KR20040011728A - Duplexer chip package and methode for manufacturing duplexer chip package - Google Patents

Abstract

PURPOSE: A duplexer chip package and a fabricating method thereof are provided to simplify a structure by forming a duplexer circuit within one package. CONSTITUTION: A duplexer chip package includes the first and the second filters(21a,21b), a ground pattern(23), an inductor substrate(25), a capacitor substrate(26), a phase shifter substrate(27), and a ground substrate. The first and the second filters(21a,21b) are used for separating a transmitting signal and a receiving signal of a dual frequency band. The ground pattern(23) is used as a grounding portion for the first and the second filters(21a,21b). The inductor substrate(25) is formed on the ground pattern. The capacitor substrate(26) is formed at a bottom side of the inductor substrate by using a plurality of capacitors. The phase shifter substrate(27) is formed at the bottom side of the inductor substrate by an inductor used as a diplexer. The ground substrate is formed at a bottom of the phase shifter substrate.

Description

DUPLEXER CHIP PACKAGE AND METHODE FOR MANUFACTURING DUPLEXER CHIP PACKAGE}

The present invention relates to a dual band duplexer chip, and more specifically, a duplexer chip package that can implement a duplexer chip that transmits and receives two frequency band signals in one package according to a low temperature co-fired ceramic (LTCC) process. And to a method for producing the same.

Background Art In recent years, with the development of mobile communication systems, mobile communication devices such as mobile phones and portable information terminals are rapidly spreading, and the demand for miniaturization and high performance of these devices has been required to reduce the size and performance of components used therein. In addition, two types of wireless communication systems, analog and digital, are used in mobile telephones, and the frequencies used for wireless communication are in the 800 MHz to 1 GHz band and the 1.5 GHz to 2.0 GHz band.

In particular, SAW filters are widely used as band pass filters in communication devices and other electronic devices. SAW filters include a lateral SAW filter having two interdigital transducers (IDTs) arranged at a predetermined distance on a piezoelectric substrate, and a SAW resonator filter constituting a resonator on a piezoelectric substrate.

As SAW resonator filters, a single-sided reflection SAW resonator filter is known that uses shear horizontal surface acoustic waves such as love waves, Bleustein-Gulyaev-Shimuzu (BBS) waves, and other similar waves.

Recently, a duplexer is manufactured and used as a chip so that when a signal is transmitted and received by a communication device, only a predetermined band frequency of the signal is filtered or transmitted, or a signal of a predetermined frequency band is received when the signal is received.

In addition, a film bulk acoustic resonator (FBAR) has been developed, which is a mobile communication component. The FBAR filter extracts only a specific frequency in the process of receiving high frequencies of 1 to 15 kHz, removes noise, and improves sound quality. It is a next-generation filter that is smaller and lighter than 1 / 10th to 100th in size compared to the existing surface acoustic wave (SAW) filter and ceramic filter by using thin film by sputtering process of semiconductor. This is a complementary metal oxide semiconductor (CMOS) process is evaluated as a technology capable of single-chip high-frequency integrated circuit (MMIC) of the RF stage of wireless communication.

In the above description, the saw-duplexer is used for an intermediate frequency filter of an image and a time delay of a signal in a television. An input converter for converting and an opposing shape are formed, and an output converter for converting mechanical vibration into an electrical signal and outputting it to a load is formed. The input converter and the output converter have a comb-shaped aluminum electrode spaced apart from each other by a predetermined distance. have.

In addition, the saw filter and the FBAR filter have been manufactured in the form of an integrated package with circuit elements formed on a ceramic laminate substrate by a technique called low temperature co-fired ceramic (LTCC). .

LTCC is usually manufactured by making a board as a substrate and coating a metal on the circuit, but this method has difficulty in integration and miniaturization.

Therefore, when the LTCC is used, since it is a co-fire process technology in which a metal and its ceramic substrate are simultaneously made at low temperature, integration and miniaturization can be achieved.

Glass-based or mixed ceramic-based substrates can be pressed and fired to metal-clad substrates at around 800 ~ 1000 ℃ and are well suited for high-frequency passive device fabrication.

1 is a block diagram illustrating a dual band duplexer according to the prior art.

As shown in FIG. 1, a duplexer for transmitting / receiving a dual band frequency signal includes a PCS that transmits and receives a data signal using a frequency band of 1800 MHz or more, and a data signal using a frequency band of 900 MHz or less. The AMPS (Advanced Mobile Phone Service) to transmit and receive is formed in the same front end module (FEM).

An antenna 1 for transmitting and receiving high frequency signals of different frequency bands, a diplexer 3 for filtering signals of different frequency bands transmitted and received from the antenna 1, and a separation from the diplexer 3 PCS transmission and reception terminal using a 1800MHz band frequency signal to be separated from the diplexer (3) and AMPS transmission and reception terminal using a 900MHz band frequency signal is disposed.

The third filter 6a is disposed at the PCS transmitting terminal Tx, and the type of filter is usually a saw filter or a FBAR filter, and the fourth filter 6d and the second phase are used for the PCS receiving terminal Rx. The shifter 3b is arranged, and the type of filter is similarly used as the saw filter or the FBAR filter.

The AMPS transmission terminal Tx is provided with a first filter 5a. The type of filter is usually a saw filter or a FBAR filter, and the AMPS receiving terminal Rx has a second filter 5b and a first phase. The shifter 3a is arranged, and the type of the filter is similarly used as the saw filter or the FBAR filter.

When the duplexer having the structure as described above is applied with a 900 MHz frequency signal generated inside the system through the AMPS transmission terminal Tx, the diplexer is filtered around the band width through the first filter 5a. The signal is transmitted to the outside through the antenna 1 while passing through the low pass filter region of (3).

A frequency signal of a 900 MHz band is externally received from the antenna 1 through the same path, and then applied to the AMPS receiving terminal Rx through the diplexer 3, and the first phase shifter 3a and the first phase shifter 3a. The signal is received into the system through the second filter 5b.

In addition, when the frequency signal of the 1800 MHz band generated inside the system is applied through the PCS transmission terminal (Tx), the filter is filtered around the band width through the third filter (6a) of the diplexer (3) The signal is transmitted to the outside through the antenna 1 while passing through a low pass filter region.

A frequency signal of 1800 MHz band is externally received from the antenna 1 through the same path, and then applied to the PCS receiving terminal Rx through the diplexer 3, and the second phase shifter 3b A signal is received into the system through the fourth filter 6b.

As described above, a duplexer for transmitting and receiving frequency signals of two bands is manufactured by separating the two chips according to the LTCC manufacturing process. That is, the first filter 5a, the second filter 5b, and the first phase shifter 3a connected to the AMPS transceiver terminals having a 900 MHz frequency band are manufactured in one chip package according to the LTCC process.

The third filter 6a, the fourth filter 6b, and the second phase shifter 3b connected to the PCS transmission / reception terminal having the 1800 MHz frequency band are manufactured in one chip package according to the LTCC process.

The two chip packages are electrically contacted and connected to the diplexer 3 to manufacture a duplexer for transmitting and receiving.

However, in recent years, the size of CDMA-based communication devices is becoming smaller and lighter. In the dual band duplexer, if the transmit / receive filters and phase shifters corresponding to the frequency bands are manufactured as separate stacked chips, they are bulky. There is a growing problem.

The present invention provides a duplexer chip package and a method for manufacturing the dual band duplexer used in a communication transceiver, which can be miniaturized and lightened by implementing the circuit in a single chip package. The purpose is to provide.

1 is a block diagram illustrating a dual band duplexer according to the prior art.

2 is a duplexer block diagram implemented in accordance with the present invention.

3A to 3C are views for explaining a duplexer chip manufacturing process according to the present invention.

4 illustrates a connection terminal of a duplexer chip according to the present invention.

* Description of the symbols for the main parts of the drawings *

21a: AMPS transmit / receive filter 21b: PCS transmit / receive filter

23: ground pattern 25: inductor substrate

26: capacitor substrate 27: phase shifter substrate

30: foot pad 31: first contact line

32: second contact line 100: duplexer chip

In order to achieve the above object, the duplexer chip package according to the present invention,

A first filter and a second filter for separating transmission and reception signals of a dual band frequency band in a mobile communication device;

A ground pattern patterned for grounding the first filter and the second filter;

An inductor substrate formed in the ground pattern and having inductors used in the diplexer;

A capacitor substrate having capacitors used in a diplexer under the inductor substrate;

A phase shifter substrate implemented by an inductor used in a diplexer under the capacitor substrate; And

And a ground substrate disposed under the phase shifter substrate to ground ground terminals of the stacked substrates.

Here, a ground is disposed on each of the inductor substrate, the capacitor substrate, and the phase shifter substrate, and a first contact line is provided for electrical contact between the first filter, the second filter terminal, the inductor substrate, the capacitor substrate, and the phase shifter substrate. And a second contact line are arranged.

In addition, the first filter and the second filter is a saw filter or FBAR filter, the first filter is composed of filters that can filter the transmission and reception frequency signals of 1000MHz or less, respectively, and the second filter is 1000MHz or more transmission and reception It is characterized by consisting of filters that can filter each of the frequency signal.

In addition, the duplexer chip manufacturing method according to another embodiment of the present invention,

Forming ceramic substrates using a LTCC process, a ground substrate, a phase shifter substrate, a capacitor substrate, and an inductor substrate, respectively;

Stacking the results to electrically contact the stacked upper and lower substrates through via holes formed on respective substrates;

Mounting a first filter and a second filter on an inductor substrate positioned above the stacked substrates;

Wire bonding terminals of the first and second filters to form electrical contacts with the stacked substrates; and

And a foot pad forming step of connecting the stacked substrate and the input / output terminals and the ground terminals of the filters.

Here, a circuit pattern is formed on an inductance substrate so as to correspond to terminals of the first filter and the second filter, and a ground pattern is formed on the inductance substrate, the capacitor substrate, the phase shifter substrate, and the ground substrate, respectively, for signal independence. The via inductance substrate, the capacitor substrate, the phase shifter substrate, and the ground substrates may be formed with a via hole for electrical contact between the upper and lower substrates, and then a metal pattern may be formed inside the via hole.

According to the present invention, there is an advantage that can be miniaturized by implementing a diplexer, a filter, a saw, and a FBAR filter of a duplexer used in the transmission and reception module in one package.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a block diagram of a duplexer implemented according to the present invention.

As shown in FIG. 2, a structure of a front end module (FEM) in which PCS transmits and receives data signals using a frequency band of 1800 MHz and AMPS transmits and receives data signals using a frequency band of 900 MHz are implemented as an inductor and a capacitor. to be.

A diplexer 18 for filtering the frequency signal transmitted and received from the antenna 11 is formed of inductors LD1, LP1, LP2 and capacitors CD1, CD2, CD3, CP1, CP2.

Since the diplexer 18 should be able to filter two different frequency bands, the diplexer 18 includes a low pass filter and a high pass filter.

A first filter 15a, a second filter 15b, and a first phase shifter 13a are disposed at AMPS transceiver terminals Tx and Rx each having a frequency of 1000 MHz or less (900 MHz), and 1000 MHz or more (1800 MHz). The third filter 16a, the fourth filter 16b, and the second phase shifter 13b are respectively disposed at the PCS transmission / reception terminal Tx.

3A to 3C are diagrams for describing a duplexer chip manufacturing process according to the present invention.

As shown in FIG. 3A, a phase shifter substrate 27 in which an inductor and a capacitor are formed for a phase shift using an LTCC process, an inductor substrate 25 and a diplexer in which an inductor is used for a diplexer. A capacitor substrate 26 having a capacitor used is manufactured.

A ground pattern 23 is formed on the inductor substrate 25, and as shown in FIG. 2, inductors LD1, LP1, LP2 used in the diplexer are formed, and a die is formed on the capacitor substrate 26. The capacitors, CD1, CD2, CD3, CP1, CP2, which are used for the flexure, are formed.

LD2 and LP3 are formed on the phase shifter substrate 27 stacked below the capacitor substrate 26 to shift the signal phase. A power stage capacitor substrate 28 having capacitors formed thereon is stacked below the phase shifter substrate 27.

In this case, via holes are formed in the terminals formed on the stacked inductor substrate 25, the capacitor substrate 26, and the phase shifter substrate 27, and a conductive metal pattern is formed in the via holes, thereby forming a ceramic substrate. When stacked, elements formed on the substrate are electrically connected.

When the inductor substrate 25, the capacitor substrate 26, the phase shifter substrate 27, and the power terminal capacitor substrate 28 are stacked, a foot pad 30 to which ground terminals are connected to the outside is stacked. It is formed around the field.

Then, as shown in FIG. 3B, the two filters 21a and 21b used in the duplexer are combined on the inductor substrate 25 of the stacked substrates on which the foot pad 30 is formed. The filter used in the duplexer may be a saw filter or FBAR filter, the AMPS transceiver filter of 900MHz band is combined into one chip, and the PCS transceiver filter of 1800MHz band is combined into one chip in the adjacent area.

When the AMPS transmit / receive filter 21a and the PCS transmit / receive filter 21b are coupled, a ground terminal is connected to the foot pad 30 by a wire bonding process, and a via hole is formed therein for electrical contact with the stacked substrates. It is connected to the 1st contact line 31 and the 2nd contact line 32, respectively.

It is then encapsulated by a metal cover to protect the internal elements and the wire bonding area of the duplexer chip package.

As illustrated in FIG. 3C, when ceramic substrates are stacked and filters according to frequency bands are combined, a duplexer for transmitting and receiving is implemented in one ceramic stacked package.

When the ceramic substrates having the inductors and capacitors are formed by the LTCC process, the inductor substrate 25, the capacitor substrate 26, the phase shifter substrate 27, and the power terminal capacitor substrate 28 are integrally stacked to form a package. .

When the AMPS transmit / receive filter 21a and the PCS transmit / receive filter 21b are coupled on the inductor substrate 25, a ground pattern 23 is disposed to connect the ground terminals of the filters and the input / output terminals.

In addition, the inductor substrate 25, the capacitor substrate 26, the phase shifter substrate 27, and the ground substrates 28 each have the ground pattern 25 connected to the foot pad 30. This is to ensure that signals processed on the substrate do not affect adjacent ceramic substrates. In addition, insertion loss between terminals can be prevented.

The AMPS transmit / receive filter 21a and the PCS transmit / receive filter 21b coupled to the chip package of the duplexer have an advantage of facilitating electrical connection with a transmission and reception system by arranging terminals so as to be symmetrical with each other.

4 is a diagram illustrating a connection terminal of a duplexer chip according to the present invention.

As shown in FIG. 4, the terminals of the duplexer chip package have terminals AMPS (Tx) and AMPS (Rx) for transmitting and receiving a frequency signal of 1000 MHz or less at the top centered on the ground terminals on the left and right sides, and the ground of the ceramic substrates. The terminal and the antenna terminal are formed.

PCS (Tx), PCS (Rx) and ground terminals for transmitting and receiving frequency signals of 1000 MHz or more (1800 MHz) are formed at the lower portion of the ground terminal.

Therefore, since the duplexer for transmitting and receiving is used as a single chip package in the system, it is possible to reduce the size of the communication device and to secure space when combining components.

As described in detail above, the present invention implements the duplexer circuit used in the transmission and reception module, and it is possible to reduce the light weight by implementing all on one package by the LTCC process.

The present invention is not limited to the above-described embodiments, and various changes can be made by those skilled in the art without departing from the gist of the present invention as claimed in the following claims.

Claims (10)

A first filter and a second filter for separating transmission and reception signals of a dual band frequency band in a mobile communication device; A ground pattern patterned for grounding the first filter and the second filter; An inductor substrate formed in the ground pattern and having inductors used in the diplexer; A capacitor substrate having capacitors used in a diplexer under the inductor substrate; A phase shifter substrate implemented by an inductor used in a diplexer under the capacitor substrate; And And a ground substrate disposed under the phase shifter substrate to ground ground terminals of the stacked substrates. The method of claim 1, And a ground disposed on the inductor substrate, the capacitor substrate, and the phase shifter substrate, respectively. The method of claim 1, And a first contact line and a second contact line for electrical contact between the first filter, the second filter terminal, the inductor substrate, the capacitor substrate, and the phase shifter substrate. The method of claim 1, The first filter and the second filter is a duplexer chip package, characterized in that the saw filter or FBAR filter. The method of claim 1, The first filter is a duplexer chip package, characterized in that consisting of filters for filtering the transmission and reception frequency signals of less than 1000MHz. The method of claim 1, The second filter is a duplexer chip package, characterized in that consisting of filters for filtering the transmission and reception frequency signals of 1000MHz or more. Forming ceramic substrates using a LTCC process, respectively, a ground substrate, a phase shifter substrate, a capacitor substrate, and an inductor substrate; Stacking the results to electrically contact the stacked upper and lower substrates through via holes formed on respective substrates; Mounting a first filter and a second filter on an inductor substrate positioned above the stacked substrates; Wire bonding terminals of the first and second filters to form an electrical bottom contact with the stacked substrates; and And a foot pad forming step of connecting the stacked substrate and the input / output terminals and the ground terminals of the filters. The method of claim 7, wherein And a circuit pattern formed on an inductance substrate so as to correspond to terminals of the first filter and the second filter. The method of claim 7, wherein And forming a ground pattern on the inductance substrate, the capacitor substrate, the phase shifter substrate, and the ground substrate for signal independence, respectively. The method of claim 7, wherein And forming a via hole on the stacked inductance substrate, the capacitor substrate, the phase shifter substrate, and the ground substrates for electrical contact between the upper and lower substrates, and then forming a metal pattern inside the via hole.