CN113161279A - Device and method for preventing wafer from cracking - Google Patents
Device and method for preventing wafer from cracking Download PDFInfo
- Publication number
- CN113161279A CN113161279A CN202110269673.7A CN202110269673A CN113161279A CN 113161279 A CN113161279 A CN 113161279A CN 202110269673 A CN202110269673 A CN 202110269673A CN 113161279 A CN113161279 A CN 113161279A
- Authority
- CN
- China
- Prior art keywords
- wafer
- receiver
- pin
- breakage
- lifting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000005336 cracking Methods 0.000 title description 3
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 129
- 101100190528 Arabidopsis thaliana PIN6 gene Proteins 0.000 description 31
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000036541 health Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 241000220317 Rosa Species 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明是关于一种预防圆晶破裂的装置和预防方法，其中，装置包括：高温反应腔，包括反应腔侧壁；反应基座，设置于高温反应腔的中心处，反应基座上设有晶圆，反应基座下方设有PIN升降板，设置晶圆升降PIN，其下端由PIN升降板运动顶起与下落，其上端抵住晶圆；第一传感器，位于PIN升降板上方，第一传感器包括第一发射器和第一接收器，第一发射器和第一接收器相对设置，晶圆升降PIN的下端位于第一发射器和第一接收器之间；光电转换器，与第一接收器连接，光电转换器能够获取第一接收器的光信号；其中，第一传感器的个数与晶圆升降PIN的个数相同。能够适应高温环境，根据晶圆升降PIN的状态，提前预防晶圆的破裂，降低破片率，提高生产效益。
The present invention relates to a device and method for preventing wafer breakage, wherein the device comprises: a high temperature reaction chamber, including a side wall of the reaction chamber; a reaction base, arranged at the center of the high temperature reaction chamber, and the reaction base is provided with For the wafer, there is a PIN lifting plate under the reaction base, and the wafer lifting PIN is set. The lower end is lifted and dropped by the PIN lifting plate, and the upper end is against the wafer; The sensor includes a first transmitter and a first receiver, the first transmitter and the first receiver are arranged oppositely, and the lower end of the wafer lift PIN is located between the first transmitter and the first receiver; the photoelectric converter is connected to the first receiver. The receiver is connected, and the photoelectric converter can obtain the optical signal of the first receiver; wherein, the number of the first sensors is the same as the number of the wafer lifting PINs. It can adapt to high temperature environment, according to the state of wafer lifting PIN, prevent wafer breakage in advance, reduce the breakage rate, and improve production efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a device and a method for preventing a wafer from cracking.
Background
With the continuous improvement of the integrated circuit technology, the number of chips that can be produced per unit area is increasing, the size of the wafer is increasing, and with the increase of the size of the wafer, the wafer is easy to break in the semiconductor manufacturing process.
In the prior art, one method is to detect the breakage of the display substrate by using the signal change of the ultrasonic wave, both the transmitter and the receiver of the ultrasonic wave can rotate and tilt for detecting any position of the process area, the device can accurately detect the breakage of the display substrate, but the device cannot remedy the breakage, if the breakage of the wafer is detected by using the same method in the semiconductor process, the device cannot play any role in maintaining equipment, and if the breakage rate of the wafer is to be reduced in the semiconductor equipment, the best condition is to pre-judge the occurrence of the wafer breakage in advance; the other type is a wafer transmission device, the lifting and falling of the wafer are controlled by 3 lifting pins, a sensor device is arranged beside each lifting pin and used for detecting the parallel distance between the base and the lower surface of the wafer, if the distances detected by the 3 sensor devices are unequal, the equal distances are adjusted by a driving device below, so that the breakage caused by the inclination of the wafer can be avoided, the device can well pre-judge the wafer transmission risk and adjust the wafer transmission risk, but the device can only be carried out at normal temperature, and a plurality of processes in the semiconductor manufacturing process are carried out in a high-temperature reaction chamber.
