KR20040090575A - 고전압 소자 및 그의 제조 방법 - Google Patents
고전압 소자 및 그의 제조 방법 Download PDFInfo
- Publication number
- KR20040090575A KR20040090575A KR1020030024452A KR20030024452A KR20040090575A KR 20040090575 A KR20040090575 A KR 20040090575A KR 1020030024452 A KR1020030024452 A KR 1020030024452A KR 20030024452 A KR20030024452 A KR 20030024452A KR 20040090575 A KR20040090575 A KR 20040090575A
- Authority
- KR
- South Korea
- Prior art keywords
- gate
- high voltage
- active wafer
- voltage device
- forming
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82345—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823456—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (6)
- 액티브 웨이퍼 상부에 이중의 환형 구조로 형성되는 제 1 및 제 2 게이트와,상기 제 1 게이트의 에지부 하단의 액티브 웨이퍼에 형성된 드레인과,상기 제 2 게이트의 내측에 형성된 소오스와,상기 소오스, 드레인 및 게이트 각각에 관통하여 형성된 콘택홀을 포함하는 것을 특징으로 하는 고전압 소자.
- 액티브 웨이퍼에 웰을 형성하는 단계와,상기 액티브 웨이퍼 상에 버퍼산화막을 형성한 후 문턱 전압 조절용 이온 주입 공정을 진행하는 단계와,상기 버퍼산화막 상부에 게이트 산화막을 형성한 후 게이트 폴리실리콘을 증착하는 단계와,상기 게이트 폴리실리콘에 소정의 사진 및 식각 공정을 진행하여 제 1 게이트 및 제 2 게이트의 이중 환형 구조로 게이트 전극을 형성하는 단계와,상기 액티브 웨이퍼에 이온 주입 공정을 진행하여 저농도 임플란트 공정을 진행하는 단계와,상기 이중 환형 구조의 게이트에 스페이서를 형성한 후 고농도 임플란트 공정을 진행하는 단계를포함하는 것을 특징으로 하는 고전압 소자의 제조 방법.
- 제 2항에 있어서,상기 웰 형성 공정은 11B+ 이온을 이용하여 80keV의 에너지하에서 2.0E12의 도즈량으로 실시하는 것을 특징으로 하는 고전압 소자의 제조 방법.
- 제 2항에 있어서,상기 저농도 임플란트 공정은 31P+ 이온을 이용하여 170keV의 에너지하에서 1.0E13의 도즈량으로 실시하는 것을 특징으로 하는 고전압 소자의 제조 방법.
- 제 2항에 있어서,상기 저농도 임플란트 공정은 불순물 영역의 깊이와 확산 면적을 확보하기 위해 30°의 틸트를 주어 4회전 회전시키면서 실시하는 것을 특징으로 하는 고전압 소자의 제조 방법
- 제 2항에 있어서,상기 고농도 n형 임플란트 공정은 75AS+ 이온을 이용하여 120keV의 에너지 하에서 7.5E15의 도즈량으로 실시하는 것을 특징으로 하는 고전압 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030024452A KR100975971B1 (ko) | 2003-04-17 | 2003-04-17 | 고전압 소자 및 그의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030024452A KR100975971B1 (ko) | 2003-04-17 | 2003-04-17 | 고전압 소자 및 그의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040090575A true KR20040090575A (ko) | 2004-10-26 |
KR100975971B1 KR100975971B1 (ko) | 2010-08-13 |
Family
ID=37371605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030024452A KR100975971B1 (ko) | 2003-04-17 | 2003-04-17 | 고전압 소자 및 그의 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100975971B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8610208B2 (en) | 2010-08-11 | 2013-12-17 | Samsung Electronics Co., Ltd. | Semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02250378A (ja) * | 1989-03-24 | 1990-10-08 | Hitachi Ltd | 半導体素子 |
US5668392A (en) * | 1996-10-28 | 1997-09-16 | National Semiconductor Corporation | Low capacitance and low Vt annular MOSFET design for phase lock loop applications |
KR200308025Y1 (ko) * | 1998-11-13 | 2003-06-18 | 주식회사 하이닉스반도체 | 반도체장치의 정전방전입력보호회로의 레이아웃 |
KR100401495B1 (ko) * | 2000-12-28 | 2003-10-17 | 주식회사 하이닉스반도체 | 반도체 소자의 트랜지스터 제조방법 |
-
2003
- 2003-04-17 KR KR1020030024452A patent/KR100975971B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8610208B2 (en) | 2010-08-11 | 2013-12-17 | Samsung Electronics Co., Ltd. | Semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
KR100975971B1 (ko) | 2010-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100867574B1 (ko) | 고전압 디바이스 및 그 제조방법 | |
US20060011985A1 (en) | Asymmetric hetero-doped high-voltage MOSFET (AH2MOS) | |
US5945726A (en) | Lateral bipolar transistor | |
JP2008514007A (ja) | スタック状ヘテロドーピング周縁部及び徐々に変化するドリフト領域を備えた促進された表面電界低減化高耐圧p型mosデバイス | |
JP5762687B2 (ja) | 所望のドーパント濃度を実現するためのイオン注入法 | |
WO2004053939A2 (en) | Integrated circuit structure with improved ldmos design | |
US7196375B2 (en) | High-voltage MOS transistor | |
KR100611111B1 (ko) | 고주파용 모오스 트랜지스터, 이의 형성 방법 및 반도체장치의 제조 방법 | |
KR100425230B1 (ko) | 반도체 장치와 그 제조 방법 | |
JP2014099580A (ja) | 半導体装置および半導体装置の製造方法 | |
US4970173A (en) | Method of making high voltage vertical field effect transistor with improved safe operating area | |
JP4030269B2 (ja) | 半導体装置とその製造方法 | |
US5623154A (en) | Semiconductor device having triple diffusion | |
KR101530579B1 (ko) | 반도체 소자 및 이의 제조 방법 | |
US6713331B2 (en) | Semiconductor device manufacturing using one element separation film | |
JP2011211078A (ja) | 半導体装置及びその製造方法 | |
KR100947567B1 (ko) | 고전압 소자 및 그 제조 방법 | |
KR100975971B1 (ko) | 고전압 소자 및 그의 제조 방법 | |
KR100464379B1 (ko) | 전력 모스 트랜지스터를 갖는 반도체소자의 제조방법 | |
KR100587605B1 (ko) | 고전압 트랜지스터 및 그 제조방법 | |
KR100935249B1 (ko) | 고전압 소자 및 그의 제조 방법 | |
JP3768198B2 (ja) | 半導体装置 | |
KR100935248B1 (ko) | Dmos 트랜지스터 및 그 제조 방법 | |
KR100310173B1 (ko) | 엘디디형 상보형 모스 트랜지스터 제조 방법 | |
KR100347536B1 (ko) | 플래쉬 메모리 소자의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E90F | Notification of reason for final refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130730 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20150716 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160718 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170719 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180717 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20190716 Year of fee payment: 10 |