KR20070016999A - Developing treatment apparatus and developing treatment method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a developing apparatus and a developing processing method, wherein a substrate receiving unit for receiving substrates and a developing unit for developing substrates are arranged in a processing container in a processing container. The conveyance mechanism which conveys a board | substrate in the state which hold | maintained the outer side surface of a board | substrate from both sides between is provided. A developing solution supply nozzle for supplying a developer solution to the substrate and a gas injection nozzle for injecting gas to the substrate are provided above the conveyance path for transporting the substrate between the substrate receiving part and the developing processing part, and the developing part supplying the cleaning liquid to the substrate. The cleaning liquid supply nozzle is provided. According to this invention, since a board | substrate is conveyed in the state which hold | maintained the outer side surface of a board | substrate, a dirt does not spread and it provides the technique which can suppress generation | occurrence | production of the particle in a processing container.

Description

Developing apparatus and developing method {DEVELOPING TREATMENT APPARATUS AND DEVELOPING TREATMENT METHOD}

1 is an explanatory view of a longitudinal section showing an outline of a configuration of a developing apparatus according to the present embodiment.

It is explanatory drawing of the cross section which shows the outline of the structure of a image development processing apparatus.

It is a side view which shows the outline of the structure of a conveyance mechanism.

4 is a side view of the tip of the grip arm.

5 is a perspective view illustrating an outline of the configuration of the nozzle holding unit.

6 is a perspective view showing an outline of the configuration of the cleaning liquid supply nozzle.

It is explanatory drawing which shows the state which removes a washing | cleaning liquid from a wafer.

8 is an explanatory view of a longitudinal section showing an outline of the configuration of a developing apparatus when a cleaning supply nozzle is provided in a nozzle holding unit.

9 is a perspective view illustrating an outline of a configuration of a nozzle holding unit provided with a cleaning liquid supply nozzle.

It is explanatory drawing of the cross section which shows the outline of the structure of the image development processing apparatus when the air injection nozzle is provided in the both sides of a nozzle holding part.

11 is an explanatory diagram of a longitudinal section showing an outline of a configuration of a developing apparatus according to another embodiment.

It is explanatory drawing of the cross section which shows the outline of the structure of a image development processing apparatus.

13A is an explanatory diagram showing a state when a developer is supplied to a wafer; FIG. 13B is an explanatory diagram showing how the developer is supplied to the wafer, and FIG. 13C is an explanatory diagram showing the state after completion of supply of the developer to the wafer.

It is explanatory drawing of the longitudinal cross section which shows the outline of the structure of the image development processing apparatus when the washing | cleaning liquid supply nozzle is provided in a nozzle holding | maintenance part.

It is explanatory drawing of the longitudinal cross section which shows the structure of the image development processing apparatus when the washing | cleaning liquid supply nozzle is provided in the position adjacent to a mesh plate.

16A is an explanatory diagram showing a state when a developer is supplied to a wafer; 16B is an explanatory diagram showing a state when a cleaning liquid is supplied to a wafer; It is explanatory drawing which shows the state when a wafer has passed through the lower part of the washing | cleaning liquid supply nozzle.

It is explanatory drawing which shows the washing | cleaning liquid supply nozzle when the discharge direction is made inclined downward.

It is explanatory drawing of the cross section which shows the outline of the structure of the image development processing apparatus when the mesh plate conveyance mechanism is provided.

It is explanatory drawing of the longitudinal cross section which shows the outline of the structure of the image development processing apparatus in the case of providing the mesh plate conveyance mechanism.

20 is an explanatory diagram showing a state in which a developer is supplied to a wafer while the mesh plate and the wafer are moved.

It is explanatory drawing of the longitudinal cross section of the time dimension developing apparatus of the state which returns only a wafer to the receiver side.

The present invention relates to a developing apparatus for a substrate and a developing treatment method. For example, in the photolithography process in the manufacturing process of a semiconductor device, the developing process which develops the wafer exposed by the predetermined pattern, for example is performed. This developing process is usually performed by a developing apparatus, in which, for example, the wafer is rotated by a spin chuck to supply the developing solution from the developer supply nozzle onto the wafer to form a liquid film of the developing solution on the wafer surface. Doing

However, in the above-described developing apparatus, since it is necessary to rotate the wafer, it is necessary to use a high torque rotating motor for the spin chuck. For this reason, a large space for a motor is needed, and the developing processing apparatus was enlarged. In addition, power consumption for rotating the motor has increased, and running costs have also increased.

It is therefore possible to use a so-called spinless developing apparatus that does not rotate the wafer. It is currently proposed to develop a wafer by conveying the wafer by a rotor conveyance type conveyor using a plurality of rollers and passing the wafer under a developer supply nozzle (Japanese Patent Laid-Open No. 2001-87721).

However, in the case of the developing apparatus which conveys a wafer by rotor conveyance and develops a wafer, a roller contacts a wafer surface of the wafer which became dirty with a developing solution, for example. For this reason, the roller is dirty, and the dirt adheres to another part of the wafer or another wafer, and the dirt spreads to spread the source of particle generation. This generates a large amount of particles, for example, contaminates the wafer before development, leading to development defects.

As the developing apparatus, for example, a developer supply nozzle moves along the surface of the wafer while discharging the developer and supplies the developer to the entire surface of the wafer surface.

However, in this type of developing apparatus, for example, the developer flows on the wafer and tends to wave to supply the developer while the developer supply nozzle moves. For this reason, the developing solution on a wafer may become unstable and development may become unstable. In order to solve this problem, for example, it is proposed to feed a developer through a porous plate through a porous plate between a developer supply nozzle and a wafer to sandwich the developer between the porous plate and the wafer (Japanese Patent Laid-Open). 2005-51008).

However, this technique also causes "shear resistance" at the interface between the porous plate and the developer, for example, when the developer has a velocity component in a predetermined direction when the developer is supplied. This shear resistance causes the developer on the wafer to flow and convection occurs in the developer. In this way, if convection occurs in the developer, for example, the difference in concentration of the developer on the wafer may be uneven. In addition, residues in the developer may adhere to the pattern on the wafer surface, resulting in development defects in the portions.

This invention is made | formed in view of the said point, and makes it a 1st objective to suppress generation | occurrence | production of a particle in the image development apparatus of the system which does not rotate a board | substrate. In addition, the present invention provides a developer for supplying a developer to a substrate by relatively moving a developer supply nozzle and a substrate such as a wafer to suppress convection of the developer on the substrate to stabilize the phenomenon in the substrate surface, thereby improving the uniformity of development. It is a 2nd object.

The present invention for achieving the first object of the present invention is provided as a developing apparatus for a substrate, arranged in a processing container, in which a substrate receiving part for receiving substrates and a developing part for developing the substrate are arranged in a process container. In the processing container, a conveying mechanism for conveying a substrate is provided between the substrate receiving portion and the developing processing portion in a state where the outer surface of the substrate is held from both sides, and the conveying mechanism is provided between the substrate receiving portion and the developing processing portion. The developer supply nozzle for supplying the developer solution to the substrate and the gas injection nozzle for injecting gas to the substrate are provided above the conveyance path for conveying the substrate by means of the cleaning solution supply nozzle for supplying the cleaning liquid to the substrate. .

According to another aspect of the present invention, there is provided a developing apparatus for a substrate, which is arranged in a processing container with a substrate receiving part for receiving a substrate and an developing processing part for developing a substrate arranged inside the processing container. The conveyance mechanism which conveys a board | substrate in the state which hold | maintained the outer side surface of a board | substrate between the said board | substrate receiving part and the said image processing part from both sides is provided, Above the conveying path, a developing solution supply nozzle for supplying a developing solution to a substrate, a cleaning solution supply nozzle for supplying a cleaning solution to the substrate, and a gas injection nozzle for injecting gas into the substrate are provided.

