CN109541829A - Mask, liquid crystal panel and liquid crystal display device - Google Patents
Mask, liquid crystal panel and liquid crystal display device Download PDFInfo
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- CN109541829A CN109541829A CN201811554081.4A CN201811554081A CN109541829A CN 109541829 A CN109541829 A CN 109541829A CN 201811554081 A CN201811554081 A CN 201811554081A CN 109541829 A CN109541829 A CN 109541829A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 35
- 230000005540 biological transmission Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 abstract description 25
- 230000008569 process Effects 0.000 abstract description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 239000003292 glue Substances 0.000 description 15
- 239000010409 thin film Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000012528 membrane Substances 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000002633 protecting effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000000116 mitigating effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 102100025490 Slit homolog 1 protein Human genes 0.000 description 1
- 101710123186 Slit homolog 1 protein Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000000003 hoof Anatomy 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a mask, a liquid crystal panel and a liquid crystal display device, wherein the mask comprises: a light-shielding region, a full light-transmitting region, and a semi-light-transmitting region; the full light-transmitting area is arranged adjacent to the light-shielding area; the semi-transparent area is arranged adjacent to the shading area, the semi-transparent area comprises a first area and a second area, the first area is also arranged adjacent to the full-transparent area, and the second area is enclosed between the first area and the shading area; the second area is provided with a light-transmitting slit, and the width of the light-transmitting slit is smaller than the exposure precision of the exposure machine. According to the mask plate, the light-transmitting slits are formed in the first area of the semi-light-transmitting area and the second area surrounded by the light-shielding area, so that the width of each light-transmitting slit is smaller than the exposure precision of the exposure machine, the light inlet quantity of the second area is increased under the condition that fine gaps are not exposed, the out-of-focus phenomenon during exposure of the second area can be reduced, and the process yield is improved.
Description
Technical field
The present invention relates to field of liquid crystal display, in particular to a kind of mask plate, liquid crystal display panel and liquid crystal display device.
Background technique
Here statement only provides background information related with the application, without inevitably constituting the prior art.Liquid crystal
Show that device occupies more and more important position in flat-panel screens.Have at present at Twisted Nematic (TN, twisted nematic)
Or four mask technology (4Mask) is used in the liquid crystal display panel production of Vertical Alignment (VA, vertical alignment) type,
Four mask refers to the light of photoetching and drain electrode and source electrode by non-metallic layer amorphous silicon in five photoetching (5Mask) and n+ amorphous silicon
Quarter merges, and Indium Tin Oxides (indium tin oxide) film production is placed on finally, being connect by beating on protective film
The method of contact hole, realization ito film are connected with source electrode.4Mask technique reduces a photoetching compared with original 5Mask technique
Technique substantially reduces the production time, improves production efficiency, reduces production cost, reduces equipment investment.
Wherein, every one of lithographic process in 4Mask technique, all can be through overexposure, development, etching, photoresist glue strip step.
In the actual production process, due to being all light tight region and semi-transparent diaphragm area around channel semi-permeable membrane circular arc sector, and straight line
Region is adjacent with transmission region, in this way because light has certain scattering process, in processing procedure, guarantees that linearity sector can complete half
When permeable membrane exposes, arcuate segments can have the defocus (out of focus) of certain probability, cause the arc-shaped channel of semi-permeable membrane can not be complete
Full exposure, so that photoresist glue leaves completely, can not carry out playing half protecting effect, and the source electrode and drain electrode of metal is caused to be connected
Together, Thin Film Transistor (TFT, thin film transistor (TFT)) loses on-off action.
Summary of the invention
The main object of the present invention is to propose a kind of mask plate, liquid crystal display panel and liquid crystal display device, can reduce channel
The problem out of focus occurred when place's exposure, and then lifting process yield.
To achieve the above object, mask plate proposed by the present invention, comprising:
Lightproof area；
Full transmission region, the neighbouring lightproof area are arranged；And
Semi-transparent region, the semi-transparent region include the firstth area and the secondth area, and firstth area is adjacent to the full impregnated light
Region setting, secondth area encloses between firstth area and the lightproof area；It is narrow that secondth area offers light transmission
Seam, the width of the transmissive slit are less than the exposure accuracy of exposure machine.
