KR20040093725A - 기판 연마용 조성물 및 방법 - Google Patents

기판 연마용 조성물 및 방법 Download PDF

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Publication number
KR20040093725A
KR20040093725A KR10-2004-7013347A KR20047013347A KR20040093725A KR 20040093725 A KR20040093725 A KR 20040093725A KR 20047013347 A KR20047013347 A KR 20047013347A KR 20040093725 A KR20040093725 A KR 20040093725A
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KR
South Korea
Prior art keywords
acid
composition
volume
weight percent
combinations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR10-2004-7013347A
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English (en)
Korean (ko)
Inventor
펭 큐. 리우
스탄 디. 사이
용퀴 휴
슈 에스. 네오
얀 왕
알랭 두보우스트
리앙-유 첸
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20040093725A publication Critical patent/KR20040093725A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
    • B23H5/00—Combined machining
    • B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
    • B23H5/08—Electrolytic grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/20—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP]
    • H10P52/203—Electromechanical polishing [EMP]; Electrochemical mechanical polishing [ECMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR10-2004-7013347A 2002-02-26 2003-02-26 기판 연마용 조성물 및 방법 Ceased KR20040093725A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US35974602P 2002-02-26 2002-02-26
US60/359,746 2002-02-26
PCT/US2003/006058 WO2003072672A1 (en) 2002-02-26 2003-02-26 Method and composition for polishing a substrate

Publications (1)

Publication Number Publication Date
KR20040093725A true KR20040093725A (ko) 2004-11-08

Family

ID=27766131

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7013347A Ceased KR20040093725A (ko) 2002-02-26 2003-02-26 기판 연마용 조성물 및 방법

Country Status (6)

Country Link
EP (1) EP1478708A1 (https=)
JP (1) JP2005518670A (https=)
KR (1) KR20040093725A (https=)
CN (1) CN1646649A (https=)
TW (1) TWI307356B (https=)
WO (1) WO2003072672A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR101291761B1 (ko) * 2005-09-02 2013-07-31 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물

