KR20060050750A - 다층구조의 나노결정 및 그의 제조방법 - Google Patents
다층구조의 나노결정 및 그의 제조방법 Download PDFInfo
- Publication number
- KR20060050750A KR20060050750A KR1020050079284A KR20050079284A KR20060050750A KR 20060050750 A KR20060050750 A KR 20060050750A KR 1020050079284 A KR1020050079284 A KR 1020050079284A KR 20050079284 A KR20050079284 A KR 20050079284A KR 20060050750 A KR20060050750 A KR 20060050750A
- Authority
- KR
- South Korea
- Prior art keywords
- nanocrystal
- nanocrystals
- group
- zinc
- cadmium
- Prior art date
Links
- 239000002159 nanocrystal Substances 0.000 title claims abstract description 180
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 70
- 239000000956 alloy Substances 0.000 claims abstract description 70
- 239000000463 material Substances 0.000 claims abstract description 65
- -1 multilayer structure Substances 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 100
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 56
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 125000004432 carbon atom Chemical group C* 0.000 claims description 24
- 239000002243 precursor Substances 0.000 claims description 23
- 238000009792 diffusion process Methods 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000002904 solvent Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 16
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- RMZAYIKUYWXQPB-UHFFFAOYSA-N trioctylphosphane Chemical compound CCCCCCCCP(CCCCCCCC)CCCCCCCC RMZAYIKUYWXQPB-UHFFFAOYSA-N 0.000 claims description 11
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 10
- 150000001336 alkenes Chemical class 0.000 claims description 10
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 9
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 9
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 9
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000005642 Oleic acid Substances 0.000 claims description 9
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 9
- 239000002270 dispersing agent Substances 0.000 claims description 9
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 9
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid group Chemical group C(CCCCCCC\C=C/CCCCCCCC)(=O)O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 9
- 239000004246 zinc acetate Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 230000005525 hole transport Effects 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 7
- 230000035484 reaction time Effects 0.000 claims description 7
- 230000001629 suppression Effects 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 241001455273 Tetrapoda Species 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 6
- 239000004054 semiconductor nanocrystal Substances 0.000 claims description 6
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Substances C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 6
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 claims description 6
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 6
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 5
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 5
- 229910021478 group 5 element Inorganic materials 0.000 claims description 5
- 229910021476 group 6 element Inorganic materials 0.000 claims description 5
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 claims description 5
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 claims description 5
- PMBXCGGQNSVESQ-UHFFFAOYSA-N 1-Hexanethiol Chemical compound CCCCCCS PMBXCGGQNSVESQ-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 150000003973 alkyl amines Chemical class 0.000 claims description 4
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 4
- KPWJBEFBFLRCLH-UHFFFAOYSA-L cadmium bromide Chemical compound Br[Cd]Br KPWJBEFBFLRCLH-UHFFFAOYSA-L 0.000 claims description 4
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims description 4
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 claims description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 4
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 claims description 4
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 3
- SNTWKPAKVQFCCF-UHFFFAOYSA-N 2,3-dihydro-1h-triazole Chemical compound N1NC=CN1 SNTWKPAKVQFCCF-UHFFFAOYSA-N 0.000 claims description 3
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 3
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 claims description 3
- LZSJBLXYNYSKPJ-UHFFFAOYSA-N 9-octyl-9h-fluorene Chemical class C1=CC=C2C(CCCCCCCC)C3=CC=CC=C3C2=C1 LZSJBLXYNYSKPJ-UHFFFAOYSA-N 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 3
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 3
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- IKIBSPLDJGAHPX-UHFFFAOYSA-N arsenic triiodide Chemical compound I[As](I)I IKIBSPLDJGAHPX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- 229910000337 indium(III) sulfate Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 claims description 3
- 229910000464 lead oxide Inorganic materials 0.000 claims description 3
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 claims description 3
- FQGYCXFLEQVDJQ-UHFFFAOYSA-N mercury dicyanide Chemical compound N#C[Hg]C#N FQGYCXFLEQVDJQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001987 mercury nitrate Inorganic materials 0.000 claims description 3
- DRXYRSRECMWYAV-UHFFFAOYSA-N nitrooxymercury Chemical compound [Hg+].[O-][N+]([O-])=O DRXYRSRECMWYAV-UHFFFAOYSA-N 0.000 claims description 3
- 150000004866 oxadiazoles Chemical class 0.000 claims description 3
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 3
