KR100993087B1 - Front-end module and method for manufacturing of front-end module - Google Patents

Abstract

The present invention discloses a method of manufacturing a front end module capable of improving device characteristics by forming a device having a predetermined dimension by inserting a predetermined groove or punching into a substrate and filling a metal when forming devices used in a high frequency transmission / reception module. . The disclosed invention includes the steps of punching lines in the form of elements on substrates to form elements used in phase shifts, switches and filters constituting a transmit / receive module; Depositing a metal film on the punched lines of the respective substrates to fill the metal into the punched lines to pattern the device lines; And stacking a plurality of metal-filled substrates and connecting the input / output terminals of the patterned elements.

In this case, when the metal-filled and patterned devices are stacked up and down, an insulating substrate is inserted to prevent a short and the via holes are electrically connected only to input / output terminals of the devices.

High frequency, module, transmit / receive, punching, metal, electrode

Description

FRONT-END MODULE AND METHOD FOR MANUFACTURING OF FRONT-END MODULE}

1 is a block diagram showing the structure of a front end module according to the prior art;

2 is a view for explaining a front end module manufacturing method according to the prior art.

3 is a view showing a pattern of the elements of the front end module on the substrate in accordance with the prior art.

4A and 4B are views for explaining a process of patterning a front end module element on a substrate according to the present invention;

5 shows a cross section of an element patterned on a substrate in accordance with the present invention.

* Description of the symbols for the main parts of the drawings *

100: diplexer 101: antenna

103a: first filter 103b: second filter

105a: first switch 105b: second switch

107a: first phase shift 107a: second phase shift

200: ceramic substrate 201: punching groove

203: metal pattern

The present invention relates to a front end module and a method of manufacturing the same, and more particularly, to manufacture a front end module capable of improving characteristics of devices by accurately patterning a cross section and a length of a metal pattern patterned as switching elements in a high frequency transmission / reception module. It is about a method.

Background Art In recent years, with the development of mobile communication systems, mobile communication devices such as mobile phones and portable information terminals are rapidly spreading, and the demand for miniaturization and high performance of these devices has been required to reduce the size and performance of components used therein.

In addition, two types of wireless communication systems, analog and digital, are used in mobile telephones, and the frequencies used for wireless communication are in the 800 MHz to 1 GHz band and the 1.5 GHz to 2.0 GHz band.

In particular, SAW filters are widely used as band pass filters in communication devices and other electronic devices. SAW filters include a lateral SAW filter having two interdigital transducers (IDTs) arranged at a predetermined distance on a piezoelectric substrate, and a SAW resonator filter constituting a resonator on a piezoelectric substrate.

As SAW resonator filters, a single-sided reflection SAW resonator filter using shear horizontal surface acoustic waves, such as love waves, BGS (Bluestein-Gulyaev-Shimuzu) waves, and other similar waves, is known.                         

Recently, a duplexer is manufactured and used as a chip to filter and transmit only a predetermined band frequency of a signal when transmitting and receiving a signal in a communication device, or to receive a signal of a predetermined frequency band when receiving a signal.

In addition, a film bulk acoustic resonator (FBAR), which is a mobile communication component, has been developed. The FBAR filter extracts only a specific frequency, removes noise, and improves sound quality while receiving a high frequency of 1 to 15 kHz. It is a next-generation filter that is smaller and lighter than the existing surface acoustic wave (SAW) filter and ceramic filter and is one tenth to one hundredth of the size compared to the existing surface acoustic wave (SAW) filter and ceramic filter by using the semiconductor sputtering process. This is a complementary metal oxide semiconductor (CMOS) process is evaluated as a technology capable of single-chip high-frequency integrated circuit (MMIC) of the RF stage of wireless communication.

In the above description, the saw-duplexer is used for an intermediate frequency filter of an image, a time delay of a signal, etc. in a television, and its configuration is modified or mechanical vibration of an electrical input signal on a piezoelectric body such as LiTaO3, LiNbO3, or the like. An input converter for converting and an opposing shape are formed, and an output converter for converting mechanical vibration into an electrical signal and outputting the load to the load is formed. have.

In addition, the saw filter and the FBAR filter have been manufactured in the form of an integrated package with circuit elements formed on a ceramic laminate substrate by a technique called low temperature co-fired ceramic (LTCC). .

LTCC is usually manufactured by making a board as a board and metallizing it when constructing a circuit. However, this method has difficulty in integration and miniaturization.

Accordingly, when the LTCC is used, integration and miniaturization can be achieved because of the co-fire process technology in which a metal and its ceramic substrate are simultaneously made at low temperature.

Glass-based or mixed ceramic-based substrates can be pressed and fired to metal-clad substrates at around 800 ~ 1000 ℃ and are well suited for high-frequency passive device fabrication.

1 is a block diagram illustrating a dual band duplexer according to the prior art.