In the embodiment of the present invention, the secondth area of mask plate is surrounded by firstth area in semi-transparent region and lightproof area, due to
The scattering process of light, in processing procedure, so that the defocusing phenomenon of certain probability can occur in the secondth area, by opening up on the second region
Transmissive slit then will not expose the feelings for locating tiny gap so that the width of transmissive slit is less than the exposure accuracy of exposure machine
The light-inletting quantity for increasing by the secondth area under condition so, it is possible to mitigate the defocusing phenomenon when exposure of the secondth area, and source electrode and drain electrode is avoided to send out
Raw short circuit, lifting process yields.
Optionally, the lightproof area includes the second shading that the first shading region and part surround first shading region
Area, second shading region are set in distance with first shading region, and the semi-transparent region is set to second shading region
Between first shading region；
First shading region has the raised zones for stretching out the semi-transparent region, and the full transmission region is adjacent described convex
Region side is arranged out.
Optionally, secondth area is arc-shaped setting, and the both ends in secondth area are separately connected firstth area, institute
The firstth area is stated linearly to be arranged.
Optionally, the one end in the transmissive slit from secondth area extends to the other end, the extension of the transmissive slit
Path is corresponding with the arc-shaped in secondth area.
Optionally, the width of the transmissive slit is 0.1~0.2um.
Optionally, the transmissive slit is one, and the transmissive slit is located at the middle part in secondth area.
Optionally, the transmissive slit be it is a plurality of, a plurality of transmissive slit along secondth area width direction successively
Arrangement.
Optionally, the width of a plurality of transmissive slit is equal.
The present invention also proposes that a kind of liquid crystal display panel, including array substrate, the pattern of the array substrate are exposed by mask plate
It forms, wherein the mask plate includes: lightproof area；Full transmission region, the neighbouring lightproof area are arranged；And semi-opaque region
Domain, the semi-transparent region include the firstth area and the secondth area, and firstth area is arranged adjacent to the full transmission region, and described second
It encloses between firstth area and the lightproof area in area；Secondth area offers transmissive slit, the transmissive slit
Width is less than the exposure accuracy of exposure machine.
The present invention also proposes a kind of liquid crystal display device, which includes a kind of liquid crystal display panel, the liquid crystal surface
Plate includes array substrate, and the pattern of array substrate is exposed by a kind of mask plate, which includes: lightproof area；Full impregnated
Light region, the neighbouring lightproof area are arranged；And semi-transparent region, the semi-transparent region include the firstth area and the secondth area,
Firstth area is arranged adjacent to the full transmission region, secondth area enclose set on firstth area and the lightproof area it
Between；Secondth area offers transmissive slit, and the width of the transmissive slit is less than the exposure accuracy of exposure machine.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the structural schematic diagram of one embodiment of mask plate of the present invention；
Fig. 2 is the structural schematic diagram of another embodiment of mask plate of the present invention；
Fig. 3 is the exposure schematic illustration of mask plate of the present invention；
Fig. 4 is effect picture after the development of mask plate of the present invention；
Fig. 5 is the structural schematic diagram of one embodiment of liquid crystal display panel of the present invention；
Fig. 6 is the structural schematic diagram of one embodiment of liquid crystal display device of the present invention.
Drawing reference numeral explanation:
| Label | Title | Label | Title | Label | Title |
| 10 | Mask plate | 12 | Second shading region | 221 | Transmissive slit |
| 1 | Lightproof area | 2 | Full transmission region | 3 | Semi-transparent region |
| 11 | First shading region | 21 | Firstth area | 100 | Liquid crystal display panel |
| 111 | Raised zones | 22 | Secondth area | 200 | Liquid crystal display device |
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that if relating to directionality instruction (such as up, down, left, right, before and after ...) in the embodiment of the present invention,
Then directionality instruction be only used for explain under a certain particular pose (as shown in the picture) between each component relative positional relationship,
Motion conditions etc., if the particular pose changes, directionality instruction is also correspondingly changed correspondingly.
In addition, being somebody's turn to do " first ", " second " etc. if relating to the description of " first ", " second " etc. in the embodiment of the present invention
Description be used for description purposes only, be not understood to indicate or imply its relative importance or implicitly indicate indicated skill
The quantity of art feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy
Sign.In addition, the meaning of the "and/or" occurred in full text is, and including three schemes arranged side by side, by taking " A and/or B " as an example, including A
The scheme that scheme or B scheme or A and B meet simultaneously.In addition, the technical solution between each embodiment can be combined with each other,
It but must be based on can be realized by those of ordinary skill in the art, when conflicting or nothing occurs in the combination of technical solution
Method realize when will be understood that the combination of this technical solution is not present, also not the present invention claims protection scope within.
