KR20050097011A - Metal shielding layer formation method and its structure for shielding emi, esd - Google Patents
Metal shielding layer formation method and its structure for shielding emi, esd Download PDFInfo
- Publication number
- KR20050097011A KR20050097011A KR1020040021724A KR20040021724A KR20050097011A KR 20050097011 A KR20050097011 A KR 20050097011A KR 1020040021724 A KR1020040021724 A KR 1020040021724A KR 20040021724 A KR20040021724 A KR 20040021724A KR 20050097011 A KR20050097011 A KR 20050097011A
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- thin film
- shielding
- film
- metal thin
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
Abstract
본 발명은 플라스틱 케이스에 차폐막을 코팅하는 EMI, ESD 용 차폐막 형성방법 및 그 구조에 관한 것으로서, 진공 플라즈마 상태에서 스퍼터링 방식으로 플라스틱 베이스에 제1금속막, 제2금속막, 제3금속막을 차례로 증착하여 3층의 진공 증착막을 차폐막으로 형성함을 특징으로 하고, 상기 제1금속으로는 Ni 금속을 사용하고, 상기 제2금속으로는 Ag 금속을 사용하며, 상기 제3금속으로는 Ni금속을 사용하는 것을 특징으로 한다.The present invention relates to a method of forming a shielding film for EMI and ESD coating a shielding film on a plastic case, and a structure thereof, in which a first metal film, a second metal film, and a third metal film are sequentially deposited on a plastic base by sputtering in a vacuum plasma state. To form a three-layer vacuum deposition film as a shielding film, using a Ni metal as the first metal, Ag metal as the second metal, Ni metal as the third metal Characterized in that.
Description
본 발명은 전자기기에 있어서 내,외부 전자파로 회로보호를 위해 설치하는 EMI, ESD 차폐막에 관한 것으로, 특히 플라스틱 케이스에 차폐막을 코팅하는 EMI, ESD 용 차폐막 형성방법 및 그 구조에 관한 것이다.The present invention relates to an EMI and ESD shielding film installed for protecting circuits of internal and external electromagnetic waves in electronic devices, and more particularly, to a method for forming EMI and ESD shielding film for coating a shielding film on a plastic case and a structure thereof.
전자부품들의 소형화 및 고집적화에 의해 고집적 소자들이 많이 사용되고 있는데, 휴대폰, 노트북, PDA, 휴대폰 카메라등의 내부 부품이나 외부로부터 발생된 전자파나 외부의 정전기 발생에 따라 부품이나 장비에 유해한 영향을 미치게 하므로 제품의 케이스등에 금속박막을 형성하여 상기 장애를 차단할 수 있도록 하고 있다.Due to the miniaturization and high integration of electronic components, high-integration devices are used a lot.In addition, internal components such as mobile phones, laptops, PDAs, and mobile phone cameras have harmful effects on components or equipment due to electromagnetic waves or external static electricity generated from the outside. A metal thin film is formed on the case of the to prevent the obstacle.
이러한 전자파 및 정전기 차폐 방법으로는, 부품이 탑재되는 보드를 장착하는 케이스에 전자파 차폐용 금속박막을 형성하고, 그 차폐 범위에 해당되는 영역을 커버하도록 하고 있다.In such an electromagnetic and electrostatic shielding method, a metal thin film for electromagnetic shielding is formed in a case in which a board on which a component is mounted is formed, and the area corresponding to the shielding range is covered.
금속박막을 형성하는 방법으로, 스프레이법, 습식도금법, 진공증착법, 스퍼터링법, 이온 플레이팅법 등 다양한 방법이 시행되고 있는데, 특히 스프레이나 습식도금 방법은 제조단가가 비싸고, 폐수처리등의 공해문제와 고르게 코팅되지 못하는 문제점 등이 있었다.As a method of forming a metal thin film, various methods such as spray method, wet plating method, vacuum deposition method, sputtering method and ion plating method are being implemented. There was a problem such as not evenly coated.
특히 휴대폰과 같이 인체 환경에 취약한 제품등의 EMI, ESD 차폐막은 염수 분무 시험, 내산, 내화학 시험에 반드시 거쳐야하는 시험 규정이 따른다. 또한 향후 차폐막을 만드는 생산과정이 친환경적인가하는 문제도 자주 거론되고 있는 추세이다.In particular, EMI and ESD shielding films of products vulnerable to the human environment such as mobile phones are subject to the test regulations that must pass the salt spray test, acid and chemical test. In addition, the issue of whether the production process of shielding film is environmentally friendly in the future has been frequently discussed.
