KR20060131038A - Liquid crystal display and manufacturing method of color filter array panel - Google Patents

Abstract

An LCD and a method for manufacturing a color filter substrate are provided to reduce the texture generating around a cutout, thereby improving the aperture ratio of a pixel, by forming a stepped portion at the edge of the cutout of a common electrode. A field generating electrode(191) is formed above a first substrate(110), wherein the field generating electrode has cutouts(91,92a,92b). A second substrate(210) is disposed to face the first substrate. A second field generating electrode(270) is formed above the second substrate, wherein the field generating electrode has cutouts(71,72a,72b). A liquid crystal layer(3) is positioned between the first field generating electrode and the second field generating electrode. In the first field generating electrode, the boundary portions of the cutouts are thinner than any other portions.

Description

The manufacturing method of a liquid crystal display device and a color filter display board {LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD OF COLOR FILTER ARRAY PANEL}

1 is a layout view of a liquid crystal display according to an exemplary embodiment of the present invention.

FIG. 2 is a layout view illustrating a structure of a thin film transistor array panel for a liquid crystal display of FIG. 1.

FIG. 3 is a layout view of a common electrode display panel for the liquid crystal display of FIG. 1.

FIG. 4 is a cross-sectional view of the liquid crystal display of FIG. 1 taken along the line IV-IV'-IV ''.

5A through 5D are cross-sectional views sequentially illustrating a method of manufacturing a color filter display panel according to an exemplary embodiment of the present invention.

6 is a layout view of a liquid crystal display according to another exemplary embodiment of the present invention.

FIG. 7 is a cross-sectional view of the liquid crystal display of FIG. 6 taken along the line VII-VII′-VII ″. FIG.

8 is a layout view of a liquid crystal display according to another exemplary embodiment of the present invention.

FIG. 9 is a cross-sectional view of the liquid crystal display of FIG. 8 taken along the line IX-IX'-IX ". FIG.

The present invention relates to a method for manufacturing a liquid crystal display device and a color filter display plate.

The liquid crystal display is one of the most widely used flat panel display devices and includes two display panels on which field generating electrodes such as a pixel electrode and a common electrode are formed, and a liquid crystal layer interposed therebetween. The liquid crystal display generates an electric field in the liquid crystal layer by applying a voltage to the field generating electrode, thereby determining an orientation of the liquid crystal molecules of the liquid crystal layer and controlling the polarization of incident light to display an image.

Among the liquid crystal display devices, a vertically aligned mode liquid crystal display in which liquid crystal molecules are arranged such that their long axes are perpendicular to the display panel without an electric field applied to them, has a high contrast ratio and a wide reference viewing angle.

Means for implementing a wide viewing angle in a vertical alignment liquid crystal display include a method of forming a cutout in the field generating electrode and a method of forming a protrusion on the field generating electrode. Since the incision or protrusion determines the direction in which the liquid crystal molecules are inclined, the reference viewing angle can be widened by disposing the variously arranged and dispersing the inclination directions of the liquid crystal molecules in various directions.

However, in the case of a liquid crystal display device having an incision, a texture phenomenon occurs because the liquid crystal molecules of the portion corresponding to the incision are not properly aligned. As the area of the texture increases, the finger print phenomenon increases, and the aperture ratio of the pixel decreases. Therefore, the width of the incision should be narrowed to reduce the area of the texture. However, if the width of the incision is narrowed, the process margin is reduced during etching, and thus a conductor for forming an electrode may remain in the incision. The conductor may distort the liquid crystal alignment by distorting the electric field, which may result in more severe texture.

Therefore, the technical problem in the present invention is to reduce the texture phenomenon while widening the incision.

In order to solve this problem, the liquid crystal display of the present invention is formed on a first substrate, a first substrate, a first field generating electrode having an incision, a second substrate facing the first substrate, and a second substrate. A second field generating electrode having a cutout, and a liquid crystal layer positioned between the first field generating electrode and the second field generating electrode, wherein a portion of the first field generating electrode positioned at the boundary of the cutout is formed of the first field generating electrode; It is thinner than other parts of the electrode.

The boundary of the cutout may be stepped, or the first field generating electrode may become thinner as the first field generating electrode is adjacent to the cutout.

The cutouts of the first field generating electrode and the cutouts of the second field generating electrode may be alternately arranged.

