KR20070048943A - 가지형 나노 와이어의 제조방법 - Google Patents
가지형 나노 와이어의 제조방법 Download PDFInfo
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- KR20070048943A KR20070048943A KR1020050106048A KR20050106048A KR20070048943A KR 20070048943 A KR20070048943 A KR 20070048943A KR 1020050106048 A KR1020050106048 A KR 1020050106048A KR 20050106048 A KR20050106048 A KR 20050106048A KR 20070048943 A KR20070048943 A KR 20070048943A
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- nanowires
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- 239000002070 nanowire Substances 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 239000007787 solid Substances 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 31
- 239000003054 catalyst Substances 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 6
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 230000005484 gravity Effects 0.000 claims description 2
- 125000005842 heteroatom Chemical group 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
- 239000002096 quantum dot Substances 0.000 abstract description 8
- 230000005669 field effect Effects 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 14
- 239000010931 gold Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000011148 porous material Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 239000002071 nanotube Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 229910052723 transition metal Inorganic materials 0.000 description 4
- 150000003624 transition metals Chemical class 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010028980 Neoplasm Diseases 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 201000011510 cancer Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011005 laboratory method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (13)
- (a) SLS(solid-liquid-solid)법을 이용하여 나노 와이어 내부에 금속 나노닷 들을 포함하는 제 1 나노 와이어를 제조하는 단계;(b) 상기 금속 나노닷들이 노출되도록 에칭하는 단계; 및(c) 반응로에 넣고 가열하여 제 2 나노 와이어를 형성하는 단계를 포함하는 가지형 나노 와이어의 제조방법.
- 제 1항에 있어서, 상기 (a) 단계가기판 위에 금속 촉매를 코팅하는 제 1 단계;코팅된 기판을 반응로에 넣고 기체를 주입하면서 기판상의 금속이 나노와이어 성장시 내부로 포함될 수 있도록 힘을 가하며 가열하는 제 2 단계; 및기판으로부터 확산된 와이어 소스로 나노 와이어를 형성시키는 제 3 단계를 포함하는 것을 특징으로 하는 방법.
- 제 2항에 있어서, 상기 제 1 단계의 기판이 실리콘 기판, 또는 유리, 플라스틱 위에 실리콘을 코팅한 기판인 것을 특징으로 하는 방법.
- 제 2항에 있어서, 상기 제 1 단계의 금속 촉매가 Au, Ni, Fe, Ag, Pd, 및 Pd/Ni로 이루어진 군에서 선택되는 것을 특징으로 하는 방법.
- 제 2항에 있어서, 상기 제 1 단계의 금속 촉매가 나노입자 또는 박막의 형태로 코팅되는 것을 특징으로 하는 방법.
- 제 2항에 있어서, 상기 제 1 단계의 코팅 공정이 화학 기상 증착법(CVD), 스퍼터링(sputtering), e-빔 증착(e-beam evaporation), 진공증착법, 스핀 코팅(spin coating), 딥핑(dipping) 방법으로 수행되는 것을 특징으로 하는 방법.
- 제 2항에 있어서, 상기 제 1 단계의 코팅층의 두께가 50nm 이하인 것을 특징으로 하는 방법.
- 제 2항에 있어서, 상기 제 2 단계의 기체가 Ar, N2, He, 및 H2로 이루어진 군에서 선택되는 것을 특징으로 하는 방법.
- 제 2항에 있어서, 상기 제 2 단계의 가열 공정이 760torr 이하, 800~1200℃에서 수행되는 것을 특징으로 하는 방법.
- 제 2항에 있어서, 상기 제 2 단계에서 가해지는 힘이 중력, 전기장(electric field), 또는 기계적 힘(mechanical force)인 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 (b) 단계의 에칭 공정이 아세톤, 이소프로필알콜, HF, HNO3, H3PO4, H2O2, KOH로 이루어진 군에서 선택되는 에칭액을 사용하는 습식 에칭법 또는 SF6, HF, CF4, SiH4, O2로 이루어진 군에서 선택되는 에칭가스를 사용하는 건식 에칭법에 의해 수행되는 것을 특징으로 하는 방법.
- 제 1항에 있어서, 상기 (c) 단계의 제 2 나노 와이어가 제 1 나노 와이어와 동종(homo) 또는 이종(hetero)인 물질로 형성되는 것을 특징으로 하는 방법.
- 제 12항에 있어서, 상기 제 1 나노 와이어가 실리콘으로 형성되고, 제 2 나노 와이어가 III-V 족 화합물, 탄소나노튜브(CNT), 산화아연(ZnO), 실리콘 카바이드(SiC)로 이루어진 군에서 선택된 이종(hetero)인 물질로 형성되는 것을 특징으로 하는 방법.
