KR20080032172A - Resin composition for sealing filler, flip chip mounting method using same, and flip chip mounted article - Google Patents

Resin composition for sealing filler, flip chip mounting method using same, and flip chip mounted article Download PDF

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KR20080032172A
KR20080032172A KR1020087003270A KR20087003270A KR20080032172A KR 20080032172 A KR20080032172 A KR 20080032172A KR 1020087003270 A KR1020087003270 A KR 1020087003270A KR 20087003270 A KR20087003270 A KR 20087003270A KR 20080032172 A KR20080032172 A KR 20080032172A
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South Korea
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resin composition
sealing
resin
semiconductor chip
circuit board
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KR1020087003270A
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Korean (ko)
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KR100967753B1 (en
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오사무 마츠자카
카츠히코 야스
토모히로 히라타
타케노리 오오쿠보
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히다치 가세고교 가부시끼가이샤
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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Abstract

Disclosed is a resin composition for sealing fillers which does not induce electrode corrosion in a wired circuit board during continuous voltage application test under high temperature, high humidity conditions, while having low elastic modulus and good stability at room temperature (25°C). Also disclosed are a mounting method and a flip chip mounted article respectively using such a resin composition for sealing fillers. Specifically disclosed is a resin composition (6, 6A) for sealing fillers which is used as a sealing filler for bonding and sealing a space between a semiconductor chip (10) and a film-like base (1). This resin composition contains a polyolefin thermoplastic resin and an adhesiveness-imparting agent, and the chlorine ion concentration in the resin composition is more than 0 but not more than 10 ppm. The space between the semiconductor chip (10) and the film-like base (1) is filled with the resin composition (6, 6A), and a bump (11) of the semiconductor chip (10) and a metal plating (3) of the film-like base (1) are joined with each other.

Description

봉지 충전제용 수지 조성물, 그것을 사용한 플립 칩 실장방법 및 플립 칩 실장품{RESIN COMPOSITION FOR SEALING FILLER, FLIP CHIP MOUNTING METHOD USING SAME, AND FLIP CHIP MOUNTED ARTICLE }RESIN COMPOSITION FOR SEALING FILLER, FLIP CHIP MOUNTING METHOD USING SAME, AND FLIP CHIP MOUNTED ARTICLE}

본 발명은, 봉지 충전제용 수지 조성물, 그것을 사용한 플립 칩 실장방법 및 플립 칩 실장품에 관한 것으로서, 더욱 상세하게는, 반도체 칩과 배선회로기판과의 간극(間隙)에 충전되는 봉지 충전제용 수지 조성물, 그것을 사용한 플립 칩 실장방법 및 플립 칩 실장품에 관한 것이다.The present invention relates to a resin composition for a sealing filler, a flip chip mounting method and a flip chip mounting product using the same, and more particularly, a resin composition for a sealing filler filled in a gap between a semiconductor chip and a wiring circuit board. And a flip chip mounting method using the same, and a flip chip mounting product.

전자기기의 소형화, 경량화나 박형화가 진행되고, 그에 수반하여 반도체 칩 및 배선회로기판의 소형화, 경량화 및 박형화도 요구되고 있다. 일반적으로, 반도체 칩은 배선회로기판상에 실장된다. 반도체 칩 부품을 배선회로기판상에 실장하는 방법으로서, 반도체 칩의 범프와 배선회로기판의 전극을, 땜납이나 공정(共晶)금속을 사용하여 접합시켜 도통시키는 플립 칩 실장방법이 사용되고 있다. 또한, 배선회로기판의 소형화, 경량화 및 박형화를 위해서, 기판 재료는, 유리 에폭시와 같은 리지드한 재료로부터 폴리이미드 필름 등의 유연한 재료로 이행하고 있다. 상기 플립 칩 실장방법으로는, 반도체 칩과 배선회로기판의 선팽창 계수의 차이로부터 열충격에 대한 접속 신뢰성에 문제가 있고, 이 개선을 위하여 반도체 칩과 배선회로 기판의 사이에 봉지 충전제를 사용하는 것이 일반적이다. 이 봉지 충전제에 의해, 접합 부분에 발생하는 응력을 완화하여 접속 신뢰성을 높이고 있다.Miniaturization, weight reduction, and thickness reduction of electronic devices are progressing, and accordingly, miniaturization, weight reduction, and thickness reduction of semiconductor chips and wiring circuit boards are also required. Generally, a semiconductor chip is mounted on a wiring circuit board. As a method of mounting a semiconductor chip component on a wiring circuit board, a flip chip mounting method is used in which bumps of a semiconductor chip and electrodes of a wiring circuit board are joined by conducting by soldering or using a process metal. In addition, in order to reduce the size, weight, and thickness of the wiring circuit board, the substrate material has shifted from a rigid material such as glass epoxy to a flexible material such as polyimide film. In the flip chip mounting method, there is a problem in connection reliability against thermal shock due to a difference in the coefficient of linear expansion between the semiconductor chip and the wiring circuit board. For this improvement, a sealing filler is used between the semiconductor chip and the wiring circuit board. to be. By this sealing filler, the stress which generate | occur | produces in a junction part is alleviated and connection reliability is improved.

종래의 봉지 충전제를 플립 칩 실장에 사용하기 위해서는, 반도체 칩과 배선회로기판을 높은 온도에서 접합한 후에, 그 간극을 저점도의 열경화성 액상 수지 조성물을 모세관 현상에 의해 주입, 충전하여, 열경화하는 방법이 사용되고 있었다. 그러나 이 방법으로는, 배선 간극이나, 반도체 칩과 배선회로기판과의 간극이 더 좁아지면(파인 피치화), 작업 효율의 저하나, 충전이 곤란하다는 문제가 있었다. 그 때문에, 접합 직전에 미리 열경화성 액상 수지 조성물을 반도체 칩 또는 배선회로기판의 소정의 위치에 도포, 또는 적하해 두고, 그 후에 반도체 칩의 범프와 배선회로기판의 전극을 가열 압착하는 것에 의해, 반도체 칩 및 배선회로기판의 간극을 봉지 충전하는 방법이 검토되고 있다.In order to use a conventional sealing filler for flip chip mounting, after bonding a semiconductor chip and a wiring circuit board at a high temperature, the gap is injected and filled with a low-viscosity thermosetting liquid resin composition by capillary action, followed by thermosetting. The method was being used. However, this method has a problem in that when the gap between the wiring and the semiconductor chip and the wiring circuit board becomes narrower (fine pitch), the work efficiency is lowered and the charging is difficult. Therefore, the thermosetting liquid resin composition is applied or dropped in a predetermined position on the semiconductor chip or the wiring circuit board immediately before the bonding, and then the semiconductor chip bumps and the electrodes of the wiring circuit board are heat-compressed for the semiconductor. The method of sealing and filling the gap of a chip | tip and a wiring circuit board is examined.

이 방법에 적절하게 사용되는 봉지 충전제로는, 도포, 적하 후에 적당한 두께를 유지할 수 있을 것, 가열 접합할 때에 적당한 유동성을 가져서 반도체 칩과 배선회로기판의 간극을 극간(隙間) 없이 충전할 수 있을 것, 접합시의 가열에 의한 분해나 발포가 없을 것, 적당한 온도 및 속도로 고체화할 것, 고체화했을 때에 전기 절연성이 높고, 배선 기판상의 전극에의 부식 요인을 가지지 않을 것, 배선회로기판, 반도체 칩, 솔더레지스트 등의 주변 부재간의 응력완화를 위해 탄성률이 작을 것이 요구되고 있다. 이와 같은 봉지 충전제로서는, 에폭시 수지계 열경화성 수지가 적절하게 사용되고 있고, 탄성률을 낮추는 시도가 이루어지고 있다(특허문헌 1 참조).As a sealing filler suitably used in this method, a suitable thickness can be maintained after coating and dropping, and can be filled without gap between the semiconductor chip and the wiring circuit board by having proper fluidity during heat bonding. No decomposition or foaming by heating at the time of joining, solidification at proper temperature and speed, high electrical insulation when solidifying, no corrosion factor to electrodes on wiring board, wiring circuit board, semiconductor Small elastic modulus is required for stress relaxation between peripheral members such as chips and solder resists. As such a sealing filler, the epoxy resin thermosetting resin is used suitably, and the attempt to lower an elasticity modulus is made (refer patent document 1).

특허문헌 1 : 일본 특허공개공보 2004-10810호Patent Document 1: Japanese Patent Publication No. 2004-10810

발명의 개시Disclosure of the Invention

발명이 Invention 해결고자Resolution 하는 과제 Challenge

그러나, 에폭시계 열경화성 수지는, 흡수성이 높고, 그 제조법으로부터 이온성 불순물을 많이 함유하기 때문에, 고온 고습하에서의 연속 전압인가 시험에 있어서 배선회로기판의 전극 부식을 유발하고, 회로가 쇼트하는 문제가 있었다. 즉, 일반적으로 이온성 불순물은, 내마이그레이션성을 저하시키는 요인이 되고, 에폭시계 열경화성 수지를 제조할 때에, 원료로서 에피클로르히드린(염소원자를 포함한 화합물)을 사용하기 때문에, 이것이 원인이 되어 염소 이온이 다량으로 포함되어 있었다. 또한, 적절한 온도 및 속도로 경화시키기 위해서 탄성률이 높은 경화물 밖에 제안할 수 없는 것이나, 상온에서의 안정성이 나쁘기 때문에, 저온에서의 보관이 필요하여 사용 가능 시간이 매우 짧다고 하는 문제가 있었다.However, since epoxy-based thermosetting resins have high water absorption and contain a large amount of ionic impurities from the manufacturing method thereof, there is a problem of causing corrosion of the circuit boards and short circuiting in the continuous voltage application test under high temperature and high humidity. . That is, in general, ionic impurities cause deterioration in migration resistance, and when epitaxial thermosetting resins are used, epichlorohydrin (a compound containing chlorine atoms) is used as a raw material, and this is the cause. It contained a large amount of chlorine ions. Moreover, only hardened | cured material with high elastic modulus can be proposed in order to harden | cure at an appropriate temperature and speed | rate, and since stability at normal temperature is bad, there existed a problem that storage at low temperature is required and the usable time is very short.

본 발명은, 상기 종래 기술의 문제점을 감안하여, 미리 봉지 충전제를 배치해 두는 플립 칩 실장방법에 있어서, 고온 고습하에서의 연속 전압인가 시험에 있어서 배선회로기판의 전극 부식을 유발하지 않고, 탄성률이 낮고, 상온(25℃)에서의 안정성이 양호한 봉지 충전제용 수지 조성물, 그것을 사용한 플립 칩 실장방법, 및 플립 칩 실장품을 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION In view of the above problems of the prior art, the present invention provides a flip chip mounting method in which an encapsulating filler is disposed in advance, wherein in the continuous voltage application test under high temperature and high humidity, the electrode circuit of the wiring circuit board does not cause corrosion and the elastic modulus is low. It is an object to provide a resin composition for a sealing filler having good stability at normal temperature (25 ° C), a flip chip mounting method using the same, and a flip chip package.

과제를 해결하기 위한 수단Means to solve the problem

즉, 본 발명에 의한 봉지 충전제용 수지 조성물은, 반도체 칩과 배선회로기판과의 간극의 접착 봉지 충전제에 사용되는 봉지 충전제용 수지 조성물로서, 상기 수지 조성물이 폴리올레핀계 열가소성 수지 및 점착성 부여제를 함유하고, 또한, 상기 수지 조성물 중의 염소이온 농도가 0을 넘어 10ppm 이하인 것을 특징으로 한다.That is, the resin composition for encapsulation filler according to the present invention is a resin composition for encapsulation filler used in an adhesive encapsulation filler in a gap between a semiconductor chip and a wiring circuit board, wherein the resin composition contains a polyolefin-based thermoplastic resin and a tackifier. In addition, the chlorine ion concentration in the resin composition is characterized in that more than 10ppm or less.

또한, 본 발명의 봉지 충전제용 수지 조성물에 있어서는, 상기 폴리올레핀계 열가소성 수지의 함유량이, 상기 봉지 충전제용 수지 조성물의 전체 고형분에 대해서, 20~99중량%인 것을 특징으로 한다.Moreover, in the resin composition for sealing fillers of this invention, content of the said polyolefin thermoplastic resin is 20 to 99 weight% with respect to the total solid of the resin composition for sealing fillers, It is characterized by the above-mentioned.

또한, 본 발명의 봉지 충전제용 수지 조성물에 있어서는, 상기 폴리올레핀계 열가소성 수지가, 폴리에틸렌, 폴리프로필렌, 및 폴리옥시메틸렌으로 이루어지는 군으로부터 선택되는 적어도 1종인 것을 특징으로 한다.Moreover, in the resin composition for sealing fillers of this invention, the said polyolefin thermoplastic resin is at least 1 sort (s) chosen from the group which consists of polyethylene, a polypropylene, and polyoxymethylene.

또한, 본 발명의 봉지 충전제용 수지 조성물에 있어서는, 상기 점착성 부여제가, 로진계 수지, 테르펜계 수지, 테르펜-페놀수지, 지방족계 석유수지, 방향족계 석유수지, 및 디시클로펜타디엔계 석유수지로 이루어지는 군으로부터 선택되는 수지인 것을 특징으로 한다.Moreover, in the resin composition for sealing fillers of this invention, the said tackifier is rosin-type resin, terpene-type resin, terpene- phenol resin, aliphatic petroleum resin, aromatic petroleum resin, and dicyclopentadiene petroleum resin. It is characterized by being resin chosen from the group which consists of.

또한, 본 발명의 봉지 충전제용 수지 조성물에 있어서는, 상기 봉지 충전제용 수지 조성물의 흡수율이, 2.5중량% 이하인 것을 특징으로 한다.Moreover, in the resin composition for sealing filler of this invention, the water absorption of the said resin composition for sealing filler is 2.5 weight% or less, It is characterized by the above-mentioned.

또한, 본 발명의 봉지 충전제용 수지 조성물에 있어서는, 상기 봉지 충전제용 수지 조성물의 탄성률이, 1,000MPa 이하인 것을 특징으로 한다.Moreover, in the resin composition for sealing fillers of this invention, the elasticity modulus of the said resin composition for sealing fillers is characterized by being 1,000 Mpa or less.

또한, 본 발명의 플립 칩 실장방법에 있어서는, 반도체 칩 및 배선회로기판의 적어도 한쪽의 대향면에, 상기 봉지 충전제용 수지 조성물을 미리 도포 또는 첩부한 후, 상기 반도체 칩의 범프와 상기 배선회로기판의 전극을 가열 압착하는 것 에 의해 상기 반도체 칩 및 배선회로기판을 접합하고, 동시에 상기 반도체 칩 및 배선회로기판의 간극을 상기 봉지 충전제용 수지 조성물에 의해 봉지하는 것을 특징으로 한다.In the flip chip mounting method of the present invention, after the resin composition for sealing filler is applied or pasted to at least one opposing surface of the semiconductor chip and the wiring circuit board, the bumps of the semiconductor chip and the wiring circuit board are applied. The semiconductor chip and the wiring circuit board are bonded to each other by heat-compression bonding of the electrodes, and the gap between the semiconductor chip and the wiring circuit board is sealed by the resin composition for sealing filler.

또한, 본 발명의 플립 칩 실장품에 있어서는, 반도체 칩과 배선회로기판과의 간극에, 상기 봉지 충전제용 수지 조성물이 충전되어 있는 것을 특징으로 한다.In the flip chip package of the present invention, the resin composition for sealing filler is filled in a gap between the semiconductor chip and the wiring circuit board.

발명의 효과Effects of the Invention

본 발명에 의하면, 미리 봉지 충전제를 배치해 두는 플립 칩 실장방법에 있어서, 폴리올레핀계 열가소성 수지 조성물을 사용하는 것에 의해, 도포, 적하 후에 적절한 두께를 유지할 수 있고, 가열 접합할 때에 적절한 유동성을 가져서 반도체 칩과 배선회로기판의 간극을 극간 없이 충전할 수 있고, 접합시의 가열에 의한 분해나 발포가 없고, 적당한 속도로 융해, 고체화하고, 고체화시에 전기 절연성이 높으며, 배선 기판상의 전극에의 부식 요인을 가지지 않고, 고체화시에 부재간의 응력완화 때문에 탄성률이 작고, 상온(25℃)에서의 보관 안정성이 뛰어난 봉지 충전제용 수지 조성물, 및 그것을 사용한 실장방법, 플립 칩 실장품을 제공할 수 있는 효과를 얻는다.According to the present invention, in a flip chip mounting method in which a sealing filler is arranged in advance, by using a polyolefin-based thermoplastic resin composition, an appropriate thickness can be maintained after coating and dropping, and the semiconductor has appropriate fluidity when heated and bonded. The gap between the chip and the wiring circuit board can be filled without gaps, and there is no decomposition or foaming due to the heating at the time of joining, and it melts and solidifies at a moderate speed, has high electrical insulation at the time of solidification, and corrosion to the electrode on the wiring board. It is possible to provide a resin composition for sealing filler having a low elastic modulus and excellent storage stability at room temperature (25 ° C) due to stress relaxation between members at the time of solidification without any factor, and a mounting method using the same, and an effect of providing a flip chip package. Get

도 1은, 봉지 충전제용 수지 조성물을 도포하는 플립 칩 실장방법의 프로세스를 설명하는 반도체 칩 및 배선회로기판의 개략 단면도이다.1 is a schematic cross-sectional view of a semiconductor chip and a wiring circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.

도 2는, 봉지 충전제용 수지 조성물을 도포하는 플립 칩 실장방법의 프로세스를 설명하는 반도체 칩 및 배선회로기판의 개략 단면도이다.2 is a schematic cross-sectional view of a semiconductor chip and a wiring circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.

도 3은, 봉지 충전제용 수지 조성물을 도포하는 플립 칩 실장방법의 프로세스를 설명하는 반도체 칩 및 배선회로기판의 개략 단면도이다.3 is a schematic cross-sectional view of a semiconductor chip and a wiring circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.

도 4는, 봉지 충전제용 수지 조성물을 도포하는 플립 칩 실장방법의 프로세스를 설명하는 반도체 칩 및 배선회로기판의 개략 단면도이다.4 is a schematic cross-sectional view of a semiconductor chip and a wiring circuit board for explaining a process of a flip chip mounting method for applying a resin composition for sealing filler.

도 5는, 시트상 봉지 충전제용 수지 조성물을 첩부하는 플립 칩 실장방법의 프로세스를 설명하는 반도체 칩 및 배선회로기판의 개략 단면도이다.5 is a schematic cross-sectional view of a semiconductor chip and a wiring circuit board for explaining a process of a flip chip mounting method for affixing a resin composition for a sheet-like sealing filler.

도 6은, 시트상 봉지 충전제용 수지 조성물을 첩부하는 플립 칩 실장방법의 프로세스를 설명하는 반도체 칩 및 배선회로기판의 개략 단면도이다.6 is a schematic cross-sectional view of a semiconductor chip and a wiring circuit board for explaining a process of a flip chip mounting method for affixing a resin composition for a sheet-like sealing filler.

도 7은, 시트상 봉지 충전제용 수지 조성물을 첩부하는 플립 칩 실장방법의 프로세스를 설명하는 반도체 칩 및 배선회로기판의 개략 단면도이다.7 is a schematic cross-sectional view of a semiconductor chip and a wiring circuit board for explaining a process of a flip chip mounting method for attaching a resin composition for a sheet-like sealing filler.

도 8은, 본 발명의 실시예에 있어서의 내마이그레이션성 평가용 기판의 개략 평면도이다.8 is a schematic plan view of a substrate for evaluating migration resistance in Examples of the present invention.

도 9는, 본 발명의 실시예에 있어서의 내마이그레이션성 평가의 결과를 나타내는 그래프이다.9 is a graph showing the results of the migration resistance evaluation in the examples of the present invention.

<부호의 설명><Description of the code>

1 필름상 기재1 film base

2 구리배선2 copper wiring

3 금속 도금3 metal plating

4 솔더레지스트4 Solder Resist

5 반도체 칩의 실장 위치5 위치 Semiconductor chip mounting position

6 봉지 충전제용 수지 조성물Resin composition for 6 bag filler

6A 시트상 봉지 충전제용 수지 조성물Resin composition for 6A 'sheet-like sealing filler

10 반도체 칩10 semiconductor chip

11 메탈 포스트11 Metal Post

12 범프12 Bump

15 압압(押壓) 장치15 pressure device

20, 20A 플립 칩 실장품20, 20A flip chip package

30 내마이그레이션성 평가용 기판30 migration resistance board

31 솔더레지스트 미도포 부분31 Solder Resistant

발명을 실시하기Implement the invention 위한 최선의 형태 Best form for

이하, 본 발명에 의한 봉지 충전제용 수지 조성물, 그것을 사용한 플립 칩 실장방법, 및 플립 칩 실장품을 그 절절한 실시형태에 입각하여 상세하게 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, the resin composition for sealing fillers of this invention, the flip chip mounting method using the same, and flip chip mounting article are demonstrated in detail based on the appropriate embodiment.

[봉지 충전제용 수지 조성물][Resin composition for sealing filler]

본 발명은, 미리 봉지 충전제를 배치해 두는 플립 칩 실장방법에 사용하는 봉지 충전제로서, 폴리올레핀계 열가소성 수지를 포함하는 봉지 충전제용 수지 조성물을 제공하는 것이다. 본 발명의 폴리올레핀계 열가소성 수지 조성물은, 몇개의 수지를 적절한 비율로 혼합하는 것에 의해 접합 온도에 적절한 융점을 갖게 하는 것, 목표로 하는 내열성을 갖게 하는 것이 가능하다. 열가소성 수지 조성물은 열에 의한 경화 반응을 일으키지 않기 때문에, 보관 안정성이 뛰어나고, 사용시간의 제한이 없는 것이 된다.This invention provides the resin composition for sealing filler containing a polyolefin thermoplastic resin as a sealing filler used for the flip chip mounting method which arrange | positions a sealing filler previously. The polyolefin thermoplastic resin composition of the present invention can be made to have a suitable melting point at the joining temperature and to have target heat resistance by mixing several resins at an appropriate ratio. Since the thermoplastic resin composition does not cause a curing reaction by heat, the thermoplastic resin composition is excellent in storage stability and there is no limitation in use time.

본 발명의 봉지 충전제용 수지 조성물에 있어서의 폴리올레핀계 열가소성 수지로서는, 예를 들면, 폴리에틸렌, 폴리프로필렌, 폴리옥시메틸렌 등을 들 수 있다. 가열 접합시의 폴리올레핀계 봉지 충전제용 수지 조성물의 유동성, 분해나 발포의 억제, 적절한 융해, 고체화 시간의 설정, 또한, 접합 후의 패키지의 내열성은, 결정성, 비결정성의 폴리올레핀계 열가소성 수지를 혼합함으로써 자유롭게 조정 가능하다. 배선회로기판, 반도체 칩, 솔더레지스트 등의 주변 부재의 선팽창 계수의 차이에 의한 발생 응력완화를 위한 봉지 충전제용 수지 조성물의 저탄성률화에는, 가교 밀도가 낮고, 결정성이 낮은 직쇄상 수지를 사용하는 것이 바람직하다. 상기 특성을 밸런스 좋게 만족할 수 있는 관점으로부터, 폴리프로필렌 수지가 바람직하다.As a polyolefin thermoplastic resin in the resin composition for sealing fillers of this invention, polyethylene, a polypropylene, polyoxymethylene etc. are mentioned, for example. Fluidity, suppression of decomposition and foaming, appropriate melting, setting of solidification time, and heat resistance of the package after bonding are mixed by mixing crystalline and amorphous polyolefin thermoplastic resins in the resin composition for polyolefin encapsulating filler during heat bonding. Freely adjustable Low-crosslinking density and low crystalline linear resin are used to reduce the elastic modulus of the encapsulating filler resin composition for reducing stress caused by the difference in the coefficient of linear expansion of peripheral members such as wiring circuit boards, semiconductor chips and solder resists. It is desirable to. Polypropylene resin is preferable from the viewpoint of satisfactorily satisfying the above characteristics.

폴리올레핀계 열가소성 수지의 함유량은, 봉지 충전제용 수지 조성물의 전체 고형분 양에 대해서, 20~99중량%인 것이 바람직하고, 50~95%중량인 것이 보다 바람직하고, 60~90중량%인 것이 특히 바람직하고, 65~85중량%인 것이 극히 바람직하다. 이 함유량이 20중량% 미만에서는, 내습성이 저하하는 경향이 있고, 99중량%를 넘으면 접착성이 저하하는 경향이 있다.It is preferable that content of a polyolefin thermoplastic resin is 20 to 99 weight% with respect to the total solid content of the resin composition for sealing fillers, It is more preferable that it is 50 to 95% weight, It is especially preferable that it is 60 to 90 weight% And it is extremely preferable that it is 65 to 85 weight%. When this content is less than 20 weight%, there exists a tendency for moisture resistance to fall, and when it exceeds 99 weight%, there exists a tendency for adhesiveness to fall.

상기 폴리올레핀계 열가소성 수지는 25℃에서의 흡수율이 0(제로)을 넘어서 2.5중량% 이하인 것이 바람직하고, 1.0중량% 이하인 것이 보다 바람직하고, 0.1중량% 이하인 것이 특히 바람직하다. 흡수율이 2.5중량%를 넘으면 내마이그레이션성이 저하하는 경향이 있다. 폴리올레핀계 열가소성 수지는, 친수기를 가지지 않기 때문에 흡수성이 낮다고 하는 관점으로부터 특별히 우수하여, 폴리올레핀계 열가소성 수지를 사용하는 것에 의해, 저절로 흡수율을 낮게 할 수 있다. 이들의 폴리올레핀계 열가소성 수지는, 1종을 단독으로 또는 2종 이상을 조합시켜 사용할 수 있다.It is preferable that the water absorption in 25 degreeC of the said polyolefin thermoplastic resin exceeds 0 (zero) and is 2.5 weight% or less, It is more preferable that it is 1.0 weight% or less, It is especially preferable that it is 0.1 weight% or less. When water absorption exceeds 2.5 weight%, there exists a tendency for migration resistance to fall. Since a polyolefin thermoplastic resin does not have a hydrophilic group, it is especially excellent from a viewpoint that water absorption is low, and by using a polyolefin thermoplastic resin, a water absorption can be made low naturally. These polyolefin thermoplastic resins can be used individually by 1 type or in combination of 2 or more types.

또한, 본 발명의 봉지 충전제용 수지 조성물에는, 상기 폴리올레핀계 열가소성 수지 이외의 열가소성 수지를 병용할 수 있다. 폴리올레핀계 열가소성 수지 이외의 열가소성 수지로서는, 예를 들면, 폴리불화비닐리덴, 폴리에스테르, 폴리아크릴로니트릴, 폴리스티렌, 폴리아미드, 폴리이미드, 폴리페닐렌 등을 들 수 있다. 이들의 열가소성 수지는, 사용 조건, 예를 들면 사용 온도에 맞추어, 1종을 단독으로 또는 2종 이상을 조합시켜 사용할 수 있다. 폴리올레핀계 열가소성 수지와 폴리올레핀계 열가소성 수지 이외의 열가소성 수지와의 배합 비율은, 적당히 소망의 비율로 배합할 수 있지만, 봉지 충전제용 수지 조성물의 전체 고형분 양에 대해서, 폴리올레핀계 열가소성 수지의 함유량이 20~99중량%로 되도록 혼합하는 것이 바람직하다.Moreover, thermoplastic resins other than the said polyolefin thermoplastic resin can be used together in the resin composition for sealing fillers of this invention. As thermoplastic resins other than a polyolefin thermoplastic resin, polyvinylidene fluoride, polyester, polyacrylonitrile, polystyrene, polyamide, polyimide, polyphenylene, etc. are mentioned, for example. These thermoplastic resins can be used individually by 1 type or in combination of 2 or more types according to a use condition, for example, use temperature. Although the compounding ratio of a polyolefin thermoplastic resin and thermoplastic resins other than a polyolefin thermoplastic resin can be mix | blended suitably at a desired ratio, content of a polyolefin thermoplastic resin is 20- with respect to the total solid amount of the resin composition for sealing fillers. It is preferable to mix so that it may become 99 weight%.

