KR20050086934A - 상보적 센서를 구현하는 계측 프로세서 제어 방법 및 장치 - Google Patents

상보적 센서를 구현하는 계측 프로세서 제어 방법 및 장치 Download PDF

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Publication number
KR20050086934A
KR20050086934A KR1020057011712A KR20057011712A KR20050086934A KR 20050086934 A KR20050086934 A KR 20050086934A KR 1020057011712 A KR1020057011712 A KR 1020057011712A KR 20057011712 A KR20057011712 A KR 20057011712A KR 20050086934 A KR20050086934 A KR 20050086934A
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KR
South Korea
Prior art keywords
sensors
wafer
thickness
sensor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1020057011712A
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English (en)
Korean (ko)
Inventor
예히엘 고트키스
로드니 키슬러
알렉산더 옥자르츠
데이비드 헴커
니콜라스 제이 브라이트
Original Assignee
램 리써치 코포레이션
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Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20050086934A publication Critical patent/KR20050086934A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
    • G01B7/06—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness for measuring thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/238—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
KR1020057011712A 2002-12-23 2003-12-17 상보적 센서를 구현하는 계측 프로세서 제어 방법 및 장치 Withdrawn KR20050086934A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/328,884 2002-12-23
US10/328,884 US6894491B2 (en) 2002-12-23 2002-12-23 Method and apparatus for metrological process control implementing complementary sensors

Publications (1)

Publication Number Publication Date
KR20050086934A true KR20050086934A (ko) 2005-08-30

Family

ID=32594613

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057011712A Withdrawn KR20050086934A (ko) 2002-12-23 2003-12-17 상보적 센서를 구현하는 계측 프로세서 제어 방법 및 장치

Country Status (8)

Country Link
US (2) US6894491B2 (https=)
EP (1) EP1576336A1 (https=)
JP (1) JP2006511801A (https=)
KR (1) KR20050086934A (https=)
CN (1) CN100347516C (https=)
AU (1) AU2003297336A1 (https=)
TW (1) TWI227775B (https=)
WO (1) WO2004059242A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR100971839B1 (ko) * 2007-09-24 2010-07-22 어플라이드 머티어리얼스, 인코포레이티드 연속적 반경 측정에 의한 웨이퍼 엣지 특성화

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US6894491B2 (en) * 2002-12-23 2005-05-17 Lam Research Corporation Method and apparatus for metrological process control implementing complementary sensors
US7204639B1 (en) * 2003-09-26 2007-04-17 Lam Research Corporation Method and apparatus for thin metal film thickness measurement
US7667588B2 (en) * 2004-09-27 2010-02-23 Siemens Industry, Inc. Cage telemetry module and system
US7173418B2 (en) * 2005-06-30 2007-02-06 Lam Research Corporation Methods and apparatus for optimizing an electrical response to a set of conductive layers on a substrate
US7537511B2 (en) * 2006-03-14 2009-05-26 Micron Technology, Inc. Embedded fiber acoustic sensor for CMP process endpoint
JP5513821B2 (ja) * 2009-09-17 2014-06-04 株式会社荏原製作所 渦電流センサ、研磨装置、めっき装置、研磨方法、めっき方法
US9275917B2 (en) 2013-10-29 2016-03-01 Applied Materials, Inc. Determination of gain for eddy current sensor
US9281253B2 (en) 2013-10-29 2016-03-08 Applied Materials, Inc. Determination of gain for eddy current sensor
US9636797B2 (en) 2014-02-12 2017-05-02 Applied Materials, Inc. Adjusting eddy current measurements
US10818564B2 (en) * 2016-03-11 2020-10-27 Applied Materials, Inc. Wafer processing tool having a micro sensor
JP2018083267A (ja) * 2016-11-25 2018-05-31 株式会社荏原製作所 研磨装置及び研磨方法
US11199605B2 (en) 2017-01-13 2021-12-14 Applied Materials, Inc. Resistivity-based adjustment of measurements from in-situ monitoring
TWI816620B (zh) 2017-04-21 2023-09-21 美商應用材料股份有限公司 使用神經網路來監測的拋光裝置
TWI825075B (zh) 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
CN118943037A (zh) 2018-09-26 2024-11-12 应用材料公司 针对原位电磁感应监测的边缘重建中的基板掺杂的补偿
CN109341508B (zh) * 2018-12-12 2021-05-18 爱德森（厦门）电子有限公司 一种在役钢轨轨腰厚度非接触检测装置及方法
KR20250073489A (ko) 2020-05-14 2025-05-27 어플라이드 머티어리얼스, 인코포레이티드 연마 동안의 인-시튜 모니터링에 사용하기 위한 신경망을 훈련시키기 위한 기법 및 연마 시스템
JP7447284B2 (ja) 2020-06-24 2024-03-11 アプライド マテリアルズ インコーポレイテッド 研磨パッドの摩耗補償による基板層の厚さの決定
US20250087462A1 (en) * 2023-09-08 2025-03-13 Applied Materials, Inc. Radio-frequency (rf) matching network and tuning technique

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US3815017A (en) * 1967-02-23 1974-06-04 M Brunner Beat frequency method and apparatus for measuring the thickness of a layer of material overlying a metallic surface
JPS63107022A (ja) * 1986-10-24 1988-05-12 Hitachi Ltd マスクとウエハ間の間隙測定装置
JPH0158110U (https=) * 1987-10-07 1989-04-11
JPH01129607U (https=) * 1988-02-18 1989-09-04
DE4327712C2 (de) * 1993-08-18 1997-07-10 Micro Epsilon Messtechnik Sensoranordnung und Verfahren zum Erfassen von Eigenschaften der Oberflächenschicht eines metallischen Targets
US5559428A (en) * 1995-04-10 1996-09-24 International Business Machines Corporation In-situ monitoring of the change in thickness of films
JPH08339982A (ja) * 1995-06-13 1996-12-24 Toshiba Corp 半導体製造装置及び半導体装置の製造方法
DE59610353D1 (de) * 1995-12-22 2003-05-22 Siemens Ag Bestimmung der dicke einer elektrisch leitfähigen schicht
JP3220937B2 (ja) * 1997-09-05 2001-10-22 株式会社東京精密 ウェーハ研磨装置
JP2000283702A (ja) * 1999-03-31 2000-10-13 Fotonikusu:Kk 距離センサおよび距離測定装置
JP3854056B2 (ja) * 1999-12-13 2006-12-06 株式会社荏原製作所 基板膜厚測定方法、基板膜厚測定装置、基板処理方法及び基板処理装置
US6894491B2 (en) * 2002-12-23 2005-05-17 Lam Research Corporation Method and apparatus for metrological process control implementing complementary sensors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100971839B1 (ko) * 2007-09-24 2010-07-22 어플라이드 머티어리얼스, 인코포레이티드 연속적 반경 측정에 의한 웨이퍼 엣지 특성화

Also Published As

Publication number Publication date
US6922053B2 (en) 2005-07-26
CN1732369A (zh) 2006-02-08
WO2004059242A1 (en) 2004-07-15
US6894491B2 (en) 2005-05-17
TW200422588A (en) 2004-11-01
CN100347516C (zh) 2007-11-07
AU2003297336A1 (en) 2004-07-22
US20040119468A1 (en) 2004-06-24
EP1576336A1 (en) 2005-09-21
US20050007107A1 (en) 2005-01-13
TWI227775B (en) 2005-02-11
JP2006511801A (ja) 2006-04-06

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Date Code Title Description
PA0105 International application

Patent event date: 20050621

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid