KR20080013577A - Apparatus for fabricating semiconductor devices having gas injection line directly connected body thereto and auto gas injection line connecting unit used thereof - Google Patents

Abstract

An apparatus for fabricating semiconductor devices having a gas injection line directly connected a body thereto and an automatic gas injection line connecting unit used thereof are provided to easily mount and separate an ion implantation device and to increase durability and lifetime of equipment by reducing loss of time, parts, and human power. An ion implantation device(220) includes a first gas supplying pipe(225) and a second gas supplying pipe. The first gas supplying pipe is coupled to an external wall(210). The second gas supplying pipe is coupled to the external wall and connected to the first gas supplying pipe. The ion implantation device includes a slit for discharging an ion beam. The second gas supplying pipe is directly connected to the ion implantation device. Diameters of sections of the first gas supplying pipe and the second gas supplying pipe are different from each other. Gaskets for sealing and buffering are formed on the sections of the first gas supplying pipe and the second gas supplying pipe. Head panels(226) of the external wall and the ion implantation device are directly coupled.

Description

{Apparatus for fabricating semiconductor devices having gas injection line directly connected body and and auto gas injection line connecting unit used}

1 is a cross-sectional view schematically showing an ion implantation apparatus according to the prior art.

2 is an external perspective view schematically illustrating an ion implantation apparatus according to an embodiment of the present invention.

3 is a cross-sectional view schematically showing an ion implantation apparatus according to an embodiment of the present invention.

4A and 4B are diagrams illustrating an automatic connection part of gas injection tubes according to various embodiments of the present disclosure.

(Explanation of symbols for the main parts of the drawing)

200: ion implantation device 210: main body outer wall

220: ion implanter 221: slit portion

222: shielding unit 225: first gas injection tube

226: head panel 227: second gas injection pipe

228: third gas inlet pipe 300: automatic gas inlet pipe connection

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation apparatus for manufacturing a semiconductor device, and more particularly, to an ion implantation apparatus for manufacturing a semiconductor device having a gas injection tube mounted on a source head mounted on an outer wall of an ion implantation apparatus, and an automatic gas injection tube connection portion for use.

The ion implantation apparatus for manufacturing a semiconductor device is a device for implanting ions into a semiconductor substrate or polycrystalline silicon formed on the substrate during a semiconductor device manufacturing process. The ion implantation process forms a portion that requires conductivity, such as source / drain formation and imparting conductivity to a signal transmission line, and is used for well formation, Vt control, and bonding structure control of an insulating film.

1 is a cross-sectional view briefly showing an ion implantation apparatus for manufacturing a semiconductor device according to the prior art.

Referring to FIG. 1, the ion implantation apparatus 100 for manufacturing a semiconductor device according to the related art is mounted and fastened to a main body outer wall 110 and a main body outer wall 110, and includes a slit part 121, a shielding part 122, and a head. An ion implanter 120 having a panel 126 is included.

Gas injection tubes 123 and 125 for supplying gas to the ion implanter 120 are fixed to the head panel 126 of the ion implanter 120. Therefore, when each component of the ion implanter 120, for example, the salt slit 121, the shielding portion 122, and other components causes a failure or an abnormality occurs, the ion implanter 120 is moved to the ion implanter. The gas injection tubes 123 and 125 should be separated from the main body outer wall 110 of the ion implantation apparatus 100 even when there are no abnormalities in the gas injection tubes 123 and 125. do. Therefore, unnecessary work is required, and thus the consumption and time required of the accessories are large, which adversely affects the durability and stability of the ion implantation apparatus 100, and the productivity is reduced and the manufacturing cost of the semiconductor device is increased.

An object of the present invention is to provide an ion implantation apparatus that can be supplied to the ion implanter by the gas injection tube is fastened independently to the outer wall of the ion implantation device.

Another technical problem to be achieved by the present invention is to provide an automatic gas injection pipe connection to which the gas injection pipes are automatically connected.

Technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided an ion implantation apparatus for manufacturing a semiconductor device, including: an outer wall, a first gas injection tube fastened to the outer wall, and a second gas fastener connected to the outer wall and connected to the first gas injection tube. And an ion implanter comprising a gas injection tube.

The ion implanter may comprise a slit emitting an ion beam and the second gas injection tube may be directly connected.

End diameters of the first gas injection pipe and the second gas injection pipe may be manufactured to be different from each other or the same, and a gasket for sealing and buffering may be provided on the contact surface of each gas injection pipe.

The outer wall and the head panel of the ion implanter can be fastened directly and have an O-ring between them.

According to another aspect of the present invention, an ion implantation apparatus for manufacturing a semiconductor device includes a first gas injection pipe connected to an outer wall, a second gas pipe extending from an first gas pipe, and an outer wall to an inner wall. And an ion implanter including a third gas pipe inserted and connected to the second gas pipe.

The ion implanter may include slits for emitting an ion beam, and the second gas injection tube may be directly connected.

End diameters of the first gas injection pipe and the second gas injection pipe may be manufactured to be different from each other or the same, and a gasket for sealing and buffering may be provided on the contact surface of each gas injection pipe.