또한, 본 발명의 봉지 충전제 수지 조성물에는, 접착성을 향상시키는 관점으로부터, 점착성 부여제를 함유시키는 것이 바람직하다. 본 발명에서 사용하는 점착성 부여제는, (1) 폴리올레핀계 열가소성 수지와의 상용성이 좋은 것, (2) 기재와의 접착성이 좋은 것, 및 (3) 열안정성이 좋은 것이면 특별히 제한은 없다. 상용성은, 일반적으로, 일정 조건에서 가열한 후의 탁함이나 상분리의 관찰, 또는 담점(cloud point)을 측정함으로써 판별할 수 있다. 접착성은, 크로스 컷 시험, 또는 기재에 도막 형성 후의 굴곡 시험 등으로부터 판별할 수 있다. 또한, 열안정성은, 색상 변화 또는 점도 변화 등으로부터 판별할 수 있다. 더욱이, 본 발명에서 사용하는 점착성 부여제는, 연화점이 5~180℃인 열가소성 수지가 바람직하다. 접착성, 내열성을 향상할 수 있는 관점으로부터, 점착성 부여제의 연화점은 50~170℃인 것이 보다 바람직하고, 60~160℃인 것이 특히 바람직하다. 연화점은, 환구법(環球法) 등으로 측정 할 수 있다.Moreover, it is preferable to contain the tackifier in the sealing filler resin composition of this invention from a viewpoint of improving adhesiveness. The tackifier used in the present invention is not particularly limited as long as it has good compatibility with (1) polyolefin thermoplastic resin, good adhesion with substrate (2), and good thermal stability (3). . Compatibility can generally be determined by observing haze, phase separation, or cloud point after heating under constant conditions. Adhesiveness can be discriminated from a cross cut test, a bending test after coating film formation, etc. in a base material. In addition, thermal stability can be discriminated from color change, viscosity change, and the like. Moreover, the thermoplastic resin whose softening point is 5-180 degreeC is preferable for the tackifier used by this invention. From the viewpoint of improving the adhesiveness and heat resistance, the softening point of the tackifier is more preferably 50 to 170 ° C, and particularly preferably 60 to 160 ° C. The softening point can be measured by a ring ball method or the like.

점착성 부여제로서는, 예를 들면, 로진계 수지, 테르펜계 수지, 테르펜-페놀수지, 지방족계 석유수지, 방향족계 석유수지, 디시클로펜타디엔계 석유수지, 쿠마론-인덴수지, 스티렌계 수지, 이소프렌계 수지 등을 들 수 있다. 칩 및 플렉서블 기판과의 점착성을 향상할 수 있는 관점으로부터, 로진계 수지, 테르펜계 수지, 테르펜-페놀수지, 디시클로펜타디엔계 석유수지가 바람직하다. 점착성 부여제의 함유량은, 봉지 충전제용 수지 조성물의 전체 고형분 양에 대해서, 1~60중량%인 것이 바람직하고, 5~50중량%인 것이 보다 바람직하고, 10~40중량%인 것이 특히 바람직하다. 이 함유량이 1중량% 미만에서는, 접착성이 저하하는 경향이 있어, 60중량%를 넘으면 물러지기 쉽고, 크랙 등의 불량이 발생하는 경향이 있다.Examples of the tackifier include rosin-based resins, terpene-based resins, terpene-phenolic resins, aliphatic petroleum resins, aromatic petroleum resins, dicyclopentadiene-based petroleum resins, coumarone-indene resins, styrene resins, Isoprene-based resins and the like. From the viewpoint of improving the adhesiveness with the chip and the flexible substrate, rosin-based resins, terpene-based resins, terpene-phenol resins, and dicyclopentadiene-based petroleum resins are preferable. It is preferable that it is 1-60 weight% with respect to the total solid amount of the resin composition for sealing fillers, as for content of a tackifier, it is more preferable that it is 5-50 weight%, and it is especially preferable that it is 10-40 weight%. . When this content is less than 1 weight%, there exists a tendency for adhesiveness to fall, and when it exceeds 60 weight%, it will fall easily and there exists a tendency for defects, such as a crack, to generate | occur | produce.

또한, 본 발명의 봉지 충전제 수지 조성물에는, 내열 안정성 등의 특성 향상을 위해, 다종의 첨가제를 배합할 수 있다. 이와 같은 첨가제로서는, 예를 들면, 산화방지제, 소포제, 실란커플링제, 무기 혹은 유기 필러, 색소 등을 들 수 있다.Moreover, many kinds of additives can be mix | blended with the sealing filler resin composition of this invention for the improvement of characteristics, such as heat stability. As such an additive, antioxidant, an antifoamer, a silane coupling agent, an inorganic or organic filler, a pigment | dye, etc. are mentioned, for example.

전기 절연성은 교류 절연의 경우, 봉지 충전제용 수지 조성물의 유전률과의 상관이 있어, 봉지 충전제용 수지 조성물에는 극성이 낮은 원료를 사용하는 것이 바람직하다. 또한, 고온 고습하에서의 연속 전압인가 시험에 있어서 배선회로기판의 전극 부식은, 봉지 충전제용 수지 조성물의 흡수성이나 습도와의 상관관계가 있기 때문에, 수분과의 친화성이 낮은 극성기가 적은 수지를 사용하는 것이 바람직하다.In the case of AC insulation, electrical insulation has a correlation with the dielectric constant of the resin composition for sealing filler, and it is preferable to use the raw material with low polarity for the resin composition for sealing filler. In the continuous voltage application test under high temperature and high humidity, the electrode corrosion of the wiring circuit board is correlated with the absorbency and humidity of the resin composition for encapsulating filler, so that a resin having a small polar group having low affinity with moisture is used. It is preferable.

또한, 본 발명의 봉지 충전제용 수지 조성물은, 내마이그레이션성을 향상시킨다는 관점으로부터, 봉지 충전제용 수지 조성물 중의 염소이온 농도가, 0(제로)을 넘어 10ppm 이하인 것이 바람직하다. 또한, 마찬가지로 다른 이온성 불순물의 함유량이 적은 것이 바람직하다. 더욱이 염소이온 농도는, 봉지 충전제용 수지 조성물 중, 5ppm 이하인 것이 바람직하고, 2ppm 이하인 것이 보다 바람직하다.Moreover, it is preferable that the chlorine ion concentration in the resin composition for sealing fillers is 10 ppm or less beyond 0 (zero) from the viewpoint of improving migration resistance of the resin composition for sealing fillers of this invention. Similarly, it is preferable that the content of other ionic impurities is small. Moreover, it is preferable that it is 5 ppm or less in the resin composition for sealing fillers, and, as for chlorine ion concentration, it is more preferable that it is 2 ppm or less.

봉지 충전제용 수지 조성물 중의 염소이온 농도를 10ppm 이하로 하기 위해서는, 봉지 충전제용 수지를 합성할 때의 원료 및 촉매 등에 염소원자를 포함하는 것을 사용하지 않거나 또는 사용량을 낮은 양으로 함으로써 달성할 수 있다. 염소이온 이외의 이온성 불순물로서는, Na+, Li+, K+, Ca2 +, Mg2 +, Ba2 +, Br-, SO4 2 -, I- 등을 들 수 있다.In order to make chlorine ion concentration in the resin composition for sealing fillers into 10 ppm or less, it can achieve by not using a thing containing a chlorine atom in the raw material, a catalyst, etc. at the time of synthesize | combining resin for sealing fillers, or using a low amount. Examples of ionic impurities other than chloride ion, Na +, Li +, K +, Ca 2 +, Mg 2 +, Ba 2 +, Br - , and the like -, SO 4 2 -, I .

또한, 본 발명의 봉지 충전제용 수지 조성물은, 탄성률이 0(제로)을 넘어 1,000MPa 이하인 것이 바람직하고, 500MPa 이하인 것이 보다 바람직하고, 100MPa 이하인 것이 특히 바람직하다. 또한, 선팽창 계수가 300ppm/℃ 이하인 것이 바람직하고, 250ppm/℃ 이하인 것이 보다 바람직하고, 200ppm/℃ 이하인 것이 특히 바람직하다. 이 탄성률이 1,000MPa를 넘고, 선팽창 계수가 300ppm/℃를 넘으면 플립 칩 실장품을 구성하는 원료 사이에 응력이 발생하여, 크랙이나 박리의 원인이 되는 경향이 있다. 상기 탄성률이나 선팽창 계수는, 봉지 충전제용 수지의 중합법이나 사용하는 촉매, 입체규칙성 등을 조정하는 것에 의해, 바람직한 탄성률 및 선팽창 계수를 선택할 수 있다. 본 발명에 의한 봉지 충전제용 수지 조성물은, 플렉서블 배선판에 사용하는 것이 바람직하다.Moreover, it is preferable that the elasticity modulus exceeds 1,000 (zero), and is 1,000 MPa or less, It is more preferable that it is 500 MPa or less, It is especially preferable that it is 100 MPa or less of the resin composition for sealing fillers of this invention. Moreover, it is preferable that a linear expansion coefficient is 300 ppm / degrees C or less, It is more preferable that it is 250 ppm / degrees C or less, It is especially preferable that it is 200 ppm / degrees C or less. When this elastic modulus exceeds 1,000 MPa and a linear expansion coefficient exceeds 300 ppm / degreeC, stress will generate | occur | produce between the raw materials which comprise a flip chip package, and it will tend to cause a crack or peeling. The said elastic modulus and a linear expansion coefficient can select a preferable elasticity modulus and a linear expansion coefficient by adjusting the polymerization method of resin for sealing fillers, the catalyst to be used, stereoregularity, etc. It is preferable to use the resin composition for sealing fillers which concerns on this invention for a flexible wiring board.

