CN211017007U - Processing device for wafer bonding and wafer bonding equipment - Google Patents
Processing device for wafer bonding and wafer bonding equipment Download PDFInfo
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- CN211017007U CN211017007U CN201921612884.0U CN201921612884U CN211017007U CN 211017007 U CN211017007 U CN 211017007U CN 201921612884 U CN201921612884 U CN 201921612884U CN 211017007 U CN211017007 U CN 211017007U
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Abstract
The embodiment of the application discloses a processing device for wafer bonding and wafer bonding equipment. The processing device includes: the first bearing table is used for bearing a first wafer to be bonded; the second bearing table is used for bearing a second wafer to be bonded, and the second bearing table is opposite to the bearing surface of the first bearing table; an ultrasonic generator is arranged on the bearing surface of the first bearing table; an ultrasonic receiver is arranged on the bearing surface of the second bearing table; the ultrasonic generator and the ultrasonic receiver are used for detecting the bonding precision of the first wafer and the second wafer through ultrasonic waves in the wafer bonding process.
Description
Technical Field
The embodiment of the application relates to semiconductor technology, and relates to, but is not limited to, a wafer bonding processing device and wafer bonding equipment.
Background
The wafer bonding technology is that two wafers are tightly bonded together through chemical or physical action, atoms of a bonding interface are acted by external force to react to form covalent bonds to be bonded into a whole, and the interface achieves certain bonding strength. In the three-dimensional integration process, the wafer bonding process is one of the core processes, wherein the wafer bonding alignment accuracy is an important parameter for measuring the wafer bonding process. The wafer bonding alignment precision can affect the electrical performance of the product, and the performance and yield of the product can be effectively improved by improving the bonding alignment precision.
Disclosure of Invention
In view of the above, embodiments of the present application provide a wafer bonding processing apparatus and a wafer bonding apparatus.
According to a first aspect of the embodiments of the present application, there is provided a processing apparatus for wafer bonding, including:
the first bearing table is used for bearing a first wafer to be bonded;
the second bearing table is used for bearing a second wafer to be bonded, and the second bearing table is opposite to the bearing surface of the first bearing table;
an ultrasonic generator is arranged on the bearing surface of the first bearing table; an ultrasonic receiver is arranged on the bearing surface of the second bearing table;
the ultrasonic generator and the ultrasonic receiver are used for detecting the bonding precision of the first wafer and the second wafer through ultrasonic waves in the wafer bonding process.
In some embodiments, the apparatus further comprises: the processing unit is used for determining a detection result according to the electric signal provided by the ultrasonic receiver;
the ultrasonic generator is specifically configured to: sending an ultrasonic signal from the first wafer to the second wafer in the wafer bonding process;
the ultrasonic receiver is specifically configured to: and receiving ultrasonic signals penetrating through the first wafer and the second wafer, converting the ultrasonic signals into electric signals and sending the electric signals to the processing unit.
In some embodiments, the ultrasonic generator is disposed at a center position of the bearing surface of the first bearing table, wherein a surface of the ultrasonic generator and the bearing surface of the first bearing table are located on the same plane;
the ultrasonic receiver is arranged at the central position of the second bearing table, wherein the ultrasonic receiver and the bearing surface of the second bearing table are positioned on the same plane.
In some embodiments, the carrying surface of the first carrying table faces horizontally upwards; the second bearing table is positioned above the first bearing table, and the bearing surface of the second bearing table faces downwards horizontally; the ultrasonic generator is vertically aligned with the ultrasonic receiver.
In some embodiments, at least two ultrasonic generators are arranged on the first bearing table, wherein the at least two ultrasonic generators are in central symmetry with respect to the center of the first bearing table;
at least two ultrasonic receivers are arranged on the second bearing table, wherein the at least two ultrasonic receivers are in central symmetry with the center of the second bearing table.
