KR20050069756A - Method of cleaning bhf nozzle powder - Google Patents

Method of cleaning bhf nozzle powder Download PDF

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Publication number
KR20050069756A
KR20050069756A KR1020030102159A KR20030102159A KR20050069756A KR 20050069756 A KR20050069756 A KR 20050069756A KR 1020030102159 A KR1020030102159 A KR 1020030102159A KR 20030102159 A KR20030102159 A KR 20030102159A KR 20050069756 A KR20050069756 A KR 20050069756A
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KR
South Korea
Prior art keywords
nozzle
bhf
cleaning
rinse
wafer
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KR1020030102159A
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Korean (ko)
Inventor
하광호
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동부아남반도체 주식회사
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Priority to KR1020030102159A priority Critical patent/KR20050069756A/en
Publication of KR20050069756A publication Critical patent/KR20050069756A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

Abstract

본 발명은 BHF 노즐 파우더 세정방법에 관한 것으로서, 최초에 웨이퍼가 척 위에 올리는 단계, BHF 노즐이 먼저 웨이퍼 위로 이동되어 BHF를 분사하면서 공정을 진행하는 단계, 약액공정이 완료되면 BHF 노즐을 원래의 위치로 복귀시키는 단계, 이후 린스/건조 노즐이 와서 DIW 세정을 진행을 한 후 건조하는 단계, 린스/건조 노즐을 대기 위치로 복귀시키는 단계, 및 대기 위치로 복귀된 상기 린스/건조 노즐에 응고된 덩어리를 세정하기 위하여 별도의 컵을 설치하고 2단 밸브를 통하여 DIW를 공급하여 노즐을 세정하는 단계로 이루어지는 것을 특징으로 한다.The present invention relates to a method for cleaning a BHF nozzle powder, in which a wafer is first placed on a chuck, a BHF nozzle is first moved onto a wafer, and a process of spraying BHF is carried out. Returning to the rinse / dry nozzle, then rinsing / drying the nozzles to proceed with DIW cleaning and drying, returning the rinse / drying nozzle to the standby position, and clumps solidified on the rinse / dry nozzle returned to the standby position. In order to clean a separate cup and characterized in that consisting of a step of cleaning the nozzle by supplying DIW through a two-stage valve.

본 발명에 의해서 BHF 덩어리로 인하여 웨이퍼 표면의 과도한 에칭 등의 손실을 방지하으로써 장비 가동률을 향상시킬 수 있는 장점이 있다. Advantageous Effects of Invention The present invention has the advantage of improving equipment operation rate by preventing the loss of excessive etching of the wafer surface due to the BHF agglomerate.

Description

비에이치에프 노즐 파우더 세정 방법{Method of cleaning BHF nozzle powder} Method of cleaning BHF nozzle powder

본 발명은 BHF 노즐 파우더 세정방법에 관한 것으로서, 특히 린스/건조 노즐의 대기 위치에서 BHF 덩어리를 세정하기 위한 BHF 노즐 파우더 세정 방법에 관한 것이다.The present invention relates to a BHF nozzle powder cleaning method, and more particularly, to a BHF nozzle powder cleaning method for cleaning a BHF mass at a standby position of a rinse / dry nozzle.

본 발명은 BHF를 이용하여 웨이퍼 표면을 에칭하는 방법에 관한 것이며, 이는 기존과는 달리 싱글 방식을 이용하고 있다. 본 발명에 관한 에칭 장비는 진공 척으로 척킹된 웨이퍼를 스핀하면서 1차적으로 BHF 공정을 통하여 원하는 만큼의 에칭을 진행한 후 DIW(Deionized Water, 탈이온수) 공정에서 약액성분을 세정하고, 최종적으로 고속회전을 통해 웨이퍼 표면을 건조시키는 장치이다.The present invention relates to a method of etching a wafer surface using BHF, which uses a single method unlike the conventional method. The etching apparatus according to the present invention first spins the wafer chucked with a vacuum chuck and performs etching as desired through the BHF process, and then cleans the chemical component in the DIW process. It is a device for drying the wafer surface through rotation.

이 장치에서 약액분사 방법은 BHF / DIW / DRY 시 각각의 노즐이 해당 스텝에 왔을 경우 웨이퍼 위로 이동하여 분사를 하고 다시 원래의 자기 위치로 돌아가는 것을 반복 진행하면서 모든 공정을 완료하게 된다.In this device, the chemical injection method completes all the processes by repeatedly moving over the wafer, spraying, and returning to the original magnetic position when each nozzle is in the step during BHF / DIW / DRY.

이때 약액의 분사량이라든지 DIW의 유량 등이 공정에 영향을 줄 수 있는 결정적인 요소이며, 따라서 엄격한 관리가 필요하다.In this case, the injection amount of the chemical liquid or the flow rate of the DIW is a decisive factor that may affect the process, and therefore, strict management is required.

