KR200456908Y1 - Flatness Adjustable Susceptor and Atomic Layer deposition Apparatus having the Same - Google Patents

Abstract

Provided are a flatness adjusting susceptor capable of adjusting the flatness of a susceptor by a bolt fastening a susceptor and a drive shaft, and an atomic layer deposition apparatus including the same. The atomic layer deposition apparatus according to the present invention includes a process chamber in which a plurality of wafers are accommodated and a deposition process is performed, a susceptor provided in the process chamber, on which a plurality of wafers are seated, and disposed on an upper portion of the process chamber to be deposited into the wafer. A shower head providing a gas, a deposition gas supply unit supplying a deposition gas to the shower head, and a driving shaft provided below the susceptor to rotate and lift the susceptor, wherein the susceptor penetrates a central portion thereof. And a fastening member inserted into the coupling hole from the upper surface of the susceptor to fasten the susceptor to the drive shaft, and the flatness of the susceptor can be adjusted by adjusting the fastening degree of the fastening member. According to the flatness adjusting susceptor and the atomic layer deposition apparatus including the same, the flatness of the susceptor can be easily and efficiently adjusted.

Atomic layer deposition apparatus, susceptors, flatness.

Description

Flatness Adjustable Susceptor and Atomic Layer Deposition Apparatus Having the Same

The susceptor of the present invention and the atomic layer deposition apparatus including the same, and specifically to the susceptor and the atomic layer deposition apparatus including the same to adjust the degree of fastening the bolt fastening the susceptor and the drive shaft It is about.

In general, in order to deposit a thin film having a predetermined thickness on a wafer such as a semiconductor wafer or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction ( thin film manufacturing method using chemical vapor deposition (CVD) or the like is used.

As the design rule of the semiconductor device is drastically fine, a thin film of a fine pattern is required, and the step of the region where the thin film is formed is also very large. Accordingly, the use of an atomic layer deposition (ALD) method, which is capable of forming a very fine pattern of atomic layer thickness very uniformly and has excellent stem coverage, has been increasing.

The atomic layer deposition (ALD) method is similar to the conventional chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, unlike conventional chemical vapor deposition (CVD) methods injecting a plurality of gas molecules into the process chamber at the same time to deposit the reaction product generated above the wafer onto the wafer, the atomic layer deposition method processes one gaseous material. It is different in that it is injected into the chamber and then purged to leave only the physically adsorbed gas on top of the heated wafer, and then inject other gaseous materials to deposit chemical reaction products that occur only on the top of the wafer. The thin film implemented through such an atomic layer deposition method has a high step coverage characteristic and has the advantage that it is possible to implement a pure thin film having a low impurity content, which is widely attracting attention.

Meanwhile, a semi-batch type atomic layer deposition apparatus capable of simultaneously depositing thin films on a plurality of wafers is disclosed. In the conventional semi-batch type atomic layer deposition apparatus, a plurality of wafers are disposed radially along the circumferential direction on the susceptor, and as the susceptor rotates, source gas is sequentially sprayed onto the wafer to perform the deposition process.

Since the susceptor rotates about the drive shaft, it is important to maintain the desired flatness. However, at present, the susceptor of the atomic layer deposition apparatus is fastened to the drive shaft by assembly, and it is difficult to adjust the flatness of the susceptor during or after the assembly process.

Therefore, an object according to some of the embodiments of the present invention is configured so that the flatness can be easily adjusted using an existing fastening member connecting the susceptor and the drive shaft without separately providing a member for flatness control. In addition, the present invention provides a flatness adjusting susceptor and an atomic layer deposition apparatus including the same, which can reduce manufacturing costs and avoid complicated structures.

In order to achieve the above objects, a susceptor for an atomic layer deposition apparatus according to an embodiment of the present invention, includes a coupling hole formed through the center of the susceptor and a fastening member inserted into the coupling hole from the upper surface of the susceptor. In addition, the fastening member is coupled to the susceptor and the drive shaft located below the susceptor, it is possible to adjust the flatness of the susceptor by adjusting the fastening degree of the fastening member.