The present invention proposes a kind of mask plate.
In embodiments of the present invention, as shown in Figures 1 and 2, the mask plate 10, comprising:
Lightproof area 1；
Full transmission region 2, the neighbouring lightproof area 1 are arranged；And
Semi-transparent region 3, the neighbouring lightproof area 1, the semi-transparent region 3 include the first area 21 and the second area 22,
The also neighbouring full transmission region 2 in firstth area 21 is arranged, and secondth area 22 is enclosed set on firstth area 21 and the screening
Between light region 1；Secondth area 22 offers transmissive slit 221, and the width of the transmissive slit 221 is less than the exposure of exposure machine
Light precision.
Mask plate 10 provided by the invention is specifically as follows single slit mask version 10,10 (Half of intermediate tone mask version
Tone Mask) or gray level mask plate 10.The present embodiment is illustrated by taking intermediate tone mask version 10 as an example, and semi-transparent region 3 is half
Permeable membrane region, it makes use of the partial light permeabilities of grating, photoresist glue can not exclusively be exposed, and semi-transparent diaphragm area is by required blunt
Change layer difference in height come determine light penetrate number, general semi-permeable membrane light transmittance is between 30%~70%.One is asked below
And referring to Fig. 3 and Fig. 4, briefly introduce the process of the exposure and imaging in making technology, using patterning processes prepared grid and
After gate insulating layer, Amorphous silicon (A-Si is successively coated with directly on substrate；Amorphous silicon), (N-type is non-by N+A-Si
Crystal silicon), then Metal (metal layer) and photoresist glue are exposed, intermediate tone mask version with (intermediate tone mask version 10) light shield
There are full transmission region 2, semi-transparent region 3 and lightproof area 1 (light tight region) above 10 light shields, is covered in light across halftoning
It after 10 light shield of film version, has different light quantities and exposes on photoresist glue, different changes can occur for photoresist colloidality matter, so being shown
Movie queen, the complete 2 developed liquid of photoresist glue of transmission region fall, and 1 photoresist glue of lightproof area is all left, and the light in semi-transparent region 3
Resistance glue leaves a part of thickness.
It may include source electrode figure corresponding with the source electrode and drain electrode of thin film transistor (TFT) (TFT) and drain electrode in lightproof area 1
The figures such as figure, in addition, lightproof area 1 can also include various figures corresponding with other cablings of data line and edges of boards region
Shape.Full transmission region 2 corresponds to the figure other than source electrode, drain electrode, channel and the data line cabling of thin film transistor (TFT).Semi-transparent region
It may include channel figure corresponding with the channel of thin film transistor (TFT) in 3.Lightproof area 1, semi-transparent region 3, full transmission region 2
Range size and shape can according to the figure of different thin film transistor (TFT)s be adapted adjustment, do not do specific restriction herein.
The length and shape of transmissive slit 221 can without limitation, the width of transmissive slit 221 can be it is uniform,
Can be only needs its width or maximum width to be less than the exposure accuracy of exposure machine, transmissive slit 221 in gradually wide setting
Can be for one or a plurality of, the width and item number of specific transmissive slit 221 can be selected according to actual exposure demand.
I.e. when exposing semi-transparent region 3, transmissive slit 221 will not expose gap tiny out, while can improve semi-transparent region 3 again
Light-inletting quantity, solve since the second area 22 is between semi-transparent region 3 and lightproof area 1, the scattering process of light causes centainly
The defocusing phenomenon of probability.In another embodiment, row's transparent micropore is opened up in the second area 22, the diameter of transparent micropore is less than
The exposure accuracy of exposure machine.In this way, transparent micropore will not produce gap, it is equally capable of increasing the light-inletting quantity in the second area 22, is mitigated
The defocusing phenomenon in the second area 22.
