KR20050070345A - 저기포성 감방사선성 조성물용 현상액 - Google Patents
저기포성 감방사선성 조성물용 현상액 Download PDFInfo
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- KR20050070345A KR20050070345A KR1020030099760A KR20030099760A KR20050070345A KR 20050070345 A KR20050070345 A KR 20050070345A KR 1020030099760 A KR1020030099760 A KR 1020030099760A KR 20030099760 A KR20030099760 A KR 20030099760A KR 20050070345 A KR20050070345 A KR 20050070345A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
실시예 | 비교예1 | 비교예2 | 1 | 2 | 3 | 4 | 5 | 6 | |
현상액조성비(중량%) | 화학식 1의 계면활성제(M-TSP1026) | 13 | - | 12 | 11 | 10 | 8 | 12 | 10 |
화학식 2의 계면활성제(Surfynol 465) | - | 13 | 1 | 2 | 3 | 5 | 1 | 3 | |
알칼리성 화합물(KOH) | 4 | 4 | 4 | 4 | 4 | 4 | 5 | 5 | |
초순수 | 현상액을 100 중량%로 만드는 잔량 | ||||||||
물성 | pH (100배 희석액) | 11.8 | 11.8 | 11.8 | 11.9 | 11.9 | 11.9 | 11.9 | 11.9 |
표면장력 (mN/m) | 42.4 | 38.9 | 41.8 | 41.0 | 40.2 | 39.8 | 42.0 | 40.4 | |
저기포성 | 4 | 5 | 5 | 5 | 5 | 5 | 5 | 5 | |
유화분산성 | 5 | 1 | 5 | 5 | 5 | 4 | 5 | 4 | |
시간경과에 따른 변화 | 우수 | 우수 | 우수 | 우수 | 우수 | 우수 | 우수 | 우수 | |
현상력 | 칼라포토레지스트 | 3 | 2 | 5 | 5 | 5 | 5 | 5 | 5 |
블랙메트릭스 | 2 | 2 | 5 | 5 | 5 | 4 | 5 | 4 | |
포토스페이서 | 3 | 3 | 5 | 5 | 5 | 5 | 5 | 5 |
실시예 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | |
현상액조성비(중량%) | 화학식 1의 계면활성제(M-TSP1026) | 8 | 8 | 10 | 12 | 14 | 16 | 18 |
화학식 2의 계면활성제(Surfynol 465) | 5 | 2 | 2 | 2 | 2 | 2 | 2 | |
알칼리성 화합물(KOH) | 5 | 4 | 4 | 4 | 4 | 4 | 4 | |
초순수 | 현상액을 100 중량%로 만드는 잔량 | |||||||
물성 | pH (100배 희석액) | 11.9 | 11.8 | 11.9 | 11.9 | 11.9 | 11.9 | 11.9 |
표면장력 (mN/m) | 39.9 | 38.4 | 40.5 | 40.6 | 41.0 | 41.1 | 41.5 | |
저기포성 | 5 | 5 | 5 | 5 | 4 | 4 | 4 | |
유화분산성 | 3 | 4 | 5 | 5 | 5 | 5 | 5 | |
시간경과에 따른 변화 | 우수 | 우수 | 우수 | 우수 | 우수 | 우수 | 우수 | |
현상력 | 칼라포토레지스트 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
블랙메트릭스 | 4 | 4 | 5 | 5 | 5 | 4 | 4 | |
포토스페이서 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
Claims (6)
- 하기 화학식 1의 비이온성 계면활성제 5 ~ 20 중량%, 하기 화학식 2의 비이온성 계면활성제 0.5 ~ 5 중량%, 알칼리성 화합물 1 ~ 10 중량% 및 잔량의 물을 함유하는 저기포성 감방사선성 조성물용 현상액:[화학식 1](상기 화학식 1에서, n은 1 내지 3인 정수이고, AO는 옥시에틸렌기, 옥시프로필렌기 및 폴리옥시에틸렌·폴리옥시프로필렌 블록 공중합체로 이루어진 군으로부터 선택된 일종 이상이며, m은 5 내지 30인 정수이다)[화학식 2](상기 화학식 2에서, AO는 옥시에틸렌기, 옥시프로필렌기 및 폴리옥시에틸렌·폴리옥시프로필렌 블록 공중합체로 이루어진 군으로부터 선택된 일종 이상이고 , n은 1 내지 40인 정수이다).
- 제 1 항에 있어서, 화학식 1의 비이온성 계면활성제는 그의 HLB가 12 ~ 15 이고, 표면장력이 38 ~ 45 dyne/cm인 저기포성 감방사선성 조성물용 현상액.
- 제 1 항에 있어서, 화학식 1의 비이온성 계면활성제의 함량이 10 내지 15 중량%인 저기포성 감방사선성 조성물용 현상액.
- 제 1 항에 있어서, 화학식 2의 비이온성 계면활성제는, 그의 HLB가 8 ~ 18 이고, 표면장력이 35 ~ 45 dyne/cm인 저기포성 감방사선성 조성물용 현상액.
- 제 1 항에 있어서, 화학식 2의 비이온성 계면활성제의 함량이 1 내지 3 중량%인 저기포성 감방사선성 조성물용 현상액.
- 제 1 항에 있어서, 알칼리성 화합물은 수산화칼륨, 수산화나트륨, 탄산나트륨으로 이루어진 군으로부터 선택되는 저기포성 감방사선성 조성물용 현상액.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0099760A KR100539212B1 (ko) | 2003-12-30 | 2003-12-30 | 저기포성 감방사선성 조성물용 현상액 |
CNB200410102993XA CN100476597C (zh) | 2003-12-30 | 2004-12-29 | 感放射线性组合物用低泡沫显影液 |
TW93141056A TWI297420B (en) | 2003-12-30 | 2004-12-29 | Low foaming developer for radiation sensitive composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0099760A KR100539212B1 (ko) | 2003-12-30 | 2003-12-30 | 저기포성 감방사선성 조성물용 현상액 |
Publications (2)
Publication Number | Publication Date |
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KR20050070345A true KR20050070345A (ko) | 2005-07-07 |
KR100539212B1 KR100539212B1 (ko) | 2005-12-28 |
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KR10-2003-0099760A KR100539212B1 (ko) | 2003-12-30 | 2003-12-30 | 저기포성 감방사선성 조성물용 현상액 |
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KR (1) | KR100539212B1 (ko) |
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KR100539212B1 (ko) | 2005-12-28 |
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