KR20060010518A - 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 - Google Patents
연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 Download PDFInfo
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- KR20060010518A KR20060010518A KR1020040059246A KR20040059246A KR20060010518A KR 20060010518 A KR20060010518 A KR 20060010518A KR 1020040059246 A KR1020040059246 A KR 1020040059246A KR 20040059246 A KR20040059246 A KR 20040059246A KR 20060010518 A KR20060010518 A KR 20060010518A
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- slurry
- polishing
- abrasive particles
- particles
- porosity
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- 239000002002 slurry Substances 0.000 title claims abstract description 121
- 238000005498 polishing Methods 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 title claims description 14
- 238000007517 polishing process Methods 0.000 title description 3
- 239000002245 particle Substances 0.000 claims abstract description 93
- 238000000034 method Methods 0.000 claims abstract description 64
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 52
- 238000001354 calcination Methods 0.000 claims abstract description 39
- 230000008569 process Effects 0.000 claims abstract description 38
- 239000000654 additive Substances 0.000 claims abstract description 19
- 239000002270 dispersing agent Substances 0.000 claims abstract description 19
- 239000006185 dispersion Substances 0.000 claims abstract description 17
- 238000003801 milling Methods 0.000 claims abstract description 11
- 229920006318 anionic polymer Polymers 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 238000002156 mixing Methods 0.000 claims description 15
- 230000000996 additive effect Effects 0.000 claims description 11
- GHLITDDQOMIBFS-UHFFFAOYSA-H cerium(3+);tricarbonate Chemical group [Ce+3].[Ce+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O GHLITDDQOMIBFS-UHFFFAOYSA-H 0.000 claims description 11
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 11
- 239000012498 ultrapure water Substances 0.000 claims description 11
- 239000002243 precursor Substances 0.000 claims description 9
- 230000014759 maintenance of location Effects 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 7
- 239000006061 abrasive grain Substances 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 125000005587 carbonate group Chemical group 0.000 claims description 3
- 238000001953 recrystallisation Methods 0.000 claims description 3
- 238000009736 wetting Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 13
- 238000002360 preparation method Methods 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 5
- 238000013461 design Methods 0.000 abstract description 3
- -1 macroparticles Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 15
- 230000007423 decrease Effects 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 10
- 230000008859 change Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000002776 aggregation Effects 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010079 rubber tapping Methods 0.000 description 2
- 239000011163 secondary particle Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000010532 solid phase synthesis reaction Methods 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000002498 deadly effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010316 high energy milling Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000010951 particle size reduction Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
정체 시간(Holding Time) | 공극률 (%) |
20min | 20.61 |
1Hour | 20.02 |
3Hour | 17.44 |
9Hour | 15.62 |
정체 시간(Holding Time) | 결정립 크기(Grain Size) (nm) |
20min | 15.7 |
1Hour | 19.4 |
3Hour | 22.1 |
9Hour | 25.0 |
구분 | 하소 정체 시간(Calcination Holding Time) | 산화막 연마 속도(Å/min) | 질화막 연마 속도(Å/min) | 산화막:질화막 연마비 (선택비) | WIWNU(%) | 산화막 잔류 입자(>0.20㎛, #) | 스크래치(#) |
제 1 슬러리 | 20 min | 2210 | 45 | 49.1 | 1.1 | 130 | 1 |
제 2 슬러리 | 1 Hour | 2417 | 47 | 51.4 | 1.1 | 150 | 1 |
제 3 슬러리 | 3 Hour | 2588 | 49 | 52.8 | 1.0 | 210 | 2 |
제 4 슬러리 | 9 Hour | 2602 | 52 | 50.0 | 1.2 | 314 | 5 |
비교예 | 종래기술 | 2150 | 49 | 42.9 | 1.1 | 780 | 9 |
Claims (12)
- 연마 입자를 포함하는 연마용 슬러리로서,상기 연마 입자의 공극률를 제어하여 단단한 입자의 발생을 최소화하는 연마용 슬러리.
- 제 1 항에 있어서, 상기 연마 입자의 공극률은 상기 연마 입자의 하소 시 최고 온도하에서 정체되는 시간에 따라 제어되는 연마용 슬러리.
- 제 1 항에 있어서, 상기 연마 입자의 공극률은 5 내지 40% 인 연마용 슬러리.
- 제 1 항 내지 제 3 항 중 어느 하나의 항에 있어서, 상기 연마 입자는 세리아인 연마용 슬러리.
- 제 2 항에 있어서, 상기 최고 온도하에서 정체되는 시간은 10분 내지 10시간 인 연마용 슬러리.
- 제 2 항에 있어서, 상기 최고 온도하에서 정체되는 시간은 10분 내지 2시간 인 연마용 슬러리.
- 제 2 항에 있어서, 상기 최고 온도는 500 내지 1000℃ 범위인 연마용 슬러리.
- 하소 최고 온도에서 소정 시간 정체하는 하소 공정을 통해 연마 입자를 제조하는 단계; 및초순수, 분산제 및 첨가제를 상기 연마 입자에 혼합 및 첨가하여 슬러리를 제조하는 단계를 포함하는 연마용 슬러리의 제조 방법.
- 제 8 항에 있어서, 상기 연마 입자의 제조는 단계는,원료 전구체를 마련하는 단계;결정수 및 흡착수를 제거하는 단계;탄산염 기능기를 제거하는 단계; 및재결정을 실시하는 단계를 포함하는 연마용 슬러리의 제조 방법.
- 제 9 항에 있어서, 상기 원료 전구체는 세륨 카보네이트인 연마용 슬러리의 제조 방법.
- 제 8 항에 있어서, 상기 초순수, 상기 분산제 및 상기 첨가제를 상기 연마 입자에 혼합 및 첨가하여 상기 슬러리를 제조하는 단계는,상기 초순수에 상기 연마 입자를 혼합 및 습식시키고, 밀링하여 초기 슬러리를 형성하는 단계;음이온계 고분자 분산제를 상기 초기 슬러리에 첨가 혼합하는 단계;약산, 약염기 등의 상기 첨가제를 상기 분산제가 혼합된 상기 초기 슬러리에 첨가하는 단계; 및상기 분산체 및 상기 첨가제가 혼합된 상기 초기 슬러리의 고형하중을 조정하고, 거대 입자를 제거하는 단계를 포함하는 연마용 슬러리의 제조 방법.
- 연마 입자의 공극률를 제어하여 단단한 입자의 발생을 최소한 슬러리를 사용하여 소정이 기판을 연마하는 기판의 연마 방법.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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KR1020040059246A KR100613836B1 (ko) | 2004-07-28 | 2004-07-28 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
TW094124647A TWI273632B (en) | 2004-07-28 | 2005-07-21 | Polishing slurry, method of producing same, and method of polishing substrate |
CN2007101358108A CN101092543B (zh) | 2004-07-28 | 2005-07-27 | 抛光浆料及其制备方法和抛光基板的方法 |
US11/193,094 US20060032149A1 (en) | 2004-07-28 | 2005-07-28 | Polishing slurry, method of producing same, and method of polishing substrate |
US12/333,170 US8361177B2 (en) | 2004-07-28 | 2008-12-11 | Polishing slurry, method of producing same, and method of polishing substrate |
US12/333,179 US20090100765A1 (en) | 2004-07-28 | 2008-12-11 | Polishing slurry, method of producing same, and method of polishing substrate |
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KR1020040059246A KR100613836B1 (ko) | 2004-07-28 | 2004-07-28 | 연마용 슬러리 및 이의 제조 방법 및 기판 연마 방법 |
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KR20060010518A true KR20060010518A (ko) | 2006-02-02 |
KR100613836B1 KR100613836B1 (ko) | 2006-09-04 |
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Cited By (1)
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KR20200038437A (ko) * | 2017-12-11 | 2020-04-13 | 주식회사 케이씨텍 | Cmp용 슬러리 조성물 및 이에 포함된 연마입자 |
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JPH11181403A (ja) | 1997-12-18 | 1999-07-06 | Hitachi Chem Co Ltd | 酸化セリウム研磨剤及び基板の研磨法 |
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KR20200038437A (ko) * | 2017-12-11 | 2020-04-13 | 주식회사 케이씨텍 | Cmp용 슬러리 조성물 및 이에 포함된 연마입자 |
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