According to another aspect, the present invention is a development method for developing a substrate using the above-described development apparatus, a step of holding the outer surface of the substrate of the substrate receiving section by the transfer mechanism, and a developing solution discharged from the developer supply nozzle. The process of conveying the board | substrate of a board | substrate delivery part to a development processing part by the said conveyance mechanism, and forming a liquid film of a developing solution on the said board | substrate, and the process of stopping development of a board | substrate in the said development processing part, and cleaning liquid discharged from a cleaning liquid supply nozzle A step of reciprocating the substrate between the developing portion and the substrate receiving portion by the transfer mechanism to form a liquid film of a cleaning liquid on the substrate, and transferring the substrate of the developing portion to the transfer mechanism in a state where gas is injected from the gas injection nozzle. Which conveys to the said board | substrate receiver part, and removes the washing liquid on a board | substrate by It has a constant.

According to this invention, since a board | substrate is conveyed in the state which hold | maintained the outer side surface of a board | substrate, the dirt does not spread as usual and generation | occurrence | production of the particle in a processing container can be suppressed. As a result, the development defect of the board | substrate processed by the image development processing apparatus can be reduced. Therefore, according to the present invention, a spinless developing device can be realized, and the development of the product can be improved by performing a proper development without developing defects, which can drastically reduce the size of the developing device.

The present invention for achieving the second object of the present invention is to develop a developer supply nozzle on the substrate by supplying the developer to the substrate by relatively horizontally moving the developer supply nozzle and the substrate in a discharged state from the developer supply nozzle A processing apparatus having a mesh plate interposed between a developer supply nozzle and a substrate and capable of passing a developer therethrough, the mesh plate being proximate to the substrate such that the mesh plate is in contact with the developer supplied on the substrate and at least of the mesh plate. The hydrophilization process is given to the surface of a board | substrate side.

According to the present invention, at least the surface on the substrate side of the mesh plate is hydrophilized, and while the developer supply nozzle and the substrate move relatively, the developer is supplied onto the substrate from the developer supply nozzle via the mesh plate, and the developer is fed to the mesh plate and the substrate. Even if it is interposed between, it can start between the developing solution on the board | substrate and a mesh board, and a shear resistance can be made small. As a result, the flow of the developer on the substrate is suppressed, so that the developer on the substrate is stabilized, and development in the substrate surface is appropriately performed without spots.

According to the present invention, since convection in the developer supplied to the substrate is suppressed and the developer on the substrate is stabilized, the substrate is not unevenly developed and developed uniformly, thereby improving the product ratio.

EMBODIMENT OF THE INVENTION Hereinafter, preferred embodiment of this invention is described. FIG. 1: is explanatory drawing of the longitudinal cross section which shows the outline of the structure of the image development processing apparatus 1 which concerns on this embodiment. 2 is an explanatory diagram of a cross section showing an outline of the configuration of the developing apparatus 1.

The development processing apparatus 1 is equipped with the processing container 10 which can be closed as shown, for example in FIG. The processing container 10 is formed in the substantially rectangular parallelepiped shape whose external shape is long in a X direction (left-right direction of FIG. 1). The processing container 10 is provided with the receiving portion 11 for carrying the wafer W between the outside and the developing portion 12 for developing the wafer W in the X direction. Moreover, the conveyance mechanism 13 which conveys the wafer W to the processing container 10 in the state which hold | maintained the outer surface of the wafer W in the sag of the water receiving part 11 and the image development processing part 12 as shown in FIG. ) Is installed.

As shown in FIG. 1, for example, the sidewall surface of the processing container 10 in the X-direction negative direction (left direction in FIG. 1) is used for carrying in and out of the wafer W between the outside of the processing container 10. The conveyance port 20 is formed. The shutter 21 is provided in the conveyance port 20, and the environment in the processing container 20 can be shut off from the outside.

The receiving portion 11 is provided with support pins 22 as a plurality of support members for horizontally supporting the wafer W. As shown in FIG. The support pin 22 can be lifted up and down by, for example, a lift driver 23 such as a cylinder, and can support the wafer W at a predetermined height.

As shown in FIG. 2, the first guide rails 31 extend in the X direction from the delivery section 11 to the development processing section 12 near both ends in the Y direction (up and down direction in FIG. 2) in the processing container 10. ) Are formed respectively. As shown in FIG. 1 and FIG. 3, the first slider 32 which is a guide part which moves on the rail 31 is provided on the 1st guide rail 31. As shown in FIG. The first slider 32 includes a drive source such as a motor and can move in the X direction along the first guide rail 31. A second guide rail 33 extending in the Y direction is formed on the first slider 32. The second guide rail 33 is provided with a second slider 34 as a moving member. The second slider 34 includes a drive source such as a motor and can move in the Y direction along the second guide rail 33.

A gripping arm 35 serving as a gripping member for gripping the outer surface of the wafer W is mounted on the second slider 34. The holding arm 35 is formed in a plate shape that is at least thicker than the thickness of the wafer W, and as shown in FIG. 2, has a substantially rectangular shape extending from the second slider 34 toward the center of the Y direction of the processing container 10. It is being formed.

As shown in FIG. 4, the tip end surface 35A which contacts the wafer W with the holding arm 35 is concavely curved inwardly when viewed from the side. Even when the tip surface 35A of the grip arm 35 and the outer surface of the wafer W are in contact with each other, the height of the wafer W and the grip arm 35 are slightly displaced. By recessing, the wafer W can be guided to the center of the thickness direction of the grip arm 35. In addition, the shape of the front end surface 35A may be recessed in a triangular shape inside when viewed from the side.

As shown in FIG. 2, the front end surface 35A of the holding arm 35 is formed in the curved shape according to the shape of the outer surface of the wafer W when viewed from a plane. The tip end surface 35A is formed so that a radius of curvature may become slightly larger than the wafer W. As shown in FIG. As a result, even when the gripping arm 35 and the wafer W are shifted in the X direction, the wafer W is moved to the center of the width direction (X direction) of the gripping arm 35 by the bending of the front end surface 35A. Can be induced.

As shown in FIG. 3, a spring 36 as a plurality of elastic bodies erected in the vertical direction is interposed between the second slider 34 and the grip arm 35. The spring 36 can absorb the shock when the holding arm 35 grips the wafer W. As shown in FIG.

On the second slider 34 on the rear side of the gripping arm 35, a plate-shaped fixing member 37 is erected in the vertical direction. The rear end face of the holding arm 35 and the fixing member 37 are connected by a spring 38 as an elastic body directed in the Y direction. By this spring 38, the contact pressure when the holding arm 35 grasps the wafer W can be maintained.

In this embodiment, the conveyance mechanism 13 includes the above-mentioned first guide rail 31; First slider 32; Second guide rail 33; A second slider 34; a grip arm 35; Springs 36; It is comprised by the fixing member 37 and the spring 38. As shown in FIG. The conveying mechanism 13 moves the holding arm 35 in the Y direction by the second slider 34 to hold the wafers W placed on the support pins 22 from both sides, and to hold the first arm W in the state. The gripping arm 35 can be moved in the X direction by the slider 32. Thereby, the wafer W can be conveyed in the horizontal direction between the delivery part 11 and the image development processing part 12 in the state which hold | maintained the outer surface of the wafer W. As shown in FIG. In addition, the operation | movement of the conveyance mechanism 13 is controlled by the control part C of the image development processing apparatus 1 shown in FIG.

As shown in FIG. 1, two nozzle holding portions 40, 41 are provided between the water receiving portion 11 and the developing treatment portion 12 in the processing container 10. The nozzle holding portions 40 and 41 are disposed so as to face each other above and below the ceiling surface and the bottom surface of the processing container 10. The nozzle holding parts 40 and 41 are arrange | positioned so that the conveyance path of the wafer W by the said conveyance mechanism 13 may be interposed.

For example, as shown in FIG. 5, the nozzle holding parts 40 and 41 are formed in the substantially rectangular parallelepiped shape which is longer than the diameter of the wafer W toward a Y direction. As shown in FIG. 2, the nozzle holding portions 40, 41 are formed between two first guide rails 31 on both sides in the Y direction of the processing container 10 when viewed from a plane, and the nozzle holding portions 40, 41. ), The environment of the delivery part 11 and the image development part 12 is isolate | separated substantially.