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KR1020050106048A KR101102098B1 (ko) | 2005-11-07 | 2005-11-07 | 가지형 나노 와이어의 제조방법 |
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KR1020050106048A KR101102098B1 (ko) | 2005-11-07 | 2005-11-07 | 가지형 나노 와이어의 제조방법 |
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KR20070048943A true KR20070048943A (ko) | 2007-05-10 |
KR101102098B1 KR101102098B1 (ko) | 2012-01-02 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100853200B1 (ko) * | 2007-04-11 | 2008-08-20 | 한국전자통신연구원 | 다중 구조의 나노와이어 및 그 제조방법 |
CN103030100A (zh) * | 2013-01-09 | 2013-04-10 | 华北电力大学 | 一种具有减反射特性的亚波长硅纳米线阵列的制备方法 |
US8513641B2 (en) | 2008-08-05 | 2013-08-20 | Samsung Electronics Co., Ltd. | Core-shell nanowire comprising silicon rich oxide core and silica shell |
US8679949B2 (en) | 2010-04-02 | 2014-03-25 | Samsung Electronics Co., Ltd. | Silicon nanowire comprising high density metal nanoclusters and method of preparing the same |
US8698122B2 (en) | 2010-04-02 | 2014-04-15 | Samsung Electronics Co., Ltd. | Silicon nanowire comprising high density metal nanoclusters and method of preparing the same |
US8962137B2 (en) | 2008-10-07 | 2015-02-24 | Samsung Electronics Co., Ltd. | Branched nanowire and method for fabrication of the same |
KR20150090958A (ko) | 2014-01-29 | 2015-08-07 | 국립대학법인 울산과학기술대학교 산학협력단 | 이종 접합 가지형 나노와이어를 구비한 발광다이오드 |
KR20160080780A (ko) * | 2014-12-30 | 2016-07-08 | 광운대학교 산학협력단 | 실리콘 나노 와이어 형성 방법 |
KR102355044B1 (ko) * | 2021-10-12 | 2022-01-24 | 한국세라믹기술원 | Co2 자원화를 위한 광대역 흡수 및 고비표면적 광전극 구조물 및 그 제조 방법 |
Families Citing this family (1)
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CN103531441B (zh) * | 2013-10-23 | 2016-05-04 | 中国科学院半导体研究所 | 基于分叉纳米线的多端量子调控器件的制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100759547B1 (ko) * | 2002-07-29 | 2007-09-18 | 삼성에스디아이 주식회사 | 연료전지용 탄소나노튜브, 그 제조방법 및 이를 채용한연료전지 |
KR100432874B1 (ko) * | 2003-11-28 | 2004-06-01 | (주)나노텍 | 나노와이어가 결정성장된 반도체기판 및 나노와이어의결정성장공정 |
KR100708540B1 (ko) * | 2004-02-09 | 2007-04-18 | (주)케이에이치 케미컬 | Y-분지형 탄소나노튜브의 제조 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100853200B1 (ko) * | 2007-04-11 | 2008-08-20 | 한국전자통신연구원 | 다중 구조의 나노와이어 및 그 제조방법 |
US8513641B2 (en) | 2008-08-05 | 2013-08-20 | Samsung Electronics Co., Ltd. | Core-shell nanowire comprising silicon rich oxide core and silica shell |
US8962137B2 (en) | 2008-10-07 | 2015-02-24 | Samsung Electronics Co., Ltd. | Branched nanowire and method for fabrication of the same |
US8679949B2 (en) | 2010-04-02 | 2014-03-25 | Samsung Electronics Co., Ltd. | Silicon nanowire comprising high density metal nanoclusters and method of preparing the same |
US8698122B2 (en) | 2010-04-02 | 2014-04-15 | Samsung Electronics Co., Ltd. | Silicon nanowire comprising high density metal nanoclusters and method of preparing the same |
CN103030100A (zh) * | 2013-01-09 | 2013-04-10 | 华北电力大学 | 一种具有减反射特性的亚波长硅纳米线阵列的制备方法 |
KR20150090958A (ko) | 2014-01-29 | 2015-08-07 | 국립대학법인 울산과학기술대학교 산학협력단 | 이종 접합 가지형 나노와이어를 구비한 발광다이오드 |
KR20160080780A (ko) * | 2014-12-30 | 2016-07-08 | 광운대학교 산학협력단 | 실리콘 나노 와이어 형성 방법 |
KR102355044B1 (ko) * | 2021-10-12 | 2022-01-24 | 한국세라믹기술원 | Co2 자원화를 위한 광대역 흡수 및 고비표면적 광전극 구조물 및 그 제조 방법 |
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