현재 국내에서 생산하고 있는 진공증착 차폐방법은 스퍼터링(SPUTTERING)으로 플라스틱 케이스에 스테인레스스틸을 성막(Deposition)하고 열증착방식(Evaporating)으로 구리 또는 은, 또는 구리+은을 성막하고, 다시 보호막으로 스테인레스스틸을 성막(Deposition)하여 생산하고 있으나 간혹 복잡한 형상의 깊은 부위는 STEP Coverage가 현저히 떨어지고 접착력이 약한 열증착의 기술 문제와 제품의 균질성과 생산 재현성, 작업자 의존성등에 기인하여 간혹 박막접착력이 떨어지거나 염수 실험 조건에 실패하는 경우가 많이 발생하고 있는 실정이다.The vacuum deposition shielding method currently produced in Korea is sputtering to deposit stainless steel in plastic case, and to deposit copper or silver or copper + silver by evaporating, and then to stainless steel as a protective film. Deposition of steel is produced, but sometimes the deep part of complex shape is inferior in thin film adhesive strength or salt water due to the technical problem of thermal evaporation with poor STEP coverage and weak adhesion, product homogeneity, production reproducibility and worker dependence. In many cases, the experimental conditions fail.
본 발명은 상기와 같은 종래 문제점을 개선하고자, 환경시험에 잘 견디고, 수질 오염문제의 주범인 도금방식과 대기 오염의 문제가 있는 스프레이 방식을 벗어나며, 친환경적인 진공증착을 이용하고 상기 시험에 견디는 차폐막 형성방법 및 그 차폐막 구조를 제공하기 위한 것이다. The present invention is to improve the conventional problems as described above, well withstand environmental tests, out of the plating method and the spray method with the problem of air pollution, the main culprit of water pollution problems, using an environmentally friendly vacuum deposition and withstand the test It is to provide a forming method and a shielding film structure thereof.
본 발명의 목적은, PCB 상에 탑재된 다수의 부품들을 덮어 씌워 ESD, EMI를 차폐시키기 위하여 플라스틱 케이스에 금속박막을 차폐막으로 형성하는 방법에 있어서,SUMMARY OF THE INVENTION An object of the present invention is to provide a method of forming a metal thin film as a shielding film on a plastic case in order to cover a plurality of components mounted on a PCB to shield ESD and EMI
상기 플라스틱 케이스를 초음파 세정 및 건조를 하는 제1전처리공정과;A first pretreatment step of ultrasonically cleaning and drying the plastic case;
제1전처리 공정 후 소정온도로 소정시간동안 온풍 건조를 하는 제2전처리공정과;A second pretreatment step of performing warm air drying for a predetermined time at a predetermined temperature after the first pretreatment step;
소정의 진공도를 유지하고 소정 압력을 가지는 진공 플라즈마 상태에서 제1금속을 상기 플라스틱 케이스의 일측면에 스퍼터링하여 증착하는 제1증착공정과;A first deposition process of sputtering and depositing a first metal on one side of the plastic case in a vacuum plasma state maintaining a predetermined degree of vacuum;
상기 제1증착공정 후에 제2금속을 소정두께로 증착하는 제2증착공정과;A second deposition step of depositing a second metal to a predetermined thickness after the first deposition step;
상기 제2증착공정 후에 상기 제2금속이 아닌 제1금속 또는 제3의 금속을 소정두께로 증착하고 열처리하여 마무리하는 제3증착공정을 수행하여 3층의 구조로 차폐막을 형성하는 것을 특징으로 한다.After the second deposition process, a third deposition process of depositing a first metal or a third metal other than the second metal to a predetermined thickness, and then performing a heat treatment is performed to form a shielding film having a three-layer structure. .
상기 제1금속으로는 Ni 금속을 사용하고, 상기 제2금속으로는 Ag 금속을 사용하며, 상기 제3금속으로는 Ni금속을 사용하는 것을 특징으로 한다.Ni metal is used as the first metal, Ag metal is used as the second metal, and Ni metal is used as the third metal.