For example, the nozzle holding part 40 is attached to the ceiling surface of the processing container 10 as shown in FIG. The wafer end face of the nozzle holding part 40 is formed horizontally, and the developing solution supply nozzle 50, the gas injection nozzle, and the air injection nozzle 51 as an air supply part are arrange | positioned in the X direction. For example, the developing solution supply nozzle 50 is arranged at the developing processing unit 12 side, and the air spray nozzle 51 is arranged at the receiving unit 11 side.

As shown in FIG. 5, the developing solution supply nozzle 50 is formed over the both ends of the nozzle holding part 40 in the longitudinal direction (Y direction). The developing solution supply nozzle 50 is formed with a plurality of discharge holes 50a of round holes arranged in a line along the long direction.

For example, as shown in FIG. 1, the developing solution supply pipe 61 which communicates with the developing solution supply source 60 is connected to the nozzle holding | maintenance part 40. FIG. A flow path for sending a developer is formed inside the nozzle holding portion 40, and the developer supplied into the nozzle holding portion 40 through the developer supply pipe 61 can be discharged from the discharge port 50a of the developer supply nozzle 50. have. The developer can be supplied to the surface of the wafer W by discharging the developer from the developer supply nozzle 50 to the wafer W while passing the lower portion of the nozzle holding portion 40 in the X direction.

As shown in FIG. 5, the air injection nozzle 51 is formed over the both ends of the nozzle holding part 40 in the longitudinal direction. The air injection nozzle 51 is formed with the slit-shaped injection port 51a along a long direction. For example, as shown in FIG. 1, the air supply pipe 63 which communicates with the air supply source 62 is connected to the nozzle holding | maintenance part 40. FIG. For example, a ventilation path through which air passes is formed in the nozzle holding portion 40. Air supplied to the nozzle holding portion 40 through the air supply pipe 63 is injected from the injection port 51a of the air injection nozzle 51 through the nozzle holding portion 40. By spraying air from the air jet nozzle 51 against the wafer W passing through the lower part of the nozzle holding portion 40 in the X direction, an air knife is formed, the liquid on the wafer W is removed, and the wafer W is dried. I can do it. In addition, for example, the air supply source 62 is provided with the adjustment mechanism which adjusts the supply amount of air, for example, can control the blowing amount of the air from the air injection nozzle 51 arbitrarily by control of the control part C. As shown in FIG.

The nozzle holding part 41 is attached to the bottom face of the processing container 10. The upper end surface of the nozzle holding part 41 is formed horizontally, and the air injection nozzle 70 is provided in the end surface. The air injection nozzle 70 is disposed so as to face the air injection nozzle 51 of the nozzle holding portion 40. The air injection nozzle 70 has the same configuration as the air injection nozzle 51 and can inject air supplied from the air supply source 71 through the air supply pipe 72 from the injection port of the air injection nozzle 70. By spraying air from the air jet nozzle 70 onto the wafer W passing through the nozzle holding portion 41, an "air knife" can be formed to remove the liquid on the wafer surface of the wafer W. As shown in FIG. In addition, by spraying air from the top and bottom with respect to the wafer W, the pressure on the upper and lower surfaces of the wafer W can be maintained to the same degree. As a result, even when high pressure air is sprayed on the upper surface of the wafer W from above to remove the liquid on the upper surface of the wafer W, the wafer W can be prevented from falling off from the holding arm 35. have.

The cleaning solution supply nozzle 80 is disposed in the development processing unit 12. The cleaning liquid supply nozzle 80 is formed in a substantially U shape having an opening in the X-direction portion direction side. That is, the cleaning liquid supply nozzle 80 is located above the wafer W, as shown in FIGS. 1 and 6, and is located at the bottom of the wafer W and the elongated upper nozzle 80a along the X direction. It is comprised by the elongate lower nozzle 80b and the vertical connection part 80c which is located in the side of the wafer W in the positive direction side of the X direction, and connects the edge part of the upper nozzle 80a, and the edge part of the lower nozzle 80b.

The upper nozzle 80a is formed longer than the diameter of the wafer W, for example, as shown in FIG. On the wafer surface of the upper nozzle 80a, as shown in Fig. 6, a plurality of discharge ports 80d are formed in a line along the long direction. The lower nozzle 80b is disposed opposite to the upper nozzle 80a. The lower nozzle 80b is formed longer than the diameter of the wafer W in the same manner as the upper nozzle 80a, and a plurality of discharge ports 80d are formed on the upper surface thereof. As shown in FIG. 1, the washing | cleaning liquid supply pipe 82 which connects with the washing | cleaning liquid supply source 81 is connected to the washing | cleaning liquid supply nozzle 80. As shown in FIG. A cleaning liquid flow path (not shown) is formed inside the cleaning liquid supply nozzle 80, and the cleaning liquid supplied to the cleaning liquid supply nozzle 80 through the cleaning liquid supply pipe 81 is discharged from the upper nozzle 80a and the lower nozzle 80b. It is discharged from 80d.

The rail 90 extending in a Y direction is formed in the side wall surface of the processing container 10 in the positive direction side of the X direction as shown in FIG. As for the cleaning liquid supply nozzle 80, the vertical connection part 80c is hold | maintained by the nozzle arm 91, for example. The nozzle arm 91 can move on the rail 90 in the Y direction by a drive source 92 such as a motor. The cleaning liquid supply nozzle 80 moves the cleaning liquid from the one end to the other end of the discharge wafer W in the Y direction from the upper and lower discharge ports 80d with the wafer W therebetween, so that the upper surface of the wafer W And a cleaning liquid can be supplied to the wafer surface.

In the lower part of the developing part 12, the receiving container 100 which receives and collect | recovers the liquid falling from the washing | cleaning liquid supply nozzle 80 and the wafer W is provided. As shown in FIG. 1, a drain pipe 101 connected to the outside of the processing container 10 is connected to the receiving container 100.

The supply port 110 which supplies clean air is formed in the side wall surface of the processing container 10 on the negative direction side of the X direction. For example, the air supply pipe 112 connected to the air supply source 111 is connected to the supply port 110. The exhaust port 113 is formed in the bottom surface of the process container 10 near the edge part in the positive direction side of the X direction. The exhaust port 113 is connected to the negative pressure generating device 115 by, for example, an exhaust pipe 114. The negative pressure generating device 115 can exhaust the environment in the processing container 10 from the exhaust port 113. By supplying clean air from the supply port 110 and evacuating it from the exhaust port 113, an air flow flowing from the water receiver 11 to the development processing unit 12 in the processing container 10 can be formed.

Further, as described above, the supply of the start stop supply port 110 at the time of discharging or ejecting the drive nozzles 50, 51, 80, 70 of the cleaning liquid supply nozzle 80 described above; The starting stop of the exhaust of the exhaust port 113 and the like are controlled by the control unit C. FIG.

Next, the developing process performed by the developing apparatus 1 comprised as mentioned above is demonstrated.

For example, at the time of the developing process, supply from the supply port 110 and exhaust from the exhaust port 113 are performed, and clean airflow flowing from the water supply section 11 toward the developing processing section 12 is carried out in the processing container 10. Is formed. For example, air is injected from the air injection nozzle 51 and an air curtain is formed between the nozzle holding portions 40 and 41.

Then, the wafer W is first carried in the water receiving part 11 from the transport port 20 by an external transport arm and supported by the support pin 22 as shown in FIG. 1. When the wafer W is supported by the support pin 22, the grip arms 35 waiting on both sides in the Y direction move to the wafer W side and the wafers W are held by the grip arms 35 as shown in FIG. 2. The outer side surfaces of both sides in the Y-direction of) are gripped. Next, the wafer W is horizontally moved in the positive direction in the X direction on the developing processing unit 12 side by the holding arm 35. Immediately before the wafer W passes between the nozzle holding portions 40, 41, the developer is discharged from the developer supply nozzle 50, and the wafer W passes through the lower side where the developer is being discharged. That is, the developer is discharged from the developer solution supply nozzle 50 is moved relative to the wafer W from one end to the other end of the wafer (W). As a result, a liquid film of a developing solution is formed on the surface of the wafer (W). The development of the wafer W is started by supply of this developer.