- 150000005041 phenanthrolines Chemical class 0.000 claims description 3
- 150000003852 triazoles Chemical class 0.000 claims description 3
- 239000011667 zinc carbonate Substances 0.000 claims description 3
- 229910000010 zinc carbonate Inorganic materials 0.000 claims description 3
- 235000004416 zinc carbonate Nutrition 0.000 claims description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 claims description 2
- MFEVGQHCNVXMER-UHFFFAOYSA-L 1,3,2$l^{2}-dioxaplumbetan-4-one Chemical compound [Pb+2].[O-]C([O-])=O MFEVGQHCNVXMER-UHFFFAOYSA-L 0.000 claims description 2
- DOBUSJIVSSJEDA-UHFFFAOYSA-L 1,3-dioxa-2$l^{6}-thia-4-mercuracyclobutane 2,2-dioxide Chemical compound [Hg+2].[O-]S([O-])(=O)=O DOBUSJIVSSJEDA-UHFFFAOYSA-L 0.000 claims description 2
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 claims description 2
- IGPFOKFDBICQMC-UHFFFAOYSA-N 3-phenylmethoxyaniline Chemical compound NC1=CC=CC(OCC=2C=CC=CC=2)=C1 IGPFOKFDBICQMC-UHFFFAOYSA-N 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- MYPDMHWBPRKWAK-UHFFFAOYSA-N C(CCC)P(CCCC)CCCC.[S] Chemical compound C(CCC)P(CCCC)CCCC.[S] MYPDMHWBPRKWAK-UHFFFAOYSA-N 0.000 claims description 2
- OZDFLNAUZUHNQL-UHFFFAOYSA-N C(CCCCCCC)N(CCCCCCCC)CCCCCCCC.[S] Chemical compound C(CCCCCCC)N(CCCCCCCC)CCCCCCCC.[S] OZDFLNAUZUHNQL-UHFFFAOYSA-N 0.000 claims description 2
- FVDHOWZVGXODEB-UHFFFAOYSA-N C1(=CC=CC=C1)P(C1=CC=CC=C1)C1=CC=CC=C1.[S] Chemical compound C1(=CC=CC=C1)P(C1=CC=CC=C1)C1=CC=CC=C1.[S] FVDHOWZVGXODEB-UHFFFAOYSA-N 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910004262 HgTe Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- 229910000003 Lead carbonate Inorganic materials 0.000 claims description 2
- 229910000861 Mg alloy Inorganic materials 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- NPUVYHNDWLTMSW-UHFFFAOYSA-N OS(O)(=O)=O.OS(O)(=O)=O.OS(O)(=O)=O.[AsH3].[AsH3] Chemical compound OS(O)(=O)=O.OS(O)(=O)=O.OS(O)(=O)=O.[AsH3].[AsH3] NPUVYHNDWLTMSW-UHFFFAOYSA-N 0.000 claims description 2
- 229910002665 PbTe Inorganic materials 0.000 claims description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 2
- 229920000265 Polyparaphenylene Polymers 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- RHKQUGZIMGIIEA-UHFFFAOYSA-N [S].CCCCCCCCP(CCCCCCCC)CCCCCCCC Chemical compound [S].CCCCCCCCP(CCCCCCCC)CCCCCCCC RHKQUGZIMGIIEA-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 150000001345 alkine derivatives Chemical class 0.000 claims description 2
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 claims description 2
- 229910000413 arsenic oxide Inorganic materials 0.000 claims description 2
- JMBNQWNFNACVCB-UHFFFAOYSA-N arsenic tribromide Chemical compound Br[As](Br)Br JMBNQWNFNACVCB-UHFFFAOYSA-N 0.000 claims description 2
- OEYOHULQRFXULB-UHFFFAOYSA-N arsenic trichloride Chemical compound Cl[As](Cl)Cl OEYOHULQRFXULB-UHFFFAOYSA-N 0.000 claims description 2
- 229960002594 arsenic trioxide Drugs 0.000 claims description 2
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 claims description 2
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 claims description 2
- 229940075417 cadmium iodide Drugs 0.000 claims description 2
- XIEPJMXMMWZAAV-UHFFFAOYSA-N cadmium nitrate Inorganic materials [Cd+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XIEPJMXMMWZAAV-UHFFFAOYSA-N 0.000 claims description 2
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 claims description 2
- 229910000331 cadmium sulfate Inorganic materials 0.000 claims description 2
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 claims description 2
- PSIBWKDABMPMJN-UHFFFAOYSA-L cadmium(2+);diperchlorate Chemical compound [Cd+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O PSIBWKDABMPMJN-UHFFFAOYSA-L 0.000 claims description 2
- UJYLYGDHTIVYRI-UHFFFAOYSA-N cadmium(2+);ethane Chemical compound [Cd+2].[CH2-]C.[CH2-]C UJYLYGDHTIVYRI-UHFFFAOYSA-N 0.000 claims description 2
- RCTYPNKXASFOBE-UHFFFAOYSA-M chloromercury Chemical compound [Hg]Cl RCTYPNKXASFOBE-UHFFFAOYSA-M 0.000 claims description 2
- VTXVGVNLYGSIAR-UHFFFAOYSA-N decane-1-thiol Chemical compound CCCCCCCCCCS VTXVGVNLYGSIAR-UHFFFAOYSA-N 0.000 claims description 2
- KTTMEOWBIWLMSE-UHFFFAOYSA-N diarsenic trioxide Chemical compound O1[As](O2)O[As]3O[As]1O[As]2O3 KTTMEOWBIWLMSE-UHFFFAOYSA-N 0.000 claims description 2
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 claims description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical group C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 claims description 2
- XOYUVEPYBYHIFZ-UHFFFAOYSA-L diperchloryloxylead Chemical compound [Pb+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O XOYUVEPYBYHIFZ-UHFFFAOYSA-L 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 229940044658 gallium nitrate Drugs 0.000 claims description 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims description 2
- 229910000373 gallium sulfate Inorganic materials 0.000 claims description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 claims description 2
- SBDRYJMIQMDXRH-UHFFFAOYSA-N gallium;sulfuric acid Chemical compound [Ga].OS(O)(=O)=O SBDRYJMIQMDXRH-UHFFFAOYSA-N 0.000 claims description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 150000002391 heterocyclic compounds Chemical class 0.000 claims description 2
- DLINORNFHVEIFE-UHFFFAOYSA-N hydrogen peroxide;zinc Chemical compound [Zn].OO DLINORNFHVEIFE-UHFFFAOYSA-N 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 229940046892 lead acetate Drugs 0.000 claims description 2
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 claims description 2
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 claims description 2
