-sectional view of a conventional organic light emitting display device.

2A to 2C are cross-sectional views of an organic light emitting display device according to a first embodiment of the present invention.

3A to 3J are flowcharts illustrating a manufacturing process of an organic light emitting display device according to a second exemplary embodiment of the present invention.

 (Explanation of symbols for the main parts of the drawing)

 100, 300: first substrate 200, 400: second substrate

 105, 305: auxiliary electrode 110, 310: first electrode

 115, 320 ': buffer layer 125, 340': bulkhead

 135, 350: spacer 120, 360: organic light emitting layer

 130 and 370: second electrode 205 and 405: gate electrode

 215 and 415: active layers 225a and 425a: source electrode

 225b and 425a: drain electrode

 E: organic light emitting diode element Tr: thin film transistor

 P ': Trench

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent display, and more particularly, to a dual panel type organic electroluminescent display and a method of manufacturing the same, which can prevent short defects between subpixels.

The organic light emitting display device uses light through electrons and holes to form electron-hole pairs in a semiconductor, or carriers are excited to a higher energy state and then fall back to a stabilized ground state. This phenomenon is used.

As such, since the organic light emitting display device is a self-luminous type, a backlight is not required like a liquid crystal display device, and thus, a light weight can be achieved. In addition, it has advantages such as low voltage driving, high luminous efficiency, wide viewing angle and fast response speed, which is advantageous to realize high quality video.

In particular, unlike the liquid crystal display device or the plasma display panel (PDP), all of the deposition and encapsulation equipments are manufactured in the manufacturing process of the organic light emitting display device.

In addition, when the organic light emitting display device is driven by an active matrix method having a thin film transistor as a switching element for each pixel, the same luminance is displayed even when a low current is applied, thereby having low power consumption, high definition, and large size.

FIG. 1 is a schematic cross-sectional view of a conventional organic light emitting display device, which illustrates a cross-sectional structure of an active matrix method that operates in a bottom emission method.

Referring to FIG. 1, the substrate 10 on which the thin film transistor Tr is formed is positioned. The thin film transistor Tr includes a gate electrode 15, an active layer 25, and source / drain electrodes 27a and 27b.

 Thereafter, the passivation layer 20 having a contact hole exposing a portion of the drain electrode 27b is positioned.

The first electrode 30 is electrically connected to the drain electrode 27b through the contact hole formed in the passivation layer 20.

An insulating layer 40 in which a subpixel is defined is positioned on the first electrode 30, and an organic emission layer 50 is positioned on the first electrode 30 of the subpixel. The second electrode 60 is formed as a common electrode on the organic light emitting layer 50. The first and second electrodes 30 and 60 serve to apply an electric field so that the organic light emitting layer 50 can emit light.

Subsequently, in order to protect the organic EL device E formed on the substrate 10 from external moisture and oxygen, a sealant 70 is applied to an outer portion of the substrate 10 and then the organic electric field. An organic light emitting display device is manufactured by performing an encapsulation process of bonding the encapsulation substrate 80 to face the light emitting diode element E.

That is, such an organic light emitting display device is formed by bonding a substrate on which the array element and the organic light emitting diode element are formed and a separate encapsulation substrate. In this case, since the product of the yield of the array device and the yield of the organic light emitting diode device determines the yield of the organic light emitting display device, the overall process yield is greatly limited by the manufacturing process of the organic light emitting diode device corresponding to the latter step. do. For example, even if the array element is well formed, when the organic light emitting layer using the thin film having a thickness of about 1000 GPa generates defects due to foreign matter or other elements, the organic light emitting display device is determined as a poor grade.

This results in a loss of overall costs and material costs that were required to manufacture the array device of good quality, there is a problem that the production yield is lowered.

In addition, the bottom emission type organic light emitting display device has a high stability and a degree of freedom in the process due to the encapsulation process, but has a problem in that it is difficult to apply to a high resolution product due to the limitation of the aperture ratio. On the other hand, the organic light emitting display device of the top emission type is advantageous in terms of product life because it is easy to design a thin film transistor and improves the aperture ratio. However, in the conventional top emission type organic light emitting display device, since the material selection range is narrow as the cathode is normally positioned on the organic light emitting layer, the transmittance is limited and the light efficiency is lowered.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic electroluminescent display device and a method of manufacturing the same, which are formed so that the yields of the thin film transistor and the organic light emitting diode element are not affected by each other, thereby increasing the defect rate and the production management efficiency.