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US7220166B2 (en) 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7112121B2 (en) 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
US7153195B2 (en) 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7134934B2 (en) 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7078308B2 (en) 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US6899804B2 (en) 2001-04-10 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7582564B2 (en) 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US7323416B2 (en) 2001-03-14 2008-01-29 Applied Materials, Inc. Method and composition for polishing a substrate
US7160432B2 (en) 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US7390429B2 (en) 2003-06-06 2008-06-24 Applied Materials, Inc. Method and composition for electrochemical mechanical polishing processing
US7112122B2 (en) 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
TWI288046B (en) * 2003-11-14 2007-10-11 Showa Denko Kk Polishing composition and polishing method
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
US7125324B2 (en) * 2004-03-09 2006-10-24 3M Innovative Properties Company Insulated pad conditioner and method of using same
US20050263407A1 (en) * 2004-05-28 2005-12-01 Cabot Microelectronics Corporation Electrochemical-mechanical polishing composition and method for using the same
US7247567B2 (en) 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US7582127B2 (en) 2004-06-16 2009-09-01 Cabot Microelectronics Corporation Polishing composition for a tungsten-containing substrate
US7566391B2 (en) 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
US20060118760A1 (en) * 2004-12-03 2006-06-08 Yang Andy C Slurry composition and methods for chemical mechanical polishing
US20060163083A1 (en) * 2005-01-21 2006-07-27 International Business Machines Corporation Method and composition for electro-chemical-mechanical polishing
KR100772929B1 (ko) 2005-10-18 2007-11-02 테크노세미켐 주식회사 구리 다마신 공정용 화학-기계적 연마 슬러리 조성물
FI120793B (fi) * 2006-01-25 2010-03-15 Coefa Company Ltd Oy Menetelmä tykin putken puhdistamiseksi
US20070227902A1 (en) * 2006-03-29 2007-10-04 Applied Materials, Inc. Removal profile tuning by adjusting conditioning sweep profile on a conductive pad
US7998866B2 (en) * 2006-09-05 2011-08-16 Cabot Microelectronics Corporation Silicon carbide polishing method utilizing water-soluble oxidizers
US8110508B2 (en) 2007-11-22 2012-02-07 Samsung Electronics Co., Ltd. Method of forming a bump structure using an etching composition for an under bump metallurgy layer
CN102403212B (zh) * 2010-09-17 2014-12-10 长兴开发科技股份有限公司 硅通孔晶片的抛光方法和用于该方法的抛光组合物
TWI575040B (zh) * 2011-03-18 2017-03-21 長興開發科技股份有限公司 可用於拋光矽通孔晶圓之拋光組成物及其用途
CN104023889B (zh) * 2011-12-06 2017-04-12 国立大学法人大阪大学 固体氧化物的加工方法及其装置
CN102634840B (zh) * 2012-05-02 2014-08-13 浙江大学 锆合金的电化学抛光电解液及其电化学抛光方法
US8961807B2 (en) * 2013-03-15 2015-02-24 Cabot Microelectronics Corporation CMP compositions with low solids content and methods related thereto
US10059860B2 (en) * 2014-02-26 2018-08-28 Fujimi Incorporated Polishing composition
US9914852B2 (en) * 2014-08-19 2018-03-13 Fujifilm Planar Solutions, LLC Reduction in large particle counts in polishing slurries
CN104404611B (zh) * 2014-11-28 2016-11-30 江门市瑞期精细化学工程有限公司 一种铜合金表面镀层的电解剥离剂及其制备方法
CN105273638B (zh) * 2015-10-14 2017-08-29 盐城工学院 氧化镓晶片抗解理悬浮研磨液及其制备方法
US10106705B1 (en) * 2017-03-29 2018-10-23 Fujifilm Planar Solutions, LLC Polishing compositions and methods of use thereof
CN109648165A (zh) * 2018-12-13 2019-04-19 大连理工大学 一种铜微细电解射流加工的电解液及其配制和使用方法
JP7527314B2 (ja) * 2019-06-13 2024-08-02 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド エッチング組成物
CN110524408A (zh) * 2019-09-12 2019-12-03 江苏吉星新材料有限公司 一种蓝宝石晶片研磨方法
WO2022205656A1 (zh) * 2021-03-29 2022-10-06 中国电子科技集团公司第十三研究所 一种磷化铟衬底的抛光装置及抛光工艺
CN113201285A (zh) * 2021-04-29 2021-08-03 安徽应友光电科技有限公司 一种cvd设备背板精密研磨液、制备工艺及加工方法
CN114481286A (zh) * 2021-12-28 2022-05-13 广东省科学院化工研究所 一种用于电解抛光的固体颗粒物
CN116214277A (zh) * 2023-02-07 2023-06-06 西安交通大学 一种大口径半导体晶圆电化学机械减薄加工方法及设备
CN120958560A (zh) * 2023-03-30 2025-11-14 福吉米株式会社 研磨用组合物
WO2024203917A1 (ja) * 2023-03-30 2024-10-03 株式会社フジミインコーポレーテッド 研磨用組成物

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US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
DE69734868T2 (de) * 1996-07-25 2006-08-03 Dupont Air Products Nanomaterials L.L.C., Tempe Zusammensetzung und verfahren zum chemisch-mechanischen polieren
KR20010042616A (ko) * 1998-04-10 2001-05-25 페로 코포레이션 금속 표면의 화학적-기계적 연마용 슬러리
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6379223B1 (en) * 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
WO2001077241A2 (en) * 2000-04-05 2001-10-18 Applied Materials, Inc. Composition for metal cmp with low dishing and overpolish insensitivity

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101291761B1 (ko) * 2005-09-02 2013-07-31 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물

Also Published As

Publication number Publication date
JP2005518670A (ja) 2005-06-23
CN1646649A (zh) 2005-07-27
TW200416271A (en) 2004-09-01
WO2003072672A1 (en) 2003-09-04
TWI307356B (en) 2009-03-11
EP1478708A1 (en) 2004-11-24

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