CN112233992A - Wafer fragment detection device and use method thereof - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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Abstract
The invention relates to a wafer fragment detection device, in particular to a semiconductor integrated circuit manufacturing device, which is characterized in that at least two groups of emitters and receivers are arranged on a process cavity, the receivers are used for receiving light emitted by the emitters corresponding to the receivers, each group of emitters and receivers are correspondingly arranged on two side walls of the process cavity, a light processor receives the light emitted by the emitters and the light received by the receivers and outputs a light difference signal, if the light difference signal output by any one of the light processors is less than a threshold value in the processing process of a wafer, a wafer fragment phenomenon is considered to occur, and if the light difference signal output by any one of the light processors is greater than the threshold value before the next wafer is placed in the process cavity, a residual wafer fragment is considered to exist in the process cavity, so that whether the wafer fragment exists in the processing process of the wafer can be detected, and whether the residual fragment of the wafer exists in the cavity can be detected after the wafer is moved out of the process cavity, and the detection area can be increased.
Description
Technical Field
The present invention relates to semiconductor integrated circuit manufacturing equipment, and more particularly, to a wafer breakage detecting apparatus.
Background
With the development of semiconductor technology, the yield of semiconductor products is required to be higher and higher, and thus the process requirements in the manufacturing process are also stricter.
Then, in the existing process, the wafer is prone to be broken in a machine cavity, such as a rapid annealing machine, and it is desirable to find the broken wafer in time during the manufacturing process of the wafer to save the subsequent process. In addition, it is desirable to find the fragments in the chamber in time to avoid the wafer fragments remaining in the chamber from scratching the subsequent wafer and affecting the yield.
Disclosure of Invention
The invention provides a wafer fragment detection device, comprising: the process cavity is used for processing the wafer; at least two groups of photodetectors, each group of photodetectors comprises a transmitter, a receiver and an optical processor, the receiver is used for receiving optical signals sent by the corresponding transmitter, the transmitter and the receiver of each group are arranged on two side walls of the process cavity, the two side walls are positioned at the upper side and the lower side of the wafer, the optical processor is connected with the transmitter and the receiver, receives the optical signals sent by the transmitter and the optical signals received by the receiver, compares the difference between the optical signals sent by the transmitter and the optical signals received by the receiver, and outputs an optical difference signal, in the processing process of the wafer, if the optical difference signal output by any one of the optical processors is less than a threshold value, the wafer is considered to be broken in the cavity, after the wafer is processed, the wafer is removed, and before the next wafer is placed in the process cavity, if the optical difference signal output by any one of the optical processors, it is assumed that there are residual wafer fragments in the process chamber.
Furthermore, the signal conversion module receives the optical difference signal and converts the optical difference signal into an electrical signal; and the controller is used for receiving the electric signal output by the signal conversion module and determining whether to send out a warning signal or not according to the electric signal, wherein in the processing process of the wafer, if the wafer fragment phenomenon occurs in the cavity, or after the wafer is processed, the wafer is moved out, and before the next wafer is placed in the process cavity, if the wafer fragment remained in the process cavity is considered, the controller sends out the warning signal.
Furthermore, each set of transmitter and receiver is symmetrically disposed on the two sidewalls of the process chamber.
Further, the emitter and the receiver of one of the sets of photodetectors are positioned at a center of the two sidewalls of the process chamber.
Furthermore, the set of photodetectors is a photodetector carried by the machine.
Further, the emitters and receivers of the other set of photodetectors are located near the edges of the two sidewalls of the process chamber.
Further, the light signal emitted by the emitter is infrared light.
The invention also provides a use method of the wafer fragment detection device, which comprises the following steps: s1: starting up, the emitter sends out the optical signal, the receiver corresponding to the emitter receives the optical signal sent out by the emitter, the optical processor is connected with the emitter and the receiver, receives the optical signal sent out by the emitter and the optical signal received by the receiver, compares the difference between the optical signal sent out by the emitter and the optical signal received by the receiver, and outputs an optical difference signal; s2: providing a wafer, placing the wafer in a process cavity, and carrying out a wafer processing process, wherein in the processing process of the wafer, if an optical difference signal output by any one of optical processors is less than a threshold value, a wafer fragment phenomenon is considered to occur; s3: and after the wafer is processed, moving out the wafer, and before the next wafer is placed in the process cavity, if the light difference signal output by any one of the light processors is greater than a threshold value, determining that residual wafer fragments exist in the process cavity.