In addition, another object of the present invention is to provide an organic light emitting display device having an improved light efficiency and a method of manufacturing the same.

Another object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which can prevent short defects between subpixels.

In order to achieve the above technical problem, an aspect of the present invention provides an organic light emitting display device. The organic light emitting diode display may include a first substrate on which a plurality of subpixels are defined; A first electrode formed on the first substrate; A buffer layer formed in an outer region partitioning each sub pixel on the first electrode; A partition wall formed on the buffer layer and having a lower portion recessed therein; An organic emission layer formed on the first electrode; And a second electrode formed on the organic light emitting layer.

In order to achieve the above technical problem, a method of manufacturing an organic light emitting display device according to another aspect of the present invention is provided. The manufacturing method includes providing a first substrate on which a plurality of subpixels are defined; Forming a first electrode on the first substrate; Forming an insulating film on the first electrode; Forming a first photosensitive film pattern on the insulating film; Etching the insulating film corresponding to the first photosensitive film pattern to form a buffer layer; Forming a second photosensitive film pattern on the first photosensitive film pattern; Removing the first photosensitive film pattern to form a partition wall formed of the second photosensitive film pattern; Forming an organic emission layer on the first electrode; And forming a second electrode on the organic light emitting layer.

Hereinafter, an organic light emitting display device according to the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.

2A to 2C are cross-sectional views of an organic light emitting display device according to a first embodiment of the present invention.

Referring to FIG. 2A, the organic light emitting display device includes a first substrate 100 and a second substrate 200 which are disposed to be spaced apart from each other at predetermined intervals.

Here, an organic EL device E is formed inside the first substrate 100. In addition, a thin film transistor Tr is formed inside the second substrate 200.

In this case, the organic light emitting diode device E and the thin film transistor Tr are electrically connected to each other by a spacer 150 interposed between the first substrate 100 and the second substrate 200. In addition, the two substrates may maintain a constant gap by the spacer 150.

As a result, the organic light emitting diode device E emits light by driving the thin film transistor Tr, and light is emitted to the second substrate 200 to provide an image to the user.

Referring to FIG. 2B, the first substrate 100 in which the organic light emitting diode device E constituting the organic light emitting display device of FIG. 2A is formed will be described in detail.

First, the first substrate 100 is located, the first substrate 100 is defined by a plurality of subpixels. The first substrate 100 is a transparent material, but may be a glass substrate or a plastic substrate, but is not limited in the embodiment of the present invention.

The first electrode 110 is positioned on the first substrate 100. In this case, the first electrode 110 may be made of a transparent conductive material. For example, the first electrode 110 may be made of ITO or IZO. As a result, when light is emitted to the first substrate 100, that is, the first electrode 100 having excellent transmittance is positioned above the organic light emitting display device of the top emission type, the light efficiency may be improved. .

Furthermore, an auxiliary electrode 105 electrically connected to the first electrode 110 may be positioned on the first substrate 100. Here, the auxiliary electrode 105 serves to reduce the resistance difference between the first electrode 110. This is because since the first electrode 110 is made of a material having a high resistance as described above, the luminance may be uneven.

Here, the auxiliary electrode 105 may be made of at least one material selected from the group consisting of a metal having low resistance, for example, Al, AlNd, Mo, or Cr.

The buffer layer 115 is positioned on the first electrode 110 in an outer region that partitions each sub pixel. The buffer layer 115 may be formed of a silicon oxide film, a silicon nitride film, or a stacked film thereof.

In this case, the buffer layer 115 includes a trench, and the partition wall 125 is disposed in the trench. The partition wall 125 serves as a separator for separating the second electrode to be described later into each subpixel. At this time, if the second electrode is not separated by the partition 125, a short failure of the second electrode, that is, a short failure between each third pixel may occur locally.

Thus, in order to efficiently separate the second electrode, the partition wall 125 has a shape in which a lower portion thereof is recessed than an upper portion. That is, the partition 125 may have at least one shape selected from the group consisting of TT, Y and I.

Thus, when the conductive material for forming the second electrode is deposited on the substrate including the partition wall 125, the partition material 125 may be easily and automatically separated.

