KR20070002342A - Method for manufacturing flash memory device - Google Patents

Method for manufacturing flash memory device Download PDF

Info

Publication number
KR20070002342A
KR20070002342A KR1020050057828A KR20050057828A KR20070002342A KR 20070002342 A KR20070002342 A KR 20070002342A KR 1020050057828 A KR1020050057828 A KR 1020050057828A KR 20050057828 A KR20050057828 A KR 20050057828A KR 20070002342 A KR20070002342 A KR 20070002342A
Authority
KR
South Korea
Prior art keywords
gate lines
memory device
flash memory
oxide layer
hdp
Prior art date
Application number
KR1020050057828A
Other languages
English (en)
Other versions
KR100680465B1 (ko
Inventor
Young Ok Hong
Original Assignee
Hynix Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hynix Semiconductor Inc filed Critical Hynix Semiconductor Inc
Priority to KR1020050057828A priority Critical patent/KR100680465B1/ko
Priority to US11/440,519 priority patent/US7572697B2/en
Priority to CN200610091782XA priority patent/CN1892999B/zh
Publication of KR20070002342A publication Critical patent/KR20070002342A/ko
Application granted granted Critical
Publication of KR100680465B1 publication Critical patent/KR100680465B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1020050057828A 2005-06-30 2005-06-30 플래시 메모리 소자의 제조 방법 KR100680465B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020050057828A KR100680465B1 (ko) 2005-06-30 2005-06-30 플래시 메모리 소자의 제조 방법
US11/440,519 US7572697B2 (en) 2005-06-30 2006-05-25 Method of manufacturing flash memory device
CN200610091782XA CN1892999B (zh) 2005-06-30 2006-06-12 闪存器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050057828A KR100680465B1 (ko) 2005-06-30 2005-06-30 플래시 메모리 소자의 제조 방법

Publications (2)

Publication Number Publication Date
KR20070002342A true KR20070002342A (en) 2007-01-05
KR100680465B1 KR100680465B1 (ko) 2007-02-08

Family

ID=37590121

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050057828A KR100680465B1 (ko) 2005-06-30 2005-06-30 플래시 메모리 소자의 제조 방법

Country Status (3)

Country Link
US (1) US7572697B2 (ko)
KR (1) KR100680465B1 (ko)
CN (1) CN1892999B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100824630B1 (ko) * 2006-12-29 2008-04-24 동부일렉트로닉스 주식회사 게이트 패턴 측벽에 스페이서 패턴을 갖는 반도체 장치 및그 제조 방법
WO2012059793A1 (en) * 2010-11-05 2012-05-10 Nokia Corporation Method and apparatus for scheduling radio frequency resources in a multiple-radio-stacks context
US10885064B2 (en) * 2015-12-14 2021-01-05 Pivotal Software, Inc. Performing global computation in distributed database systems

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010055879A (ko) * 1999-12-13 2001-07-04 윤종용 노어형 플래쉬 메모리소자의 제조방법
US6417046B1 (en) * 2000-05-05 2002-07-09 Taiwan Semiconductor Manufacturing Company Modified nitride spacer for solving charge retention issue in floating gate memory cell
KR20020003761A (ko) 2000-07-03 2002-01-15 윤종용 이중 스페이서를 갖는 비휘발성 메모리 소자 제조 방법
US6355524B1 (en) * 2000-08-15 2002-03-12 Mosel Vitelic, Inc. Nonvolatile memory structures and fabrication methods
KR100381953B1 (ko) * 2001-03-16 2003-04-26 삼성전자주식회사 노어형 플래시 메모리 소자의 제조방법
JP2005044844A (ja) * 2003-07-23 2005-02-17 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
KR100546936B1 (ko) * 2004-10-21 2006-01-26 주식회사 하이닉스반도체 반도체 메모리 소자의 금속배선 형성방법
KR100671627B1 (ko) * 2004-10-25 2007-01-19 주식회사 하이닉스반도체 플래쉬 메모리소자의 소스 콘택 형성방법
KR100672123B1 (ko) * 2006-02-02 2007-01-19 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성방법

Also Published As

Publication number Publication date
US7572697B2 (en) 2009-08-11
CN1892999B (zh) 2012-08-22
CN1892999A (zh) 2007-01-10
US20070004138A1 (en) 2007-01-04
KR100680465B1 (ko) 2007-02-08

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