KR20060047183A - Liquid crystal dispaly - Google Patents

Abstract

The liquid crystal display according to the present invention is formed on an insulating substrate and includes a gate line and a data line defining a pixel region, a thin film transistor connected to the gate line and the data line, a protective film covering the thin film transistor and having a plurality of protrusions, and a protective film. And a pixel electrode formed thereon and electrically connected to the thin film transistor, the pixel electrode having a curved portion along the protrusion.

Cutout, common electrode, protrusion, thin film transistor, domain

Description

Liquid crystal display {LIQUID CRYSTAL DISPALY}

1 is a layout view of a thin film transistor array panel for a liquid crystal display according to an exemplary embodiment of the present invention.

2 is a layout view of a common electrode display panel for a liquid crystal display according to an exemplary embodiment of the present invention.

3 is a layout view of a liquid crystal display according to an exemplary embodiment of the present invention including the two display panels of FIGS. 1 and 2.

4 is a cross-sectional view of the liquid crystal display of FIG. 3 taken along the line IV-IV '.

FIG. 5 is a cross-sectional view taken along the line VV ′ of FIG. 3.

6 is a layout view of a thin film transistor array panel for a liquid crystal display according to an exemplary embodiment of the present invention.

FIG. 7 is a cross-sectional view taken along the line VII-VII ′ of FIG. 6.

8 is a cross-sectional view schematically illustrating an equipotential line of a liquid crystal display according to an exemplary embodiment of the present invention.

9 is a layout view of a liquid crystal display according to an exemplary embodiment of the present invention.

FIG. 10 is a cross-sectional view taken along the line X-X 'of FIG. 9.

FIG. 11 is a cross-sectional view taken along the line XI-XI ′ of FIG. 9.

12 is a cross-sectional view illustrating a structure of a liquid crystal display according to an exemplary embodiment of the present invention, and is taken along the line VV ′ of FIG. 3.

* Description of the drawing symbols *

110 and 210: insulating substrate 121: gate line

140: gate insulating film 151: semiconductor

161, 165: ohmic contact member

171: data line 175: drain electrode

220: light blocking member 230R, 230G, 230B: color filter

270: common electrode 93, 94a, 94b: protrusion

91, 92a, 92b, 271, 272, 273: incision

The present invention relates to a display panel and a liquid crystal display including the same, and more particularly, to a display panel having a plurality of domain dividing means for obtaining a wide viewing angle and a liquid crystal display including the same.

The liquid crystal display is one of the most widely used flat panel display devices. The liquid crystal display includes two display panels on which field generating electrodes such as a pixel electrode and a common electrode are formed, and a liquid crystal layer interposed therebetween. Is applied to generate an electric field in the liquid crystal layer, thereby determining the orientation of liquid crystal molecules in the liquid crystal layer and controlling the polarization of incident light to display an image.

Among them, the vertical alignment mode liquid crystal display in which the long axis of the liquid crystal molecules are arranged perpendicular to the upper and lower display panels without an electric field applied to the display panel is high in contrast ratio and easy to implement a wide viewing angle.

As a means for implementing a wide viewing angle in a vertical alignment mode liquid crystal display, there is a method of forming an incision in the field generating electrode, and the incision may determine a direction in which the liquid crystal molecules are inclined. Therefore, the wide viewing angle can be secured by dispersing the oblique directions of the liquid crystal molecules in various directions using the cutout.

However, in order to form an incision, a photolithography process for patterning a common electrode or a pixel electrode is added, thereby increasing production cost and production time. In addition, a phenomenon in which static electricity is concentrated at the cut portion of the pixel electrode or the common electrode occurs, and thus a polarizer needs to be electrically conductively processed.

An object of the present invention is to provide a liquid crystal display device that can form a plurality of domains while simplifying a manufacturing process.

According to an aspect of the present invention, a liquid crystal display (LCD) is formed on an insulating substrate and covers a thin film transistor and a thin film transistor connected to a gate line and a data line, a gate line and a data line defining a pixel region. And a pixel electrode formed on the passivation layer, the passivation layer formed on the passivation layer, and electrically connected to the thin film transistor and having a bent portion along the protrusion.

The protrusion may be linear and the pixel electrode may have an incision.

Incisions and protrusions may be arranged alternately.

The thin film transistor may include a gate electrode which is a part of the gate line, a semiconductor formed on the gate electrode, a source electrode where the semiconductor and the predetermined region overlap with the portion of the data line, and a drain electrode where the semiconductor and the predetermined region overlap.

The semiconductor device may further include an ohmic contact formed between the data line and the drain electrode and the semiconductor.

Or a substrate, an insulating film formed on the substrate and having an incision, and a common electrode formed on the insulating film and bent along the incision.

The insulating layer may be a color filter and may further include a color filter formed under the insulating layer.

The dielectric material may further include a dielectric filled in the valley of the common electrode curved by the incision, and the dielectric constant of the dielectric may be 3 or less.

Or on a first insulating substrate, a gate line and a data line formed on the first insulating substrate, a thin film transistor connected to the gate line and the data line, a thin film transistor, a gate line and a data line, and a protective film having a protrusion and a protective film. A pixel electrode which is formed and bent along the protrusion, a second insulating substrate facing the first insulating substrate, an insulating film formed on the second insulating substrate, a common electrode formed on the insulating film, and a first insulating substrate and the second insulating substrate. And a liquid crystal layer formed between the insulating substrates.

The insulating layer may have a first cutout, and the protrusion may be formed at a position corresponding to the first cutout.

The common electrode may be bent along the first cutout, and the pixel electrode may have a second cutout disposed alternately with the first cutout.

Or on the first insulating substrate, the gate line and the data line formed on the first insulating substrate, the thin film transistor connected to the gate line and the data line, the protective film formed on the thin film transistor, the gate line and the data line. A pixel electrode, a second insulating substrate facing the first insulating substrate, an insulating film formed on the second insulating substrate and having a first cutout portion, a common electrode formed on the insulating film and bent along the first cutout portion, and first insulating And a liquid crystal layer formed between the substrate and the second insulating substrate.

The insulating layer may be a color filter and may further include a color filter formed under the insulating layer.

The passivation layer may have a protrusion corresponding to the first cutout, and the pixel electrode may have a second cutout disposed alternately with the first cutout.

The pixel electrode may be bent along the protrusion.

It may further include a dielectric formed on the common electrode and filling the valley of the common electrode.

The dielectric may have a lower dielectric constant than the liquid crystal molecules of the liquid crystal layer, and the dielectric constant may be 3 or less.

DETAILED DESCRIPTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, area, plate, etc. is over another part, this includes not only the part directly above the other part but also another part in the middle. On the contrary, when a part is just above another part, it means that there is no other part in the middle.

Embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

1 is a layout view of a thin film transistor array panel for a liquid crystal display according to an exemplary embodiment of the present invention, FIG. 2 is a layout view of a common electrode display panel for a liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 2 is a layout view of a liquid crystal display according to an exemplary embodiment of the present invention including the two display panels of FIG. 2. FIG. 4 is a cross-sectional view of the liquid crystal display of FIG. 3 taken along line IV-IV ′, and FIG. 5 is of FIG. 3. This is a cross-sectional view taken along the line V-V '.

The liquid crystal display is almost vertically oriented between the thin film transistor array panel 100 and the common electrode panel 200 facing the thin film transistor array panel 100 and the thin film transistor array panel 100, the thin film transistor array panel 100, and the common electrode panel 200. It consists of a liquid crystal layer containing liquid crystal molecules 3.

First, a thin film transistor array panel of a liquid crystal display according to an exemplary embodiment will be described with reference to FIGS. 1, 3, 4, and 5.

A plurality of gate lines 121 are formed on an insulating substrate 110 made of transparent glass or plastic.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction. Each gate line 121 includes a plurality of gate electrodes 124 protruding upward and downward and a wide end portion 129 for connection with another layer or an external driving circuit. A gate driving circuit (not shown) for generating a gate signal may be mounted on a flexible printed circuit film (not shown) attached to the substrate 110 or directly mounted on the substrate 110, It may be integrated into the substrate 110. When the gate driving circuit is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The gate line 121 may be formed of aluminum-based metal such as aluminum (Al) or aluminum alloy, silver-based metal such as silver (Ag) or silver alloy, copper-based metal such as copper (Cu) or copper alloy, molybdenum (Mo) or molybdenum alloy, etc. It may be made of molybdenum-based metal, chromium (Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties. One of the conductive films is made of metal having low resistivity, such as aluminum-based metal, silver-based metal, or copper-based metal, so as to reduce signal delay or voltage drop. On the other hand, other conductive films are made of other materials, particularly materials having excellent physical, chemical and electrical contact properties with indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum-based metals, chromium, titanium, tantalum, and the like. Good examples of such a combination include a chromium bottom film, an aluminum (alloy) top film, and an aluminum (alloy) bottom film and a molybdenum (alloy) top film. However, the gate line 121 may be made of various other metals or conductors. The side surface of the gate line 121 is inclined with respect to the surface of the substrate 110 and the inclination angle is preferably about 30 to about 80 degrees.

A gate insulating layer 140 made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed on the gate line 121.

On the gate insulating layer 140, a plurality of linear semiconductors 151 made of hydrogenated amorphous silicon (amorphous silicon is abbreviated a-Si) or polysilicon are formed on the gate insulating layer 140. have. The linear semiconductor 151 mainly extends in the longitudinal direction and includes a plurality of projections 154 extending toward the gate electrode 124.

A plurality of linear and island ohmic contacts 161 and 165 are formed on the semiconductor 151. The ohmic contacts 161 and 165 may be made of a material such as n + hydrogenated amorphous silicon in which n-type impurities such as phosphorus are heavily doped, or may be made of silicide. The linear ohmic contact 161 has a plurality of protrusions 163, and the protrusion 163 and the island-type ohmic contact 165 are paired and disposed on the protrusion 154 of the semiconductor 151.

Side surfaces of the semiconductor 151 and the ohmic contacts 161 and 165 are also inclined with respect to the surface of the substrate 110, and the inclination angle is preferably about 30 ° to about 80 °.

 A plurality of data lines 171 and a plurality of drain electrodes 175 are formed on the ohmic contacts 161 and 165 and the gate insulating layer 140.

The data line 171 mainly extends in the vertical direction and crosses the gate line 121. Each data line 171 includes a plurality of source electrodes 173 extending toward the gate electrode 124 and an end portion 179 having a large area for connection with another layer or an external driving circuit. A data driving circuit (not shown) for generating a data signal is mounted on a flexible printed circuit film (not shown) attached to the substrate 110, directly mounted on the substrate 110, or integrated in the substrate 110. Can be. When the data driving circuit is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The drain electrode 175 is separated from the data line 171 and faces the source electrode 173 with respect to the gate electrode 124. One gate electrode 124, one source electrode 173, and one drain electrode 175 together with the protrusion 154 of the semiconductor 151 form a thin film transistor (TFT). A channel is formed in the protrusion 154 between the source electrode 173 and the drain electrode 175.

The data line 171 and the drain electrode 175 are preferably made of a refractory metal such as molybdenum, chromium, tantalum, and titanium, or an alloy thereof, and include a refractory metal film (not shown) and a low resistance conductive film. It may have a multilayer structure including (not shown). Examples of the multilayer structure include a double layer of chromium or molybdenum (alloy) lower layer and an aluminum (alloy) upper layer, and a triple layer of molybdenum (alloy) lower layer and aluminum (alloy) interlayer and molybdenum (alloy) upper layer. However, the data line 171 and the drain electrode 175 may be made of various metals or conductors.

The side of the data line 171 and the drain electrode 175 may be inclined at an inclination angle of about 30 to 80 degrees with respect to the surface of the substrate 110.

The ohmic contacts 161 and 165 exist only between the semiconductor 151 below and the data line 171 and the drain electrode 175 thereon, and lower the contact resistance therebetween. In most places, the width of the linear semiconductor 151 is smaller than the width of the data line 171.

A passivation layer 180 is formed on the data line 171, the drain electrode 175, and the exposed semiconductor 151. The passivation layer 180 is made of an inorganic insulator such as silicon nitride or silicon oxide, an organic insulator, or a low dielectric insulator. The dielectric constant of the organic insulator and the low dielectric insulator is preferably 4.0 or less. Examples of the low dielectric insulator include a-Si: C: O and a-Si: O formed by plasma enhanced chemical vapor deposition (PECVD). : F, etc. can be mentioned. The passivation layer 180 may be formed by having photosensitivity among the organic insulators, and the surface of the passivation layer 180 may be flat. However, the passivation layer 180 may have a double layer structure of the lower inorganic layer and the upper organic layer so as not to damage the exposed portion of the semiconductor 151 while maintaining excellent insulating properties of the organic layer.

The passivation layer 180 is provided with a plurality of contact holes 185 exposing the drain electrode 175.

A plurality of pixel electrodes 190 are formed on the passivation layer 180. These may be made of a transparent conductive material such as ITO or IZO or a reflective metal such as aluminum, silver or an alloy thereof.