The partition wall 125 may be formed to include a photosensitive resin. For example, the partition wall 125 may be formed to include at least one selected from the group consisting of acrylic resin, benzocyclobutene (BCB), polyimide (PI), and novolac resin.

The spacer layer 115 may be formed on the buffer layer 115, and may be spaced apart from the partition wall 125 by a predetermined interval.

The spacer 150 serves to maintain a cell gap between the first substrate 100 and the second substrate 200, and is formed on the organic EL device E and the second substrate formed on the first substrate. It serves to electrically connect the thin film transistor (Tr).

The organic light emitting layer 120 is positioned on the first electrode 110 including the spacer 125.

The organic emission layer 120 may further include at least one organic layer selected from the group consisting of a hole injection layer, a hole transport layer, a hole suppression layer, an electron transport layer, and an electron injection layer on an upper surface or a lower surface thereof. As a result, the energy level at each interface of the first electrode 110, the organic light emitting layer 120, and the second electrode 130 is appropriately adjusted to efficiently inject electrons and holes into the organic light emitting layer 120. Can be. As a result, the luminous efficiency of the completed organic light emitting display device can be improved.

The second electrode 130 is positioned on the organic light emitting layer 120. In this case, as described above, the second electrode 130 is separated by the partition wall 125 in units of subpixels.

The second electrode 130 is a conductive material having a reflective property, and may be made of one material selected from the group consisting of Mg, Ca, Al, Ag, Ba, and alloys thereof.

Although not shown in the figure, a moisture absorbing layer may be further provided on the second electrode 130. This is because the organic light emitting layer 120 reacts with moisture or oxygen, so that the chemical structural formula of the material forming the organic light emitting layer 120 is changed, so that the light emission characteristics may be lost. As a result, black spots in which one part of the pixel does not emit light may occur. In addition, the sunspots increase over time, so that one subpixel may not emit light, which may cause a failure of the completed organic electroluminescent display, and the lifespan is reduced. This is to solve the problem by further forming the moisture absorption layer. At this time, the moisture absorption layer is barium oxide, calcium oxide, aluminum oxide, lithium sulfate, sodium sulfate, calcium sulfate, magnesium sulfate. It may be made of one or more materials selected from the group consisting of cobalt sulfate, gallium sulfate, titanium sulfate, calcium chloride, calcium nitrate.

At this time, the moisture absorbing layer is preferably not formed in the top of the spacer 150, that is, the region in contact with the thin film transistor (Tr) in order to prevent poor contact with the thin film transistor (Tr).

Meanwhile, referring to FIG. 2C, the second substrate 200 on which the thin film transistor Tr constituting the organic light emitting display device of FIG. 2A is described will be described.

Although not shown, the second substrate 200 includes a plurality of gate lines and data lines arranged to cross each other, and a plurality of subpixels are defined by the two lines. In this case, a thin film transistor Tr is provided at an intersection point of the two wires, that is, each subpixel. Although one thin film transistor is formed in each subpixel in the drawing, the present invention is not limited thereto, and at least one thin film transistor and a capacitor may be further formed. However, description is omitted for convenience of explanation.

In detail, the gate electrode 205 is positioned on the second substrate 200. A gate insulating layer 210 is positioned on the second substrate 200 including the gate electrode 205. The gate insulating film 210 may be a silicon oxide film, a silicon nitride film, or a stacked film thereof.

An active layer 215 is disposed on the gate insulating layer 210 corresponding to the gate electrode 205. The active layer 215 may include a channel layer 215a made of amorphous silicon and an ohmic contact layer 215b made of amorphous silicon doped with impurities.

Source / drain electrodes 225a and 225b are disposed on both ends of the active layer 215. The source / drain electrodes 225a and 225b may be formed of at least one selected from the group consisting of Al, AlNd, Mo, and Cr.

Accordingly, the thin film transistor Tr including the gate electrode 205, the active layer 215, and the source / drain electrodes 225a and 225b is positioned on the second substrate 200.

Here, in the exemplary embodiment of the present invention, the thin film transistor Tr is illustrated and described as being limited to a bottom gate type thin film transistor made of amorphous silicon. However, the present invention is not limited thereto, and various types of thin film transistors currently known may be employed. .