[플립 칩 실장방법 및 플립 칩 실장품][Flip chip mounting method and flip chip mounting product]

다음에, 본 발명에 의한 플립 칩 실장방법에 관하여 설명한다. 도 1~도 4는, 배선회로기판상에 상술한 봉지 충전제용 수지 조성물을 도포하여 반도체 칩 및 배선회로기판을 접합하는 플립 칩 실장방법의 프로세스를 설명하는 개략 단면도이다.또, 각 도면 중, 동일 부호는 동일 또는 상당 부분을 나타낸다.Next, a flip chip mounting method according to the present invention will be described. 1-4 are schematic sectional drawing explaining the process of the flip chip mounting method which apply | coats the resin composition for sealing filler mentioned above on a wiring circuit board, and joins a semiconductor chip and a wiring circuit board. In addition, in each figure, The same symbols represent the same or equivalent parts.

도 1에 나타낸 바와 같이, 배선회로기판으로서의 필름상 기재(1)의 상면(上面)에는, 반도체 칩이 실장되는 부분 등을 제외하고 구리배선(2)이 형성되어 있고, 이 구리배선(2)상의 소정 부분에는 주석 또는 금 등의 금속 도금(3)이 실시되어 있다. 이 금속 도금(3)으로서는, 주석 또는 금도금을 최적으로 사용할 수 있지만, 다른 금속의 도금이어도 좋고, 마찬가지로 사용할 수 있다. 더욱이 접합 부분 이외의 패턴 등의 보호막으로서, 내열성 코팅재인 솔더레지스트(4)가 구리배선(2)상에 형성되어 있다.As shown in FIG. 1, the copper wiring 2 is formed in the upper surface of the film-form base material 1 as a wiring circuit board except the part in which a semiconductor chip is mounted, etc., and this copper wiring 2 Metal plating 3, such as tin or gold, is given to the predetermined part of an image. As this metal plating 3, although tin or gold plating can be used optimally, plating of other metal may be sufficient and it can be used similarly. Further, as a protective film such as a pattern other than the bonded portion, a solder resist 4 that is a heat resistant coating material is formed on the copper wiring 2.

다음에, 도 2에 나타낸 바와 같이, 이와 같은 필름상 기재(1)의 반도체 칩이 실장되는 실장 위치(5)를 덮어, 봉지 충전제용 수지 조성물(6)을 도포한다. 봉지 충전제용 수지 조성물(6)은, 반도체 칩과 필름상 기재(1)와의 거리, 반도체 칩의 크기 등에 따라서, 소망의 두께, 형상으로 도포할 수 있다. 혹은, 봉지 충전제용 수지 조성물(6)을 필름상 기재(1)의 반도체 칩이 실장되는 실장 위치(5)에 적하하여도 좋고, 또는 후술하는 바와 같이 시트상의 봉지 충전제용 수지 조성물을 첩부하는 것에 의해 소정의 실장 위치(5)에 배치할 수 있고, 이들의 도포, 적하, 첩부의 방법이나 조건은, 특별히 한정되지 않는다.Next, as shown in FIG. 2, the mounting position 5 in which the semiconductor chip of such a film-form base material 1 is mounted is covered, and the resin composition 6 for sealing fillers is apply | coated. The resin composition 6 for sealing filler can be apply | coated in desired thickness and shape according to the distance of a semiconductor chip and the film-form base material 1, the magnitude | size of a semiconductor chip, etc. Or the resin composition 6 for sealing filler may be dripped at the mounting position 5 in which the semiconductor chip of the film-form base material 1 is mounted, or as affixing the resin composition for sheet-like sealing filler as mentioned later. It can arrange | position to predetermined mounting position 5 by these, and the method and conditions of these application | coating, dripping, and sticking are not specifically limited.

도포하는 봉지 충전제용 수지 조성물(6)의 두께는, 일반적으로 배선의 높이 등에 의존하지만, 약 50~70㎛이다. 일반적인 도포, 적하법으로서는 디스펜스를 들 수 있고, 도포 전의 봉지 충전제용 수지 조성물을 용융 온도까지 가온해 둠으로써 도포가 가능하게 된다. 가열 온도로서는, 140℃~250℃가 바람직하고, 160℃~220℃가 보다 바람직하다.Although the thickness of the resin composition 6 for sealing filler to apply | coat depends on the height of wiring etc. generally, it is about 50-70 micrometers. Dispensing is mentioned as a general coating and dropping method, and application | coating becomes possible by heating the resin composition for sealing fillers before application | coating to melt temperature. As heating temperature, 140 degreeC-250 degreeC is preferable, and 160 degreeC-220 degreeC is more preferable.

반도체 칩(10)에는, 도 3에 나타낸 바와 같이, 그 하면(下面)에 메탈 포스트(11)를 개재하여 범프(12)가 형성되어 있다. 범프(12)가 형성되어 있는 반도체 칩(10)의 하면을 금속 도금(3)이 형성되어 있는 필름상 기재(1)의 상면에 대향시키고, 소정 온도로 가열하면서 이들의 반도체 칩(10)과 필름상 기재(1)를 압압 장치(15)에 의해서 압압한다. 이 때, 초음파 등을 인가하여 접합해도 좋으며, 이와 같은 초음파 접합에 의해서 균일한 봉지 충전제용 수지 조성물(6)의 층이 형성되고, 실장 상태의 불균일을 억제할 수 있다.As shown in FIG. 3, the bump 12 is formed in the semiconductor chip 10 via a metal post 11 on its lower surface. The lower surface of the semiconductor chip 10 on which the bumps 12 are formed is opposed to the upper surface of the film-form substrate 1 on which the metal plating 3 is formed, and the semiconductor chips 10 and these semiconductor chips 10 are heated at a predetermined temperature. The film-form base material 1 is pressed by the press apparatus 15. FIG. Under the present circumstances, you may bond by applying an ultrasonic wave etc., The layer of the resin composition 6 for sealing fillers is formed by such an ultrasonic bonding, and the nonuniformity of a mounting state can be suppressed.

이상과 같이 하여, 도 4에 나타낸 바와 같이, 반도체 칩(10)의 범프(12)와 필름상 기재(1)의 금속 도금(3)이 접합되고, 또한 범프(12)와 금속 도금(3)과의 접합부의 근방을 봉지 충전제용 수지 조성물(6)이 충전, 봉지된 플립 칩 실장품(20)을 제조할 수 있다.As described above, as shown in FIG. 4, the bump 12 of the semiconductor chip 10 and the metal plating 3 of the film-like substrate 1 are bonded to each other, and the bump 12 and the metal plating 3 are bonded to each other. The flip chip mounting article 20 in which the resin composition 6 for sealing filler was filled and sealed in the vicinity of the junction part with the sealing can be manufactured.

다음에, 반도체 칩(10)과 필름상 기재(1)와의 거리, 반도체 칩의 크기 등에 따라서, 소망의 두께, 형상으로 성형한 시트상의 봉지 충전제용 수지 조성물을 첩부하는 경우에 관하여 설명한다. 도 5~도 7은, 배선회로기판상에 시트상 봉지 충전제용 수지 조성물을 첩부하여 반도체 칩 및 배선회로기판을 접합하는 플립 칩 실장방법의 프로세스를 설명하는 개략 단면도이다.Next, the case where the resin composition for sheet-shaped sealing fillers shape | molded to desired thickness, a shape, etc. according to the distance of the semiconductor chip 10 and the film-form base material 1, a semiconductor chip, etc. is stuck is demonstrated. 5-7 is a schematic sectional drawing explaining the process of the flip chip mounting method which affixes the resin composition for sheet type sealing fillers on a wiring circuit board, and joins a semiconductor chip and a wiring circuit board.

우선, 도 5에 나타낸 바와 같이, 필름상 기재(1)에 있어서 반도체 칩의 실장 위치(5)를 덮어, 시트상 봉지 충전제용 수지 조성물(6A)을 첩부한다. 첩부법으로서는, 열압착을 들 수 있고, 임의의 형상의 봉지 충전제용 수지 조성물 시트를 제작하고, 반도체 칩, 또는 배선회로기판에 가온하면서 열압착함으로써 봉지 충전제용 수지 조성물층을 형성할 수 있다. 가열 온도로서는, 50℃~160℃가 바람직하고, 80℃~130℃가 보다 바람직하다. 또, 도 5에서는, 시트상 봉지 충전제용 수지 조성물(6A)이 직접 솔더레지스트(4)에 접하고 있지만, 도 5에서는 일례를 도시한 것으로, 도시한 예에 한정되지 않고 여러 가지 태양을 포함한다.First, as shown in FIG. 5, the mounting position 5 of a semiconductor chip is covered in the film-form base material 1, and the resin composition 6A for sheet-like sealing fillers is stuck. As a sticking method, a thermocompression bonding is mentioned, The resin composition layer for sealing fillers can be formed by producing the resin composition sheet for sealing fillers of arbitrary shape, and thermocompression bonding, heating to a semiconductor chip or a wiring circuit board. As heating temperature, 50 degreeC-160 degreeC is preferable, and 80 degreeC-130 degreeC is more preferable. In addition, although the resin composition for sheet-like sealing filler 6A directly contact | connects the soldering resist 4 in FIG. 5, it shows an example in FIG. 5, It is not limited to the example shown and includes various aspects.

