JP5565764B2 - Electromagnetic wave interference prevention transfer film - Google Patents

Description

The present invention relates to a shielding sheet base material for electromagnetic wave interference countermeasures, and particularly to a metal thin film transfer film used for a flexible substrate or the like.

A lot of various electronic devices have spread in our lives, and they have become indispensable. As their operational stability becomes important, it has been required that electronic devices do not cause electromagnetic interference (hereinafter referred to as EMI) or are not affected. Especially for information terminals such as personal computers, excellent EMI countermeasures are required to avoid errors. On the other hand, circuit design that carefully considers EMI is difficult due to shortened product life, and it can be easily installed. Material is desired. In addition, since portable information terminals such as mobile phones and small notebook PCs use flexible substrates, they must be lightweight, thin and flexible, and conventional EMI shield tapes using metal foil are required. I can't meet.

  Therefore, a transfer metal sheet with a conductive adhesive layer is disclosed (Patent Document 1). However, the method of applying and transferring a conductive adhesive to the metal thin film layer directly formed on the base film can achieve thinning, but the peeling force between the metal thin film layer and the base film is large, Since the unevenness on the surface of the substrate film is transferred as it is, it is difficult to keep the peeling force uniform, and the metal thin film layer may be cracked or peeled off, which is a problem.

  On the other hand, a method of making the peeling force uniform by forming a metal thin film layer on a base film provided with a release material layer is disclosed (Patent Document 2). In the metal sheet for EMI use, in order to prevent short circuit due to contact with surrounding circuits, it is necessary to perform post-processing such as applying an insulating material to the opposite side of the adhesive coating surface of the metal thin film layer. Ease of surface coating is required on both sides. The method of forming the metal thin film layer on the release material layer as disclosed in Patent Document 2 has the effect of improving the workability by making the peeling force uniform and lightly peeling off. As a result, the release material may remain on the surface of the metal thin film layer, and there is a problem that the remaining release material becomes a repellency defect when an adhesive or an insulating material is applied.

JP 2006-297714 A JP 2003-053888 A

  Accordingly, an object of the present invention is to provide an EMI-preventing transfer film that has a light peeling property that can be easily and easily peeled between the metal thin film layer and the base film, and that has a high bending resistance. .

The present invention for solving this problem is characterized by the following configurations (1) to (3).
(1) on at least one surface of a substrate film, a release layer and a metal thin film layer made of a release material layer and the intermediate layer is a product layer, after the plasma treatment the releasing layer surface, by depositing a metal thin film layer a wave transfer film for failure prevention comprising, a base film, release material layer, the intermediate layer, are laminated in this order of the metal thin film layer, Ri the releasing material layer Do from thermosetting melamine resin, an intermediate layer Ri Do acrylic resin, a plasma treatment is strained facilities on the opposite side surface and the release agent layer of the intermediate layer, peel strength between the intermediate layer and the mold release layer is 0.001~0.1N / cm A transfer film for preventing electromagnetic interference.
(2) The metal thin film layer has a thickness of 0.1 to 5 μm and a resistance value of 1Ω or less, and is selected from the group consisting of Cu, Ag, Al, Cr, Fe, Ni, Pd, Zn and Sn. The transfer film for preventing electromagnetic interference according to (1), comprising at least one kind of metal and formed by vapor deposition.
(3) the plasma processing on the substrate film a release layer laminated on, depositing a metal thin film layer to a plasma treated surface of the release layer (1) or for electromagnetic interference prevention according to (2) A method for producing a transfer film.

  According to the transfer film for preventing electromagnetic interference of the present invention, by selecting an appropriate intermediate layer, it is possible to achieve both light peelability from the base film and high bending resistance.

FIG. 1 is a partial sectional view showing an embodiment of a transfer film according to the present invention. As a method of using this transfer film, a protective coat such as an insulator is bonded to 6 surfaces, and then the 5 release surfaces are separated between the release material layer 2 and the intermediate layer 3, and then bonded to 5 surfaces. The agent is applied and transferred to a molded product such as FPC.

  The transfer film for preventing electromagnetic interference according to the present invention has a structure having a release material layer, an intermediate layer, and a metal thin film layer in this order on a film serving as a substrate.