The pixel electrode 190 is physically and electrically connected to the drain electrode 175 through the contact hole 185 and receives a data voltage from the drain electrode 175. The pixel electrode 190 to which the data voltage is applied generates an electric field together with the common electrode 270 of the other display panel 200 to which the common voltage is applied, thereby generating a liquid crystal layer 300 between the two electrodes. Determines the direction of the liquid crystal molecules. The pixel electrode 190 and the common electrode form a capacitor (hereinafter referred to as a "liquid crystal capacitor") to maintain an applied voltage even after the thin film transistor is turned off. There are other capacitors connected in parallel, which are called storage capacitors. The storage capacitor is formed by overlapping the pixel electrode 190 with the storage electrode line (not shown), or the like, and in order to increase the capacitance of the storage capacitor, that is, the storage capacitance, the storage electrode line is provided with the storage electrode (not shown). By extending and expanding the drain electrode 175 connected to the 190 to close the distance between the terminals to increase the overlap area.

The pixel electrode 190 has a substantially rectangular shape in which four corners are chamfered, and the chamfered hypotenuse forms an angle of about 45 ° with respect to the gate line 121.

The pixel electrode 190 has a central cutout 91, a lower cutout 92a, and an upper cutout 92b, and the pixel electrode 190 includes a plurality of regions by these cutouts 91, 92a, and 92b. Divided into. The cutouts 91, 92a, and 92b have almost inverted symmetry with respect to a horizontal center line that bisects the pixel electrode 190 in parallel with the gate line 121.

The lower and upper cutouts 92a and 92b extend obliquely from the right side to the left side of the pixel electrode 190 and are positioned on the lower half and the upper half of the horizontal center line of the pixel electrode 190, respectively. The lower and upper cutouts 92a and 92b extend perpendicular to each other at an angle of about 45 ° with respect to the gate line 121.

The center cutout 91 is disposed at the center of the pixel electrode 190 and has an inlet at the right side. The inlet of the central incision 91 has a pair of hypotenuses substantially parallel to the lower incision 92a and the upper incision 92b, respectively.

Accordingly, the lower half of the pixel electrode is divided into two regions by the lower cutout 92a, and the upper half is also divided into two regions by the upper cutout 92b. In this case, the number of regions or the number of cutouts may vary depending on the size of the pixel, the length ratio of the horizontal side and the vertical side of the pixel electrode, the type and characteristics of the liquid crystal layer 300, and the inclination direction may also vary.

In addition, although the pixel electrode 190 overlaps with the neighboring gate line 121 and the data line 171 to increase the aperture ratio, the pixel electrode 190 may not overlap.

The passivation layer 180 may have contact holes (not shown) exposing one end portions of the data line 171 and the gate line 121, respectively, and the data line 171 and the gate line 121 may be formed through the contact holes. It may include a contact auxiliary member (not shown) connected to one end of the).

 Next, the common electrode display panel 200 will be described in more detail with reference to FIGS. 2 to 5.

As illustrated, a light blocking member 220 called a black matrix is formed on an insulating substrate 210 made of transparent glass or plastic. The light blocking member 220 has a plurality of openings 225 facing the pixel electrode 190 and having substantially the same shape as the pixel electrode 190. The light blocking member 220 may further include a portion facing the thin film transistor and may extend only along the data line 171.

The light blocking member 220 may be formed of a single layer of chromium or a double layer of chromium and chromium oxide, or may be formed of an organic layer including a black pigment. A plurality of color filters 230R, 230G, and 230B are formed on the substrate 210. The color filters 230R, 230G, and 230B face the pixel electrode 190, have a band shape extending in the vertical direction, and may display one of primary colors such as red, green, and blue, and the primary color. Examples thereof include three primary colors such as red, green, and blue. Edges of neighboring color filters 230R, 230G, and 230B may overlap.

The color filter 230 has a plurality of cutouts 271, 272, and 273 or grooves (not shown).

One set of cutouts 271, 272, and 273 includes a center cutout 271, a lower cutout 272, and an upper cutout 273 facing one pixel electrode 190. Each of the cutouts 271, 272, and 273 is disposed between the adjacent cutouts 271, 272, and 273 of the pixel electrode 190, or between the cutouts 271, 272, and 273 and the chamfered hypotenuse of the pixel electrode 190. It is arranged. In addition, each cutout 271, 272, and 273 includes at least one diagonal line extending in parallel with the lower cutout 92a or the upper cutout 92b of the pixel electrode 190.

Each of the lower and upper incisions 272, 273 includes an oblique portion, a horizontal portion and a longitudinal portion. The diagonal portion extends substantially parallel to the lower or upper cutouts 92a and 92b of the pixel electrode 190 from the upper side or the lower side of the pixel electrode 190 to the left side. The horizontal portion and the vertical portion extend along the sides of the pixel electrode 190 from each end of the diagonal portion and form an obtuse angle with the diagonal portion.

The central cutout 271 includes a central transverse section, a pair of diagonal lines and a pair of longitudinal longitudinal sections. The central horizontal portion extends from the left side of the pixel electrode 9190 to the right along the horizontal center line of the pixel electrode 190, and the pair of diagonal portions respectively extends toward the right side of the pixel electrode 190 at the end of the central horizontal portion. It extends almost parallel to the upper incisions 272, 273. The vertical longitudinal portion extends along the right side of the pixel electrode 190 from each end of the diagonal portion and forms an obtuse angle with the diagonal portion.

The above cutouts 271, 272 and 273 may be formed together when patterning the respective color filters 230R, 230G, and 230B, so that a separate mask process is not added.

An overcoat (not shown) may be further formed between the common electrode 270 and the color filter 230 to prevent the color filter from being exposed and to provide a flat surface.

The common electrode 270 made of a transparent conductive material such as ITO or IZO is stacked on the color filter 230. Since the common electrode 270 is stacked along the cutouts 271, 272 and 273 of the color filter, the common electrode 270 has the same shape as the cutouts 271, 272 and 273.

The number and direction of the cutouts 271, 272, and 273 may also vary depending on the design element. The light blocking member 220 may overlap the cutouts 91, 92a, 92b, 271, 272, and 273 to block light leakage near the cutouts 271, 272, and 273.

Alignment layers 11 and 21 are coated on inner surfaces of the two display panels 100 and 200 described above, which may be vertical alignment layers. Polarizers 12 and 22 are provided on the outer surfaces of the display panels 100 and 200, and the transmission axes of the two polarizers 12 and 22 are orthogonal to each other, and one of the transmission axes is parallel to the gate line 121. Do. In the case of a reflective liquid crystal display, one of the two polarizers 12 and 22 may be omitted.

A phase retardation film may be interposed between the display panels 100 and 200 and the polarizers to compensate for the delay value of the liquid crystal layer 300, respectively. The phase retardation film has a birefringence and serves to reversely compensate for the birefringence of the liquid crystal layer 300. As the retardation film, a uniaxial or biaxial optical film can be used, and in particular, a negative uniaxial optical film can be used.

The liquid crystal display may also include a polarizer phase retardation film, display panels 100 and 200, and a backlight unit for supplying light to the liquid crystal layer 300.

The liquid crystal layer 300 has negative dielectric anisotropy, and the liquid crystal molecules 31 of the liquid crystal layer 300 are aligned such that their major axes are perpendicular to the surfaces of the two display panels in the absence of an electric field. Therefore, incident light does not pass through the quadrature polarizers 12 and 22 and is blocked.

When the common voltage is applied to the common electrode 270 and the data voltage is applied to the pixel electrode 190, an electric field (field) in which the display panels 100 and 200 are substantially perpendicular to the surface is generated. In response to the electric field, the liquid crystal molecules attempt to change their long axis to be perpendicular to the direction of the electric field. In the future, the pixel electrode 190 and the common electrode 270 are collectively referred to as an electric field generating electrode.

Meanwhile, the hypotenuses of the cutouts 91, 92a, 92b, 271, 272, and 273 of the pixel electrode 190 and the color filters 230R, 230G, and 230B, and the pixel electrode 190 parallel to them distort the electric field. It creates a horizontal component that determines the tilt direction of liquid crystal molecules. The horizontal component of the electric field is perpendicular to the hypotenuse of the cutouts 91, 92a, 92b, 271, 272, and 273 and the hypotenuse of the pixel electrode 190.

One set of cutouts 91, 92a, 92b, 271, 272, and 273 divides the pixel electrode 190 into a plurality of sub-areas having two inclined peripheries, respectively. The inclination direction of the liquid crystal molecules is determined by the direction determined by the horizontal component of the electric field, and the inclination direction is approximately four directions. As described above, when the liquid crystal molecules are inclined in various directions, the reference viewing angle of the liquid crystal display is increased.

The liquid crystal molecules in each domain defined by adjacent incisions 91, 92a, 92b, 271, 273, 273 are perpendicular to the longitudinal direction of the incisions 91, 92a, 92b, 271, 272, 273. Tilt in the direction of formation. The two longest sides of each domain are almost parallel to each other, and form approximately ± 45 degrees with the gate line 121, and most of the liquid crystal molecules in the domain are inclined in four directions.