The first field generating electrode may be 2 to 3 times thicker than the second field generating electrode.

The cutout width of the first field generating electrode may be 9 to 10 μm.

The thickness of the thin portion may be 200 ~ 300Å.

It may further include a color filter formed on the first substrate.

The display device may further include a thin film transistor formed on the second substrate and connected to the second field generating electrode.

According to another aspect of the present invention, there is provided a method of manufacturing a color filter display panel, the method including forming a light blocking member on a substrate, forming a color filter on a light blocking member, forming an overcoat on a color filter, and forming an overcoat. Forming a common electrode, forming a photosensitive film having a first portion on the common electrode, a second portion thicker than the first portion, etching the common electrode with the photosensitive film as a mask to form an incision, and Removing and removing a portion of the upper portion of the common electrode exposed to the second portion as a mask.

Removing a part of the upper part of the common electrode proceeds until the common electrode remains at a thickness of 200 to 300 Å.

In the step of forming the photoresist film, the thickness of the photoresist film may be differently formed using a slit, a translucent film, or using a reflow method.

DETAILED DESCRIPTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Next, a liquid crystal display according to an exemplary embodiment of the present invention will be described with reference to the drawings.

1 is a layout view of a liquid crystal display according to an exemplary embodiment of the present invention, FIG. 2 is a layout view showing a structure of a thin film transistor array panel for the liquid crystal display of FIG. 1, and FIG. 3 is a common view for the liquid crystal display of FIG. 1. 4 is a layout view of an electrode display panel, and FIG. 4 is a cross-sectional view of the liquid crystal display of FIG. 1 taken along the line IV-IV′-IV ″.

The liquid crystal display according to the present exemplary embodiment includes a thin film transistor array panel 100 and a common electrode panel 200 facing each other, and a liquid crystal layer 3 interposed between the two display panels 100 and 200.

First, the thin film transistor array panel 100 will be described in detail with reference to FIGS. 1, 2, and 4.

A plurality of gate lines 121 and a plurality of storage electrode lines 131 are formed on the insulating substrate 110.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction. Each gate line 121 includes a plurality of gate electrodes 124 protruding up and down and a wide end portion 129 for connection with another layer or an external driving circuit. A gate driving circuit (not shown) for generating a gate signal may be mounted on a flexible printed circuit film (not shown) attached to the substrate 110 or directly mounted on the substrate 110, It may be integrated into the substrate 110. When the gate driving circuit is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The storage electrode line 131 receives a predetermined voltage, and includes a stem line extending substantially in parallel with the gate line 121, a plurality of storage electrode sets 133a, 133b, 133c, and 133d split therefrom, and a connection part 133e. . Each of the storage electrode lines 131 is positioned between two adjacent gate lines 121, and the stem line is closer to the upper gate line 121 of the two gate lines 121.

Each of the storage electrode sets 133a to 133d extends in the vertical direction and extends in a diagonal direction with the first and second storage electrodes 133a and 133b which are separated from each other, and the first storage electrode 133a and the second storage electrode. Third and fourth sustain electrodes 133c and 133d connecting the 133b to each other are included.

The first storage electrode 133a has a fixed end connected to the storage electrode line 131 and a free end positioned on the opposite side thereof and having a protrusion.

The third and fourth storage electrodes 133c and 133d are connected to both ends of the second storage electrode 133b near the center of the first storage electrode 133a, respectively. The third and fourth sustain electrodes 133c and 133d have inverted symmetry with respect to the center line between two adjacent gate lines 121. The connection part 133e connects the adjacent first storage electrode 133a and the second storage electrode 133b of the adjacent storage electrode sets 133a to 133d.

The gate line 121 and the storage electrode line 131 may be formed of aluminum-based metal such as aluminum (Al) or aluminum alloy, silver-based metal such as silver (Ag) or silver alloy, copper-based metal such as copper (Cu) or copper alloy, or molybdenum ( It may be made of molybdenum-based metals such as Mo) or molybdenum alloy, chromium (Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties. One of the conductive films is made of a metal having low resistivity, such as aluminum-based metal, silver-based metal, or copper-based metal, so as to reduce signal delay or voltage drop. In contrast, other conductive films are made of other materials, particularly materials having excellent physical, chemical, and electrical contact properties with indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum-based metals, chromium, tantalum, and titanium. Good examples of such a combination include a chromium bottom film, an aluminum (alloy) top film, and an aluminum (alloy) bottom film and a molybdenum (alloy) top film. However, the gate line 121 and the storage electrode line 131 may be made of various other metals or conductors. Side surfaces of the gate line 121 and the storage electrode line 131 are inclined with respect to the surface of the substrate 110, and the inclination angle is preferably about 30 to 80 degrees.