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- NGYIMTKLQULBOO-UHFFFAOYSA-L mercury dibromide Chemical compound Br[Hg]Br NGYIMTKLQULBOO-UHFFFAOYSA-L 0.000 claims description 2
- 229910000474 mercury oxide Inorganic materials 0.000 claims description 2
- 229910000370 mercury sulfate Inorganic materials 0.000 claims description 2
- SCTINZGZNJKWBN-UHFFFAOYSA-M mercury(1+);fluoride Chemical compound [Hg]F SCTINZGZNJKWBN-UHFFFAOYSA-M 0.000 claims description 2
- UKWHYYKOEPRTIC-UHFFFAOYSA-N mercury(ii) oxide Chemical compound [Hg]=O UKWHYYKOEPRTIC-UHFFFAOYSA-N 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 2
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 claims description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 2
- HSAJRDKFYZAGLU-UHFFFAOYSA-M perchloryloxymercury Chemical compound [Hg+].[O-]Cl(=O)(=O)=O HSAJRDKFYZAGLU-UHFFFAOYSA-M 0.000 claims description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 2
- NMHMNPHRMNGLLB-UHFFFAOYSA-N phloretic acid Chemical compound OC(=O)CCC1=CC=C(O)C=C1 NMHMNPHRMNGLLB-UHFFFAOYSA-N 0.000 claims description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 claims description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 150000003138 primary alcohols Chemical class 0.000 claims description 2
- 150000003333 secondary alcohols Chemical class 0.000 claims description 2
- GOBNDSNLXZYUHQ-UHFFFAOYSA-N selenium;tributylphosphane Chemical compound [Se].CCCCP(CCCC)CCCC GOBNDSNLXZYUHQ-UHFFFAOYSA-N 0.000 claims description 2
- MJNSMKHQBIVKHV-UHFFFAOYSA-N selenium;trioctylphosphane Chemical compound [Se].CCCCCCCCP(CCCCCCCC)CCCCCCCC MJNSMKHQBIVKHV-UHFFFAOYSA-N 0.000 claims description 2
- SCTHSTKLCPJKPF-UHFFFAOYSA-N selenium;triphenylphosphane Chemical compound [Se].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 SCTHSTKLCPJKPF-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052979 sodium sulfide Inorganic materials 0.000 claims description 2
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- 239000011593 sulfur Substances 0.000 claims description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 2
- 150000003509 tertiary alcohols Chemical class 0.000 claims description 2
- IEXRMSFAVATTJX-UHFFFAOYSA-N tetrachlorogermane Chemical compound Cl[Ge](Cl)(Cl)Cl IEXRMSFAVATTJX-UHFFFAOYSA-N 0.000 claims description 2
- GXMNGLIMQIPFEB-UHFFFAOYSA-N tetraethoxygermane Chemical compound CCO[Ge](OCC)(OCC)OCC GXMNGLIMQIPFEB-UHFFFAOYSA-N 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 claims description 2
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 claims description 2
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 claims description 2
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 claims description 2
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 claims description 2
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 claims description 2
- QNLQKURWPIJSJS-UHFFFAOYSA-N trimethylsilylphosphane Chemical compound C[Si](C)(C)P QNLQKURWPIJSJS-UHFFFAOYSA-N 0.000 claims description 2
- ZMBHCYHQLYEYDV-UHFFFAOYSA-N trioctylphosphine oxide Chemical compound CCCCCCCCP(=O)(CCCCCCCC)CCCCCCCC ZMBHCYHQLYEYDV-UHFFFAOYSA-N 0.000 claims description 2
- 229940102001 zinc bromide Drugs 0.000 claims description 2
- 239000011592 zinc chloride Substances 0.000 claims description 2
- 235000005074 zinc chloride Nutrition 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 229940105296 zinc peroxide Drugs 0.000 claims description 2
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 2
- 229910000368 zinc sulfate Inorganic materials 0.000 claims description 2
- 229960001763 zinc sulfate Drugs 0.000 claims description 2
- RXBXBWBHKPGHIB-UHFFFAOYSA-L zinc;diperchlorate Chemical compound [Zn+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O RXBXBWBHKPGHIB-UHFFFAOYSA-L 0.000 claims description 2
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 claims description 2
- 229910016036 BaF 2 Inorganic materials 0.000 claims 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 1
- 235000021314 Palmitic acid Nutrition 0.000 claims 1
- 235000021355 Stearic acid Nutrition 0.000 claims 1
- JAEJDONDKXHMFY-UHFFFAOYSA-L [Hg]I.C(C)(=O)[O-].[Hg+] Chemical compound [Hg]I.C(C)(=O)[O-].[Hg+] JAEJDONDKXHMFY-UHFFFAOYSA-L 0.000 claims 1
- NKMHPGOXBHVKKI-UHFFFAOYSA-N [S].C[Si](C)(C)[S] Chemical compound [S].C[Si](C)(C)[S] NKMHPGOXBHVKKI-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- BDDWDZBALZJCKR-UHFFFAOYSA-J cadmium(2+) dicarbonate Chemical compound C([O-])([O-])=O.[Cd+2].[Cd+2].C([O-])([O-])=O BDDWDZBALZJCKR-UHFFFAOYSA-J 0.000 claims 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 1
- WNAHIZMDSQCWRP-UHFFFAOYSA-N dodecane-1-thiol Chemical compound CCCCCCCCCCCCS WNAHIZMDSQCWRP-UHFFFAOYSA-N 0.000 claims 1
- 239000007772 electrode material Substances 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 claims 1
- GJWAEWLHSDGBGG-UHFFFAOYSA-N hexylphosphonic acid Chemical compound CCCCCCP(O)(O)=O GJWAEWLHSDGBGG-UHFFFAOYSA-N 0.000 claims 1
- 150000002460 imidazoles Chemical class 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 claims 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims 1
- NJGCRMAPOWGWMW-UHFFFAOYSA-N octylphosphonic acid Chemical compound CCCCCCCCP(O)(O)=O NJGCRMAPOWGWMW-UHFFFAOYSA-N 0.000 claims 1
- 235000021313 oleic acid Nutrition 0.000 claims 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims 1
- DWUCCPNOMFYDOL-UHFFFAOYSA-N propyl(sulfanyl)silicon Chemical compound CCC[Si]S DWUCCPNOMFYDOL-UHFFFAOYSA-N 0.000 claims 1
- 239000008117 stearic acid Substances 0.000 claims 1