In some embodiments, the bearing surfaces of the first bearing table and the second bearing table are respectively provided with an adsorption assembly;
the adsorption assembly is used for fixing the first wafer on the bearing surface of the first bearing table; and the second wafer is fixed on the bearing surface of the second bearing table.
In some embodiments, the second carrier stage comprises: and the height adjusting assembly is used for adjusting the height of the second bearing table.
In some embodiments, the apparatus further comprises:
and the alignment component is used for adjusting the position of the first wafer and/or the second wafer.
In some embodiments, the alignment assembly comprises:
the alignment lens is used for determining the position offset of the first wafer and the second wafer by shooting alignment marks on the first wafer and the second wafer;
and the position adjusting component is used for adjusting the positions of the first wafer and/or the second wafer according to the position offset so as to align the alignment marks of the first wafer and the second wafer.
According to a second aspect of the embodiments of the present application, a wafer bonding apparatus is disclosed, which includes any one of the processing devices described above.
In the embodiment of the application, the ultrasonic generator and the ultrasonic receiver on the bearing table are used for detecting in real time in the wafer bonding process, so that the detection efficiency is effectively improved, and the bonding precision abnormality in the wafer bonding process can be timely found and correspondingly processed.
Drawings
Fig. 1 is a schematic view of a wafer bonding processing apparatus according to an embodiment of the present disclosure;
fig. 2 is a schematic view of another wafer bonding processing apparatus according to an embodiment of the present disclosure;
fig. 3 is a schematic view of another wafer bonding processing apparatus according to an embodiment of the present disclosure;
fig. 4 is a schematic view of another wafer bonding processing apparatus according to an embodiment of the present disclosure;
fig. 5 is a schematic view of another wafer bonding processing apparatus according to an embodiment of the present disclosure;
fig. 6 is a schematic diagram of detecting wafer bonding alignment accuracy by infrared light according to an embodiment of the present disclosure;
fig. 7 is a schematic plan view of a susceptor of a wafer bonding processing apparatus according to an embodiment of the present disclosure.
Detailed Description
An embodiment of the present application provides a processing apparatus for wafer bonding, as shown in fig. 1, the apparatus includes:
a first susceptor 110 for supporting a first wafer to be bonded;
a second susceptor 120 for supporting a second wafer to be bonded, the second susceptor being opposite to the supporting surface of the first susceptor;
an ultrasonic generator 111 is arranged on the bearing surface of the first bearing table; an ultrasonic receiver 121 is arranged on the bearing surface of the second bearing table;
the ultrasonic generator 111 and the ultrasonic receiver 121 are used for detecting the bonding accuracy of the first wafer and the second wafer through ultrasonic waves in the wafer bonding process.
In the process of wafer bonding, the two wafers are mutually attached under the control of the first bearing table and the second bearing table, so that the devices on the surfaces of the two wafers are aligned and tightly connected together. Since bonding accuracy, i.e., misalignment of alignment, inevitably occurs during the bonding of the wafer, the bonding process is monitored by ultrasonic waves.
The bonding precision can adopt electromagnetic waves such as infrared rays and the like, and the alignment condition inside the wafer is detected by penetrating the bonded wafer. However, electromagnetic waves such as infrared rays cannot penetrate metal materials. When the wafer surface to be bonded has a device made of metal or the like, a large deviation occurs in the detection using infrared rays. The ultrasonic wave can penetrate through metal or nonmetal materials, so that in the embodiment of the application, the ultrasonic wave generator and the ultrasonic wave receiver are respectively arranged on the two bearing tables, and the detection can be directly carried out in the process of bonding the wafer.
During the bonding process of the wafers, the ultrasonic generator emits ultrasonic waves, and the ultrasonic waves reach the ultrasonic receiver through the two wafers being bonded. After the ultrasonic receiver receives the ultrasonic signal, the ultrasonic signal sent out is compared with the received ultrasonic signal, and the position of bonding alignment abnormity in the wafer bonding process can be detected. Therefore, the alignment precision of wafer bonding is monitored in real time.
