KR20070053234A - 반도체 장치에 있어서 금속 규화물의 단방향 확산 - Google Patents

반도체 장치에 있어서 금속 규화물의 단방향 확산 Download PDF

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Publication number
KR20070053234A
KR20070053234A KR1020077004641A KR20077004641A KR20070053234A KR 20070053234 A KR20070053234 A KR 20070053234A KR 1020077004641 A KR1020077004641 A KR 1020077004641A KR 20077004641 A KR20077004641 A KR 20077004641A KR 20070053234 A KR20070053234 A KR 20070053234A
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South Korea
Prior art keywords
metal
silicide
temperature
alloy layer
layer
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Abandoned
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KR1020077004641A
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English (en)
Korean (ko)
Inventor
안토니 도메니쿠치
브레들리 조네스
크리스티안 라보이에
로버트 퓨텔
윤 유 왕
궝 혼 웡
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR20070053234A publication Critical patent/KR20070053234A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation

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  • Electrodes Of Semiconductors (AREA)
KR1020077004641A 2004-09-14 2005-08-18 반도체 장치에 있어서 금속 규화물의 단방향 확산 Abandoned KR20070053234A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/711,365 2004-09-14
US10/711,365 US7208414B2 (en) 2004-09-14 2004-09-14 Method for enhanced uni-directional diffusion of metal and subsequent silicide formation

Publications (1)

Publication Number Publication Date
KR20070053234A true KR20070053234A (ko) 2007-05-23

Family

ID=35170075

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077004641A Abandoned KR20070053234A (ko) 2004-09-14 2005-08-18 반도체 장치에 있어서 금속 규화물의 단방향 확산

Country Status (7)

Country Link
US (2) US7208414B2 (cg-RX-API-DMAC7.html)
EP (1) EP1800332A1 (cg-RX-API-DMAC7.html)
JP (1) JP2008513977A (cg-RX-API-DMAC7.html)
KR (1) KR20070053234A (cg-RX-API-DMAC7.html)
CN (1) CN100505168C (cg-RX-API-DMAC7.html)
TW (1) TW200616051A (cg-RX-API-DMAC7.html)
WO (1) WO2006029950A1 (cg-RX-API-DMAC7.html)

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JP2006147897A (ja) * 2004-11-22 2006-06-08 Samsung Electronics Co Ltd 半導体装置の製造方法
US7238611B2 (en) * 2005-04-13 2007-07-03 United Microelectronics Corp. Salicide process
KR100715267B1 (ko) * 2005-06-09 2007-05-08 삼성전자주식회사 스택형 반도체 장치 및 그 제조 방법
US7419907B2 (en) * 2005-07-01 2008-09-02 International Business Machines Corporation Eliminating metal-rich silicides using an amorphous Ni alloy silicide structure
US7538029B2 (en) * 2005-07-06 2009-05-26 International Business Machines Corporation Method of room temperature growth of SiOx on silicide as an etch stop layer for metal contact open of semiconductor devices
JP2007067225A (ja) * 2005-08-31 2007-03-15 Toshiba Corp 半導体装置およびその製造方法
JP4755894B2 (ja) * 2005-12-16 2011-08-24 株式会社東芝 半導体装置およびその製造方法
US7485572B2 (en) * 2006-09-25 2009-02-03 International Business Machines Corporation Method for improved formation of cobalt silicide contacts in semiconductor devices
US7622386B2 (en) * 2006-12-06 2009-11-24 International Business Machines Corporation Method for improved formation of nickel silicide contacts in semiconductor devices
US7553762B2 (en) * 2007-02-09 2009-06-30 United Microelectronics Corp. Method for forming metal silicide layer
JP5214261B2 (ja) * 2008-01-25 2013-06-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR101384111B1 (ko) * 2009-01-09 2014-04-10 주식회사 에스앤에스텍 블랭크 마스크, 이를 이용하는 포토 마스크 및 이를 제조하는 방법
JP5332947B2 (ja) * 2009-06-25 2013-11-06 富士通セミコンダクター株式会社 半導体装置の製造方法
US8021982B2 (en) 2009-09-21 2011-09-20 International Business Machines Corporation Method of silicide formation by adding graded amount of impurity during metal deposition
CN102044422B (zh) * 2009-10-19 2012-07-04 中芯国际集成电路制造(上海)有限公司 自对准金属硅化物的形成方法
CN102110624B (zh) * 2009-12-23 2012-05-30 中芯国际集成电路制造(上海)有限公司 检测镍铂去除装置的方法
CN101764058B (zh) * 2009-12-31 2013-07-31 复旦大学 形成超薄可控的金属硅化物的方法
US8304319B2 (en) * 2010-07-14 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making a disilicide
CN102427052B (zh) * 2011-11-03 2013-12-18 上海新傲科技股份有限公司 具有高效复合中心的soi材料衬底及其制备方法
CN103137462B (zh) * 2011-11-25 2015-11-25 中芯国际集成电路制造(上海)有限公司 自对准金属硅化物的形成方法
CN104934468B (zh) * 2014-03-17 2018-07-20 中芯国际集成电路制造(上海)有限公司 栅极及其制作方法
US9865466B2 (en) * 2015-09-25 2018-01-09 Applied Materials, Inc. Silicide phase control by confinement
JP2018078212A (ja) * 2016-11-10 2018-05-17 三重富士通セミコンダクター株式会社 半導体装置の製造方法
US10453750B2 (en) 2017-06-22 2019-10-22 Globalfoundries Inc. Stacked elongated nanoshapes of different semiconductor materials and structures that incorporate the nanoshapes
CN114334985B (zh) * 2020-10-12 2025-07-04 华邦电子股份有限公司 存储元件及其形成方法
US20220352337A1 (en) * 2020-11-27 2022-11-03 Innoscience (suzhou) Semiconductor Co., Ltd. Semiconductor device and manufacturing method thereof
CN120577169B (zh) * 2025-06-20 2026-07-24 中国恩菲工程技术有限公司 一种玻璃基体中金属元素迁移能力的检测方法