The outer wall and the head panel of the ion implanter can be fastened directly and have an O-ring between them.

According to another aspect of the present invention, there is provided an automatic gas inlet pipe connection part including an outlet gas injection pipe connection part having a first outer diameter, and an outlet gas injection pipe connection part having a second inner diameter. The second inner diameter may be larger than the first outer diameter.

The automatic gas inlet pipe connection may be made of SUS.

According to another aspect of the present invention, there is provided an automatic gas inlet pipe connecting part including an outlet gas inlet pipe having a first seal at an end, and an inlet gas injection pipe having a second seal at an end. And the closures are elastic and can be in close contact with each other.

The seals may be made of any one of SUS, rubber, or elastic material.

Specific details of other embodiments are included in the detailed description and the drawings.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the art to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

Embodiments described herein will be described with reference to plan and cross-sectional views, which are ideal schematic diagrams of the invention. Accordingly, the shape of the exemplary diagram may be modified by manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present invention are not limited to the specific forms shown, but also include variations in forms generated by the manufacturing process. Thus, the regions illustrated in the figures have schematic attributes, and the shape of the regions illustrated in the figures is intended to illustrate a particular form of region of the device, and is not intended to limit the scope of the invention.

Hereinafter, an ion implantation apparatus according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is an external perspective view schematically illustrating an ion implantation apparatus according to an embodiment of the present invention.

Referring to FIG. 2, the ion implantation apparatus according to an embodiment of the present invention includes a first gas injection tube directly connected to the main body outer wall 210, and an ion injector 220 inserted into the main body outer wall and positioned inside the main body. And a head panel 226 of the ion implanter 220 coupled to the outer wall 210 of the main body.

The main body outer wall 210 is a space where an ion implantation process is performed. In the figure, only a part of the ion implantation apparatus 200 is shown. In the portion not shown in the drawings, a space in which the wafer for semiconductor device manufacturing is introduced and derived, a control unit for operating the ion implantation apparatus 200 may be provided.

In addition, the drawing shows a state in which the ion implanter 220 is inserted into the body of the ion implanter 200 and fastened. Therefore, in the drawing, the first gas injection tube and the ion implanter 220 may be separated and detached from the main body of the ion implantation apparatus 200. The ion implanter 220 may be inserted into the main body, and then the head panel 226 of the ion implanter 220 may be fastened and fixed to the outer wall 210 of the main body. The method in which the head panel and the main body outer wall are fastened may be fastened with a screw, a screw, or a bolt and a nut, for example. Although not shown, a rail may be provided to move the ion implanter 220 inside the body. That is, the ion implanter 220 may be inserted along the rail in the main body and may be separated out of the main body.

The first gas injection tube 225 may supply a gas for ion implantation into the ion implantation apparatus 200. In more detail, the gas for ionization may be injected, and other carrier gas or auxiliary gas may be injected. Various gases may be injected according to the type of ions to be implanted, and various carrier gases and auxiliary gases may be used depending on the semiconductor device to be processed, and thus specific examples thereof will be omitted. The first gas pipe 225 may also be fastened by the main body outer wall 210 and other fastening means including screws, screws, bolts and nuts. The gas passing through the first gas pipe 225 is ultimately supplied to the ion implanter 220.

3 is a cross-sectional view schematically showing an ion implantation apparatus according to an embodiment of the present invention.

Referring to FIG. 3, the ion implantation apparatus 200 according to an embodiment of the present invention extends from the first gas injection tube 225 and the first gas injection tube 225 directly connected to the main body outer wall 210. A second gas injection tube 227 positioned inside the ion implantation apparatus 200, and an ion implanter 220 coupled to the outer wall 210 of the main body and positioned inside the ion implantation apparatus 200. 220 is a slit part 221 for emitting ions, a shielding part 222 for receiving gas and delivering it to the slit part 221, and a head panel 226 fastened to the main body outer wall 210 of the ion implantation device 200. And a third gas inlet 228 connected to the second gas inlet tube 227 to inject gas into the shielding unit 222.

Although not shown, an O-ring may be interposed between the head panel 226 and the main body outer wall 210 of the ion implantation apparatus 200. The O-ring may seal the inside of the main body of the ion implantation device 200 and may act as a buffer at the fastened portion. The O-ring may be made of SUS material.

The head panel 226 and the main body outer wall 210 of the ion implantation device may be fastened using screws, screws, bolts and nuts, and other fastening means. The head panel 210 may be understood as a part of the ion implanter 220, and the ion implanter 220 is ion implanted as the head panel 226 and the main body outer wall 210 of the ion implanter 200 are fastened and resolved. It can be inserted and mounted inside the device 200 and withdrawn and separated to the outside.

Although not illustrated in the drawings, a rail in which the ion implanter 220 may slide may be provided inside the ion implanter 200.

The first gas injection pipe 225 may be directly connected to the body outer wall 210 of the ion implantation device 200 independently.