The wafer W is moved to the center of the developing part 12 and stopped, for example. Then, the wafer W is stopped for a predetermined time while being held by the grip arm 35. After a predetermined time elapses, the cleaning liquid supply nozzle 80 moves from one end side of the wafer W to the other end side in the Y direction while producing the cleaning liquid. For example, the cleaning liquid supply nozzle 80 reciprocates between the both ends of the wafer W several times. As a result, the developing solution on the surface of the wafer W is replaced with the cleaning solution to form a liquid film (liquid activation) of the cleaning solution on the wafer W. The development of the wafer W is stopped by the supply of the cleaning liquid.

After the liquid activation of the cleaning liquid is formed on the surface of the wafer W, the wafer W is moved in the X-direction portion direction on the receiving part 11 side by the holding arm 35. Just before the wafer W passes between the nozzle holding portions 40, 41, air is ejected from the lower air spray nozzle 70. Moreover, the injection flow volume of the air from the upper air injection nozzle 51 raises. The wafer W passes through the position where air is injected from above and below, and the liquid activation of the cleaning liquid on the surface of the wafer W and the liquid attached to the back surface of the wafer W are removed.

At this time, as shown in FIG. 7, the air of the air injection nozzle 51 turns into an air knife, and the cleaning liquid R on the surface of the wafer W is directed from one end of the wafer W to the other end by the air pressure. Removed once and dried. In addition, if the air injection nozzle 51 is arranged so that air may be blown toward the developing part 12 side at least, it is possible to prevent mist from scattering in the water receiving part 11. The same applies to the air injection nozzle 70.

The wafer W stops when moved to the upper side of the support pin 22 in the receiver 11 and is received by the grip arm 35 from the support pin 22 and supported on the support pin 22. Then, the wafer W is carried out from the conveyance port 20 by an external conveyance arm, and a series of image development processes are complete | finished. In addition, this series of development processes, for example, is performed by the control unit C to stop the start or stop of the discharge or injection of the driving mechanism of the conveyance mechanism 13 and the cleaning liquid supply nozzle 80, or to supply the exhaust port 113 or exhaust port 113. This is achieved by controlling the start stop of the exhaust of the exhaust gas, and the like.

According to the above embodiment, since the conveyance mechanism 13 was provided in the processing container 10, the outer surface of the wafer W was gripped by the holding arm 35, and between the receiving part 11 and the image development part 12 was carried out. Can be returned. For this reason, the contamination by the process liquid does not diffuse as usual, and generation | occurrence | production of the particle in the process container 10 can be suppressed.

Moreover, since the cleaning liquid supply nozzle 80 which is movable to the Y direction was provided in the image development processing part 12 of the processing container 10, the cleaning liquid is discharged and the cleaning liquid supply nozzle 80 is moved from one end of the wafer W to the outer end. By replacing the developer on the wafer W with the cleaning solution, the liquid activation of the cleaning solution can be formed on the wafer W.

Since the cleaning liquid supply nozzle 80 is formed in a substantially U-shape so that the cleaning liquid can be supplied to the front and rear surfaces of the wafer W, the back surface side of the wafer W can also be cleaned.

Since the air spray nozzle 51 is provided between the delivery part 11 and the developing processing part 12, when the wafer W moves from the developing part 12 to the delivery part 11, the cleaning liquid on the wafer W is removed. It can be dried. Thereby, the liquid adhering to the wafer W on the developing part 12 side does not invade the sorghum part 11, and the sorghum part 11 can be kept clean. As a result, the particle | grains do not adhere to the wafer W carried in the receiving part 11, for example, and the wafer W is developed suitably.

An air curtain is formed between the water receiving part 11 and the developing processing part 12 by the air injection nozzle 51. As a result, the mist floating in the developing part 12 can be prevented from entering the water receiving part 11.

Since the air spray nozzle 70 is provided also below the processing container 10, the liquid adhering to the back surface of the wafer W can also be removed.

The airflow which flows from the water-receiving part 11 side to the developing-processing part 12 side in the processing container 10 by providing the supply mechanism 110 in the water-receiving part 11 side, and forming the exhaust port 113 in the developing-processing part 12 side. Therefore, it is possible to prevent dirts such as mist on the developing part 12 side from entering the water-receiving part 11 side. As a result, the wafer W carried in the delivery part 11 is not contaminated, and image development is performed suitably.

Since the spring 36 is provided between the holding arm 35 of the conveyance mechanism 13 and the 2nd slider 34, the shock when the holding arm 35 contacts the outer surface of the wafer W is buffered. can do. In addition, even a slight difference in position of the wafer W on the support pin 22 can be flexibly responded.

When the holding arm 35 grips the wafer W because the holding member 37 is installed behind the holding arm 35 and the holding member 37 and the holding arm 35 are connected by a spring 38. The contact pressure of can be kept constant.

Since the tip end face 35a of the grip arm 35 is bent inwardly when viewed from the side, the grip arm 35 and the wafer (even when the heights of the grip arm 35 and the wafer W are slightly displaced). The wafer W can be guided so that the center of the thickness direction of W) coincides. As a result, it is possible to prevent the wafer W from falling from the holding arm 35 during transportation.

In addition, liquid activation of the cleaning liquid is formed on the surface of the wafer W, and the liquid activation of the cleaning liquid is removed from one end of the wafer W toward the other end by an air knife. Removed. As a result, the residue does not adhere to the wafer W, and development defects caused by this adhesion can be prevented.

Although the cleaning liquid supply nozzle 80 was arrange | positioned in the image development processing part 12 in the above embodiment, although it may be provided between the water receiving part 11 and the image development processing part 12, as shown in FIG. 8, the nozzle holding | maintenance part ( The cleaning liquid supply nozzle 120 is provided between the developer supply nozzle 50 and the air jet nozzle 51 of 40. For example, as shown in FIG. 9, the cleaning liquid supply nozzle 120 is formed over both ends of the nozzle holding portion 40 in the long direction (Y direction) as in the developing solution supply nozzle 50. In the cleaning liquid supply nozzle 120, a plurality of discharge holes 120a of round holes are formed in a line along the long direction. For example, as shown in FIG. 8, the nozzle holding | maintenance part 40 is connected with the washing | cleaning liquid supply pipe 122 which communicates with the washing | cleaning liquid supply source 121. As shown in FIG. The cleaning liquid supply nozzle 120 may discharge the cleaning liquid supplied from the cleaning liquid supply source 121 through the cleaning liquid supply pipe 122 downward from the discharge port 120a.

Moreover, the washing | cleaning liquid supply nozzle 130 is similarly provided also in the lower nozzle holding part 41. FIG. The cleaning liquid supply nozzle 130 is disposed to face the cleaning liquid supply nozzle 120. The cleaning liquid supply nozzle 130 has the same configuration as the cleaning liquid supply nozzle 120 and can discharge the cleaning liquid supplied from the cleaning liquid supply source 131 through the cleaning liquid supply pipe 132 upward from the discharge port.

Then, when the wafer W having stopped for a predetermined time is moved in the X-direction portion direction on the side of the receiver 11, and the wafer W passes between the nozzle holding portions 40, 41, the cleaning liquid supply nozzle ( The cleaning liquid is discharged from the 120 and the cleaning liquid supply nozzle 130. At this time, the jet of air from the air injection nozzles 51 and 70 is stopped. For example, after the wafer W completes the passage between the nozzle holding portions 40 and 41 on the negative direction in the X direction, the wafer W moves in the positive direction in the X direction on the developing portion 12 side. It passes again between the cleaning liquid supply nozzle 120 and the cleaning liquid supply nozzle 130 which discharge the cleaning liquid. This round trip may be performed several times. In this way, liquid activation of the cleaning liquid is formed on the surface side of the wafer W. FIG. In addition, the dirt on the back surface side of the wafer W is removed. And the wafer W which finally reached the developing part 12 side moves to the direction of the X direction part at the side of the receiving part 11 side. At this time, discharge of the cleaning liquids of the cleaning liquid supply nozzles 120 and 130 is stopped, and air is ejected from the air injection nozzles 51 and 70 instead, and an air knife is formed. In this way, the cleaning liquids on the front and rear surfaces of the wafer W are removed and dried in the same manner as in the above embodiment.

