KR20080015368A - 노광장치 및 디바이스의 제조방법 - Google Patents
노광장치 및 디바이스의 제조방법 Download PDFInfo
- Publication number
- KR20080015368A KR20080015368A KR1020070081101A KR20070081101A KR20080015368A KR 20080015368 A KR20080015368 A KR 20080015368A KR 1020070081101 A KR1020070081101 A KR 1020070081101A KR 20070081101 A KR20070081101 A KR 20070081101A KR 20080015368 A KR20080015368 A KR 20080015368A
- Authority
- KR
- South Korea
- Prior art keywords
- light
- optical system
- optical element
- polarization
- polarizing
- Prior art date
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/72—Controlling or varying light intensity, spectral composition, or exposure time in photographic printing apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
- G03F7/2006—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light using coherent light; using polarised light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polarising Elements (AREA)
Abstract
Description
Claims (6)
- 광원으로부터의 광에 의해 마스크를 조명하도록 구성된 조명광학계; 및상기 조명광학계에 의해 조명된 상기 마스크의 패턴을 기판 위에 투영하도록 구성된 투영광학계를 구비한 노광장치로서,상기 조명광학계는, 출사면으로부터 복수의 광속을 방출하도록 구성된 옵티컬 인티그레이터와, 상기 옵티컬 인티그레이터의 입사면에 소정의 광강도 분포를 형성하도록 구성된 회절광학소자 및 입사광의 편광상태를 조정하도록 구성된 편광광학소자를 포함하고,상기 편광광학소자는, 상기 편광광학소자가 복굴절 소자로서 기능하는 패턴을 가지고, 상기 패턴은 제1 방향과 상기 제1 방향과 직교하는 제2 방향 사이에서 다른 밀도를 가지고, 또한 상기 광원으로부터의 광의 파장 이하의 주기를 가지는 미세주기구조를 가지고,상기 편광광학소자는, 상기 회절광학소자에 의해 상기 광강도 분포가 형성되는 상기 입사면에 또는 그 부근에 배치되어 있는 것을 특징으로 하는 노광장치.
- 제1 항에 있어서,복수의 상기 편광광학소자가 상기 광원으로부터 상기 마스크까지의 광로에 따라서 직렬로 배치되어 있는 것을 특징으로 하는 노광장치.
- 제2 항에 있어서,상기 복수의 편광광학소자는 반파장판으로서 기능하는 것을 특징으로 하는 노광장치.
- 제1 항에 있어서,상기 미세 주기구조가 피라미드구조를 포함하는 것을 특징으로 하는 노광장치.
- 광원으로부터의 광에 의해 마스크를 조명하도록 구성된 조명광학계;상기 조명광학계에 의해 조명된 상기 마스크의 패턴을 기판에 투영하도록 구성된 투영광학계; 및상기 투영광학계에 내장되고, 입사광의 편광상태를 조정하도록 구성된 편광광학소자를 구비하는 노광장치로서상기 편광광학소자는 상기 편광광학소자가 복굴절 소자로서 기능하는 패턴을 가지고, 상기 패턴이, 제1 방향과 상기 제1 방향에 직교하는 제2 방향 사이에서 다른 밀도를 가지고, 또한 상기 광원으로부터의 광의 파장 이하의 주기를 가지는 미세 주기구조를 가지는 것을 특징으로 하는 노광장치.