In embodiments of the present invention, first area 21 in semi-transparent region 3 is adjacent with transmission region, then can guarantee the firstth area
21 complete semi-permeable membrane exposure, and since the second area 22 is surrounded by the first area 21 and lightproof area 1 completely, since the scattering of light is made
With, in processing procedure, so that the defocusing phenomenon of certain probability can occur in the second area 22, the second area 22 is caused not expose completely,
So that photoresist glue leaves completely, half protecting effect can not be carried out.By opening up transmissive slit 221 in the second area 22, so that
The width of transmissive slit 221 is less than the exposure accuracy of exposure machine, then increases by the in the case where that will not expose and locate tiny gap
The light-inletting quantity in two areas 22 so, it is possible to mitigate the defocusing phenomenon when exposure of the second area 22, avoid source electrode from occurring with drain electrode short
Road, thus lifting process yields.
In one embodiment, the lightproof area 1 includes that the first shading region 11 and part surround first shading region 11
The second shading region 12, second shading region 12 is set in distance with first shading region 11, and the semi-transparent region 3 is set
Between second shading region 12 and first shading region 11；First shading region 11, which has, stretches out the semi-opaque region
The raised zones 111 in domain 3, complete adjacent 111 side of the raised zones setting of transmission region 2.
In the present invention, the first shading region 11 may include the corresponding source electrode figure of source electrode of thin film transistor (TFT), and second hides
12 domain 1 of light area may include the corresponding drain patterns of drain electrode of thin film transistor (TFT), and channel figure is located at the second shading region 12 and
In the semi-transparent region 3 of one shading region 11.In this way, increasing light-inletting quantity by opening up transmissive slit 221 in the second area 22, subtracting
Defocusing phenomenon when light secondth area 22 exposes to avoid source electrode and drain electrode that short circuit occurs, and then improves the yields of product.
Optionally, secondth area 22 is arc-shaped setting, and the both ends in secondth area 22 are separately connected one described first
Area 21, the linearly setting of the firstth area 21.
In the present embodiment, in this way, making semi-transparent region 3 substantially in the shape of a hoof, the width in the first area 21 can be with circle
The width of arc is equal.In order to increase light-inletting quantity, guarantee thin film transistor (TFT) is corresponding arc-shaped consistent with the width of linear,
It can make arc-shaped width less times greater than the width of linear, so, it is possible to compensate certain light quantity, reduce dissipating due to light
The effect of penetrating causes the effect out of focus in the second area 22, to avoid source electrode and drain electrode that short circuit occurs, to improve the yields of product.
As a preferred scheme, the width in the first area 21 and the second area 22 is at 4 microns or less.I.e. provided in an embodiment of the present invention half
Tone mask plate 10, being preferably applied to manufacture channel width is 4 microns of thin film transistor (TFT)s below.
Optionally, the one end in the transmissive slit 221 from secondth area 22 extends to the other end, the transmissive slit
221 extension path is corresponding with the arc-shaped in secondth area 22.
In the present embodiment, by making the extension path of transmissive slit 221 corresponding with the arc-shaped in the second area 22, and
Completely through the both ends in the second area 22, then the length of transmissive slit 221 is made to reach maximization, the light-inletting quantity in the second area 22 is bigger
And it is more uniform, so that the effect for mitigating defocusing phenomenon is more preferable.In one embodiment, transmissive slit 221 extends in bending.Such as it is in
The shapes such as snakelike, corrugated extend, and so, it is possible the light-inletting quantity for further increasing the second area 22, are alleviated or avoided the to reach
The defocusing phenomenon in two areas 22.In a preferred embodiment, so that the width of transmissive slit 221 from the second area 22 close to the first area 21
One end along to being gradually increased at the highest point of circular arc.Due at the dome in the second area 22 apart from full transmission region 2 farthest, institute
It is bigger with the probability for generating defocusing phenomenon, it so, it is possible the concrete shape for more adapting to channel, more comprehensively mitigate out of focus existing
As.In another embodiment, the one end in transmissive slit 221 from secondth area 22 extends to the first area 21.In this way, making first
Area 21 also can guarantee sufficient light-inletting quantity far from the part of full transmission region 2, to avoid generating defocusing phenomenon.
Optionally, the width of the transmissive slit 221 is 0.1~0.2um.The exposure accuracy of general exposure machine is on the left side 2um
The right side in the case where that will not expose slit tiny out, increases the so that the width of transmissive slit 221 is 0.1~0.2um
The light-inletting quantity in two areas 22.
