CN113161279A - Device and method for preventing wafer from cracking - Google Patents
Device and method for preventing wafer from cracking Download PDFInfo
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- CN113161279A CN113161279A CN202110269673.7A CN202110269673A CN113161279A CN 113161279 A CN113161279 A CN 113161279A CN 202110269673 A CN202110269673 A CN 202110269673A CN 113161279 A CN113161279 A CN 113161279A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000005336 cracking Methods 0.000 title abstract description 5
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 5
- 239000012634 fragment Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 129
- 101100190528 Arabidopsis thaliana PIN6 gene Proteins 0.000 description 31
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000036541 health Effects 0.000 description 4
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- 241000220317 Rosa Species 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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Abstract
The invention relates to a device and a method for preventing wafer from cracking, wherein the device comprises: the high-temperature reaction cavity comprises a reaction cavity side wall; the reaction base is arranged at the center of the high-temperature reaction cavity, a wafer is arranged on the reaction base, a PIN lifting plate is arranged below the reaction base, the wafer lifting PIN is arranged, the lower end of the wafer lifting PIN is jacked and falls down by the movement of the PIN lifting plate, and the upper end of the wafer lifting PIN is abutted against the wafer; the first sensor is positioned above the PIN lifting plate and comprises a first emitter and a first receiver, the first emitter and the first receiver are oppositely arranged, and the lower end of the wafer lifting PIN is positioned between the first emitter and the first receiver; the photoelectric converter is connected with the first receiver and can acquire an optical signal of the first receiver; the number of the first sensors is the same as that of the wafer lifting PIN. The wafer lifting mechanism can adapt to a high-temperature environment, prevents the wafer from cracking in advance according to the state of wafer lifting PIN, reduces the fragment rate and improves the production benefit.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a device and a method for preventing a wafer from cracking.
Background
With the continuous improvement of the integrated circuit technology, the number of chips that can be produced per unit area is increasing, the size of the wafer is increasing, and with the increase of the size of the wafer, the wafer is easy to break in the semiconductor manufacturing process.
In the prior art, one method is to detect the breakage of the display substrate by using the signal change of the ultrasonic wave, both the transmitter and the receiver of the ultrasonic wave can rotate and tilt for detecting any position of the process area, the device can accurately detect the breakage of the display substrate, but the device cannot remedy the breakage, if the breakage of the wafer is detected by using the same method in the semiconductor process, the device cannot play any role in maintaining equipment, and if the breakage rate of the wafer is to be reduced in the semiconductor equipment, the best condition is to pre-judge the occurrence of the wafer breakage in advance; the other type is a wafer transmission device, the lifting and falling of the wafer are controlled by 3 lifting pins, a sensor device is arranged beside each lifting pin and used for detecting the parallel distance between the base and the lower surface of the wafer, if the distances detected by the 3 sensor devices are unequal, the equal distances are adjusted by a driving device below, so that the breakage caused by the inclination of the wafer can be avoided, the device can well pre-judge the wafer transmission risk and adjust the wafer transmission risk, but the device can only be carried out at normal temperature, and a plurality of processes in the semiconductor manufacturing process are carried out in a high-temperature reaction chamber.
Therefore, there is a need to develop a device and a method for preventing wafer breakage, which can adapt to high temperature environment, pre-determine wafer breakage in advance according to the wafer lifting PIN state, reduce wafer breakage rate, and improve production efficiency.
Disclosure of Invention
The present invention is directed to solving one of the technical problems of the prior art or the related art.
Therefore, the invention provides a device and a method for preventing wafer breakage.
In view of the above, one aspect of the present invention provides an apparatus for preventing wafer breakage, the apparatus comprising:
the high-temperature reaction cavity comprises a reaction cavity side wall;
the reaction base is arranged at the center of the high-temperature reaction cavity, a wafer is arranged on the reaction base, a PIN lifting plate is arranged below the reaction base, a wafer lifting PIN is arranged in the reaction base, the lower end of the wafer lifting PIN is jacked up and falls down by the movement of the PIN lifting plate, and the upper end of the wafer lifting PIN is abutted against the wafer;
a first sensor located above the PIN lift plate, the first sensor including a first emitter and a first receiver, the first emitter and the first receiver being disposed opposite to each other, a lower end of the wafer lift PIN being located between the first emitter and the first receiver;
the photoelectric converter is connected with the first receiver and can acquire an optical signal of the first receiver;
the number of the first sensors is the same as that of the wafer lifting PINs.
Further, the apparatus further comprises:
and the observation window is arranged on the side wall of the reaction cavity, and the position of the observation window corresponds to the position of the first sensor.
Further, the light transmittance of the observation window is 85% to 95%.
Further, the apparatus further comprises:
the second sensor is positioned between the first sensor and the reaction substrate and comprises a second emitter and a second receiver, the second emitter and the second receiver are oppositely arranged, and the second receiver is connected with the photoelectric converter.
Further, the second sensor is a photosensitive sensor.
Further, the first sensor is a photosensitive sensor.
Another aspect of the present invention provides a method for preventing wafer breakage, wherein the method for predicting includes:
transferring the wafer into a high-temperature reaction chamber;
detecting the state of a wafer lifting PIN through a first transmitter and a first receiver;
and predicting the state of the wafer according to the state of the wafer lifting PIN.
Further, the detecting the state of the wafer lift PIN by the first transmitter and the first receiver includes:
when the wafer lifting PIN is in a normal state, the light of the first emitter and the first receiver is cut off, so that the first receiver cannot receive optical signals;
when the wafer lifting PIN is broken, the first receiver receives an optical signal of the first transmitter.
Further, the first receiver is connected with the photoelectric converter, when the wafer lifting PIN is in a normal state, the photoelectric converter outputs '1', and when the wafer lifting PIN is broken, the photoelectric converter outputs '0'.
Further, predicting the state of the wafer according to the state of the wafer lifting PIN comprises: if the wafer lifting PIN is detected to be broken, stopping conveying the wafer to the reaction chamber; if the wafer lifting PIN is detected to be intact, the wafer is normally transferred to the reaction chamber.
The technical scheme provided by the embodiment of the invention can have the following beneficial effects:
according to the output signals of the first emitter and the first receiver in the photoelectric converter, whether the wafer lifting PIN is broken or not is judged, further, whether the wafer is continuously transmitted into or transmitted out or stopped being transmitted into or transmitted out is predicted, cooling measures are timely taken to maintain equipment and replace the wafer lifting PIN, meanwhile, the reason that the PIN is broken is checked to prevent the wafer lifting PIN from breaking, the wafer lifting PIN can adapt to a high-temperature environment, breakage of the wafer is prevented in advance according to the state of the wafer lifting PIN, the wafer breakage rate is reduced, and production benefits are improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 illustrates a top view of an apparatus for preventing wafer breakage according to one embodiment of the present invention;
FIG. 2 illustrates a schematic position diagram of one of the wafer lift PINs according to one embodiment of the present invention;
FIG. 3a shows a schematic diagram of wafer lift PIN health in accordance with one embodiment of the present invention;
FIG. 3b shows a schematic diagram of a wafer lift PIN breakage state according to one embodiment of the present invention;
FIG. 4a shows a schematic diagram of wafer lift PIN health in accordance with another embodiment of the present invention;
FIG. 4b shows a schematic diagram of a wafer lift PIN breakage state according to another embodiment of the present invention;
fig. 5 is a flowchart illustrating steps of a method for preventing wafer breakage according to an embodiment of the present invention.