Preferably, the fastening member is a bolt, by adjusting the fastening degree, that is, the tightening degree of the bolt can adjust the flatness of the susceptor.

At least three or more bolts may be provided, and the plurality of bolts may be disposed to be spaced apart from each other at the same angle in the circumferential direction.

The atomic layer deposition apparatus according to the present invention includes a process chamber in which a plurality of wafers are accommodated and a deposition process is performed, a susceptor provided in the process chamber, on which a plurality of wafers are seated, and disposed on an upper portion of the process chamber to be deposited into the wafer. A shower head providing a gas, a deposition gas supply unit supplying a deposition gas to the shower head, and a driving shaft provided below the susceptor to rotate and lift the susceptor, wherein the susceptor includes: And a coupling member penetrating through the coupling hole, and a coupling member inserted into the coupling hole from the upper surface to fasten the susceptor to the driving shaft. The coupling groove is formed at a position corresponding to the coupling hole on the upper portion of the driving shaft, and the coupling groove into which the coupling member is inserted. Include. By adjusting the fastening degree of the fastening member, it is possible to adjust the flatness of the susceptor.

Preferably, the fastening member is composed of a plurality of bolts, the adjacent bolts are arranged to be spaced apart at the same angle in the circumferential direction, it is possible to adjust the degree of fastening of the susceptor by adjusting the fastening degree of the bolts.

According to the flatness adjusting susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, the flatness can be easily adjusted by adjusting the fastening degree of the bolt connecting the susceptor and the drive shaft. There is an effect that can be performed.

In addition, according to the flatness adjusting susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, it is possible to easily adjust the flatness of the susceptor before assembling the susceptor and the drive shaft. have.

In addition, according to the flatness adjusting susceptor and the atomic layer deposition apparatus including the same according to an embodiment of the present invention, the existing fastening member connecting the susceptor and the drive shaft without using a member for flatness control is separately used. By adjusting the flatness, the manufacturing cost can be reduced and the complexity of the structure can be avoided.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited or limited by the embodiments. For reference, the same numbers in this description refer to substantially the same elements and can be described with reference to the contents described in the other drawings under the above-mentioned rules, and the contents which are judged to be obvious to the person skilled in the art or repeated can be omitted.

1 is a longitudinal sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention, Figure 2 is a plan view and a longitudinal sectional view of a susceptor according to an embodiment of the present invention, Figure 3 is a 'C of FIG. 'Is an enlarged view of the part.

And an exploded perspective view of the drive shaft, FIG. 3 is a state diagram of the coupling between the susceptor and the drive shaft, and FIG. 4 is a plan view of the susceptor.

Hereinafter, an atomic layer deposition apparatus 100 according to an embodiment of the present invention will be described in detail with reference to FIGS. 1 to 4.

Referring to FIG. 1, the atomic layer deposition apparatus 100 includes a process chamber 110 in which a wafer is accommodated and a deposition process is performed, a susceptor 120 in which the wafer is seated, and a process chamber in which the wafer is seated. The shower head 130 is provided on the upper portion 110 to provide the deposition gas to the wafer, and the deposition gas supply unit 140 to supply the deposition gas to the shower head 130.

The wafer may be a silicon wafer. However, the object of the present invention is not limited to a silicon wafer, and the wafer may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). In addition, the wafer is not limited in shape and size by drawing, and may have substantially various shapes and sizes, such as circular and rectangular plates.

The process chamber 110 accommodates a wafer and provides a space in which a deposition process is performed. The process chamber 110 includes a susceptor 120 on which a wafer is seated and a shower head 130 that provides deposition gas to a wafer. It is provided.

The susceptor 120 is provided in the process chamber 110, and a plurality of wafers are seated. Here, the susceptor 120 is a semi-batch type with excellent throughput. One surface of the wafer is seated on the upper surface of the susceptor 120 so that a deposition process may be performed by simultaneously receiving a plurality of wafers. It is disposed radially along the circumferential direction of the susceptor 120. For example, the susceptor 120 may be seated with six wafers spaced apart from each other by a predetermined interval.

A drive shaft 150 for rotating the susceptor 120 is provided below the susceptor 120 to rotate the susceptor 120 so that the wafer revolves about the center point of the susceptor 120. In addition, the driving shaft 150 moves the susceptor 120 up and down a predetermined distance in the process chamber 110.

The showerhead 130 is provided above the process chamber 110 to provide deposition gas to the wafer surface seated on the susceptor 120.

The deposition gas includes a source gas containing a material constituting the thin film to be formed on the wafer surface and a purge gas for purging the source gas. In addition, according to the present embodiment, different kinds of gases are used as the source gas, which reacts with each other on the wafer surface to form a thin film material, and the purge gas does not chemically react with the source gas, the wafer, and the thin film formed on the wafer. Do not use stable gas.

One side of the shower head 130 is connected to the deposition gas supply unit 140 for supplying the deposition gas to the shower head 130.

Hereinafter, referring to FIG. 2, the susceptor 120, the driving shaft 150, and the fastening member 124 according to the exemplary embodiment of the present invention will be described in detail.

A coupling hole 122 is formed in the center of the susceptor 120. The coupling hole 122 penetrates from the upper surface of the susceptor 120 to the lower surface, and the upper portion of the coupling hole 122 located on the upper surface side of the susceptor 120 is inserted into the bolt 124 as a fastening member. It can be formed as a hole of an area larger than the head of the bolt 124.

On the inner circumferential surface of the coupling hole 122, a screw bone corresponding to the thread of the bolt 124 is formed. The screw bone may be formed over the entire area of the inner circumferential surface of the bolt 124, and may also be formed only on one side of the inner circumferential surface of the bolt 124 for the convenience of processing.

Looking at the coupling of the susceptor 120 and the drive shaft 150 in detail, the susceptor 120 is not directly coupled to the drive shaft 150, the susceptor support located between the susceptor 120 and the drive shaft 150 Coupled via 126. The drive shaft 150 and the susceptor support 126 are assembled, and the base plate of the susceptor support 126 and the susceptor 120 is fastened through the bolt 124.

The coupling hole 122 is formed to penetrate to the susceptor support 126. In the present embodiment, the area of the coupling hole 122 on the susceptor support 126 side is made smaller than the head of the bolt 124. By forming the screw bone only in the coupling hole 122 on the susceptor support 126 side, the base plate of the susceptor support 126 and the susceptor 120 is easily fastened by the bolt 124.

The coupling hole 122 may be provided in plural in the center of the susceptor 120. By the plurality of coupling holes 122, not only the susceptor 120 and the driving shaft 150 may be stably coupled, but also the flatness may be adjusted by the fastening member as described later.

A cap may be provided at an upper portion of the coupling hole 122, and the cap may be a member for sealing the coupling hole 122. That is, when the flatness adjustment is not necessary, by sealing the coupling hole 122 using the cap, it is possible to prevent particles (particles) and the like to enter the coupling hole 122.

The fastening member is a member inserted into the coupling hole 122 from the upper surface of the susceptor 120 to fasten the susceptor 120 to the drive shaft 150.

The outer periphery of the bolt 124 is formed with a thread corresponding to the screw bone formed on the inner peripheral surface of the coupling hole 122, the base plate of the susceptor 120 and the susceptor support 126 through the coupling hole 122 By fastening), the susceptor 120 and the drive shaft 150 are stably and firmly coupled.

The length of the bolt 124 is configured such that the bolt 124 protrudes below the susceptor support 126 through the coupling hole 122.

As shown in FIG. 2, a plurality of bolts 124 may be provided, and at least three bolts 124 may be provided. The bolts 124 may be disposed to be spaced apart from each other at equal intervals in the circumferential direction of the bolts.

The flatness of the susceptor 120 can be adjusted by the plurality of bolts 124. For example, when one side of the susceptor 120 is raised, the flatness can be easily adjusted by further tightening the bolt on the raised side. That is, by providing a plurality of bolts 124, it is possible to adjust the height of the susceptor 120 in all directions.

In the present embodiment, four bolts are arranged at intervals of 90 degrees, and coupling holes 122 are formed at positions corresponding thereto.

2 and 3, the flatness adjusting method of the susceptor 120 will be described in detail below.

In order to adjust the flatness of the susceptor 120, the fastening degree of the bolt 124 is adjusted. Since the head of the bolt 124 is located above the susceptor 120, the height of the susceptor 120 can be easily adjusted by adjusting the tightening degree of the bolt 124 using the head.

As shown in FIG. 3, the ends of the bolts 124 protruding from the lower part of the susceptor support 126 come into contact with the upper part of the driving shaft 150. When the bolt 124 is further tightened, the bolt 124 is further advanced toward the driving shaft 150 to widen the gap G between the susceptor support 126 and the base plate of the susceptor 120. On the contrary, when the bolt 124 is loosened, the bolt 124 is retracted from the drive shaft 150 so that the gap G is narrowed.

For example, when one side of the susceptor 120 is lowered, the height of the susceptor 120 may be adjusted by adjusting the tightening degree of the bolt 124 fastened to the one side. That is, when the bolt 124 located at one side is released, the height of the susceptor 120 is increased, and when the susceptor 120 is positioned at a desired height, the adjustment of the bolt 124 is completed. Alternatively, the desired flatness can be maintained by further tightening the bolt 124 located at the side facing down.

In this embodiment, since four bolts 124 are fastened along the circumferential direction at intervals of 90 degrees, the flatness of the susceptor 120 can be easily adjusted through tightening and releasing of the bolts 124 at positions requiring adjustment. have.

In the manner in which the bolt was fastened under the susceptor plate, flatness adjustment cannot be performed after assembly, but according to the flatness adjustment susceptor and the atomic layer deposition apparatus including the same according to the embodiment of the present invention, There is an effect that can be easily maintained.

As described above, the present invention has been described with reference to the preferred embodiment of the present invention, but those skilled in the art can variously modify and devise the present invention without departing from the spirit and scope of the present invention as set forth in the claims below. It will be appreciated that it can be changed.

Included in this specification.

1 is a longitudinal sectional view of an atomic layer deposition apparatus according to an embodiment of the present invention;

2 is an exploded perspective view of a susceptor and a drive shaft according to an embodiment of the present invention;

3 is a state diagram of the coupling of the susceptor and the drive shaft according to an embodiment of the present invention;

4 is a plan view of a susceptor according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

100: atomic layer deposition apparatus 110: process chamber

120: susceptor 122: coupling hole

124: bolt 126: susceptor support

130: shower head 140: deposition gas supply unit

150: drive shaft

Claims (3)

In a susceptor for an atomic layer deposition apparatus, A coupling hole formed through the center of the susceptor; And A fastening member inserted into the coupling hole from an upper surface of the susceptor; Including, The fastening member is coupled to the susceptor and the drive shaft located below the susceptor, the susceptor for atomic layer deposition apparatus characterized in that to adjust the degree of fastening of the fastening member to adjust the flatness of the susceptor. The method of claim 1, The fastening member is a susceptor for an atomic layer deposition apparatus, characterized in that the bolt. 3. The method of claim 2, The bolt is provided with a plurality of at least three or more, the plurality of bolts are susceptors for atomic layer deposition apparatus, characterized in that the adjacent bolts are spaced apart at the same angle in the circumferential direction.

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