본 발명은 플라스틱 케이스에 금속박막을 차폐막으로 형성하여 PCB상의 부품들을 EMI, ESD로부터 차폐시키도록 덮어씌워 차폐구조를 구성하는 차폐막에 있어서, 베이스의 표면에 증착 형성된 제1금속박막과, 그 제1금속박막 위에 형성되는 제2금속박막과, 그 제2금속박막 위에 형성되는 제2금속박막으로 이루어진 3층 금속박막 구조로 구성된 것을 특징으로 한다.The present invention provides a shielding film in which a metal thin film is formed as a shielding film on a plastic case to cover components on a PCB to shield EMI and ESD from the shielding structure, the shielding film comprising: a first metal film deposited on a surface of a base; It is characterized by consisting of a three-layer metal thin film structure consisting of a second metal thin film formed on the metal thin film, and a second metal thin film formed on the second metal thin film.
본 발명은 제1금속박막과 제2금속 박막 및 제2금속박막과 제3금속박막은 서로 다른 금속으로 이루어지는 이종의 금속박막이고, 상기 제1금속박막과 상기 제3금속박막은 동일한 금속의 박막으로 형성할 수도 있고, 이종의 금속의 박막으로 형성할 수도 있다.According to the present invention, the first metal thin film, the second metal thin film, and the second metal thin film and the third metal thin film are heterogeneous metal thin films made of different metals, and the first metal thin film and the third metal thin film are thin films of the same metal. It may be formed as a thin film, or may be formed as a thin film of different metals.
이하 본 발명의 실시예를 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention will be described in detail.
본 발명은, 접착력과 스텝 커버리지(STEP Coverage)가 나쁜 열증착방식(Evaporating)을 배제하고, 접착력과 스텝 커버리지(STEP Coverage)가 우수한 스퍼터링(SPUTTERING) 방식으로만 하되, 내염수성, 내화학성등 신뢰성 환경에 적합한 금속막 구조와, 특히 EMI 차폐를 위해서는 사용 휴대폰 사용주파수 대역에서 불필요한 성분의 RF를 차폐하여야 하는 최소 표면두께(SKIN DEPTH)를 고려하여 충분한 두께의 금속을 성막시켜야 하며, 플라즈마하에서 증착되는 특성상 열문제로 인한 열스트레스(Thermal Stress)에 견디는 프로세스를 제공한다.The present invention excludes thermal evaporation (Evaporating), which has poor adhesion and step coverage, and has only sputtering, which has excellent adhesion and step coverage, but is reliable in salt water resistance and chemical resistance. Metal film structure suitable for the environment, especially for EMI shielding, must be deposited with sufficient thickness in consideration of the minimum surface thickness (SKIN DEPTH) to shield the RF of unnecessary components in the frequency band used for mobile phones. It provides a process that resists thermal stress due to heat problems.
도 1은 본 발명을 적용하기 위한 일반적인 EMI, ESD 차폐구조 설명도이다.1 is a diagram illustrating a general EMI shielding structure for applying the present invention.
이에 도시된 바와 같이, 인쇄회로기판(PCB)(1) 위에 부품(2)들이 탑재되고, 그 부품(2)들로 부터 발생되는 전자파 또는 외부의 전자파 및 정전기등의 원인으로 인해 발생될 수 있는 EMI, ESD를 차단하기 위해서 차단막(20)을 형성한 케이스(10)를 이용하여 차폐하고자 하는 부품들을 덮어 씌워서 차폐하는 구조로 구성된다.As shown therein, the components 2 are mounted on a printed circuit board (PCB) 1, which may be generated due to electromagnetic waves generated from the components 2 or external electromagnetic waves and static electricity. In order to shield EMI and ESD, the casing 10 formed with the shielding film 20 covers the components to be shielded by covering them.
도 2는 본 발명에 의한 EMI, ESD 차폐를 위한 금속 차폐막의 구조를 보인 도면이다.2 is a view showing the structure of a metal shielding film for EMI, ESD shielding according to the present invention.
이에 도시된 바와 같이, 먼저 차폐판의 베이스(10) 위에 제1금속막(21)을 증착하고, 그위에 제2금속막(22)을 증착 한 후 다시 제3금속막(23)을 증착한 구조로 구성된다. 즉, 본 발명의 차폐막 구조는 제1, 제2, 제3 금속막(21-23)으로 이루어진 2중구조의 금속막으로 형성한다.As shown in the drawing, first, the first metal film 21 is deposited on the base 10 of the shield plate, and the second metal film 22 is deposited thereon, and then the third metal film 23 is deposited again. It is composed of a structure. That is, the shielding film structure of the present invention is formed of a metal film having a double structure composed of the first, second, and third metal films 21-23.