Therefore, there is a need to develop a device and a method for preventing wafer breakage, which can adapt to high temperature environment, pre-determine wafer breakage in advance according to the wafer lifting PIN state, reduce wafer breakage rate, and improve production efficiency.
Disclosure of Invention
The present invention is directed to solving one of the technical problems of the prior art or the related art.
Therefore, the invention provides a device and a method for preventing wafer breakage.
In view of the above, one aspect of the present invention provides an apparatus for preventing wafer breakage, the apparatus comprising:
the high-temperature reaction cavity comprises a reaction cavity side wall;
the reaction base is arranged at the center of the high-temperature reaction cavity, a wafer is arranged on the reaction base, a PIN lifting plate is arranged below the reaction base, a wafer lifting PIN is arranged in the reaction base, the lower end of the wafer lifting PIN is jacked up and falls down by the movement of the PIN lifting plate, and the upper end of the wafer lifting PIN is abutted against the wafer;
a first sensor located above the PIN lift plate, the first sensor including a first emitter and a first receiver, the first emitter and the first receiver being disposed opposite to each other, a lower end of the wafer lift PIN being located between the first emitter and the first receiver;
the photoelectric converter is connected with the first receiver and can acquire an optical signal of the first receiver;
the number of the first sensors is the same as that of the wafer lifting PINs.
Further, the apparatus further comprises:
and the observation window is arranged on the side wall of the reaction cavity, and the position of the observation window corresponds to the position of the first sensor.
Further, the light transmittance of the observation window is 85% to 95%.
Further, the apparatus further comprises:
the second sensor is positioned between the first sensor and the reaction substrate and comprises a second emitter and a second receiver, the second emitter and the second receiver are oppositely arranged, and the second receiver is connected with the photoelectric converter.
Further, the second sensor is a photosensitive sensor.
Further, the first sensor is a photosensitive sensor.
Another aspect of the present invention provides a method for preventing wafer breakage, wherein the method for predicting includes:
transferring the wafer into a high-temperature reaction chamber;
detecting the state of a wafer lifting PIN through a first transmitter and a first receiver;
and predicting the state of the wafer according to the state of the wafer lifting PIN.
Further, the detecting the state of the wafer lift PIN by the first transmitter and the first receiver includes:
when the wafer lifting PIN is in a normal state, the light of the first emitter and the first receiver is cut off, so that the first receiver cannot receive optical signals;
when the wafer lifting PIN is broken, the first receiver receives an optical signal of the first transmitter.
Further, the first receiver is connected with the photoelectric converter, when the wafer lifting PIN is in a normal state, the photoelectric converter outputs '1', and when the wafer lifting PIN is broken, the photoelectric converter outputs '0'.
Further, predicting the state of the wafer according to the state of the wafer lifting PIN comprises: if the wafer lifting PIN is detected to be broken, stopping conveying the wafer to the reaction chamber; if the wafer lifting PIN is detected to be intact, the wafer is normally transferred to the reaction chamber.
The technical scheme provided by the embodiment of the invention can have the following beneficial effects:
according to the output signals of the first emitter and the first receiver in the photoelectric converter, whether the wafer lifting PIN is broken or not is judged, further, whether the wafer is continuously transmitted into or transmitted out or stopped being transmitted into or transmitted out is predicted, cooling measures are timely taken to maintain equipment and replace the wafer lifting PIN, meanwhile, the reason that the PIN is broken is checked to prevent the wafer lifting PIN from breaking, the wafer lifting PIN can adapt to a high-temperature environment, breakage of the wafer is prevented in advance according to the state of the wafer lifting PIN, the wafer breakage rate is reduced, and production benefits are improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments or technical solutions in the prior art of the present invention, the drawings used in the description of the embodiments or prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 illustrates a top view of an apparatus for preventing wafer breakage according to one embodiment of the present invention;
FIG. 2 illustrates a schematic position diagram of one of the wafer lift PINs according to one embodiment of the present invention;
FIG. 3a shows a schematic diagram of wafer lift PIN health in accordance with one embodiment of the present invention;
FIG. 3b shows a schematic diagram of a wafer lift PIN breakage state according to one embodiment of the present invention;
FIG. 4a shows a schematic diagram of wafer lift PIN health in accordance with another embodiment of the present invention;
FIG. 4b shows a schematic diagram of a wafer lift PIN breakage state according to another embodiment of the present invention;
fig. 5 is a flowchart illustrating steps of a method for preventing wafer breakage according to an embodiment of the present invention.
