KR20040025471A - 반투과형 횡전계모드 액정표시소자 - Google Patents
반투과형 횡전계모드 액정표시소자 Download PDFInfo
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- KR20040025471A KR20040025471A KR1020020057448A KR20020057448A KR20040025471A KR 20040025471 A KR20040025471 A KR 20040025471A KR 1020020057448 A KR1020020057448 A KR 1020020057448A KR 20020057448 A KR20020057448 A KR 20020057448A KR 20040025471 A KR20040025471 A KR 20040025471A
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- South Korea
- Prior art keywords
- liquid crystal
- crystal display
- display device
- electric field
- transverse electric
- Prior art date
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 97
- 230000005684 electric field Effects 0.000 claims abstract description 46
- 230000005540 biological transmission Effects 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
- G02F1/133555—Transflectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/09—Function characteristic transflective
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (16)
- 복수의 화소를 정의하는 복수의 게이트라인 및 데이터라인;각 화소내에 배치된 구동소자;상기 화소내에 형성되며, 적어도 한쌍의 제1전극이 배치되어 제1횡전계를 형성하는 투과부; 및상기 화소내에 형성되어 외부광원으로부터 입사되는 광을 반사하며, 적어도 한쌍의 제2전극이 배치되어 제2횡전계를 형성하는 반사부로 구성된 반투과형 횡전계모드 액정표시소자.
- 제1항에 있어서, 상기 구동소자는 박막트랜지스터인 것을 특징으로 반투과형 횡전계모드 액정표시소자.
- 제2항에 있어서, 상기 박막트랜지스터는,기판위에 형성된 게이트전극;상기 게이트전극이 형성된 기판 전체에 걸쳐 적층된 절연층;상기 절연층 위에 형성된 반도체층;상기 반도체층 위에 형성된 소스전극 및 드레인전극; 및상기 소스전극 및 드레인전극이 형성된 기판 전체에 걸쳐 적층된 보호층으로 이루어진 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제3항에 있어서, 상기 보호층은 유기보호층인 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제3항에 있어서, 상기 투과부에는 상기 절연층 또는 절연층/보호층이 제거된 적어도 하나의 홈이 형성된 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제5항에 있어서, 상기 홈은 경사면을 보유하는 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제6항에 있어서, 상기 제1전극은 홈의 경사면에 형성되는 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제3항에 있어서, 상기 반사부의 절연층 위에 형성된 금속층을 추가로 포함하는 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제3항에 있어서, 상기 제2전극은 보호층 위에 형성되는 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제9항에 있어서, 상기 제2전극은 제1전극과 일체로 형성되는 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제1항에 있어서, 상기 투과부의 셀갭은 반사부의 셀갭의 2배인 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제1항에 있어서, 상기 투과부의 폭(A)과 반사부의 폭(B)의 비(A:B)는 1:1∼3:1인 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제12항에 있어서, 상기 투과부의 폭(A)과 반사부의 폭(B)의 비(A:B)는 2:1인 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 복수의 화소를 정의하는 복수의 게이트라인 및 데이터라인;각 화소내에 배치된 구동소자; 및상기 화소내에 형성되어 횡전계를 생성하는 전극으로 구성되며,상기 화소내에는 외부로부터 입사되는 광을 반사하는 금속층이 형성되어, 외부광원이 존재하는 경우에는 반사모드로 작동하고 외부광원이 존재하지 않는 경우에는 투과모드로 작동하는 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제14항에 있어서, 상기 전극은,적어도 한쌍의 투과모드전극; 및적어도 한쌍의 반사모드전극으로 이루어진 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
- 제14항에 있어서, 상기 투과모드전극 사이의 간격(A)과 반사모드전극 사이의 간격(B)의 비(A:B)는 1:1∼3:1인 것을 특징으로 하는 반투과형 횡전계모드 액정표시소자.
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KR1020020057448A KR100870667B1 (ko) | 2002-09-19 | 2002-09-19 | 반투과형 횡전계모드 액정표시소자 |
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KR1020020057448A KR100870667B1 (ko) | 2002-09-19 | 2002-09-19 | 반투과형 횡전계모드 액정표시소자 |
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KR20040025471A true KR20040025471A (ko) | 2004-03-24 |
KR100870667B1 KR100870667B1 (ko) | 2008-11-26 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100863322B1 (ko) * | 2006-05-22 | 2008-10-15 | 미쓰비시덴키 가부시키가이샤 | 액정표시장치 및 그 제조 방법 |
KR100886926B1 (ko) * | 2006-02-01 | 2009-03-09 | 가부시키가이샤 히타치 디스프레이즈 | 반투과형 액정표시장치 |
KR101332108B1 (ko) * | 2006-12-21 | 2013-11-21 | 엘지디스플레이 주식회사 | 반투과형 액정패널 및 그의 제조 방법 |
KR101358221B1 (ko) * | 2007-05-31 | 2014-02-05 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치 및 그 제조방법 |
CN105116586A (zh) * | 2015-09-21 | 2015-12-02 | 深圳市华星光电技术有限公司 | 一种半透反式蓝相液晶显示器及其液晶显示模组 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100658062B1 (ko) * | 2000-06-30 | 2006-12-15 | 비오이 하이디스 테크놀로지 주식회사 | 반투과형 액정표시장치 |
KR20020015228A (ko) * | 2000-08-21 | 2002-02-27 | 구본준, 론 위라하디락사 | 반사투과형 액정표시장치용 어레이기판과 그 제조방법 |
KR100824015B1 (ko) * | 2001-02-19 | 2008-04-21 | 엘지.필립스 엘시디 주식회사 | 반투과 액정 표시 장치 |
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2002
- 2002-09-19 KR KR1020020057448A patent/KR100870667B1/ko active IP Right Grant
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100886926B1 (ko) * | 2006-02-01 | 2009-03-09 | 가부시키가이샤 히타치 디스프레이즈 | 반투과형 액정표시장치 |
US7982832B2 (en) | 2006-02-01 | 2011-07-19 | Hitachi Displays, Ltd. | Transflective liquid crystal display device |
US8040448B2 (en) | 2006-02-01 | 2011-10-18 | Hitachi Displays, Ltd. | Transflective liquid crystal display device |
US8149345B2 (en) | 2006-02-01 | 2012-04-03 | Hitachi Displays, Ltd. | Transflective liquid crystal display device |
KR100863322B1 (ko) * | 2006-05-22 | 2008-10-15 | 미쓰비시덴키 가부시키가이샤 | 액정표시장치 및 그 제조 방법 |
KR101332108B1 (ko) * | 2006-12-21 | 2013-11-21 | 엘지디스플레이 주식회사 | 반투과형 액정패널 및 그의 제조 방법 |
KR101358221B1 (ko) * | 2007-05-31 | 2014-02-05 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시장치 및 그 제조방법 |
CN105116586A (zh) * | 2015-09-21 | 2015-12-02 | 深圳市华星光电技术有限公司 | 一种半透反式蓝相液晶显示器及其液晶显示模组 |
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Publication number | Publication date |
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KR100870667B1 (ko) | 2008-11-26 |
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