A passivation layer 220 having a contact hole exposing the drain electrode 225b is disposed on the second substrate 200 including the thin film transistor Tr. The protective film 220 may be formed of at least one selected from the group consisting of acrylic resin, benzocyclobutene (BCB), silicon oxide, and silicon nitride.

In addition, a connection electrode 235 electrically connected to the drain electrode 225b exposed through the contact hole may be further located.

As a result, a lower portion of the barrier rib 125 for separating the second electrode 130 in units of subpixels is recessed, that is, a width of an upper portion thereof is wider than a lower portion of the barrier rib, so that the second electrode 130 is formed. ) Can be prevented from being shorted between each subpixel at the time of formation, and the short failure between each subpixel can be prevented.

3A to 3J are flowcharts illustrating a manufacturing process of an organic light emitting display device according to a second exemplary embodiment of the present invention.

Referring to FIG. 3A, a first substrate 300 defined by a plurality of subpixels is provided. The first substrate 300 is a glass substrate or a plastic substrate, it is preferable to select a transparent material.

A low resistance conductive material is deposited on the first substrate 300 and then patterned to form an auxiliary electrode 305. The auxiliary electrode 305 serves to reduce the resistance difference of the first electrode formed in a subsequent process. The low resistance conductive material may be at least one material selected from the group consisting of Al, AlNd, Mo, or Cr.

The transparent conductive material is deposited on the first substrate 300 including the auxiliary electrode 305 and then patterned to form the first electrode 310. For example, the transparent conductive material may be ITO or IZO.

Referring to FIG. 3B, an insulating film 320 is formed on the first electrode 310. The insulating layer 320 may be formed of a silicon oxide film, a silicon nitride film, or a stacked film thereof. In this case, the insulating layer 320 may be formed by performing chemical vapor deposition (PECVD).

The first photosensitive layer 330 is formed on the insulating layer 320. The first photosensitive film 330 may be made of a positive photosensitive resin or a negative photosensitive resin. For example, the first photosensitive layer 330 may be formed to include at least one selected from the group consisting of acrylic resin, benzocyclobutene (BCB), polyimide (PI), and novolac resin.

The first photosensitive pattern 330 ′ is formed on the first photosensitive layer 330 through an exposure and development process, as shown in FIG. 3C. In this case, the first photosensitive film pattern 330 ′ is formed in an outer region dividing each subpixel. In this case, it is preferable to further form an opening region P exposing a part of the outer region.

Corresponding to the first photosensitive film pattern 330 ', the insulating film 320 is etched to form a buffer layer 320', as shown in FIG. 3D. As a result, the buffer layer 320 'is formed in an outer region that divides each subpixel, and a trench P' is formed by the opening region P of the first photosensitive film pattern 330 '.

Referring to FIG. 3E, a second photosensitive layer 340 is formed on the first electrode 310 including the first photosensitive layer pattern 330 ′. The second photosensitive layer 340 may be formed to include at least one selected from the group consisting of acrylic resin, benzocyclobutene (BCB), polyimide (PI), and novolak-based resin. Here, the second photosensitive film 340 may be made of a positive photosensitive resin or a negative photosensitive resin. At this time, when the first photosensitive film 330 is formed of a positive photosensitive resin, the second photosensitive film 340 is formed of a negative photosensitive resin. On the contrary, when the first photosensitive film 330 is formed of a negative photosensitive resin, the second photosensitive film 340 is formed of a positive photosensitive resin.

Thus, the first photosensitive layer 330 and the second photosensitive layer 340 may be formed of materials having different characteristics with respect to light. This is because, in the exposure process for patterning the second photosensitive film 340, the first photosensitive film 330 may be affected and removed.

In this case, the second photosensitive layer 340 is also formed in the trench P 'of the buffer layer 320'.

Through the exposure and development processes on the second photosensitive film 340, as shown in FIG. 3F, a second photosensitive film pattern 340 ′ is formed. In this case, the second photosensitive layer pattern 340 ′ is formed to overlap a portion of the first photosensitive layer pattern 330 ′ including the trench of the buffer layer 320 ′.

The first photosensitive film pattern 340 ′ is peeled off to form a partition 340 ′ as shown in FIG. 3G. The partition 340 ′ is formed to have a lower portion as the first photosensitive layer pattern 340 ′ inserted into the lower portion of the second photosensitive layer pattern 340 ′ is removed. As a result, the partition wall 340 ′ having a lower width than the upper width may be formed. In this case, the partition 340 ′ may be formed in at least one shape selected from the group consisting of TT, Y and I.