- 125000000542 sulfonic acid group Chemical group 0.000 claims 1
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 claims 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 claims 1
- HTARNFAKZVZKEI-UHFFFAOYSA-N triphenylsilyloxyaluminum(2+) Chemical compound C=1C=CC=CC=1[Si](C=1C=CC=CC=1)(O[Al+2])C1=CC=CC=C1 HTARNFAKZVZKEI-UHFFFAOYSA-N 0.000 claims 1
- GTLDTDOJJJZVBW-UHFFFAOYSA-N zinc cyanide Chemical compound [Zn+2].N#[C-].N#[C-] GTLDTDOJJJZVBW-UHFFFAOYSA-N 0.000 claims 1
- 239000000243 solution Substances 0.000 description 44
- 239000011162 core material Substances 0.000 description 36
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 30
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 20
- 239000002244 precipitate Substances 0.000 description 20
- 239000011257 shell material Substances 0.000 description 20
- 239000011541 reaction mixture Substances 0.000 description 13
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 12
- 238000005119 centrifugation Methods 0.000 description 10
- 238000010992 reflux Methods 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- 239000006228 supernatant Substances 0.000 description 10
- 238000000295 emission spectrum Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000000376 reactant Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011258 core-shell material Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002707 nanocrystalline material Substances 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 238000003917 TEM image Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 125000003282 alkyl amino group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910001632 barium fluoride Inorganic materials 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 238000001194 electroluminescence spectrum Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YZAZXIUFBCPZGB-QZOPMXJLSA-N (z)-octadec-9-enoic acid Chemical group CCCCCCCC\C=C/CCCCCCCC(O)=O.CCCCCCCC\C=C/CCCCCCCC(O)=O YZAZXIUFBCPZGB-QZOPMXJLSA-N 0.000 description 1
- ZVFQEOPUXVPSLB-UHFFFAOYSA-N 3-(4-tert-butylphenyl)-4-phenyl-5-(4-phenylphenyl)-1,2,4-triazole Chemical compound C1=CC(C(C)(C)C)=CC=C1C(N1C=2C=CC=CC=2)=NN=C1C1=CC=C(C=2C=CC=CC=2)C=C1 ZVFQEOPUXVPSLB-UHFFFAOYSA-N 0.000 description 1
- CLCBBOFNBVCPMU-UHFFFAOYSA-N CCC[SiH2]S Chemical class CCC[SiH2]S CLCBBOFNBVCPMU-UHFFFAOYSA-N 0.000 description 1
- QVJAEHWIKHNTSX-UHFFFAOYSA-N C[Si](C)(C)[S] Chemical compound C[Si](C)(C)[S] QVJAEHWIKHNTSX-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- WRYNUJYAXVDTCB-UHFFFAOYSA-M acetyloxymercury Chemical compound CC(=O)O[Hg] WRYNUJYAXVDTCB-UHFFFAOYSA-M 0.000 description 1
- 229910000905 alloy phase Inorganic materials 0.000 description 1
- DCAYPVUWAIABOU-UHFFFAOYSA-N alpha-n-hexadecene Natural products CCCCCCCCCCCCCCCC DCAYPVUWAIABOU-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 229910000011 cadmium carbonate Inorganic materials 0.000 description 1
- GKDXQAKPHKQZSC-UHFFFAOYSA-L cadmium(2+);carbonate Chemical compound [Cd+2].[O-]C([O-])=O GKDXQAKPHKQZSC-UHFFFAOYSA-L 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- DZQISOJKASMITI-UHFFFAOYSA-N decyl-dioxido-oxo-$l^{5}-phosphane;hydron Chemical compound CCCCCCCCCCP(O)(O)=O DZQISOJKASMITI-UHFFFAOYSA-N 0.000 description 1
- JLHMVTORNNQCRM-UHFFFAOYSA-N ethylphosphine Chemical compound CCP JLHMVTORNNQCRM-UHFFFAOYSA-N 0.000 description 1
- KYYWBEYKBLQSFW-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCC(O)=O KYYWBEYKBLQSFW-UHFFFAOYSA-N 0.000 description 1
- LNZGAWGNDIUUEU-UHFFFAOYSA-N hexylphosphonic acid Chemical compound C(CCCCC)P(O)(O)=O.C(CCCCC)P(O)(O)=O LNZGAWGNDIUUEU-UHFFFAOYSA-N 0.000 description 1
- QKEOZZYXWAIQFO-UHFFFAOYSA-M mercury(1+);iodide Chemical compound [Hg]I QKEOZZYXWAIQFO-UHFFFAOYSA-M 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- IYRGXJIJGHOCFS-UHFFFAOYSA-N neocuproine Chemical compound C1=C(C)N=C2C3=NC(C)=CC=C3C=CC2=C1 IYRGXJIJGHOCFS-UHFFFAOYSA-N 0.000 description 1
- RQFLGKYCYMMRMC-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCCCCCC(O)=O RQFLGKYCYMMRMC-UHFFFAOYSA-N 0.000 description 1
- LOJDCAMNNRALFJ-UHFFFAOYSA-N octylphosphonic acid Chemical compound C(CCCCCCC)P(O)(O)=O.C(CCCCCCC)P(O)(O)=O LOJDCAMNNRALFJ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/56—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing sulfur
- C09K11/562—Chalcogenides
- C09K11/565—Chalcogenides with zinc cadmium
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
- C01P2004/82—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases
- C01P2004/84—Particles consisting of a mixture of two or more inorganic phases two phases having the same anion, e.g. both oxidic phases one phase coated with the other
- C01P2004/88—Thick layer coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims (38)
- 두 종류 이상의 물질로 구성된 나노결정에 있어서, 추가로 상기 두 종류 이상의 물질의 합금(alloy)층을 포함하는 것을 특징으로 하는 다층구조의 나노결정.
- 제 1항에 있어서, 상기 합금층이 두 종류 이상의 물질의 계면에서 형성된 합금층(alloy interlayer)인 것을 특징으로 하는 나노결정.
- 제 1항에 있어서, 상기 합금층이 물질 조성의 기울기를 갖는 합금층(gradient alloy)인 것을 특징으로 하는 나노결정.
- 제 1항에 있어서, 상기 합금층이 두 종류 이상의 물질의 계면에서 코어 (core)까지 형성된 합금층인 것을 특징으로 하는 나노결정.
- 제 1항에 있어서, 상기 합금층이 두 종류 이상의 물질의 계면에서 쉘 (shell)까지 형성된 합금층인 것을 특징으로 하는 나노결정.
- 제 1항에 있어서, 상기 나노결정을 구성하는 물질이 II-VI족 또는 III-V족 및 IV-VI족 반도체 화합물 및 이들의 혼합물로 이루어진 군에서 선택되는 것을 특징으로 하는 나노결정.
- 제 1항에 있어서, 상기 나노결정을 구성하는 물질이 CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe, AlN, AlP, AlAs, GaN, GaP, GaAs, InN, InP, InAs 또는 및 이들의 혼합물로 이루어진 군에서 선택되는 것을 특징으로 하는 나노결정.
- 제 1항에 있어서, 상기 나노결정의 형태가 구형, 정사면체(tetrahedron), 원통형, 막대형, 삼각형, 원판형(disc), 트리포드(tripod), 테트라포드(tetrapod), 큐브(cube), 박스(box), 스타(star), 튜브(tube)로 이루어진 군에서 선택되는 것을 특징으로 하는 나노결정.