여기서 상기 베이스는, 플라스틱 케이스를 의미하며, 통상 휴대폰등의 케이스에 있어서 그 배면에 금속 차폐막(20)을 형성하여 내부 부품들을 EMI, ESD로부터 차폐 시키도록 덮어쓰워서 부착하고 있으며, 이경우 차폐실을 형성할 수 있도록 리브를 형성하여 구성하게 되나 본 발명의 설명에서는 이러한 구조적인 것은 생략한다. 본 발명은 상기 도1과 같이 적용되는 차폐장치에서 플라스틱 케이스 즉, 베이스(10)에 형성하는 금속박막인 차폐막(20)의 구조와 그 형성 방법을 제공하는 것이다.In this case, the base means a plastic case, and in a case of a mobile phone or the like, a metal shielding film 20 is formed on a rear surface of the base to cover internal components to shield them from EMI and ESD. The ribs are formed to be formed so as to be formed, but this structural description is omitted in the description of the present invention. The present invention provides a structure and a method of forming the shielding film 20, which is a metal thin film formed on the plastic case, that is, the base 10 in the shielding device applied as shown in FIG.
도 3은 본 발명에 의한 EMI, ESD 차폐막의 증착방법을 설명하기 위한 흐름도이다.3 is a flowchart illustrating a method of depositing an EMI and ESD shielding film according to the present invention.
PCB(1)상의 부품(2)부품들을 덮어 씌우는 플라스틱 케이스(10)에 금속박막(20)을 차폐막으로서 형성하는 차폐막 형성 방법에 있어서, 플라스틱 케이스(10) 초음파 세정 및 건조를 하는 제1전처리공정(S10)을 수행하고, 제1전처리공정(S10) 후 소정온도로 소정시간동안 온풍 건조를 하는 제2전처리공정(S20)을 수행하여 금속막 증착을 위한 전처리를 한다.In the shielding film formation method of forming the metal thin film 20 as a shielding film in the plastic case 10 which covers the components (2) components on the PCB (1), the first pretreatment step of ultrasonic cleaning and drying of the plastic case (10) (S10), and after the first pretreatment step (S10) to perform a second pretreatment step (S20) to dry the warm air at a predetermined temperature for a predetermined time to perform a pretreatment for metal film deposition.
이어서, 소정의 진공도를 유지하고 소정 압력을 가지는 진공 플라즈마 상태에서 제1금속을 상기 플라스틱 케이스(10)의 일측면에 스퍼터링하여 증착하는 제1증착공정(S30)을 수행하고, 상기 제1증착공정(S30) 후에 제2금속을 소정두께로 증착하는 제2증착공정(S40)을 수행하며, 상기 제2증착공정(S40) 후에 상기 제2금속이 아닌 제1금속 또는 제3의 금속을 소정두께로 증착하고 마무리하는 제3증착공정(S50)을 수행하여 3층의 구조로 차폐막을 형성한다.Subsequently, a first deposition process (S30) is performed by sputtering and depositing a first metal on one side of the plastic case 10 in a vacuum plasma state having a predetermined vacuum degree and a predetermined pressure, and performing the first deposition process. After (S30) performs a second deposition step (S40) for depositing a second metal to a predetermined thickness, and after the second deposition step (S40) a first metal or a third metal other than the second metal is a predetermined thickness. A third deposition process (S50) of depositing and finishing is performed to form a shielding film with a three-layer structure.
상기 제1금속으로는 Ni 금속을 사용하고, 상기 제2금속으로는 Ag 금속을 사용하며, 상기 제3금속으로는 Ni 금속을 사용한다.Ni metal is used as the first metal, Ag metal is used as the second metal, and Ni metal is used as the third metal.
하기 설명에서는 본 발명에 의한 3중구조의 차폐막(20)이 효과와 그 증착 방법을 설명하기 위해 실험한 결과들을 표를 이용해서 설명한다.In the following description, the results of experiments to explain the effect and the deposition method of the three-layered shielding film 20 according to the present invention will be described using a table.