다음에, 도 6에 나타낸 바와 같이, 범프(12)가 형성되어 있는 반도체 칩(10)의 하면을 금속 도금(3)이 형성되어 있는 필름상 기재(1)의 상면에 대향시키고, 소정 온도로 가열하면서 이들의 반도체 칩(10)과 필름상 기재(1)를 압압 장치(15)에 의해서 압압한다. 이 때, 초음파 접합을 행해도 좋은 점은, 도 3의 경우와 같다.Next, as shown in FIG. 6, the lower surface of the semiconductor chip 10 in which the bump 12 is formed is opposed to the upper surface of the film-form base material 1 in which the metal plating 3 is formed, and it is made into the predetermined temperature. These semiconductor chips 10 and the film-form base material 1 are pressed by the press apparatus 15, heating. At this time, the point which may perform ultrasonic bonding is the same as that of the case of FIG.

이상과 같이 하여, 도 7에 나타낸 바와 같이, 반도체 칩(10)의 범프(12)와 필름상 기재(1)의 금속 도금(3)이 접합되고, 또한 범프(12)와 금속 도금(3)과의 접합부의 근방을 시트상 봉지 충전제용 수지 조성물(6A)로 봉지된 플립 칩 실장품(20A)을 제조할 수 있다.As described above, as shown in FIG. 7, the bump 12 of the semiconductor chip 10 and the metal plating 3 of the film-like substrate 1 are bonded to each other, and the bump 12 and the metal plating 3 are bonded to each other. The flip chip package 20A sealed in the vicinity of the junction part with the resin composition 6A for sheet-like sealing filler can be manufactured.

본 발명에 의한 플립 칩 실장방법에 있어서는, 본 발명의 봉지 충전제용 수지 조성물에 사용하는 열가소성 수지가 안정성이 뛰어나기 때문에, 반도체 칩 또는 배선회로기판에 미리 봉지 충전제용 수지 조성물을 도포, 적하, 첩부한 후, 반도체 칩과 배선회로기판과의 가열 접합까지의 방치 시간에 제한은 없다. 또한, 본 발명의 봉지 충전제용 수지 조성물을 사용한 경우에는, 수지 조성물 봉지 충전제를 도포, 적하 또는 첩부한 후의 접합 공정과의 방치 시간의 제약이 없게 된다. 또한, 일반적인 열경화성 수지에 필요한 접합 후의 애프터큐어가 필요 없기 때문에, 공정을 단축할 수 있다.In the flip chip mounting method according to the present invention, since the thermoplastic resin used in the resin composition for sealing filler of the present invention is excellent in stability, the resin composition for sealing filler is applied, dipped, and pasted onto a semiconductor chip or a wiring circuit board in advance. Thereafter, there is no limitation on the leaving time until the heat bonding between the semiconductor chip and the wiring circuit board. Moreover, when the resin composition for sealing fillers of this invention is used, there is no restriction | limiting of the leaving time with the bonding process after apply | coating, dripping, or sticking a resin composition sealing filler. Moreover, since the after-cure after joining required for a general thermosetting resin is unnecessary, a process can be shortened.

이하에, 본 발명을 실시예에 근거하여 보다 구체적으로 설명한다. 다만, 본 발명은 실시예에 의해 전혀 한정되지 않는다.EMBODIMENT OF THE INVENTION Below, this invention is demonstrated more concretely based on an Example. However, this invention is not limited at all by an Example.

[폴리올레핀계 열가소성 수지의 조제][Preparation of polyolefin thermoplastic resin]

비결정성 폴리프로필렌 수지(상품명:렉스탁2780, 한트만사제) 56중량부와, 비결정성 폴리프로필렌 수지(상품명:베스트프라스트792, 데그사사제) 25중량부, 및 결정성 폴리프로필렌 수지(상품명:S13B, 미츠이스미토모 폴리올레핀사제) 19중량부를 180℃에서 용융 혼합하여, 폴리프로필렌 수지를 얻었다.56 parts by weight of amorphous polypropylene resin (brand name: Rextak 2780, manufactured by Hantman Co., Ltd.), 25 parts by weight of amorphous polypropylene resin (brand name: BestPast 792, manufactured by Degsa Co., Ltd.), and crystalline polypropylene resin (brand name) : S13B, Mitsui Sumitomo Polyolefin Co., Ltd.) 19 weight part was melt-mixed at 180 degreeC, and the polypropylene resin was obtained.

실시예Example 1 One

상기 폴리프로필렌 수지 80중량%와 테르펜-페놀수지(상품명:YS폴리스터T160, 야스하라케미컬사제) 20중량%에, 산화방지제(상품명:일가녹스HP2251, 시바ㆍ스페셜리티ㆍ케미컬즈사제)를 전체 수지의 총량에 대해서 2중량% 배합한 봉지 충전제 용 수지 조성물을 200℃에서 용융시켜, 각 평가용 시험편을 제작했다.To 80% by weight of the above polypropylene resin and 20% by weight of a terpene-phenol resin (trade name: YS Polyster T160, manufactured by Yashara Chemical Co., Ltd.), an antioxidant (trade name: Ilganox HP2251, manufactured by Ciba Specialty Chemicals Co., Ltd.) The resin composition for sealing fillers which mix | blended 2 weight% with respect to the total amount of were melt | dissolved at 200 degreeC, and each test piece for evaluation was produced.

실시예Example 2 2

상기 폴리프로필렌 수지 60중량%와, 테르펜-페놀수지(상품명:YS폴리스터T160, 야스하라케미컬사제) 40중량%에, 산화방지제(상품명:일가녹스HP2251, 시바ㆍ스페셜리티ㆍ케미컬즈사제)를 전체 수지의 총량에 대해서 2중량% 배합한 봉지 충전제 용 수지 조성물을 200℃에서 용융시켜, 각 평가용 시험편을 제작했다.To 60 weight% of said polypropylene resins, and 40 weight% of terpene phenol resins (brand name: YS Polyster T160, Yashara Chemical Co., Ltd.), antioxidant (brand name: Iganox HP2251, Ciba specialty chemicals company make) The resin composition for sealing filler mix | blended 2 weight% with respect to the total amount of resin was melted at 200 degreeC, and each test piece for evaluation was produced.

실시예Example 3 3

상기 폴리프로필렌 수지 90중량%와, 테르펜-페놀수지(상품명:YS폴리스터T160, 야스하라케미컬사제) 10중량%에, 산화방지제(상품명:일가녹스HP2251, 시바ㆍ스페셜리티ㆍ케미컬즈사제)를 전체 수지의 총량에 대해서 2중량% 배합한 봉지 충전제 용 수지 조성물을 200℃에서 용융시켜, 각 평가용 시험편을 제작했다.To 90 weight% of said polypropylene resins, and 10 weight% of terpene-phenol resins (brand name: YS Polyster T160, Yashara Chemical Co., Ltd.), antioxidant (brand name: Ilganox HP2251, Ciba specialty chemicals company make) is whole. The resin composition for sealing filler mix | blended 2 weight% with respect to the total amount of resin was melted at 200 degreeC, and each test piece for evaluation was produced.

실시예Example 4 4

상기 폴리프로필렌 수지 80중량%와 디시클로펜타디엔계 석유수지(상품명:에스코렛트5340, 토넥스사제) 20중량%에, 산화방지제(상품명:일가녹스HP2251, 시바ㆍ스페셜리티ㆍ케미컬즈사제)를 전체 수지의 총량에 대해서 2중량% 배합한 봉지 충전제용 수지 조성물을 200℃에서 용융시켜, 각 평가용 시험편을 제작했다.To 80% by weight of the above polypropylene resin and 20% by weight of dicyclopentadiene-based petroleum resin (trade name: Escoret 5340, manufactured by Tonex), antioxidants (trade name: Ilganox HP2251, manufactured by Ciba Specialty Chemicals) The resin composition for sealing filler mix | blended 2 weight% with respect to the total amount of resin was melted at 200 degreeC, and each test piece for evaluation was produced.

비교예Comparative example 1 One

폴리아미드계 열가소성 수지 조성물(상품명:하이본XHO55-6, 히다치화성 폴리머주식회사제)을 200℃에서 용융시켜(점도 3Paㆍs), 평가용 수지 조성물로 했다.The polyamide-based thermoplastic resin composition (trade name: Hibon XHO55-6, manufactured by Hitachi Chemical Polymer Co., Ltd.) was melted at 200 ° C. (viscosity 3 Pa · s) to obtain a resin composition for evaluation.

비교예Comparative example 2 2

스티렌-부타디엔계 고무 열가소성 수지 조성물(상품명:하이본9610, 히다치화성 폴리머주식회사제)을 180℃에서 용융시켜(점도 3Paㆍs), 평가용 수지 조성물로 했다.The styrene-butadiene rubber thermoplastic resin composition (brand name: Hibon 9610, the Hitachi Chemical Polymer Co., Ltd.) was melted at 180 degreeC (viscosity 3Pa * s), and it was set as the resin composition for evaluation.

비교예Comparative example 3 3

에폭시계 열경화성 수지 조성물 봉지 충전제(상품명:RC281C, 히다치화성공업주식회사제)에 관하여 각종 시험용으로 적절한 형상으로 도포하고, 150℃에서 2시간 경화하여, 평가용 시험편(필름)을 제작했다.About the epoxy type thermosetting resin composition sealing filler (brand name: RC281C, the product made by Hitachi Chemical Co., Ltd.), it apply | coated in the shape suitable for various tests, and it hardened | cured at 150 degreeC for 2 hours, and produced the test piece (film) for evaluation.