That is, the barrier rib may be formed by vertically forming the first photosensitive film pattern 340 ', and the partition of Y may be formed by forming the first photosensitive film pattern 340' in a reverse tapered shape. Can be. In addition, the I-shaped partition wall may be formed when the buffer layer 320 'has an undercut shape. However, although the I-shaped partition wall is referred to here, since the undercut of the buffer layer 320 'does not occur to the inside, the width of the lower portion is smaller than the width of the upper portion.

Thereafter, a hardening process through a heat treatment process may be further performed on the partition 340 ′.

Thus, as the partition wall having a wider width than the lower portion is formed, the second electrode to be described later may be easily separated and formed in each subpixel unit.

Referring to FIG. 3H, a spacer 350 spaced apart from the barrier rib 340 ′ is formed on the buffer layer 320 ′.

The spacer 350 may be formed through an exposure and development process after forming an insulating film. The spacer 350 serves to maintain a cell gap between the first substrate 100 on which the organic light emitting diode element is formed and the second substrate on which the thin film transistor is formed, which will be described later, and the organic light emitting diode element and the thin film. It serves to electrically connect transistors.

Referring to FIG. 3I, an organic emission layer 360 is formed on the first electrode 310. Here, the organic light emitting layer 360 may be a low molecular material or a polymer material. In this case, the organic light emitting layer 360 may be formed by performing a vacuum deposition method in the case of a low molecular material, and may be formed by performing an inkjet printing method in the case of a polymer material. In this case, at least one organic layer selected from the group consisting of a hole injection layer, a hole transport layer, a hole suppression layer, an electron transport layer, and an electron injection layer may be further formed before or after the organic emission layer 360 is formed.

Thereafter, a second electrode 370 is formed on the organic emission layer 360. In this case, the second electrode 370 is automatically separated by each partition pixel 370 in the process of depositing a conductive material. As a result, the second electrode 370 may be formed without performing a separate patterning process. As described above, the partition wall 370 has a shape in which the lower part is recessed, that is, the width of the upper part is wider than the lower part, so that the second electrode 370 is reliably separated in units of subpixels. can do. As a result, the second electrode 370 may prevent a short between each subpixel.

In addition, since the second electrode 370 is also formed on the spacer 150, a part of the second electrode 370 is led upward by the spacer 150, so that the device of the second substrate to be described later will be described. Is electrically connected to the

Although not shown, a moisture absorbing layer may be further formed on the second electrode 370 to protect the organic emission layer 360 from moisture.

Referring to FIG. 3J, a second substrate 400 on which a thin film transistor Tr is formed is provided.

In detail, a method of forming a thin film transistor on the second substrate 400 firstly provides a second substrate 400. The second substrate 400 may be made of plastic, glass, or metal. A gate electrode 405 is formed on the second substrate 400, and a gate insulating layer 210 is formed over the entire surface of the second substrate 400 including the gate electrode 405. The gate insulating layer 410 may be formed by depositing silicon oxide or silicon nitride by chemical vapor deposition.

An active layer 415 is formed on the gate insulating layer 410 to which the gate electrode 405 corresponds. Here, the active layer 415 is formed by sequentially stacking an amorphous silicon film, an amorphous silicon film doped with P-type or N-type impurities, and then patterning the channel layer 415a and the ohmic contact layer 415b. Include.

A conductive metal is deposited on the active layer 415 and then patterned to form source / drain electrodes 425a and 425b positioned on both ends of the active layer 215.

Accordingly, the thin film transistor Tr including the gate electrode 405, the active layer 415, and the source / drain electrodes 425a and 425b may be formed on the second substrate 400. Here, in the drawings, the present invention has been described with the limitation of forming one thin film transistor on the second substrate 400. However, at least one thin film transistor and a capacitor may be further formed on the second substrate 400.

In addition, although the thin film transistor Tr has been described as being limited to forming a bottom gate thin film transistor using amorphous silicon, various types of known thin film transistors may be employed.

The passivation layer 420 is formed over the entire surface of the second substrate 400 including the thin film transistor Tr. The protective film 420 may be formed of silicon nitride or silicon oxide, and may be formed by performing chemical vapor deposition. A contact hole for exposing the drain electrode 425b is formed in the passivation layer 420. Furthermore, a connection electrode 435 may be further formed on the drain electrode 425b exposed through the contact hole.