Wherein, the correspondence between the reference numbers and the part names in fig. 1 to 4b is:
1 high temperature reaction chamber, 2 reaction chamber lateral walls, 3 reaction base, 4 wafers, 5PIN lifter plate, 6 wafer lift PIN, 7 first transmitter, 8 first receiver, 9 photoelectric converter, 10 second transmitter, 11 second receiver, 12 observation windows.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Example 1
In this embodiment, the reaction base is in a fixed state, for example, one wafer lift PIN is detected, and the monitoring principle of the wafer lift PINs is the same.
FIG. 1 illustrates a top view of an apparatus for preventing wafer breakage according to one embodiment of the present invention; FIG. 2 illustrates a schematic position diagram of one of the wafer lift PINs according to one embodiment of the present invention; FIG. 3a shows a schematic diagram of wafer lift PIN health in accordance with one embodiment of the present invention; figure 3b shows a schematic diagram of a wafer lift PIN break state according to one embodiment of the present invention.
As shown in fig. 1 to 3b, the present embodiment provides an apparatus for preventing wafer breakage, the apparatus including:
the high-temperature reaction chamber 1 comprises a reaction chamber side wall 2;
the reaction base 3 is arranged at the center of the high-temperature reaction cavity 1, a wafer 4 is arranged on the reaction base 3, a PIN lifting plate 5 is arranged below the reaction base 3, a wafer lifting PIN6 is arranged in the reaction base 3, the lower end of a wafer lifting PIN6 is jacked up and falls down by the movement of the PIN lifting plate 5, and the upper end of a wafer lifting PIN6 props against the wafer 4;
a first sensor located above the PIN lifting plate 5, the first sensor comprising a first emitter 7 and a first receiver 8, the first emitter 7 and the first receiver 8 being disposed opposite to each other, the lower end of the wafer lifting PIN6 being located between the first emitter 7 and the first receiver 8;
a photoelectric converter 9 connected to the first receiver 8, the photoelectric converter 9 being capable of acquiring an optical signal of the first receiver 8;
the number of the first sensors is the same as that of the wafer lifting PINs 6.
Specifically, before the wafer 4 is transferred into the high-temperature reaction chamber 1, the first emitter 7 emits light to be aligned with the bottom of the wafer lifting PIN6, when the wafer lifting PIN6 is intact, the first receiver 8 cannot receive the light signal, the photoelectric converter 9 outputs "1", the wafer 4 is normally transferred in and out, when the wafer lifting PIN6 is broken, the first receiver 8 can receive the light signal, the photoelectric converter 9 outputs "0", and the wafer 4 stops transferring in and out.
According to the output signals of the first emitter 7 and the first receiver 8 in the photoelectric converter 9, whether the wafer lifting PIN6 is broken or not is judged, further, whether the wafer 4 is continuously transferred into or transferred out or is stopped to be transferred into or transferred out is predicted, cooling measures are timely taken to maintain equipment and replace the wafer lifting PIN, meanwhile, the reason of PIN breakage is checked to prevent, the wafer lifting PIN is adaptive to a high-temperature environment, breakage of the wafer 4 is prevented in advance according to the state of the wafer lifting PIN6, the breakage rate is reduced, and the production benefit is improved.
