KR20070000635A - Liquid crystal display and manufacturing method thereof - Google Patents

Abstract

An LCD and a method for manufacturing the same are provided to planarize a common electrode on color filters, thereby preventing the leakage of light due to error arrangement of liquid crystal molecules, by overlapping neighboring color filters. A light shielding member(220) is formed above a substrate(210), wherein the light shielding member includes a plurality of linear parts for defining openings. A plurality of color filters(230) are positioned above the substrate, and have flat surfaces. The color filter has a first portion thicker than the light shielding member and a second portion thinner than the first portion. The second portion of the color filter crosses at least one of the linear parts of the light shielding member. A common electrode(271) is formed on the color filters, and contacted with the color filters.

Description

Liquid crystal display device and its manufacturing method {LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF}

1 is a layout view of a liquid crystal display according to an exemplary embodiment of the present invention.

FIG. 2 is a layout view of a thin film transistor array panel for the liquid crystal display of FIG. 1;

FIG. 3 is a layout view of a common electrode panel for the liquid crystal display of FIG. 1;

FIG. 4 is a cross-sectional view of the liquid crystal display of FIG. 1 taken along the line IV-IV ''-IV ''-IV '' '-IV' '' ',

5 is a cross-sectional view of the liquid crystal display of FIG. 1 taken along the line V-V;

6A, 7A, 8A, 9A, 10A, and 11A are cross-sectional views sequentially illustrating a method of manufacturing the common electrode display panel of FIG. 4.

6B, 7B, 8B, 9B, 10B, and 11B are cross-sectional views sequentially illustrating a method of manufacturing the common electrode display panel of FIG. 5.

The present invention relates to a liquid crystal display device and a manufacturing method thereof.

The liquid crystal display is one of the most widely used flat panel display devices. The liquid crystal display includes an electric field generating electrode for generating an electric field such as a pixel electrode and a common electrode, and a liquid crystal layer filled in the gap between the display panel and the display panel having a gap therebetween. It includes. In such a liquid crystal display, an electric field is formed on the liquid crystal layer by applying a voltage to two electric field generating electrodes to determine the alignment of liquid crystal molecules and to adjust the polarization of incident light to display an image.

The liquid crystal display includes a plurality of pixels including an electric field generating electrode and a thin film transistor connected thereto and arranged in a matrix, and a plurality of signal lines transferring signals thereto. The signal line includes a gate line for transmitting a scan signal and a data line for transmitting a data signal. Each pixel includes a color filter for displaying colors in addition to an electric field generating electrode and a thin film transistor. Color filters include red, green, and blue.

The gate line, the data line, the pixel electrode, and the thin film transistor are disposed on one of the two display panels, and this display panel is commonly referred to as a thin film transistor display panel. The other display panel is generally provided with a common electrode and a color filter. The display panel is generally called a common electrode display panel, and a liquid crystal layer exists between the thin film transistor array panel and the common electrode display panel. In addition, the liquid crystal display includes a light blocking member that blocks light leakage between pixel electrodes.

The light blocking member is usually located under the color filter, but when the light blocking member is made of a thick organic material, a step may occur in the color filter. As a result, the arrangement of the liquid crystal molecules may be changed to leak light, and the quality of the liquid crystal display may be degraded.

In order to solve this problem, conventionally, an overcoat is applied on the color filter to planarize it. However, in this case, the process of the liquid crystal display is complicated, so that the yield of the product may be lowered and the cost may increase.

Therefore, the technical problem to be achieved by the present invention is to simplify the manufacturing process of the liquid crystal display and to improve the image quality of the liquid crystal display.

In order to solve the above problems, a liquid crystal display and a method of manufacturing the same according to the present invention include a substrate, a light blocking member formed on the substrate and including a plurality of linear portions defining an opening, and positioned on the substrate and thicker than the light blocking member. A plurality of color filters covering a first portion and at least one linear portion of the light blocking member and having a second portion thinner than the first portion, each having a flat surface, and formed on the color filter; And a field generating electrode in contact with the.

The thickness of the first portion of the color filter may be 3 μm to 5 μm.

The light blocking member may have a thickness of 1.2 μm to 1.5 μm, and the light blocking member may include an organic material.

Adjacent color filters may overlap each other.

The field generating electrode may be transparent and have an incision.

