KR20070045751A - Mask for photo lithography - Google Patents

Abstract

The present invention relates to a photomask used in the manufacture of an array substrate for a liquid crystal display device, and more particularly, to a transmission region for completely transmitting light, which is used in the manufacture of an array substrate for a liquid crystal display device having a channel structure of a "⊂" type, A photomask having a blocking region completely blocked and a semi-transmissive region in which light transmission is smaller than that of the transmission region, wherein the photomask is formed in the shape of the channel region corresponding to the channel region of the "⊂" shape and transmits light. A half having a plurality of first bars blocking, a plurality of first slits alternated with the plurality of first bars, and a plurality of second slits formed in the first bar. A photo mask having a transmissive area is provided.

Therefore, in the scan type exposure using the photomask according to the present invention, a short defect between the source and drain electrodes is formed by forming a photoresist pattern having a uniform thickness over the entire area of the channel having a "⊂" shape regardless of the scanning direction. It has the effect of improving the productivity of manufacturing the array substrate by preventing the.

Photomask, channel structure, diffraction exposure, double slit structure

Description

Mask for photo lithography

1 is an exploded perspective view of a general liquid crystal display device.

FIG. 2 is a plan view showing a portion of a conventional photo mask used in the manufacture of an array substrate, having a "⊂" type channel region; FIG.

FIG. 3 is a cross-sectional view of a photoresist pattern on an array substrate subjected to exposure and development through portions cut along section line III-III of FIG. 2;

4 is a cross-sectional view showing a photoresist pattern on an array substrate subjected to exposure and development through a portion cut along FIG. 2 along cut line IV-IV.

5 is a plan view of a region corresponding to a channel region of an array substrate for a liquid crystal display of a photomask according to a first embodiment of the present invention;

6 is a plan view of a region corresponding to a channel region of an array substrate for a liquid crystal display of a photomask according to a modification of the first embodiment of the present invention;

7 is a plan view of a region corresponding to a channel region of an array substrate for a liquid crystal display of a photomask according to a second embodiment of the present invention;

8 is a plan view of a region corresponding to a channel region of an array substrate for a liquid crystal display of a photomask according to a modification of the second embodiment of the present invention;

9A and 9G are cross-sectional views illustrating a process of fabricating an array substrate for a liquid crystal display device using a photo mask according to the present invention, and manufacturing a single pixel region including a thin film transistor having a channel structure of a “⊂” type. Process cross section by step.

<Description of Symbols for Main Parts of Drawings>

101: photo mask 110: data wiring corresponding area

115: source electrode correspondence region 118: drain electrode correspondence region

120: first bar 123: first slit

128: second bar 130: second slit

BA: blocking area HTA: transflective area

TA: transmission area W1: width of first bar

W3: width of channel area

The present invention relates to a photomask for manufacturing an array substrate for a liquid crystal display device and a method for manufacturing an array substrate using the same.

In general, a liquid crystal display device is formed by arranging two substrates having electrodes formed on one surface thereof so that the surfaces on which the two electrodes are formed face each other, injecting a liquid crystal material between the two substrates, and then applying a voltage to the two electrodes. By moving the liquid crystal molecules by an electric field, the device expresses an image by the transmittance of light that varies accordingly.

A liquid crystal display device may be formed in various forms. Currently, an active matrix LCD (AM-LCD) having a thin film transistor and pixel electrodes connected to the thin film transistors arranged in a matrix manner has excellent resolution and video performance. The most attention is.

Recently, liquid crystal displays have been spotlighted as next generation advanced display devices having low power consumption, good portability, high technology value, and high added value.

Among the liquid crystal display devices, an active matrix liquid crystal display device having a thin film transistor, which is a switching element that can control voltage on and off for each pixel, has the best resolution and video performance. I am getting it.

In general, a liquid crystal display device forms an array substrate and a color filter substrate through an array substrate manufacturing process for forming a thin film transistor and a pixel electrode and a color filter substrate manufacturing process for forming a color filter and a common electrode, and between the two substrates. It completes through the liquid crystal cell process through liquid crystal in the process.