Furthermore, in the processing process of the wafer, if the light difference signal output by any one of the light processors is smaller than a threshold value, the electric signal output by the signal conversion module according to the light difference signal output by the light processor enables the controller to send out a warning signal.
Furthermore, after the wafer is processed, the wafer is removed, and before the next wafer is placed in the process chamber, if the light difference signal output by any one of the optical processors is greater than a threshold value, the signal conversion module enables the controller to send out a warning signal according to the electric signal output by the light difference signal output by the optical processor.
Thus, at least two groups of emitters and receivers are arranged on a process cavity for processing the wafer, the receivers are used for receiving light emitted by the corresponding emitters, each group of emitters and receivers are arranged on two side walls of the process cavity, the two side walls are positioned on the upper side and the lower side of the wafer, each group of emitters and receivers are connected with an optical processor, the optical processor receives the light emitted by the emitters and the light received by the receivers, compares the difference between the light emitted by the emitters and the light received by the receivers and outputs an optical difference signal, if the optical difference signal output by any one of the optical processors is less than a threshold value in the processing process of the wafer, the wafer is considered to be broken, after the processing of the wafer is finished, the wafer is removed, and before the next wafer is arranged in the process cavity, if the optical difference signal output by any one of the optical processors is greater than the threshold value, the wafer fragment remaining in the process cavity is considered to exist, so that whether the wafer fragment occurs in the wafer processing process or not can be detected, whether the wafer fragment remaining in the process cavity exists or not can be detected after the wafer is moved out of the process cavity, the wafer detection area can be increased, and the situation that the wafer cannot be detected due to wafer damage is effectively avoided.
Drawings
Fig. 1 is a schematic view of a wafer fragment detection apparatus according to an embodiment of the invention.
Detailed Description
The technical solutions in the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and the same reference numerals denote the same elements throughout. It will be understood that when an element or layer is referred to as being "on" …, "adjacent to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relationship terms such as "under …", "under …", "below", "under …", "above …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below …" and "below …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In an embodiment of the present invention, a wafer fragment detection apparatus is provided, and specifically, referring to fig. 1, fig. 1 is a schematic view of a wafer fragment detection apparatus according to an embodiment of the present invention, as shown in fig. 1, the wafer fragment detection apparatus includes: the process chamber 110 is used for processing the wafer; at least two sets of photodetectors 120, 130, each set of photodetectors includes a transmitter 121, 131, a receiver 122, 132 and a light processor 123, 133, the receiver 122, 132 is used to receive the light signals emitted by the corresponding transmitter 121, 131, and each set of transmitter and receiver is disposed on two side walls of the process chamber, the two side walls are located on the upper and lower sides of the wafer, the light processor 123, 133 is connected to the transmitter 121, 131 and the receiver 122, 132, receives the light signals emitted by the transmitter 121, 131 and the light signals received by the receiver 122, 132, and compares the difference between the light signals emitted by the transmitter 121, 131 and the light signals received by the receiver 122, 132, and outputs a light difference signal, during the processing of the wafer, if the light difference signal output by any one of the light processors is less than a threshold value, it is determined that a wafer breakage phenomenon occurs in the chamber, after the wafer processing is completed, and moving out the wafer, and determining that residual wafer fragments exist in the process cavity if the light difference signal output by any one of the light processors is greater than a threshold value before the next wafer is placed in the process cavity.