Forming a light blocking member on a substrate, applying a photosensitive thin film for color filters having a thickness of 3 μm to 5 μm on the substrate and the light blocking member, and patterning the color filter thin film on the substrate and the light blocking member. And forming a color filter having a different thickness, and forming an electric field generating electrode directly on the color filter.

The color filter thin film may include 4 to 20 wt% pigment, 25 to 50 wt% polymer, 25 to 50 wt% crosslinking agent, surfactant, and 15 wt% or less photopolymerization initiator. have.

In the color filter forming step, a mask having a different light transmittance may be used according to a position.

The light blocking member may have a thickness of 1.2 μm to 1.5 μm, and the light blocking member may include an organic material.

The color filter thin film may be about 2000 μs high in a portion above the light blocking member.

The field generating electrode may have a cutout.

DETAILED DESCRIPTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

Next, the structure of the liquid crystal display according to the exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 to 5.

1 is a layout view of a liquid crystal display according to an exemplary embodiment of the present invention, FIG. 2 is a layout view of a thin film transistor array panel for the liquid crystal display of FIG. 1, and FIG. 3 is a common electrode display panel for the liquid crystal display of FIG. 1. 4 is a cross-sectional view of the liquid crystal display of FIG. 1 taken along the line IV-IV'-IV ''-IV '' '-IV' '' ', and FIG. 5 is a liquid crystal display of FIG. It is sectional drawing which cut | disconnected the apparatus along the VV line.

1 to 5, the liquid crystal display according to the present exemplary embodiment includes a thin film transistor array panel 100, a common electrode panel 200, and a liquid crystal layer 3 interposed therebetween.

First, the thin film transistor array panel 100 will be described with reference to FIGS. 1, 2, 4, and 5.

A plurality of gate lines 121 and a plurality of storage electrode lines 131 are formed on an insulating substrate 110 made of transparent glass or plastic.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction. Each gate line 121 includes a plurality of gate electrodes 124 protruding up and down, and end portions 129 having a large area for connection with other layers or driving circuits. A gate driving circuit (not shown) for generating a gate signal may be mounted on a flexible printed circuit film (not shown) attached to the substrate 110 or directly mounted on the substrate 110, It may be integrated into the substrate 110. When the gate driving circuit is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The storage electrode line 131 receives a predetermined voltage, and connects a stem line extending substantially parallel to the gate line 121, a plurality of sets of storage electrodes 133a, 133b, 133c, and 133d and a plurality of connections 133e. Include. Each of the storage electrode lines 131 is positioned between two adjacent gate lines 121, and the stem line is closer to the upper side of the two gate lines 121.

Each of the storage electrode sets 133a to 133d extends in the vertical direction and extends in an oblique direction with the first and second storage electrodes 133a and 133b which are separated from each other, and the first storage electrode 133a and the second storage electrode. Third and fourth sustain electrodes 133c and 133d connecting the 133b to each other are included.

The first storage electrode 133a is positioned opposite to the fixed end connected to the stem line, and the protrusion electrode has the free end.

The third and fourth sustain electrodes 133c and 133d are respectively connected to both ends of the second sustain electrode 133b starting near the center of the first sustain electrode 133a. The third and fourth sustain electrodes 133c and 133d have inverted symmetry with respect to the center line between two adjacent gate lines 121. The connection part 133e connects the adjacent first storage electrode 133a and the second storage electrode 133b of the adjacent storage electrode sets 133a to 133d.

Aluminum-based metals such as aluminum (Al) and aluminum alloys, silver-based metals such as silver (Ag) and silver alloys, copper-based metals such as copper (Cu) and copper alloys, and molybdenum-based metals such as molybdenum (Mo) and molybdenum alloys, and chromium ( Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties. One of the conductive films is made of a metal having low resistivity, such as aluminum-based metal, silver-based metal, or copper-based metal, so as to reduce signal delay or voltage drop. In contrast, other conductive films are made of other materials, particularly materials having excellent physical, chemical, and electrical contact properties with indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum-based metals, chromium, tantalum, and titanium. Good examples of such a combination include a chromium bottom film, an aluminum (alloy) top film, and an aluminum (alloy) bottom film and a molybdenum (alloy) top film. However, the gate line 121 and the storage electrode line 131 may be made of various other metals or conductors.

Side surfaces of the gate line 121 and the storage electrode line 131 are inclined with respect to the surface of the substrate 110, and the inclination angle is preferably about 30 ° to about 80 °.

A gate insulating layer 140 made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed on the gate line 121 and the storage electrode line 131.

On the gate insulating layer 140, a plurality of linear semiconductors 151 made of hydrogenated amorphous silicon (amorphous silicon is abbreviated a-Si), polycrystalline silicon, or the like are formed. The linear semiconductor 151 mainly extends in the vertical direction and includes a plurality of protrusions 154 extending toward the gate electrode 124. The linear semiconductor 151 has a wider width in the vicinity of the gate line 121 and the storage electrode line 131 and covers them widely.

A plurality of linear and island ohmic contacts 161 and 165 are formed on the semiconductor 151. The ohmic contacts 161 and 165 may be made of a material such as n + hydrogenated amorphous silicon in which n-type impurities such as phosphorus are heavily doped, or may be made of silicide. The linear ohmic contact 161 has a plurality of protrusions 163, and the protrusion 163 and the island-type ohmic contact 165 are paired and disposed on the protrusion 154 of the semiconductor 151.

Side surfaces of the semiconductor 151 and the ohmic contacts 161, 163, and 165 may also be inclined with respect to the surface of the substrate 110, and the inclination angle may be about 30 ° to 80 °.

A plurality of data lines 171, a plurality of drain electrodes 175, and a plurality of isolated metal pieces 178 are disposed on the ohmic contacts 161, 163, 165 and the gate insulating layer 140. ) Is formed.

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121. Each data line 171 also crosses the storage electrode line 131 and the connecting portion 133e. Each data line 171 includes a plurality of source electrodes 173 extending toward the gate electrode 124 and a wide end portion 179 for connection with another layer or an external device. It may be mounted on a data driving circuit (not shown) that generates a data signal, mounted directly on the substrate 110, or integrated on the substrate 110. When the data driving circuit is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The drain electrode 175 is separated from the data line 171 and faces the source electrode 173 with respect to the gate electrode 124. Each drain electrode 175 has one end portion having a large area and the other end portion having a rod shape. The wide end is partially surrounded by the bent source electrode 173.

One gate electrode 124, one source electrode 173, and one drain electrode 175 together with the protrusion 154 of the semiconductor 151 form one thin film transistor (TFT). A channel of the transistor is formed in the protrusion 154 between the source electrode 173 and the drain electrode 175.

The metal piece 178 is positioned on the gate line 121 near the fixed end of the sustain electrode 133a.

The data line 171, the drain electrode 175, and the metal piece 178 are preferably made of a refractory metal such as molybdenum, chromium, tantalum, and titanium, or an alloy thereof, and a refractory metal film (not shown). And a low resistance conductive film (not shown). Examples of the multilayer structure include a double layer of chromium or molybdenum (alloy) lower layer and an aluminum (alloy) upper layer, and a triple layer of molybdenum (alloy) lower layer, aluminum (alloy) interlayer and molybdenum (alloy) upper layer. However, the data line 171, the drain electrode 175, and the metal piece 178 may be made of various other metals or conductors.

The data line 171, the drain electrode 175, and the metal piece 178 may also be inclined at an inclination angle of about 30 ° to 80 ° with respect to the surface of the substrate 110.

The ohmic contacts 161, 163, and 165 exist only between the semiconductors 151 and 154 below and the data line 171 and the drain electrode 175 thereon, thereby lowering the contact resistance. In most places, the width of the linear semiconductor 151 is smaller than the width of the data line 171. However, as described above, the width of the linear semiconductor 151 is widened at the portion where it meets the gate line 121 to smooth the profile of the surface. Prevents disconnection. The semiconductors 151 and 154 have portions exposed between the source electrode 173 and the drain electrode 175 and not covered by the data line 171 and the drain electrode 175.

A passivation layer 180 is formed on the data line 171, the drain electrode 175, the metal piece 178, and the exposed portion of the semiconductor 151. The passivation layer 180 may be made of an inorganic insulator or an organic insulator, and may have a flat surface. Examples of the inorganic insulator include silicon nitride and silicon oxide. The organic insulator may have photosensitivity and the dielectric constant is preferably about 4.0 or less. However, the passivation layer 180 may have a double layer structure of the lower inorganic layer and the upper organic layer so as not to damage the exposed portion of the semiconductor 151 while maintaining excellent insulating properties of the organic layer.

In the passivation layer 180, a plurality of contact holes 182 and 185 exposing the end portion 179 and the drain electrode 175 of the data line 171 are formed, respectively, and the passivation layer 180 and the gate insulating layer are formed. In the 140, a plurality of contact holes 181 exposing the end portion 129 of the gate line 121 and a plurality of contact holes 183a exposing a part of the storage electrode line 131 near the fixed end of the first storage electrode 133a. And a plurality of contact holes 183b exposing the protruding portion of the free end of the first storage electrode 133a.

A plurality of pixel electrodes 191, a plurality of contact assistants 81 and 82, and a plurality of overpasses 83 are formed on the passivation layer 180. These may be made of at least one of a transparent conductive material such as ITO or IZO or a metal having excellent reflectivity of aluminum or silver alloy.

The pixel electrode 191 is physically and electrically connected to the drain electrode 175 through the contact hole 185 to receive a data voltage from the drain electrode 175. The pixel electrode 191 to which the data voltage is applied determines the direction of the liquid crystal molecules 31 of the liquid crystal layer 3 by generating an electric field together with the common electrode 271. The pixel electrode 191 and the common electrode 271 form a capacitor (hereinafter, referred to as a "liquid crystal capacitor") to maintain an applied voltage even after the thin film transistor is turned off.

The pixel electrode 191 overlaps the storage electrode line 131 including the storage electrodes 133a, 133b, 133c, and 133d, and the pixel electrode 191 and the drain electrode 175 electrically connected thereto are connected to the storage electrode line 131. The overlapping capacitor is called a storage capacitor, which strengthens the voltage holding capability of the liquid crystal capacitor.

Each pixel electrode 191 has a substantially rectangular shape in which the left corner is chamfered, and the chamfered hypotenuse forms an angle of about 45 ° with respect to the gate line 121.

The center electrode 91, the lower cutout 92a, and the upper cutout 92b are formed in the pixel electrode 191, and the pixel electrode 191 includes a plurality of cutouts 91, 92a, and 92b. It is divided into partitions. The cutouts 91, 92a and 92b are almost inverted symmetric with respect to an imaginary transverse centerline that bisects the pixel electrode 191.

The lower and upper cutouts 92a and 92b extend obliquely from the right side to the left side of the pixel electrode 191 and overlap the third and fourth sustain electrodes 133c and 133d. The lower and upper cutouts 92a and 92b are positioned at the lower half and the upper half with respect to the horizontal center line of the pixel electrode 191, respectively. The lower and upper cutouts 92a and 92b extend perpendicular to each other at an angle of about 45 ° with respect to the gate line 121.

The central cutout 91 extends along the horizontal centerline of the pixel electrode 191 and has an inlet at the right side thereof. The inlet of the central incision 91 has a pair of hypotenuses substantially parallel to the lower incision 92a and the upper incision 92b, respectively.

Accordingly, the lower half of the pixel electrode 191 is divided into two regions by the lower cutout 92a, and the upper half is also divided into two regions by the upper cutout 92b. In this case, the number of regions or the number of cutouts may vary according to design elements such as the size of the pixel electrode 191, the length ratio of the horizontal side and the vertical side of the pixel electrode 191, and the type or characteristics of the liquid crystal layer 3.

The contact auxiliary members 81 and 82 are connected to the end portion 129 of the gate line 121 and the end portion 179 of the data line 171 through the contact holes 181 and 182, respectively. The contact auxiliary members 81 and 82 compensate for and protect the adhesion between the end portions 179 and 129 of the data line 171 and the gate line 121 and the external device.

The connecting leg 83 crosses the gate line 121, and the exposed end of the free end of the first storage electrode 133a through the contact holes 183a and 183b positioned opposite to each other with the gate line 121 interposed therebetween. And the exposed portion of the storage electrode line 131. The connecting leg 83 may overlap the metal piece 178 and be electrically connected to the metal piece 178. The storage electrode lines 131 including the storage electrodes 133a to 133d may be used together with the connecting legs 83 and the metal pieces 178 to repair defects in the gate line 121, the data line 171, or the thin film transistor. . When the gate line 121 is repaired, the gate line 121 and the sustain electrode line 131 are formed by connecting the gate line 121 and the connecting leg 83 by laser irradiation at the intersection of the gate line 121 and the connecting leg 83. ) Is electrically connected. At this time, the metal piece 178 strengthens the electrical connection between the gate line 121 and the connecting leg 83.

Next, the common electrode display panel 200 will be described with reference to FIGS. 1, 3, 4, and 5.

