KR20070085829A - 반사형 포토마스크 블랭크, 반사형 포토마스크, 및 이것을이용한 반도체 장치의 제조 방법 - Google Patents
반사형 포토마스크 블랭크, 반사형 포토마스크, 및 이것을이용한 반도체 장치의 제조 방법 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Abstract
Description
Claims (12)
- 기판과,상기 기판 상에 형성된 다층 반사막과,상기 다층 반사막 상에 형성되고, 탄탈 및 규소를 함유하는 제1 광 흡수층, 및 그 제1 광 흡수층 상에 적층된, 질소 및 산소 중 적어도 1개, 탄탈, 및 규소를 함유하는 제2 광 흡수층을 포함하는 광 흡수성 적층을 구비하는 것을 특징으로 하는 반사형 포토마스크 블랭크.
- 제1항에 있어서,상기 제2 광 흡수층은, 190 내지 260㎚의 파장에서의 소쇠 계수가 1보다 작고, 상기 그 시트 저항이 50MΩ/□보다 작은 것을 특징으로 하는 반사형 포토마스크 블랭크.
- 제1항 또는 제2항에 있어서,상기 제2 광 흡수층은, 탄탈, 규소, 및 질소를 함유하고, 2 내지 7at%의 탄탈, 40 내지 60at%의 규소, 및 6 내지 15at%의 질소를 함유하는 것을 특징으로 하는 반사형 포토마스크 블랭크.
- 제1항 또는 제2항에 있어서,상기 제2 광 흡수층은, 탄탈, 규소, 및 산소를 함유하고, 탄탈의 함유량은, 30∼40at%이며, 탄탈과 산소의 원자비는 1:1∼1:2인 것을 특징으로 하는 반사형 포토마스크 블랭크.
- 제1항 또는 제2항에 있어서,상기 제2 광 흡수층은, 탄탈, 규소, 산소, 및 질소를 함유하고, 탄탈의 함유량은 20∼40at%이며, 탄탈과 산소의 원자비는 3:2∼9:1, 및 탄탈과 질소의 원자비는 1:2∼3:2인 것을 특징으로 하는 반사형 포토마스크 블랭크.
- 제1항 또는 제2항에 있어서,상기 제2 광 흡수층은, 탄탈, 규소, 및 산소를 함유하고, 탄탈의 함유량은 40∼90at%이며, 탄탈과 산소의 원자비는 3:5∼5:1의 범위인 것을 특징으로 하는 반사형 포토마스크 블랭크.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 제2 광 흡수층은, 그 표면이 0.6㎚Rms 이하의 표면 거칠기를 갖는 것을 특징으로 하는 반사형 포토마스크 블랭크.
- 제1항 내지 제7항 중 어느 한 항에 있어서,상기 제1 광 흡수층은, 6 내지 15at%의 규소를 함유하는 것을 특징으로 하 는 반사형 포토마스크 블랭크.
- 제1항 내지 제8항 중 어느 한 항에 있어서,상기 제1 광 흡수층 및 상기 제2 광 흡수층은, 비정질인 것을 특징으로 하는 반사형 포토마스크 블랭크.
- 제1항 내지 제9항 중 어느 한 항에 있어서,상기 광 흡수성 적층은, 원자외선 영역에서의 반사율이 13% 이하인 것을 특징으로 하는 반사형 포토마스크 블랭크.
- 청구항1 내지 청구항10 중 어느 한 항의 반사형 포토마스크 블랭크의 광 흡수성 적층이 패턴 가공된 것을 특징으로 하는 반사형 포토마스크.
- 청구항11의 반사형 포토마스크에, 극단 자외광을 조사하고, 그 반사광에 의해, 반도체 기판 상에 형성된 극단 자외광용 레지스트층을 노광하여, 패턴을 전사하는 공정을 포함하는 반도체 장치의 제조 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2004358736 | 2004-12-10 | ||
JPJP-P-2004-00358736 | 2004-12-10 | ||
JP2005273487 | 2005-09-21 | ||
JPJP-P-2005-00273487 | 2005-09-21 |
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KR20070085829A true KR20070085829A (ko) | 2007-08-27 |
KR100906026B1 KR100906026B1 (ko) | 2009-07-02 |
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KR1020077012792A KR100906026B1 (ko) | 2004-12-10 | 2005-12-06 | 반사형 포토마스크 블랭크, 반사형 포토마스크, 및 이것을이용한 반도체 장치의 제조 방법 |
Country Status (8)
Country | Link |
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US (1) | US7838177B2 (ko) |
EP (1) | EP1833080B1 (ko) |
JP (1) | JP5003159B2 (ko) |
KR (1) | KR100906026B1 (ko) |
AT (1) | ATE482466T1 (ko) |
DE (1) | DE602005023779D1 (ko) |
TW (1) | TWI443447B (ko) |
WO (1) | WO2006062099A1 (ko) |
Cited By (1)
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KR20190017667A (ko) * | 2017-08-10 | 2019-02-20 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크 및 반사형 마스크 |
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JP5256569B2 (ja) * | 2005-02-15 | 2013-08-07 | 凸版印刷株式会社 | 極端紫外線露光用マスク、マスクブランク、露光方法及びマスクブランクの製造方法 |
US7771895B2 (en) * | 2006-09-15 | 2010-08-10 | Applied Materials, Inc. | Method of etching extreme ultraviolet light (EUV) photomasks |
JP2008078551A (ja) * | 2006-09-25 | 2008-04-03 | Toppan Printing Co Ltd | 反射型フォトマスクブランク及び反射型フォトマスク並びに半導体装置の製造方法 |
JP5018212B2 (ja) * | 2007-04-26 | 2012-09-05 | 凸版印刷株式会社 | 反射型フォトマスクブランク及び反射型フォトマスク並びに半導体装置の製造方法 |
JP5711533B2 (ja) * | 2008-05-09 | 2015-05-07 | Hoya株式会社 | 反射型マスク、反射型マスクブランク及びその製造方法 |
US8962220B2 (en) * | 2009-04-02 | 2015-02-24 | Toppan Printing Co., Ltd. | Reflective photomask and reflective photomask blank |
US20110159411A1 (en) * | 2009-12-30 | 2011-06-30 | Bennett Olson | Phase-shift photomask and patterning method |
JP5921953B2 (ja) * | 2012-03-28 | 2016-05-24 | 芝浦メカトロニクス株式会社 | 反射型マスクの製造方法、および反射型マスクの製造装置 |
US20140170533A1 (en) * | 2012-12-19 | 2014-06-19 | Sematech, Inc. | Extreme ultraviolet lithography (euvl) alternating phase shift mask |
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JP2002246299A (ja) * | 2001-02-20 | 2002-08-30 | Oki Electric Ind Co Ltd | 反射型露光マスク、反射型露光マスクの製造方法、及び半導体素子 |
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KR20190017667A (ko) * | 2017-08-10 | 2019-02-20 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크 및 반사형 마스크 |
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WO2006062099A1 (ja) | 2006-06-15 |
ATE482466T1 (de) | 2010-10-15 |
EP1833080A1 (en) | 2007-09-12 |
KR100906026B1 (ko) | 2009-07-02 |
EP1833080B1 (en) | 2010-09-22 |
TW200632543A (en) | 2006-09-16 |
DE602005023779D1 (de) | 2010-11-04 |
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JP5003159B2 (ja) | 2012-08-15 |
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US20070238033A1 (en) | 2007-10-11 |
US7838177B2 (en) | 2010-11-23 |
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