KR20040106060A - 씨모스 박막 트랜지스터 및 이를 사용한 디스플레이디바이스 - Google Patents
씨모스 박막 트랜지스터 및 이를 사용한 디스플레이디바이스 Download PDFInfo
- Publication number
- KR20040106060A KR20040106060A KR1020030037246A KR20030037246A KR20040106060A KR 20040106060 A KR20040106060 A KR 20040106060A KR 1020030037246 A KR1020030037246 A KR 1020030037246A KR 20030037246 A KR20030037246 A KR 20030037246A KR 20040106060 A KR20040106060 A KR 20040106060A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- film transistor
- type thin
- active channel
- type tft
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 110
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 15
- 229920005591 polysilicon Polymers 0.000 claims abstract description 14
- 238000002425 crystallisation Methods 0.000 claims description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 12
- 239000011229 interlayer Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract description 3
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (9)
- P형 박막 트랜지스터와 N형 박막 트랜지스터의 액티브 채널 방향이 서로 다르며 상기 P형 박막 트랜지스터에 포함되는 프라이머리 결정립 경계는 액티브 채널 방향과 이루는 각이 60°이상이고, 120°이하이고, N형 박막 트랜지스터에 포함되는 프라이머리 결정립 경계가 액티브 채널 방향과 이루는 각이 - 30°이상이고 30°이하이며, 상기 액티브 채널은 다결정 실리콘으로 형성되는 것을 특징으로 하는 CMOS 박막 트랜지스터.
- 제 1항에 있어서,상기 P형 박막트랜지스터는 전류 이동도가 낮게 되도록 형성되며, N형 박막트랜지스터는 전류 이동도가 높게 되도록 형성되는 것인 CMOS 박막 트랜지스터.
- 제 1항에 있어서,상기 P형 박막 트랜지스터는 문턱 전압이 낮게 되도록 형성되며, N형 박막트랜지스터는 문턱 전압이 높게 되도록 형성되는 것인 CMOS 박막 트랜지스터.
- 제 1항에 있어서,상기 P형 박막 트랜지스터와 N형 박막 트랜지스터의 채널 길이는 동일한 것인 CMOS 박막 트랜지스터.
- 제 1항에 있어서,상기 폴리 실리콘은 SLS 결정화법에 의하여 제조되는 것인 CMOS 박막 트랜지스터.
- 제 1항에 있어서,상기 P형 박막 트랜지스터에 포함되는 프라이머리 결정립 경계는 액티브 채널 방향과는 수직이고, N형 박막 트랜지스터에 포함되는 프라이머리 결정립 경계는 액티브 채널 방향과 수평인 CMOS 박막 트랜지스터.
- 제 1항에 있어서,상기 CMOS 박막 트랜지스터는 LDD 구조 또는 오프-셋 구조를 포함하는 것인 CMOS 박막 트랜지스터.
- 제 1항의 CMOS 박막 트랜지스터를 사용하는 것을 특징으로 하는 디스플레이 디바이스.
- 제 8항에 있어서,상기 디스플레이 디바이스는 액정 표시 소자 또는 유기 전계 발광 디스플레이 디바이스인 디스플레이 디바이스.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0037246A KR100521274B1 (ko) | 2003-06-10 | 2003-06-10 | 씨모스 박막 트랜지스터 및 이를 사용한 디스플레이디바이스 |
US10/756,393 US6894313B2 (en) | 2003-06-10 | 2004-01-14 | CMOS thin film transistor and display device using the same |
CNB200410004153XA CN1297008C (zh) | 2003-06-10 | 2004-02-13 | 薄膜晶体管及其制造方法和使用其的显示器件 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0037246A KR100521274B1 (ko) | 2003-06-10 | 2003-06-10 | 씨모스 박막 트랜지스터 및 이를 사용한 디스플레이디바이스 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040106060A true KR20040106060A (ko) | 2004-12-17 |
KR100521274B1 KR100521274B1 (ko) | 2005-10-12 |
Family
ID=33509649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2003-0037246A KR100521274B1 (ko) | 2003-06-10 | 2003-06-10 | 씨모스 박막 트랜지스터 및 이를 사용한 디스플레이디바이스 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6894313B2 (ko) |
KR (1) | KR100521274B1 (ko) |
CN (1) | CN1297008C (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100739985B1 (ko) * | 2006-09-04 | 2007-07-16 | 삼성에스디아이 주식회사 | 트랜지스터, 이의 제조 방법 및 이를 구비한 평판 표시장치 |
KR100878847B1 (ko) * | 2006-12-04 | 2009-01-15 | 한국전자통신연구원 | 박막트랜지스터를 이용한 cmos소자 및 그 제조방법 |
KR20190028382A (ko) * | 2016-07-20 | 2019-03-18 | 소니 주식회사 | 상보형 트랜지스터 및 반도체 장치 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060121514A (ko) * | 2005-05-24 | 2006-11-29 | 삼성전자주식회사 | 유기발광 디스플레이 및 그 제조방법 |
TWI316295B (en) | 2006-05-17 | 2009-10-21 | Au Optronics Corp | Thin film transistor |
TWI329232B (en) * | 2006-11-10 | 2010-08-21 | Au Optronics Corp | Pixel structure and fabrication method thereof |
JP4346636B2 (ja) * | 2006-11-16 | 2009-10-21 | 友達光電股▲ふん▼有限公司 | 液晶表示装置 |
TWI361492B (en) * | 2008-07-25 | 2012-04-01 | Au Optronics Corp | Thin film transistor substrate, electric apparatus, and method for fabricating the same |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5616935A (en) | 1994-02-08 | 1997-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor integrated circuit having N-channel and P-channel transistors |