Further, the apparatus further comprises:
and the observation window 12 is arranged on the side wall 2 of the reaction cavity, and the position of the observation window 12 corresponds to the position of the first sensor.
Wherein, the light transmittance of the observation window 12 is 85% to 95%.
The setting of observation window 12 can be convenient for observe the condition of wafer lift PIN6 in the high temperature reaction chamber 1, and high temperature reaction chamber 1 is the block material, and the luminousness is very poor, and transparent observation window 12 can also let the light see through, the work of the first transmitter 7 and the first receiver 8 of being more convenient for.
Further, the first sensor is a photosensitive sensor.
The scheme mainly utilizes the opposite irradiation of light, so the type of the used sensor is a photosensitive sensor, the photosensitive sensor has the advantages of simple structure, long detection distance, less limitation on a detected object, short response time and high resolution ratio, and can realize non-contact detection.
It should be noted that when the reaction susceptor 3 moves upward, a lifting tray may be disposed below the first emitter 7 and the first receiver 8, so that the first emitter 7 and the first receiver 8 move along with the lifting of the wafer lifting PIN6, and the light emitted from the first emitter 7 can be ensured to be emitted to the bottom of the wafer lifting PIN6, wherein the high temperature reaction chamber 1 of the embodiment has a hexahedral shape, which facilitates the arrangement of the observation window.
Example 2
FIG. 4a shows a schematic diagram of wafer lift PIN health in accordance with another embodiment of the present invention; figure 4b shows a schematic diagram of a wafer lift PIN break state according to another embodiment of the present invention.
As shown in fig. 4a and 4b, on the basis of embodiment 1, the apparatus of this embodiment further includes:
and the second sensor is positioned between the first sensor and the reaction substrate 3, and comprises a second emitter 10 and a second receiver 11, the second emitter 10 and the second receiver 11 are oppositely arranged, and the second receiver 11 is connected with the photoelectric converter 9.
Wherein the second sensor is a photosensitive sensor.
When the reaction base can reciprocate, can set up two sensors, second transmitter 10 sets up in the top of first transmitter 7, and second receiver 11 sets up in the top of first receiver 8, and when being convenient for wafer lift PIN6 rose, the bottom of wafer lift PIN6 can be aimed at to the light of the second transmitter transmission 10 of second sensor, guarantees also can monitor its fracture condition when wafer lift PIN6 rose, improves the reliability of device.
Example 3
Fig. 5 is a flowchart illustrating steps of a method for preventing wafer breakage according to an embodiment of the present invention.
As shown in fig. 5, the present embodiment provides a method for preventing wafer breakage, using the apparatus for preventing wafer breakage of embodiment 1, the method includes:
and 3, predicting the state of the wafer according to the state of the wafer lifting PIN.
Further, detecting the state of the wafer lift PIN6 by the first emitter 7 and the first receiver 8 includes:
when the wafer lifting PIN6 is in a normal state, the light of the first emitter 7 and the first receiver 8 is cut off, so that the first receiver 8 cannot receive the optical signal;
when the wafer lift PIN6 breaks, the first receiver 8 receives the optical signal from the first transmitter 7.
The first receiver 8 is connected to the photoelectric converter 9, and when the wafer lift PIN6 is in a normal state, the photoelectric converter 9 outputs "1", and when the wafer lift PIN6 is broken, the photoelectric converter 9 outputs "0".
Specifically, before the wafer 4 is transferred into the high-temperature reaction chamber 1, the first emitter 7 emits light to be aligned with the bottom of the wafer lifting PIN6, when the wafer lifting PIN6 is intact, the first receiver 8 cannot receive the light signal, the photoelectric converter 9 outputs "1", the wafer 4 is normally transferred in and out, when the wafer lifting PIN6 is broken, the first receiver 8 can receive the light signal, the photoelectric converter 9 outputs "0", and the wafer 4 stops transferring in and out.
Further, predicting the state of the wafer 4 based on the state of the wafer lift PIN6 includes: stopping transferring the wafer 4 to the reaction chamber if the wafer lift PIN6 is detected to be broken; if wafer lift PIN6 is detected to be intact, transfer of wafer 4 to the reaction chamber is performed normally.
According to the output signals of the first emitter 7 and the first receiver 8 in the photoelectric converter 9, whether the wafer lifting PIN6 is broken is judged, whether the wafer 4 is continuously transferred or is stopped to be transferred or not is predicted, temperature reduction measures are timely taken to maintain the equipment and replace the new wafer lifting PIN6, the high-temperature environment can be adapted, according to the state of the wafer lifting PIN6, breakage of the wafer 4 is prevented in advance, the breakage rate is reduced, production benefits are improved, if breakage of the wafer lifting PIN6 is not detected in advance, wafer 4 is normally transferred, the wafer 4 is transferred to a reaction base, the wafer 4 is inclined, the risk of breakage exists in the transfer process, breakage of the wafer 4 caused by breakage of the wafer lifting PIN6 can be avoided, and cost is reduced for equipment maintenance.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It is to be understood that the present invention is not limited to what has been described above, and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (10)
1. An apparatus for preventing wafer breakage, the apparatus comprising:
the high-temperature reaction cavity comprises a reaction cavity side wall;
the reaction base is arranged at the center of the high-temperature reaction cavity, a wafer is arranged on the reaction base, a PIN lifting plate is arranged below the reaction base, a wafer lifting PIN is arranged in the reaction base, the lower end of the wafer lifting PIN is jacked up and falls down by the movement of the PIN lifting plate, and the upper end of the wafer lifting PIN is abutted against the wafer;
a first sensor located above the PIN lift plate, the first sensor including a first emitter and a first receiver, the first emitter and the first receiver being disposed opposite to each other, a lower end of the wafer lift PIN being located between the first emitter and the first receiver;
the photoelectric converter is connected with the first receiver and can acquire an optical signal of the first receiver;
the number of the first sensors is the same as that of the wafer lifting PINs.
2. The apparatus for preventing wafer breakage as set forth in claim 1, further comprising:
and the observation window is arranged on the side wall of the reaction cavity, and the position of the observation window corresponds to the position of the first sensor.
3. The apparatus for preventing wafer breakage as set forth in claim 2, wherein the light transmittance of the observation window is 85% to 95%.
4. The apparatus for preventing wafer breakage as set forth in claim 1, further comprising:
the second sensor is positioned between the first sensor and the reaction substrate and comprises a second emitter and a second receiver, the second emitter and the second receiver are oppositely arranged, and the second receiver is connected with the photoelectric converter.
5. The apparatus for preventing wafer breakage as set forth in claim 4, wherein the second sensor is a photosensitive sensor.
6. The device for preventing wafer breakage as set forth in any one of claims 1 to 5, wherein the first sensor is a photosensitive sensor.
7. A method for preventing wafer breakage, using the apparatus for preventing wafer breakage according to any one of claims 1 to 5, wherein the prediction method comprises:
transferring the wafer into a high-temperature reaction chamber;
detecting the state of a wafer lifting PIN through a first transmitter and a first receiver;
and predicting the state of the wafer according to the state of the wafer lifting PIN.
8. The method as claimed in claim 7, wherein the detecting the status of the wafer lift PIN by the first transmitter and the first receiver comprises:
when the wafer lifting PIN is in a normal state, the light of the first emitter and the first receiver is cut off, so that the first receiver cannot receive optical signals;
when the wafer lifting PIN is broken, the first receiver receives an optical signal of the first transmitter.
9. The method as claimed in claim 8, wherein the first receiver is connected to a photoelectric converter, and the photoelectric converter outputs "1" when the wafer lift PIN is in a normal state and "0" when the wafer lift PIN is broken.