Also in the above example, since the development process of the wafer W can be performed by holding the outer surface of the wafer W by the holding arm 35, the particle | grains in the processing container 10 generate | occur | produce compared with the conventional rotor conveyance. Can be suppressed. In addition, since the supply system of the developer cleaning liquid and the air is connected to the nozzle holding portions 40 and 41 and does not move, the piping configuration of the supply system can be simplified.

Although the cleaning liquid supply nozzles 120 and 130 are arrange | positioned above and below the conveyance path | route of the wafer W in the said example, only the cleaning liquid supply nozzle 120 of the upper side may be sufficient. Moreover, only the upper air spray nozzle 51 may be sufficient also for the air spray nozzles 51 and 70. FIG.

In the above embodiment, although the air curtain was formed between the water receiving part 11 and the image development processing part 12 using the air injection nozzle 51, you may provide the air supply part for forming an air curtain separately.

Moreover, as shown in FIG. 10, you may arrange | position the air injection nozzle 140 also on the upper side of the 1st guide rail 31 of the both sides of the nozzle holding part 40 in the longitudinal direction. By doing in this way, an air curtain can be formed over the both side wall surfaces of the processing container 10 in the Y direction, and it can reliably prevent the environment which became dirty with the mist of the developing part 12 from flowing into the water-receiving part 11. In addition, you may extend the nozzle holding | maintenance part 40 to the rail 30 at this time, and may form the air spray nozzle 51 provided in the nozzle holding part 40 over the both side wall surfaces of the processing container 10 in the Y direction.

As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, this invention is not limited to the example which concerns. Those skilled in the art will clearly understand that various modifications or modifications can be made within the scope of the idea described in the claims, and it is understood that they belong naturally to the technical scope of the present invention.

For example, in the above embodiment, the developer supply nozzle 50; Air spray nozzles 51; Cleaning liquid supply nozzles (80, 120, 130); Although the air injection nozzle 70 was each equipped with the discharge hole or injection port of round hole or slit shape, each nozzle may be provided with the discharge hole or injection port of any shape.

Next, another embodiment will be described. 11 is an explanatory view of a longitudinal section showing an outline of a configuration of a developing apparatus according to another embodiment; It is explanatory drawing of the cross section which shows the outline of the structure of a image development processing apparatus. The configuration of the developing apparatus 1 according to this embodiment is shown in FIG. 1, the main configuration is the same, and the members and the like indicated by the same reference numerals are the same as the developing apparatus 1 of FIG. 1. to be.

And in this embodiment, the mesh plate 75 which a liquid can pass through is provided, for example on the developing part 12 side. As shown in FIG. 12, the mesh plate 75 is formed in an all-side shape having, for example, one side larger than the diameter of the wafer W, and may cover the entire surface of the upper surface of the wafer W. As shown in FIG. The mesh plate 75 has a thickness of, for example, about 0.1 to 3.0 mm, and has a mesh of, for example, about 100 to 300 mesh (number of meshes per inch). As the material of the mesh plate 75, for example, polyacetylate or polyamide-based synthetic resin is used. The mesh plate 75 is hydrophilized, and the contact angle with the developing solution is set to 10 degrees or less. In addition, this hydrophilization treatment may be performed by infiltrating a hydrophilizing agent into the material of the mesh plate 75, or may be performed by plasma-processing the mesh plate 75 after that and oxidizing it. Moreover, as for the contact angle of the mesh plate 75, it is more preferable that it is between 5 degrees from the measurement limit near 0 degrees.

As shown in Fig. 11, the mesh plate 75 has one end portion at the side of the delivery section 11 positioned below the discharge port 50a of the developer supply nozzle 50, and is positioned from the bottom of the discharge port 50a. It is formed in the horizontal direction toward the side. In addition, the mesh plate 75 is provided at a position slightly higher than, for example, about 0.5 to 3.0 mm from the transfer path of the wafer W by the substrate transfer mechanism 13. As a result, when the wafer W moves from the receiving part 11 side toward the developing part 12 side and passes through the lower part of the developer supply nozzle 50, between the developer supply nozzle 50 and the wafer W, The mesh plate 75 is interposed, and the wafer W moves the lower surface side of the mesh plate 75 close to the mesh plate 75. The developer discharged from the developer supply nozzle 50 is supplied to the upper surface of the wafer W via the mesh plate 75 and sandwiched between the wafer W and the mesh plate 75.

The cleaning solution supply nozzle 80 is disposed in the development processing unit 12. The cleaning liquid supply nozzle 80 is formed in a substantially U shape having an opening in the X-direction portion direction side. That is, the cleaning liquid supply nozzle 80 is located above the wafer W and the mesh plate 75 as shown in FIG. 11 and has an elongated upper nozzle 80a and the wafer W and the mesh plate 75 along the X direction. A vertical connection portion positioned under the side of the lower nozzle 80b along the X direction and on the side of the wafer W in the forward direction of the X direction and connecting the end of the upper nozzle 80a and the end of the lower nozzle 80b ( 80c). The cleaning liquid is supplied to the upper surface of the wafer W via the mesh plate 75.

Next, the developing process performed by the developing apparatus 1 comprised as mentioned above is demonstrated.

For example, at the time of developing, clean air flow flowing from the water supply unit 11 to the developing processing unit 12 is discharged from the supply mechanism 110 and exhausted from the exhaust port 113. Is formed. For example, air is ejected from the air injection nozzle 51 and an air curtain is formed between the nozzle holding portions 40 and 41.

And the wafer W is first carried in from the conveyance port 20 into the receiving part 11 by the external conveyance arm, and is supported by the support pin 22 as shown in FIG. When the wafer W is supported by the support pin 22, the grip arms 35 waiting on both sides in the Y-direction move to the wafer W side and the wafers are held by the grip arms 35 as shown in FIG. The outer side surfaces of both sides in the Y-direction of W) are gripped. Next, the wafer W is horizontally moved in the positive direction in the X direction on the developing processing unit 12 side by the holding arm 35. Immediately before the wafer W passes between the nozzle holding portions 40, 41, the developer starts to be discharged from the developer supply nozzle 50, and the wafer W passes through the lower side where the developer is being discharged.

At this time, the developer discharged from the developer supply nozzle 50 passes through the mesh plate 75 and is supplied to the surface of the wafer W as shown in FIG. 13A. As shown in FIG. 13B, the developing solution K supplied on the wafer W is sandwiched between the wafer W and the mesh plate 75, and the lower surface of the mesh plate 75 in a state where the wafer W is burned. Along the X direction. Since the mesh plate 75 has hydrophilicity, the shear resistance between the developer K and the mesh plate 75 is small at this time, and the developer K is suppressed from flowing on the wafer W. As shown in FIG. 13C, when the wafer W passes through the lower side of the developer supply nozzle 50, the wafer W is stopped. At this time, the developing solution K is applied to the entire surface of the surface of the wafer W so that the developing solution K is filled between the wafer W and the mesh plate 75. The developing solution K is pressed between the mesh plate 75 and the wafer W, and a liquid film having a thickness of the developing solution K is formed on the surface of the wafer W so that the wafer W is developed.

The wafer W is stopped for a predetermined time while held by the holding arm 35. When a predetermined time elapses, the cleaning liquid supply nozzle 80 moves from one end side of the wafer W to the outer end side in the Y direction while producing the cleaning liquid. For example, the cleaning liquid supply nozzle 80 reciprocates between the both ends of the wafer W several times. The cleaning liquid is supplied to the surface side of the wafer W from the upper nozzle 80a of the cleaning liquid supply nozzle 80 via the mesh plate 75. As a result, the developer on the surface of the wafer W is replaced with the cleaning liquid, and a liquid film (liquid activation) of the cleaning liquid is formed on the wafer W. The development of the wafer W is stopped by the supply of the cleaning liquid.

After the liquid activation of the cleaning liquid is formed on the surface of the wafer W, the wafer W is then moved in the X-direction portion direction on the receiving part 11 side by the holding arm 35. Just before the wafer W passes between the nozzle holding portions 40, 41, air is ejected from the lower air spray nozzle 70. Moreover, the blowing flow volume of the air from the upper air injection nozzle 51 raises. The wafer W passes through the position where air is injected from above and below, and the liquid activation of the cleaning liquid on the surface of the wafer W and the liquid attached to the back surface of the wafer W are removed. At this time, as shown in FIG. 7 above, the air of the air jet nozzle 51 becomes an air knife, and the cleaning liquid R on the surface of the wafer W is moved from one end of the wafer W to the other end by the air pressure. It is removed at once and dried.

The wafer W stops when moved to the upper side of the support pin 22 in the receiver 11 and is received by the holding arm 35 from the grip arm 35. Then, the wafer W is carried out from the conveyance port 20 by an external conveyance arm, and a series of image development processes are complete | finished. In the above-described series of development processes, for example, the control unit C supplies or discharges the starting stop supply port 110 for discharging or ejecting each nozzle driven by the substrate transfer mechanism 13 or the cleaning liquid supply nozzle 80. This is realized by controlling the start stop of the exhaust of 113 and the like.

According to the above embodiment, since the mesh plate 75 in which the hydrophilization process was performed was provided in the lower part of the developing solution supply nozzle 50, the wetness with respect to the developing solution of the mesh plate 75 is good. Therefore, even if the developer is supplied between the mesh plate 75 and the wafer W while the wafer W moves under the mesh plate 75, the shear resistance between the developer on the wafer W and the mesh plate 75 is reduced. This flow of the developer on the wafer W is suppressed. As a result, the developing solution on the wafer W is stabilized, and the development in the wafer surface is stabilized and is performed without spots.

Since the mesh plate 75 is formed from the lower side of the developer supply nozzle 50 toward the advancing direction side of the wafer W, the supplied developer on the wafer W is disposed between the wafer W and the mesh plate 75. Is not seen. This also suppresses the flow of the developing solution and stabilizes the development of the wafer W.

Since the cleaning liquid can be supplied onto the wafer W via the mesh plate 75 by the cleaning liquid supply nozzle 80, the liquid of the cleaning liquid as much as the gap between the mesh plate 75 and the wafer W on the wafer W. Activation can be formed. For this reason, it is possible to supply a sufficient amount of the cleaning liquid onto the wafer W to prevent the residue of the phenomenon remaining on the wafer W from adhering to the pattern. And the cleaning liquid on the wafer W can be removed with the air knife of the air injection nozzle 51 in the state which injected the residue into the cleaning liquid.

Moreover, since the wafer W can be conveyed by the holding arm 35 of the board | substrate conveyance mechanism 13, the outer surface of the wafer W is hold | maintained, and the conveyance member contacts the back surface of the wafer W, There is no case and the back surface of the wafer W is not contaminated.

Since the air spray nozzle 51 is provided between the delivery part 11 and the developing processing part 12, when the wafer W moves from the developing part 12 to the delivery part 11, the cleaning liquid on the wafer W is removed. It can be dried. Thereby, the liquid adhering to the wafer W on the developing part 12 side does not invade the sorghum part 11, and the sorghum part 11 can be kept clean. As a result, for example, impurities are not adhered to the wafer W carried in the delivery section 11, and the wafer W is properly developed.

In the above-mentioned embodiment, although the washing | cleaning liquid supply nozzle 80 was arrange | positioned at the image development process part 12, you may be provided between the water receiving part 11 and the image development process part 12. FIG. 14, the cleaning liquid supply nozzle 120 is provided between the developing solution supply nozzle 50 of the nozzle holding | maintenance part 40 and the air injection nozzle 51 as related. For example, as shown in FIG. 14, the nozzle holding | maintenance part 40 is connected with the washing | cleaning liquid supply pipe 122 which communicates with the washing | cleaning liquid supply source 121. As shown in FIG. The cleaning liquid supply nozzle 120 may discharge the cleaning liquid supplied from the cleaning liquid supply source 121 through the cleaning liquid supply pipe 122 downward from the discharge port 120a. In addition, the mesh plate 75 may or may not cover the discharge port 120a of the cleaning liquid supply nozzle 120.

In addition, the process of the wafer W in which the stopping phenomenon of predetermined time was complete | finished is the same as the example of FIG.

In the above example, since the supply system of the developing solution, the cleaning liquid, and the air is not connected to the nozzle holding portions 40 and 41 to drive, the piping configuration of the supply system can be simplified.

In the above embodiment, the cleaning liquid supply nozzle 120 is provided between the water receiving part 11 and the developing processing part 12, but is provided adjacent to the mesh plate 75 on the X-direction forward direction side of the mesh plate 75. It may be okay. Fig. L5 shows an related example. For example, the mesh plate 75 is formed short in the X direction and shorter than the diameter of the wafer W, for example. For example, the mesh plate 75 is formed in the length of about half of the diameter of the wafer W, for example.

The cleaning liquid supply nozzle 120 described above is provided near the mesh plate 75 on the X-direction forward direction side of the mesh plate 75. The distance in the X direction from the discharge position of the developer supply nozzle 50 to the discharge position of the cleaning solution supply nozzle 120 is shorter than the diameter of the wafer W, and is set to about half the diameter of the wafer W, for example. The washing | cleaning liquid supply nozzle 120 is hold | maintained by the nozzle holding part 135 fixed to the ceiling surface of the processing container 10, for example. In addition, the cleaning liquid supply nozzle 130 is provided below the cleaning liquid supply nozzle 120 in the same manner as in the above-described embodiment. The cleaning liquid supply nozzle 130 is held by the nozzle holding unit 136. The substrate transfer mechanism 13 can pass the lower portion of the mesh plate 75 along the mesh plate 75 through the wafer W and also pass the lower portion of the discharge port 120a of the cleaning liquid supply nozzle 120.

And at the time of image development, the wafer W of the delivery part 11 is conveyed by the board | substrate conveyance mechanism 13 to the X direction positive direction by the image development part 12 side similarly to the said embodiment. At this time, as shown in FIG. 16A, the developing solution K is supplied from the developing solution supply nozzle 50 to the surface of the wafer W through the mesh plate 75. As shown in FIG. The wafer W passes through the lower side of the mesh plate 75 while the developer K is liquefied and develops the wafer W at this time. As shown in FIG. 16B, the cleaning liquid A is discharged from the cleaning liquid supply nozzle 120, and the cleaning liquid A is supplied immediately after the wafer W is completed passing through the mesh plate 75. The development is stopped by the supply of the cleaning liquid (A). In this way, the developer K is supplied from the developer supply nozzle 50 and the wafer W is supplied from the cleaning solution supply nozzle 120 on the forward direction of the mesh plate 75 to the cleaning solution A. Develop time. This developing time is controlled by adjusting the conveyance speed of the wafer W by the board | substrate conveyance mechanism 13. As shown in FIG.

As shown in FIG. 16C, when the wafer W passes under the cleaning liquid supply nozzle 120, the cleaning liquid A is supplied to the entire surface of the surface of the wafer W, and the development of the entire surface of the wafer W is stopped. At this time, the liquid activation of the cleaning liquid A is formed on the surface of the wafer W. FIG. In addition, the cleaning liquid is also produced from the cleaning liquid supply nozzle 130 during the passage of the wafer W, and the back surface side of the wafer W is also cleaned.

After the liquid activation of the cleaning liquid is formed on the wafer W, the wafer W is moved in the X-direction portion direction on the receiving part 11 side so that the wafer W is moved by the air from the air injection nozzles 51 and 70. To dry.

According to this example, since the time from the supply of the developing solution to the supply of the cleaning solution is constant at any point on the surface of the wafer, the development in the wafer surface can be performed uniformly. Moreover, the developing time of the wafer W can be controlled simply by adjusting the conveyance speed of the wafer W of the board | substrate conveyance mechanism 13.

In the cleaning liquid supply nozzle 120 described in the above embodiment, as shown in FIG. 17, the discharge port 120a may be directed downward on the slope opposite to the mesh plate 75. This can prevent the cleaning liquid from contaminating the mesh plate 75 entering the mesh plate 75.

In the above embodiment, although the mesh plate 75 is fixed and arrange | positioned, you may make it move with the movement of the wafer W. As shown in FIG.

18 shows an example. As shown in FIG. 18, the mesh plate conveyance mechanism 150 which holds and conveys the mesh plate 75 in the processing container 10 is provided. As shown in FIG. 19, the mesh plate conveyance mechanism 150 conveys the mesh plate 75 in a position higher than the conveyance path of the wafer by the substrate conveyance mechanism 13 and lower than the developer supply nozzle 50 in the X direction. can do.

The mesh plate conveyance mechanism 150 is parallel with the rail 31 from the sorghum part 11 to the developing process part 12 outside the each rail 31 in the processing container 10, for example, as shown in FIG. It is provided with a rail 151 which extends easily. A slider 152 is provided on each rail 151. The slider 152 is provided with a drive source, such as a motor, for example, and can move along the rail 151 in the X direction.

On each slider 152, the holding arm 153 which holds the edge part at the side of the Y direction of the mesh plate 75 is attached.

In this embodiment, the mesh plate conveyance mechanism 150 includes a rail 151; It is comprised by the slider 152 and the holding arm 153. The holding plate 153 holding the mesh plate 75 is moved in the X direction by the mesh plate conveying mechanism 150 to convey the mesh plate 75 between the water receiving portion 11 and the developing processing portion 12. can do. In addition, the control of the operation | movement of the mesh plate conveyance mechanism 150 is performed by the control part C. FIG.

In the development process, when the wafer W is first loaded from the outside into the processing container 10, and the wafer W is supported by the support pin 22, the mesh plate 75 is disposed above the wafer W. At this time, the mesh plate 75 is disposed so as to cover the entire surface of the upper surface of the wafer W in plan view. Then, similarly to the above embodiment, when the wafer W is moved to the developing unit 12 side by the substrate transfer mechanism 13, the mesh plate 75 is also developed by the mesh plate transfer mechanism 150. ) Is moved to the side. At this time, the mesh plate 75 is conveyed at the same speed as the wafer W, and the state which covered the upper surface of the wafer W is maintained.

When the wafer W passes through the lower part of the developer supply nozzle 50 as shown in FIG. 20, discharge of the developer is started before the wafer W passes through the lower part of the developer supply nozzle 50. Is supplied onto the wafer W via the mesh plate 75. The developing solution K supplied on the wafer W is sandwiched between the mesh plate 75 and the wafer W and filled. At this time, since the hydrophilicity of the mesh plate 75 is high as in the above embodiment, the shear resistance between the mesh plate 75 and the developing solution K is small and the flow of the developing solution K on the wafer W is suppressed. . When the wafer W and the mesh plate 75 pass through the bottom of the developer supply nozzle 50, the developer K is supplied to the entire surface of the surface of the wafer W. As shown in FIG.

As shown in FIG. 19, the wafer W and the mesh plate 75 passing through the lower side of the developer supply nozzle 50 are stopped at a position fitted to the cleaning solution supply nozzle 80 on the developing part 12 side as viewed from the side. do. The wafer W is stopped for a predetermined time in this state. When the stoppage is completed, the cleaning liquid supply nozzle 80 moves from one end side of the wafer W to the other end side in the Y-direction while discharging the cleaning liquid in the same manner as in the above-described embodiment, and the liquid of the cleaning liquid on the surface of the wafer W. Activity is formed.

Thereafter, as shown in FIG. 21, only the wafer W is moved in the X-direction portion direction on the side of the receiver 11, and the wafer is moved by the air knife from the air jet nozzle 51 in the same manner as in the above embodiment. Liquid activation of the cleaning liquid on the surface of (W) is removed. In addition, the liquid is removed from the back surface of the wafer W by the air from the air jet nozzle 70.

When the wafer W moves to the upper side of the support pin 22 in the receiver 11, it is stopped and received by the support pin 22. Then, the wafer W is carried out from the conveyance port 20 by an external conveyance arm.

On the other hand, the mesh plate 75 is moved to the water-receiving part 11 side after the wafer W is carried out, for example, and is dried by the air spray nozzles 51 and 70 similarly to the wafer W. As shown in FIG. Then, for example, it waits on the upper side of the support pin 22 until the next wafer W is loaded.

Also by this example, since the mesh plate 75 subjected to the hydrophilization treatment is interposed between the moving wafer W and the developer supply nozzle 50, the wet nature of the developer of the mesh plate 75 is increased. Even when the developer W is supplied while the wafer W moves, the shear resistance between the developer on the wafer W and the mesh plate 75 decreases, so that the flow of the development on the wafer W is suppressed. As a result, the developing solution on the wafer W is stabilized, and the development in the wafer surface is stabilized and is performed without spots.

In addition, in the above example in which the mesh plate 75 and the wafer W are moved together, the cleaning supply nozzle 80 may be disposed between the water receiving unit 11 and the developing unit 12.

As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, this invention is not limited to the example which concerns. For example, in the above example, the whole of the mesh plate 75 is hydrophilized, but at least the lower surface of the mesh plate 75 may be hydrophilized.

In addition, although the above embodiment was an example which develops the wafer W, this invention is applicable also when developing other substrates, such as mask reticle for FPD (flat panel display) and photomask, other than a wafer. Can be.

The present invention is useful when suppressing generation of particles in a developing apparatus that does not rotate a substrate. Moreover, this invention is useful when suppressing convection in the developing solution supplied to the board | substrate.

Claims (28)

As a developing apparatus for a substrate, In the processing container, the board | substrate receiving part which carries out board | substrate reception and the developing process part which develops a board | substrate are performed between the outside of a processing container, are arrange | positioned, In the said processing container, the conveyance mechanism which conveys a board | substrate in the state which hold | maintained the outer surface of a board | substrate from both sides between the said board | substrate receiving part and the said developing process part is provided, Above the conveyance path which conveys a board | substrate by the said conveyance mechanism between the said board | substrate delivery part and the said development process part, the developing solution supply nozzle which supplies a developing solution to a board | substrate, and the gas injection nozzle which sprays gas to a board | substrate are provided, And a cleaning solution supply nozzle for supplying the cleaning solution to the substrate. In the development processing apparatus of the substrate of claim 1, And the cleaning solution supply nozzle supplies the cleaning solution to the substrate while horizontally moving in a direction perpendicular to the conveyance direction of the substrate by the conveyance mechanism. In the development processing apparatus of the substrate of claim 2, The cleaning solution supply nozzle includes an upper nozzle for supplying the cleaning solution to the upper surface of the substrate and a lower nozzle for supplying the cleaning solution to the wafer surface of the substrate so as to sandwich the substrate in the developing unit. And the upper nozzle and the lower nozzle are configured to discharge the cleaning liquid from one end of the substrate in the conveying direction of the substrate to the other end thereof. In the development apparatus of the substrate of claim 3, And the cleaning liquid supply nozzle is formed in a substantially U shape surrounding the upper surface of the substrate in the developing processing portion, the side opposite to the substrate receiving portion of the substrate, and the wafer surface of the substrate. In the development processing apparatus of the substrate of claim 1, A nozzle holding part is provided above the conveyance path of the said board | substrate between the said board | substrate receiving part and the said developing process part, And the gas ejection nozzles and the developer supplying nozzles are arranged in this order in the nozzle holding portion from the substrate receiving portion toward the developing processing portion. In the development processing apparatus of the substrate of claim 1, And a gas injection nozzle is also provided on a lower side of the transfer path of the substrate. As a developing apparatus for a substrate, In the processing container, the board | substrate receiving part which carries out board | substrate reception and the developing process part which develops a board | substrate are performed between the outside of a processing container, are arrange | positioned, In the said processing container, the conveyance mechanism which conveys a board | substrate in the state which hold | maintained the outer surface of a board | substrate from both sides between the said board | substrate receiving part and the said developing process part is provided, A gas is sprayed on the substrate and the cleaning solution supply nozzle for supplying the cleaning solution to the substrate, and the cleaning solution supply nozzle for supplying the cleaning solution to the substrate, above the conveyance path for transporting the substrate by the transport mechanism between the substrate delivery section and the development processing section. A developing processing apparatus, wherein a gas jet nozzle is provided. In the development processing apparatus of the substrate of claim 7, A nozzle holding part is provided above the conveyance path of the said board | substrate between the said board | substrate receiving part and the said developing process part, And said gas ejection nozzle, said cleaning liquid supply nozzle, and said developer supply nozzle are arranged in this order from said substrate holding portion toward said developing processing portion. In the development processing apparatus of the substrate of claim 7, A developing solution supplying nozzle is provided below the conveying path of the substrate. In the development processing apparatus of the substrate of claim 9, And a gas injection nozzle is provided below the conveyance path of the substrate. In the development processing apparatus of the substrate of claim 10, The nozzle holding part is provided in the lower part of the conveyance path of the said board | substrate between the said board | substrate receiving part and the said developing process part, And a gas injection nozzle and the cleaning liquid supply nozzle are arranged in this order in the nozzle holding portion below the transfer path of the substrate from the substrate receiving portion to the developing processing portion. In the development processing apparatus of the substrate of claim 1, And an air supply unit that forms an air curtain between the substrate delivery unit and the development processing unit. In the development processing apparatus of the substrate of claim 12, The gas ejection nozzle is used as the air supply part. In the development processing apparatus of the substrate of claim 1, A developing port is formed in the processing container on the substrate receiving part side, and an exhaust port is formed on the developing part side. In the development processing apparatus of the substrate of claim 1, The substrate receiving portion is provided with a support member for supporting the substrate, And the conveying mechanism grips an outer surface of the substrate on the support member. In the development processing apparatus of the substrate of claim 1, The conveying mechanism includes a holding member for holding both sides of the substrate in a direction perpendicular to the conveying direction of the substrate, and a moving member for supporting the holding member and moving in the perpendicular direction, And a resilient body interposed between the gripping member and the moving member. In the development apparatus of the substrate of claim 16, On the rear side of the holding member located on the opposite side of the holding substrate is fixed member fixed to the eastern member is installed, And the holding member and the holding member are connected via an elastic body. In the development apparatus of the substrate of claim 16, The development end surface of the said holding member is curved so that the contact end surface with the outer surface of the board | substrate may be concave inwardly when viewed from the side surface. As a development treatment method for developing a substrate using a development apparatus, The developing apparatus is provided in a processing container, in which a substrate receiving unit for receiving substrates and a developing processor for developing substrates are arranged in a line between the outside of the processing container, In the said processing container, the conveyance mechanism which conveys a board | substrate in the state which hold | maintained the outer surface of a board | substrate from both sides between the said board | substrate receiving part and the said developing process part is provided, A gas is sprayed on the substrate and the cleaning solution supply nozzle for supplying the cleaning solution to the substrate, and the cleaning solution supply nozzle for supplying the cleaning solution to the substrate, above the conveyance path for transporting the substrate by the transport mechanism between the substrate delivery section and the development processing section. Installed gas injection nozzle, Holding the outer surface of the substrate by the transfer mechanism by the transfer mechanism; A process of conveying a substrate of a substrate receiving part by a conveying mechanism to a developing processing portion in a discharged state from a developing solution supply nozzle to forming a liquid film of a developing solution on the substrate; Stopping developing the substrate in the developing unit; Reciprocating the substrate by the transfer mechanism between the developing processing unit and the substrate receiving unit in a state in which the cleaning liquid is discharged from the cleaning liquid supply nozzle, and forming a liquid film of the cleaning liquid on the substrate; And a step of conveying the substrate of the developing treatment unit to the substrate receiving unit by the conveying mechanism to remove the cleaning liquid on the substrate while injecting gas from the gas injection nozzle. A developing apparatus for arranging a developer supply nozzle on a substrate and supplying the developer to the substrate by relatively horizontally moving the developer supply nozzle and the substrate in a discharged state from the developer supply nozzle. It has a mesh plate which can be interposed between a developing solution supply nozzle and a board | substrate and can pass a developing solution, The mesh plate is close to the substrate so that the mesh plate is in contact with the developer supplied on the substrate, A hydrophilic treatment is carried out on at least the surface of the substrate side of the mesh plate. In the developing apparatus of claim 20, And at least the surface of the substrate side of the mesh plate is hydrophilized such that the contact angle with respect to the developer is 10 ° or less. In the developing apparatus of claim 20, On the wafer surface of the developer supply nozzle, a discharge port is formed in a predetermined direction over a distance longer than the dimension of one direction of the substrate, It further has a board | substrate conveyance mechanism which conveys a board | substrate in the horizontal direction orthogonal to the said predetermined direction, and makes the said board | substrate pass under the discharge port of the said developing solution supply nozzle, One end of the mesh plate is positioned below the discharge port of the developer supply nozzle, and the mesh plate is formed from the position below the discharge port toward the passage direction of the substrate, and the upper surface of the substrate has passed through the bottom of the discharge port. A developing apparatus characterized in that it is formed so as to cover all or part of the. In the developing apparatus of claim 22, The cleaning liquid supply nozzle which supplies a cleaning liquid to a board | substrate is provided adjacent to the said mesh board in the passage direction side of the said board | substrate of the said mesh board, And the substrate conveyance mechanism is capable of passing the substrate through the lower side of the mesh plate in the direction of the substrate passing direction and passing the lower side of the cleaning liquid supply nozzle. In the developing apparatus of claim 23, The cleaning liquid supply nozzle has a discharge port of the cleaning liquid on the wafer surface, The substrate conveyance mechanism is characterized in that the substrate is conveyed so that the time from the passage of the substrate through the lower side of the discharge port of the developer solution supply nozzle to the side of the discharge port of the cleaning solution supply nozzle becomes a predetermined development time. Processing unit. In the developing apparatus of claim 20, The mesh plate is formed in a size that can cover the entire surface of the upper surface of the substrate, On the wafer surface of the developer supply nozzle, a discharge port is formed in a predetermined direction over a distance longer than the dimension of one direction of the substrate, A substrate conveying mechanism for conveying the substrate in a horizontal direction orthogonal to the predetermined direction and allowing the substrate to pass under the discharge port of the developer supply nozzle; and the mesh plate in the same direction as the substrate while covering the upper surface of the substrate. And a mesh plate conveyance mechanism for conveying and passing the mesh plate under a discharge port of the developer supply nozzle. In the developing apparatus of claim 22, And a cleaning liquid supply nozzle for supplying a cleaning liquid to the substrate through the mesh plate from above the mesh plate. In the developing apparatus of claim 25, And a cleaning liquid supply nozzle for supplying a cleaning liquid to the substrate through the mesh plate from above the mesh plate. In the developing apparatus of claim 22, In the processing container, the board | substrate receiving part which carries out board | substrate reception and the developing process part which develops a board | substrate are performed between the outside of a processing container, are arrange | positioned, Between the substrate receiving part and the developing processing unit, a gas injection nozzle for injecting a gas to the developer supply nozzle and the substrate is disposed, The said substrate conveyance mechanism conveys between the said board | substrate delivery part and the image development processing part in the state which grasped the outer surface of a board | substrate from both sides, The image development processing apparatus characterized by the above-mentioned.

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