KR20060046811A - Organic electro-luminescence device and method for fabricating of the same - Google Patents

Abstract

An organic electroluminescent device and a method of manufacturing the same are provided, and the height of the planarization film and the surface of the pixel definition film pattern are formed to be the same with respect to the substrate, thereby simultaneously reducing the step by the capacitor and the step between the pixel electrode and the pixel definition film. Provided are an organic electroluminescent device and a method of manufacturing the same, which can prevent a transfer failure caused by a step of a substrate when forming an organic film layer pattern by a thermal transfer method.

Organic electroluminescent element, planarization film, pixel definition film, step, laser thermal transfer method

Description

Organic electroluminescent device and method for manufacturing the same {organic electro-luminescence device and method for fabricating of the same}

1 is a layout diagram of a conventional organic electroluminescent device.

2A and 2B are cross-sectional views illustrating a conventional manufacturing process of an organic EL device, and are cross-sectional views taken along line II ′ of one unit pixel of FIG. 1.

3A to 3D are cross-sectional views illustrating an organic electroluminescent device and a method of manufacturing the same according to an embodiment of the present invention, and are sectional views taken along line II ′ of one unit pixel of FIG. 1.

-Brief description of drawing symbols-

100: insulated substrate 115: thin film transistor

120 semiconductor layer 140 gate electrode

160a, 160b: source / drain electrodes 180, 180 ': planarization film

200: pixel electrode 210, 210 ': pixel defining layer pattern

215: capacitor 220: capacitor auxiliary electrode

240: capacitor lower electrode 260: capacitor upper electrode

320 ': organic layer pattern 330: upper electrode

The present invention relates to an organic electroluminescent device and a method of manufacturing the same, and more particularly, to an organic electroluminescent device having a structure in which an organic film can be easily formed by a laser transfer method by lowering a step difference of a substrate which is not overcome by a planarization film. The manufacturing method is related.

With the advent of the high information age, there is an increasing demand for obtaining fast and accurate information in the hand, and the development of a display device that is light and thin, easy to carry, and has a high information processing speed is rapidly being made. Conventional CRTs have high weight, volume, and power consumption, and LCDs have technical limitations on process complexity, narrow viewing angles, contrast ratios, and large area. Organic electroluminescent devices that solve these problems are rapidly rising as next generation displays.

The organic electroluminescent device is a self-luminous type in which electrons and holes are recombined in the light emitting layer to generate light by applying a voltage to the organic film including the organic light emitting layer. The response speed is the same as the CRT, and it is advantageous in terms of power consumption.

In general, the organic EL device is composed of various layers such as a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer between the anode and the cathode, and the three primary colors of R, G, and B in the organic EL device. Full color can be realized by patterning the light emitting layer.

The multilayer organic film may form an organic film layer pattern using a vacuum deposition method or a conventional optical etching method using a shadow mask, but in the case of the vacuum deposition method, it is difficult to form the organic film in a fine pattern, so it is not easy to realize a full color. In the case of the photoetching method, there is a problem in that light emission characteristics such as lifetime and efficiency are deteriorated due to damage of the organic layer by the developer or the etchant.

Accordingly, a method of patterning an organic film using laser induced thermal imaging (LITI) has been introduced as a method to solve this problem.

The laser thermal transfer method is a method in which light is emitted from a light source and absorbed by a light-to-heat conversion layer of a donor film to convert light into thermal energy, and the organic material formed on the transfer layer is transferred to a substrate by the converted thermal energy.

The pattern formation method of the organic electroluminescent device by the laser thermal transfer method is disclosed in Korean Patent Registration No. 10-0342653, and has already been disclosed in US Patent Nos. 5,998,085, 6,214,520 and 6,114,085.

FIG. 1 is a layout diagram illustrating a general organic electroluminescent device, in which a portion of a pixel including red (R), green (G), and blue (B) unit pixels of the organic electroluminescent device is defined.

Referring to FIG. 1, a scan line 410 arranged in one direction, a data line 420 intersecting with each other while being insulated from the scan line 410, and intersecting with each other while being insulated from the scan line 410, and cross the data line. A common power supply voltage line 430 is positioned parallel to 420. By the scan line 410, the data line 420 and the common power supply voltage line 430, a plurality of unit pixels, for example, red (R), green (G) and blue (B) unit pixels Is defined.