비교예Comparative example 4 4

상기 폴리프로필렌 수지에, 산화방지제를 전체 수지의 총량에 대해서 2중량% 배합한 봉지 충전제용 수지 조성물을 제작하고, 180℃에서 용융시켜, 각 평가용 시험편을 제작했다.To the said polypropylene resin, the resin composition for sealing filler which mix | blended 2 weight% of antioxidants with respect to the total amount of all resin was produced, it melt | dissolved at 180 degreeC, and each test piece for evaluation was produced.

[평가용 시험편(필름)의 제작][Production of Evaluation Test Film (Film)]

실시예 1~4 및 비교예 1, 2 및 4의 평가용 수지 조성물의 필름(평가용 시험편)은, 내열성 테이프로 스페이서를 설치하여, 이형처리를 실시한 유리판을 핫 플레이트상에서 후에 기재한 소정의 온도로 가열하고, 유리판상에서 시료를 용융시켜, 유리봉을 사용하여 제작했다.Films (test pieces for evaluation) of the resin compositions for evaluation of Examples 1 to 4 and Comparative Examples 1, 2, and 4 were provided with a spacer with a heat resistant tape, and predetermined temperatures described later on a hot plate of a glass plate subjected to a release treatment. Was heated, the sample was melted on a glass plate, and produced using a glass rod.

실시예 1~4, 비교예 1~4의 평가용 수지 조성물 및 평가용 시험편(필름)을 사 용한 인장탄성률, 내마이그레이션성, 흡수율, 이온성 불순물, 밀착성의 측정 및 평가는, 이하와 같이 행하였다. 결과를 표 1 및 도 9에 나타낸다.Measurement and evaluation of tensile modulus, migration resistance, water absorption rate, ionic impurities, and adhesiveness using the resin compositions for evaluation and the test pieces (film) for evaluation in Examples 1 to 4 and Comparative Examples 1 to 4 were performed as follows. It was. The results are shown in Table 1 and FIG. 9.

[인장탄성률]Tensile Modulus

평가용 수지 조성물의 인장탄성률은, 수지를 약 50㎛의 필름상으로 한 후에 폭 1cm, 길이 4cm의 단책상으로 잘라낸 평가용 시험편에 관해서, 시마즈제작소제 오토그래프 AGF-5KN를 사용하여, 온도 23℃, 척(chuck)간 20㎜, 인장속도 5mm/분의 조건에서 측정했다.The tensile elasticity modulus of the resin composition for evaluation used the Shimadzu Corporation Autograph AGF-5KN with respect to the test piece for evaluation which cut out the resin into the film form of about 50 micrometers, and cut out into the step shape of 1 cm in width and 4 cm in length, and temperature 23 It measured on condition of 20 degreeC, 20 mm of chucks, and 5 mm / min of tensile speeds.

[선팽창 계수][Linear expansion coefficient]

평가용 수지 조성물의 선팽창 계수는, 수지 조성물을 두께 약 50㎛의 필름 상으로 한 후에 폭 4mm, 길이 20mm의 단책상으로 잘라낸 평가용 시험편에 관해서, 리가크제 서모플러스TMA8310을 사용하여, 척간거리 10mm, 승온속도 10℃/분, 하중 3g으로 측정했다.The linear expansion coefficient of the resin composition for evaluation used the Rigak thermoplus TMA8310 about the test piece for evaluation which cut out the resin composition into the film shape of thickness about 50 micrometers, and cut out into the single-step shape of width 4mm and length 20mm. , The temperature rising rate was 10 ° C./min, and the load was measured at 3 g.

[흡수율][Absorption rate]

평가용 수지 조성물의 흡수율은, 75mm×75mm의 유리판에 약 0.5g(고형분)의 수지 조성물을 도포하고, 25℃의 물에 24시간 침지하고, 중량의 증가율을 측정하여 다음과 같이 산출했다. 즉, 흡수율을, 흡수율={(W-0.5)/0.5}×100(%)(W:25℃의 물에 24시간 침지한 후의 중량(g))으로부터 구했다.The water absorption rate of the resin composition for evaluation apply | coated about 0.5 g (solid content) resin composition to the glass plate of 75 mm x 75 mm, immersed in 25 degreeC water for 24 hours, measured the increase rate of weight, and computed it as follows. That is, the water absorption was calculated | required from the water absorption rate {{W-0.5) /0.5} x100 (%) (weight (g) after immersion in water of 25 degreeC for 24 hours).

[이온성 불순물][Ionic Impurities]

평가용 수지 조성물의 이온성 불순물 함유량은, 잘 세정한 내압 용기에 수지 조성물 약 2g, 순수 약 18g를 넣어, 121℃/100%RH의 환경에서 20시간 추출하고, 음 이온 크로마토그래프(DX-120:다이오넥스제, 컬럼AS12A)를 사용하여 측정했다.The ionic impurity content of the resin composition for evaluation puts about 2 g of resin compositions and about 18 g of pure waters in the well pressure-resistant container, and it extracts in the environment of 121 degreeC / 100% RH for 20 hours, and is negative ion chromatograph (DX-120). : It measured using Dionex, column AS12A).

[내마이그레이션성][Migration Resistance]

평가용 수지 조성물의 내마이그레이션성은, 도 8에 나타낸 내마이그레이션성 평가용 기판을 사용하여 평가했다. 즉, 도 8에 나타낸 바와 같이, 플렉서블 기판(두께 25㎛의 폴리이미드 기재(1)상에 두께 10㎛의 주석도금 구리배선(2)을 형성 한 기판, 배선 30㎛ 피치)에 솔더레지스트(4)(상품명:SN-9000, 히다치화성공업주식회사제)를 도포하고, 배선 표면에 평가용 수지 조성물(6)을 더 도포하여 샘플을 제작하고, 길이 30mm, 폭 5mm로 잘라내어 내마이그레이션성 평가용 기판(30)으로 했다. 또, 도 8 중, 부호 31은 솔더레지스트(4)를 도포하고 있지 않은 솔더레지스트 미도포 부분을 나타내고 있다. 얻어진 내마이그레이션성 평가용 기판(30)에 관하여, 이온마이그레이션 테스터(상품명:MIG-8600, IMV사제)를 사용하여, 11O℃/85%RH/60V의 조건에서 내마이그레이션성을 평가했다. 또한, 내마이그레이션성의 평가 결과를 도 9에 나타낸다.Migration resistance of the resin composition for evaluation was evaluated using the board | substrate for migration resistance evaluation shown in FIG. That is, as shown in Fig. 8, a solder resist 4 is placed on a flexible substrate (a substrate having a tin-plated copper wiring 2 having a thickness of 10 µm formed on a polyimide substrate 1 having a thickness of 25 µm, a pitch of 30 µm). ) (Brand name: SN-9000, manufactured by Hitachi Chemical Co., Ltd.), the resin composition 6 for evaluation was further applied to the wiring surface to prepare a sample, cut into a length of 30 mm and a width of 5 mm, and a substrate for migration resistance evaluation. It was set to 30. In addition, in FIG. 8, the code | symbol 31 has shown the non-coated solder resist part which has not apply | coated the soldering resist 4. About the obtained migration resistance evaluation board | substrate 30, migration resistance was evaluated on the conditions of 110 degreeC / 85% RH / 60V using the ion migration tester (brand name: MIG-8600, IMV Corporation make). Moreover, the evaluation result of migration resistance is shown in FIG.

[밀착성][Adhesiveness]

평가용 수지 조성물의 밀착성 평가는, 내마이그레이션성 평가 후의 샘플을 90도로 접어 구부렸을 때의 상태를 육안으로 관찰하여 다음의 기준에 의해 평가했다. 즉, 표 1 중, ○기호는 기재로부터 수지 조성물이 박리하지 않는 상태를 나타내고, ×기호는 기재로부터 수지 조성물이 박리한 상태를 나타낸다.The adhesive evaluation of the resin composition for evaluation observed visually the state when the sample after migration resistance evaluation was folded at 90 degree | times, and evaluated by the following reference | standard. That is, in Table 1, (circle) symbol shows the state which resin composition did not peel from a base material, and x symbol shows the state which resin composition peeled from a base material.

[표 1]Table 1

Figure 112008009807848-PCT00001
Figure 112008009807848-PCT00001

실시예 1의 폴리올레핀계의 열가소성 수지 조성물은, 비교예 3의 에폭시계 열경화성 수지 조성물에 비하여 저탄성을 나타내고, 선팽창 계수를 고려에 넣더라도, 응력완화에 있어서 유리하다. 비교예 3의 에폭시계 열경화성 수지 조성물 및 비교예 4의 폴리프로필렌 수지는, 접어 구부렸을 때에 용이하게 단부로부터 박리 했다. 실시예 1 및 실시예 2의 폴리올레핀계 열가소성 수지 조성물은, 가장 낮은 흡수율을 나타냈다. 비교예 2는 다른 수지 조성물에 비하여 이온성 불순물을 많이 포함하고 있었다. 이들 평가한 물성은 내마이그레이션성에 영향을 미치는 인자로서 생각할 수 있다.The polyolefin-based thermoplastic resin composition of Example 1 exhibits low elasticity compared to the epoxy-based thermosetting resin composition of Comparative Example 3, and is advantageous in stress relaxation even if a linear expansion coefficient is taken into consideration. The epoxy-type thermosetting resin composition of the comparative example 3 and the polypropylene resin of the comparative example 4 peeled easily from the edge part when it was bent and folded. The polyolefin thermoplastic resin compositions of Examples 1 and 2 exhibited the lowest water absorption. Comparative Example 2 contained more ionic impurities than other resin compositions. These evaluated physical properties can be considered as a factor influencing migration resistance.