In some embodiments, the apparatus further comprises: the processing unit is used for determining a detection result according to the electric signal provided by the ultrasonic receiver;
the ultrasonic generator is specifically configured to: sending an ultrasonic signal from the first wafer to the second wafer in the wafer bonding process;
the ultrasonic receiver is specifically configured to: and receiving ultrasonic signals penetrating through the first wafer and the second wafer, converting the ultrasonic signals into electric signals and sending the electric signals to the processing unit.
The ultrasonic generator can send out ultrasonic signals in the wafer bonding process, and penetrates through the two wafers to reach the ultrasonic receiver.
In some embodiments, as shown in fig. 2, the ultrasonic generator 111 is disposed at a central position of the bearing surface of the first bearing platform 110, wherein a surface of the ultrasonic generator and the bearing surface of the first bearing platform are located on the same plane;
the ultrasonic receiver 121 is disposed at a center of the second bearing table 120, wherein the ultrasonic receiver and a bearing surface of the second bearing table are located on the same plane.
In order to uniformly send out and receive the ultrasonic signals, the ultrasonic generator and the ultrasonic receiver may be respectively disposed at the center positions of the first and second stages. The surfaces of the ultrasonic generator and the ultrasonic receiver and the bearing surface are positioned on the same plane and are tightly combined with the wafer in the wafer bonding process. The ultrasonic wave spreads from the center to the area of the wafer edge, thereby detecting the range of the whole wafer.
In some embodiments, the carrying surface of the first carrying table faces horizontally upwards; the second bearing table is positioned above the first bearing table, and the bearing surface of the second bearing table faces downwards horizontally; the ultrasonic generator is vertically aligned with the ultrasonic receiver.
The first bearing platform and the second bearing platform are vertically aligned and distributed, the bearing surface of the second bearing platform faces downwards, and the second wafer is fixed on the bearing surface in an adsorption mode. In the wafer bonding process, the second wafer can be attached to the surface of the first wafer through the movement of the second bearing table; and then carrying out wafer bonding to tightly adhere the first wafer and the second wafer together.
In some embodiments, as shown in fig. 3, at least two ultrasonic generators 111 are disposed on the first carrier table 110, wherein the at least two ultrasonic generators 111 are centered symmetrically with respect to the center of the first carrier table;
the second stage 120 is provided with at least two ultrasonic receivers 121, wherein the at least two ultrasonic receivers are centered and symmetrical with respect to the center of the second stage.
The bearing table can be also provided with a plurality of ultrasonic generators which are uniformly distributed on the surface of the bearing table. The setting positions of each ultrasonic generator and each ultrasonic receiver can be set according to actual requirements. Likewise, the ultrasonic receiver may be provided in plurality and at a suitable position on the second stage according to actual requirements.
In some embodiments, as shown in fig. 4, the carrying surfaces of the first carrying table 110 and the second carrying table 120 are respectively provided with a suction assembly 130;
the adsorption assembly is used for fixing the first wafer on the bearing surface of the first bearing table; and the second wafer is fixed on the bearing surface of the second bearing table.
In the process of wafer bonding, the wafer needs to be fixed on the bearing surface of the bearing table. Therefore, the bearing surface of the bearing table is also provided with an adsorption assembly for forming vacuum adsorption. The wafer is fixed on the bearing surface by atmospheric pressure by exhausting air between the wafer and the bearing surface.
The adsorption assembly can comprise air holes distributed on the bearing surface, the air holes are connected to the air pressure adjusting device through pipelines, and the wafer is adsorbed on the bearing surface by adjusting air pressure.
In some embodiments, as shown in fig. 5, the second carrier stage comprises: a height adjusting assembly 140 for adjusting the height of the second bearing platform.