Accordingly, each unit pixel receives a data signal applied to the data line 420 according to the signal applied to the scan line 410, for example, a data voltage and a voltage applied to the common power line 430. A capacitor 470 that accumulates charges according to a difference and a signal due to the charge accumulated in the capacitor 470 are input to the driving thin film transistor 460 through the switching thin film transistor 450. Subsequently, the driving thin film transistor 460 that receives the data signal sends an electrical signal to the organic light emitting diode 490 having the organic light emitting layer between the pixel electrode 480, the upper electrode, and the two electrodes to emit light.

2A and 2B are cross-sectional views illustrating a conventional manufacturing process of an organic EL device, and are cross-sectional views taken along line II ′ of one unit pixel of FIG. 1.

Referring to FIG. 2A, a buffer layer 11 is formed on an insulating substrate 10, and a thin film transistor 20 and a capacitor 30 are formed on the buffer layer 11.

The thin film transistor 20 includes a semiconductor layer 21 formed on the buffer layer 11, a gate insulating layer 12, a gate electrode 22, an interlayer insulating layer 13, and a contact hole 24 formed in the gate insulating layer and the interlayer insulating layer. Source / drain electrodes 23. 23 ′ electrically connected to the semiconductor layer 21 through.

The capacitor 30 includes a capacitor lower electrode 31 formed of a material of a gate electrode on the gate insulating film, and a capacitor upper electrode 32 formed of a material of a source / drain electrode on the interlayer insulating film.

Subsequently, the passivation layer 14 is formed over the entire surface of the interlayer insulating layer 13 including the thin film transistor 20 and the capacitor 30, and the planarization layer 15 is formed on the passivation layer 14. The via hole 41 for exposing a predetermined portion of the drain electrode 23 'is then formed.

The pixel electrode 42 is formed to contact the exposed portion of the drain electrode 23 ′ through the via hole 41.

In this case, the pixel defining layer pattern 16 is formed to cover the pixel electrode 42 having the curved shape of the via hole 41 and have an opening exposing a portion of the pixel electrode 42.

As a result, the substrate 50 including the thin film transistor, the capacitor, and the pixel electrode is formed.

On the other hand, the donor substrate 60 for laser transfer which has the transfer layer 62 on the base material layer 61 is manufactured.

Subsequently, a laser is irradiated to a predetermined portion of the donor substrate 60 after lamination by facing the pixel region on the pixel electrode 42 of the substrate 50 and the transfer layer 62 of the donor substrate for laser transfer.

In this case, although the planarization film 15 is applied to overcome the step by the thin film transistor 20 and the capacitor 30 of the substrate, the step is not overcome even though the planarization film is formed because the capacitor has a high thickness. . In addition, the use of double capacitors for increasing the capacitance or the capacity tends to be large, resulting in higher step heights. Due to this step, the donor substrate and the substrate are not easily laminated. As a result, the transfer energy of the donor substrate decreases because the transfer energy is increased by increasing the height H1 of the pixel electrode and the transfer layer of the pixel region to which the transfer layer is to be transferred during the transfer process. In addition, the degradation of the organic film may be promoted by the high transfer energy, and as a result, the lifespan of the organic EL device may be shortened or the efficiency may be reduced.

In addition, the donor substrate may not be in close contact with the substrate due to the step defined by the pixel definition layer of the substrate, thereby causing an open defect in which the organic layer is opened. That is, a short phenomenon can occur because the organic film is not properly transferred to the edge portion of the substrate and the organic film is cut off. Due to such edge open defects, the efficiency and lifespan of the organic EL device may be reduced, which may cause a problem in that a full color cannot be realized.

As shown in FIG. 2B, an organic layer pattern 62 ′ including at least a light emitting layer transferred from a donor substrate is formed on the pixel region on the pixel electrode 42 of the substrate. Subsequently, by forming the upper electrode 17 as a common electrode on the organic layer pattern 62 ′, an organic EL device may be manufactured.

As described above, when the organic layer layer pattern is formed by the laser thermal transfer method, not only the transfer energy efficiency decreases due to the step difference of the substrate, but also the edge open defect (E) and the damage of the organic layer reduce the efficiency and life of the organic EL device. This can lead to problems that make a full color implementation impossible.

The technical problem to be achieved by the present invention is to supplement the above problems of the prior art, an object of the present invention is to improve the step difference of the substrate to increase the transfer energy efficiency during the transfer process by the laser thermal transfer method, preventing the transfer failure The present invention provides an organic electroluminescent device and a method of manufacturing the same, which improve efficiency and lifespan.

