KR100782465B1 - Donor Substrate for Laser Induced Thermal Imaging and Fabrication methode for Organic Electroluminescence Display Device using the same - Google Patents

Abstract

The present invention relates to a laser thermoelectric donor substrate and a method of manufacturing an organic light emitting display device using the same. More specifically, the laser thermoelectric method improves the transfer efficiency by adjusting the thickness of the transfer layer when the lower electrode is formed by laser thermal transfer. A donor substrate for use and a method of manufacturing an organic light emitting display device using the same.

The present invention is a substrate layer; A photothermal conversion layer on the base layer; A buffer layer on the photothermal conversion layer; And a transfer layer on the buffer layer, the transfer layer including pixel electrodes of a flat panel display device, wherein the transfer layer has a thickness of 50 mW or more and less than 300 mW. will be.

In addition, the present invention provides a substrate, the lower electrode is formed by a laser thermal transfer method using a donor substrate including a substrate layer, a photothermal conversion layer, a buffer layer and a transfer layer on the substrate, at least one on the lower electrode Forming an organic layer including the light emitting layer and forming an upper electrode on the organic layer, wherein the transfer layer is formed to have a thickness of 50 mW or more and less than 300 mW. It is about.

 Donor substrate, conductive material, transfer layer thickness

Description

Donor Substrate for Laser Induced Thermal Imaging and Fabrication methode for Organic Electroluminescence Display Device using the same}

1 is a cross-sectional view of a laser thermal transfer donor substrate according to Embodiment 1 of the present invention.

2A and 2B are cross-sectional views sequentially illustrating the manufacture of an organic light emitting display device according to a second embodiment of the present invention.

3 and 4 are photographs showing laser thermal transfer using a donor substrate prepared according to an experimental example and a comparative example.

<Brief Description of Drawings>

100: base material layer 110: photothermal conversion layer

120: buffer layer 130: transfer layer

130a: lower electrode 200: substrate

270 organic layer 280 upper electrode

The present invention relates to a laser thermoelectric donor substrate and a method of manufacturing an organic light emitting display device using the same. More specifically, the laser thermoelectric method improves the transfer efficiency by adjusting the thickness of the transfer layer when the lower electrode is formed by laser thermal transfer. A method of manufacturing a donor substrate and an organic light emitting display device is used.

Flat panel display devices are being used as display devices replacing cathode ray-ray tube display devices due to their light weight and thinness. Representative examples of such a flat panel display include a liquid crystal display (LCD) and an organic light emitting diode (OLED). Among these, the organic light emitting display device has superior luminance and viewing angle characteristics as compared to the liquid crystal display device and does not require a back light.

Such an organic light emitting display device combines electrons and holes injected through a cathode and an anode to an organic thin film to recombine to form excitons, and a specific wavelength is determined by energy from the excitons formed. The display device using the phenomenon that light is generated.

The organic light emitting display device may further include an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer to facilitate the inflow of electrons and holes into the light emitting layer between the cathode and the anode. Vacuum deposition, photoetching, laser thermal transfer, and the like are used to form the multilayer organic film and electrodes such as a cathode and an anode.

The laser thermal transfer method requires at least a light source such as a laser, a substrate on which elements are formed (hereinafter referred to as an element substrate) and a donor substrate, and the donor substrate includes a base layer, a photothermal conversion layer and a transfer layer. The donor substrate is laminated on the device substrate with the transfer layer facing the device substrate, and a laser beam is irradiated to a predetermined area on the substrate layer. The laser beam irradiated onto the substrate layer is absorbed by the photothermal conversion layer and converted into thermal energy, and the transfer layer is transferred onto the device substrate by the thermal energy. As a result, a transfer layer pattern is formed on the device substrate.

However, when the conductive material is transferred by the laser thermal transfer method, a buffer layer is formed in consideration of the adhesive force between the photothermal conversion layer and the transfer layer, and the transfer thickness is reduced due to the thickness of the buffer layer. have.