- 하기의 단계를 포함하는 다층구조의 나노결정의 제조방법:(a) 제 1 나노결정을 제조하는 단계;(b) 전단계에서 수득된 제 1 나노결정 표면 위에 제 1 나노결정과 다른 종류의 제 2 나노결정을 성장시키는 단계; 및(c) 상기 제 1 나노결정과 제 2 나노결정 사이의 계면에서 확산을 통해 합금층을 형성하는 단계.
- 제 9항에 있어서, 상기 (b) 및 (c) 단계를 1회 이상 반복하는 것을 특징으로 하는 방법.
- 제 9항 또는 제10항에 있어서, 상기 (a) 단계의 제 1 나노결정 및 상기 (b) 단계의 제 2 나노결정이 금속 전구체와 V족 또는 VI족 전구체를 각각 용매 및 분산제에 넣고, 이들을 혼합하여 반응시켜 형성되는 것을 특징으로 하는 방법.
- 제 9항 또는 제10항에 있어서, 상기 합금층이 제 1 나노결정과 제 2 나노결정의 합금으로 제 1 나노결정과 제 2 나노결정의 계면에 형성된 합금층(alloy interlayer)인 것을 특징으로 하는 방법.
- 제 9항 또는 제10항에 있어서, 상기 합금층이 제 1 나노결정과 제 2 나노결정의 합금으로 물질 조성의 기울기를 갖는(gradient alloy) 것을 특징으로 하는 방법.
- 제 9항 또는 제10항에 있어서, 상기 합금층이 두 종류 이상의 물질의 계면에서 코어 (core)까지 형성된 합금층인 것을 특징으로 하는 방법.
- 제 9항 또는 제10항에 있어서, 상기 합금층이 두 종류 이상의 물질의 계면에서 쉘 (shell)까지 형성된 합금층인 것을 특징으로 하는 방법.
- 제 11항에 있어서, 상기 금속 전구체가 디메틸아연(dimethyl zinc), 디에틸아연(diethyl zinc), 아연아세테이트(zinc acetate), 아연아세틸아세토네이트(zinc acetylacetonate), 아연아이오다이드(zinc iodide), 아연브로마이드(zinc bromide), 아연클로라이드(zinc chloride), 아연플루오라이드(zinc fluoride), 아연카보네이트(zinc carbonate), 아연시아나이드(zinc cyanide), 아연나이트레이트(zinc nitrate), 아연옥사이드(zinc oxide), 아연퍼옥사이드(zinc peroxide), 아연 퍼클로레이트(zinc perchlorate), 아연설페이트(zinc sulfate), 디메틸카드뮴(dimethyl cadmium), 디에틸카드뮴(diethyl cadmium), 카드뮴아세테이트(cadmium acetate), 카드뮴아세틸아세토네이트(cadmium acetylacetonate), 카드뮴아이오다이드(cadmium iodide), 카드뮴브로마이드(cadmium bromide), 카드뮴클로라이드(cadmium chloride), 카드뮴플루오라이드(cadmium fluoride), 카드뮴카보네이트(cadmium carbonate), 카드뮴나이트레이트(cadmium nitrate), 카드뮴옥사이드(cadmium oxide), 카드뮴퍼클로레이트(cadmium perchlorate), 카드뮴포스파이드(cadmium phosphide), 카드뮴설페이트(cadmium sulfate), 수은아세테이트(mercury acetate), 수은아이오다이드(mercury iodide), 수은브로마이드(mercury bromide), 수은클로라이드(mercury chloride), 수은플루오라이드(mercury fluoride), 수은시아나이드(mercury cyanide), 수은나이트레이트(mercury nitrate), 수은옥사이드(mercury oxide), 수은퍼클로레이트(mercury perchlorate), 수은설페이트(mercury sulfate), 납아세테이트(lead acetate), 납브로마이드(Lead bromide), 납클로라이드(Lead chloride), 납플루오라이드(Lead fluoride), 납옥사이드 (Lead oxide), 납퍼클로레이트(Lead perchlorate), 납나이트레이트(Lead nitrate), 납설페이트(Lead sulfate), 납카보네이트(Lead carbonate), 주석아세테이트(Tin acetate), 주석비스아세틸아세토네이트(Tin bisacetylacetonate), 주석브로마이드 (Tin bromide), 주석클로라이드(Tin chloride), 주석플루오라이드(Tin fluoride), 주석옥사이드(Tin oxide), 주석설페이트(Tin sulfate), 게르마늄테트라클로라이드 (Germanium tetrachloride), 게르마늄옥사이드(Germanium oxide), 게르마늄에톡사이드 (Germanium ethoxide), 갈륨아세틸아세토네이트(Gallium acetylacetonate), 갈륨클로라이드(Gallium chloride), 갈륨플루오라이드(Gallium fluoride), 갈륨옥사이드(Gallium oxide), 갈륨나이트레이트(Gallium nitrate), 갈륨설페이트(Gallium sulfate), 인듐클로라이드(Indium chloride), 인듐옥사이드 (Indium oxide), 인듐나이트레이트(Indium nitrate), 인듐설페이트(Indium sulfate)로 이루어진 군에서 선택되는 것을 특징으로 하는 방법.
- 제 11항에 있어서, 상기 VI족 또는 V족 원소 화합물이 헥산 싸이올, 옥탄 싸이올, 데칸 싸이올, 도데칸 싸이올, 헥사데칸 싸이올, 머캡토 프로필 실란 등과 같은 알킬 싸이올 화합물, 설퍼-트리옥틸포스핀(S-TOP), 설퍼-트리부틸포스핀(S-TBP), 설퍼-트리페닐포스핀(S-TPP), 설퍼-트리옥틸아민(S-TOA), 트리메틸실릴 설퍼(trimethylsilyl sulfur), 황화 암모늄, 황화 나트륨, 셀렌-트리옥틸포스핀(Se-TOP), 셀렌-트리부틸포스핀(Se-TBP), 셀렌-트리페닐포스핀(Se-TPP), 텔루르-트리옥틸포스핀(Te-TOP), 텔루르-트리부틸포스핀(Te-TBP), 텔루르-트리페닐포스핀(Te-TPP), 트리메틸실릴 포스핀(trimethylsilyl phosphine) 및 트리에틸포스핀, 트리부틸포스핀, 트리옥틸포스핀, 트리페닐포스핀, 트리시클로헥실포스핀을 포함하는 알킬 포스핀(alkyl phosphine), 알세닉 옥사이드(Arsenic oxide), 알세닉 클로라이드(Arsenic chloride), 알세닉 설페이트(Arsenic sulfate), 알세닉 브로마이드(Arsenic bromide), 알세닉 아이오다이드(Arsenic iodide), 나이트릭 옥사이드 (Nitroud oxide), 나이트릭산(Nitric acid), 암모늄 나이트레이트(Ammonium nitrate)로 이루어진 군에서 선택되는 것을 특징으로 하는 방법.