Because the second bearing table is positioned above the first bearing table, the second wafer is moved to the upper part of the surface of the first wafer from top to bottom and is gradually attached to the first wafer. Therefore, the height of the second bearing table is adjusted through the height adjusting assembly, and therefore the bonding of the second wafer and the first wafer is controlled.
In some embodiments, the apparatus further comprises:
and the alignment component is used for adjusting the position of the first wafer and/or the second wafer.
Because the surfaces of the first wafer and the second wafer may have various complicated structures such as devices and routing lines, accurate alignment is required for wafer bonding of the first wafer and the second wafer, and if a large deviation occurs in alignment, the quality of the devices is seriously affected, resulting in poor products.
Therefore, the first wafer and the second wafer are aligned by the bit alignment, and when a positional deviation occurs, the wafer is moved in the horizontal direction to adjust the position.
In some embodiments, the alignment assembly comprises:
the alignment lens is used for determining the position offset of the first wafer and the second wafer by shooting alignment marks on the first wafer and the second wafer;
and the position adjusting component is used for adjusting the positions of the first wafer and/or the second wafer according to the position offset so as to align the alignment marks of the first wafer and the second wafer.
The alignment assembly is aligned by an alignment lens, such as a CCD (Charge-Coupled Device) lens, according to alignment marks on the first and second wafers. The positional deviation amount is calculated from the positional deviation in the captured image. The wafer is then horizontally aligned by the position adjustment assembly to perform alignment.
An embodiment of the present application further provides a wafer bonding apparatus, including any one of the processing devices provided in the above embodiments, or a combination of the processing devices in any one of the above embodiments.
Embodiments of the present disclosure also provide the following examples:
three-dimensional integration is a solution to improve chip performance while maintaining prior art nodes in the integrated circuit fabrication process. The performance of the chips can be improved by three-dimensional integration of two or more chips with the same or different functions, and simultaneously, the metal interconnection between the functional chips can be greatly shortened, so that the heat generation, the power consumption and the delay in the use process of the chips are reduced.
In the three-dimensional integration process, the bonding process of the wafer is the key point, wherein the wafer bonding alignment precision is the core parameter for measuring the wafer bonding process. According to the propagation behavior of the bonding wave under different parameters obtained by monitoring, the bonding alignment precision can be monitored, so that the optimization of the parameters is facilitated. The bonding wave here refers to a propagation phenomenon that occurs gradually during bonding of a wafer. For example, if bonding occurs from the center of the wafer to the outer edge of the wafer, the bonding wave may be considered as a propagation process from the inside to the outside, and if there is a difference in propagation of the bonding wave in each direction, it is indicated that there is a deviation in alignment accuracy in the bonding process.
The wafer bonding alignment accuracy in the three-dimensional integration process is an important factor affecting the overall defect rate of the product, for example, affecting the electrical performance of the product. Therefore, the bonding alignment precision is improved, and the performance and yield of products can be effectively improved.
In some embodiments, it may be possible to extrapolate back whether the current parameters are sufficiently optimized or stable by detecting the Residual of the product that has completed the wafer bonding. In this detection mode, repeated verification is required, so that the product is scrapped too much and the efficiency is low.
In other embodiments, real-time monitoring of wafer bonding may be performed by infrared light, but this approach is only applicable to wafer bonding processes with insulating materials that do not contain metallic materials. This approach is not suitable for dielectric-metal hybrid bonding, since infrared light can penetrate silicon but not metal, as shown in fig. 6.
Since ultrasonic waves can penetrate through dielectric and metal materials, as shown in fig. 7, in the embodiment of the present application, an ultrasonic generator 111 and an ultrasonic receiver 121 are respectively mounted on an upper chuck (carrier) and a lower chuck (carrier), that is, a first carrier 110 and a second carrier 120, so that ultrasonic detection is performed when wafer bonding starts, thereby realizing real-time monitoring of a bonding wave.