Optionally, the transmissive slit 221 is one, and the transmissive slit 221 is located at the middle part in secondth area 22.This
In embodiment, when transmissive slit 221 is one, it can be selected in the case where meeting precision of the width less than exposure machine maximized wide
Degree.So that transmissive slit 221 is located at the middle part in the second area 22, enable the light-inletting quantity supplemented by transmissive slit 221 more
It is evenly distributed in the second area 22, so that exposure homogeneity is good, so that mitigating the effect of the defocusing phenomenon in the second area 22
Fruit is more preferable.Only opening up a transmissive slit 221 makes the design of mask plate 10 simpler, so as to meet design requirement
Under conditions of effectively reduce processing cost.
Optionally, referring to figure 2., the transmissive slit 221 is a plurality of, and a plurality of transmissive slit 221 is along described second
The width direction in area 22 is arranged successively.In the present embodiment, transmissive slit 221 be a plurality of light-inletting quantity for making the second area 22 more
It is more, so as to more mitigate the problem out of focus when exposure, guarantee the entering light of the width direction at thin film transistor channel
Amount, to promote product yield.Width direction of a plurality of transmissive slit 221 along the second area 22 can also be in equidistant arrangement
It is to be gradually increased or reduced aligned transfer in spacing.In a preferred embodiment, transmissive slit is two.
Optionally, the width of a plurality of transmissive slit 221 is equal.By making the width of transmissive slit 221 equal, make
It is more uniform to obtain light-inletting quantity, while the designing and manufacturing technique of mask plate 10 can be simplified, reduces processing cost.
Optionally, a plurality of transmissive slit 221 equidistant arrangement in the width direction in the second area 22.In this way, in the second area 22
On transmissive slit 221 arrange uniformity, can not only guarantee that the light-inletting quantity in the second area 22 is more and homogeneity is good, make simultaneously
The design and manufacture for obtaining mask plate 10 are simpler.
The present invention also proposes a kind of liquid crystal display panel 100, as shown in figure 5, the liquid crystal display panel 100 includes array substrate, the battle array
The pattern of column substrate is exposed by above-mentioned mask plate 10, and the specific structure of the mask plate 10 is referring to above-described embodiment, due to this
Liquid crystal display panel 100 uses whole technical solutions of above-mentioned all embodiments, therefore at least with the technical side of above-described embodiment
All beneficial effects brought by case.
Below please with reference to Fig. 3 and Fig. 4, the manufacturing process of pattern in the array substrate of liquid crystal display panel 100 is briefly introduced.
After having prepared grid and gate insulating layer using patterning processes, Amorphous is directly successively coated in array substrate
Silicon (A-Si, amorphous silicon), N+A-Si (N-type amorphous silicon), Metal (metal layer) and photoresist glue, then use Half
Tone Mask (intermediate tone mask version 10) light shield is exposed, and has full transmission region 2, half above 10 light shield of intermediate tone mask version
Transmission region 3 and lightproof area 1 (light tight region) have different light quantities after light passes through 10 light shield of intermediate tone mask version
It exposing on photoresist glue, different changes can occur for photoresist colloidality matter, so after being developed, complete 2 photoresist glue quilt of transmission region
Developer solution falls, and shading region photoresist glue is all left, and the photoresist glue in semi-transparent region 3 leaves a part of thickness.
In embodiments of the present invention, first area 21 in the semi-transparent region 3 of mask plate 10 is adjacent with full transmission region 2, then
It can guarantee that the first area 21 completes semi-permeable membrane exposure, and since the second area 22 is surrounded by the first area 21 and lightproof area 1 completely,
Due to the scattering process of light, in processing procedure, so that the defocusing phenomenon of certain probability can occur in the second area 22, lead to the second area 22
It can not expose completely, so that photoresist glue leaves completely, half protecting effect can not be carried out.By opening up light transmission in the second area 22
Slit 221 then will not expose the tiny gap in place so that the width of transmissive slit 221 is less than the exposure accuracy of exposure machine
In the case of increase the light-inletting quantity in the second area 22, so, it is possible to mitigate the defocusing phenomenon when exposure of the second area 22, avoid source electrode with
Short circuit occurs for drain electrode, thus lifting process yields.
