KR20070120237A - The igbt stack device of the equipartition parallel construct for the bulk electric power inverter - Google Patents

Abstract

An IGBT stack device for a large capacity power inverter is provided to make the large capacity power inverter stably by supplying the same current to plural IGBTs which are parallel-connected to each other. An IGBT(Insulated Gate Bipolar Transistor) stack device for a large capacity power inverter includes 12 stacks(100), a reactor, a parallel coupling bus bar, first and second vertical connecting bus bars, a DC input bus bar, and an AC output bus bar. Four stacks are parallel-connected with each other in three phases respectively. The stack includes a base substrate(110), a heat radiator(120), an inverter, and a cooling unit(140). The heat radiator is arranged on the base substrate and radiates heat to the outside during an operation of the stack. The inverter smoothes an input AC voltage to generate a DC voltage and converts the DC voltage to an AC voltage to output a power consumption. The cooling unit cools down a switching element.

Description

IGBT stack device of the equipartition parallel construct for the bulk electric power inverter}

1 is an exploded perspective view of an IGBT stack device according to an embodiment of the present invention.

Figure 2 is a graph showing the temperature coefficient according to the internal structure of the IGBT device according to an embodiment of the present invention.

3 is a basic circuit diagram of a stack according to an embodiment of the present invention.

4 is an equivalent circuit diagram of a dual IGBT module according to an embodiment of the present invention.

5 is an overall circuit diagram of an IGBT stack device according to an embodiment of the present invention.

6 is a view showing a parallel connection and a vertical connection between the stack according to an embodiment of the present invention.

7 is a view showing a parallel connection and a vertical connection of the stack according to another embodiment of the present invention.

8 is a left side and front view of an IGBT stack device according to an embodiment of the present invention.

9 is a right side view and a front view of an IGBT stack device according to an embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

100: stack 200: reactor

300: parallel connection bus bar 400a, 400b: first and second vertical connection bus bar

500: DC input bus bar 600: AC output bus bar

110: base substrate 120: heat dissipation unit

130: inverter unit 140: cooling unit

131: fixing plate 132: DC link capacitor

133: (-) terminal bus plate 134: (+) terminal bus plate

135: insulation plate 136: intermediate connection bus plate

137: intermediate connection bus plate insulation plate 138: discharge resistance

139: dual IGBT module

The present invention relates to a uniformly distributed parallel IGBT stack apparatus used in a large capacity power converter.

In recent years, the demand for precise control of various industrial devices is increasing rapidly. In order to satisfy these requirements, power converters such as rectifiers and inverters are required, and the use of power semiconductor elements is essential for these power converters. In the early days, thyristors such as SCR were used as a problem of power capacity of semiconductor devices. However, as power transistors are realized in large capacity, power transistors are now used as switching devices in medium and large capacity power converters.

Representatively, an Insulated Gate Bipolar Transistor (IGBT) is the most used among the power transistors. When using a single IGBT device in an inverter, the capacity of 30kVA is not a problem, but it is not suitable for power converters requiring more capacity.

The above problem can be solved by using several low-capacity devices in parallel instead of using a large-capacity IGBT device, but this is a problem in that the temperature of the device increases because current cannot be distributed evenly to each device. In order to solve this problem, there is a problem in that the peak voltage is increased due to the uneven distribution of current even when using the general parallel structure method.

The present invention was devised to solve the above problems, and provides an IGBT stack device capable of stably manufacturing a large-capacity power converter by supplying the same current by connecting a plurality of IGBT elements in parallel in parallel. It has a characteristic purpose.

The present invention relates to a uniformly distributed parallel IGBT stack device for a large-capacity power converter, comprising: 12 stacks connected in parallel to each of three phases (U, V, W); Reactor for equal distribution of current; A parallel connection bus bar connecting the respective stacks in parallel; First and second vertically connected bus bars that vertically connect the respective stacks; A DC input bus bar for inputting DC power to each stack; And an AC output bus bar for outputting AC power from each stack. It includes.