The thin film transistor array panel may be formed as shown in FIGS. 6 and 7 to form a plurality of domains.

6 is a layout view of a thin film transistor array panel for a liquid crystal display according to another exemplary embodiment. FIG. 7 is a cross-sectional view taken along the line VII-VII ′ of FIG. 6.

The interlayer structure of the embodiment of FIGS. 6 and 7 is almost the same as the embodiment shown in FIGS.

That is, the gate line 121 is formed on the substrate 100, the semiconductor 151 overlapping with the gate line 121 is formed, and the data line 171 overlaps with the semiconductor 151 in part. The drain electrode 175 is formed. The passivation layer 180 is formed on the data line 171 and the drain electrode 175, and the pixel electrode 190 connected to the drain electrode 175 is formed on the passivation layer 180.

However, the embodiment of FIGS. 6 and 7 has protrusions 93, 94a, and 94b on the passivation layer 180, unlike the embodiment of FIGS. 1 to 5. The protrusions 93, 94a, and 94b are formed to correspond to the cutouts 271, 272, and 273 of the common electrode display panel.

As such, when the cutouts and the protrusions of the common electrode display panel correspond to the same positions, the gap between the substrates is narrower than that of the embodiment of FIGS.

In the above-described liquid crystal display, when the electric field is formed on the common electrode and the pixel electrode, the equipotential lines are formed almost in parallel with the substrates 110 and 210 in most pixel regions, but the protrusions 93, 94a, 94b) and around the cutouts 271, 272, and 273 of the color filter, the equipotential lines are bent along the valleys or protrusions of the common electrode 190 and the pixel electrode formed due to these steps.

The liquid crystal molecules of the liquid crystal layer 300 are aligned side by side with respect to the curved equipotential line, and are aligned in different directions with respect to the protrusion and the cutout, so that the pixel is divided into a plurality of domains according to the arrangement direction of the liquid crystal molecules.

Referring to the cross-sectional view schematically showing an equipotential line of the liquid crystal display according to the exemplary embodiment of FIG. 8, the protrusion is formed in the thin film transistor array panel of FIG. 8.

As shown in FIG. 8, a curved equipotential line is formed around the protrusion P and the cutout C unlike other portions. Accordingly, the liquid crystal molecules are arranged in different directions side by side along the curved equipotential lines and are divided and oriented in a plurality of domains. The cutouts 91, 92a and 92b, the protrusions 93, 94a and 94b and the color filter cutouts 271, 272 and 273 of the thin film transistor array panel are domain division means for forming a plurality of domains in various forms. It can be modified.

In FIG. 8, reference numeral 10 denotes a portion of the thin film transistor array panel 100 positioned under the alignment layer 11 and the passivation layer 180, and reference numeral 20 denotes the alignment layer 21 and the common electrode of the common electrode display panel 200. 270 shows the portion located below.

In the liquid crystal display according to the exemplary embodiment of the present invention, a plurality of cutouts may be formed in the common electrode 270 by using cutouts or grooves under the common electrode 270 even though the cutouts are not formed in the common electrode 270. You can get the domain of. Accordingly, since no static electricity is accumulated in the cut portion of the common electrode 270, the polarizer does not have to be electrically conductive. In addition, since a patterning process for patterning the common electrode 270 is not required, the manufacturing process may be simplified.

 Next, a liquid crystal display according to another exemplary embodiment of the present invention will be described with reference to the accompanying drawings.

FIG. 9 is a layout view of a liquid crystal display according to another exemplary embodiment. FIG. 10 is a cross-sectional view taken along the line XX ′ of FIG. 9, and FIG. 11 is a cross-sectional view taken along the line XI-XI ′ of FIG. 9. to be.

9 to 11, in the exemplary embodiment of the present invention, the thin film transistor array panel 100, the common electrode display panel 200, the liquid crystal layer 300 injected between the two display panels, and the outside of each display panel 100 and 200. It includes the polarizers 12 and 22 formed in the.

In other words, the plurality of linear semiconductors including the plurality of gate lines 121 including the plurality of gate electrodes 124 is formed on the substrate 110, and the plurality of linear semiconductors including the gate insulating layer 140 and the plurality of protrusions 154 thereon. 151, a plurality of linear ohmic contact members 161 each including a plurality of protrusions 163, and a plurality of island type ohmic contact members 165 are sequentially formed. A plurality of data lines 171 including a plurality of source electrodes 173 and a plurality of drain electrodes 175 are formed on the ohmic contacts 161 and 165 and the gate insulating layer 140, and the passivation layer 180 is formed thereon. Is formed.