1 is an exploded perspective view of a general liquid crystal display device.

As shown in the drawing, a general liquid crystal display device has a configuration in which the array substrate 10 and the color filter substrate 80 face each other with the liquid crystal layer 70 interposed therebetween. 1 includes a plurality of gate wirings 15 and data wirings 40 vertically and horizontally arranged on the insulating substrate 11 and upper surfaces thereof to define a plurality of pixel regions P, and these two wirings 15 and 40 A thin film transistor Tr, which is a switching element, is provided at an intersection point and is connected one-to-one with a pixel electrode 65 provided in each pixel region P.

In addition, the upper color filter substrate 80 facing the array substrate 10 is a transparent second insulating substrate 81 and a rear surface thereof, the gate wiring 15, the data wiring 40, and the thin film transistor Tr. A grid-like black matrix 85 is formed to cover the non-display areas such as the pixels and the like, and is sequentially arranged to correspond to each pixel area P in the grid of the black matrix 85. The red, green, and blue color filter patterns 89 (89a, 89b, and 89c) arranged repeatedly are formed, and the black matrix 85 and the red, green, and blue color filter patterns 89 are disposed over the entire surface. The transparent common electrode 92 is provided.

In addition, first and second polarizers (not shown) for transmitting only light parallel to the polarization axis are positioned on each of the outer surfaces of the array substrate 10 and the color filter substrate 80, and beneath the first polarizer (not shown). A back light (not shown), which is a separate light source, is disposed.

In the liquid crystal display device having such a structure, in particular, the array substrate, which is the lower substrate of the liquid crystal display device, is formed by repeating a process of depositing a thin film and etching the photo using a mask several times. Chapter 6 is used.

However, the increase in the mask process results in an increase in the manufacturing cost, and thus, in the manufacture of the array substrate, much effort has been made to reduce the mask process, more precisely, the number of masks used to manufacture the array substrate.

A mask having a slit structure is partially used to manufacture an array substrate through a four-mask process, which is partially applied by diffraction exposure by the slit corresponding to a portion having the slit structure in exposure after applying a photoresist. In order to form a photoresist pattern having a different thickness depending on the portion by varying the exposure amount, there is a problem in that a thickness difference of the photoresist pattern occurs in the scan direction for exposure even for a portion having the same slit structure in the mask.

FIG. 2 shows a portion of a conventional photo mask used in the fabrication of an array substrate characterized by having a "⊂" type channel region, and FIG. 3 shows a portion cut along the line III-III of FIG. 4 is a cross-sectional view illustrating a photoresist pattern on an array substrate subjected to exposure and development, and FIG. 4 illustrates a photoresist pattern on an array substrate undergoing exposure and development through a portion cut along the cutting line IV-IV of FIG. 2. One cross section.

First, referring to FIG. 2, in the photo mask 51 according to the present invention, a portion corresponding to the source and drain electrodes 57 and 60 and the data line 55 may include a blocking area BA. It can be seen that the semi-transmissive region HTA having a slit structure is formed in the channel region ch of the “⊂” type, and the transmissive region TA is formed in the other region.

When performing exposure in a scan type through the photo mask 51, the scanning direction proceeds in the x direction as shown in the drawing, and A corresponding to the direction parallel to or perpendicular to the scan direction x. For the B region, referring to FIG. 3, a first photoresist pattern 63a having a desired first thickness t1 is formed in a photoresist layer (not shown) on the substrate 70 during post-exposure development. For the exposed photoresist layer (not shown) in the region C having an angle of about 45 degrees with respect to (x), when it is developed, as shown in FIG. Thinner than the second photoresist pattern 65 having the thickest second thickness t2, but the first thickness t1 of the first photoresist pattern 63a formed in the A region forming the same channel region ch. A third having a third thickness t3 thicker than Photoresist pattern (63b) is formed it can be seen.