The configuration of the present invention for achieving the above object is a substrate formed with a thin film transistor;

A planarization film formed over the entire surface of the substrate including the thin film transistor:

A pixel electrode formed in a predetermined region on the planarization layer and connected to any one of a source / drain electrode of the thin film transistor through a via hole formed in the planarization layer;

A pixel definition formed on the planarization film and the pixel electrode and having an opening exposing at least a portion of the upper part of the pixel electrode and etched to expose at least a portion of the planarization film in a region where the pixel electrode is not formed; Membrane pattern;

An organic layer pattern formed on the pixel electrode exposed by the opening and including at least an emission layer; And

It provides an organic electroluminescent device comprising an upper electrode formed on the organic film layer pattern.

In another aspect, the present invention comprises the steps of providing a substrate;

Forming a thin film transistor on the substrate;

Forming a planarization film over the entire surface of the substrate including the thin film transistor;

Forming a pixel electrode connected to any one of the source / drain electrodes of the thin film transistor through a via hole formed on the planarization layer;

Forming a pixel definition layer pattern on the planarization layer including the pixel electrode, the pixel defining layer pattern having an opening exposing a predetermined portion of the pixel electrode;

Removing the pixel definition layer pattern to expose a predetermined portion of the planarization layer in a region where the pixel electrode is not formed;

Forming an organic layer pattern including at least an emission layer on the pixel electrode exposed through the opening; And

It provides a method of manufacturing an organic EL device comprising the step of forming an upper electrode on the organic layer pattern.

In this case, the height of the exposed planarization layer and the height of the surface of the pixel definition layer pattern may be the same based on the substrate. Here, the pixel defining layer pattern and the exposed planarization layer may have a thickness of about 10 to about 2500 kV from an upper surface of the pixel electrode. More preferably, the pixel definition layer pattern and the surface of the exposed planarization layer may have a thickness of about 10 to about 1000 micrometers from an upper surface of the pixel electrode.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, lengths, thicknesses, and the like of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.

3D is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention, and is a cross-sectional view taken along line II ′ of one unit pixel of FIG. 1.

As shown in FIG. 3D, the thin film transistor 115 and the capacitor 215 are positioned on the substrate 100. In more detail, a buffer layer 110 may be disposed on the substrate 100 to prevent impurities flowing out from the substrate 100. The semiconductor layer 120, which is a polysilicon layer, is disposed on the buffer layer. Here, the capacitor auxiliary electrode 220 may be further included to improve the capacitance away from the semiconductor layer on the buffer layer. A gate insulating layer 130 is positioned on the semiconductor layer 120 and the capacitor auxiliary electrode 220. A gate electrode 140 is disposed on the semiconductor layer 120 on the gate insulating layer, and an upper portion of the capacitor auxiliary electrode. In the capacitor lower electrode 240 is positioned. An interlayer insulating layer 150 is disposed on the gate electrode and the capacitor lower electrode, and source / drain electrodes 160b and 160a are positioned on the semiconductor layer on the interlayer insulating layer, thereby forming a thin film transistor 115. The capacitor 215 on which the upper electrode 260 is positioned is formed on the capacitor lower electrode.

Subsequently, the passivation layer 170 may be positioned on the thin film transistor 115 and the capacitor 215. The planarization layer 180 'is positioned on the passivation layer.

 Here, the planarization layer 180 ′ may be formed of one material selected from the group consisting of polyamide resin, polyimide resin, acrylic resin, benzocyclobutyne resin, PBO, and silicone resin, or a material in which two or more materials are combined. Can be.

The pixel electrode 190 is electrically connected to the drain electrode 160a of the thin film transistor on the planarization layer 180 '. A pixel definition layer pattern 210 ′ having an opening exposing a predetermined portion of the pixel electrode and exposing the planarization layer positioned at the top of the substrate is exposed.

In this case, the height of the exposed planarization layer and the height of the surface of the pixel definition layer pattern may be the same based on the substrate. At this time, the surface of the pixel defining layer pattern 210 'and the planarization layer 180' has a thickness d of 10 m or less from an upper surface of the pixel electrode 200, and an edge A of the pixel electrode. When the portion of is exposed and the organic film is transferred and formed, the organic film may be broken to cause a short defect. In addition, when the thickness is more than 2500 kV, the donor substrate may not be in close contact with the substrate due to the step difference between the pixel electrode 190 and the pixel definition layer pattern 210 ', as described above. An open defect that opens can occur and cause a short defect. The pixel definition layer pattern 210 'and the planarization layer 180' may have a thickness d of about 10 to about 1000 microns from an upper surface of the pixel electrode.

In this case, the pixel defining layer pattern 210 ′ may include polystyrene, polymethylmethacrylate, polyacrylonitrile, polyamide, polyimide, polyarylether, heterocyclic polymer, parylene, fluorine polymer, epoxy resin, benzo It may be formed of one material selected from the group consisting of cyclobutyne-based resin, siloxane-based resin and silane resin, or a combination of two or more materials.

Subsequently, at least an organic layer layer pattern 320 ′ including an emission layer is positioned on the pixel electrode exposed through the opening, and an upper electrode 330 is positioned on the organic layer layer pattern.

Here, the organic layer pattern 320 ′ may further include at least one layer selected from the group consisting of a hole injection layer, a hole transport layer, a hole suppression layer, and an electron injection layer.

Hereinafter, a method of manufacturing an organic EL device according to an embodiment of the present invention will be described.

3A to 3D are cross-sectional views illustrating a method of manufacturing an organic light emitting diode according to an exemplary embodiment of the present invention, and are sectional views taken along line II ′ of one unit pixel of FIG. 1.

Referring to FIG. 3A, a buffer layer 110 is selected from the group consisting of a silicon oxide film, a silicon nitride film, and a silicon oxide film / silicon nitride film in order to provide a substrate 100 and prevent impurities from flowing out from the substrate 100. It is preferable to form

After depositing an amorphous silicon film on the buffer layer 110, the amorphous silicon film is crystallized through a conventional crystallization method and then patterned to form a semiconductor layer 120. At this time, in this embodiment. It is more desirable to form a double capacitance in order to improve the capacitance. Accordingly, the capacitor auxiliary electrode 220 may be simultaneously formed when the semiconductor layer is formed.

A gate insulating layer 130 is formed over the entire surface of the substrate including the semiconductor layer 120 and the capacitor auxiliary electrode 220. Subsequently, a conductive layer is formed on the gate insulating layer and then patterned to form a gate electrode 140 at a portion spaced apart from the semiconductor layer 120, and a capacitor lower portion at a portion spaced apart from the capacitor auxiliary electrode 220. An electrode 240 is formed.

Thereafter, an ion doping treatment is performed on the semiconductor layer 120 to form the drain region 120a, the source region 120b, and the channel region 120c, and then the gate electrode 140 and the capacitor lower electrode 240. An interlayer insulating film 150 is formed on the gate insulating film including a).

Subsequently, the gate insulating layer 130 and the interlayer insulating layer 150 are etched to expose the first contact hole 125a and the second contact hole 125b exposing predetermined portions of the drain region 120a and the source region 120b. To form.

Source / drain electrodes 160b and 160a and the capacitor lower electrode 240 electrically connected to the source / drain regions 120b and 120a on the interlayer insulating layer 150 including the contact holes 125a and 125b, respectively. The capacitor upper electrode 260 is formed at an upper portion of the capacitor.

The passivation layer 170 is formed on the entire surface of the interlayer insulating layer 150 including the source / drain electrodes 160b and 160a and the capacitor upper electrode 260. Here, the protective film 170 may be selected from one of a stacked film of a silicon oxide film, a silicon nitride film, and a silicon oxide film / silicon nitride film.

The planarization layer 180 is formed on the passivation layer 170 to overcome the step difference. Here, the planarization layer may prevent diffuse reflection caused by the step difference between the thin film transistor and the capacitor as the organic layer is thinly formed in a subsequent process. However, although the planarization film is applied to overcome the step difference caused by the thin film transistor and the capacitor of the substrate, the leveling of the portion where the capacitor is formed is not completely overcome because the planarization film is not perfect.

Subsequently, a via hole 190 exposing one of the source / drain electrodes 160b and 160a is formed on the planarization layer 180, and then the source / drain electrodes 160b and 160a are formed on the planarization layer 180. The pixel electrode 200 connected to any one may be formed. In the exemplary embodiment of the present invention, the pixel electrode 200 is formed to be connected to the drain electrode through the via hole.

 A pixel definition layer 210 may be formed on the entire surface of the substrate on which the pixel electrode 200 is formed to cover the curved pixel electrode. The pixel definition layer preferably has a thickness of 1.5 to 2 탆 to completely planarize not only the curved pixel electrode but also the step unovercome by the planarization layer.

Thereafter, the pixel defining layer 210 is patterned to form an opening 220 that exposes a predetermined portion of the pixel electrode.

Subsequently, as shown in FIG. 3B, the pixel defining layer pattern 210 ′ is etched entirely through II-II ′ by a conventional etching method to expose a predetermined portion of the planarization layer in a region where the pixel electrode is not formed. In this case, in the process of etching the pixel definition layer pattern 210 ′, a predetermined portion of the planarization layer of a high region may be simultaneously etched based on the substrate.

As a result, the planarization layer may be exposed at the highest region with respect to the substrate in the planarization layer region.

In addition, it is preferable to etch the pixel definition layer pattern 210 ′ such that the exposed height of the planarization layer 180 ′ and the height of the surface of the pixel definition layer pattern 210 ′ are the same. In this case, the thickness d of the pixel definition layer pattern 210 ′ and the exposed planarization layer 180 ′ is preferably 10 to 2500 μm from an upper surface of the pixel electrode 200. At this time, the surface of the pixel defining layer pattern 210 'and the planarization layer 180' has a thickness d of 10 m or less from an upper surface of the pixel electrode 200, and an edge A of the pixel electrode. When the portion of is exposed and the organic film is transferred and formed, the organic film may be broken to cause a short defect. In addition, when the thickness is more than 2500 GPa, the donor substrate may not be in close contact with the substrate due to the step difference between the pixel electrode 200 and the pixel definition layer pattern 210 ', as described above. An open defect that opens can occur and cause a short defect. The pixel definition layer pattern 210 'and the planarization layer 180' may have a thickness d of about 10 to about 1000 microns from an upper surface of the pixel electrode.

Here, the etching method may be performed by dry etching using an etching apparatus such as reactive ion etching, plasma etching, inductively coupled plasma etching, or other plasma forming apparatus or wet etching using a developing solution.

As a result, the pixel definition layer may be formed to be thick, so that the step unovercome by the planarization layer may be flattened, and the pixel definition layer, the pattern, and the planarization may be made to solve the step difference of the pixel definition layer due to the opening. By simultaneously etching a predetermined portion of the film, the substrate 250 having improved flatness may be formed.

Thereafter, an organic layer pattern including at least a light emitting layer is formed on the pixel electrode 200 exposed through the opening. The organic layer pattern may be formed by selecting one of laser thermal transfer, spin coating, and low molecular deposition.

Here, the organic film is advantageous to realize a large area pixel area and does not damage the organic film, and is preferably formed by laser thermal transfer as a dry process capable of fine patterning.

Referring to FIG. 3C, the formation of the organic layer pattern in the laser thermal transfer method will be described in more detail as follows.

First, a donor substrate 300 having at least a transfer layer 320 on a substrate layer 310 is prepared. Subsequently, the donor substrate 300 is disposed to face the pixel region of the substrate 250 and laminated, and then a laser is irradiated to a predetermined region of the donor substrate.

At this time, as the lower step of the substrate 250 is relaxed and the planarization is improved, the adhesion of the substrate and the donor substrate 300 is easy, and the height H2 of the pixel region of the substrate and the donor substrate is lowered so that the laser is small. The organic film layer pattern may be formed using thermal transfer energy.

Subsequently, as shown in FIG. 3D, the transfer layer 320 of the donor substrate is transferred to the pixel region of the substrate by laser thermal transfer energy to form an organic layer pattern 320 ′. Here, the organic layer pattern may further include one or more selected from the group consisting of a hole injection layer, a hole transport layer, a hole suppression layer and an electron injection layer.

The organic layer may be formed by spin coating or vapor deposition, or may be simultaneously formed during laser transfer by laminating one of the organic light emitting layer and the organic layer when forming the transfer layer of the donor substrate.

Subsequently, the upper electrode 330 is formed on the organic layer pattern, and although not shown in the drawing, the upper electrode 330 may be encapsulated with a metal can and an encapsulation substrate to complete the organic EL device.

As mentioned above. The organic electroluminescent device according to the present invention can easily form an organic film by laser thermal transfer by completely removing the step of the substrate.

In addition, according to the present invention, an organic electroluminescent device having excellent quality may be manufactured by solving a problem in that short shortage, lifetime, and efficiency of the organic electroluminescent device, which may be generated by the step difference of the substrate, are solved.

In addition, according to the present invention, in the case of forming the organic layer pattern by the laser thermal transfer method, it is possible to maximize the efficiency of the laser thermal transfer energy by forming the organic layer layer pattern by minimizing the laser thermal transfer energy, and to damage the organic layer To prevent the organic EL device having improved lifespan and efficiency.

In addition, according to the present invention, as the organic electroluminescent device is manufactured, a display capable of realizing a full color can be manufactured.

While the foregoing has been described with reference to preferred embodiments of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (16)

A substrate on which a thin film transistor is formed; A planarization film formed over the entire surface of the substrate including the thin film transistor: A pixel electrode formed in a predetermined region on the planarization layer and connected to any one of a source / drain electrode of the thin film transistor through a via hole formed in the planarization layer; A pixel definition formed on the planarization film and the pixel electrode and having an opening exposing at least a portion of the upper part of the pixel electrode and etched to expose at least a portion of the planarization film in a region where the pixel electrode is not formed; Membrane pattern; An organic layer pattern formed on the pixel electrode exposed by the opening and including at least an emission layer; And And an upper electrode formed on the organic layer pattern. The method of claim 1, The height of the exposed planarization layer and the height of the surface of the pixel definition layer pattern are the same based on the substrate. The method of claim 1, And the exposed planarization layer is the highest region in relation to the substrate in the planarization layer region. The method of claim 1, The exposed planarization film is an organic electroluminescent device, characterized in that a capacitor is formed below. The method of claim 2, And the surface of the pixel definition layer pattern and the exposed planarization layer have a thickness of 10 to 2500 mV from an upper surface of the pixel electrode. The method of claim 5, And the surface of the pixel definition layer pattern and the exposed planarization layer have a thickness of 10 to 1000 Å from an upper surface of the pixel electrode. The method of claim 1, The flattening film is formed of a polyamide resin, a polyimide resin, an acrylic resin, a benzocyclobutyne resin, a PBO and a silicone-based resin, and an organic electric field formed of a material in which two or more materials are combined. Light emitting element. The method of claim 1, The pixel definition layer is polystyrene, polymethyl methacrylate, polyacrylonitrile, polyamide, polyimide, polyarylether, heterocyclic polymer, parylene, fluorine polymer, epoxy resin, benzocyclobutyne resin, siloxane An organic electroluminescent device, characterized in that formed of a material selected from the group consisting of a resin and a silane resin, or a combination of two or more materials. The method of claim 1, The organic layer pattern may further comprise at least one layer selected from the group consisting of a hole injection layer, a hole transport layer, a hole suppression layer and an electron injection layer. Providing a substrate; Forming a thin film transistor on the substrate; Forming a planarization film over the entire surface of the substrate including the thin film transistor; Forming a pixel electrode connected to any one of a source / drain electrode of the thin film transistor through a via hole formed on the planarization layer; Forming a pixel definition layer pattern on the planarization layer including the pixel electrode, the pixel defining layer pattern having an opening exposing a predetermined portion of the pixel electrode; Removing the pixel definition layer pattern to expose a predetermined portion of the planarization layer in a region where the pixel electrode is not formed; Forming an organic layer pattern including at least an emission layer on the pixel electrode exposed through the opening; And And forming an upper electrode on the organic film layer pattern. The method of claim 10, And etching the pixel definition layer pattern such that the exposed height of the planarization layer and the height of the surface of the pixel definition layer pattern are the same with respect to a substrate. The method of claim 10, And etching the pixel definition layer pattern to expose the highest region of the planarization layer with respect to the substrate. The method of claim 10, The exposed planarization film is a manufacturing method of the organic electroluminescent device, characterized in that a capacitor is formed on the lower portion. The method of claim 11, And etching the pixel definition layer pattern such that the exposed planarization layer and the surface of the pixel definition layer pattern have a thickness of about 10 to 2500 micrometers from an upper surface of the pixel electrode. The method of claim 10, The pixel defining layer pattern is etched using a dry etching method or a wet etching method. The method of claim 10, The organic film layer pattern is formed by a laser thermal transfer method of manufacturing an organic EL device.

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