A gate insulating layer 140 made of silicon nitride (SiN _x ) or silicon oxide (SiOx) is formed on the gate line 121 and the storage electrode line 131.

On the gate insulating layer 140, a plurality of linear semiconductors 151 made of hydrogenated amorphous silicon (amorphous silicon is abbreviated a-Si), polycrystalline silicon, or the like are formed. The linear semiconductor 151 mainly extends in the vertical direction and includes a plurality of protrusions 154 extending toward the gate electrode 124.

The linear semiconductor 151 has a wider width in the vicinity of the gate line 121 and the storage electrode line 131 and covers them widely.

A plurality of linear and island ohmic contacts 161 and 165 are formed on the semiconductor 151. The ohmic contacts 161 and 165 may be made of a material such as n + hydrogenated amorphous silicon in which n-type impurities such as phosphorus are heavily doped, or may be made of silicide. The linear ohmic contact 161 has a plurality of protrusions 163, and the protrusion 163 and the island-type ohmic contact 165 are paired and disposed on the protrusion 154 of the semiconductor 151.

Side surfaces of the semiconductor 151 and the ohmic contacts 161 and 165 are also inclined with respect to the surface of the substrate 110, and the inclination angle is about 30 to 80 degrees.

A plurality of data lines 171, a plurality of drain electrodes 175, and a plurality of isolated metal pieces 178 are disposed on the ohmic contacts 161 and 165 and the gate insulating layer 140. ) Is formed.

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121. Each data line 171 also crosses the stem line and the connecting portion 133e of the storage electrode line 131. Each data line 171 includes a plurality of source electrodes 173 extending toward the gate electrode 124 and an end portion 179 having a large area for connection with another layer or an external driving circuit. A data driving circuit (not shown) for generating a data signal is mounted on a flexible printed circuit film (not shown) attached to the substrate 110, directly mounted on the substrate 110, or integrated in the substrate 110. Can be. When the data driving circuit is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The drain electrode 175 is separated from the data line 171 and faces the source electrode 173 with respect to the gate electrode 124. Each drain electrode 175 has one end having a large area and the other end having a rod shape. The rod-shaped end portion is bent toward the source electrode 173 and partially surrounded by the source electrode 173 protruding in a C shape.

One gate electrode 124, one source electrode 173, and one drain electrode 175 together with the protrusion 154 of the semiconductor 151 form one thin film transistor (TFT). A channel of the transistor is formed in the protrusion 154 between the source electrode 173 and the drain electrode 175.

The metal piece 178 is positioned on the gate line 121 near the free end of the sustain electrode 133a.

The data line 171, the drain electrode 175, and the metal piece 178 are preferably made of a refractory metal such as molybdenum, chromium, tantalum, and titanium, or an alloy thereof, and a refractory metal film (not shown). And a low resistance conductive film (not shown). Examples of the multilayer structure include a double layer of chromium or molybdenum (alloy) lower layer and an aluminum (alloy) upper layer, and a triple layer of molybdenum (alloy) lower layer and aluminum (alloy) interlayer and molybdenum (alloy) upper layer. However, in addition to the data line 171, the drain electrode 175, and the metal piece 178, various kinds of metals or conductors may be used.

The side of the data line 171, the drain electrode 175, and the metal piece 178 may be inclined at an inclination angle of about 30 to 80 degrees with respect to the surface of the substrate 110.

The ohmic contacts 161 and 165 exist only between the semiconductor 151 below and the data line 171 and the drain electrode 175 thereon, thereby lowering the contact resistance. In most places, the width of the linear semiconductor 151 is smaller than the width of the data line 171. However, as described above, the width of the linear semiconductor 151 is widened at the portion where it meets the gate line 121 to smooth the profile of the surface. Prevents disconnection.