Wherein, the correspondence between the reference numbers and the part names in fig. 1 to 4b is:
1 high temperature reaction chamber, 2 reaction chamber lateral walls, 3 reaction base, 4 wafers, 5PIN lifter plate, 6 wafer lift PIN, 7 first transmitter, 8 first receiver, 9 photoelectric converter, 10 second transmitter, 11 second receiver, 12 observation windows.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Example 1
In this embodiment, the reaction base is in a fixed state, for example, one wafer lift PIN is detected, and the monitoring principle of the wafer lift PINs is the same.
FIG. 1 illustrates a top view of an apparatus for preventing wafer breakage according to one embodiment of the present invention; FIG. 2 illustrates a schematic position diagram of one of the wafer lift PINs according to one embodiment of the present invention; FIG. 3a shows a schematic diagram of wafer lift PIN health in accordance with one embodiment of the present invention; figure 3b shows a schematic diagram of a wafer lift PIN break state according to one embodiment of the present invention.
As shown in fig. 1 to 3b, the present embodiment provides an apparatus for preventing wafer breakage, the apparatus including:
the high-temperature reaction chamber 1 comprises a reaction chamber side wall 2;
the reaction base 3 is arranged at the center of the high-temperature reaction cavity 1, a wafer 4 is arranged on the reaction base 3, a PIN lifting plate 5 is arranged below the reaction base 3, a wafer lifting PIN6 is arranged in the reaction base 3, the lower end of a wafer lifting PIN6 is jacked up and falls down by the movement of the PIN lifting plate 5, and the upper end of a wafer lifting PIN6 props against the wafer 4;
a first sensor located above the PIN lifting plate 5, the first sensor comprising a first emitter 7 and a first receiver 8, the first emitter 7 and the first receiver 8 being disposed opposite to each other, the lower end of the wafer lifting PIN6 being located between the first emitter 7 and the first receiver 8;
a photoelectric converter 9 connected to the first receiver 8, the photoelectric converter 9 being capable of acquiring an optical signal of the first receiver 8;
the number of the first sensors is the same as that of the wafer lifting PINs 6.
Specifically, before the wafer 4 is transferred into the high-temperature reaction chamber 1, the first emitter 7 emits light to be aligned with the bottom of the wafer lifting PIN6, when the wafer lifting PIN6 is intact, the first receiver 8 cannot receive the light signal, the photoelectric converter 9 outputs "1", the wafer 4 is normally transferred in and out, when the wafer lifting PIN6 is broken, the first receiver 8 can receive the light signal, the photoelectric converter 9 outputs "0", and the wafer 4 stops transferring in and out.
According to the output signals of the first emitter 7 and the first receiver 8 in the photoelectric converter 9, whether the wafer lifting PIN6 is broken or not is judged, further, whether the wafer 4 is continuously transferred into or transferred out or is stopped to be transferred into or transferred out is predicted, cooling measures are timely taken to maintain equipment and replace the wafer lifting PIN, meanwhile, the reason of PIN breakage is checked to prevent, the wafer lifting PIN is adaptive to a high-temperature environment, breakage of the wafer 4 is prevented in advance according to the state of the wafer lifting PIN6, the breakage rate is reduced, and the production benefit is improved.
Further, the apparatus further comprises:
and the observation window 12 is arranged on the side wall 2 of the reaction cavity, and the position of the observation window 12 corresponds to the position of the first sensor.
Wherein, the light transmittance of the observation window 12 is 85% to 95%.
The setting of observation window 12 can be convenient for observe the condition of wafer lift PIN6 in the high temperature reaction chamber 1, and high temperature reaction chamber 1 is the block material, and the luminousness is very poor, and transparent observation window 12 can also let the light see through, the work of the first transmitter 7 and the first receiver 8 of being more convenient for.
Further, the first sensor is a photosensitive sensor.
The scheme mainly utilizes the opposite irradiation of light, so the type of the used sensor is a photosensitive sensor, the photosensitive sensor has the advantages of simple structure, long detection distance, less limitation on a detected object, short response time and high resolution ratio, and can realize non-contact detection.