Subsequently, after a seal pattern is applied to an outer portion of the first substrate 300 or the second substrate 400, the organic EL device E and the second substrate of the first substrate 300 are formed. The first substrate 300 and the second substrate 400 may be bonded to each other so that the thin film transistors Tr of the substrate 400 face each other, thereby manufacturing an organic light emitting display device.

As described above, the organic light emitting display device according to the present invention forms a thin film transistor and an organic light emitting diode element on different substrates, and then combines the two substrates to manufacture the organic light emitting display device, thereby reducing the defect rate and Along with this, the yield of production can be expected.

In addition, as the lower portion of the partition wall for separating the second electrode is recessed, the width of the lower portion can be formed smaller than the upper portion, and the second electrode can be reliably separated in units of subpixels, so that the short between the subpixels is reduced. Defects can be prevented.

Moreover, short defects can be prevented and production yield can be improved.

In addition, the second electrode can be automatically separated into subpixels without a separate patterning process, thereby improving productivity.

Although described above with reference to embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the invention described in the claims below. I can understand that.

Claims (22)

A first substrate on which a plurality of subpixels are defined; A first electrode formed on the first substrate; A buffer layer formed in an outer region partitioning each sub pixel on the first electrode; A partition wall formed on the buffer layer and having a lower portion recessed therein; An organic emission layer formed on the first electrode; And And a second electrode formed on the organic light emitting layer. The method of claim 1, A trench is formed in the buffer layer. The method of claim 2, And the partition wall is formed in the trench. The method of claim 1, The barrier rib has at least one shape selected from the group consisting of TT, Y and I. The method of claim 1, The partition wall is formed of a photosensitive resin, an organic light emitting display device. The method of claim 1, The barrier rib is formed by including at least one selected from the group consisting of acrylic resin, benzocyclobutene (BCB), polyimide (PI) and novolac resin. The method of claim 1, And a spacer disposed to be spaced apart from the barrier rib at a predetermined interval. The method of claim 1, And the second electrode is separated in units of subpixels by the partition wall. The method of claim 1, And an auxiliary electrode formed between the first substrate and the first electrode. The method of claim 1, And at least one or more selected from the group consisting of an electron injection layer, an electron transport layer, a hole suppression layer, a hole transport layer, and a hole injection layer on the organic light emitting layer. The method of claim 1, And a moisture absorbing layer formed on the second electrode. The method of claim 1, The organic light emitting display device of claim 1, further comprising a second substrate disposed to be spaced apart from the first substrate at a predetermined interval and provided with at least one thin film transistor. Providing a first substrate on which a plurality of subpixels are defined; Forming a first electrode on the first substrate; Forming an insulating film on the first electrode; Forming a first photosensitive film pattern on the insulating film; Etching the insulating film corresponding to the first photosensitive film pattern to form a buffer layer; Forming a second photosensitive film pattern on the first photosensitive film pattern; Removing the first photosensitive film pattern to form a partition wall formed of the second photosensitive film pattern; Forming an organic emission layer on the first electrode; And And forming a second electrode on the organic light emitting layer. The method of claim 13, And the insulating film is formed of a silicon nitride film, a silicon oxide film, or a laminated film thereof. The method of claim 13, And forming a trench in the buffer layer. The method of claim 15, And wherein the barrier rib is formed in the trench. The method of claim 13, And the first photosensitive film pattern is formed of a positive photosensitive resin, and the second photosensitive film pattern is formed of a negative photosensitive resin. The method of claim 13, And the first photosensitive film pattern is formed of a negative photosensitive resin, and the second photosensitive film pattern is formed of a positive photosensitive resin. The method of claim 15, And the second photosensitive film pattern is formed to partially overlap the first photosensitive film pattern including the trench. The method of claim 13, After removing the first photosensitive film pattern to form a partition wall formed of the second photosensitive film pattern, And hardening the partition wall. The method of claim 13, After removing the first photosensitive film pattern to form a partition wall formed of the second photosensitive film pattern, And forming a spacer spaced apart from the barrier rib at a predetermined interval on the buffer layer. The method of claim 13, And forming an auxiliary electrode on the first substrate prior to forming the first electrode on the first substrate.

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