  The film serving as the substrate in the present invention is desired to have sufficient strength to withstand various processes for forming a thin film. Specific examples include polyester resins, polyolefin resins, polyamide resins, acrylic resins, polyvinyl alcohol resins, polyurethane resins, etc., but ease of handling, durability against heat and tension, low unit price, etc. From this point, a polyester resin, particularly polyethylene terephthalate is preferable. The thickness of the film is preferably 12 μm to 188 μm, and more preferably 25 μm to 100 μm. If it is too thin, there is a high possibility that folds, wrinkles, and peeling will occur during handling, and if it is too thick, it will be inflexible, cracking during handling, and the price of the film will increase, which will increase the cost of processed products. Not suitable.

  The release layer in the present invention is composed of a release material layer and an intermediate layer. When an external force is applied to peel them from the base material side and the metal thin film layer side, the release layer is easily formed at the interface between the release material layer and the intermediate layer. It is characterized by peeling. Since the peeling interface is the interface between the release material layer and the intermediate layer, it is possible to significantly improve the adhesiveness in the post-processing as well as the light peeling property. This feature is realized by selecting the material of the release material layer and the intermediate layer as follows.

  The release material layer in the present invention is preferably a material having low compatibility with the material of the intermediate layer in order to realize light release properties with the intermediate layer, while on the other hand, the adhesiveness with the film as the base material It is desirable that it is good. In order to easily peel off at the interface between the release material layer and the intermediate layer, a thermosetting melamine resin having low compatibility with the material of the intermediate layer is preferable.

  In this invention, 0.1-1 micrometer is preferable and, as for the thickness of a mold release material layer, More preferably, it is 0.1-0.5 micrometer. If it is too thin, it will be difficult to maintain the strength of the coating film, so that the release material layer may be destroyed at the time of peeling, and it may be difficult to peel lightly. If it is too thick, the material cost of the mold release material will increase despite the fact that physical properties such as light releasability are not improved, which is industrially unsuitable.

  The intermediate layer in the present invention is preferably a material having low compatibility with the material of the release material layer in order to achieve light release properties with the release material layer, while obtaining adhesion with the flexible substrate. Therefore, it is desired that the compatibility with the adhesive is good. Since high durability and high adhesion are required for bonding electronic components, generally an epoxy adhesive is preferably used, so the intermediate layer material is an acrylic resin that is compatible with the epoxy adhesive. Is preferred. Moreover, the residual of the melamine resin layer after peeling can be suppressed by forming the acrylic resin layer having good peelability from the melamine resin layer.

In the present invention, the thickness of the intermediate layer is preferably from 0.1 to 1 μm, more preferably from 0.1 to 0.5 μm. If it is too thin, it becomes difficult to maintain the strength of the coating film, so that there is a possibility that the intermediate layer may be destroyed at the time of peeling and cannot be lightly peeled off. If it is too thick, the material cost of the intermediate layer will increase although physical properties such as light peelability will not be improved, which is industrially unsuitable.
The peel strength between the intermediate layer and the release material layer is preferably 0.001 to 0.1 N / cm, more preferably about 0.005 to 0.02 N / cm. If the peel strength is too high, the metal thin film layer is likely to break during peeling, and there is a risk of cracking or peeling, and transfer may not be possible.If the peel strength is too low, the metal thin film layer will not be transferred before transfer due to the so-called foil dropping phenomenon. There is a risk of peeling and breaking. A peeling force of 0.001 to 0.1 N / cm can be obtained from the resin type of the release material layer and its coating thickness.

  A dry coating method such as CVD exists as a method for forming the release material layer and the intermediate layer, but the wet coating method is preferable because it does not require a vacuum device, has a high processing speed, and is low in cost. In addition, there are known methods such as a slit die and gravure in the coating method of the wet coating method, but it is not particularly limited, but the microgravure method is preferably used because it is easy to obtain smoothness on a thin coating surface. It is done.

  The metal thin film layer in the present invention is provided for the purpose of blocking electromagnetic waves causing EMI, and is at least one selected from Cu, Ag, Al, Cr, Fe, Ni, Pd, Zn, and Sn. It is made of metal and may be an alloy containing these metals or other metals, but Cu, Al and Ni are preferable. Further, the thin film layer made of metal or alloy is not limited to a single layer, and can be implemented in a stacked structure. From the viewpoint of cost and ease of processing, a single layer or two layers are preferable.

  The thickness of the metal thin film layer is preferably 0.1 to 5 μm, more preferably 0.5 to 5 μm, and still more preferably 0.5 to 1 μm. As the thickness decreases, the surface resistance value increases and it becomes difficult to obtain sufficient EMI shielding properties. On the other hand, if it is too thick, the vapor deposition film will be cleaved and cracked due to the internal strain of the metal film obtained by vapor deposition, so that the metal thin film is easily broken and the flex resistance is lowered.

  As a method for producing the metal thin film layer, there are PVD methods such as electrolysis and electroless plating, rolling, and sputtering, but a vapor deposition method capable of producing a low resistance metal thin film at a relatively high speed is preferable. There is also a wet coating method using metal powder, but the resistance value is high and it is not suitable for EMI shielding applications. Moreover, as a vapor deposition method, known methods such as EB heating vapor deposition, resistance heating vapor deposition, induction heating vapor deposition, sputtering, and ion plating can be used. However, induction heating vapor deposition is preferable because it is easy to obtain a large evaporation amount. is there.

  In addition, in the method for forming a metal thin film layer, it is preferable to perform plasma treatment on the base film simultaneously in the same system as the metal thin film layer deposition apparatus or in another system, and then deposit the metal thin film layer. . Bending resistance can be remarkably improved by performing a plasma treatment on the metal thin film layer forming surface of the base film.

In the present invention, the plasma discharge treatment may be performed by a known method. However, when the discharge gas is a high-frequency glow discharge using oxygen gas as the discharge gas, a high effect is obtained with respect to the bending resistance. When it is set to ˜50 W · min / m ² , a more preferable effect is obtained.

  In the present invention, when performing plasma treatment, the cathode electrode for generating plasma is preferably made of at least one metal selected from Cu, Ag, Al, Cr, Fe, Ni, Pd, Zn, and Sn. These metals or alloys containing other metals may be used, but Cu, Al and Ni are preferred.

  The above-mentioned transfer film for preventing electromagnetic interference is incorporated into a flexible substrate such as a mobile phone or a notebook computer. When affixed to the surface of a flexible substrate, after peeling the substrate film from the electromagnetic interference prevention transfer film, an adhesive layer made of an adhesive is provided on the intermediate layer side of the release layer and bonded via the adhesive layer. . A known adhesive can be used for the adhesive layer.

  Embodiments of the present invention will be described below with reference to examples, but the present invention is not limited to these examples. Evaluation methods in the examples of the present invention are as follows.

<Evaluation method 1>
The thicknesses of the release material layer, the intermediate layer, and the metal thin film layer were obtained by measuring three points in the width direction of the A4 plate sample using an Anritsu digital micrometer “K351C” and obtaining an average value.

<Evaluation method 2>
The surface resistance value was determined by measuring the three points in the width direction of the A4 plate sample by a four-probe method using “Loresta MCP-T350” manufactured by Dia Instruments. From the viewpoint of the EMI prevention effect, a lower surface resistance value is appropriate, and 1Ω or less is preferable.

<Evaluation method 3>
The peel strength of the release layer is determined by cutting the transfer film for preventing electromagnetic interference into a 1 cm width and a length of 15 cm, fixing the base film side to a vertical wall with double-sided tape, and then “Cello Tape No. 405” made by Nichiban When a weight was affixed to the metal thin film layer with (Registered Trademark), the weight was calculated from the weight of the weight when the metal thin film layer naturally peeled off from the base film and dropped. From the viewpoint of ease of transfer processing, a lower peel strength is appropriate, and 0.049 N or less is preferable.

<Evaluation method 4>
For the EMI prevention effect, the attenuation ratio of the electric field strength was measured according to the “KEC method” using an evaluation device manufactured by Microwave Factory.

<Evaluation method 5>
Bending resistance was evaluated using “SEK-31B4S” manufactured by Shin-Etsu Engineering Co., Ltd. according to JIS C 6471-1995 (Reference 3 Bending Resistance). The sample was bent and the resistance increased rapidly. The number of times of bending was measured.

<Evaluation method 6>
The adhesion strength after adhering the electromagnetic interference prevention transfer film to the object to be transferred was obtained by attaching “Cello Tape No. 405” (registered trademark) to the metal thin film layer side of the electromagnetic interference prevention transfer film cut out on the A4 plate. After that, the base film was peeled off, and “epoxy adhesive 5 minute curing type” manufactured by Atombond was applied to the intermediate layer side of the release layer, adhered to an ABS plate and allowed to stand at room temperature for 24 hours. (Registered trademark) was peeled off from the metal thin film layer, and the metal thin film layer was observed. When the base material film is peeled from the transfer film for preventing electromagnetic interference, if the release material layer remains in the intermediate layer, the release material layer remains when the cello tape No. 405 (registered trademark) is peeled off. The part that has been peeled off. If the metal thin film layer remains on the ABS plate, it is considered acceptable.

[Example 1]
A4 version of Toray's polyethylene terephthalate film “Lumirror” T62 (thickness 50 μm) is used as a base film, and a melamine-based resin paint “RP-50” manufactured by Miwa Laboratory is used as a release material layer on one side with a bar coater. It was applied so that the thickness after drying was 0.5 μm. After applying “RP-50”, an acrylic paint “MCS5041 DC No. 2” manufactured by Dainippon Ink & Chemicals, Inc. was applied as an intermediate layer with a bar coater so that the thickness after drying was 0.7 μm. . After the surface of “MCS5041 DC No. 2” was subjected to plasma treatment using a copper cathode electrode, copper was vacuum deposited by an induction heating method so as to have a thickness of 1 μm.

[Example 2]
A transfer film was obtained in the same manner as in Example 1 except that the thickness after drying of “MCS5041 DC No. 2” was 0.1 μm in Example 1.

Example 3
In Example 1, a transfer film was obtained in the same manner as in Example 1 except that the thickness of the copper layer was 0.1 μm.

[ Reference Example 4]
A transfer film was obtained in the same manner as in Example 1 except that the surface of “MCS5041 DC No. 2” was not plasma-treated in Example 1.

Example 5
In Example 1, it carried out like Example 1 except having made thickness of a copper layer into 0.01 micrometer, and obtained the transfer film.

[Comparative Example 1]
In Example 1, it carried out like Example 1 except not having applied "MCS5041 DC No.2" on "RP-50", and having directly vacuum-deposited copper, and obtained the transfer film. .

[Comparative Example 2]
A4 version of Toray's polyethylene terephthalate film “Lumirror” T62 (thickness 50 μm) is used as a base film, and a cellulose resin paint “1000 clear” made by Miwa Laboratory is dried with a bar coater as a release layer on one side. It was applied so that the subsequent thickness was 0.5 μm. The intermediate layer was not formed, and the surface of “1000 clear” was subjected to plasma treatment using a copper cathode electrode, and then copper was vacuum deposited by an induction heating method to a thickness of 1 μm.

The evaluation results of the above Examples 1 to 3, 5 , Reference Example 4 and Comparative Examples 1 to 2 are collectively shown in Table 1 below.

  As shown in Table 1, the transfer films obtained in Comparative Examples 1 and 2 are decisive as transfer films for EMI shield materials, such as very high peel strength or partial peeling in adhesion evaluation after adhesion. There are some disadvantages. On the other hand, the transfer films obtained in Examples 1 to 5 can obtain a film having excellent physical properties as a transfer film for an EMI shield material. In particular, Examples 1 to 3 were suitable.

1 Substrate film 2 Release material layer (release layer)
3 Intermediate layer (release layer)
4 Metal thin film layer 5 Release material side of intermediate layer Interface 6 External surface of metal thin film layer

Claims (3)

On at least one surface of a substrate film, a release layer and a metal thin film layer made of a release material layer and the intermediate layer is a product layer, after the plasma treatment the releasing layer surface, electromagnetic interference formed by depositing a metal thin film layer a transfer film for preventing, base film, release material layer, the intermediate layer, are laminated in this order of the metal thin film layer, Ri the releasing material layer Do from thermosetting melamine resin, an intermediate layer of an acrylic resin Do Ri, plasma treatment on the opposite side surface and the release agent layer of the intermediate layer is strained facilities, and wherein the peel strength between the intermediate layer and the mold release layer is 0.001~0.1N / cm Transfer film for preventing electromagnetic interference. The metal thin film layer has a thickness of 0.1 to 5 μm and a resistance value of 1Ω or less, and is at least one selected from the group consisting of Cu, Ag, Al, Cr, Fe, Ni, Pd, Zn, and Sn. The transfer film for preventing electromagnetic interference according to claim 1, wherein the transfer film is made of various kinds of metals and formed by a vapor deposition method. The method for producing a transfer film for preventing electromagnetic interference according to claim 1 or 2, wherein the release layer laminated on the base film is subjected to plasma treatment, and a metal thin film layer is deposited on the plasma treatment surface of the release layer. .

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