KR100752405B1 - 저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 - Google Patents
저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 Download PDFInfo
- Publication number
- KR100752405B1 KR100752405B1 KR1020050130457A KR20050130457A KR100752405B1 KR 100752405 B1 KR100752405 B1 KR 100752405B1 KR 1020050130457 A KR1020050130457 A KR 1020050130457A KR 20050130457 A KR20050130457 A KR 20050130457A KR 100752405 B1 KR100752405 B1 KR 100752405B1
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- South Korea
- Prior art keywords
- photodiode
- image sensor
- cmos image
- present
- pixel
- Prior art date
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- 238000010586 diagram Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
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- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (3)
- CMOS 이미지 센서의 픽셀 어레이를 구성하는 픽셀부에 있어서,빛에 노출시켜 전하를 집적하기 위한 제1포토 다이오드; 및상기 제1포토 다이오드가 집적한 전하를 임시로 저장하기 위한 제2포토 다이오드를 포함하되,상기 제2포토 다이오드가 상기 픽셀 어레이의 각 컬럼별 노출이 같은 시간에 이루어지도록 상기 제1포토 다이오드가 집적한 전하를 저장하는 것을 특징으로 하는 CMOS 이미지 센서의 픽셀부.
- 삭제
- 제1항에 있어서, 상기 제2포토 다이오드는, 차폐된 것을 특징으로 하는 CMOS 이미지 센서의 픽셀부.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020050130457A KR100752405B1 (ko) | 2005-12-27 | 2005-12-27 | 저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020050130457A KR100752405B1 (ko) | 2005-12-27 | 2005-12-27 | 저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 |
Publications (2)
Publication Number | Publication Date |
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KR20070068624A KR20070068624A (ko) | 2007-07-02 |
KR100752405B1 true KR100752405B1 (ko) | 2007-08-28 |
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KR1020050130457A KR100752405B1 (ko) | 2005-12-27 | 2005-12-27 | 저장용 포토 다이오드를 이용한 cmos 이미지 센서의픽셀부 |
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KR (1) | KR100752405B1 (ko) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010061311A (ko) * | 1999-12-28 | 2001-07-07 | 박종섭 | 바이폴라트랜지스터를 이용한 이미지센서의 제조 방법 |
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- 2005-12-27 KR KR1020050130457A patent/KR100752405B1/ko not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010061311A (ko) * | 1999-12-28 | 2001-07-07 | 박종섭 | 바이폴라트랜지스터를 이용한 이미지센서의 제조 방법 |
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KR20070068624A (ko) | 2007-07-02 |
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