As shown in FIG. 1, recently, a communication device configures a high frequency switch module to transmit and receive a dual band frequency signal. First, a DCS and a frequency band below 1000 MHz are used to transmit and receive data signals using a frequency band of 1700 MHz or more. GSM is used to transmit / receive data signals using FEM (Front End Module).

An antenna 101 for transmitting and receiving high frequency signals of different frequency bands, a diplexer 100 for filtering signals of different frequency bands transmitted and received from the antenna 101, and a separation from the diplexer 100 DCS transceiver terminal using 1800MHz band frequency signal (DCS T _X , The GSM transmit / receive terminals GSM T _X and GSM R _X are separated from the DCS R _X ) and the diplexer 100 and use a 900 MHz band frequency signal.

The first filter 103a is disposed at the DCS transmission terminal Tx, and the type of filter is usually LPF or BPF, and the first phase converter 107a is disposed at the DCS receiving terminal Rx. Similarly, the type of filter uses LPF or BPF.

The second filter 103b is disposed at the GSM transmission terminal Tx, and the type of filter is usually LPF or BPF, and the second phase converter 107b is disposed at the GSM reception terminal Rx. Similarly, the type of filter uses LPF or BPF.

 When the high frequency switch module having the above structure is applied with a frequency signal of 900 MHz band generated inside the system through the GSM transmission terminal (Tx), the filter is filtered around the band width through the second filter (103b). The signal is transmitted to the outside through the antenna 101 while passing through the low pass filter region of the diplexer 100.

After receiving the frequency signal of 900MHz band from the antenna 101 through the same path from the outside, the signal received by the second switch is applied to the GSM receiving terminal (Rx) after filtering the diplexer 100 Be sure to When a signal is received toward the GSM receiving terminal R _X , the signal is converted in the second phase shifter to recover the signal inside the system.

The process of the DCS transmitting terminal Tx and the DCS receiving terminal Rx for the high frequency signal in the 1800 MHz band is performed in the same manner as the signal processing in the GSM terminal described above.

2 is a view for explaining a front-end module manufacturing method according to the prior art.

As shown in FIG. 2, each ceramic substrate entering the package configuration is manufactured through a separate process. First, a ceramic sheet 124 is manufactured instead of wire bonding used for electrical contact with chip pads (not shown).

The ceramic sheet 124 is formed with a pad portion 131 to be in electrical contact with the chip pad, a via hole 128 is formed on the pad portion 131 is pasted with silver therein The pad plate 124a and the inductance print plate 124b on which the appropriate inductances are printed are bonded together.

Here, the thickness of the inductance is generally printed to 20 mu m or less.

The substrate stacked below the ceramic sheet 124 is a first ground printed board 125 having a ground pattern formed to ground the signals applied to the chip. A circuit printed board 126 having a circuit pattern formed thereon is formed below the first ground printed board 125 to allow a duplexer to transmit and receive a signal without interfering with each other in a predetermined frequency band.

Subsequently, a second ground printed board 127 for allowing connection with the ground terminal of the chip is stacked, and a via hole penetrated from the ceramic sheet 124 may be contacted to contact the signal processing element of the external system. Foot pad plates 122 are stacked.

However, in the high frequency transmission and reception front end module having the structure as described above, the value of the designed device and the metal pattern are formed on the substrate according to the LTCC process, so that the completed device value does not exactly match, causing a problem of deterioration of the overall system characteristics. have.

That is, the characteristics of the front end module designed according to the shape of the metal pattern and the characteristics of the substrate on which the metal pattern is formed, and the significant Q value deterioration for signal processing are due to the inductance component due to the thin thickness of the inductance and the change of the shape of the metal pattern. This is because it is degraded.

FIG. 3 is a view illustrating a pattern in which elements of a front end module are patterned on a substrate according to the prior art, and as illustrated, a metal pattern for forming an element on a ceramic substrate has an elliptical shape.

In particular, the thickness of the edge region and the center portion of the cross section of the metal pattern are different from each other, which causes a problem that is different from that of the first designed elements. The difference in the thickness of the edge of the metal pattern from the thickness of the center has a great effect on the inductance performance, resulting in a drop in the Q value.

The present invention is not formed by depositing and patterning a metal film on a substrate for the elements used in the front end module for high frequency transmission and reception, but by forming a device having an accurate dimension by making a predetermined groove or punching in the substrate and filling the metal. It is an object of the present invention to provide a front end module and a method of manufacturing the same that can improve characteristics.

In order to achieve the above object, the front end module manufacturing method according to the present invention,

Punching lines in element form on the substrates to form elements used in phase shifts, switches and filters constituting the transmit / receive module;

Depositing a metal film on the punched lines of each of the substrates, patterning device lines by filling metal into the punched lines; And

Stacking a plurality of metal-filled substrates, and connecting input / output terminals of the patterned elements.

In this case, when the metal-filled and patterned elements are stacked up and down, an insulating substrate is inserted to prevent a short and the via holes are electrically connected only to the input / output terminals of the elements.

In addition, the front end module according to the present invention,

A plurality of substrates formed with line-shaped grooves for forming elements used in phase shifts, switches and filters constituting the transmission / reception module;

A device formed by depositing a metal film along the groove of each substrate; And

It characterized in that it comprises a connecting means for connecting the input and output terminals of the device.                     

Here, an insulating substrate is inserted between the substrates in which the device is configured to prevent a short.

According to the present invention, it is possible to form precise dimensions by punching the substrate and filling metal therein without patterning the substrate when forming the elements in the high frequency transmission / reception module, thereby improving thickness and resolution. There is an advantage to that.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

4A and 4B are views for explaining a process of patterning a front end module element on a substrate according to the present invention.

As shown in FIGS. 4A and 4B, ceramic substrates are stacked according to a low temperature co-fired ceramic (LTCC) to manufacture a front end module for high frequency transmission and reception in a package form.

When manufacturing the front end module package by the LTCC process as described above, a metal film is deposited and patterned on the ceramic substrate 200 to complete the resistance, inductance, and capacitance devices.

At this time, unlike in the prior art, a punching groove 201 is formed in the substrate along a line on which a metal pattern corresponding to the device is to be formed on the ceramic substrate, and a metal is formed in the inner region of the punching groove 201 on the ceramic substrate 200. By filling in, the device is formed.

In this case, the inductance may have a thickness of up to 200 μm.

The punching method forms a punching groove 201 on the ceramic substrate 200 in a similar manner to forming a via hole on the conventional ceramic substrate 200.

When the metal pattern 203 is formed by forming a groove penetrating the ceramic substrate 200 as described above, the metal pattern 203 and the short that are stacked on the upper or lower sides may be generated. An insulating substrate is inserted between the 200 and only the input / output terminals of the upper and lower substrates can be electrically connected.

Accordingly, the method for manufacturing the front end module for high frequency transmission and reception according to the present invention according to the LTCC process includes punching grooves 200 on the ceramic substrate 201 on the ceramic substrate 201 for the elements used in the phase shift, switch, and filters constituting the transmission and reception module. ).

Then, a metal film is deposited and patterned on each of the ceramic substrates 200 to be stacked so that the metal pattern 203 can be formed on the punched groove 201 region.

When the metal-filled and patterned elements are stacked up and down, a package is manufactured by inserting an insulating substrate between the stacked ceramic substrates to prevent electrical short between the upper and lower substrates.

However, the input / output terminals of the metal patterns 203 on the stacked substrates penetrate the insulating substrate and electrically contact the upper and lower laminated substrates.

5 is a cross-sectional view of a device patterned on a substrate in accordance with the present invention.

As shown in FIG. 5, the metal pattern 203 forming the element on the ceramic substrate 200 is formed by punching the ceramic substrate 200. Since the metal is filled in the grooves, the metal pattern constituting the element is formed. The cross section of 203 is constant.

Therefore, the device value of the design and the device value manufactured by the LTCC manufactured actually have the same value.

In addition, the thickness of the inductance is greatly improved compared to the prior art.

Unlike the thickness of the edge region and the center portion of the cross section of the metal pattern, which have occurred in the prior art, there is a large change in the inductance value because the thickness is different from each other, the Q value can be prevented from falling by having a constant inductance value in design. .

As described in detail above, in the present invention, when the devices are patterned on a substrate in a module that transmits and receives a frequency signal, the devices are formed by punching and forming a metal therein without patterning by deposition and etching. There is an effect that can improve the characteristics.

The present invention is not limited to the above-described embodiments, and various changes can be made by those skilled in the art without departing from the gist of the present invention as claimed in the following claims.

Claims (4)

Punching lines through the substrate in element form on the substrates to form elements used in the phase shift, switch, and filters constituting the transmit / receive module; Depositing a metal film on the punched lines of the respective substrates to fill the metal into the punched lines to pattern the device lines; And Stacking a plurality of metal-filled substrates, and connecting input / output terminals of patterned elements. The front surface of claim 1, wherein when the metal-filled and patterned elements are stacked up and down, an insulating substrate is inserted to prevent shorting, and a front surface is electrically connected to the input / output terminals of the elements through a via hole. End module manufacturing method. A plurality of substrates formed with line-shaped grooves for forming elements used in phase shifts, switches and filters constituting the transmission / reception module; A device formed by depositing a metal film along the groove of each substrate; And Connecting means for connecting an input / output terminal of the device, And the groove of the substrate is formed through the substrate. The method of claim 3, wherein A front end module, characterized in that an insulating substrate is inserted to prevent a short between the substrate on which the device is configured.

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