- 제 11항에 있어서, 상기 용매가 탄소수 6 내지 22의 일차 알킬 아민, 이차 알킬 아민 및 삼차 알킬 아민; 탄소수 6 내지 22의 일차 알코올, 이차 알코올 및 삼차 알코올; 탄소수 6 내지 22의 케톤 및 에스테르; 탄소수 6 내지 22의 질소 또는 황을 포함한 헤테로 고리 화합물(heterocyclic compound); 탄소수 6 내지 22의 알칸, 알켄, 알킨; 트리옥틸포스핀, 트리옥틸포스핀 옥사이드로 이루어진 군에서 선택되는 것을 특징으로 하는 방법.
- 제 11항에 있어서, 상기 분산제가 말단에 카르복실기를 (carboxyl acid functional group) 가진 탄소수 6 내지 22의 알칸 또는 알켄, 말단에 포스포닉 산기 (phosphonic acid functional group)기를 가진 탄소수 6 내지 22의 알칸 또는 알켄, 또는 말단에 술폰산기 (sulfonic acid functional group)를 가진 탄소수 6 내지 22의 알칸 또는 알켄과 말단에 아민 (-NH2)기를 가진 탄소수 6 내지 22의 알칸 또는 알켄으로 이루어진 군에서 선택되는 것을 특징으로 하는 방법.
- 제 11항에 있어서, 상기 분산제가 올레인산 (oleic acid), 스테아르산 (stearic acid), 팔미트산 (palmitic acid), 헥실 포스포늄산 (hexyl phosphonicacid), n-옥틸 포스포늄산 (n-octyl phosphonicacid), 테트라데실 포스포늄산 (tetradecyl phosphonicacid), 옥타데실포스포늄산 (octadecyl phosphonic acid), n-옥틸 아민 (n-octyl amine), 헥사데실아민 (hexadecyl amine)으로 이루어진 군에서 선택되는 것을 특징으로 하는 방법.
- 제 9항 또는 제 10항에 있어서, 상기 (a) 및 (b) 단계의 반응온도가 각각 100℃ 내지 460℃인 것을 특징으로 하는 방법.
- 제 9항 또는 제 10항에 있어서, 상기 (a) 및 (b) 단계의 반응시간이 각각 5초 내지 4시간인 것을 특징으로 하는 방법.
- 제 9항 또는 제 10항에 있어서, 상기 (b) 단계의 반응온도를 단계적으로 상승시키거나 하강시키는 것을 특징으로 하는 방법.
- 제 9항 또는 제 10항에 있어서, 상기 (b) 단계의 금속 전구체의 농도가 0.001M내지 2M인 것을 특징으로 하는 방법.
- 제 9항 또는 제 10항에 있어서, 상기 (b) 단계의 금속 전구체에 대한 VI족 또는 V족 원소의 몰비가 비가 100:1내지 1:50인 것을 특징으로 하는 방법.
- 제 9항 또는 제 10항의 방법으로 제조한 다층구조의 나노결정.
- 제 26 항에 있어서, 나노결정의 형태가 상기 나노결정의 형태가 구형, 정사면체 (tetrahedron), 원통형, 막대형, 삼각형, 원판형 (disc), 트리포드(tripod), 테트라포드(tetrapod), 큐브(cube), 박스(box), 스타(star), 튜브 (tube) 로 이루어진 군에서 선택되는 것을 특징으로 하는 나노결정.
- 제 26항에 있어서, 최대발광피크가 350nm 내지 700nm이고, 발광효율이 0.1% 내지 100%인 것을 특징으로 하는 나노결정.
- 제 26항에 따른 다층구조의 나노결정을 포함하는 소자.
- 제 29항에 있어서, 상기 소자가 유무기 하이브리드 전기 발광 소자인 것을 특징으로 하는 소자.
- 제 29항에 있어서, 상기 유무기 하이브리드 전가 발광 소자가(i) 기판;(ii) 정공 주입 전극;(iii) 정공 수송층;(iv) 발광층;(v) 전자 수송층; 및(vi) 전자 주입 전극을 순차적으로 포함하며, 상기 발광층이 다층 구조의 반도체 나노결정을 포함하는 것을 특징으로 하는 유무기 하이브리드 전기 발광 소자.
- 제 31 항에 있어서, 상기 발광층과 상기 전자 수송층 사이에 정공 억제층을 추가로 포함하는 것을 특징으로 하는 소자.
- 제 31 항에 있어서, 상기 기판이 유리 기판, 폴리에틸렌테레프탈레이트 기판, 폴리카보네이트 기판으로 이루어진 군에서 선택되는 것을 특징으로 하는 소자.
- 제 31항에 있어서, 상기 정공 주입 전극 재료가 ITO(Indium Tin Oxide), IZO(Indium Zinc Oxide), 니켈(Ni), 백금(Pt), 금(Au), 은(Ag), 이리듐 (Ir) 등의 전도성 금속 또는 이들의 산화물로 구성되는 군에서 선택되는 것임을 특징으로 하는 소자.
- 제 31항에 있어서, 상기 정공 수송층의 재료가 폴리(3, 4-에틸렌디오펜)(PEDOT)/폴리스티렌 파라술포네이트(PSS), 폴리-N-비닐카르바졸(poly-N-vinylcarbazole) 유도체, 폴리페닐렌비닐렌(polyphenylenevinylene) 유도체, 폴리파라페닐렌(polyparaphenylene) 유도체, 폴리메타아크릴레이트 (polymethaacrylate) 유도체, 폴리(9,9-옥틸플루오렌)(poly(9,9-octylfluorene)) 유도체, 폴리(스파이로-플루오렌)(poly(spiro-fluorene)) 유도체, TPD(N,N'-Bis- (3-메틸페닐)-N,N'-비스-(페닐)-벤지딘)으로 이루어진 군에서 선택되는 것임을 특징으로 하는 소자.