또한, 도 9에 나타낸 바와 같이, 실시예 1(도면 중, 곡선 A로 나타낸다)은 전술한 특성이 뛰어나기 때문에, 양호한 내마이그레이션성을 나타냈다. 비교예 1(도면 중, 곡선 B로 나타낸다)은 흡수율이 높기 때문에, 비교예 2(도면 중, 곡선 C로 나타낸다)는 이온성 불순물이 높기 때문에, 비교예 3(도면 중, 곡선 D로 나타낸다)은 탄성률이 높고 밀착성이 낮기 때문에 내마이그레이션성이 저하했다. 또, 비교예 1의 측정 결과에 의한 그래프는, 세로축과 거의 같은 형상이었다.In addition, as shown in FIG. 9, Example 1 (shown by the curve A in the figure) was excellent in the above-described characteristics, and thus exhibited good migration resistance. Since Comparative Example 1 (indicated by curve B in the drawing) has high water absorption, Comparative Example 2 (indicated by curve C in the drawing) has high ionic impurities, and therefore, Comparative Example 3 (indicated by curve D in the drawing) Since the elastic modulus was high and the adhesiveness was low, the migration resistance fell. Moreover, the graph by the measurement result of the comparative example 1 was almost the same shape as the vertical axis.

이상과 같이, 본 발명에 따른 봉지 충전제용 수지 조성물은, 플립 칩 실장방법에 있어서, 도포, 적하 후에 적절한 두께를 유지할 수 있고, 가열 접합할 때에 적절한 유동성을 가져 반도체 칩과 배선회로기판의 간극을 극간 없이 충전할 수 있어, 접합시의 가열에 의한 분해나 발포가 없고, 적당한 속도로 융해, 고체화하며, 고체화시에 전기 절연성이 높고, 배선 기판상의 전극에의 부식 요인을 가지지 않고, 고체화시에 부재간의 응력완화를 위하여 탄성률이 작고, 상온(25℃)에서의 보관 안정성이 뛰어나다. 또한, 양호한 내마이그레이션성이 뛰어나고, 플립 칩 실장품으로서 유용하다.As described above, the resin composition for encapsulation filler according to the present invention, in the flip chip mounting method, can maintain an appropriate thickness after coating and dropping, and has a proper fluidity when heat-bonded to close the gap between the semiconductor chip and the wiring circuit board. It can be charged without gaps, and there is no decomposition and foaming due to heating at the time of bonding, it melts and solidifies at an appropriate speed, has high electrical insulation at the time of solidification, has no corrosion factor to the electrode on the wiring board, and at the time of solidification The elastic modulus is small for stress relaxation between members, and the storage stability at room temperature (25 ° C) is excellent. It is also excellent in good migration resistance and useful as a flip chip package.

Claims (8)

반도체 칩과 배선회로기판과의 간극의 접착 봉지 충전제에 사용되는 봉지 충전제용 수지 조성물로서, 상기 수지 조성물이 폴리올레핀계 열가소성 수지 및 점착성 부여제를 함유하고, 또한, 상기 수지 조성물 중의 염소이온 농도가 0을 넘어 10ppm 이하인 것을 특징으로 하는 봉지 충전제용 수지 조성물.A resin composition for sealing filler used in an adhesive sealing filler in a gap between a semiconductor chip and a wiring circuit board, wherein the resin composition contains a polyolefin-based thermoplastic resin and a tackifier, and has a chlorine ion concentration of 0 in the resin composition. The resin composition for sealing fillers exceeding 10 ppm or less. 제 1항에 있어서, 상기 폴리올레핀계 열가소성 수지의 함유량이, 상기 봉지 충전제용 수지 조성물의 전체 고형분에 대해서, 20~99중량%인 것을 특징으로 하는 봉지 충전제용 수지 조성물.The resin composition for sealing filler of Claim 1 whose content of the said polyolefin thermoplastic resin is 20 to 99 weight% with respect to the total solid of the resin composition for sealing fillers. 제 1항에 있어서, 상기 폴리올레핀계 열가소성 수지가, 폴리에틸렌, 폴리프로필렌, 및 폴리옥시메틸렌으로 이루어지는 군으로부터 선택되는 적어도 1종인 것을 특징으로 하는 봉지 충전제용 수지 조성물.The resin composition for sealing filler according to claim 1, wherein the polyolefin-based thermoplastic resin is at least one member selected from the group consisting of polyethylene, polypropylene, and polyoxymethylene. 제 1항에 있어서, 상기 점착성 부여제가, 로진계 수지, 테르펜계 수지, 테르펜-페놀수지, 지방족계 석유수지, 방향족계 석유수지, 및 디시클로펜타디엔계 석유수지로 이루어지는 군으로부터 선택되는 수지인 것을 특징으로 하는 봉지 충전제용 수지 조성물.The tackifier is a resin selected from the group consisting of rosin resin, terpene resin, terpene-phenol resin, aliphatic petroleum resin, aromatic petroleum resin and dicyclopentadiene petroleum resin. The resin composition for sealing fillers characterized by the above-mentioned. 제 1항에 있어서, 상기 봉지 충전제용 수지 조성물의 흡수율이, 2.5중량% 이하인 것을 특징으로 하는 봉지 충전제용 수지 조성물.The resin composition for sealing filler of Claim 1 whose water absorption of the said resin composition for sealing filler is 2.5 weight% or less. 제 1항에 있어서, 상기 봉지 충전제용 수지 조성물의 탄성률이, 1,000MPa 이하인 것을 특징으로 하는 봉지 충전제용 수지 조성물.The elasticity modulus of the said resin composition for sealing fillers is 1,000 Mpa or less, The resin composition for sealing fillers of Claim 1 characterized by the above-mentioned. 반도체 칩 및 배선회로기판의 적어도 한쪽의 대향면에, 제 1항 내지 제 6항 중 어느 한 항에 기재된 봉지 충전제용 수지 조성물을 미리 도포 또는 첩부한 후, 상기 반도체 칩의 범프와 상기 배선회로기판의 전극을 가열 압착하는 것에 의해 상기 반도체 칩 및 배선회로기판을 접합하고, 동시에 상기 반도체 칩 및 배선회로기판의 간극을 상기 봉지 충전제용 수지 조성물에 의해 봉지하는 것을 특징으로 하는 플립 칩 실장방법.After applying or pasting the resin composition for sealing filler of any one of Claims 1-6 on at least one opposing surface of a semiconductor chip and a wiring circuit board, the bump of the said semiconductor chip and the said wiring circuit board And bonding the semiconductor chip and the wiring circuit board by heating and compressing the electrodes, and sealing the gap between the semiconductor chip and the wiring circuit board with the resin composition for sealing filler. 반도체 칩과 배선회로기판과의 간극에, 제 1항 내지 제 6항 중 어느 한 항에 기재된 봉지 충전제용 수지 조성물이 충전되어 있는 것을 특징으로 하는 플립 칩 실장품.A flip chip mounted product comprising a resin composition for sealing filler according to any one of claims 1 to 6, filled in a gap between a semiconductor chip and a wiring circuit board.
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Cited By (3)

* Cited by examiner, † Cited by third party
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009049115A (en) * 2007-08-17 2009-03-05 Seiko Epson Corp Semiconductor device, and manufacturing method thereof
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US9024455B2 (en) 2010-05-26 2015-05-05 Hitachi Chemical Company, Ltd. Semiconductor encapsulation adhesive composition, semiconductor encapsulation film-like adhesive, method for producing semiconductor device and semiconductor device
US20090194871A1 (en) 2007-12-27 2009-08-06 Utac - United Test And Assembly Test Center, Ltd. Semiconductor package and method of attaching semiconductor dies to substrates
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JP5245925B2 (en) * 2009-03-06 2013-07-24 富士通株式会社 Electronic component and manufacturing method thereof
US8633588B2 (en) * 2011-12-21 2014-01-21 Mediatek Inc. Semiconductor package
KR101914417B1 (en) 2018-05-28 2018-11-01 우성호 Rectifier system for surface treating

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3309661B2 (en) * 1995-08-14 2002-07-29 信越化学工業株式会社 Epoxy resin composition and semiconductor device
JP4026787B2 (en) * 1998-03-16 2007-12-26 株式会社リコー Thin battery
JP2000297200A (en) * 1999-04-14 2000-10-24 Toray Ind Inc Resin composition for semiconductor sealing, and semiconductor device
JP2001192438A (en) 2000-01-06 2001-07-17 Sumitomo Chem Co Ltd Epoxy resin composition
JP2003128881A (en) * 2001-10-18 2003-05-08 Matsushita Electric Ind Co Ltd Semiconductor device and its manufacturing method
JP2003277580A (en) * 2002-03-25 2003-10-02 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2004067796A (en) * 2002-08-05 2004-03-04 Ube Ind Ltd Hot melt adhesive composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180112976A (en) * 2017-04-05 2018-10-15 주식회사 아모센스 Base substrate for multy layer printed circuit board
CN110521292A (en) * 2017-04-05 2019-11-29 阿莫善斯有限公司 Printed circuit board and manufacturing methods
KR20200000016A (en) * 2018-06-22 2020-01-02 주식회사 아모그린텍 Flexible printed circuit board for chip on film package and method of bonding device to the same

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