Preferably the stack is a base substrate; A heat dissipation part disposed on an upper surface of the base substrate to dissipate heat generated during stack operation; An inverter unit for generating a DC power by smoothing the input AC power and converting the AC power into an AC power to output power consumption; And a cooling unit for cooling the heat of the switching element by ventilating the outside air; Characterized in that it comprises a.

In addition, preferably, the inverter unit, which is located upright on the upper surface of the heat dissipation unit, a fixing plate for fixing the DC link capacitor, and one side is fixed to the upper surface of the fixing plate and the twelve for smoothing the input AC power to generate a DC power DC link capacitor, (-) terminal bus plate which is connected to the other side of DC link capacitor and connects (-) terminal, and (+) terminal which is located on top of (-) terminal bus plate and connects (+) terminal Located between the bus plate, the (-) terminal bus plate and the (+) terminal bus plate, the insulation plate for voltage insulation between the (+) terminal and the (-) terminal, and the 3 Intermediate bus plate that electrically connects the middle of the capacitors, and the intermediate bus bur between the positive bus terminal and the intermediate bus plate A plate insulating plate, 12 discharge resistors connected to respective DC link capacitors for distributing an equal voltage to the DC link capacitors, and four dual IGBT modules positioned on an upper surface of the heat sink and electrically connected in parallel. do.

In addition, the dual IGBT module is composed of a plurality of IGBT elements (Q1, Q2) and diodes (D1, D2) connected in series and parallel, and converts the DC power input from the DC link capacitor to an AC power output Characterized in that.

Also preferably, the dual IGBT module further includes a snubber capacitor, and is electrically connected to prevent overvoltage occurring between two terminals of the respective elements when the power semiconductor elements Q1 and Q2 are switched. It is done.

Preferably, the dual IGBT module includes a plurality of IGBT elements Q1 and Q2 and diodes D1 and D2 in parallel and connected to the collector of the upper element Q1 and the cathode of the diode D1. The negative terminal C2 is connected to the emitter of the lower element Q2 and the anode of the diode D2, and the AC input / output terminal is connected to the emitter of the upper element Q1 and the anode of the diode D1. It is characterized in that it is connected to the collector of the lower element (Q2) and the cathode of the diode (D2).

The features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings. Prior to this, the terms or words used in the present specification and claims are defined in the technical spirit of the present invention on the basis of the principle that the inventor can appropriately define the concept of the term in order to explain his invention in the best way. It should be interpreted to mean meanings and concepts. In addition, when it is determined that the detailed description of the known function and its configuration related to the present invention may unnecessarily obscure the subject matter of the present invention, it should be noted that the detailed description is omitted.

Hereinafter, with reference to the accompanying drawings will be described in more detail the IGBT stack apparatus according to the present invention.

In the IGBT stack device according to an embodiment of the present invention, 12 stacks are connected in parallel to each of four in three phases (U, V, and W), and the configuration and connection relationship of the overall IGBT stack device are detailed in each stack. After looking at the description.

As shown in FIG. 1, the stack 100 according to an aspect of the present invention includes a base substrate 110, a heat dissipation unit 120, an inverter unit 130, and a cooling unit 140. .

Specifically, the base substrate 110 supports the stack, and the heat dissipation unit 120 is located on the upper surface of the base substrate to release heat generated during the stack operation.

The inverter unit 130 is fixed to the upper surface of the heat dissipating unit fixed plate 131 for fixing the DC link capacitor, and one side is fixed to the upper surface of the fixing plate and smoothing the input AC power to generate a DC power 12 DC link capacitors 132, (-) terminal bus plate 133, which is coupled to the other side of the DC link capacitor and connects (-) terminals, and is located on the (-) terminal bus plate. Between the (+) terminal bus plate 134 and the (-) terminal bus plate and the (+) terminal bus plate for connecting the insulating plate 135 for voltage insulation between the (+) terminal and the (-) terminal. A plurality of intermediate connection bus plates 136 located above the positive terminal bus plate and electrically connecting the capacitor located in the middle of the three series capacitors, and between the positive terminal bus plate and the intermediate connection bus plate.Interconnection bus plate insulation plate 137, 12 discharge resistors 138 electrically connected to each DC link capacitor to distribute the equal voltage, and 4 dual IGBT modules located on the top surface of the heat sink and electrically connected in parallel. (139). That is, as shown in Figure 1, from the fixed plate to the direct link capacitor, (-) terminal bus plate, insulation plate, (+) terminal bus plate, intermediate connection bus plate insulation plate, intermediate connection bus plate, discharge resistance Or it is preferable to understand that the stacked mechanically connected.