10. The method as claimed in claim 9, wherein predicting the wafer state based on the wafer lift PIN state comprises: if the wafer lifting PIN is detected to be broken, stopping conveying the wafer to the reaction chamber; if the wafer lifting PIN is detected to be intact, the wafer is normally transferred to the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110269673.7A CN113161279B (en) | 2021-03-12 | 2021-03-12 | Apparatus and method for preventing wafer breakage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110269673.7A CN113161279B (en) | 2021-03-12 | 2021-03-12 | Apparatus and method for preventing wafer breakage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113161279A true CN113161279A (en) | 2021-07-23 |
| CN113161279B CN113161279B (en) | 2024-10-29 |
Family
ID=76887023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110269673.7A Active CN113161279B (en) | 2021-03-12 | 2021-03-12 | Apparatus and method for preventing wafer breakage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113161279B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115479708A (en) * | 2022-09-29 | 2022-12-16 | 拓荆科技股份有限公司 | Adsorption force detection device, method, storage medium, and semiconductor processing device |
| CN115579312A (en) * | 2022-12-09 | 2023-01-06 | 合肥新晶集成电路有限公司 | Wafer detection method, device, equipment, storage medium and computer program product |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020006270A (en) * | 2000-07-12 | 2002-01-19 | 윤종용 | Lift pin broken preventing apparatus of wafer handling system in semiconductor fabrication equipment |
| KR20060125072A (en) * | 2005-06-01 | 2006-12-06 | 삼성전자주식회사 | Semiconductor device manufacturing equipment |
| KR20070098025A (en) * | 2006-03-30 | 2007-10-05 | 삼성전자주식회사 | Semiconductor device manufacturing equipment |
| KR20090086785A (en) * | 2008-02-11 | 2009-08-14 | (주)소슬 | Substrate Processing Unit and Substrate Processing System |
| US20100013626A1 (en) * | 2008-07-15 | 2010-01-21 | Applied Materials, Inc. | Substrate lift pin sensor |
| US20120070996A1 (en) * | 2010-09-17 | 2012-03-22 | Lam Research Corporation | Polar regions for electrostatic de-chucking with lift pins |
| CN103839852A (en) * | 2012-11-20 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Wafer detection device and method used for ashing machine |
| CN206706205U (en) * | 2017-03-15 | 2017-12-05 | 中芯国际集成电路制造（天津）有限公司 | A kind of elevating mechanism and chemical vapor deposition unit |
| CN109003921A (en) * | 2018-08-01 | 2018-12-14 | 德淮半导体有限公司 | Process equipment and its working method |
| CN208954942U (en) * | 2018-09-04 | 2019-06-07 | 德淮半导体有限公司 | Wafer conveying device |
| CN111613550A (en) * | 2019-02-26 | 2020-09-01 | 东京毅力科创株式会社 | Load lock module, substrate processing apparatus, and substrate transfer method |
| CN112233992A (en) * | 2020-09-10 | 2021-01-15 | 上海华力集成电路制造有限公司 | Wafer fragment detection device and use method thereof |
-
2021
- 2021-03-12 CN CN202110269673.7A patent/CN113161279B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020006270A (en) * | 2000-07-12 | 2002-01-19 | 윤종용 | Lift pin broken preventing apparatus of wafer handling system in semiconductor fabrication equipment |
| KR20060125072A (en) * | 2005-06-01 | 2006-12-06 | 삼성전자주식회사 | Semiconductor device manufacturing equipment |
| KR20070098025A (en) * | 2006-03-30 | 2007-10-05 | 삼성전자주식회사 | Semiconductor device manufacturing equipment |
| KR20090086785A (en) * | 2008-02-11 | 2009-08-14 | (주)소슬 | Substrate Processing Unit and Substrate Processing System |
| US20100013626A1 (en) * | 2008-07-15 | 2010-01-21 | Applied Materials, Inc. | Substrate lift pin sensor |
| US20120070996A1 (en) * | 2010-09-17 | 2012-03-22 | Lam Research Corporation | Polar regions for electrostatic de-chucking with lift pins |
