KR20030085015A - 분자 전자 장치 제조 방법, 분자 전자 장치 및 시스템 - Google Patents

분자 전자 장치 제조 방법, 분자 전자 장치 및 시스템 Download PDF

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Publication number
KR20030085015A
KR20030085015A KR10-2003-7012211A KR20037012211A KR20030085015A KR 20030085015 A KR20030085015 A KR 20030085015A KR 20037012211 A KR20037012211 A KR 20037012211A KR 20030085015 A KR20030085015 A KR 20030085015A
Authority
KR
South Korea
Prior art keywords
layer
molecular
region
passivation
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2003-7012211A
Other languages
English (en)
Korean (ko)
Inventor
첸용
Original Assignee
휴렛-팩커드 컴퍼니(델라웨어주법인)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 컴퍼니(델라웨어주법인) filed Critical 휴렛-팩커드 컴퍼니(델라웨어주법인)
Publication of KR20030085015A publication Critical patent/KR20030085015A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/065—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by making at least a portion of the conductive part non-conductive, e.g. by oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/094—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by transforming insulators into conductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR10-2003-7012211A 2001-03-22 2002-03-21 분자 전자 장치 제조 방법, 분자 전자 장치 및 시스템 Ceased KR20030085015A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/815,922 2001-03-22
US09/815,922 US6707063B2 (en) 2001-03-22 2001-03-22 Passivation layer for molecular electronic device fabrication
PCT/US2002/008934 WO2002078056A2 (en) 2001-03-22 2002-03-21 Passivation layer for molecular electronic device fabrication

Publications (1)

Publication Number Publication Date
KR20030085015A true KR20030085015A (ko) 2003-11-01

Family

ID=25219185

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7012211A Ceased KR20030085015A (ko) 2001-03-22 2002-03-21 분자 전자 장치 제조 방법, 분자 전자 장치 및 시스템

Country Status (5)

Country Link
US (2) US6707063B2 (https=)
EP (1) EP1371063A2 (https=)
JP (1) JP2005509266A (https=)
KR (1) KR20030085015A (https=)
WO (1) WO2002078056A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100470831B1 (ko) * 2002-05-20 2005-03-08 한국전자통신연구원 분자전자소자 제조방법

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432740B1 (en) * 2001-06-28 2002-08-13 Hewlett-Packard Company Fabrication of molecular electronic circuit by imprinting
US7195343B2 (en) * 2004-08-27 2007-03-27 Lexmark International, Inc. Low ejection energy micro-fluid ejection heads
US7242215B2 (en) * 2004-10-27 2007-07-10 Hewlett-Packard Development Company, L.P. Nanoscale latches and impedance-encoded logic for use in nanoscale state machines, nanoscale pipelines, and in other nanoscale electronic circuits
US7443711B1 (en) 2004-12-16 2008-10-28 Hewlett-Packard Development Company, L.P. Non-volatile programmable impedance nanoscale devices
US7741638B2 (en) 2005-11-23 2010-06-22 Hewlett-Packard Development Company, L.P. Control layer for a nanoscale electronic switching device
US9965251B2 (en) * 2006-04-03 2018-05-08 Blaise Laurent Mouttet Crossbar arithmetic and summation processor
US20070231972A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Manufacture of programmable crossbar signal processor
US7302513B2 (en) * 2006-04-03 2007-11-27 Blaise Laurent Mouttet Programmable crossbar signal processor
US20070233761A1 (en) * 2006-04-03 2007-10-04 Mouttet Blaise L Crossbar arithmetic processor
US8183554B2 (en) * 2006-04-03 2012-05-22 Blaise Laurent Mouttet Symmetrical programmable memresistor crossbar structure
US7576565B2 (en) * 2006-04-03 2009-08-18 Blaise Laurent Mouttet Crossbar waveform driver circuit
US7763552B2 (en) * 2006-04-28 2010-07-27 Hewlett-Packard Development Company, L.P. Method of interconnect formation using focused beams
US8766224B2 (en) * 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
US8030754B2 (en) 2007-01-31 2011-10-04 Hewlett-Packard Development Company, L.P. Chip cooling channels formed in wafer bonding gap
US8431921B2 (en) * 2009-01-13 2013-04-30 Hewlett-Packard Development Company, L.P. Memristor having a triangular shaped electrode
WO2011010702A1 (ja) * 2009-07-22 2011-01-27 株式会社村田製作所 アンチヒューズ素子
TW201330282A (zh) * 2012-01-09 2013-07-16 隆達電子股份有限公司 齊納二極體結構及其製造方法
CN103730302B (zh) * 2012-10-10 2016-09-14 清华大学 场发射电子源及场发射装置
US12030081B2 (en) 2019-10-07 2024-07-09 The University Of Chicago Large lateral scale two-dimensional materials and other thin films, and associated systems and methods

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5679449A (en) 1979-11-30 1981-06-30 Mitsubishi Electric Corp Production of semiconductor device
US4371883A (en) * 1980-03-14 1983-02-01 The Johns Hopkins University Current controlled bistable electrical organic thin film switching device
JPH0669109B2 (ja) * 1984-12-07 1994-08-31 シャ−プ株式会社 光半導体装置
US5272359A (en) * 1988-04-07 1993-12-21 California Institute Of Technology Reversible non-volatile switch based on a TCNQ charge transfer complex
JPH02215173A (ja) * 1989-02-16 1990-08-28 Canon Inc スイッチング素子及びその作成方法
JPH02216173A (ja) 1989-02-17 1990-08-29 Canon Inc 画像形成装置のクリーニング装置
US5311039A (en) * 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5350484A (en) 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
US5834824A (en) 1994-02-08 1998-11-10 Prolinx Labs Corporation Use of conductive particles in a nonconductive body as an integrated circuit antifuse
US5514876A (en) * 1994-04-15 1996-05-07 Trw Inc. Multi-terminal resonant tunneling transistor
DE69531477T2 (de) * 1994-05-16 2004-07-15 Koninklijke Philips Electronics N.V. Halbleiteranordnung aus halbleitendem, organischem material
US5424560A (en) * 1994-05-31 1995-06-13 Motorola, Inc. Integrated multicolor organic led array
JP3683669B2 (ja) * 1997-03-21 2005-08-17 株式会社リコー 半導体発光素子
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
EP0968537B1 (en) * 1997-08-22 2012-05-02 Creator Technology B.V. A method of manufacturing a field-effect transistor substantially consisting of organic materials
US6600185B1 (en) * 1999-03-10 2003-07-29 Oki Electric Industry Co., Ltd. Ferroelectric capacitor with dielectric lining, semiconductor memory device employing same, and fabrication methods thereof
US6459095B1 (en) * 1999-03-29 2002-10-01 Hewlett-Packard Company Chemically synthesized and assembled electronics devices
US6314019B1 (en) * 1999-03-29 2001-11-06 Hewlett-Packard Company Molecular-wire crossbar interconnect (MWCI) for signal routing and communications
US6128214A (en) * 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6265243B1 (en) * 1999-03-29 2001-07-24 Lucent Technologies Inc. Process for fabricating organic circuits
DE10001301A1 (de) 2000-01-14 2001-07-19 Opel Adam Ag Gewindemutter
US6541309B2 (en) 2001-03-21 2003-04-01 Hewlett-Packard Development Company Lp Fabricating a molecular electronic device having a protective barrier layer
US6458621B1 (en) * 2001-08-01 2002-10-01 Hewlett-Packard Company Batch fabricated molecular electronic devices with cost-effective lithographic electrodes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100470831B1 (ko) * 2002-05-20 2005-03-08 한국전자통신연구원 분자전자소자 제조방법

Also Published As

Publication number Publication date
US20030186466A1 (en) 2003-10-02
US20020172064A1 (en) 2002-11-21
JP2005509266A (ja) 2005-04-07
EP1371063A2 (en) 2003-12-17
WO2002078056A3 (en) 2003-02-13
WO2002078056A2 (en) 2002-10-03
US6707063B2 (en) 2004-03-16
US6835575B2 (en) 2004-12-28

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