A passivation layer 180 is formed on the data line 171, the drain electrode 175, the metal piece 178, and the exposed semiconductor 151. The passivation layer 180 may be made of an inorganic insulator or an organic insulator, and may have a flat surface. Examples of the inorganic insulator include silicon nitride and silicon oxide. The organic insulator may have photosensitivity and the dielectric constant is preferably about 4.0 or less. However, the passivation layer 180 may have a double layer structure of the lower inorganic layer and the upper organic layer so as not to damage the exposed portion of the semiconductor 151 while maintaining excellent insulating properties of the organic layer.

In the passivation layer 180, a plurality of contact holes 182 and 185 exposing the end portion 179 and the drain electrode 175 of the data line 171 are formed, respectively, and the passivation layer 180 and the gate insulating layer are formed. In the 140, a plurality of contact holes 181 exposing the end portion 129 of the gate line 121 and a plurality of contact holes 183a exposing a part of the storage electrode line 131 near the fixed end of the first storage electrode 133a. And a plurality of contact holes 183b exposing the protruding portion of the free end of the first storage electrode 133a.

A plurality of pixel electrodes 191, a plurality of overpasses 83, and a plurality of contact assistants 81 and 82 are formed on the passivation layer 180. These may be made of a transparent conductive material such as ITO or IZO or a reflective metal such as aluminum or silver alloy.

The pixel electrode 191 is physically and electrically connected to the drain electrode 175 through the contact hole 185 and receives a data voltage from the drain electrode 175. The pixel electrode 191 to which the data voltage is applied is generated between the two electrodes 191 and 270 by generating an electric field together with the common electrode 270 of the other display panel 200 to which the common voltage is applied. The direction of the liquid crystal molecules 31 of the liquid crystal layer 3 is determined. The polarization of light passing through the liquid crystal layer 3 varies according to the direction of the liquid crystal molecules 31 determined as described above. The pixel electrode 191 and the common electrode 270 form a capacitor (hereinafter, referred to as a "liquid crystal capacitor") to maintain an applied voltage even after the thin film transistor is turned off.

The pixel electrode 191 overlaps the storage electrode line 131 including the storage electrodes 133a to 133d, and the left and right sides of the pixel electrode 191 are adjacent to the data line 171 than the storage electrodes 133a and 133b. do. A capacitor formed by the pixel electrode 191 and the drain electrode 175 electrically connected to the pixel electrode 191 overlapping the storage electrode line 131 is called a storage capacitor, and the storage capacitor enhances the voltage holding capability of the liquid crystal capacitor.

Each pixel electrode 191 has a substantially rectangular shape in which four corners are chamfered, and the chamfered hypotenuse forms an angle of about 45 degrees with respect to the gate line 121.

A central cutout 91, a lower cutout 92a, and an upper cutout 92b are formed in the pixel electrode 191, and the pixel electrode 191 includes a plurality of cutouts 91, 92a, and 92b. It is divided into partitions of. The cutouts 91, 92a and 92b are almost inverted symmetric with respect to an imaginary transverse centerline that bisects the pixel electrode 191. The lower and upper cutouts 92a and 92b extend obliquely from the right side to the left side of the pixel electrode 191 and overlap the third and fourth sustain electrodes 133c and 133d. The lower and upper cutouts 92a and 92b are positioned at the lower half and the upper half with respect to the horizontal center line of the pixel electrode 191, respectively. The lower and upper cutouts 92a and 92b extend perpendicular to each other at an angle of about 45 ° with respect to the gate line 121.

The central cutout 91 extends along the horizontal centerline of the pixel electrode 191 and has an inlet at the right side thereof. The inlet of the central incision 91 has a pair of hypotenuses substantially parallel to the lower incision 92a and the upper incision 92b, respectively.

Therefore, the lower half of the pixel electrode is divided into two regions by the lower cutout 92a, and the upper half is also divided into two regions by the upper cutout 92b. In this case, the number of regions or the number of cutouts may vary depending on the size of the pixel, the ratio of the length of the horizontal side to the vertical side of the pixel electrode, and the type or characteristics of the liquid crystal layer 3.

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 through the contact holes 181 and 182, respectively. The contact auxiliary members 81 and 82 compensate for and protect the adhesion between the end portions 179 and 129 of the data line 171 and the gate line 121 and the external device.