In the channel region ch, when the patterning is performed using the photoresist patterns 63a and 63b having different thicknesses t1 and t3, an impurity amorphous to form the metal layer 78 and a later ohmic contact layer thereunder. Underetching or overetching the silicon layer 75 causes a short between source and drain electrodes after patterning during the underetching, and active of pure amorphous silicon during the overetching. By etching to the layer, there is a problem in that a defect that does not operate as a thin film transistor or deteriorates in characteristics occurs.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to change the shape of a mask used for fabricating an array substrate by a four-mask process so that a photo having a constant thickness even after scanning exposure to a channel region. It is to provide a photomask having a structure that a resist pattern can form.

In addition, another object of the present invention is to provide a method of manufacturing an array substrate through a four mask process using a photo mask having such a structure, thereby improving productivity by reducing defect rates.

The photomask for manufacturing an array substrate for a liquid crystal display device according to the present invention for achieving the above object is used in the manufacture of an array substrate for a liquid crystal display device having a channel structure of the "⊂" type, and a transmission region that completely transmits light; And a photomask having a blocking region to completely block and a semi-transmissive region in which light transmission is smaller than that of the transmission region, wherein the photomask is formed in the shape of the channel region corresponding to the channel region of the "⊂" shape and transmits light. And a plurality of first bars for blocking the plurality of first bars, and a plurality of first slits alternately formed with the plurality of first bars, and a plurality of second slits formed in the first bar. It is characterized by having a transflective area.

At this time, the channel region of the "⊂" type is characterized in that all four portions are formed to form an obtuse angle larger than the right angle, in this case, in the "bar" type second bar (bar), all four portions are obtuse angle When defined as the first to the fifth unit bar (bar) as each unit element on the basis of the bent portion, the plurality of second slits, the first and fifth unit bar (bar) arranged in parallel with each other ) And second and fourth unit bars respectively connected to third unit bars perpendicular to the second unit bars, wherein the plurality of second slits are formed in the second or fourth unit. In the bar, respectively parallel to the width direction of the second or fourth unit bar (bar) or in the second or fourth unit bar (bar), respectively, the second or fourth unit It is characterized by being formed parallel to the longitudinal direction of the bar (bar).

In addition, a semi-transmissive region having a double slit structure corresponding to the channel region of the " 형태 " type has a blocking region corresponding to a portion where data lines, a source and a drain electrode are formed, and a transmissive region corresponding to other regions. Characterized in that formed. In addition, the semi-transmissive region having a double slit structure corresponding to the channel region of the " 형태 " has a transmissive region corresponding to the portion where the data wiring, the source and the drain electrode are formed, and a blocking region corresponding to the other region. Characterized in that formed.

A method of manufacturing an array substrate for a liquid crystal display device using a photo mask according to the present invention includes forming a gate wiring and a gate electrode on a substrate; Sequentially forming a gate insulating layer, a pure amorphous silicon layer, an impurity amorphous silicon layer, and a metal material layer on the gate wiring and the gate electrode; Forming a photoresist layer over the metal material layer; Positioning the photomask according to any one of claims 1 to 5 over the photoresist layer, exposing and developing the portion of the channel to form a "⊂" shape corresponding to the semi-transmissive region of the mask A first photoresist pattern having a first thickness substantially uniform with respect to the first photoresist pattern is formed, and at the same time, a second photoresist pattern having a second thickness thicker than the first thickness is formed for the portion where the data line and the source and drain electrodes are to be formed. Making a step; Removing the metal material layer, the impurity amorphous silicon layer, and the pure amorphous silicon layer exposed to the outside of the first and second photoresist patterns; Removing the first photoresist pattern; The first photoresist pattern is removed to remove the exposed metal material layer and the impurity amorphous silicon layer thereunder, thereby forming data lines, source and drain electrodes spaced apart from each other, and ohmic contact layers of impurity amorphous silicon spaced apart from each other. It includes a step.

The method may further include forming a protective layer having a drain contact hole exposing the drain electrode over the data line, the source and drain electrodes, and the ohmic contact layer after forming the ohmic contact layer. The method may further include forming a pixel electrode on the protective layer, the pixel electrode contacting the drain electrode through the drain contact hole.

Hereinafter, a photomask for manufacturing an array substrate for a liquid crystal display device according to an exemplary embodiment of the present invention will be described in detail with reference to the accompanying drawings.

<First Embodiment>

5 is a plan view of a region corresponding to a channel region of an array substrate for a liquid crystal display device of a photomask according to a first embodiment of the present invention.

As illustrated, the photomask 101 for manufacturing an array substrate for a liquid crystal display device according to the first embodiment of the present invention may have regions 110 and source and drain electrodes corresponding to data wirings on an array substrate (not shown), respectively. For the portions 115 and 118 corresponding to the cutoff region BA, and the channel region ch of the "⊂" type-at this time, the channel region of the "부분" type has four bent portions. And, it has a structure bent in a straight form rather than a curved form, it is characterized in that all four parts are formed to form an obtuse angle larger than the right angle. A corresponding area A and B located in a direction parallel or perpendicular to the scan direction x, and a C area having an angle of about 45 degrees with respect to the scan direction x. A first bar 120 having a width w1 is formed in the shape of "⊂" along the shape of the channel region ch, so that the "bar" based on the first bar 120 is defined. Two first slits 123 are formed at both sides of the channel region ch, and the first bar 120 is formed in the C region having an angle of about 45 degrees with respect to the scan direction x. ) Is a second width parallel to the width direction of the first bar 120, i.e., a second width thinner than the first width w1 with an angle of about 45 degrees with respect to the scan direction x in the drawing. Since a plurality of second bars 128 having w2 are formed, a plurality of third slits 130 are formed in the first bar 120.

That is, the first bar 120 having the first width w1 having the same width along the shape of the channel region ch is formed at the center of the channel region ch. (120) Two first slits 123 are formed at equal sides on both sides, and two Cs having an angle of ± 45 degrees with respect to the scan direction x are formed in the first bar 120. A plurality of second bars 128 having a second width w2 are formed in the first bar 120 formed in the region, spaced apart from each other by a predetermined interval. As a result, a double slit structure having different directions from each other is a characteristic aspect of the photomask 101 according to the first embodiment of the present invention.

In the drawing, only one first bar 120 having the same shape along the channel region ch is formed at the center thereof, but according to the model, the width w3 of the channel region ch is determined. In the case of forming a wider, a plurality of first bars 120 having the first width w1 may be formed at a predetermined interval, and in this case, two or more first slits 123 may be formed. In this case, a plurality of second slits 130 are formed in the C region of each of the plurality of first bars 120.

When manufacturing the array substrate using the photo mask 101 having the structure as described above, C having an angle of about 45 degrees with respect to the scanning direction (x) and the first bar (120) is formed Also in the region, a photoresist pattern having a thickness substantially the same as that of the photoresist patterns formed in the A and B regions is formed more accurately. Since under etch and over etch do not occur, a short defect between the source and drain electrodes is caused. In addition, it is possible to prevent defects such as the loss of the active layer and the inability to act as a thin film transistor.

The photomask 101 according to the first embodiment described above has a characteristic that the blocking region BA is formed in the regions 115, 118, and 110 corresponding to the source and drain electrodes and the data wiring, and thus is removed when the light is received. An example of the form in the case of performing a mask process using a positive type photoresist layer having a negative type, and as a variation, a negative type photoresist layer having a characteristic that a portion to which light is left during development is left. 6, the photomask 102 according to the modified example of the first embodiment of the present invention has a source and a drain electrode, as shown in FIG. 6 (the same reference numerals are assigned to the same components as the first embodiment). The transmissive area TA is formed in the regions 115, 118, and 110 corresponding to the data lines and the first width is formed in the channel region ch along the channel shape having a "⊂" shape as described in the first embodiment. (w1 Since a plurality of first bars 120 having a plurality of first bars 120 are formed, a plurality of first slits 123 are formed, and the plurality of first bars 120 have a scan direction x. A large number of second slits 123 having a predetermined width are formed in the C portion formed at about +/- 45 degrees, and a structure in which the blocking area BA is formed in correspondence with other areas.

When the photomask 102 and the negative type photoresist according to the modification of the first embodiment described above are exposed and developed on a substrate, the same as in the first embodiment, the entire channel region is uniform. A photoresist pattern having a thickness can be formed.

Second Embodiment

7 and 8 are plan views of regions corresponding to channel regions of an array substrate for a liquid crystal display of a photo mask according to a second embodiment of the present invention and variations thereof. In this case, the same reference numerals are given to the same components for the second embodiment and its modifications.

First, referring to FIG. 7, the photomask 201 according to the second embodiment of the present invention will be described. The photomask 201 according to the second embodiment is patterned by using a positive type photoresist. In this case, the photomask structure is used. The blocking area BA corresponds to the source and drain electrodes of the array substrate and the portions 215, 218, and 210 to form the data wiring, and between the source and drain electrodes. The third bar 220 having a fourth width w4 at the center of the channel region ch corresponds to the channel region ch of the " ⊂ " shape of the channel region ch. According to the drawings, only one is formed, but one or more are formed in accordance with the size of the channel width (w5) according to the model between the third bar (220) and the third bar (220) (220) And between regions 215 and 218 corresponding to the source and drain electrodes. Two or more third slits 223 having a plurality of identical widths are formed, and the angle is about ± 45 degrees instead of perpendicular or parallel to the scan direction x in the third bar 220. In the C portion formed with a shape, the C bar is formed in a direction parallel to the longitudinal direction (y or -y direction) of the third bar 220, that is, in a direction in which the third bar 220 extends. A plurality of fourth slits 230 are formed, and the other area is characterized in that the transmission area TA is formed.

Comparing the second embodiment of the present invention to the first embodiment, the other parts have the same shape, and the first bar (120 in FIG. 5) or the third bar (220 in FIG. 7) Has an angle of about 45 degrees with respect to the scan direction x, and only the directions in which the plurality of second and fourth slits (130 in FIG. 5 and 230 in FIG. 7) formed in the formed region C are different from each other. When the mask process is performed using the photomask 201 of the second embodiment, the same effects as those of the first embodiment can be obtained.

Next, referring to FIG. 8, a modification according to the second embodiment of the present invention will be described. As shown, the photomask 202 according to the modification of the second embodiment of the present invention has a negative type. ) Used for patterning using photoresist, the transmission area TA for the regions 215, 218, and 210 corresponding to the source and drain electrodes and the data wiring; The plurality of third bars 223 are formed by forming a plurality of third bars 220 having a fourth width w4 along the channel shape, and the plurality of third bars 220. In the C part formed at about 45 degrees with respect to the scan direction (x), a plurality of fourth slits 230 having a predetermined width extend in the direction (y direction or -y direction) of the third bar 220. Direction) and the structure in which the blocking area BA is formed corresponding to the other areas It is becoming.

Next, a brief description will be given of a method of manufacturing an array substrate for a liquid crystal display device by a four mask process using the photo mask according to the first and second embodiments and modifications thereof described above.

9A and 9G illustrate a cross-sectional view of an array substrate for a liquid crystal display device having a thin film transistor having a channel structure of a “⊂” shape, according to a manufacturing step of one pixel region including the thin film transistor.

First, as illustrated in FIG. 9A, a first metal material is deposited on a transparent insulating substrate 310 such as glass, and patterned using a first mask, thereby forming a horizontal gate wiring (not shown) and the gate wiring ( A gate electrode 315 extending from the gate electrode 315 is formed. Here, the first metal material may be a material having a relatively low resistance, and may be formed of a double layer of chromium (Cr) and aluminum (AL) or chromium (Cr) and aluminum alloy (AlNd).

Next, as shown in FIG. 9B, a gate insulating layer 320, a pure amorphous silicon layer 325, and an impurity amorphous silicon layer 330 are sequentially deposited on the gate line and the gate electrode 315. The metal layer 335 is formed by depositing a second metal material thereon, and a photoresist is applied to form a photoresist layer (not shown). Thereafter, the photoresist layer (not shown) is exposed using a second mask 390 having a double slit structure according to the present invention (photo mask (101 in FIG. 5) according to the first embodiment of the present invention), This is developed to form first and second photoresist patterns 381 and 382 having different thicknesses t11 and t12.

Here, the first photoresist pattern 381 having the thickest first thickness t11 is formed in the portion where the data line and the source and drain electrodes are to be formed, and the first region is formed in the channel region ch between the source and drain electrodes. A second photoresist pattern 382 having a second thickness t12 that is thinner than the photoresist pattern 381 is formed, and the remaining portions expose the metal layer 335 by removing all photoresist layers (not shown). Let's do it.

In order to form the first and second photoresist patterns 381 and 382 having different thicknesses at this time, the first and second embodiments of the present invention and modifications thereof are provided in regions corresponding to the portions ch on which channels are to be formed. By using the mask 390 (101 in FIG. 5, 102 in FIG. 6, 201 in FIG. 7, and 202 in FIG. 8) having a double slit structure according to the scanning direction corresponding to the entire portion in which the channel of the " Irrespective of this, the second photoresist pattern 382 having a relatively uniform thickness t12 is formed.

In the portion ch corresponding to the channel, since the amount of light exposed to the transmission area TA by the diffraction phenomenon of the light by the transflective area HTA having the double slit structure is small, the first photoresist pattern ( A second photoresist pattern 382 having a second thickness t12 that is thinner than the first thickness t11 of 381 is formed.

Next, as shown in FIG. 9C, the metal layer (335 in FIG. 9B) and the impurity amorphous silicon layer (330 in FIG. 9B) and the lower portion of the metal layer not covered with the photoresist pattern patterns 381 and 382 The pure amorphous silicon layer 325 of FIG. 9B is etched to connect the data line 340 of the triple layer structure, the source drain pattern 343 in a connected state, and the impurity amorphous silicon pattern under the source drain pattern 343. 333, and an active layer 327 of pure amorphous silicon is formed.

Next, as shown in FIG. 9D, the second photoresist pattern pattern 382 of FIG. 9C is removed. At this time, the removal of the second photoresist pattern pattern 382 of FIG. 9C may be performed by ashing, and in this case, the surface of the first photoresist pattern pattern 381 may also be removed together with the thickness thereof. Becomes thinner.

Next, as shown in FIG. 9E, source and drain electrodes 347 and 349 spaced apart from each other by removing the exposed source drain pattern 343 of FIG. 9D and an impurity amorphous silicon pattern 333 of FIG. 9D. An ohmic contact layer 334 of impurity amorphous silicon is formed to expose the active layer 327 and to be spaced apart from each other. Thereafter, the remaining first photoresist pattern pattern 381 of FIG. 9D is removed by performing a strip.

Next, as shown in FIG. 9F, an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiO ₂ ) is deposited or an organic insulating material such as benzocyclobutene (BCB) or photoacryl is coated. After the insulating material layer is formed, a protective layer 350 having a drain contact hole 360 exposing a part of the drain electrode 349 is formed by patterning by performing a third mask process.

Next, as shown in FIG. 9G, a pixel is formed by depositing a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) on the protective layer 350 and patterning the same using a fourth mask. An electrode 370 is formed. In this case, the pixel electrode 370 is connected to the drain electrode 349 through the drain contact hole 360.

In this way, the manufacturing process can be reduced by manufacturing the array substrate for the liquid crystal display using four masks, and in particular, a double slit structure for a portion of which the channel is "⊂" shaped and not perpendicular or parallel to the scanning direction. By performing diffraction exposure using a mask having a structure, the production yield can be improved by preventing short between the source and drain electrodes.