It should be noted that when the reaction susceptor 3 moves upward, a lifting tray may be disposed below the first emitter 7 and the first receiver 8, so that the first emitter 7 and the first receiver 8 move along with the lifting of the wafer lifting PIN6, and the light emitted from the first emitter 7 can be ensured to be emitted to the bottom of the wafer lifting PIN6, wherein the high temperature reaction chamber 1 of the embodiment has a hexahedral shape, which facilitates the arrangement of the observation window.
Example 2
FIG. 4a shows a schematic diagram of wafer lift PIN health in accordance with another embodiment of the present invention; figure 4b shows a schematic diagram of a wafer lift PIN break state according to another embodiment of the present invention.
As shown in fig. 4a and 4b, on the basis of embodiment 1, the apparatus of this embodiment further includes:
and the second sensor is positioned between the first sensor and the reaction substrate 3, and comprises a second emitter 10 and a second receiver 11, the second emitter 10 and the second receiver 11 are oppositely arranged, and the second receiver 11 is connected with the photoelectric converter 9.
Wherein the second sensor is a photosensitive sensor.
When the reaction base can reciprocate, can set up two sensors, second transmitter 10 sets up in the top of first transmitter 7, and second receiver 11 sets up in the top of first receiver 8, and when being convenient for wafer lift PIN6 rose, the bottom of wafer lift PIN6 can be aimed at to the light of the second transmitter transmission 10 of second sensor, guarantees also can monitor its fracture condition when wafer lift PIN6 rose, improves the reliability of device.
Example 3
Fig. 5 is a flowchart illustrating steps of a method for preventing wafer breakage according to an embodiment of the present invention.
As shown in fig. 5, the present embodiment provides a method for preventing wafer breakage, using the apparatus for preventing wafer breakage of embodiment 1, the method includes:
and 3, predicting the state of the wafer according to the state of the wafer lifting PIN.
Further, detecting the state of the wafer lift PIN6 by the first emitter 7 and the first receiver 8 includes:
when the wafer lifting PIN6 is in a normal state, the light of the first emitter 7 and the first receiver 8 is cut off, so that the first receiver 8 cannot receive the optical signal;
when the wafer lift PIN6 breaks, the first receiver 8 receives the optical signal from the first transmitter 7.
The first receiver 8 is connected to the photoelectric converter 9, and when the wafer lift PIN6 is in a normal state, the photoelectric converter 9 outputs "1", and when the wafer lift PIN6 is broken, the photoelectric converter 9 outputs "0".
Specifically, before the wafer 4 is transferred into the high-temperature reaction chamber 1, the first emitter 7 emits light to be aligned with the bottom of the wafer lifting PIN6, when the wafer lifting PIN6 is intact, the first receiver 8 cannot receive the light signal, the photoelectric converter 9 outputs "1", the wafer 4 is normally transferred in and out, when the wafer lifting PIN6 is broken, the first receiver 8 can receive the light signal, the photoelectric converter 9 outputs "0", and the wafer 4 stops transferring in and out.
Further, predicting the state of the wafer 4 based on the state of the wafer lift PIN6 includes: stopping transferring the wafer 4 to the reaction chamber if the wafer lift PIN6 is detected to be broken; if wafer lift PIN6 is detected to be intact, transfer of wafer 4 to the reaction chamber is performed normally.
According to the output signals of the first emitter 7 and the first receiver 8 in the photoelectric converter 9, whether the wafer lifting PIN6 is broken is judged, whether the wafer 4 is continuously transferred or is stopped to be transferred or not is predicted, temperature reduction measures are timely taken to maintain the equipment and replace the new wafer lifting PIN6, the high-temperature environment can be adapted, according to the state of the wafer lifting PIN6, breakage of the wafer 4 is prevented in advance, the breakage rate is reduced, production benefits are improved, if breakage of the wafer lifting PIN6 is not detected in advance, wafer 4 is normally transferred, the wafer 4 is transferred to a reaction base, the wafer 4 is inclined, the risk of breakage exists in the transfer process, breakage of the wafer 4 caused by breakage of the wafer lifting PIN6 can be avoided, and cost is reduced for equipment maintenance.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It is to be understood that the present invention is not limited to what has been described above, and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (10)
1. An apparatus for preventing wafer breakage, the apparatus comprising:
the high-temperature reaction cavity comprises a reaction cavity side wall;
the reaction base is arranged at the center of the high-temperature reaction cavity, a wafer is arranged on the reaction base, a PIN lifting plate is arranged below the reaction base, a wafer lifting PIN is arranged in the reaction base, the lower end of the wafer lifting PIN is jacked up and falls down by the movement of the PIN lifting plate, and the upper end of the wafer lifting PIN is abutted against the wafer;
a first sensor located above the PIN lift plate, the first sensor including a first emitter and a first receiver, the first emitter and the first receiver being disposed opposite to each other, a lower end of the wafer lift PIN being located between the first emitter and the first receiver;
the photoelectric converter is connected with the first receiver and can acquire an optical signal of the first receiver;
the number of the first sensors is the same as that of the wafer lifting PINs.
2. The apparatus for preventing wafer breakage as set forth in claim 1, further comprising:
and the observation window is arranged on the side wall of the reaction cavity, and the position of the observation window corresponds to the position of the first sensor.
3. The apparatus for preventing wafer breakage as set forth in claim 2, wherein the light transmittance of the observation window is 85% to 95%.
4. The apparatus for preventing wafer breakage as set forth in claim 1, further comprising:
the second sensor is positioned between the first sensor and the reaction substrate and comprises a second emitter and a second receiver, the second emitter and the second receiver are oppositely arranged, and the second receiver is connected with the photoelectric converter.
5. The apparatus for preventing wafer breakage as set forth in claim 4, wherein the second sensor is a photosensitive sensor.
6. The device for preventing wafer breakage as set forth in any one of claims 1 to 5, wherein the first sensor is a photosensitive sensor.
7. A method for preventing wafer breakage, using the apparatus for preventing wafer breakage according to any one of claims 1 to 5, wherein the prediction method comprises:
transferring the wafer into a high-temperature reaction chamber;
detecting the state of a wafer lifting PIN through a first transmitter and a first receiver;
and predicting the state of the wafer according to the state of the wafer lifting PIN.
8. The method as claimed in claim 7, wherein the detecting the status of the wafer lift PIN by the first transmitter and the first receiver comprises:
when the wafer lifting PIN is in a normal state, the light of the first emitter and the first receiver is cut off, so that the first receiver cannot receive optical signals;
when the wafer lifting PIN is broken, the first receiver receives an optical signal of the first transmitter.
9. The method as claimed in claim 8, wherein the first receiver is connected to a photoelectric converter, and the photoelectric converter outputs "1" when the wafer lift PIN is in a normal state and "0" when the wafer lift PIN is broken.
10. The method as claimed in claim 9, wherein predicting the wafer state based on the wafer lift PIN state comprises: if the wafer lifting PIN is detected to be broken, stopping conveying the wafer to the reaction chamber; if the wafer lifting PIN is detected to be intact, the wafer is normally transferred to the reaction chamber.
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Cited By (1)
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CN115579312A (en) * | 2022-12-09 | 2023-01-06 | 合肥新晶集成电路有限公司 | Wafer detection method, device, equipment, storage medium and computer program product |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN115579312A (en) * | 2022-12-09 | 2023-01-06 | 合肥新晶集成电路有限公司 | Wafer detection method, device, equipment, storage medium and computer program product |
CN115579312B (en) * | 2022-12-09 | 2023-04-18 | 合肥新晶集成电路有限公司 | Wafer detection method, device, equipment, storage medium and computer program product |
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