KR20050012691A - 정보 기록 매체 및 그 제조 방법 - Google Patents
정보 기록 매체 및 그 제조 방법Info
- Publication number
- KR20050012691A KR20050012691A KR1020040058053A KR20040058053A KR20050012691A KR 20050012691 A KR20050012691 A KR 20050012691A KR 1020040058053 A KR1020040058053 A KR 1020040058053A KR 20040058053 A KR20040058053 A KR 20040058053A KR 20050012691 A KR20050012691 A KR 20050012691A
- Authority
- KR
- South Korea
- Prior art keywords
- recording medium
- information recording
- layer
- group
- sputtering target
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 49
- 239000000463 material Substances 0.000 claims abstract description 342
- 238000000034 method Methods 0.000 claims abstract description 64
- 230000008859 change Effects 0.000 claims abstract description 57
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 35
- 229910052718 tin Inorganic materials 0.000 claims abstract description 33
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052796 boron Inorganic materials 0.000 claims abstract description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 238000005477 sputtering target Methods 0.000 claims description 141
- 239000000203 mixture Substances 0.000 claims description 139
- 239000000758 substrate Substances 0.000 claims description 72
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 61
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 61
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 53
- 150000004767 nitrides Chemical class 0.000 claims description 44
- 238000004544 sputter deposition Methods 0.000 claims description 40
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 37
- 230000008569 process Effects 0.000 claims description 32
- 229910002909 Bi-Te Inorganic materials 0.000 claims description 25
- 230000031700 light absorption Effects 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 21
- 229910052714 tellurium Inorganic materials 0.000 claims description 18
- 238000012937 correction Methods 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 15
- 229910052684 Cerium Inorganic materials 0.000 claims description 12
- 229910017768 LaF 3 Inorganic materials 0.000 claims description 12
- 229910052746 lanthanum Inorganic materials 0.000 claims description 12
- 229910052731 fluorine Inorganic materials 0.000 claims description 7
- 239000011737 fluorine Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910005939 Ge—Sn Inorganic materials 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 230000035945 sensitivity Effects 0.000 abstract description 40
- 230000003287 optical effect Effects 0.000 abstract description 19
- 230000003252 repetitive effect Effects 0.000 abstract description 12
- 238000009413 insulation Methods 0.000 abstract description 11
- 230000002829 reductive effect Effects 0.000 abstract description 8
- 230000005611 electricity Effects 0.000 abstract 1
- 230000001172 regenerating effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 660
- 239000010408 film Substances 0.000 description 49
- 230000000052 comparative effect Effects 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 23
- 239000007789 gas Substances 0.000 description 22
- 230000006870 function Effects 0.000 description 19
- 238000002425 crystallisation Methods 0.000 description 13
- 230000008025 crystallization Effects 0.000 description 13
- 238000002844 melting Methods 0.000 description 13
- 230000008018 melting Effects 0.000 description 13
- 238000002156 mixing Methods 0.000 description 13
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 229910005900 GeTe Inorganic materials 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 230000015654 memory Effects 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 230000036961 partial effect Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000006467 substitution reaction Methods 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- 125000004434 sulfur atom Chemical group 0.000 description 4
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 3
- 229910005745 Ge—Cr Inorganic materials 0.000 description 3
- 229910002668 Pd-Cu Inorganic materials 0.000 description 3
- 229910005642 SnTe Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 150000004770 chalcogenides Chemical class 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 150000002222 fluorine compounds Chemical class 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 239000012782 phase change material Substances 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229910018575 Al—Ti Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- 229910002665 PbTe Inorganic materials 0.000 description 2
- 229910008458 Si—Cr Inorganic materials 0.000 description 2
- 229910006295 Si—Mo Inorganic materials 0.000 description 2
- 229910006774 Si—W Inorganic materials 0.000 description 2
- QQHSIRTYSFLSRM-UHFFFAOYSA-N alumanylidynechromium Chemical compound [Al].[Cr] QQHSIRTYSFLSRM-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000002427 irreversible effect Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910017625 MgSiO Inorganic materials 0.000 description 1
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- -1 semimetals Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8616—Thermal insulation means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25711—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing carbon
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25718—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing halides (F, Cl, Br, l)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/256—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers improving adhesion between layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
Abstract
Description
Claims (42)
- 기판 및 기록층을 포함하며, 광의 조사 또는 전기 에너지의 인가에 의해 기록 및 재생 중 적어도 한쪽을 가능하게 하는 정보 기록 매체에 있어서,Sn, Ga 및 Zn으로 이루어지는 군 GM으로부터 선택되는 적어도 1개의 원소와, Al, Si 및 B로 이루어지는 군 GL로부터 선택되는 적어도 1개의 원소와, 산소(O)를 포함하고, 또한 질소(N)를 임의로 포함하는 재료층을 더 포함하는 것을 특징으로 하는 정보 기록 매체.