A light blocking member 220 is formed on an insulating substrate 210 made of transparent glass, plastic, or the like. The light blocking member 220 is called a black matrix and prevents light leakage. The light blocking member 220 has a plurality of openings 225 facing the pixel electrode 191 and having substantially the same shape as the pixel electrode 191, and prevents light leakage between the pixel electrodes 191. However, the light blocking member 220 may include a portion corresponding to the gate line 121 and the data line 171 and a portion corresponding to the thin film transistor. In this case, the light blocking member 220 includes an organic material and its thickness t3 is about 1.2 μm to 1.5 μm.

A plurality of color filters 230 are formed on the substrate 210 and the light blocking member 220.

The color filter 230 covers an area surrounded by the light blocking member 220, extends in the vertical direction along the column of the pixel electrodes 191, and the neighboring color filter 230 overlaps the light blocking member 220. Each color filter 230 may display one of primary colors such as three primary colors of red, green, and blue. In the drawings, the red and green color filters are denoted by reference numerals 230R and 230G.

The thickness t1 of the portion between the light blocking members 220 of the color filter 230 is about 3 μm to 5 μm, which is thicker than the thickness t3 of the light blocking member 220, and the thickness t1 of the portion existing on the light blocking member 220. The thickness t2 is thinner than the thickness t1 of the portions existing between the light blocking members 220 and the surface of the color filter 230 is flat.

The common electrode 271 is formed directly on the color filter 230. The common electrode 271 is made of a transparent conductor such as ITO or IZO, and a plurality of cutouts 71, 72a, and 72b are formed in the common electrode 271.

One set of cutouts 71, 72a, and 72b includes a central cutout 71, a lower cutout 72a, and an upper cutout 72b facing one pixel electrode 191. Each of the cutouts 71, 72a, 72b is disposed between adjacent cutouts 91, 92a, 92b of the pixel electrode 191 or between the cutouts 91, 92a, 92b and the chamfered hypotenuse of the pixel electrode 191. It is arranged. In addition, each cutout 71, 72a, and 72b includes at least one diagonal line extending in parallel with the lower cutout 92a or the upper cutout 92b of the pixel electrode 191. The cutouts 71-72b are almost inverted symmetric with respect to the horizontal center line of the pixel electrode 191.

The lower and upper cutouts 72a and 72b each include an oblique section, a horizontal section and a vertical section. The oblique line portion extends substantially parallel to the lower or upper cutouts 92a and 92b of the pixel electrode 191 from the upper side or the lower side of the pixel electrode 191 to the left side. The horizontal portion and the vertical portion extend along the sides of the pixel electrode 191 from each end of the diagonal portion and form an obtuse angle with the diagonal portion.

The central cutout 71 includes a central transverse portion, a pair of oblique portions and a pair of longitudinal longitudinal portions. The central horizontal portion extends from the left side of the pixel electrode 191 to the right along the horizontal center line of the pixel electrode 191, and the pair of diagonal portions respectively lower toward the right side of the pixel electrode 191 at the end of the central horizontal portion. And almost parallel with the upper incisions 72a, 72b. The vertical longitudinal portion extends along the right side of the pixel electrode 191 from each end of the diagonal portion and forms an obtuse angle with the diagonal portion.

The number of cutouts 71-72b may also vary according to design factors, and the light blocking member 220 may overlap light cutouts 71 to 75b to block light leakage near the cutouts 71 to 72b.

Meanwhile, as described above, since the surface of the color filter 230 is flat, the surface of the common electrode 271 having the cutouts 71-72b is also flat to prevent misalignment of liquid crystal molecules, thereby preventing light leakage. You can prevent it.

Alignment layers 11 and 21 are coated on inner surfaces of the display panels 100 and 200, and they may be vertical alignment layers. Polarizers 12 and 22 are provided on the outer surfaces of the display panels 100 and 200, and the polarization axes of the two polarizers 12 and 22 are orthogonal and one of the polarization axes is parallel to the gate line 121. desirable. In the case of a reflective liquid crystal display, one of the two polarizers 12 and 22 may be omitted.

The liquid crystal display according to the present exemplary embodiment may further include a phase retardation film (not shown) for compensating for the delay of the liquid crystal layer 3. The liquid crystal display may also include a polarizer 12 and 22, a phase retardation film, display panels 100 and 200, and a backlight unit (not shown) for supplying light to the liquid crystal layer 3.

The liquid crystal layer 3 has negative dielectric anisotropy, and the liquid crystal molecules 31 of the liquid crystal layer 3 are aligned such that their major axes are perpendicular to the surfaces of the two display panels 100 and 200 in the absence of an electric field. . Therefore, incident light does not pass through the quadrature polarizers 12 and 22 and is blocked.

When a common voltage is applied to the common electrode 271 and a data voltage is applied to the pixel electrode 191, an electric field substantially perpendicular to the surfaces of the display panels 100 and 200 is generated. The liquid crystal molecules 31 change their direction in response to the electric field such that their major axis is perpendicular to the direction of the electric field. From now on, the pixel electrode 191 and the common electrode 271 will be referred to as an electric field generating electrode.

The cutouts 71-72b and 91-92b of the field generating electrodes 191 and 271 and the sides of the pixel electrode 191 distort the electric field to create horizontal components that determine the inclination direction of the liquid crystal molecules 31. The horizontal component of the electric field is substantially perpendicular to the sides of the cutouts 71-72b and 91-92b and the sides of the pixel electrode 191.

Referring to FIG. 3, one set of cutouts 71-72b and 91-92b divides the pixel electrode 191 into a plurality of sub-areas, and each sub-region is a main portion of the pixel electrode 191. It has two major edges forming an oblique angle with the sides. Most of the liquid crystal molecules on each subregion are inclined in a direction perpendicular to the periphery thereof, and thus, the inclination directions are approximately four directions. As described above, when the liquid crystal molecules 31 are inclined in various directions, the reference viewing angle of the liquid crystal display becomes large.

At least one cutout 71-72b, 91-92b may be replaced by a protrusion (not shown) or depression (not shown). The protrusions may be made of organic or inorganic materials and may be disposed above or below the field generating electrodes 191 and 271.

The shape and arrangement of the incisions 71-72b and 91-92b can be modified.

Next, a method of manufacturing the common electrode panel for the liquid crystal display device illustrated in FIGS. 1 to 5 according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 6A to 11B.

6A, 6B, 7A, 7B, 8A, 8B, 9A, 9B, 10A, 10B, 11A and 11B are fabricated of the common electrode display panel shown in FIGS. 1 to 5. A cross section showing the method in turn.

First, as illustrated in FIGS. 6A and 6B, the light blocking member 220 is formed on the upper substrate 210 made of transparent glass or plastic. The light blocking member 220 includes an organic material and has a thickness of about 1.2 μm to 1.5 μm.

Next, as shown in FIGS. 7A and 7B, a red color filter thin film 235 including a negative photoresist organic material is coated on and coated on the upper substrate 210 and the light blocking member 220. The photo mask 40 is aligned. At this time, the organic material for the red color filter is a chemical resistant material, about 4 to 20% by weight of the red pigment, about 25 to 50% by weight of the polymer (polymer) and about 25 to 50% by weight of the crosslinking agent, tens of ppm interface Surfactant, up to 15% by weight of a photoinitiator. The thickness of the thin film 235 is about 3 μm to 5 μm, and the upper surface of the portion positioned on the light blocking member 220 is higher than the other portion, and the height difference is about 2000 mm or less.

The photomask 40 includes a transparent substrate 41 and an opaque light blocking layer 42 thereon, and is divided into a light transmissive area TA1, a light shielding area BA1, and a transflective area SA1. The light blocking layer 42 is not present in the light transmitting area TA1 but is present only in the light blocking area BA1 and the transflective area SA1. The light blocking layer 62 includes a plurality of portions forming a slit having a width greater than or equal to a predetermined value in the light shielding area BA1 and a width or interval less than or equal to a predetermined value in the transflective area BA1. In this case, the light blocking layer 42 in the transflective area SA1 includes a plurality of portions forming a slit in which the interval is changed, and the interval between the slit becomes narrower as it approaches the light blocking area BA1.

When the light is irradiated onto the red color filter thin film 235 through the photomask 40 and developed, the portion exposed to light over a certain intensity disappears. In FIG. 7A and FIG. Indicates a portion of the red color filter 230R.

That is, all of the portions facing the light blocking area BA1 are removed, and the portions facing the light transmitting area TA remain as they are, and the portions facing the transflective area SA do not have an upper portion, so A red color filter 230R having a flat surface in correspondence with the facing portion and its height is formed as in FIGS. 8A and 8B. An edge of the red color filter 230R is positioned on the light blocking member 220.

9A and 9B, a thin film for green color filter 236 containing negative photosensitive organic material is applied and the photomask 40 is aligned. The photomask 40 uses the mask used to form the red color filter 230R as it is, but moves in the horizontal direction to align the mask.

The green color filter thin film 236 also has a thickness of about 3 μm to 5 μm, similar to the red color filter thin film 235, about 4-20 wt% of the green pigment, about 25-50% of the polymer, and about 25 to 50 wt% crosslinking agent.

After irradiating light onto the green color filter thin film 236 through the photomask 40, the green color filter 230G is formed as shown in FIGS. 10A and 10B. In this case, an edge of the green color filter 230G partially overlaps the red color filter 230R on the light blocking member 220, and the green color filter 230G has a flat surface that matches the height of the red color filter 230R. Have

In a similar manner, a blue color filter (not shown) having the same height as the red and green color filters 230R and 230G is also formed. Therefore, light leakage can be prevented by preventing misalignment of the liquid crystal molecules due to the step difference.

Next, as shown in FIGS. 11A and 11B, a transparent conductor such as ITO or IZO is stacked on the color filter 230 and photo-etched to form a common electrode 271 having cutouts 71 and 72b. Form.

On the other hand, as described above, since the color filter 230 has a strong chemical resistance, the color filter 230 is flat and hardly damaged by an etchant or a photoresist remover used in an etching process for making the cutouts 71 and 72b of the common electrode 271. Keep the surface intact.

As such, since the surface of the common electrode 271 in contact with the color filter 230 is also made flat, an overcoat (not shown) is formed on the color filter 230 that has been conventionally performed to prevent misalignment of liquid crystal molecules. By omitting the process, the cost can be reduced by simplifying the process.

The present invention can also be applied to a color filter on array (COA) structure in which the color filter 230 is disposed above or below the pixel electrode 191 of the thin film transistor array panel 100.

The present invention can also be applied to a liquid crystal display device in which the cutouts 71 and 72b are not provided in the pixel electrode 191 or the common electrode 271.

According to the present invention, by overlapping the neighboring color filter, and by using a color filter with a strong chemical resistance to prevent the step caused by the light-shielding member including the organic material so that the common electrode almost has a flat surface without a separate thin film process As a result, light leakage due to misalignment of the liquid crystal molecules may be prevented, thereby improving image quality of the liquid crystal display.

In addition, it is possible to simplify the manufacturing process of the liquid crystal display and reduce the cost.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Claims (13)

Board, A light blocking member formed on the substrate and including a plurality of linear portions defining an opening; A plurality of color filters positioned on the substrate and covering a first portion thicker than the light blocking member and covering at least one linear portion of the light blocking member and each having a second portion thinner than the first portion and having a flat surface; and An electric field generating electrode formed on the color filter and in contact with the color filter Color filter display panel comprising a. In claim 1, The thickness of the first portion of the color filter is 3μm to 5μm color filter display panel. In claim 1, The light blocking member has a thickness of 1.2 μm to 1.5 μm. In claim 1, The light blocking member includes an organic material. In claim 1, Adjacent color filters overlap each other. In claim 1, The field generating electrode is transparent and has a cutout. Forming a light blocking member on the substrate, Applying a photosensitive thin film for a color filter having a thickness of 3 μm to 5 μm on the substrate and the light blocking member; Patterning the color filter thin film to form a color filter having a different thickness depending on a position on the substrate and the light blocking member; and Forming an electric field generating electrode directly on the color filter Method of manufacturing a color filter display panel for a display device comprising a. In claim 7, The color filter thin film may include 4 to 20 wt% pigment, 25 to 50 wt% polymer, 25 to 50 wt% crosslinking agent, surfactant, and 15 wt% or less photopolymerization initiator. The manufacturing method of the color filter display panel for devices. In claim 7, The color filter forming step is a manufacturing method of a color filter display panel for a display device using a mask having a different light transmittance depending on the position. In claim 7, The thickness of the said light shielding member is a manufacturing method of the color filter display panel for display devices of 1.2 micrometers-1.5 micrometers. In claim 10, The light blocking member is a manufacturing method of a color filter display panel for a display device containing an organic material. In claim 7, The color filter thin film is a method of manufacturing a color filter display panel for a display device having a height of about 2000 kHz at a portion above the light blocking member. In claim 7, And the field generating electrode has a cutout.

Images