- 제1 항에 기재된 노광장치를 사용하여, 감광제가 도포된 기판을 노광하는 공 정 및노광된 상기 기판을 현상하는 공정을 포함하는 것을 특징으로 하는 디바이스의 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00221241 | 2006-08-14 | ||
JP2006221241A JP2008047673A (ja) | 2006-08-14 | 2006-08-14 | 露光装置及びデバイス製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080015368A true KR20080015368A (ko) | 2008-02-19 |
KR100882968B1 KR100882968B1 (ko) | 2009-02-12 |
Family
ID=39050396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070081101A KR100882968B1 (ko) | 2006-08-14 | 2007-08-13 | 노광장치 및 디바이스의 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080036992A1 (ko) |
JP (1) | JP2008047673A (ko) |
KR (1) | KR100882968B1 (ko) |
TW (1) | TW200817843A (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007055567A1 (de) * | 2007-11-20 | 2009-05-28 | Carl Zeiss Smt Ag | Optisches System |
JP5206029B2 (ja) * | 2008-03-04 | 2013-06-12 | ソニー株式会社 | 液晶表示装置 |
JP5167032B2 (ja) | 2008-08-27 | 2013-03-21 | キヤノン株式会社 | 計算機ホログラム、露光装置及びデバイスの製造方法 |
DE102012206150B9 (de) * | 2012-04-16 | 2014-06-12 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage |
CN103680078B (zh) * | 2013-12-11 | 2016-08-17 | 京东方科技集团股份有限公司 | 预警系统及光学设备 |
CN114236971B (zh) * | 2021-11-30 | 2023-11-21 | 歌尔股份有限公司 | 偏振全息光栅的曝光系统及曝光方法 |
Family Cites Families (18)
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US7758794B2 (en) * | 2001-10-29 | 2010-07-20 | Princeton University | Method of making an article comprising nanoscale patterns with reduced edge roughness |
US6767594B1 (en) * | 1997-12-16 | 2004-07-27 | Gosudarstvenny Nauchny Tsentr Rossiiskoi | Polarizer and liquid crystal display element |
JP3710321B2 (ja) * | 1999-04-01 | 2005-10-26 | キヤノン株式会社 | 露光量制御方法、露光装置およびデバイス製造方法 |
JP4521896B2 (ja) * | 1999-06-08 | 2010-08-11 | キヤノン株式会社 | 照明装置、投影露光装置及びデバイス製造方法 |
JP2001176789A (ja) * | 1999-12-21 | 2001-06-29 | Nikon Corp | 投影露光装置および該投影露光装置を用いたデバイスの製造方法 |
JP4289755B2 (ja) * | 2000-02-24 | 2009-07-01 | キヤノン株式会社 | 露光量制御方法、デバイス製造方法および露光装置 |
JP4545874B2 (ja) * | 2000-04-03 | 2010-09-15 | キヤノン株式会社 | 照明光学系、および該照明光学系を備えた露光装置と該露光装置によるデバイスの製造方法 |
US6753977B2 (en) * | 2001-01-31 | 2004-06-22 | Hewlett-Packard Development Company, L.P. | Machine-readable information embedded on a document |
US6590695B1 (en) * | 2002-02-26 | 2003-07-08 | Eastman Kodak Company | Micro-mechanical polarization-based modulator |
US6665119B1 (en) * | 2002-10-15 | 2003-12-16 | Eastman Kodak Company | Wire grid polarizer |
DE10324468B4 (de) * | 2003-05-30 | 2006-11-09 | Carl Zeiss Smt Ag | Mikrolithografische Projektionsbelichtungsanlage, Projektionsobjektiv hierfür sowie darin enthaltenes optisches Element |
JP4323903B2 (ja) * | 2003-09-12 | 2009-09-02 | キヤノン株式会社 | 照明光学系及びそれを用いた露光装置 |
US7408616B2 (en) * | 2003-09-26 | 2008-08-05 | Carl Zeiss Smt Ag | Microlithographic exposure method as well as a projection exposure system for carrying out the method |
KR101441840B1 (ko) * | 2003-09-29 | 2014-11-04 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
JP2005172844A (ja) * | 2003-12-05 | 2005-06-30 | Enplas Corp | ワイヤグリッド偏光子 |
JP4497968B2 (ja) * | 2004-03-18 | 2010-07-07 | キヤノン株式会社 | 照明装置、露光装置及びデバイス製造方法 |
JP2005286068A (ja) * | 2004-03-29 | 2005-10-13 | Canon Inc | 露光装置及び方法 |
JP2006005319A (ja) * | 2004-06-21 | 2006-01-05 | Canon Inc | 照明光学系及び方法、露光装置及びデバイス製造方法 |
-
2006
- 2006-08-14 JP JP2006221241A patent/JP2008047673A/ja not_active Withdrawn
-
2007
- 2007-08-10 US US11/837,113 patent/US20080036992A1/en not_active Abandoned
- 2007-08-13 TW TW096129845A patent/TW200817843A/zh unknown
- 2007-08-13 KR KR1020070081101A patent/KR100882968B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US20080036992A1 (en) | 2008-02-14 |
JP2008047673A (ja) | 2008-02-28 |
KR100882968B1 (ko) | 2009-02-12 |
TW200817843A (en) | 2008-04-16 |
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