Liquid crystal display panel 100 of the present invention carries out the pattern in preparation array substrate by using above-mentioned mask plate 10, can subtract
It is light or avoid defocusing phenomenon at array substrate channel, so that it is short-circuit to avoid array substrate source electrode and drain electrode, and then improve
Product yield.
The present invention also proposes a kind of liquid crystal display device 200, as shown in fig. 6, the liquid crystal display device 200 includes liquid crystal surface
Plate 100, the liquid crystal display panel 100 include array substrate, and the pattern of the array substrate is exposed by above-mentioned mask plate 10, the exposure mask
The specific structure of version 10 is referring to above-described embodiment, since this liquid crystal display device 200 uses the whole of above-mentioned all embodiments
Technical solution, therefore at least all beneficial effects brought by the technical solution with above-described embodiment, liquid crystal display of the present invention
Device 200 carries out the pattern in preparation array substrate by using above-mentioned mask plate 10, can reduce or avoid array substrate
Defocusing phenomenon at channel so that it is short-circuit to avoid array substrate source electrode and drain electrode, and then improves product yield.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all at this
Under the inventive concept of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/use indirectly
It is included in other related technical areas in scope of patent protection of the invention.
Claims (10)
1. a kind of mask plate characterized by comprising
Lightproof area；
Full transmission region, the neighbouring lightproof area are arranged；And
Semi-transparent region, the neighbouring lightproof area are arranged, and the semi-transparent region includes the firstth area and the secondth area, and described first
Area is also arranged adjacent to the full transmission region, and secondth area encloses between firstth area and the lightproof area；It is described
Secondth area offers transmissive slit, and the width of the transmissive slit is less than the exposure accuracy of exposure machine.
2. mask plate as described in claim 1, which is characterized in that the lightproof area includes that the first shading region and part surround
Second shading region of first shading region, second shading region is set in distance with first shading region, described semi-transparent
Light region is set between second shading region and first shading region；
First shading region has the raised zones for stretching out the semi-transparent region, the adjacent protrusion area of full transmission region
The setting of domain side.
3. mask plate as claimed in claim 2, which is characterized in that secondth area is arc-shaped setting, secondth area
Both ends are separately connected firstth area, and firstth area is linearly arranged.
4. mask plate as claimed in claim 3, which is characterized in that the one end in the transmissive slit from secondth area extends to
The other end, the extension path of the transmissive slit are corresponding with the arc-shaped in secondth area.
5. mask plate as described in claim 1, which is characterized in that the width of the transmissive slit is 0.1~0.2um.
6. the mask plate as described in any one of claim 1 to 5, which is characterized in that the transmissive slit is one, described
Transmissive slit is located at the middle part in secondth area.
7. such as mask plate any described in claim 1 to 5, which is characterized in that the transmissive slit be it is a plurality of, it is a plurality of described in
Width direction of the transmissive slit along secondth area is arranged successively.
8. mask plate as claimed in claim 7, which is characterized in that the width of a plurality of transmissive slit is equal.
9. a kind of liquid crystal display panel, which is characterized in that including array substrate, which is characterized in that the pattern of the array substrate is by such as
Mask plate described in any one of claim 1 to 8 exposes.
10. a kind of liquid crystal display device, which is characterized in that including liquid crystal display panel as claimed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811554081.4A CN109541829B (en) | 2018-12-19 | 2018-12-19 | Mask, liquid crystal panel and liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811554081.4A CN109541829B (en) | 2018-12-19 | 2018-12-19 | Mask, liquid crystal panel and liquid crystal display device |
Publications (2)
| Publication Number | Publication Date |
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| CN109541829A true CN109541829A (en) | 2019-03-29 |
| CN109541829B CN109541829B (en) | 2021-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811554081.4A Active CN109541829B (en) | 2018-12-19 | 2018-12-19 | Mask, liquid crystal panel and liquid crystal display device |
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| CN113467179A (en) * | 2021-06-23 | 2021-10-01 | 惠科股份有限公司 | Mask, manufacturing method of array substrate and display panel |
| CN113703281A (en) * | 2021-07-30 | 2021-11-26 | 惠科股份有限公司 | Mask, manufacturing method of array substrate and array substrate |
| CN113759655A (en) * | 2021-08-19 | 2021-12-07 | 惠科股份有限公司 | Mask, manufacturing method of array substrate and display panel |
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| CN109541829B (en) | 2021-08-24 |
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