US5615935A (en) | 1995-09-21 | 1997-04-01 | Robert Bosch Gmbh | ABS control for a four wheel drive vehicle experiencing axle oscillations |
TW322591B (ko) * | 1996-02-09 | 1997-12-11 | Handotai Energy Kenkyusho Kk | |
US6063654A (en) * | 1996-02-20 | 2000-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor involving laser treatment |
KR100338112B1 (ko) | 1999-12-22 | 2002-05-24 | 박종섭 | 반도체 소자의 구리 금속 배선 형성 방법 |
US6746901B2 (en) * | 2000-05-12 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating thereof |
KR100483985B1 (ko) * | 2001-11-27 | 2005-04-15 | 삼성에스디아이 주식회사 | 박막 트랜지스터용 다결정 실리콘 박막 및 이를 사용한디바이스 |
JP2003332350A (ja) * | 2002-05-17 | 2003-11-21 | Hitachi Ltd | 薄膜半導体装置 |
-
2003
- 2003-06-10 KR KR10-2003-0037246A patent/KR100521274B1/ko active IP Right Grant
-
2004
- 2004-01-14 US US10/756,393 patent/US6894313B2/en not_active Expired - Lifetime
- 2004-02-13 CN CNB200410004153XA patent/CN1297008C/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100739985B1 (ko) * | 2006-09-04 | 2007-07-16 | 삼성에스디아이 주식회사 | 트랜지스터, 이의 제조 방법 및 이를 구비한 평판 표시장치 |
KR100878847B1 (ko) * | 2006-12-04 | 2009-01-15 | 한국전자통신연구원 | 박막트랜지스터를 이용한 cmos소자 및 그 제조방법 |
KR20190028382A (ko) * | 2016-07-20 | 2019-03-18 | 소니 주식회사 | 상보형 트랜지스터 및 반도체 장치 |
US11887984B2 (en) | 2016-07-20 | 2024-01-30 | Sony Group Corporation | Complementary transistor and semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
US6894313B2 (en) | 2005-05-17 |
CN1574354A (zh) | 2005-02-02 |
KR100521274B1 (ko) | 2005-10-12 |
US20040251463A1 (en) | 2004-12-16 |
CN1297008C (zh) | 2007-01-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8987120B2 (en) | Flat panel display device comprising polysilicon thin film transistor and method of manufacturing the same | |
KR100691293B1 (ko) | 박막 반도체 디바이스 및 그 제조 방법 | |
WO2017070868A1 (zh) | N型tft的制作方法 | |
US8174053B2 (en) | Semiconductor device, production method thereof, and electronic device | |
WO2019200824A1 (zh) | Ltps tft基板的制作方法及ltps tft基板 | |
KR100521274B1 (ko) | 씨모스 박막 트랜지스터 및 이를 사용한 디스플레이디바이스 | |
US20050112807A1 (en) | Thin film transistor, method of fabricating the same and flat panel display using thin film transistor | |
KR20060062139A (ko) | 이중 열처리에 의한 다결정 박막트랜지스터 제조방법 | |
EP2881993B1 (en) | Poly-silicon tft, poly-silicon array substrate, methods for manufacturing same, and display device | |
JP2002134751A (ja) | アクティブマトリクス型表示装置およびその製造方法 | |
KR100542989B1 (ko) | 씨모스 박막 트래지스터 및 이를 사용한 디스플레이디바이스 | |
KR100521273B1 (ko) | 씨모스 박막 트래지스터 및 이를 사용한 디스플레이디바이스 | |
JP2005260168A (ja) | トランジスタを備えた装置およびその製造方法 | |
US7696029B2 (en) | Method for forming thin film devices for flat panel displays | |
KR100667066B1 (ko) | 박막트랜지스터 제조 방법 | |
KR100521275B1 (ko) | 씨모스 박막 트래지스터 및 이를 사용한 디스플레이디바이스 | |
US20050110090A1 (en) | Thin film transistor, method of fabricating the same, and flat panel display using the thin film transistor | |
US8759166B2 (en) | Method for manufacturing thin film transistor device | |
JP3325996B2 (ja) | 半導体装置作製方法 | |
KR100796606B1 (ko) | 박막트랜지스터의 제조방법 | |
KR100712213B1 (ko) | 박막트랜지스터 및 그의 제조방법 | |
KR101334177B1 (ko) | 박막 트랜지스터 및 그 제조 방법 | |
JP2004056025A (ja) | 薄膜トランジスタ装置およびその製造方法 | |
KR100488063B1 (ko) | 박막 트랜지스터 및 그 제조방법 | |
KR100590250B1 (ko) | 박막 트랜지스터, 이의 제조 방법 및 이를 이용한 평판표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120928 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20130930 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20141001 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20150930 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170928 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20181001 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20191001 Year of fee payment: 15 |