KR20070068624A - 저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 - Google Patents
저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 Download PDFInfo
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- KR20070068624A KR20070068624A KR1020050130457A KR20050130457A KR20070068624A KR 20070068624 A KR20070068624 A KR 20070068624A KR 1020050130457 A KR1020050130457 A KR 1020050130457A KR 20050130457 A KR20050130457 A KR 20050130457A KR 20070068624 A KR20070068624 A KR 20070068624A
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- South Korea
- Prior art keywords
- image sensor
- photo
- diode
- cmos image
- pixel
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- 239000004065 semiconductor Substances 0.000 abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 3
- 150000004706 metal oxides Chemical class 0.000 abstract description 3
- 230000000295 complement effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (3)
- CMOS 이미지 센서의 픽셀 어레이를 구성하는 픽셀부에 있어서,빛에 노출시켜 전하를 집적하기 위한 제1포토 다이오드; 및상기 제1포토 다이오드가 집적한 전하를 임시로 저장하기 위한 제2포토 다이오드를 포함하는 CMOS 이미지 센서의 픽셀부.
- 제1항에 있어서, 상기 제2포토 다이오드가 상기 픽셀 어레이의 각 컬럼별 노출이 같은 시간에 이루어지도록 상기 제1포토 다이오드가 집적한 전하를 저장하는 CMOS 이미지 센서의 픽셀부.
- 제1항 또는 제2항에 있어서, 상기 제2포토 다이오드는, 차폐된 것을 특징으로 하는 CMOS 이미지 센서의 픽셀부.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050130457A KR100752405B1 (ko) | 2005-12-27 | 2005-12-27 | 저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050130457A KR100752405B1 (ko) | 2005-12-27 | 2005-12-27 | 저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070068624A true KR20070068624A (ko) | 2007-07-02 |
KR100752405B1 KR100752405B1 (ko) | 2007-08-28 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020050130457A KR100752405B1 (ko) | 2005-12-27 | 2005-12-27 | 저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 |
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KR (1) | KR100752405B1 (ko) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20010061311A (ko) * | 1999-12-28 | 2001-07-07 | 박종섭 | 바이폴라트랜지스터를 이용한 이미지센서의 제조 방법 |
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- 2005-12-27 KR KR1020050130457A patent/KR100752405B1/ko not_active IP Right Cessation
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Publication number | Publication date |
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KR100752405B1 (ko) | 2007-08-28 |
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