- 제 31항에 있어서, 상기 전자 수송층의 재료가 옥사졸계 화합물, 이소옥사졸계 화합물, 트리아졸계 화합물, 이소티아졸계 화합물, 옥시디아졸계 화합물, 티아디아졸계 화합물, 페릴렌 (perylene)계 화합물, 트리스(8-히드록시퀴놀린)-알루미늄(Alq3), 비스(2-메틸-8-퀴놀라토)(p-페닐-페놀라토)알루미늄(Balq), 비스(2-메틸-8-퀴놀리네이토)(트리페닐실록시)알루미늄(III)(Salq)등의 알루미늄 착물로 이루어진 군에서 선택되는 것임을 특징으로 하는 소자.
- 제 31항에 있어서, 상기 전자 주입 전극이 I, Ca, Ba, Ca/Al, LiF/Ca, LiF/Al, BaF2/Al, BaF2/Ca/Al, Al, Mg, Ag:Mg 합금으로 이루어진 군에서 선택되는 것을 특징으로 하는 소자.
- 제 32 항에 있어서, 상기 정공 억제층의 재료가 3-페닐-4-(1´-나프틸)-5-페닐-1, 2, 4-트리아졸(TAZ), 2, 9-디메틸-1, 10-페난트롤린 (BCP), 페난트롤린(phenanthrolines)계 화합물, 이미다졸계 화합물, 트리아졸 (triazoles)계 화합물, 옥사디아졸(oxadiazoles)계 화합물, 알루미늄 착물로 이루어진 군에서 선택되는 것임을 특징으로 하는 소자.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05256775.7A EP1666562B1 (en) | 2004-11-11 | 2005-11-02 | Interfused nanocrystals and method of preparing the same |
EP10186278A EP2292718A3 (en) | 2004-11-11 | 2005-11-02 | Interfused nanocrystals and method of preparing the same |
JP2005322668A JP4800006B2 (ja) | 2004-11-11 | 2005-11-07 | 多層構造のナノ結晶およびその製造方法 |
US11/269,685 US20060236918A1 (en) | 2004-11-11 | 2005-11-09 | Interfused nanocrystals and method of preparing the same |
US11/822,677 US8247795B2 (en) | 2004-11-11 | 2007-07-09 | Interfused nanocrystals and method of preparing the same |
JP2011149538A JP5602104B2 (ja) | 2004-11-11 | 2011-07-05 | 多層構造のナノ結晶およびその製造方法 |
US14/614,475 US9637682B2 (en) | 2004-11-11 | 2015-02-05 | Interfused nanocrystals and method of preparing the same |
US15/581,041 US10202545B2 (en) | 2004-11-11 | 2017-04-28 | Interfused nanocrystals and method of preparing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20040091894 | 2004-11-11 | ||
KR1020040091894 | 2004-11-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060050750A true KR20060050750A (ko) | 2006-05-19 |
KR100722086B1 KR100722086B1 (ko) | 2007-05-25 |
Family
ID=37150035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050079284A KR100722086B1 (ko) | 2004-11-11 | 2005-08-29 | 다층구조의 나노결정 및 그의 제조방법 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5602104B2 (ko) |
KR (1) | KR100722086B1 (ko) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100841186B1 (ko) * | 2007-03-26 | 2008-06-24 | 삼성전자주식회사 | 다층 쉘 구조의 나노결정 및 그의 제조방법 |
KR101159853B1 (ko) * | 2005-09-12 | 2012-06-25 | 삼성전기주식회사 | 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정 |
WO2013040365A2 (en) * | 2011-09-16 | 2013-03-21 | Massachusetts Institute Of Technology | Highly luminescent semiconductor nanocrystals |
KR20140070770A (ko) * | 2012-11-27 | 2014-06-11 | 엘지디스플레이 주식회사 | 코어/쉘 구조의 양자막대 |
WO2014088211A1 (ko) * | 2012-12-04 | 2014-06-12 | 서울대학교 산학협력단 | 나노 결정, 그 제조방법, 및 이를 포함하는 소자 |
WO2014104713A1 (ko) * | 2012-12-24 | 2014-07-03 | 주식회사 노마디엔 | 금 마감 자성 마이크로스피어 |
WO2014196735A1 (ko) * | 2013-06-03 | 2014-12-11 | 한국화학연구원 | 아연-실버-인듐-설파이드 코어와, 상기 코어를 둘러싸는 쉘을 포함하는 코어-쉘 구조 발광 나노입자 및 이의 제조방법 |
WO2015012442A1 (ko) * | 2013-07-23 | 2015-01-29 | 서강대학교산학협력단 | 액상과 액상 계면에서 덴드리머 형태 또는 덴드리머 유래의 금속 나노 구조체를 제조하는 방법 및 이에 따라 제조된 덴드리머 형태 또는 덴드리머 유래의 금속 나노 구조체 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101462658B1 (ko) | 2008-12-19 | 2014-11-17 | 삼성전자 주식회사 | 반도체 나노 결정 및 그 제조 방법 |
WO2013157495A1 (ja) * | 2012-04-20 | 2013-10-24 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンス素子の製造方法 |
KR102164628B1 (ko) | 2013-08-05 | 2020-10-13 | 삼성전자주식회사 | 나노 결정 합성 방법 |
JP6345533B2 (ja) * | 2014-08-12 | 2018-06-20 | 株式会社トクヤマ | 窒化アルミニウム系粒子及びその製造方法 |
CN108699434A (zh) * | 2016-01-19 | 2018-10-23 | 纳米系统公司 | 具有GaP和AlP壳的INP量子点及其制造方法 |
CN110028963B (zh) | 2018-01-11 | 2024-01-02 | 三星电子株式会社 | 量子点、量子点-聚合物复合物、和显示装置 |
WO2019160165A1 (ja) * | 2018-02-13 | 2019-08-22 | 株式会社村田製作所 | 磁性構造体 |
CN111162187B (zh) * | 2019-12-31 | 2022-07-05 | 广东聚华印刷显示技术有限公司 | 双异质结纳米棒及其制备方法及发光二极管 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6344272B1 (en) | 1997-03-12 | 2002-02-05 | Wm. Marsh Rice University | Metal nanoshells |
US6322901B1 (en) * | 1997-11-13 | 2001-11-27 | Massachusetts Institute Of Technology | Highly luminescent color-selective nano-crystalline materials |
IL138471A0 (en) * | 2000-09-14 | 2001-10-31 | Yissum Res Dev Co | Novel semiconductor materials and their uses |
US20030066998A1 (en) * | 2001-08-02 | 2003-04-10 | Lee Howard Wing Hoon | Quantum dots of Group IV semiconductor materials |