A plurality of contact holes 185 are formed in the passivation layer 180, and a plurality of pixel electrodes 190 are formed on the passivation layer 180. An alignment layer 11 is formed on the pixel electrode 190.

However, the semiconductor 151 has a planar shape substantially the same as the data line 171, the drain electrode 175, and the ohmic contacts 161 and 165, except for the protrusion 154 where the thin film transistor is located. have. In detail, the linear semiconductor 151 may include the source electrode 173 and the drain electrode 175 in addition to the data line 171, the drain electrode 175, and the portions below the ohmic contacts 161 and 165. ) Has an exposed portion between them.

 6 and 7, the passivation layer 180 is formed to have protrusions 93, 94a and 94b, and is disposed on the pixel electrode on the passivation layer 180 including the protrusions 93, 94a and 94b. 190 is formed along the protrusions 93, 94a, 94b to have a protruding portion.

In the method of manufacturing the thin film transistor according to the exemplary embodiment of the present invention, the data line 171, the drain electrode 175, the semiconductor 151, and the ohmic contacts 161 and 165 are formed in one photo process.

The photosensitive film used in such a photo process differs in thickness according to a position, and especially includes a 1st part and a 2nd part in order of decreasing thickness. The first portion is positioned in the wiring region occupied by the data line 171 and the drain electrode 175, and the second portion is positioned in the channel region of the thin film transistor.

There may be various methods of varying the thickness of the photoresist film according to the position. For example, a method of providing a translucent area in addition to a light transmitting area and a light blocking area in a photomask is possible. have. The translucent region is provided with a slit pattern, a lattice pattern, or a thin film having a medium transmittance or a medium thickness. When using the slit pattern, it is preferable that the width of the slits and the interval between the slits are smaller than the resolution of the exposure machine used for the photographic process. Another example is to use a photoresist film that can be reflowed. That is, a thin portion is formed by forming a reflowable photoresist film with a conventional exposure mask having only a light transmitting region and a light shielding region, and then reflowing to allow the photoresist film to flow down into an area where no photoresist remains.

In this way, a one-time photographic process can be reduced, thereby simplifying the manufacturing method.

In addition, the common electrode panel 200 also has the same layered structure as the embodiment of FIGS. 1 to 7. That is, the light blocking member 220 is formed on the substrate 210, and the red, blue, and green color filters 230R, 230G, and 230B are formed in the opening 225 in the light blocking member 220. A common electrode 270 made of a transparent conductive material such as ITO or IZO is stacked on the color filters 230R, 230G, and 230B. The alignment film 21 for aligning the liquid crystal in a predetermined direction is formed on the common electrode 270.

However, unlike the embodiment of FIGS. 1 to 7, the color filters 230R, 230G, and 230B do not have cutouts or grooves.

However, the embodiment of FIGS. 9 to 11 may have many features of the embodiment of FIGS. 1 to 7.

Another embodiment of the present invention will be described with reference to FIG.

12 is a cross-sectional view illustrating a structure of a liquid crystal display according to an exemplary embodiment of the present invention, taken along the line IV-IV ′ of FIG. 3.

In the exemplary embodiment of the present invention illustrated in FIG. 12, the thin film transistor array panel 100, the common electrode display panel 200, and the liquid crystal layer 300 injected between the two display panels and the outside of the display panels 100 and 200 are formed. Polarizers 12, 22. That is, the thin film transistor display panel and the common electrode display panel have substantially the same interlayer structure as those of FIGS. 1 to 5 having domain division means.

However, in the embodiment of FIG. 12, an overcoat layer 250 is formed between the color filters 230R, 230G, and 230B and the common electrode 270, and is a domain dividing means of the common electrode display panel 200. The cutouts 271, 272, and 273 are formed in the overcoat 250, unlike the embodiment of FIGS. 1 to 5. The color filters 230R, 230G, 230B do not have an incision. The overcoat 250 prevents the pigment of the color filter from diffusing to the common electrode 270.

The common electrode 270 formed on the overcoat 250 is formed in a shape having a valley by the cutouts 271, 272, and 273 of the overcoat 250. In FIG. 12, the cutouts 271, 272, and 273 and the protrusions 93, 94a, and 94b are disposed to correspond to each other, but the protrusions 93, 94a, and 94b may not be formed as in the embodiment of FIGS. 1 to 5. Can be.