In an embodiment, the wafer fragment detection apparatus further includes: a signal conversion module 140 for receiving the optical difference signal and converting the optical difference signal into an electrical signal; and a controller 150 for receiving the electrical signal output by the signal conversion module 140 and determining whether to send a warning signal according to the electrical signal, wherein in the wafer processing process, if a wafer fragment phenomenon occurs in the cavity, or after the wafer is processed, the wafer is removed and a next wafer is placed in the process cavity, and if a residual wafer fragment is determined in the process cavity, the controller 150 sends a warning signal to warn the machine station that the fragment needs to be processed.
In one embodiment, as shown in FIG. 1, each set of transmitter and receiver is symmetrically disposed on two sidewalls of the process chamber.
In one embodiment, as shown in FIG. 1, the emitters 131 and receivers 132 of the second set of photodetectors 130 are located at the center of the two sidewalls of the process chamber. In one embodiment, the second set of photodetectors 130 are self-contained photodetectors of the tool. In one embodiment, as shown in FIG. 1, the emitters 121 and receivers 122 of the first set of photodetectors 120 are located near the edges of the two sidewalls of the process chamber. Therefore, the wafer detection area is increased, and the situation that the wafer cannot be detected due to damage is effectively avoided.
In one embodiment, the light signal emitted by the emitters 121, 131 is infrared light.
In one embodiment, the process chamber may be any process chamber of a tool used to process wafers, such as a rapid annealing tool.
In an embodiment of the present invention, a method for using the wafer fragment inspection apparatus is further provided, including:
s1: starting up, the emitters 121 and 131 send out optical signals, the receivers 122 and 132 corresponding to the emitters 121 and 131 receive the optical signals sent out by the emitters 121 and 131, the optical processors 123 and 133 are connected with the emitters 121 and 131 and the receivers 122 and 132, receive the optical signals sent out by the emitters 121 and 131 and the optical signals received by the receivers 122 and 132, compare the differences between the optical signals sent out by the emitters 121 and 131 and the optical signals received by the receivers 122 and 132, and output an optical difference signal;
s2: providing a wafer, placing the wafer in the process chamber 110, and performing a wafer processing process, wherein in the wafer processing process, if the optical difference signal output by any one of the optical processors 123, 133 is less than a threshold value, it is determined that a wafer fragment phenomenon occurs;
s3: after the wafer is processed, the wafer is removed, and before the next wafer is placed in the process chamber, if the light difference signal output by any one of the light processors 123 and 133 is greater than a threshold value, it is determined that there is a wafer fragment remaining in the process chamber.
In an embodiment, the method for using the wafer fragment detection apparatus further includes: in the wafer processing process, if the light difference signal output by any one of the light processors 123, 133 is smaller than a threshold, the signal conversion module 140 outputs an electrical signal according to the light difference signal output by the light processors 123, 133, so that the controller 150 sends out a warning signal; after the wafer is processed, the wafer is removed, and before the next wafer is placed in the process chamber, if the light difference signal output by any one of the light processors 123, 133 is greater than a threshold value, the signal conversion module 140 outputs an electrical signal according to the light difference signal output by the light processors 123, 133, so that the controller 150 sends out a warning signal.
As mentioned above, at least two sets of emitters and receivers are arranged on the process chamber for processing the wafer, the receivers are used for receiving the light emitted by the corresponding emitters, each set of emitters and receivers is arranged on two side walls of the process chamber, the two side walls are arranged on the upper side and the lower side of the wafer, each set of emitters and receivers is connected with an optical processor, the optical processor receives the light emitted by the emitters and the light received by the receivers, compares the difference between the light emitted by the emitters and the light received by the receivers and outputs an optical difference signal, in the processing process of the wafer, if the optical difference signal output by any one of the optical processors is less than a threshold value, the wafer is considered to be broken, after the wafer is processed, the wafer is moved out, and before the next wafer is arranged in the process chamber, if the optical difference signal output by any one of the optical processors is greater than a threshold value, the wafer fragment remaining in the process cavity is considered to exist, so that whether the wafer fragment occurs in the wafer processing process or not can be detected, whether the wafer fragment remaining in the process cavity exists or not can be detected after the wafer is moved out of the process cavity, the wafer detection area can be increased, and the situation that the wafer cannot be detected due to wafer damage is effectively avoided.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A wafer fragment detection device, comprising:
the process cavity is used for processing the wafer;
at least two groups of photodetectors, each group of photodetectors comprises a transmitter, a receiver and an optical processor, the receiver is used for receiving optical signals sent by the corresponding transmitter, the transmitter and the receiver of each group are arranged on two side walls of the process cavity, the two side walls are positioned at the upper side and the lower side of the wafer, the optical processor is connected with the transmitter and the receiver, receives the optical signals sent by the transmitter and the optical signals received by the receiver, compares the difference between the optical signals sent by the transmitter and the optical signals received by the receiver, and outputs an optical difference signal, in the processing process of the wafer, if the optical difference signal output by any one of the optical processors is less than a threshold value, the wafer is considered to be broken in the cavity, after the wafer is processed, the wafer is removed, and before the next wafer is placed in the process cavity, if the optical difference signal output by any one of the optical processors, it is assumed that there are residual wafer fragments in the process chamber.