차폐성이 매우 뛰어난 구리와 은은 자체만으로 RF를 차단하는 효과가 매우 우수하나 신뢰성 실험에 모두 견디지(상온, 72시간) 못하였다.Copper and silver, which have very good shielding, have a very good effect of blocking the RF by themselves, but they did not endure the reliability test (at room temperature, 72 hours).
상기 결과에서 밀착성을 제외한 항목중 차폐성과 내염수성, 내산성 등을 고려하였을 때 은이 우수한 것으로 판명 되었다. 내염수 시험에서 은이 박리된 것은 밀착성이 나빠 생긴 현상이며 특히 은은 시간이 흐르면서 밀착성이 더욱 나빠지며 1mm 간격의 크로스 커팅 테이프(Cross Cutting Tape) 시험에 처음에는 합격하였으나 수일정도 지난 후 모두 불합격 되었다. In the above results, silver was found to be excellent when considering the shielding property, saline resistance, and acid resistance among the items except adhesion. The peeling of silver in the salt water test resulted in poor adhesion. In particular, silver was worsened over time, and initially passed the 1mm interval cross cutting tape test, but after several days, all failed.
밀착성과 신뢰성 시험을 만족키 위해 표1의 신뢰성 환경에 좋은 금속과 표2의 차폐성이 우수한 금속을 다음과 같이 다중구조로 성막하여 실험을 반복적으로 수십 차례 시험을 통해 다음과 같은 결과를 얻었다. 또한 시편은 두께 178미크론 PC 필름 시편과 PC재질, ABS 재질의 휴대폰케이스로 각각 실험하였다.In order to satisfy the adhesion and reliability test, metals with good shielding environment of Table 1 and metals with good shielding property of Table 2 were formed into multiple structures as follows. The specimens were also tested with a 178 micron thick PC film specimen, a PC case, and a mobile phone case made of ABS.
<실시예><Example>
1) 제원 --실험장치: 마그네트론 스퍼터링 시스템(Magnetron Sputtering system) 주요제원 : 챔버(Chamber)-- φ1400 x 1400h mm1) Specifications-Experimental apparatus: Magnetron Sputtering system Main specifications: Chamber-φ1400 x 1400h mm
타겟 사이즈(Target Size)-- 1220 x 170mm, 4sets Target Size-1220 x 170mm, 4sets
전원(DC Power)-- 30 KW 2set DC Power-30 KW 2set
기판 크기-- φ1280 x 1200h mm Board Size-- φ1280 x 1200h mm
위 실험 결과에서 제2층이 구리막이 포함된 박막은, 밀착력은 우수하나 신뢰성 시험에서 좋지 않은 결과가 나왔으며, 은이 포함된 박막은 표2와는 달리 밀착력이 우수하고 각 신뢰성 시험에 좋은 결과가 나왔다. 염수에 특히 좋지 않은 결과는 1층 레이어와 2층 레이어인 은과의 접착력이 나쁜 요인에 기인하였으며, 가장 좋은 결과가 나온 Ni+Ag+Ni 막은 금속간 결합이 은과 니켈이 아주 우수한 결과로 보인다. As a result of the above experiment, the thin film containing the copper layer of the second layer has excellent adhesion but poor results in the reliability test. Unlike the table 2, the thin film containing silver has excellent adhesion and good results in each reliability test. . Particularly unfavorable results for the brine were due to the poor adhesion between the 1st and 2nd layers of silver. The Ni + Ag + Ni films showed the best results of silver and nickel bonding between metals. .
따라서 신뢰성시험에 좋은 EMI 또는 ESD 차폐용 진공 증착막으로는 진공 플라즈마 상태에서 스퍼터링 방식으로 성막한 Ni+Ag+Ni막이 가장 우수한 것으로 판정된다.Therefore, it is judged that the Ni + Ag + Ni film formed by sputtering in the vacuum plasma state is the most excellent as the vacuum deposition film for EMI or ESD shielding which is good for the reliability test.
그러나 휴대폰 케이스등의 경우 세척이 곤란하고 페인트등의 성분이 도포되었거나 이형제가 묻은 경우 코팅 접착력과 염수에 특히 나쁜 결과가 나왔는데 이런 경우 전처리로 프라이머를 사전에 도포하고 건조한 것이나 이온건으로 진공상태에서 플라즈마 세정하여 스퍼터링 한 경우 모두 아주 좋은 결과가 나왔다.However, in case of cell phone case, it is difficult to clean, and especially when the components such as paint are applied or the release agent is applied, it has a particularly bad result in coating adhesion and salt water. In this case, pretreatment is applied by pre-treatment and plasma is cleaned by vacuum with dry or ion gun. If sputtered by both gave very good results.
따라서, 본 발명에서는 가장 효과적인 층구조로서, 3층 구조의 금속막을 이용하며, 그중에서도 가장 효과적인 금속으로는 Ni + Ag + Ni막을 도2와 같은 3층 금속막(21 - 23)으로 증착하며, 증착 방법으로는 스퍼터링방법을 사용한다.Therefore, in the present invention, as the most effective layer structure, a metal layer having a three-layer structure is used, and among them, as a most effective metal, a Ni + Ag + Ni film is deposited as a three-layer metal film 21-23 as shown in FIG. The sputtering method is used as a method.
이상에서 상세히 설명한 바와 같이, 본 발명에 의하면, 염수 시험과 금속막과 플라스틱간의 접착력 및 금속 막끼리의 접착력을 고려하여 최상의 효과를 얻을 수 있는 효과가 있으며, 또한 EMI, ESD등의 차폐 효과도 뛰어난 차폐막을 형성할 수 있는 효과가 있다.As described in detail above, according to the present invention, it is possible to obtain the best effect in consideration of the salt water test and the adhesion between the metal film and the plastic and the adhesion between the metal film, and also excellent shielding effect such as EMI, ESD There is an effect that can form a shielding film.
도 1은 본 발명을 설명하기 위한 EMI, ESD 차폐구조 설명도.1 is an explanatory diagram of EMI, ESD shielding structure for explaining the present invention.
도 2는 본 발명에 의한 EMI, ESD 차폐를 위한 금속 차폐막 구조도.Figure 2 is a structure of a metal shielding film for EMI, ESD shielding according to the present invention.
도 3은 본 발명에 의한 EMI, ESD 차폐를 위한 금속 차폐막 형성방법 흐름도.Figure 3 is a flow diagram of a metal shielding film forming method for EMI, ESD shielding according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
1 : 기판 2 : 부품1: board 2: components
10 : 플라스틱 케이스(베이스) 20: 금속 차폐막10: plastic case (base) 20: metal shielding film
21 - 23 : 제1 - 제3 금속막21-23: 1st-3rd metal film
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040021724A KR20050097011A (en) | 2004-03-30 | 2004-03-30 | Metal shielding layer formation method and its structure for shielding emi, esd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040021724A KR20050097011A (en) | 2004-03-30 | 2004-03-30 | Metal shielding layer formation method and its structure for shielding emi, esd |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20050097011A true KR20050097011A (en) | 2005-10-07 |
Family
ID=37276884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020040021724A KR20050097011A (en) | 2004-03-30 | 2004-03-30 | Metal shielding layer formation method and its structure for shielding emi, esd |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20050097011A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100807796B1 (en) * | 2005-05-19 | 2008-03-06 | 한덕수 | Flexible Multi-Layer Printed Circuit Board for Fine Pattern. |
| CN109666895A (en) * | 2019-02-02 | 2019-04-23 | 江苏新思达电子有限公司 | A kind of electromagnetism radiation protective layer EMI technique of the vacuum plating Ag on plastic cement |
| KR20210147625A (en) * | 2020-05-29 | 2021-12-07 | 정현철 | Method for manufacturing antiviral film with copper deposited thereon and antiviral film deposited with copper manufactured using the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010073610A (en) * | 2000-01-19 | 2001-08-01 | 리우, 치-치 | Method for forming an EMI Shielding film |
| KR20030022203A (en) * | 2003-02-10 | 2003-03-15 | 아이티엠 주식회사 | LAYERED STRUCTURE OF THIN FILMS INCLUDING Ag FILM FOR PROVIDING HIGH RELIABILITY ON INSULATING SUBSTRATE AND METHOD FOR FABRICATING THEREOF |
| KR20030076470A (en) * | 2003-06-19 | 2003-09-26 | 예원플라즈마 주식회사 | An apparutus and method for EMI and ESD shielding using plastic can in borad of electronic equipment |
| KR20040031847A (en) * | 2002-10-04 | 2004-04-14 | 권영욱 | Coating System for Preventable EMI and Color Metal of Poly Carbonate of Plain Acrylic Glass using Ion Plating Method |