The connecting leg 83 crosses the gate line 121, and the exposed end of the free end of the first storage electrode 133a through the contact holes 183a and 183b positioned opposite to each other with the gate line 121 interposed therebetween. And the exposed portion of the storage electrode line 131. The connecting leg 83 may overlap the metal piece 178 and be electrically connected to the metal piece 178. The storage electrode lines 131 including the storage electrodes 133a to 133d may be used together with the connecting legs 83 and the metal pieces 178 to repair defects in the gate line 121, the data line 171, or the thin film transistor. . When the gate line 121 is repaired, the gate line 121 and the sustain electrode line 131 are formed by connecting the gate line 121 and the connecting leg 83 by laser irradiation at the intersection of the gate line 121 and the connecting leg 83. ) Is electrically connected. At this time, the metal piece 178 strengthens the electrical connection between the gate line 121 and the connecting leg 83.

Next, the common electrode display panel 200 will be described with reference to FIGS. 1, 3, and 4.

A light blocking member 220 called a black matrix is formed on an insulating substrate 210 made of transparent glass or the like. The light blocking member 220 has a plurality of openings 225 facing the pixel electrode 191 and having substantially the same shape as the pixel electrode 191. However, the light blocking member 220 may include only a linear portion extending along the data line 171, and may further include a portion facing the thin film transistor. The light blocking member 220 may be formed of a single layer of chromium or a double layer of chromium and chromium oxide, or may be formed of an organic layer including a black pigment.

A plurality of color filters 230 are also formed on the substrate 210, most of which are located in the opening 225 of the light blocking member 230. However, the color filter 230 may extend in the vertical direction along the pixel electrode 191. The color filter 230 may display one of the primary colors, and examples of the primary colors may include three primary colors such as red, green, and blue. The edges of the neighboring color filters 230 may overlap.

An overcoat 250 is formed on the color filter 230 to prevent the color filter 230 from being exposed and to provide a flat surface.

A common electrode 270 made of a transparent conductor such as ITO or IZO is formed on the overcoat 250. A plurality of cutouts 71, 72a, and 72b are formed in the common electrode 270.

One set of cutouts 71, 72a, and 72b includes a central cutout 71, a lower cutout 72a, and an upper cutout 72b facing one pixel electrode 191. Each of the cutouts 71, 72a, 72b is disposed between adjacent cutouts 91, 92a, 92b of the pixel electrode 191 or between the cutouts 91, 92a, 92b and the chamfered hypotenuse of the pixel electrode 191. It is arranged. In addition, each cutout 71, 72a, and 72b includes at least one diagonal line extending in parallel with the lower cutout 92a or the upper cutout 92b of the pixel electrode 191.

The lower and upper cutouts 72a and 72b each include an oblique section, a horizontal section and a vertical section. The oblique line portion extends substantially parallel to the lower or upper cutouts 92a and 92b of the pixel electrode 191 from the upper side or the lower side of the pixel electrode 191 to the left side. The horizontal portion and the vertical portion extend along the sides of the pixel electrode 191 from each end of the diagonal portion and form an obtuse angle with the diagonal portion.

The central cutout 71 includes a central transverse portion, a pair of oblique portions and a pair of longitudinal longitudinal portions. The central horizontal portion extends from the left side of the pixel electrode 191 to the right along the horizontal center line of the pixel electrode 191, and the pair of diagonal portions respectively lower toward the right side of the pixel electrode 191 at the end of the central horizontal portion. And almost parallel with the upper incisions 72a, 72b. The vertical longitudinal portion extends along the right side of the pixel electrode 191 from each end of the diagonal portion and forms an obtuse angle with the diagonal portion.

The thickness of the common electrode 270 is about 2 to 3 times thicker than the thickness of the pixel electrode 191, and the width of the cutouts 71, 72a, and 72b is about 9 μm to 10 μm. The portion of the common electrode 270 positioned at the boundary between the cutouts 71, 72a, and 72b is thinner than other portions to form a step shape. At this time, the thickness of the thin portion is approximately 200 to 300 mm 3, and the thickness of the other portion is approximately 800 to 1,400 mm 3. Alternatively, the thickness of the common electrode 270 may be gradually thinner as the thickness of the common electrode 270 is closer to the boundary line of the cutouts 71, 72a, and 72b (not shown).

The number and direction of the cutouts 71, 72a, and 72b may also vary depending on the design element, and the light blocking member 220 overlaps the cutouts 71 to 75b so that the light leakage near the cutouts 71, 72a and 72b may occur. Can be blocked.

Alignment layers 11 and 21 are coated on inner surfaces of the display panels 100 and 200, and they may be vertical alignment layers. Polarizers (not shown) are provided on the outer surfaces of the display panels 100 and 200, and the transmission axes of the two polarizers are orthogonal to each other, and one of the transmission axes is parallel to the gate line 121. In the case of a reflective liquid crystal display, one of two polarizers may be omitted.

The liquid crystal display may include a polarizer, display panels 100 and 200, and a backlight unit (not shown) for supplying light to the liquid crystal layer 3.

The liquid crystal layer 3 has negative dielectric anisotropy, and the liquid crystal molecules of the liquid crystal layer 3 are aligned such that their major axes are perpendicular to the surfaces of the two display panels 100 and 200 in the absence of an electric field. Therefore, incident light does not pass through the orthogonal polarizer and is blocked.

When a common voltage is applied to the common electrode 270 and a data voltage is applied to the pixel electrode 191, an electric field (electric field) substantially perpendicular to the surfaces of the display panels 100 and 200 is generated. In response to the electric field, the liquid crystal molecules attempt to change their long axis to be perpendicular to the direction of the electric field. From now on, the pixel electrode 191 and the common electrode 271 will be referred to as an electric field generating electrode.

Meanwhile, the inclinations 71, 72a, 72b, 91, 92a, and 92b of the field generating electrodes 191 and 270 and the hypotenuse of the pixel electrode 191 parallel thereto distort the electric field to determine the inclination direction of the liquid crystal molecules. Produces a horizontal component. The horizontal component of the electric field is perpendicular to the hypotenuse of the cutouts 71, 72a, 72b, 91, 92a, 92b and the hypotenuse of the pixel electrode 191. As the widths of the cutouts 71, 72a, and 72b become narrower, the electric field is formed vertically, so that the liquid crystal molecules positioned in this portion do not tilt in any direction, resulting in texture. However, when the edge of the common electrode 270 positioned at the boundary of the cutouts 71, 72a, and 72b includes a thin portion or a gradually thinning portion, the width of the cut portions 71, 72a and 72b is increased. Even if it is narrowed, the slope of the electric field is gentle, and the liquid crystal molecules positioned in this portion are easily inclined in either direction to form domains.

One set of cutouts 71, 72a, 72b, 91, 92a, and 92b divides the pixel electrode 191 into a plurality of sub-areas having two inclined peripheries, respectively. The inclination direction of the liquid crystal molecules is determined by the direction determined by the horizontal component of the electric field, and the inclination direction is approximately four directions. As described above, when the liquid crystal molecules are inclined in various directions, the reference viewing angle of the liquid crystal display is increased.

The shape and arrangement of the incisions 71, 72a, 72b, 91, 92a, 92b can be modified.

Next, a method of manufacturing the color filter display panel illustrated in FIGS. 3 and 4 according to an exemplary embodiment of the present invention will be described with reference to FIGS. 5A to 5D.

5A through 5D are cross-sectional views sequentially illustrating a method of manufacturing a color filter display panel according to an exemplary embodiment of the present invention.

First, as shown in FIG. 5A, the light blocking member 220 is formed by depositing chromium or the like on the substrate 210 and patterning the same.

Then, as shown in Figure 5b, a photosensitive resin containing a pigment is applied by a spin coating method or the like. In addition, the photosensitive resin is exposed and developed, and then hard baked to form the color filter 230. The pigment may be any one of red, green, and blue, and the process of FIG. 5B is repeated for each color.

Thereafter, an overcoat 250 is formed on the color filter 230.

Next, as shown in FIG. 5C, the common electrode 270 is formed by depositing ITO, IZO, or the like on the substrate 210 by a sputtering method. Then, a photoresist film having first and second portions 52 and 54 having different thicknesses is formed on the common electrode 270. Various methods may be used to change the thickness of the photoresist layers 52 and 54. For example, a translucent area may be provided in the photomask in addition to a light transmitting area and a light blocking area. There is a way. The translucent region is provided with a slit pattern, a lattice pattern, or a thin film having a medium transmittance or a medium thickness. When using the slit pattern, it is preferable that the width of the slits and the interval between the slits are smaller than the resolution of the exposure machine used for the photographic process. Another example is to use a photoresist film that can be reflowed. In other words, a thin film is formed by forming a reflowable photoresist film using a conventional exposure mask having only a light transmitting area and a light blocking area, and then reflowing the film to flow down to an area where no photoresist remains.

Thereafter, the common electrodes 270 are wet-etched using the photoresist layers 52 and 56 as masks to form the cutouts 71, 72a and 72b.

Next, as illustrated in FIG. 5D, a portion of the common electrode 270 is exposed by removing the first portion 52 of the photosensitive film by dry etching. At this time, the thickness of the second portion 54 is reduced.

Then, the exposed portion of the common electrode 270 is dry etched to remove a portion of the upper portion. At this time, since the ITO residues remaining in the cutouts 71, 72a and 72b are removed, the width of the cutouts 71, 72a and 72b may be narrower than in the related art.

Next, a liquid crystal display according to another exemplary embodiment of the present invention will be described in detail with reference to FIGS. 6 and 7.

6 is a layout view of a liquid crystal display according to another exemplary embodiment. FIG. 7 is a cross-sectional view of the liquid crystal display of FIG. 6 taken along the line VII-VII′-VII ″.

6 and 7, the liquid crystal display according to the present exemplary embodiment includes a thin film transistor array panel 100 and a common electrode panel 200 facing each other and a liquid crystal layer 3 interposed therebetween. .

The layered structures of the display panels 100 and 200 according to the present embodiment are generally the same as those shown in FIGS. 1 to 4.

Referring to the thin film transistor array panel 100, a plurality of gate lines 121 including the gate electrode 124 and the end portion 129, the sustain electrodes 133a to 133d, and the connection portion 133e are disposed on the substrate 110. A plurality of storage electrode lines 131 including a plurality of linear ohmic contacts including a gate insulating layer 140, a plurality of linear semiconductors 151 including a protrusion 154, and a protrusion 163 thereon. The member 161 and the plurality of island resistive contact members 165 are sequentially formed. A plurality of data lines 171 including a source electrode 173 and an end portion 179, a plurality of drain electrodes 175, and a plurality of isolated metal pieces 178 are formed on the ohmic contacts 161 and 165. The passivation layer 180 is formed thereon. A plurality of contact holes 181, 182, 183a, 183b, and 185 are formed in the passivation layer 180 and the gate insulating layer 140, and the plurality of pixel electrodes 191 and the plurality of pixel electrodes 191 and 92b formed thereon. Contact auxiliary members 81 and 82 and a plurality of connecting legs 83 are formed. An alignment layer 11 is formed on the pixel electrode 191, the contact assistants 81 and 82, the connection legs 83, and the passivation layer 180.

Referring to the common electrode display panel 200, the light blocking member 220 having the plurality of openings 225, the plurality of color filters 230, the common electrode 270, and the alignment layer 21 are disposed on the insulating substrate 210. Formed.

However, unlike the liquid crystal display device illustrated in FIGS. 1 to 4, in the liquid crystal display device according to the present exemplary embodiment, the linear semiconductor 151 may include the data line 171, the drain electrode 175, and the ohmic contact member 161 below. 165 has substantially the same planar shape. However, the protrusion 154 of the linear semiconductor 151 has a portion exposed between the data line 171 and the drain electrode 175 such as between the source electrode 173 and the drain electrode 175.

In addition, the thin film transistor array panel 100 according to the present exemplary embodiment is disposed under a metal piece 178 and has a plurality of island-like semiconductors (not shown) having substantially the same planar shape as the metal piece 178 and a plurality of resistive structures disposed thereon. Contact members (not shown).

In the method of manufacturing the thin film transistor according to the exemplary embodiment of the present invention, the data line 171, the drain electrode 175, the metal piece 178, the semiconductor 151, and the ohmic contacts 161 and 165 are photographed once. Form by process.

The photoresist film used in the photolithography process is formed as shown in FIG. 5D and varies in thickness depending on the position, and includes the first portion and the second portion in order of decreasing thickness. The first portion is positioned in the wiring region occupied by the data line 171, the drain electrode 175, and the metal piece 178, and the second portion is positioned in the channel region of the thin film transistor.

In this way, a one-time photographic process can be reduced, thereby simplifying the manufacturing method.

Many features of the liquid crystal display shown in FIGS. 1 to 4 may correspond to the liquid crystal display shown in FIGS. 6 and 7.

Next, a liquid crystal display according to another exemplary embodiment of the present invention will be described in detail with reference to FIGS. 8 and 9.

FIG. 8 is a layout view of a liquid crystal display according to another exemplary embodiment. FIG. 9 is a cross-sectional view of the liquid crystal display of FIG. 8 taken along the line IX-IX′-IX ″.

As shown in Figs. 8 and 9, the layer structure of the thin film transistor array panel according to the present embodiment is almost the same as that shown in Figs.

Referring to the thin film transistor array panel 100, the plurality of gate lines 121 including the gate electrode 124 and the end portion 129, the storage electrodes 133a to 133d, and the connecting portion 133e are disposed on the substrate 110. A plurality of storage electrode lines 131 including a plurality of linear ohmic contacts including a gate insulating layer 140, a plurality of linear semiconductors 151 including a protrusion 154, and a protrusion 163 thereon. The member 161 and the plurality of island resistive contact members 165 are sequentially formed. A plurality of data lines 171 including a source electrode 173 and an end portion 179, a plurality of drain electrodes 175, and a plurality of isolated metal pieces 178 are formed on the ohmic contacts 161 and 165. The passivation layer 180 is formed thereon. A plurality of contact holes 181, 182, 183a, 183b, and 185 are formed in the passivation layer 180 and the gate insulating layer 140, and the plurality of pixel electrodes 191 and the plurality of pixel electrodes 191 and 92b formed thereon. Contact auxiliary members 81 and 82 and a plurality of connecting legs 83 are formed. An alignment layer 11 is formed on the pixel electrode 191, the contact assistants 81 and 82, the connection legs 83, and the passivation layer 180.

However, unlike the liquid crystal display shown in FIGS. 1 to 4, the liquid crystal display according to the present embodiment further includes a shielding electrode 88. The shielding electrode 88 receives a common voltage, and includes a vertical portion extending along the data line 171 and a horizontal portion extending along the gate line 121. The vertical portion completely covers the data line 171, and the horizontal portion connects the adjacent vertical portions and is located inside the boundary line of the gate line 121. The shielding electrode 88 blocks an electric field formed between the data line 171 and the pixel electrode 191 and between the data line 171 and the common electrode 270 to prevent voltage distortion and a data line of the pixel electrode 191. Reduce the signal delay of the data voltage delivered by (171).

Many features of the liquid crystal display shown in FIGS. 1 to 4 may correspond to the liquid crystal display shown in FIG. 10.

As described above, in the exemplary embodiment of the present invention, when a step is formed at the edge of the cutout of the common electrode, the texture generated at the cutout is reduced and the aperture ratio of the pixel is improved, thereby providing a high-quality liquid crystal display device.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Claims (12)

First substrate, A first field generating electrode formed on the first substrate and having an incision; A second substrate facing the first substrate, A second field generating electrode formed on the second substrate and having an incision; and A liquid crystal layer positioned between the first field generating electrode and the second field generating electrode Including; The portion of the first field generating electrode positioned at the boundary of the cutout is thinner than the other portion of the first field generating electrode. In claim 1, The boundary of the cutout is a stepped liquid crystal display device. In claim 1, The first field generating electrode becomes thinner gradually as it is adjacent to the boundary line of the cutout. In claim 1, The cutout of the first field generating electrode and the cutout of the second field generating electrode are alternately arranged. In claim 1, And a first field generating electrode two to three times thicker than the second field generating electrode. In claim 1, The cutout width of the first field generating electrode is 9 to 10㎛. In claim 1, The thickness of the thin portion is a liquid crystal display device of 200 ~ 300 200. In claim 1, And a color filter formed on the first substrate. In claim 1, And a thin film transistor formed on the second substrate and connected to the second field generating electrode. Forming a light blocking member on the substrate, Forming a color filter on the light blocking member; Forming an overcoat on the color filter; Forming a common electrode on the overcoat; Forming a photosensitive film having a first portion and a second portion thicker than the first portion on the common electrode; Etching the common electrode using the photosensitive film as a mask to form an incision; and Removing the first portion and removing a portion of an upper portion of the common electrode exposing the second portion as a mask; Method of manufacturing a color filter display panel comprising a. In claim 10, Removing a part of the upper part of the common electrode A method of manufacturing a color filter display panel, which proceeds until the common electrode remains at a thickness of 200 to 300 Hz. In claim 10, In the step of forming the photosensitive film, The thickness of the photosensitive film is formed using a slit, a semi-transparent film or by using a reflow method of the color filter display panel.

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