- 제1항에 있어서, 상기 재료층이, 하기의 조성식:MHOILJNK(원자%)(식중, M은 상기 군 GM으로부터 선택되는 적어도 1개의 원소를 나타내고, L은 상기 군 GL로부터 선택되는 적어도 1개의 원소를 나타내고, H, I, J 및 K는, 10≤H≤50, 10≤I≤70, 0<J≤40, 0≤K≤50을 만족한다)로 표시되는 재료를 포함하는 정보 기록 매체.
- 제2항에 있어서, 상기 재료층이, 상기 M으로서 Sn을 포함하는 정보 기록 매체.
- 제2항에 있어서, 상기 재료층이, 상기 M으로서 Ga를 포함하는 정보 기록 매체.
- 제2항에 있어서, 상기 재료층이, 상기 M으로서 Sn을 포함하고, 또한 상기 L로서 Si 및 Al 중 적어도 한쪽의 원소를 포함하는 정보 기록 매체.
- 제2항에 있어서, 상기 재료층이, 상기 M으로서 Ga를 포함하고, 또한 상기 L로서 Si 및 Al 중 적어도 한쪽의 원소를 포함하는 정보 기록 매체.
- 제2항에 있어서, 상기 재료층이, 상기 M으로서 Sn 및 Ga를 포함하고, 또한 상기 L로서 Si 및 Al 중 적어도 한쪽의 원소를 포함하는 정보 기록 매체.
- 기판 및 기록층을 포함하며, 광의 조사 또는 전기 에너지의 인가에 의해 기록 및 재생 중 적어도 한쪽을 가능하게 하는 정보 기록 매체에 있어서,Sn, Ga 및 Zn으로 이루어지는 군 GM으로부터 선택되는 적어도 1개의 원소와, 산소(O)와, La 및 Ce로 이루어지는 군 GA로부터 선택되는 적어도 1개의 원소와, 불소(F)를 포함하는 재료층을 더 포함하는 것을 특징으로 하는 정보 기록 매체.
- 제8항에 있어서, 상기 재료층이, 하기의 조성식 :MHOIADFE(원자%)(식중, M은 상기 군 GM으로부터 선택되는 적어도 1개의 원소를 나타내고, A는 상기 군 GA로부터 선택되는 적어도 1개의 원소를 나타내고, H, I, D 및 E는, 10≤H≤50, 10≤I≤70, 0<D≤40, 0<E≤50을 만족한다)로 표시되는 재료를 포함하는 정보 기록 매체.
- 제1항 또는 제8항에 있어서, 상기 재료층에 있어서, 상기 군 GM으로부터 선택되는 원소가 Sn 및 Ga 중의 적어도 한쪽인 정보 기록 매체.
- 제1항 또는 제8항에 있어서, 상기 재료층에 있어서, 상기 군 GM으로부터 선택되는 원소가 Ga인 정보 기록 매체.
- 제1항 또는 제8항에 있어서, 상기 기록층에 있어서, 상변화가 가역적으로 발생하는 정보 기록 매체.
- 제12항에 있어서, 상기 기록층이, Ge-Sb-Te, Ge-Sn-Sb-Te, Ge-Bi-Te, Ge-Sn-Bi-Te, Ge-Sb-Bi-Te, Ge-Sn-Sb-Bi-Te, Ag-In-Sb-Te 및 Sb-Te로부터 선택되는 어느 1개의 재료를 포함하는 정보 기록 매체.