1 to 12, in the liquid crystal display including the display panel and the liquid crystal display including the same, the valleys formed in the common electrode 270 may have an organic material 260 having a dielectric constant smaller than that of the liquid crystal (eg, ε <3). It is preferable to fill with). This increases the curvature of the equipotential lines applied to the liquid crystal by the dielectric material, thereby increasing the regulating power of the liquid crystal, thereby facilitating the alignment of the liquid crystal.

The embodiment shown in FIG. 12 can also include many of the features of FIGS. 1 through 11.

6 and 7, when the protrusion is formed, the cutout of the common electrode display panel may not be formed. In this case, as in the embodiments of FIGS. 1 to 5 where the protrusions are not formed, the regulating force of the liquid crystal may be weak. Thus, as shown in FIGS. 6 and 7, the protrusions may be formed together with the cutouts on the upper and lower panels. It is preferable.

As in the above embodiment, it is possible to form a domain dividing means in the common electrode without a separate patterning process can simplify the manufacturing process.

Since the cutout is not formed in the common electrode as described above, the conductive process of the polarizer for preventing the inflow of static electricity is not required, thereby simplifying the manufacturing process.

Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

Claims (25)

Insulation board, A gate line and a data line formed on the insulating substrate and defining a pixel area; A thin film transistor connected to the gate line and the data line, A protective film covering the thin film transistor and having a plurality of protrusions; and A pixel electrode formed on the passivation layer and electrically connected to the thin film transistor and having a bent portion along the protrusion; Liquid crystal display comprising a. In claim 1, The protrusion is formed in a linear liquid crystal display device. In claim 1, The pixel electrode has a cutout. In claim 3, And the cutout and the protrusion are alternately disposed. In claim 1, The thin film transistor, A gate electrode which is a part of the gate line, A semiconductor formed on the gate electrode, A source electrode overlapping the semiconductor with a predetermined region as part of the data line, and A drain electrode in which the semiconductor and a predetermined region overlap Liquid crystal display comprising a In claim 5, And a resistive contact member formed between the data line and the drain electrode and the semiconductor. Board, An insulating film formed on the substrate and having an incision; A common electrode formed on the insulating layer and bent along the cutout Liquid crystal display comprising a. In claim 7, And the insulating film is a color filter. In claim 7, And a color filter formed under the insulating film. In claim 7, And a dielectric filled in the valley of the common electrode bent by the cutout. In claim 10, The dielectric constant of the dielectric is 3 or less. First insulating substrate, A gate line and a data line formed on the first insulating substrate; A thin film transistor connected to the gate line and the data line, A passivation layer formed on the thin film transistor, the gate line and the data line and having a protrusion; A pixel electrode formed on the passivation layer and curved along the protrusion; A second insulating substrate facing the first insulating substrate, An insulating film formed on the second insulating substrate, A common electrode formed on the insulating film, and Liquid crystal layer formed between the first insulating substrate and the second insulating substrate Liquid crystal display comprising a. In claim 12, The insulating film has a first cutout. In claim 13, The protrusion is formed in a position corresponding to the first cutout. In claim 13, The common electrode is bent along the first cutout. In claim 12, And the pixel electrode has a second cutout disposed alternately with the first cutout. First insulating substrate, A gate line and a data line formed on the first insulating substrate; A thin film transistor connected to the gate line and the data line, A passivation layer formed on the thin film transistor, the gate line and the data line; A pixel electrode formed on the passivation layer, A second insulating substrate facing the first insulating substrate, An insulating film formed on the second insulating substrate and having a first cutout, A common electrode formed on the insulating film and curved along the first cutout; Liquid crystal layer formed between the first insulating substrate and the second insulating substrate Liquid crystal display comprising a. The method of claim 17, And the insulating film is a color filter. The method of claim 17, And a color filter formed under the insulating film. The method of claim 17, The passivation layer has a protrusion corresponding to the first cutout. The method of claim 20, And the pixel electrode has a second cutout disposed alternately with the first cutout. The method of claim 20, The pixel electrode is curved along the protrusion. The method of claim 17, And a dielectric formed on the common electrode and filling the valley of the common electrode. The method of claim 23, And wherein the dielectric has a lower dielectric constant than liquid crystal molecules of the liquid crystal layer. The method of claim 24, And a dielectric constant of 3 or less.

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