KR20060076072A - 커패시턴스 게이지를 이용한 도포막 불균일성 감지 시스템 - Google Patents
커패시턴스 게이지를 이용한 도포막 불균일성 감지 시스템 Download PDFInfo
- Publication number
- KR20060076072A KR20060076072A KR1020040115762A KR20040115762A KR20060076072A KR 20060076072 A KR20060076072 A KR 20060076072A KR 1020040115762 A KR1020040115762 A KR 1020040115762A KR 20040115762 A KR20040115762 A KR 20040115762A KR 20060076072 A KR20060076072 A KR 20060076072A
- Authority
- KR
- South Korea
- Prior art keywords
- nozzle
- photoresist
- capacitance
- wafer
- preweight
- Prior art date
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 34
- 239000011248 coating agent Substances 0.000 title claims abstract description 29
- 238000001514 detection method Methods 0.000 title claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 10
- 230000008859 change Effects 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims abstract description 5
- 230000002159 abnormal effect Effects 0.000 claims abstract description 4
- 230000005684 electric field Effects 0.000 claims abstract description 3
- 235000012431 wafers Nutrition 0.000 abstract description 42
- 230000007547 defect Effects 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000011897 real-time detection Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000005856 abnormality Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000009474 immediate action Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (1)
- 포토레지스터 용제를 분출하여 웨이퍼 일면에 레지스터 막을 형성시키도록 하는 포토레지스터 노즐과;상기 포토레지스터 노즐에 인접하게 위치하며 신나 등의 용제를 분출하는 프리웨이트 노즐과;상기 포토레지스터 노즐과 프리웨이트 노즐을 웨이퍼상의 특정 위치로 이송시키기 위한 노즐암과;상기 노즐암에 고정되며 상기 프리웨이트 노즐의 주변에 인접하고 임의의 전계전압에 의해 일정한 커패시턴스를 유지하고 있는 커패시턴스 게이지; 및상기 커패시턴스 게이지에서 유지하고 있는 커패시턴스의 변화가 발생하는 경우 이를 감지하여 프리웨이트 공정 중인 경우는 정상상태로 인식하며 그 외의 경우는 이상 상태로 인식하는 처리장치를 포함하는 것을 특징으로 하는 커패시턴스 게이지를 이용한 도포막 불균일성 감지 시스템.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040115762A KR20060076072A (ko) | 2004-12-29 | 2004-12-29 | 커패시턴스 게이지를 이용한 도포막 불균일성 감지 시스템 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040115762A KR20060076072A (ko) | 2004-12-29 | 2004-12-29 | 커패시턴스 게이지를 이용한 도포막 불균일성 감지 시스템 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20060076072A true KR20060076072A (ko) | 2006-07-04 |
Family
ID=37168537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040115762A KR20060076072A (ko) | 2004-12-29 | 2004-12-29 | 커패시턴스 게이지를 이용한 도포막 불균일성 감지 시스템 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20060076072A (ko) |
-
2004
- 2004-12-29 KR KR1020040115762A patent/KR20060076072A/ko not_active Application Discontinuation
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