-
2004
- 2004-03-30 KR KR1020040021724A patent/KR20050097011A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010073610A (en) * | 2000-01-19 | 2001-08-01 | 리우, 치-치 | Method for forming an EMI Shielding film |
| KR20040031847A (en) * | 2002-10-04 | 2004-04-14 | 권영욱 | Coating System for Preventable EMI and Color Metal of Poly Carbonate of Plain Acrylic Glass using Ion Plating Method |
| KR20030022203A (en) * | 2003-02-10 | 2003-03-15 | 아이티엠 주식회사 | LAYERED STRUCTURE OF THIN FILMS INCLUDING Ag FILM FOR PROVIDING HIGH RELIABILITY ON INSULATING SUBSTRATE AND METHOD FOR FABRICATING THEREOF |
| KR20030076470A (en) * | 2003-06-19 | 2003-09-26 | 예원플라즈마 주식회사 | An apparutus and method for EMI and ESD shielding using plastic can in borad of electronic equipment |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100807796B1 (en) * | 2005-05-19 | 2008-03-06 | 한덕수 | Flexible Multi-Layer Printed Circuit Board for Fine Pattern. |
| CN109666895A (en) * | 2019-02-02 | 2019-04-23 | 江苏新思达电子有限公司 | A kind of electromagnetism radiation protective layer EMI technique of the vacuum plating Ag on plastic cement |
| KR20210147625A (en) * | 2020-05-29 | 2021-12-07 | 정현철 | Method for manufacturing antiviral film with copper deposited thereon and antiviral film deposited with copper manufactured using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5407865A (en) | Method of manufacturing a flexible metallized polymer film cover for environmental protection of electronic assemblies | |
| CN101175394A (en) | Anti-electromagnetic interference multilayer composite material and method for producing the same | |
| AU5060485A (en) | Rfi shielded plastic articles and process for making same | |
| CN101400831B (en) | Polyimide substrate and method of manufacturing printed wiring board using the same | |
| EP2898758B1 (en) | A method for making partially coated precision synthetic thread square mesh fabrics for aesthetic applications | |
| CN105367809A (en) | Method for producing nickel-plated carbon fiber board having electromagnetic shielding property | |
| KR20050097011A (en) | Metal shielding layer formation method and its structure for shielding emi, esd | |
| CN102792786B (en) | 2 layers of flexible substrate and manufacture method thereof | |
| US20040194988A1 (en) | EMI-shielding assembly and method for making same | |
| JP2001200376A (en) | Method for depositing electro-magnetic wave shield film | |
| US20120118627A1 (en) | Electromagnetic shielding article and method for manufacturing same | |
| Kupfer et al. | Ecologically important metallization processes for high-performance polymers | |
| WO2004038065A1 (en) | Stabilized aluminum laminate having aluminum and stabilizing layer laminated thereon | |
| KR101375237B1 (en) | The fabrication method of thin electromagnetic shield film and electromagnetic shield film thereby | |
| JP5565764B2 (en) | Electromagnetic wave interference prevention transfer film | |
| CN101193489A (en) | Plating part and its making method | |
| KR101003317B1 (en) | Emi shielding conductive thin film using dry-wet plating and method for preparing the same | |
| CN102465259A (en) | Electromagnetic shielding processing method for surface of plastic and product prepared by using electromagnetic shielding processing method | |
| CA2511833A1 (en) | Components for a film-forming device and method for cleaning the same | |
| JP2018139018A (en) | Conductive substrate, method for producing conductive substrate | |
| KR20010073610A (en) | Method for forming an EMI Shielding film | |
| CN214545337U (en) | Ultra-thin electromagnetic wave shielding film | |
| JPH03129894A (en) | Flexible printed wiring board and manufacture thereof | |
| KR100395794B1 (en) | LAYERED STRUCTURE OF THIN FILMS INCLUDING Ag FILM FOR PROVIDING HIGH RELIABILITY ON INSULATING SUBSTRATE AND METHOD FOR FABRICATING THEREOF | |
| JP2817891B2 (en) | Manufacturing method of electromagnetic wave shielding plastic molded products |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |