CN113823545A - Device and method for improving process deviation of multi-chamber equipment - Google Patents
Device and method for improving process deviation of multi-chamber equipment Download PDFInfo
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- CN113823545A CN113823545A CN202010563956.8A CN202010563956A CN113823545A CN 113823545 A CN113823545 A CN 113823545A CN 202010563956 A CN202010563956 A CN 202010563956A CN 113823545 A CN113823545 A CN 113823545A
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- chamber
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- improving process
- hole structure
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- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004140 cleaning Methods 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 230000005465 channeling Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a device and a method for improving process deviation of multi-chamber equipment. The device and the method provided by the invention have the advantages of simple structure/operation and low price, and the problem of high-efficiency gas channeling obstruction can be achieved by reasonably setting the inner aperture, so that the difference of the film thickness of the wafer surface between chambers is finally reduced, and the yield of the wafer is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor manufacturing, and relates to a device and a method for improving process deviation of multi-chamber equipment.
Background
In the field of semiconductor manufacturing, a plurality of gases are widely used to react on the surface of a wafer to complete processes such as coating or etching, and the like, and at the present stage, in order to improve productivity and reduce cost, when the process and the chamber cleaning are carried out, a group of reaction gases are often shared by multiple chambers, so that a loop structure with interconnected and intercommunicated chambers is formed, namely, in the process state, considering that the flow resistance difference between the chambers exists, the reaction gases can also flow to other chambers through the loop of the cleaning chamber when flowing to the self chamber, so that the thickness difference of the surface film of the wafer between the chambers is caused, and the wafer yield is influenced.
To this problem, the current scheme of closing valve that adopts in current stage, some adopt independent air feed schemes between the cavity to prevent the gas cross flow to other cavities, to closing valve's technical scheme, closing valve can produce the particulate matter problem after long-time the use, to the scheme of independent air feed, must can increase air supply system's structure, can make the board too compact and complicated, increase the board cost simultaneously by a wide margin.
Disclosure of Invention
In order to solve the technical problem, an apparatus and a method for improving process deviation of a multi-chamber equipment are provided. The device simple structure, the low price, reasonable setting up the problem that inside aperture can reach the gaseous cross flow of efficient separation, finally reduce the thick difference of wafer surface film between the cavity, improve the wafer yields.
One of the objects of the present invention is to provide a device for improving process deviation of a multi-chamber apparatus, which is disposed on a reaction gas path of a multi-chamber, and has a tapered structure at one end and a straight hole structure at the other end.
Further, the device is positioned on the air path through the positioning step;
further, the end face of the straight hole structure is perpendicular to the flow direction of the process gas;
furthermore, the connecting positions of the conical surface structure and the straight hole structure are matched through a round-corner rounding structure;
further, the wall thickness of the straight hole structure is not less than 8 mm;
the invention also provides a method for improving the process deviation of multi-chamber equipment, and provides a device for improving the process deviation of the multi-chamber equipment, which is arranged in a pipeline between a plasma source outlet and a process gas inlet, wherein one end of the interior of the device adopts a conical surface structure, and the other end of the interior of the device adopts a straight hole structure; wherein the wall thickness of the straight hole structure is not less than 8 mm;
the device is positioned on the air path through the positioning step, and the thickness of the step meets the tolerance requirement of 0 to-0.02.
Guiding F ions for cleaning the chamber to the chamber through a conical surface structure;
the end surface of the straight hole structure is perpendicular to the flow direction of the process gas, so that the process gas is prevented from flowing to the other side chamber.
The invention has the beneficial effects that:
the device and the method provided by the invention have the advantages of simple structure/operation and low price, and the problem of high-efficiency gas channeling obstruction can be achieved by reasonably setting the inner aperture, so that the difference of the film thickness of the wafer surface between chambers is finally reduced, and the yield of the wafer is improved.
Drawings
In order to facilitate understanding for those skilled in the art, the present invention will be further described with reference to the accompanying drawings.
FIG. 1 is a position diagram of an apparatus for improving process variation in a multi-chamber apparatus of the present invention;
FIG. 2 is a cross-sectional view of an apparatus for reducing film thickness variation between chambers according to the present invention;
FIG. 3 is a before and after comparison of film thickness on wafer surfaces between adjacent chambers in accordance with an embodiment of the present invention;
FIG. 4 is the external temperature measurement data at different locations outside the pipeline according to an embodiment of the present invention.
Detailed Description
As shown in fig. 1, which is a schematic view of an installation position of the apparatus, the present embodiment provides an apparatus 1 for reducing a difference in film thickness between chambers, which mainly includes a positioning step, a conical surface structure 2, and a straight hole structure 3, for solving a problem of a difference in film thickness of a wafer surface between chambers caused by a cross flow of a process gas between the chambers in the prior art; the device reduces the difference of the surface film thickness of the wafer between the chambers and improves the yield of the wafer.
The positioning step positions the device on the air path;
further improved, the thickness of the step meets the tolerance requirement of 0 to-0.02. The reasonable tolerance requirements are to prevent the O-shaped sealing rings on other gas paths from being compressed and failed to cause gas leakage under the condition of thermal expansion due to overlarge thickness on one hand, and prevent the gaps generated by the overlarge thickness from retaining particles on the other hand;
as shown in fig. 2, one end of the interior of the device adopts a conical surface structure 2, and the other end adopts a straight hole structure 3;
guiding F ions for cleaning the chamber to the chamber through the conical surface structure 2;
f ions generated after nitrogen trifluoride in a cleaning chamber is ionized have energy, and under the condition that the aperture and the wall thickness of a straight hole in the device are not reasonably set, the high-energy F ions can melt the device, and the wall thickness of the straight hole structure in the device is not less than 8 mm.
Further improved, the connecting position of the conical surface and the straight hole is rounded to reduce the generation of eddy current at the connecting position.
The diameter of the straight hole is smaller than the diameter of the external pipelines at the two sides of the device, and the diameter of the straight hole is smaller, so that the larger side end surface of the device, namely the diameter of the straight hole, prevents the process gas from flowing to the adjacent chamber because the diameter of the straight hole is vertical to the flow direction of the process gas;
the device can be independently made into a part or the internal structure of the device can be applied to other part structures;
the internal structure of the device is not limited to the internal conical surface and straight hole structure, and can also be as follows: the full-conical surface, the stepped hole, the full-straight hole and other structures can achieve the purpose of the invention;
as shown in fig. 3, which is a data diagram illustrating comparative process data of the thickness of the surface film of the wafer between the front and the rear adjacent chambers of the apparatus according to the present embodiment, it can be seen from the data in the diagram that the difference of the surface film thickness of the wafer between the adjacent chambers is significantly reduced by using the apparatus.
As shown in fig. 4, F ions generated after the nitrogen trifluoride in the cleaning chamber is ionized have energy, and in the case that the diameter of the straight hole and the wall thickness in the device are not set reasonably, the F ions with high energy can melt the device, and external temperature measurement is carried out at different positions (#1#2#3#4#5#6) of a pipeline carrying the device, and data shows that the diameter of the straight hole and the wall thickness are set reasonably in the structure of the embodiment.
In conclusion, the device provided by the embodiment is simple in structure, the problem that the efficient blocking of gas channeling can be achieved by reasonably setting the inner hole diameter is solved, the difference of the film thickness of the surface of the wafer between the adjacent chambers is finally reduced, and the yield of the wafer is improved.
The preferred embodiments of the invention disclosed above are intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (8)
1. The device is characterized in that the device is arranged in a pipeline between a plasma source outlet and a process gas inlet, one end of the device is in a conical surface structure, and the other end of the device is in a straight hole structure.
2. An apparatus for improving process variation in a multi-chamber tool as claimed in claim 1, wherein the apparatus is positioned on the gas path by a positioning step.
3. An apparatus for improving process variation in a multi-chamber tool according to claim 2, wherein the thickness of the positioning step meets the tolerance requirement of 0, -0.02.
4. An apparatus for improving process variation in a multi-chamber tool as claimed in claim 1, wherein the diameter of the straight bore is smaller than the diameter of the external piping on both sides of the apparatus.
5. An apparatus for improving process variation in a multi-chamber tool according to claim 1, wherein the wall thickness of the straight hole structure is not less than 8 mm.
6. An apparatus for improving process variation in a multi-chamber tool as set forth in claim 1, wherein the side end surface of the inlet side of the straight hole structure is perpendicular to the process gas flow direction.
7. An apparatus for improving process variation in a multi-chamber tool as defined in claim 1 wherein the locations of the tapered surface structures and the straight hole structures are matched by rounded blunt structures.
8. A method for improving process deviation of a multi-chamber equipment, which is characterized in that a device for improving the process deviation of the multi-chamber equipment is provided; the device is arranged on a pipeline between a plasma source outlet and a process gas inlet, and one end of the device is of a conical surface structure while the other end is of a straight hole structure; wherein the wall thickness of the straight hole structure is not less than 8 mm;
guiding F ions for cleaning the chamber to the chamber through a conical surface structure;
the end face of the straight hole structure is perpendicular to the flow direction of the process gas, so that the process gas is prevented from flowing to the other side chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010563956.8A CN113823545A (en) | 2020-06-19 | 2020-06-19 | Device and method for improving process deviation of multi-chamber equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010563956.8A CN113823545A (en) | 2020-06-19 | 2020-06-19 | Device and method for improving process deviation of multi-chamber equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113823545A true CN113823545A (en) | 2021-12-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010563956.8A Pending CN113823545A (en) | 2020-06-19 | 2020-06-19 | Device and method for improving process deviation of multi-chamber equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113823545A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3923537A1 (en) * | 1988-08-12 | 1990-02-22 | Elektromat Veb | METHOD FOR CLEANING REACTORS FOR GAS PHASE MACHINING WORKPIECES |
| JP2006253733A (en) * | 2006-06-26 | 2006-09-21 | Tokyo Electron Ltd | Plasma processing apparatus and method of cleaning the same |
| JP2008053504A (en) * | 2006-08-25 | 2008-03-06 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing apparatus |
| CN101174107A (en) * | 2006-10-30 | 2008-05-07 | 应用材料股份有限公司 | Method and apparatus for photomask plasma etching |
| CN101321427A (en) * | 2008-07-22 | 2008-12-10 | 核工业西南物理研究院 | DC magnetic filtering cathode vacuum arc plasma source |
| CN103924216A (en) * | 2014-04-10 | 2014-07-16 | 沈阳拓荆科技有限公司 | Plasma generator gas mixing pipeline |
| CN104103483A (en) * | 2013-04-10 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air inlet apparatus and plasma processing device |
| CN108847389A (en) * | 2018-06-13 | 2018-11-20 | 上海华力微电子有限公司 | A kind of method of first effect in improvement plasma etch process |
-
2020
- 2020-06-19 CN CN202010563956.8A patent/CN113823545A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3923537A1 (en) * | 1988-08-12 | 1990-02-22 | Elektromat Veb | METHOD FOR CLEANING REACTORS FOR GAS PHASE MACHINING WORKPIECES |
| JP2006253733A (en) * | 2006-06-26 | 2006-09-21 | Tokyo Electron Ltd | Plasma processing apparatus and method of cleaning the same |
| JP2008053504A (en) * | 2006-08-25 | 2008-03-06 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing apparatus |
| CN101174107A (en) * | 2006-10-30 | 2008-05-07 | 应用材料股份有限公司 | Method and apparatus for photomask plasma etching |
| CN101321427A (en) * | 2008-07-22 | 2008-12-10 | 核工业西南物理研究院 | DC magnetic filtering cathode vacuum arc plasma source |
| CN104103483A (en) * | 2013-04-10 | 2014-10-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air inlet apparatus and plasma processing device |
| CN103924216A (en) * | 2014-04-10 | 2014-07-16 | 沈阳拓荆科技有限公司 | Plasma generator gas mixing pipeline |
| CN108847389A (en) * | 2018-06-13 | 2018-11-20 | 上海华力微电子有限公司 | A kind of method of first effect in improvement plasma etch process |
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