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US5027185A (en) * 1988-06-06 1991-06-25 Industrial Technology Research Institute Polycide gate FET with salicide
US5536684A (en) * 1994-06-30 1996-07-16 Intel Corporation Process for formation of epitaxial cobalt silicide and shallow junction of silicon
US5780361A (en) 1995-06-23 1998-07-14 Nec Corporation Salicide process for selectively forming a monocobalt disilicide film on a silicon region
US5780362A (en) * 1996-06-04 1998-07-14 Wang; Qingfeng CoSi2 salicide method
US6022801A (en) * 1998-02-18 2000-02-08 International Business Machines Corporation Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film
US6323130B1 (en) * 2000-03-06 2001-11-27 International Business Machines Corporation Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridging
US6413859B1 (en) * 2000-03-06 2002-07-02 International Business Machines Corporation Method and structure for retarding high temperature agglomeration of silicides using alloys
US6251779B1 (en) * 2000-06-01 2001-06-26 United Microelectronics Corp. Method of forming a self-aligned silicide on a semiconductor wafer
US6605513B2 (en) * 2000-12-06 2003-08-12 Advanced Micro Devices, Inc. Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
US6444578B1 (en) * 2001-02-21 2002-09-03 International Business Machines Corporation Self-aligned silicide process for reduction of Si consumption in shallow junction and thin SOI electronic devices
JP3515556B2 (ja) * 2001-12-04 2004-04-05 株式会社東芝 プログラマブル素子、プログラマブル回路及び半導体装置
US6657244B1 (en) * 2002-06-28 2003-12-02 International Business Machines Corporation Structure and method to reduce silicon substrate consumption and improve gate sheet resistance during silicide formation
US6905560B2 (en) * 2002-12-31 2005-06-14 International Business Machines Corporation Retarding agglomeration of Ni monosilicide using Ni alloys

Also Published As

Publication number Publication date
US7208414B2 (en) 2007-04-24
CN1989598A (zh) 2007-06-27
CN100505168C (zh) 2009-06-24
JP2008513977A (ja) 2008-05-01
US20070128867A1 (en) 2007-06-07
WO2006029950A1 (en) 2006-03-23
TW200616051A (en) 2006-05-16
US20060057844A1 (en) 2006-03-16
EP1800332A1 (en) 2007-06-27

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