- 제12항에 있어서, 상기 기록층의 막두께가, 15nm 이하인 정보 기록 매체.
- 제1항 또는 제8항에 있어서, 상기 재료층이, 상기 기록층의 적어도 한쪽 면에 접하여 형성되어 있는 정보 기록 매체.
- 제1항 또는 제8항에 있어서, 상기 기판의 한쪽 표면에, 제1 유전체층, 기록층, 제2 유전체층 및 반사층이 이 순서로 형성되어 있고, 상기 제1 유전체층 및 상기 제2 유전체층 중 적어도 한쪽이 상기 재료층인 정보 기록 매체.
- 제1항 또는 제8항에 있어서, 상기 기판의 한쪽 표면에, 제1 유전체층, 계면층, 기록층, 제2 유전체층, 광흡수 보정층, 및 반사층이 이 순서로 형성되어 있고, 상기 제2 유전체층이 상기 재료층인 정보 기록 매체.
- 기판, 기록층 및 재료층을 포함하며, 광의 조사 또는 전기 에너지의 인가에 의해 기록 및 재생 중 적어도 한쪽을 가능하게 하는 정보 기록 매체의 제조 방법에 있어서,상기 재료층을, Sn, Ga 및 Zn으로 이루어지는 군 GM으로부터 선택되는 적어도 1개의 원소와, Al, Si 및 B로 이루어지는 군 GL로부터 선택되는 적어도 1개의 원소와, 산소(O)를 포함하고, 또한 질소(N)를 임의로 포함하는 스퍼터링 타겟을 사용하여, 스퍼터링법으로 형성하는 공정을 포함하는 것을 특징으로 하는 정보 기록매체의 제조 방법.
- 제18항에 있어서, 상기 스퍼터링 타겟이, 하기의 조성식 :MhOiLjNk(원자%)(식중, M은 상기 군 GM으로부터 선택되는 적어도 1개의 원소를 나타내고, L은 상기 군 GL로부터 선택되는 적어도 1개의 원소를 나타내고, h, i, j 및 k는, 10 ≤h≤50, 10≤i≤70, 0<j≤40, 0≤k≤50을 만족한다)로 표시되는 재료를 포함하는 정보 기록 매체의 제조 방법.
- 제19항에 있어서, 상기 스퍼터링 타겟이, 상기 M으로서 Sn을 포함하는 정보 기록 매체의 제조 방법.
- 제19항에 있어서, 상기 스퍼터링 타겟이, 상기 M으로서 Ga를 포함하는 정보 기록 매체의 제조 방법.
- 제19항에 있어서, 상기 스퍼터링 타겟이, 상기 M으로서 Sn을 포함하고, 또한 상기 L로서 Si 및 Al 중의 적어도 한쪽의 원소를 포함하는 정보 기록 매체의 제조 방법.
- 제19항에 있어서, 상기 스퍼터링 타겟이, 상기 M으로서 Ga를 포함하고, 또한 상기 L로서 Si 및 Al 중의 적어도 한쪽의 원소를 포함하는 정보 기록 매체의 제조 방법.
- 제19항에 있어서, 상기 스퍼터링 타겟이, 상기 M으로서 Sn 및 Ga를 포함하고, 또한 상기 L로서 Si 및 Al 중의 적어도 한쪽의 원소를 포함하는 정보 기록 매체의 제조 방법.
- 기판, 기록층 및 재료층을 포함하며, 광의 조사 또는 전기 에너지의 인가에 의해 기록 및 재생 중 적어도 한쪽을 가능하게 하는 정보 기록 매체의 제조 방법에 있어서,상기 재료층을, Sn, Ga 및 Zn으로 이루어지는 군 GM으로부터 선택되는 적어도 1개의 원소와, 산소(O)와, La 및 Ce로 이루어지는 군 GA로부터 선택되는 적어도 1개의 원소와, 불소(F)를 포함하는 스퍼터링 타겟을 사용하여, 스퍼터링법으로 형성하는 공정을 포함하는 것을 특징으로 하는 정보 기록 매체의 제조 방법
- 제25항에 있어서, 상기 스퍼터링 타겟이, 하기의 조성식 :MhOiAdFe(원자%)(식중, M은 상기 군 GM으로부터 선택되는 적어도 1개의 원소를 나타내고, A는 상기 군 GA로부터 선택되는 적어도 1개의 원소를 나타내고, h, i, d 및 e는, 10≤h≤50, 10≤i≤70, 0<d≤40, 0<e≤50을 만족한다)로 표시되는 재료를 포함하는 정보 기록 매체의 제조 방법.
- 제18항 또는 제25항에 있어서, 상기 스퍼터링 타겟에 있어서, 상기 군 GM으로부터 선택되는 원소가 Sn 및 Ga 중의 적어도 한쪽인 정보 기록 매체.
- 제18항에 있어서, 상기 스퍼터링 타겟이, (a) Sn, Ga 및 Zn으로 이루어지는 군 GM으로부터 선택되는 적어도 1개의 원소의 산화물과, (b) Al, Si 및 B로 이루어지는 군 GL로부터 선택되는 적어도 1개의 원소의 산화물 및 질화물중의 적어도 한쪽을 포함하는 정보 기록 매체의 제조 방법.
- 제25항에 있어서, 상기 스퍼터링 타겟이, (a) Sn, Ga 및 Zn으로 이루어지는 군 GM으로부터 선택되는 적어도 1개의 원소의 산화물과, (c) La 및 Ce로 이루어지는 군 GA으로부터 선택되는 적어도 1개의 원소의 불화물을 포함하는 정보 기록 매체의 제조 방법.
- 제28항 또는 제29항에 있어서, 상기 스퍼터링 타겟에 있어서, 군 GM으로부터 선택되는 원소의 산화물이 Sn 및 Ga 중의 적어도 한쪽의 원소의 산화물인 정보 기록 매체의 제조 방법.
- 제30항에 있어서, 상기 스퍼터링 타겟에 있어서, 군 GM으로부터 선택되는 원소의 산화물이 Ga의 산화물인 정보 기록 매체의 제조 방법.
- 제28항 또는 제29항에 있어서, 상기 스퍼터링 타겟이, 상기 군 GM으로부터 선택되는 원소의 산화물군을 50mol% 이상 포함하는 정보 기록 매체의 제조 방법.
- 제32항에 있어서, 상기 스퍼터링 타겟이, Sn의 산화물과 Ga의 산화물을 합쳐서 50mol% 이상 포함하는 정보 기록 매체의 제조 방법.
- 제28항에 있어서, 상기 스퍼터링 타겟이, 군 GL로부터 선택되는 원소의 산화물 및 질화물 중의 적어도 한쪽으로서, Si 및 Al 중의 적어도 한쪽의 원소의 산화물및 질화물 중의 적어도 한쪽을 포함하는 정보 기록 매체의 제조 방법.
- 제32항에 있어서, 상기 스퍼터링 타겟이, 하기의 조성식 :(D)x(E)100-x(mol%)(식중, D는 SnO2, Ga2O3및 ZnO로부터 선택되는 적어도 1개의 산화물을 나타내고, E는 AlN, Si3N4, Al2O3및 SiO2로부터 선택되는 적어도 1개의 화합물을 나타내고, x는 50≤x≤95를 만족한다)로 표시되는 재료를 포함하는 정보 기록 매체의 제조 방법.
- 제35항에 있어서, 상기 스퍼터링 타겟이, 하기의 조성식 :(SnO2)a1(Ga2O3)a2(E1)b(mol%)(식중, El은 AlN 및 Si3N4중의 적어도 한쪽의 질화물을 나타내고, a1 및 a2는, 50≤a1+a2≤95, 또한 a1, a2는 어느 한쪽이 0이어도 되고, b는 5≤b≤50을 만족한다. 또, a1+a2+b=100이다)로 표시되는 재료를 포함하는 정보 기록 매체의 제조 방법.