KR100438408B1 (ko) * | 2001-08-16 | 2004-07-02 | 한국과학기술원 | 금속간의 치환 반응을 이용한 코어-쉘 구조 및 혼합된합금 구조의 금속 나노 입자의 제조 방법과 그 응용 |
US7560160B2 (en) | 2002-11-25 | 2009-07-14 | Materials Modification, Inc. | Multifunctional particulate material, fluid, and composition |
US7056471B1 (en) * | 2002-12-16 | 2006-06-06 | Agency For Science Technology & Research | Ternary and quarternary nanocrystals, processes for their production and uses thereof |
US6972046B2 (en) | 2003-01-13 | 2005-12-06 | International Business Machines Corporation | Process of forming magnetic nanocomposites via nanoparticle self-assembly |
JP2004303592A (ja) * | 2003-03-31 | 2004-10-28 | Mitsubishi Chemicals Corp | 電界発光素子及び電界発光素子の製造方法 |
US7981667B2 (en) * | 2003-05-07 | 2011-07-19 | Indiana University Research And Technology Corporation | Alloyed semiconductor quantum dots and concentration-gradient alloyed quantum dots, series comprising the same and methods related thereto |
-
2005
- 2005-08-29 KR KR1020050079284A patent/KR100722086B1/ko active IP Right Grant
-
2011
- 2011-07-05 JP JP2011149538A patent/JP5602104B2/ja active Active
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101159853B1 (ko) * | 2005-09-12 | 2012-06-25 | 삼성전기주식회사 | 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정 |
KR100841186B1 (ko) * | 2007-03-26 | 2008-06-24 | 삼성전자주식회사 | 다층 쉘 구조의 나노결정 및 그의 제조방법 |
US10577716B2 (en) | 2007-03-26 | 2020-03-03 | Samsung Electronics Co., Ltd. | Multilayer nanocrystal structure and method for producing the same |
US9926643B2 (en) | 2007-03-26 | 2018-03-27 | Samsung Electronics Co., Ltd. | Multilayer nanocrystal structure and method for producing the same |
US9714379B2 (en) | 2011-09-16 | 2017-07-25 | Massachusetts Institute Of Technology | Highly luminescent semiconductor nanocrystals |
WO2013040365A2 (en) * | 2011-09-16 | 2013-03-21 | Massachusetts Institute Of Technology | Highly luminescent semiconductor nanocrystals |
WO2013040365A3 (en) * | 2011-09-16 | 2013-05-10 | Massachusetts Institute Of Technology | Highly luminescent semiconductor nanocrystals |
US9162882B2 (en) | 2011-09-16 | 2015-10-20 | Massachusetts Institute Of Technology | Highly luminescent semiconductor nanocrystals |
KR20140070770A (ko) * | 2012-11-27 | 2014-06-11 | 엘지디스플레이 주식회사 | 코어/쉘 구조의 양자막대 |
WO2014088211A1 (ko) * | 2012-12-04 | 2014-06-12 | 서울대학교 산학협력단 | 나노 결정, 그 제조방법, 및 이를 포함하는 소자 |
KR101462005B1 (ko) * | 2012-12-04 | 2014-11-19 | 서울대학교산학협력단 | 나노 결정, 그 제조방법, 및 이를 포함하는 소자 |
WO2014104713A1 (ko) * | 2012-12-24 | 2014-07-03 | 주식회사 노마디엔 | 금 마감 자성 마이크로스피어 |
WO2014196735A1 (ko) * | 2013-06-03 | 2014-12-11 | 한국화학연구원 | 아연-실버-인듐-설파이드 코어와, 상기 코어를 둘러싸는 쉘을 포함하는 코어-쉘 구조 발광 나노입자 및 이의 제조방법 |
WO2015012442A1 (ko) * | 2013-07-23 | 2015-01-29 | 서강대학교산학협력단 | 액상과 액상 계면에서 덴드리머 형태 또는 덴드리머 유래의 금속 나노 구조체를 제조하는 방법 및 이에 따라 제조된 덴드리머 형태 또는 덴드리머 유래의 금속 나노 구조체 |
Also Published As
Publication number | Publication date |
---|---|
JP2011256106A (ja) | 2011-12-22 |
KR100722086B1 (ko) | 2007-05-25 |
JP5602104B2 (ja) | 2014-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100722086B1 (ko) | 다층구조의 나노결정 및 그의 제조방법 | |
JP4800006B2 (ja) | 多層構造のナノ結晶およびその製造方法 | |
US10577716B2 (en) | Multilayer nanocrystal structure and method for producing the same | |
US7651674B2 (en) | Method for manufacturing metal sulfide nanocrystals using thiol compound as sulfur precursor | |
KR100853087B1 (ko) | 나노결정, 그의 제조방법 및 그를 포함하는 전자소자 | |
KR101159853B1 (ko) | 다층구조 나노결정의 제조방법 및 그에 의해 수득된 나노결정 | |
KR100621308B1 (ko) | 다중 파장에서 발광하는 황화 카드뮴 나노 결정의 제조방법 및 그에 의해 수득된 황화 카드뮴 나노 결정 | |
US10202545B2 (en) | Interfused nanocrystals and method of preparing the same | |
KR100657891B1 (ko) | 반도체 나노결정 및 그 제조방법 | |
Singh et al. | Magic-sized CdSe nanoclusters: a review on synthesis, properties and white light potential |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130422 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140424 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150422 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160422 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170420 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180423 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20190418 Year of fee payment: 13 |