The present invention is not limited to the above embodiments, and various changes and modifications can be made without departing from the spirit of the present invention.

By using a mask having a double slit structure according to the present invention, by fabricating an array substrate for a liquid crystal display device with a channel structure having a "slit" shape, the thickness variation of the photoresist pattern generated during patterning of the channel region is overcome. There is an effect of improving productivity by preventing short between the source and drain electrodes.

Moreover, manufacturing cost can be reduced by manufacturing using four masks.

Claims (9)

Used in the manufacture of an array substrate for a liquid crystal display device having a channel structure in the form of " ⊂ ", a transmission region for completely transmitting light, a blocking region for completely blocking light, and a semi-transmissive region in which light transmission is smaller than the transmission region In the photo mask having a, A plurality of first bars formed in the shape of the channel region corresponding to the channel region of the “⊂” shape and blocking the transmission of light; and a plurality of first bars alternately formed with the plurality of first bars. And a transflective region having a first slit and a plurality of second slits formed in said first bar. The method of claim 1, The channel region of the " ⊂ " shape is formed such that all four bent portions form an obtuse angle larger than a right angle. The method of claim 2, In the second bar of the "⊂" type, all four portions have an obtuse angle, and when defined as the first to fifth unit bars as each unit element on the basis of the bent portion, the plurality of The second slit is formed in the first and fifth unit bars arranged in parallel with each other and the second and fourth unit bars respectively connected to the third unit bar in a vertical state. Photo mask characterized by. The method of claim 3, wherein The plurality of second slits are formed in the second or fourth unit bar, each parallel to the width direction of the second or fourth unit bar (bar), characterized in that the photo mask. The method of claim 3, wherein The plurality of second slits are formed in the second or fourth unit bar, characterized in that parallel to the longitudinal direction of the second or fourth unit bar (bar), respectively. The method according to any one of claims 1 to 5, The semi-transmissive region having a double slit structure corresponding to the channel region of the " ⊂ " form a blocking region corresponding to the portion where the data wiring, the source and the drain electrode are formed, and a transmissive region corresponding to the other region. Characteristic photo mask. The method according to any one of claims 1 to 5, The semi-transmissive region having a double slit structure corresponding to the channel region of the "V" type has a transmissive region corresponding to the portion where the data line, the source and the drain electrode are formed, and a blocking region corresponding to the other region. Characteristic photo mask. Forming a gate wiring and a gate electrode on the substrate; Sequentially forming a gate insulating layer, a pure amorphous silicon layer, an impurity amorphous silicon layer, and a metal material layer on the gate wiring and the gate electrode; Forming a photoresist layer over the metal material layer; Positioning the photomask according to any one of claims 1 to 5 over the photoresist layer, exposing and developing the portion of the channel to form a "⊂" shape corresponding to the semi-transmissive region of the mask A first photoresist pattern having a first thickness substantially uniform with respect to the first photoresist pattern is formed, and at the same time, a second photoresist pattern having a second thickness thicker than the first thickness is formed for the portion where the data line and the source and drain electrodes are to be formed. Making a step; Removing the metal material layer, the impurity amorphous silicon layer, and the pure amorphous silicon layer exposed to the outside of the first and second photoresist patterns; Removing the first photoresist pattern; The first photoresist pattern is removed to remove the exposed metal material layer and the impurity amorphous silicon layer thereunder, thereby forming data lines, source and drain electrodes spaced apart from each other, and ohmic contact layers of impurity amorphous silicon spaced apart from each other. Steps to Method of manufacturing an array substrate for a liquid crystal display device comprising a. The method of claim 8, After forming the data line, the source and drain electrodes and the ohmic contact layer, forming a protective layer having a drain contact hole exposing the drain electrode over the data line and the source and drain electrodes; Forming a pixel electrode contacting the drain electrode through the drain contact hole on the passivation layer; Method of manufacturing an array substrate for a liquid crystal display device further comprising.

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