2. The wafer fragment detection apparatus of claim 1, wherein the signal conversion module receives the optical difference signal and converts the optical difference signal into an electrical signal; and the controller is used for receiving the electric signal output by the signal conversion module and determining whether to send out a warning signal or not according to the electric signal, wherein in the processing process of the wafer, if the wafer fragment phenomenon occurs in the cavity, or after the wafer is processed, the wafer is moved out, and before the next wafer is placed in the process cavity, if the wafer fragment remained in the process cavity is considered, the controller sends out the warning signal.
3. The wafer fragment detection apparatus of claim 1 wherein each set of emitters and receivers are symmetrically disposed on the two sidewalls of the process chamber.
4. The wafer fragment detection apparatus of claim 1 wherein the emitters and receivers of the set of photodetectors are positioned at a center of the two sidewalls of the process chamber.
5. The wafer fragment detection apparatus of claim 4, wherein the set of photodetectors is a photodetector carried by a machine.
6. The wafer fragment detection apparatus of claim 4 wherein the emitters and receivers of the other set of photodetectors are located near the edges of the two sidewalls of the process chamber.
7. The wafer fragment detection apparatus of claim 1, wherein the optical signal emitted by the emitter is infrared light.
8. The method of using the wafer fragment inspection device of claim 1, comprising:
s1: starting up, the emitter sends out the optical signal, the receiver corresponding to the emitter receives the optical signal sent out by the emitter, the optical processor is connected with the emitter and the receiver, receives the optical signal sent out by the emitter and the optical signal received by the receiver, compares the difference between the optical signal sent out by the emitter and the optical signal received by the receiver, and outputs an optical difference signal;
s2: providing a wafer, placing the wafer in a process cavity, and carrying out a wafer processing process, wherein in the processing process of the wafer, if an optical difference signal output by any one of optical processors is less than a threshold value, a wafer fragment phenomenon is considered to occur;
s3: and after the wafer is processed, moving out the wafer, and before the next wafer is placed in the process cavity, if the light difference signal output by any one of the light processors is greater than a threshold value, determining that residual wafer fragments exist in the process cavity.
9. The use method of the wafer fragment detection apparatus as claimed in claim 8, wherein in the wafer processing process, if the light difference signal output by any one of the light processors is smaller than a threshold value, the signal conversion module outputs an electrical signal according to the light difference signal output by the light processor, so that the controller sends out a warning signal.
10. The use method of the wafer fragment detection apparatus of claim 8, wherein after the wafer is processed, the wafer is removed, and before the next wafer is placed in the process chamber, if the light difference signal output by any one of the light processors is greater than a threshold, the signal conversion module outputs an electrical signal according to the light difference signal output by the light processor, so that the controller sends out a warning signal.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113161279A (en) * | 2021-03-12 | 2021-07-23 | 拓荆科技股份有限公司 | Device and method for preventing wafer from cracking |
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| CN113161279A (en) * | 2021-03-12 | 2021-07-23 | 拓荆科技股份有限公司 | Device and method for preventing wafer from cracking |
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