Accordingly, the present invention is to solve the problems of the prior art as described above, by adjusting the thickness of the transfer layer when forming the lower electrode by the laser thermal transfer method, the laser thermal transfer donor substrate to improve the transfer efficiency and the organic field using the same It is an object of the present invention to provide a method of manufacturing a light emitting display device.

The object of the present invention is a base layer; A photothermal conversion layer on the base layer; A buffer layer on the photothermal conversion layer; And a transfer layer on the buffer layer, the transfer layer including a pixel electrode of the flat panel display device, wherein the transfer layer has a thickness of 50 mW or more and less than 300 mW. Is achieved.

In addition, the object of the present invention is to provide a substrate, and to form a lower electrode on the substrate by a laser thermal transfer method using a donor substrate including a substrate layer, a photothermal conversion layer, a buffer layer and a transfer layer, Forming an organic layer including at least one light emitting layer on the upper layer, and forming an upper electrode on the organic layer, wherein the transfer layer is formed to a thickness of 50 mW or more and less than 300 mW. It is achieved by the manufacturing method of.

Details of the above objects and technical configurations and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention. In addition, in the drawings, the length, thickness, etc. of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.

Example 1

1 is a cross-sectional view of a laser thermal transfer donor substrate according to Embodiment 1 of the present invention.

Referring to FIG. 1, a substrate layer 100 is provided and a photothermal conversion layer 110 is formed on the substrate layer 100. The substrate layer 100 should have transparency in order to transmit light to the photothermal conversion layer 110, and may be made of a material having a constant optical property and sufficient mechanical stability as a supporting substrate. The base layer 100 may be made of glass or one or more polymer materials selected from the group consisting of polyesters such as polyethylene terephthalate (PET), polyacryl, polyepoxy, polyethylene, and polystyrene. More preferably, the base layer may be polyethylene terephthalate.

The photothermal conversion layer 110 absorbs light in the infrared-visible light region and converts a part of the light into heat. The photothermal conversion layer 110 should have a constant optical density and include a light absorbing material. The photothermal conversion layer 110 may be a metal film including aluminum oxide or aluminum sulfide as the light absorbing material, and a polymer organic film including carbon black, graphite, or infrared dye as the light absorbing material. In this case, the metal film may be vacuum deposition, electron beam deposition, or sputtering, and the organic film may be a conventional film coating method, such as gravure, extrusion, spin, and knife. ) Can be formed by one of the coating method.

Subsequently, a buffer layer 120 is formed on the photothermal conversion layer 110. The buffer layer 120 not only serves to control the adhesive force with the transfer layer 130 formed in a subsequent process so that the transfer pattern characteristics can be improved, and the organic gas in the material formed under the transfer layer 130 It serves to prevent foreign matter from spreading to the transfer layer 130. The material of the buffer layer 120 is not particularly limited, and poly methyl styrene may be used.

Next, the transfer layer 130 including the lower electrode of the flat panel display device is formed on the buffer layer 120. The transfer layer 130 is aluminum, magnesium, magnesium-silver, calcium, calcium-silver, a transparent electrode single layer, a transparent electrode and a double layer of silver or silver alloy, a transparent electrode and a double layer of aluminum or aluminum alloy, and a transparent electrode And the transparent electrode may be formed of one selected from the group consisting of silver, silver alloy, aluminum or an aluminum alloy triple layer, and the transparent electrode may be formed of ITO, IZO, or the like. The transfer layer 130 is formed to a thickness of less than 50Å 300mm. If the transfer layer 130 is formed to be less than 50 GPa, the sheet resistance of the transfer layer 130 is high, and thus it is difficult to use the electrode of the flat panel display. In addition, when the transfer layer 130 is formed to 300 GHz or more, there is a problem that the transfer efficiency of the transfer layer is lowered.

Example 2

2A and 2B are cross-sectional views sequentially illustrating the manufacture of an organic light emitting display device according to a second embodiment of the present invention.

In the second embodiment, the lower electrode of the organic light emitting display device is formed by the laser thermal transfer method using the donor substrate of the first embodiment. However, the upper electrode of the organic light emitting display device may be formed. .

Referring to FIG. 2A, a buffer layer 210 is formed on a substrate 200 formed of glass, synthetic resin, stainless steel, or the like. The buffer layer 210 is not required to be formed, but is preferably formed to prevent diffusion of impurities in the substrate 200. The buffer layer 210 may be formed using a silicon oxide film (SiO ₂ ), a silicon nitride film (SiNx), or a stacked structure thereof.

Next, the semiconductor layer 220 including the source / drain region 222 and the channel region 224, the gate insulating layer 230, the gate electrode 238, and the interlayer may be formed on the buffer layer 210 in a conventional manner. A thin film transistor including an insulating layer 240 and a source / drain electrode 242 is formed.

Subsequently, the planarization layer 250 may be formed on the substrate 200 including the thin film transistor. The planarization film 250 may be an organic insulating film such as acrylic or an inorganic insulating film such as silicon oxide. Subsequently, a via hole 255 is formed in the planarization layer 250 to expose one of the source / drain electrodes 242, for example, a portion of the drain electrode, by photo etching the planarization layer 250. The via hole 255 is for connecting the lower electrode 130a and the drain electrode 354 to be formed in a subsequent process. Alternatively, a passivation layer (not shown) may be formed under the planarization layer 250, or only a passivation layer may be formed without the planarization layer 250.

Subsequently, a donor including a base layer 100, a photothermal conversion layer 110, a buffer layer 120, and a transfer layer 130 prepared in Example 1 on the substrate 200 on which the planarization film 250 is formed. The substrate is laminated. As described in Example 1, the transfer layer 130 is made of aluminum, magnesium, magnesium-silver, calcium, calcium-silver, transparent electrode single layer, a double layer of transparent electrode and silver or silver alloy, transparent electrode and aluminum or aluminum alloy. The double layer, and between the transparent electrode and the transparent electrode may be formed of one selected from the group consisting of silver, silver alloy, aluminum or triple layer formed aluminum alloy, the transparent electrode may be formed of ITO, IZO and the like. The transfer layer has a thickness of 50 kPa or more and less than 300 kPa. As described above, when the transfer layer 130 is formed to be less than 50 GPa, the sheet resistance of the conductive material, which is the transfer material, increases, making it difficult to use the electrode of the organic light emitting display device. In addition, when the transfer layer 130 is formed to 300 GHz or more, there is a problem that the transfer efficiency of the transfer layer is lowered.

 Next, as shown in Figure 2b, by irradiating a light source such as a laser beam to a predetermined region of the base layer 100, by transferring the transfer layer 130 and the buffer layer 120 containing a conductive material, The lower electrode 130a is formed on the substrate 200.

Subsequently, an organic layer 270 including at least one light emitting layer is formed on the lower electrode 130a. In this case, the buffer layer 130 formed by the laser thermal transfer method may be formed using a material of a conventional hole injection layer or an electron injection layer, so that the buffer layer 130 may be used as a hole injection layer or an electron injection layer.

Subsequently, an upper electrode is formed on the organic layer to complete the organic light emitting display device according to the present invention.

The above-described method for manufacturing a laser transfer donor substrate and an organic light emitting display device using the same include forming a lower electrode of the organic light emitting display device using a laser thermal transfer method. When the lower electrode is formed, the thickness of the transfer layer of the donor substrate is adjusted to 50 mW or less and 300 mW or less, thereby improving the transfer efficiency of the lower electrode by the laser thermal transfer method.

Hereinafter, the present invention will be exemplified by the following experimental example, but the protection scope of the present invention is not limited by the following experimental example.

Experimental Example

A photothermal conversion layer is formed on the substrate layer by a conventional method, and a buffer layer is formed of Alq ₃ on the photothermal conversion layer. A transfer layer is formed of aluminum (Al) on the buffer layer, and the transfer layer is formed to a thickness of 100 GPa.

A donor substrate including the substrate layer, the photothermal conversion layer, the buffer layer, and the transfer layer is transferred onto an acceptor substrate by laser thermal transfer.

(Comparative example)

A photothermal conversion layer is formed on the substrate layer by a conventional method, and a buffer layer is formed of Alq ₃ on the photothermal conversion layer. A transfer layer is formed of aluminum (Al) on the buffer layer, and the transfer layer is formed to a thickness of 300 GPa.

3 and 4 are photographs showing a state in which the transfer layer 300 is transferred to the acceptor substrate 400 by using the donor substrate according to the above experimental example and the comparative example.

Referring to FIG. 3, in the donor substrate according to the experimental example, there was an error in alignment between the donor substrate and the acceptor substrate 300, but the transfer layer 400 was transferred without an open portion. 4, in the case of the transfer layer 400 according to the comparative example, it can be seen that the transfer layer was not properly transferred onto the acceptor substrate 300.

As a result, the donor substrate according to the experimental example is improved in transfer efficiency compared to the donor substrate according to the comparative example, and thus, when the laser thermal transfer donor substrate according to the present invention is used, an organic light emitting display device having improved transfer efficiency may be provided. Can be.

Accordingly, the method of manufacturing a laser thermal transfer donor substrate and an organic light emitting display device using the same according to the present invention has an effect of improving the transfer efficiency by controlling the thickness of the transfer layer of the donor substrate when the lower electrode is formed by the laser thermal transfer method. have.

Claims (8)

Base layer; A photothermal conversion layer on the base layer; A buffer layer on the photothermal conversion layer; And A transfer layer on the buffer layer, the transfer layer including a pixel electrode of the flat panel display device; And the pixel electrode is made of a conductive material, and the transfer layer has a thickness of 50 mW or more and less than 300 mW. The method of claim 1, The pixel electrode may be aluminum, magnesium, magnesium-silver, calcium, calcium-silver, transparent electrode monolayer, double layer of transparent electrode and silver or silver alloy, double layer of transparent electrode and aluminum or aluminum alloy, and between transparent electrode and transparent electrode And a silver, silver alloy, aluminum, or a laser thermal transfer donor substrate, characterized in that the one selected from the group consisting of a triple layer formed aluminum alloy. The method of claim 1, And the buffer layer is Alq ₃ . Providing a substrate, Forming a lower electrode on the substrate by a laser thermal transfer method using a donor substrate including a substrate layer, a photothermal conversion layer, a buffer layer, and a transfer layer, Forming an organic layer including at least one light emitting layer on the lower electrode, Forming an upper electrode on the organic layer; And the transfer layer has a thickness of 50 mW or more and less than 300 mW. The method of claim 4, wherein The transfer layer may be aluminum, magnesium, magnesium-silver, calcium, calcium-silver, transparent electrode monolayer, double layer of transparent electrode and silver or silver alloy, double layer of transparent electrode and aluminum or aluminum alloy, and between transparent electrode and transparent electrode And silver, silver alloy, aluminum, or a method for manufacturing an organic light emitting display device, characterized in that one selected from the group consisting of triple layers formed with aluminum alloys. The method of claim 4, wherein The buffer layer is Alq3, the manufacturing method of the organic light emitting display device.  The method of claim 4, wherein The organic layer includes a hole injection layer, the buffer layer is a manufacturing method of an organic light emitting display device, characterized in that formed with the same material as the hole injection layer. The method of claim 4, wherein And the organic layer comprises an electron injection layer, and the buffer layer is formed of the same material as the electron injection layer.

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