By the scheme, the propagation condition of the bonding wave can be monitored in real time, the parameter debugging period is shortened, waste caused during debugging is reduced, parameter optimization is facilitated, the wafer alignment precision is improved, and the product yield is improved.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above description is only for the embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A wafer bonding processing apparatus, the apparatus comprising:
the first bearing table is used for bearing a first wafer to be bonded;
the second bearing table is used for bearing a second wafer to be bonded, and the second bearing table is opposite to the bearing surface of the first bearing table;
an ultrasonic generator is arranged on the bearing surface of the first bearing table; an ultrasonic receiver is arranged on the bearing surface of the second bearing table;
the ultrasonic generator and the ultrasonic receiver are used for detecting the bonding precision of the first wafer and the second wafer through ultrasonic waves in the wafer bonding process.
2. The processing apparatus according to claim 1, wherein the apparatus further comprises: the processing unit is used for determining a detection result according to the electric signal provided by the ultrasonic receiver;
the ultrasonic generator is specifically configured to: sending an ultrasonic signal from the first wafer to the second wafer in the wafer bonding process;
the ultrasonic receiver is specifically configured to: and receiving ultrasonic signals penetrating through the first wafer and the second wafer, converting the ultrasonic signals into electric signals and sending the electric signals to the processing unit.
3. The processing apparatus according to claim 2, wherein the ultrasonic generator is disposed at a center position of the bearing surface of the first bearing table, wherein a surface of the ultrasonic generator and the bearing surface of the first bearing table are located on the same plane;
the ultrasonic receiver is arranged at the central position of the second bearing table, wherein the ultrasonic receiver and the bearing surface of the second bearing table are positioned on the same plane.
4. The processing apparatus as claimed in claim 2, wherein the carrying surface of the first carrying stage is oriented horizontally upward; the second bearing table is positioned above the first bearing table, and the bearing surface of the second bearing table faces downwards horizontally; the ultrasonic generator is vertically aligned with the ultrasonic receiver.
5. The processing apparatus according to claim 4, wherein the first carrier is provided with at least two ultrasonic generators, wherein the at least two ultrasonic generators are centered symmetrically with respect to the center of the first carrier;
at least two ultrasonic receivers are arranged on the second bearing table, wherein the at least two ultrasonic receivers are in central symmetry with the center of the second bearing table.
6. The processing apparatus according to any one of claims 1 to 5, wherein the carrying surfaces of the first carrying table and the second carrying table are respectively provided with an adsorption assembly;
the adsorption assembly is used for fixing the first wafer on the bearing surface of the first bearing table; and the second wafer is fixed on the bearing surface of the second bearing table.
7. The processing apparatus according to any of claims 1 to 5, wherein the second stage comprises: and the height adjusting assembly is used for adjusting the height of the second bearing table.
8. The processing apparatus according to any one of claims 1 to 5, wherein the apparatus further comprises:
and the alignment component is used for adjusting the position of the first wafer and/or the second wafer.
9. The processing apparatus of claim 8, wherein the alignment assembly comprises:
the alignment lens is used for determining the position offset of the first wafer and the second wafer by shooting alignment marks on the first wafer and the second wafer;
and the position adjusting component is used for adjusting the positions of the first wafer and/or the second wafer according to the position offset so as to align the alignment marks of the first wafer and the second wafer.
10. A wafer bonding apparatus, characterized in that the wafer bonding apparatus comprises the processing device of any one of the preceding claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921612884.0U CN211017007U (en) | 2019-09-24 | 2019-09-24 | Processing device for wafer bonding and wafer bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921612884.0U CN211017007U (en) | 2019-09-24 | 2019-09-24 | Processing device for wafer bonding and wafer bonding equipment |
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| Publication Number | Publication Date |
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| CN211017007U true CN211017007U (en) | 2020-07-14 |
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| CN201921612884.0U Active CN211017007U (en) | 2019-09-24 | 2019-09-24 | Processing device for wafer bonding and wafer bonding equipment |
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