도1을 참조하여 종래의 기술을 이하에서 설명한다.The prior art will be described below with reference to FIG.

최초에 웨이퍼가 척 위에 올려지면, BHF 노즐이 먼저 웨이퍼 위로 이동되어 BHF를 분사하면서 공정을 진행한다. 약액공정이 완료되면 BHF 노즐은 원래의 위치로 돌아가고 린스/건조 노즐이 와서 DIW 세정을 진행을 한 후 건조를 하게 되나, 이때 웨이퍼 BHF 약액이 회전의 힘에 의해 린스 노즐이나 건조 노즐에 흄(Hume)으로 달라붙어 있는 현상이 발생한다.When the wafer is initially placed on the chuck, the BHF nozzle is first moved over the wafer to proceed with the process by spraying the BHF. When the chemical liquid process is completed, the BHF nozzle returns to its original position and the rinse / dry nozzle comes to perform DIW cleaning and then dry. Sticking to) occurs.

이런 것을 반복적으로 진행하다보면 BHF 덩어리로 응고가 되어 노즐 끝에 붙어 있다가 공정이 완료될 시기에 웨이퍼 표면에 떨어져 치명적인 공정 결함이 발생한다. Repeatedly, this solidifies into a BHF mass, sticks to the end of the nozzle, and falls to the wafer surface at the end of the process, resulting in a fatal process defect.

따라서, 본 발명은 상기한 종래의 기술이 가지는 단점을 개선하기 위하여 린스/건조 노즐에 생성된 BHF가 응고된 덩어리를 제거하기 위한 세정 방법을 제공하는 것을 그 목적으로 한다. It is therefore an object of the present invention to provide a cleaning method for removing the solidified mass of BHF produced in a rinse / dry nozzle to improve the disadvantages of the prior art described above.

상기한 기술적 과제를 달성하기 위하여, 본 발명은 BHF 노즐 파우더 세정방법에 있어서, 최초에 웨이퍼가 척 위에 올려지는 단계; BHF 노즐이 상기 웨이퍼 위로 이동되어 BHF를 분사하면서 공정을 진행하는 단계; 약액공정이 완료되면 상기 BHF 노즐을 원래의 위치로 복귀시키는 단계; 이후 린스/건조 노즐이 와서 DIW 세정을 진행을 한 후 건조하는 단계; 상기 린스/건조 노즐을 대기 위치로 복귀시키는 단계 및 대기 위치로 복귀된 상기 린스/건조 노즐에 응고된 덩어리를 세정하기 위하여 별도의 컵을 설치하고 2단 밸브를 통하여 일정량의 DIW를 공급하여 노즐을 세정하는 단계로 이루어지는 것을 특징으로 한다.In order to achieve the above technical problem, the present invention is a method for cleaning the BHF nozzle powder, the first step of placing the wafer on the chuck; Moving the BHF nozzle over the wafer to spray the BHF; Returning the BHF nozzle to its original position when the chemical liquid process is completed; After the rinse / dry nozzles come and proceed with DIW cleaning and drying; Returning the rinse / dry nozzle to the standby position and installing a separate cup to supply the solidified mass to the rinse / dry nozzle returned to the standby position and supplying a certain amount of DIW through a two-stage valve Characterized in that it comprises a step of washing.

본 발명의 상기 목적과 기술적 구성 및 그에 따른 작용효과에 관한 자세한 사항은 본 발명의 바람직한 실시예를 도시하고 있는 도면을 참조한 이하 상세한 설명에 의해 보다 명확하게 이해될 것이다.Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

이하, 도2을 참조하여 본 발명의 실시예에 대하여 상세히 설명한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to FIG. 2.

최초에 웨이퍼가 척 위에 올려지면, BHF 노즐이 먼저 웨이퍼 위로 이동되어 BHF를 분사하면서 공정을 진행한다. 약액공정이 완료되면 BHF 노즐은 원래의 위치로 돌아가고 린스/건조 노즐이 와서 DIW 세정을 진행을 한 후 건조를 하게 되나, 이때 웨이퍼 BHF 약액이 회전의 힘에 의해 린스 노즐이나 건조 노즐에 흄(Hume)으로 달라붙어 있는 현상이 발생하게 된다.When the wafer is initially placed on the chuck, the BHF nozzle is first moved over the wafer to proceed with the process by spraying the BHF. When the chemical liquid process is completed, the BHF nozzle returns to its original position and the rinse / dry nozzle comes to perform DIW cleaning and then dry. ) Will stick to each other.

이를 해결하기 위하여 도2의 우측 그림처럼 린스/건조 노즐을 대기 위치에서 응고된 BHF 덩어리를 세정하기 위해서 별도의 컵(CUP)을 설치하고, 2단의 밸브(VALVE)를 통해 항상 일정량의 DIW를 공급시켜 노즐 끝부분을 세정시켜 BHF 덩어리를 제거하는 것이 가능하다.In order to solve this problem, a separate cup (CUP) is installed to clean the BHF mass solidified from the rinse / dry nozzle in the standby position as shown in the right figure of FIG. 2, and a certain amount of DIW is always provided through the two-stage valve. It is possible to remove the BHF mass by supplying the nozzle tip.

그리고 DIW의 사용량 절감을 위해서 항상 절수상태로 유지시켜 놓은 상태로 150cc내지 250cc, 바람직하게는 약 200cc 정도만 계속적으로 흘려 보내고, 이로 인해 박테리아 발생도 억제할 수 있다.In order to reduce the amount of DIW used, 150cc to 250cc, preferably about 200cc, continuously flows continuously while being kept in a water-saving state, thereby suppressing the occurrence of bacteria.

상세히 설명된 본 발명에 의하여 본 발명의 특징부를 포함하는 변화들 및 변형들이 당해 기술 분야에서 숙련된 보통의 사람들에게 명백히 쉬워질 것임이 자명하다. 본 발명의 그러한 변형들의 범위는 본 발명의 특징부를 포함하는 당해 기술 분야에 숙련된 통상의 지식을 가진 자들의 범위 내에 있으며, 그러한 변형들은 본 발명의 청구항의 범위 내에 있는 것으로 간주된다. It will be apparent that changes and modifications incorporating features of the invention will be readily apparent to those skilled in the art by the invention described in detail. It is intended that the scope of such modifications of the invention be within the scope of those of ordinary skill in the art including the features of the invention, and such modifications are considered to be within the scope of the claims of the invention.

상술한 바와 같이 본 발명의 BHF 노즐 파우더 세정방법에 의해서 BHF 덩어리로 인하여 웨이퍼 표면의 과도한 에칭 등의 손실을 방지하으로써 장비 가동률을 향상시킬 수 있는 장점이 있다.As described above, the BHF nozzle powder cleaning method of the present invention has an advantage of improving equipment operation rate by preventing excessive etching of the wafer surface due to BHF lumps.

도1은 종래의 BHF를 이용한 에칭 장비를 나타낸 도면1 is a view showing an etching apparatus using a conventional BHF

도2는 본 발명에 의한 세정 시스템을 구비한 BHF를 이용한 에칭 장비를 나타낸 도면 2 shows an etching apparatus using BHF with a cleaning system according to the present invention.

Claims (2)

BHF 노즐 파우더 세정방법에 있어서,In the BHF nozzle powder cleaning method, 최초에 웨이퍼가 척 위에 올려지는 단계;Initially placing the wafer on the chuck; BHF 노즐이 상기 웨이퍼 위로 이동되어 BHF를 분사하면서 공정을 진행하는 단계;Moving the BHF nozzle over the wafer to spray the BHF; 약액공정이 완료되면 상기 BHF 노즐을 원래의 위치로 복귀시키는 단계;Returning the BHF nozzle to its original position when the chemical liquid process is completed; 이후 린스/건조 노즐이 와서 DIW 세정을 진행을 한 후 건조하는 단계;After the rinse / dry nozzles come and proceed with DIW cleaning and drying; 상기 린스/건조 노즐을 대기 위치로 복귀시키는 단계; 및Returning the rinse / dry nozzle to a standby position; And 대기 위치로 복귀된 상기 린스/건조 노즐에 응고된 덩어리를 세정하기 위하여 별도의 컵을 설치하고 2단 밸브를 통하여 일정량의 DIW를 공급하여 노즐을 세정하는 단계Cleaning the nozzle by installing a separate cup and supplying a certain amount of DIW through the two-stage valve to clean the solidified mass in the rinse / dry nozzle returned to the standby position 를 포함하여 이루어지는 것을 특징으로 하는 BHF 노즐 파우더 세정방법.BHF nozzle powder cleaning method characterized in that it comprises a. 제 1항에 있어서,The method of claim 1, 상기 2단 밸브를 통하여 공급되는 DIW는 절수상태를 유지한 상태에서 150cc내지 250cc가 계속적으로 흘려 보내짐을 특징으로 하는 BHF 노즐 파우더 세정방법.DIW supplied through the two-stage valve is BHF nozzle powder cleaning method characterized in that the continuous flow of 150cc to 250cc flows while maintaining a water-saving state.
KR1020030102159A 2003-12-31 2003-12-31 Method of cleaning bhf nozzle powder KR20050069756A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100826361B1 (en) * 2006-08-21 2008-05-02 삼성전기주식회사 Etchting method and etching apparatus of printed circuit board

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100826361B1 (en) * 2006-08-21 2008-05-02 삼성전기주식회사 Etchting method and etching apparatus of printed circuit board

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