The IGBT device includes a PT (Punch Through) type, a Non Punch Through (NPT) type, a Soft Punch Through (SPT) type, a Trench type, etc. according to its structure and characteristics, as shown in FIG. It is recommended to use a Trench-type IGBT device with good parallelism and low saturation voltage and low Conduction Power Loss.

For reference, the current burden is caused by a device having a low saturation characteristic, and the switching causes more switching loss and the junction temperature rises sharply. If a device with a positive temperature coefficient of saturation voltage is used, as the temperature increases, the saturation voltage increases and the current of the transistor which flowed a lot first moves to the transistor where the current flows less. It flows evenly across the two transistors connected in parallel. Therefore, power semiconductors with positive temperature coefficients are used for parallel connection.

The cooling unit 140 cools the heat of the switching element by ventilating outside air.

So far, the mechanical configuration and the connection relationship of the stack 100 have been described. Hereinafter, the circuit configuration of the stack 100 will be described with reference to FIGS. 3 and 4.

As shown in FIG. 3, the stack 100 according to a characteristic aspect of the present invention is composed of a DC smoothing unit, a dual IGBT module, and a current distribution unit.

Specifically, the DC smoothing unit is composed of a DC link capacitor and a discharge resistor, and smoothes the input AC power to generate a DC power, and then distributes an equal DC voltage to each DC link capacitor.

The dual IGBT module consists of a plurality of IGBT elements (Q1, Q2) and diodes (D1, D2) connected in parallel and in parallel, and the two terminals of each element when the power semiconductor elements (Q1, Q2) of each of the dual IGBT modules switch. It is electrically connected to a snubber capacitor (SNC) to prevent overvoltage occurring between the output of the alternating current. When the upper element Q1 of the dual IGBT module is in an on state, the lower element Q2 is in an off state, and when the lower element Q2 is in an on state, the upper element Q1 is turned off.

At this time, the positive terminal C1 of the IGBT is connected to the collector of the upper element Q1 and the cathode of the diode D1 as shown in FIG. 4, and the negative terminal C2 is the lower element Q2. Is connected to the emitter of the diode (D2) and the anode of the diode (D2), and the AC input and output terminals are connected to the emitter of the upper element (Q1) and the anode of the diode (D1) and at the same time the collector and diode (D2) of the lower element (Q2) Is connected to the cathode.

The current distributor A3 is configured as a reactor for equally distributing the current.

Next, an IGBT stack device in which the stack 100 having the above-described configuration is connected in parallel will be described with reference to FIGS. 5 to 9.

Prior to this, each stack has the same structure and the same connection relationship, so that each stack is collectively described with the same reference numeral 100 without distinction.

As shown in FIGS. 5 to 9, the IGBT stack device according to an aspect of the present invention is a device in which 12 stacks 100 are connected in parallel to each of four in three phases (U, V, and W). In total, 12 stacks 100, a reactor 200 for equal distribution of currents, a parallel connection bus bar 300 for connecting the stacks in parallel, a first and second vertical connection bus bars 400a for connecting the stacks up and down 400a, 400b), a DC input bus bar 500, and an AC output bus bar 600.

Specifically, the twelve stacks 100 are connected in parallel and in parallel through the parallel connection bus bars 300 and the first and second vertical connection bus bars 400a and 400b. At this time, all the gaps between the stacks are kept the same.

Stack 100 is composed of four in each phase (U, V, W) in parallel, smoothing the input AC power to generate a DC power, by converting the generated DC power to AC power, three-phase AC power Outputs

By using the IGBT stack device according to an embodiment of the present invention having the above-described configuration and function, it has a feature that can be used by replacing the DC motor that controls the power with a large capacity thyristor with an AC induction motor.

As described above and described with reference to a preferred embodiment for illustrating the technical idea of the present invention, the present invention is not limited to the configuration and operation as shown and described as described above, it is a deviation from the scope of the technical idea It will be understood by those skilled in the art that many modifications and variations can be made to the invention without departing from the scope of the invention. Accordingly, all such suitable changes and modifications and equivalents should be considered to be within the scope of the present invention.

According to the present invention as described above, by supplying the same current by connecting a plurality of IGBT elements in parallel evenly, there is an effect that it is possible to stably manufacture a large-capacity power converter.

In addition, according to the present invention, there is also an effect that can be used by replacing the DC motor for controlling the power with a large capacity thyristor with an AC induction motor.

Claims (6)

IGBT stack device with evenly distributed parallel structure for large capacity power converter, 12 stacks 100 connected in parallel to each of three phases U, V, and W; Reactor 200 for equal distribution of current; A parallel connection bus bar 300 for connecting the respective stacks in parallel; First and second vertically connected bus bars 400a and 400b that vertically connect the respective stacks; A DC input bus bar 500 for inputting DC power to each stack; And An AC output bus bar (600) for outputting AC power from each stack; IGBT stack device of equally distributed parallel structure for large capacity power converter including a. The method of claim 1, The stack 100, A base substrate 110; A heat dissipation unit 120 disposed on an upper surface of the base substrate to dissipate heat generated during stack operation; An inverter unit 130 for smoothing the input AC power to generate a DC power, and outputting power consumption by converting the AC power to AC power; And Cooling unit 140 for cooling the heat of the switching element by ventilating the outside air; IGBT stack device of equally distributed parallel structure for large capacity power converter comprising a. The method of claim 2, The inverter unit 130, Positioned upright on the top of the heat dissipation unit, the fixing plate 131 for fixing the DC link capacitor, and one side is fixed to the upper surface of the fixing plate and 12 DC link capacitors to generate a DC power by smoothing the input AC power ( 132), (-) terminal bus plate 133 that is coupled to the other side of the DC link capacitor and connects the (-) terminal, and (+) terminal which is located on the upper surface of the (-) terminal bus plate. Terminal bus plate 134, between (-) terminal bus plate and (+) terminal bus plate, and the insulating plate 135 for voltage insulation between (+) terminal and (-) terminal, and (+) terminal Intermediate bus plate 136, which is located on top of the bus plate and electrically connects the capacitor in the middle of the three series capacitors, and the intermediate bus plate located between the positive terminal bus plate and the intermediate bus plate. A soft plate 137, twelve discharge resistors 138 connected to respective DC link capacitors to distribute an equal voltage to the DC link capacitors, and four dual IGBT modules positioned on the top surface of the heat sink and electrically connected in parallel. An equally distributed parallel structure IGBT stack device for a large capacity power converter, comprising: 139). The method of claim 3, wherein The dual IGBT module 139, It is composed of a plurality of IGBT elements (Q1, Q2) and diodes (D1, D2) connected in parallel and in parallel, the equality for large-capacity power converter, characterized in that for outputting by converting the DC power input from the DC link capacitor to AC power. IGBT stack device with distributed parallel structure. The method of claim 4, wherein The dual IGBT module 139, Further comprising a snubber capacitor, evenly distributed parallel for a large-capacity power converter, characterized in that the power semiconductor device (Q1, Q2) is electrically connected to prevent overvoltage occurring between the two terminals of each device when switching IGBT stack device of structure. The method of claim 3, wherein The dual IGBT module 139, A plurality of IGBT elements (Q1, Q2) and diodes (D1, D2) are configured in parallel, connected to the collector of the upper element (Q1) and the cathode of the diode (D1), the negative terminal (C2) is It is connected to the emitter of the element Q2 and the anode of the diode D2, and the AC input / output terminal is connected to the emitter of the upper element Q1 and the anode of the diode D1 and at the same time with the collector of the lower element Q2. IGBT stack device of equally distributed parallel structure for large capacity power converter, characterized in that connected to the cathode of the diode (D2).

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