- 제35항에 있어서, 상기 스퍼터링 타겟이, 하기의 조성식 :(D)x(SiO2)y(El)100-x-y(mol%)(식중, D는 SnO2, Ga2O3및 ZnO로부터 선택되는 적어도 1개의 산화물을 나타내고, E1은 AlN 및 Si3N4중의 적어도 한쪽의 질화물을 나타내고, x 및 y는, 50≤x≤95, 5≤y≤35, 55≤x+y≤100을 만족한다)로 표시되는 재료를 포함하는 정보 기록 매체의 제조 방법.
- 제35항에 있어서, 상기 스퍼터링 타겟에 있어서, 상기 D가 SnO2및 Ga2O3중 적어도 한쪽인 정보 기록 매체의 제조 방법.
- 제35항에 있어서, 상기 스퍼터링 타겟에 있어서, 상기 D가 Ga2O3인 정보 기록 매체의 제조 방법.
- 제29항에 있어서, 상기 스퍼터링 타겟이, 하기의 조성식 :(D)x(A)100-x(mol%)(식중, D는 SnO2, Ga2O3및 ZnO으로부터 선택되는 적어도 1개의 산화물을 나타내고, A는 LaF3및 CeF3로부터 선택되는 적어도 1개의 불화물을 나타내고, x는 50≤x≤95를 만족한다)로 표시되는 재료를 포함하는 정보 기록 매체의 제조 방법.
- 제40항에 있어서, 상기 스퍼터링 타겟에 있어서, 상기 D가 SnO2및 Ga2O3중 적어도 한쪽인 정보 기록 매체의 제조 방법.
- 제40항에 있어서, 상기 스퍼터링 타겟에 있어서, 상기 D가 Ga2O3인 정보 기록 매체의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003280165 | 2003-07-25 | ||
JPJP-P-2003-00280165 | 2003-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050012691A true KR20050012691A (ko) | 2005-02-02 |
KR100593796B1 KR100593796B1 (ko) | 2006-06-26 |
Family
ID=33487726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040058053A KR100593796B1 (ko) | 2003-07-25 | 2004-07-24 | 정보 기록 매체 및 그 제조 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7255906B2 (ko) |
EP (2) | EP1501091B1 (ko) |
KR (1) | KR100593796B1 (ko) |
CN (1) | CN100587820C (ko) |
TW (1) | TWI370449B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8828760B2 (en) | 2012-07-30 | 2014-09-09 | Electronics And Telecommunications Research Institute | Method of fabricating organic light emitting device |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3852408B2 (ja) * | 2002-07-09 | 2006-11-29 | ソニー株式会社 | 光記録媒体 |
TW200534235A (en) | 2004-03-10 | 2005-10-16 | Matsushita Electric Ind Co Ltd | Information recording medium and method for manufacturing the same |
JP4529493B2 (ja) * | 2004-03-12 | 2010-08-25 | 株式会社日立製作所 | 半導体装置 |
US7897231B2 (en) * | 2005-04-01 | 2011-03-01 | Panasonic Corporation | Optical information recording medium and method for manufacturing the same |
US20080285417A1 (en) * | 2005-04-15 | 2008-11-20 | Hideo Kusada | Optical Information Recording Medium and Method for Recording to the Same |
JP2007095235A (ja) * | 2005-09-30 | 2007-04-12 | Victor Co Of Japan Ltd | 光記録媒体 |
CN101317225A (zh) * | 2005-11-30 | 2008-12-03 | 松下电器产业株式会社 | 信息记录介质及其制造方法 |
JP4848379B2 (ja) | 2006-01-31 | 2011-12-28 | パナソニック株式会社 | 情報記録媒体およびその製造方法、並びにその製造装置 |
JP4871062B2 (ja) * | 2006-03-01 | 2012-02-08 | 株式会社リコー | スパッタリングターゲット及びその製造方法、並びに追記型光記録媒体 |
KR100807230B1 (ko) * | 2006-09-27 | 2008-02-28 | 삼성전자주식회사 | 상변화 물질층 및 이를 포함하는 상변화 메모리 장치 |
US9361294B2 (en) * | 2007-05-31 | 2016-06-07 | Red Hat, Inc. | Publishing tool for translating documents |
US10296588B2 (en) * | 2007-05-31 | 2019-05-21 | Red Hat, Inc. | Build of material production system |
WO2010052842A1 (ja) * | 2008-11-07 | 2010-05-14 | パナソニック株式会社 | 情報記録媒体とその製造方法、およびスパッタリングターゲット |
US20100297381A1 (en) * | 2009-05-22 | 2010-11-25 | Cmc Magnetics Corporation | Method of improving read stability of optical recording medium and optical recording medium manufactured using the method |
CN102051175B (zh) * | 2009-10-30 | 2013-05-08 | 海洋王照明科技股份有限公司 | 镧系镓酸盐发光材料及制备方法 |
KR101871803B1 (ko) | 2011-09-06 | 2018-06-29 | 한국전자통신연구원 | 유기발광다이오드 및 그의 제조방법 |
JP6212869B2 (ja) * | 2012-02-06 | 2017-10-18 | 三菱マテリアル株式会社 | 酸化物スパッタリングターゲット |
CN105098068A (zh) * | 2014-05-22 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
TWI579839B (zh) * | 2015-02-17 | 2017-04-21 | 駿康科技有限公司 | 資訊記錄媒體記錄層之形成方法 |
JP6431940B2 (ja) | 2017-02-22 | 2018-11-28 | 株式会社神戸製鋼所 | 誘電体層、光記録媒体、スパッタリングターゲット及び酸化物 |
CN110767745A (zh) * | 2019-09-18 | 2020-02-07 | 华南理工大学 | 复合金属氧化物半导体及薄膜晶体管与应用 |
CN110797395A (zh) * | 2019-09-18 | 2020-02-14 | 华南理工大学 | 掺杂型金属氧化物半导体及薄膜晶体管与应用 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53125001A (en) * | 1977-04-08 | 1978-11-01 | Hitachi Ltd | Member for recording of information |
JPH026849A (ja) | 1988-06-27 | 1990-01-11 | Matsushita Electric Ind Co Ltd | セルフクリーニング面の形成方法 |
JPH0725209B2 (ja) | 1992-12-17 | 1995-03-22 | 松下電器産業株式会社 | 光学的情報記録部材 |
JP3365653B2 (ja) | 1993-07-13 | 2003-01-14 | 住友ゴム工業株式会社 | 空気入りタイヤ |
JP3612927B2 (ja) | 1997-03-31 | 2005-01-26 | 松下電器産業株式会社 | 光学情報記録媒体 |
US6821707B2 (en) | 1996-03-11 | 2004-11-23 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, producing method thereof and method of recording/erasing/reproducing information |
CN1168080C (zh) | 1996-03-11 | 2004-09-22 | 松下电器产业株式会社 | 光学信息记录媒体 |
CN1179335C (zh) * | 1997-03-31 | 2004-12-08 | 松下电器产业株式会社 | 光学信息记录媒体及其制造方法 |
JP3636914B2 (ja) * | 1998-02-16 | 2005-04-06 | 株式会社日鉱マテリアルズ | 高抵抗透明導電膜及び高抵抗透明導電膜の製造方法並びに高抵抗透明導電膜形成用スパッタリングターゲット |
JPH11306597A (ja) | 1998-04-27 | 1999-11-05 | Matsushita Electric Ind Co Ltd | 光学的情報記録媒体及びその製造方法 |
US6544616B2 (en) * | 2000-07-21 | 2003-04-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
JP2001126312A (ja) * | 1999-10-28 | 2001-05-11 | Hitachi Maxell Ltd | 情報記録媒体 |
US6432502B1 (en) * | 1999-11-17 | 2002-08-13 | Matsushita Electric Industrial Co., Ltd. | Optical recording medium and method of manufacturing the same |
TW519637B (en) | 2000-03-10 | 2003-02-01 | Matsushita Electric Ind Co Ltd | Information recording medium and its manufacturing method |
JP3666854B2 (ja) | 2000-03-10 | 2005-06-29 | 松下電器産業株式会社 | 情報記録媒体およびその製造方法 |
JP2002079757A (ja) | 2000-06-23 | 2002-03-19 | Tdk Corp | 光記録媒体 |
US6670016B1 (en) * | 2000-11-24 | 2003-12-30 | Korea Institute Of Science & Technology | High density optical information recording medium |
JP3777111B2 (ja) * | 2001-07-12 | 2006-05-24 | 日立マクセル株式会社 | 情報記録媒体および製造方法 |
TWI249164B (en) * | 2001-11-22 | 2006-02-11 | Tdk Corp | Optical recording medium |
JP2003228881A (ja) | 2002-02-04 | 2003-08-15 | Hitachi Ltd | 情報記録媒体 |
KR100906056B1 (ko) * | 2002-03-19 | 2009-07-03 | 파나소닉 주식회사 | 정보 기록매체와 그 제조 방법 |
JP2004071079A (ja) * | 2002-08-08 | 2004-03-04 | Hitachi Ltd | 情報記録媒体 |
TW200428382A (en) * | 2003-05-09 | 2004-12-16 | Matsushita Electric Ind Co Ltd | Optical information recording medium |
TW201506921A (zh) * | 2003-07-24 | 2015-02-16 | Panasonic Corp | 資訊記錄媒體及其製造方法 |
TW200534235A (en) * | 2004-03-10 | 2005-10-16 | Matsushita Electric Ind Co Ltd | Information recording medium and method for manufacturing the same |
-
2004
- 2004-07-22 TW TW093121857A patent/TWI370449B/zh not_active IP Right Cessation
- 2004-07-23 EP EP04254413A patent/EP1501091B1/en not_active Expired - Fee Related
- 2004-07-23 EP EP10013664A patent/EP2296148B1/en not_active Expired - Fee Related
- 2004-07-23 US US10/898,709 patent/US7255906B2/en not_active Expired - Fee Related
- 2004-07-24 KR KR1020040058053A patent/KR100593796B1/ko active IP Right Grant
- 2004-07-26 CN CN200410058643A patent/CN100587820C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8828760B2 (en) | 2012-07-30 | 2014-09-09 | Electronics And Telecommunications Research Institute | Method of fabricating organic light emitting device |
Also Published As
Publication number | Publication date |
---|---|
TW200509117A (en) | 2005-03-01 |
CN1577548A (zh) | 2005-02-09 |
EP2296148A1 (en) | 2011-03-16 |
EP1501091B1 (en) | 2012-04-18 |
US7255906B2 (en) | 2007-08-14 |
EP1501091A3 (en) | 2008-03-26 |
CN100587820C (zh) | 2010-02-03 |
US20050018593A1 (en) | 2005-01-27 |
TWI370449B (en) | 2012-08-11 |
EP1501091A2 (en) | 2005-01-26 |
KR100593796B1 (ko) | 2006-06-26 |
EP2296148B1 (en) | 2012-09-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100593796B1 (ko) | 정보 기록 매체 및 그 제조 방법 | |
KR100906056B1 (ko) | 정보 기록매체와 그 제조 방법 | |
US7967956B2 (en) | Information recording medium and method for producing the same | |
JP4567750B2 (ja) | 情報記録媒体とその製造方法 | |
US7709073B2 (en) | Information recording medium | |
KR20060043831A (ko) | 정보 기록 매체 및 이를 제조하기 위한 방법 | |
US7858290B2 (en) | Information recording medium and method for manufacturing the same | |
JP4308160B2 (ja) | 情報記録媒体とその製造方法 | |
JP3961411B2 (ja) | 情報記録媒体とその製造方法 | |
JP4871733B2 (ja) | 情報記録媒体とその製造方法 | |
JP4468984B2 (ja) | 情報記録媒体とその製造方法 | |
JP4242674B2 (ja) | 情報記録媒体とその製造方法 | |
JP4227554B2 (ja) | 情報記録媒体とその製造方法 | |
JP4213579B2 (ja) | 情報記録媒体とその製造方法 | |
KR101010163B1 (ko) | 정보기록 매체와 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130603 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140603 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150518 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160517 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170522 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180518 Year of fee payment: 13 |