The second gas injection pipe 227 may be connected to the main body outer wall 210 of the ion injection device 200, and the first gas injection pipe 225 may be a portion extending into the ion injection device 200. . That is, although the first gas injection tube 225 and the second gas injection tube 227 may be integrated, the first gas injection tube 225 and the second gas injection tube 227 may be mounted or fastened to the main body outer wall 210 of the ion injection apparatus 200 so that separate injection tubes are aligned with each other. It may be shaped. Therefore, desorption of the first gas injection pipe 225 does not mean desorption of the second gas injection pipe 227.

The third gas injection pipe 228 may be connected to the second gas injection pipe 227 to receive gas and deliver the gas to the shielding part 222 of the ion implanter 220.

The second gas injection pipe and the third gas injection pipe may be connected through the automatic connection part 300. Detailed description of the automatic connection unit 300 will be described later with reference to the drawings.

4A and 4B are diagrams illustrating an automatic connection part of gas injection tubes according to various embodiments of the present disclosure.

Referring to FIG. 4A, the automatic connection part 300 of the gas injection pipes according to an embodiment of the present invention may include an outlet gas injection pipe 227, an inlet gas injection pipe 228, and an inlet gas injection pipe 228. The gas inlet includes a gas inlet 300a having an inner diameter wider than the outer diameter of the outflow gas inlet tube 227. The gas injection hole 300a is preferably installed at the injection hole of the gas injection pipe 228 into which gas is introduced in consideration of the gas traveling direction. When gas is injected from the narrow gas injection pipe 227 to the gas injection pipe 228 having the wide gas injection port 300a by the inertia according to the flow direction of the gas, the gas flows in the reverse direction to escape the gas. Setting and maintaining an appropriate gas flow rate or pressure can prevent backflow of gas. In addition, when the inner diameter of the gas injection hole 300a and the outer diameter of the gas pipe inserted into the inner portion are closely adhered to each other, the gas backflow phenomenon may be further prevented. The gas injection hole 300a may be made of, for example, SUS.

Referring to FIG. 4B, the automatic connection part 300 of the gas injection pipes according to the embodiment of the present invention may include an outlet gas injection pipe 227, an inflow gas injection pipe 228, and an outflow gas injection pipe 227. The gas inlets of the inlet gas inlet pipe 228 include sealing gas inlets 300b and 300c, respectively.

Each of the sealing gas inlets 300b and 300c may have elasticity to seal the inlets of the outflow gas inlet tube 227 and the inlet gas inlet tube 227, thereby injecting the outflow gas from the outlet gas inlet tube 227. It may not leak gas flow to the tube 228. The outer shape of each of the gas inlets 300b and 300c is curved, so that the sealing effect can be more easily achieved. In the present embodiment, each gas inlet may be made of SUS, rubber, or other elastic material.

Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

As described above, according to the ion implantation apparatus and the gas pipe automatic connection part for manufacturing a semiconductor device according to the embodiments of the present invention, the ion implanter can be easily installed and detached, and the loss of time, accessories, and manpower is reduced, thereby extending the durability and life of the equipment. It is possible to improve the productivity, and to lower the manufacturing cost of the semiconductor device.

Claims (20)

outer wall, A first gas injection pipe coupled to the outer wall, and And an ion injector coupled to the outer wall and including a second gas injection tube connected to the first gas injection tube. In claim 1, The ion implanter comprises an slit for emitting an ion beam. In claim 1, The ion implanter is an ion implantation device that the second gas injection pipe is directly connected. In claim 1, An ion implantation apparatus having different end diameters of the first gas injection tube and the second gas injection tube. In claim 1, An ion implantation device having an end diameter equal to that of the first gas injection pipe and the second gas injection pipe. In claim 5, And a gasket for sealing and buffering at end portions of the first gas injection pipe and the second gas injection pipe. In claim 1, And an ion implantation device to which the outer wall and the head panel of the ion implanter are directly coupled. In claim 7, And an O-ring between the outer wall and the head panel of the ion implanter. A first gas inlet pipe connected to the outer wall, A second gas pipe extending from the first gas pipe into the outer wall; And an ion implanter including a third gas pipe inserted through the outer wall and connected to the second gas pipe. In claim 9, The ion implanter comprises an slit for emitting an ion beam. In claim 9, The ion implanter is an ion implantation device is directly connected to the second gas injection pipe. In claim 9, An ion implantation apparatus having different end diameters of the first gas injection tube and the second gas injection tube. In claim 9, An ion implantation device having an end diameter equal to that of the first gas injection pipe and the second gas injection pipe. The method of claim 14, And a gasket for sealing at ends of the first gas injection pipe and the second gas injection pipe. In claim 9, And an ion implantation device to which the outer wall and the head of the ion implanter are coupled. In claim 15, And an O-ring between the outer wall and the head of the ion implanter. Outlet gas inlet pipe connection with a first outer diameter, and An outflow gas inlet pipe connection having a second inner diameter, And the second inner diameter is greater than the first outer diameter. The method of claim 17, The automatic gas inlet pipe connecting portion is SUS automatic injection pipe connecting portion. An effluent gas inlet tube having a first closure at its end, and An inlet gas inlet tube having a second closure at the end, The seals are connected to the automatic gas injection pipe is elastic and close to each other. In claim 19, The seals are made of any one of SUS, rubber, or a material having elasticity.

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