| CN103839852A (en) * | 2012-11-20 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Wafer detection device and method used for ashing machine |
| CN206706205U (en) * | 2017-03-15 | 2017-12-05 | 中芯国际集成电路制造（天津）有限公司 | A kind of elevating mechanism and chemical vapor deposition unit |
| CN109003921A (en) * | 2018-08-01 | 2018-12-14 | 德淮半导体有限公司 | Process equipment and its working method |
| CN208954942U (en) * | 2018-09-04 | 2019-06-07 | 德淮半导体有限公司 | Wafer conveying device |
| CN111613550A (en) * | 2019-02-26 | 2020-09-01 | 东京毅力科创株式会社 | Load lock module, substrate processing apparatus, and substrate transfer method |
| CN112233992A (en) * | 2020-09-10 | 2021-01-15 | 上海华力集成电路制造有限公司 | Wafer fragment detection device and use method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 徐丽明: "《生物生产系统机器人》", 31 March 2009, 中国农业大学出版社, pages: 36 - 37 * |
| 李惠军: "《现代集成电路制造工艺原理》", 28 February 2007, 山东大学出版社, pages: 149 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115479708A (en) * | 2022-09-29 | 2022-12-16 | 拓荆科技股份有限公司 | Adsorption force detection device, method, storage medium, and semiconductor processing device |
| CN115579312A (en) * | 2022-12-09 | 2023-01-06 | 合肥新晶集成电路有限公司 | Wafer detection method, device, equipment, storage medium and computer program product |
| CN115579312B (en) * | 2022-12-09 | 2023-04-18 | 合肥新晶集成电路有限公司 | Wafer detection method, device, equipment, storage medium and computer program product |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113161279B (en) | 2024-10-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113161279A (en) | Device and method for preventing wafer from cracking | |
| KR20200070113A (en) | Substrate processing apparatus and substrate transfer method | |
| JP2018179728A (en) | Position detection system and processing apparatus | |
| CN208954942U (en) | Wafer conveying device | |
| TW201509777A (en) | Rotary table positioning device, load transmission system and plasma processing device | |
| US6601313B2 (en) | System and method for detecting position of semiconductor wafer | |
| TW202314781A (en) | Semiconductor process equipment and wafer condition monitoring method | |
| CN1934692A (en) | Method for detecting transfer shift of transfer mechanism and semiconductor processing equipment | |
| KR101350145B1 (en) | Apparatus for discriminating existence of substrate using lift pin and method for carrying in and testing substrate using the same | |
| KR20020064013A (en) | A bake apparatus | |
| KR20060117537A (en) | Lift pin height alignment jig and lift pin height alignment method using the same | |
| CN116417379A (en) | Wafer detection structure and wafer detection method | |
| JP6865760B2 (en) | Self-aware production wafer | |
| CN101672626A (en) | Thin substrate spacing measuring device | |
| KR100829168B1 (en) | Spacing device | |
| KR20090029419A (en) | Wafer loading device and method for prober | |
| CN111785662B (en) | Wafer detection system and method applied to groove type cleaning machine | |
| KR102411115B1 (en) | Substrate Processing System and Method using the same | |
| CN222106661U (en) | A cylinder lifting and positioning device capable of detecting wafer position accuracy | |
| KR20080037785A (en) | Elevator lift drive device of load lock chamber | |
| TWM630546U (en) | Wafer placing state sensing equipment | |
| KR102681106B1 (en) | Wafer aligner and aligner monitoring device that automatically generates status information by monitoring it | |
| CN221766692U (en) | Conveyor mechanism of ion implanter | |
| WO2023279514A1 (en) | Measurement device, measurement compensation system, measurement method, and measurement compensation method | |
| KR102731436B1 (en) | Apparatus for transferring substrate and method of transferring substrate capable of preventing deviation of clamp ring |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |