KR20050069758A - Wafer detect method - Google Patents

Wafer detect method Download PDF

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Publication number
KR20050069758A
KR20050069758A KR1020030102164A KR20030102164A KR20050069758A KR 20050069758 A KR20050069758 A KR 20050069758A KR 1020030102164 A KR1020030102164 A KR 1020030102164A KR 20030102164 A KR20030102164 A KR 20030102164A KR 20050069758 A KR20050069758 A KR 20050069758A
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South Korea
Prior art keywords
wafer
broken
led
normal
cool down
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KR1020030102164A
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Korean (ko)
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김규성
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동부아남반도체 주식회사
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Priority to KR1020030102164A priority Critical patent/KR20050069758A/en
Publication of KR20050069758A publication Critical patent/KR20050069758A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 발명은 웨이퍼 검출 방법에 있어서, 송신용 LED와 수신용 LED를 쿨 다운 챔버 위 좌우에 설치하는 단계, 쿨 다운이 끝나면 리프트 핀이 업되어 웨이퍼를 들어 올리는 단계, 상기 리프트 핀이 업될때 웨이퍼의 깨짐 여부를 송신용 LED에서 나온 빛이 수신용 LED에 수신되는가의 여부에 따라 판단하는 단계 및 상기 웨이퍼의 깨짐 여부 판단 단계에서 웨이퍼가 정상인 경우에는 정상적인 후속공정을 진행하고, 웨이퍼가 깨짐 상태인 경우에는 장비의 구동을 중지하고 깨진 웨이퍼를 제거하는 단계를 포함하는 것을 특징으로 한다.The present invention provides a method for detecting a wafer, comprising: installing a transmitting LED and a receiving LED on the left and right sides of a cooling down chamber, lifting the lift pin by lifting the wafer after the cooling down is completed, and when the lift pin is up, If the wafer is normal in the step of determining whether the light from the transmitting LED is received by the receiving LED and whether the wafer is broken in the step of determining whether or not the wafer is broken, if the wafer is normal, proceed with the normal subsequent process, if the wafer is broken The method includes stopping the driving of the equipment and removing the broken wafer.

본 발명에 의해서 쿨 다운 챔버에 웨이퍼 센서를 설치함에 의해 웨이퍼의 깨짐 유무를 파악함으로써 원가절감 및 장비 가동시간을 향상시킬 수 있는 효과가 있다. According to the present invention, the wafer sensor is installed in the cool down chamber to determine whether the wafer is broken, thereby reducing the cost and improving the equipment uptime.

Description

웨이퍼 검출 방법{Wafer Detect method} Wafer Detect Method

본 발명은 웨이퍼 검출 방법에 관한 것으로서, 특히 RTP(Rapid Thermal Processing) 장비의 쿨 다운 챔버(Cooldown Chamber)에 웨이퍼 센서를 설치하여 웨이퍼 깨짐으로 인한 웨이퍼 블레이드 및 리프트 핀을 보호하여 장비의 가동시간을 향상시키기 위한 웨이퍼 검출 방법에 관한 것이다.The present invention relates to a wafer detection method, and more particularly, to install a wafer sensor in a cooldown chamber of a rapid thermal processing (RTP) equipment to protect wafer blades and lift pins due to wafer cracking, thereby improving equipment uptime. The present invention relates to a wafer detection method.

AMAT사의 RTP 장비에는 공정을 진행하는 공정챔버, 공정후 뜨거운 온도를 식혀주는 쿨 다운 챔버가 있다. 그러나 공정 진행 후 물에 의한 쿨 다운중 급속한 온도차이에 의해 웨이퍼가 깨지는 현상이 나타나게 된다.AMAT's RTP equipment includes a process chamber for processing and a cool down chamber for cooling hot temperatures after processing. However, the wafer breaks due to the rapid temperature difference during the cooldown by water after the process.

쿨 다운 챔버에서 웨이퍼의 깨짐이 발생하면 웨이퍼 센서가 쿨 다운 챔버 외부에 위치하기 때문에 웨이퍼 블레이드가 웨이퍼를 언로딩하기 위해 쿨 다운 챔버로 들어가다가 깨진 웨이퍼에 부딪혀 웨이퍼 블레이드 및 쿨다운 챔버 리프트 핀이 깨지게 된다. If a wafer break occurs in the cool down chamber, the wafer sensor is located outside the cool down chamber, so the wafer blade enters the cool down chamber to unload the wafer and hits the broken wafer to break the wafer blade and the cool down chamber lift pins. do.

따라서, 본 발명이 이루고자 하는 기술적 과제는 상기한 종래의 기술이 가지는 단점을 개선하기 위하여 RTP장비의 쿨 다운 챔버에 웨이퍼 센서를 설치하여 웨이퍼의 깨짐으로 인한 웨이퍼 블레이드 및 리프트 핀을 보호하기 위한 방법을 제공하는 데 있다. Therefore, the technical problem to be achieved by the present invention is to install a wafer sensor in the cool down chamber of the RTP equipment to improve the disadvantages of the prior art to provide a method for protecting the wafer blades and lift pins due to cracking of the wafer To provide.

상기한 기술적 과제를 달성하기 위하여, 본 발명은 웨이퍼 검출 방법에 있어서, 송신용 LED와 수신용 LED를 쿨 다운 챔버 위 좌우에 설치하는 단계, 쿨 다운이 끝나면 리프트 핀이 업되어 웨이퍼를 들어 올리는 단계, 상기 리프트 핀이 업될때 웨이퍼의 깨짐 여부를 송신용 LED에서 나온 빛이 수신용 LED에 수신되는가의 여부에 따라 판단하는 단계 및 상기 웨이퍼의 깨짐 여부 판단 단계에서 웨이퍼가 정상인 경우에는 정상적인 후속공정을 진행하고, 웨이퍼가 깨짐 상태인 경우에는 장비의 구동을 중지하고 깨진 웨이퍼를 제거하는 단계를 포함하는 것을 특징으로 한다. In order to achieve the above technical problem, the present invention, in the wafer detection method, the step of installing the transmitting LED and the receiving LED on the left and right on the cool down chamber, the lift pin is lifted up to lift the wafer after the cool down Determining whether the wafer is broken when the lift pin is up based on whether the light from the transmitting LED is received by the receiving LED, and if the wafer is normal in the determining whether the wafer is broken, a normal subsequent process is performed. Proceeding, if the wafer is broken state characterized in that it comprises the step of stopping the operation of the equipment and removing the broken wafer.

또한, 상기 리프트는 120도 간격으로 3개의 핀이 배치되는 것을 특징으로 한다.In addition, the lift is characterized in that three pins are arranged at intervals of 120 degrees.

본 발명의 상기 목적과 기술적 구성 및 그에 따른 작용효과에 관한 자세한 사항은 본 발명의 바람직한 실시예를 도시하고 있는 도면을 참조한 이하 상세한 설명에 의해 보다 명확하게 이해될 것이다.Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

도1은 본 발명에 의한 웨이퍼가 정상적인 상태의 웨이퍼 검출시스템의 동작을 설명하기 위한 도면, 도2는 도1의 웨이퍼 검출시스템 상면도 및 도3은 본 발명에 의한 웨이퍼가 깨진 경우의 웨이퍼 검출시스템의 동작을 설명하기 위한 도면이다.1 is a view for explaining the operation of the wafer detection system of the wafer normal state according to the present invention, Figure 2 is a top view of the wafer detection system of Figure 1 and Figure 3 is a wafer detection system when the wafer is broken according to the present invention Is a diagram for explaining the operation of.

도1과 같이 송신용 LED와 수신용 LED를 쿨 다운 챔버 위의 좌우에 설치하여 송신용 LED에서 송신한 빛이 정상적인 상태의 웨이퍼 표면에서 반사되어 수신용 LED에서 검출되게 된다.As shown in FIG. 1, the transmitting LED and the receiving LED are installed on the left and right sides of the cool down chamber so that the light transmitted from the transmitting LED is reflected from the wafer surface in a normal state and detected by the receiving LED.

쿨 다운이 끝나면 120도의 간격을 가진 3개의 리프드 핀이 업(up)되어 웨이퍼를 들어 올리게 되며, 만약 웨이퍼가 깨져 있는 상태(도3 참조)이면 송신용 LED에서 나온 빛이 웨이퍼에 의해 반사되지 못해 웨이퍼 깨짐상태라고 센서가 감지하게 된다. 그리고, 장비의 구동을 중지하고 깨진 웨이퍼를 제거한다.At the end of the cool down, three lift pins with a 120-degree gap are up to lift the wafer. If the wafer is broken (see Figure 3), the light from the transmitting LED is not reflected by the wafer. The sensor detects that the wafer is broken. Then, the drive is stopped and the broken wafer is removed.

웨이퍼가 깨지지 않은 정상적인 상태라면, 송신용 LED에서 나온 빛은 웨이퍼에 반사되어 수신용 LED에 입력되면 정상 상태라 판단하고 이후의 공정을 진행하게 된다.If the wafer is not broken, the light emitted from the LED for transmission is reflected on the wafer and input to the LED for reception.

도2는 웨이퍼가 정상일 때 LED의 빛이 웨이퍼에 반사되어 수신용 LED로 보내 지고 있음을 나타내고 있으며, 도3은 웨이퍼가 깨져 빛이 반사되지 못하므로 웨이퍼 깨짐이라는 에러 신호를 발생하게 된다.2 shows that the light of the LED is reflected to the wafer and sent to the receiving LED when the wafer is normal, and FIG. 3 generates an error signal of wafer breaking because the wafer is broken and no light is reflected.

단, 웨이퍼 센서로 확인할 수 있는 방법은 쿨다운 리프트 핀이 업인 상태에서만 가능한 것에 유의하여야 한다.However, it should be noted that the method which can be confirmed by the wafer sensor is possible only when the cooldown lift pin is up.

상세히 설명된 본 발명에 의하여 본 발명의 특징부를 포함하는 변화들 및 변형들이 당해 기술 분야에서 숙련된 보통의 사람들에게 명백히 쉬워질 것임이 자명하다. 본 발명의 그러한 변형들의 범위는 본 발명의 특징부를 포함하는 당해 기술 분야에 숙련된 통상의 지식을 가진 자들의 범위 내에 있으며, 그러한 변형들은 본 발명의 청구항의 범위 내에 있는 것으로 간주된다. It will be apparent that changes and modifications incorporating features of the invention will be readily apparent to those skilled in the art by the invention described in detail. It is intended that the scope of such modifications of the invention be within the scope of those of ordinary skill in the art including the features of the invention, and such modifications are considered to be within the scope of the claims of the invention.

상술한 바와 같이 본 발명의 웨이퍼 검출 방법에 의해서 쿨 다운 챔버에 웨이퍼 센서를 설치함에 의해 웨이퍼의 깨짐 유무를 파악함으로써 원가절감 및 장비 가동시간을 향상시킬 수 있는 효과가 있다.As described above, by installing the wafer sensor in the cool down chamber by the wafer detection method of the present invention, it is possible to reduce the cost and improve the equipment uptime by determining whether the wafer is broken.

도1은 본 발명에 의한 웨이퍼가 정상적인 상태의 웨이퍼 검출시스템의 동작을 설명하기 위한 도면.BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view for explaining the operation of a wafer detection system in a normal state of a wafer according to the present invention;

도2는 도1의 웨이퍼 검출시스템의 상면도.2 is a top view of the wafer detection system of FIG.

도3은 본 발명에 의한 웨이퍼가 깨진 경우의 웨이퍼 검출시스템의 동작을 설명하기 위한 도면. 3 is a view for explaining the operation of the wafer detection system when the wafer is broken according to the present invention;

Claims (2)

웨이퍼 검출 방법에 있어서,In the wafer detection method, 송신용 LED와 수신용 LED를 쿨 다운 챔버 위 좌우에 설치하는 단계;Installing the transmitting LED and the receiving LED on the left and right on the cool down chamber; 쿨 다운이 끝나면 리프트 핀이 업되어 웨이퍼를 들어 올리는 단계;When the cool down is finished, the lift pin is up to lift the wafer; 상기 리프트 핀이 업될때 웨이퍼의 깨짐 여부를 송신용 LED에서 나온 빛이 수신용 LED에 수신되는가의 여부에 따라 판단하는 단계; 및Determining whether the wafer is broken when the lift pin is up depending on whether the light from the transmitting LED is received by the receiving LED; And 상기 웨이퍼의 깨짐 여부 판단 단계에서 웨이퍼가 정상인 경우에는 정상적인 후속공정을 진행하고, 웨이퍼가 깨짐 상태인 경우에는 장비의 구동을 중지하고 깨진 웨이퍼를 제거하는 단계In the step of determining whether the wafer is broken, if the wafer is normal, a normal subsequent process is performed, and if the wafer is broken, the driving of the equipment is stopped and the broken wafer is removed. 를 포함하는 것을 특징으로 하는 웨이퍼 검출 방법.Wafer detection method comprising a. 제1항에 있어서,The method of claim 1, 상기 리프트 핀은 120도 간격으로 3개의 핀이 배치되는 것을 특징으로 하는 웨이퍼 검출 방법.The lift pin is a wafer detection method, characterized in that three pins are arranged at intervals of 120 degrees.
KR1020030102164A 2003-12-31 2003-12-31 Wafer detect method KR20050069758A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110767563A (en) * 2019-10-25 2020-02-07 上海华力集成电路制造有限公司 Method for detecting wafer integrity and RTP machine
CN112233992A (en) * 2020-09-10 2021-01-15 上海华力集成电路制造有限公司 Wafer fragment detection device and use method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110767563A (en) * 2019-10-25 2020-02-07 上海华力集成电路制造有限公司 Method for detecting wafer integrity and RTP machine
CN110767563B (en) * 2019-10-25 2022-05-27 上海华力集成电路制造有限公司 Method for detecting wafer integrity and RTP machine
CN112233992A (en) * 2020-09-10 2021-01-15 上海华力集成电路制造有限公司 Wafer fragment detection device and use method thereof

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