KR20030078209A - An apparatus of fabricating semiconductor devices, having a winding inner tube - Google Patents
An apparatus of fabricating semiconductor devices, having a winding inner tube Download PDFInfo
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- KR20030078209A KR20030078209A KR1020020017094A KR20020017094A KR20030078209A KR 20030078209 A KR20030078209 A KR 20030078209A KR 1020020017094 A KR1020020017094 A KR 1020020017094A KR 20020017094 A KR20020017094 A KR 20020017094A KR 20030078209 A KR20030078209 A KR 20030078209A
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- inner tube
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
Description
본 발명은 반도체 제조장비에 관한 것으로, 특히 굴곡형 내부 튜브를 구비하는 반도체 제조장비에 관한 것이다.The present invention relates to semiconductor manufacturing equipment, and more particularly, to semiconductor manufacturing equipment having a curved inner tube.
반도체 소자의 제조 공정에 사용되는 장비중에서 이중 튜브를 구비하는 대표적인 장치로는 증착장치가 있다. 이러한 증착장치는 화학기상증착(Chemical vapor deposition)등의 증착 공정 및 산화(Oxidation) 공정등에 쓰인다.A representative apparatus having a double tube among the equipment used in the manufacturing process of the semiconductor device is a deposition apparatus. Such a deposition apparatus is used for deposition processes such as chemical vapor deposition and oxidation processes.
종래 기술에 따른, 이중 튜브를 구비하는 수직형 증착장치의 단면도를 도 1에 나타내었다. 종래의 수직형 증착 장치는 웨이퍼(W)가 로딩되는 링(1), 상기 링(1)을 지지하는 보트(2), 상기 보트(2)를 둘러싸는 내부 튜브(3), 상기 내부튜브(3)를 둘러싸는 외부 튜브(5), 상기 외부튜브(5)를 둘러싸는 히터(7), 상기 내부튜브(3) 아래에 위치하며 상기 내부튜브(3)로 가스를 공급하는 가스 주입구(9), 및 상기 가스 주입구(9) 위에 위치하며 상기 외부 튜브(5)와 연결된 가스 배출을 위한 가스 배출구(11)를 구비한다. 여기서 상기 내부튜브(3)는 직선형이다. 즉, 상기 내부 튜브(3)는 내부의 표면이 굴곡이나 돌출부가 없는 직선형 원통형이다.1 is a cross-sectional view of a vertical deposition apparatus having a double tube according to the prior art. Conventional vertical deposition apparatus has a ring (1) loaded with a wafer (W), a boat (2) for supporting the ring (1), an inner tube (3) surrounding the boat (2), the inner tube ( 3, a gas inlet (9) surrounding the outer tube (5), a heater (7) surrounding the outer tube (5), located below the inner tube (3) and supplying gas to the inner tube (3). And a gas outlet 11 positioned above the gas inlet 9 and connected to the outer tube 5 to discharge gas. The inner tube 3 is here straight. In other words, the inner tube (3) is a straight cylindrical with no inner surface bends or protrusions.
도 2a는 도 1의 A 부분을 확대한 수직형 증착장치의 부분 단면도로써, 주입된 가스의 흐름을 나타내다. 도 2b는 도 2a의 A 부분을 위에서 본 평면도이다. 도 2a 및 도 2b를 참고하여, 상기 내부 튜브(3)가 직선형이므로 상기 가스 주입구(9)로 부터 주입된 가스 중 소량만 웨이퍼 사이로 들어가 반응에 참여할 뿐, 대부분은위로 상승한다. 따라서, 웨이퍼의 가장자리에는 박막이 두껍게 형성되지만, 웨이퍼의 중앙부에는 박막이 얇게 형성된다. 이는, 식각 공정등의 후속공정에서 여러가지 문제점을 발생시킨다.FIG. 2A is a partial cross-sectional view of the vertical deposition apparatus, in which the portion A of FIG. 1 is enlarged, illustrating a flow of injected gas. FIG. 2B is a plan view of the portion A of FIG. 2A seen from above. FIG. 2A and 2B, since the inner tube 3 is straight, only a small amount of the gas injected from the gas inlet 9 enters between the wafers and participates in the reaction, most of which rises up. Therefore, a thin film is formed at the edge of the wafer, but a thin film is formed at the center of the wafer. This causes various problems in subsequent processes such as an etching process.
따라서, 본 발명이 이루고자 하는 기술적 과제는 내부 튜브내의 반응 가스의 흐름을 균일하게 할 수 있는 반도체 제조 장비를 제공하는데 있다.Accordingly, an object of the present invention is to provide a semiconductor manufacturing equipment capable of making uniform the flow of the reaction gas in the inner tube.
도 1은 종래기술에 따른 이중 튜브를 구비하는 수직형 증착장치의 단면도를 나타낸다.1 shows a cross-sectional view of a vertical deposition apparatus having a double tube according to the prior art.
도 2a는 도 1의 A 부분을 확대한 수직형 증착장치의 부분 단면도이다.FIG. 2A is a partial cross-sectional view of a vertical deposition apparatus in enlarged part A of FIG. 1.
도 2b는 도 2a의 A 부분을 위에서 바라본 평면도이다.FIG. 2B is a plan view of a portion A of FIG. 2A viewed from above. FIG.
도 3은 본 발명의 일 실시예에 따른 이중 튜브를 구비하는 수직형 증착장치의 단면도를 나타낸다.Figure 3 shows a cross-sectional view of a vertical vapor deposition apparatus having a double tube according to an embodiment of the present invention.
도 4a는 도 3의 B 부분을 확대한, 본 발명의 일 실시예에 따른 수직형 증착장치의 부분 단면도이다.FIG. 4A is a partial cross-sectional view of a vertical deposition apparatus according to an embodiment of the present invention, in which portion B of FIG. 3 is enlarged.
도 4b는 도 3의 B 부분을 위에서 바라본 평면도이다.4B is a plan view of a portion B of FIG. 3 viewed from above.
도 5는 본 발명의 또 다른 실시예에 따른 이중 튜브를 구비하는 수직형 증착 장치의 단면도를 나타낸다.5 is a cross-sectional view of a vertical deposition apparatus having a double tube according to another embodiment of the present invention.
도 6a는 도 5의 C 부분을 확대한, 본 발명의 또 다른 실시예에 따른 수직형 증착장치의 부분 단면도이다.FIG. 6A is a partial cross-sectional view of a vertical deposition apparatus according to another embodiment of the present invention, in which portion C of FIG. 5 is enlarged.
도 6b는 도 5의 C 부분을 위에서 바라본 평면도이다.FIG. 6B is a plan view of a portion C of FIG. 5 viewed from above.
상기 기술적 과제를 달성하기 위해서, 본 발명에 따른 반도체 제조 장비는 내부 튜브와 외부 튜브로 이루어진 이중튜브를 구비하며, 그 중에서 내부튜브는 돌출부를 갖거나 굴곡형인 것을 특징으로 한다.In order to achieve the above technical problem, the semiconductor manufacturing equipment according to the present invention comprises a double tube consisting of an inner tube and an outer tube, wherein the inner tube is characterized in that it has a protrusion or curved.
좀 더 상세하게, 본 발명에 따른 반도체 제조 장비는 웨이퍼가 로딩되는 링, 상기 링을 지지하는 보트, 상기 보트를 둘러싸는 내부 튜브, 상기 내부 튜브를 둘러싸는 외부 튜브, 상기 외부 튜브를 둘러싸는 히터, 상기 내부 튜브의 하부에 위치하며, 상기 내부 튜브로 가스를 주입하는 가스 주입구, 및 상기 가스 주입구 위에 위치하며 상기 외부 튜브와 연결된 가스 배출구를 구비한다.More specifically, the semiconductor manufacturing equipment according to the present invention includes a ring loaded with a wafer, a boat supporting the ring, an inner tube surrounding the boat, an outer tube surrounding the inner tube, and a heater surrounding the outer tube. And a gas inlet located below the inner tube and injecting gas into the inner tube, and a gas outlet located on the gas inlet and connected to the outer tube.
본 발명의 일 예에 따르면, 상기 내부 튜브는 내벽으로부터 중심쪽으로 돌출한 환형의 복수개의 돌출부를 갖는다.According to one embodiment of the invention, the inner tube has a plurality of annular protrusions protruding toward the center from the inner wall.
본 발명의 또 다른 일 예에 따르면, 상기 내부 튜브는 그 자체가 굴곡형이며 석영으로 이루어진다.According to another example of the invention, the inner tube is itself curved and made of quartz.
이하, 첨부한 도면들을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 본 발명의 바람직한 실시예에서는 이중 튜브를 구비하는 반도체 제조 장비 중 대표적인 장비로 수직형 증착 장비를 설명한다. 그러나, 본 발명은 여기서 설명되어지는 실시예에 한정되지 않고 다른 형태로 구체화될 수도 있다. 오히려, 여기서 소개되는 실시예는 개시된 내용이 철저하고 완전해질 수 있도록 그리고 당업자에게 본 발명의 사상이 충분히 전달될 수 있도록 하기 위해 제공되어지는 것이다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In a preferred embodiment of the present invention will be described a vertical deposition equipment as a representative of the semiconductor manufacturing equipment having a double tube. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided to ensure that the disclosed subject matter is thorough and complete, and that the spirit of the invention will be fully conveyed to those skilled in the art.
도 3은 본 발명의 일 실시예에 따른 이중 튜브를 구비하는 수직형 증착장치의 단면도를 나타낸다. 도 4a는 도 3의 B 부분을 확대한, 본 발명의 일 실시예에 따른 수직형 증착장치의 부분 단면도이다. 도 4b는 도 3의 B 부분을 위에서 바라본 평면도이다.Figure 3 shows a cross-sectional view of a vertical vapor deposition apparatus having a double tube according to an embodiment of the present invention. FIG. 4A is a partial cross-sectional view of a vertical deposition apparatus according to an embodiment of the present invention, in which portion B of FIG. 3 is enlarged. 4B is a plan view of a portion B of FIG. 3 viewed from above.
도 3, 도 4a 및 도 4b를 참조하여, 본 발명의 일 실시예에 따른 수직형 증착 장치는 웨이퍼(W)가 로딩되는 링(10), 상기 링(10)을 지지하는 보트(20), 상기 보트(20)를 둘러싸는 원통형의 내부 튜브(30), 상기 내부튜브(30)를 둘러싸는 외부 튜브(50), 상기 외부튜브(50)를 둘러싸는 히터(70), 상기 내부 튜브(30)의 하단부에 위치하며 상기 내부 튜브(30)로 가스를 공급하기 위한 가스 주입구(90), 및 상기 가스 주입구(90) 위에 위치하며 상기 외부 튜브(50)와 연결되어 가스 배출을 위한 가스 배출구(110)를 구비한다. 여기서, 상기 내부튜브(30)는 일정 간격의 높이마다, 내벽의 둘레를 따라 안쪽으로 ℓ만큼 돌출한 환형의 돌출부(35)를 갖는다. 상기 내부 튜브(30)는 석영으로 이루어진다. 도 4a에서 화살표는 가스의 흐름을 나타낸다. 상기 가스 주입구(90)으로 주입된 가스는 상기 내부튜브(30)내에서 상기보트(10)에 로딩된 웨이퍼(W)들과 반응하고, 상기 내부튜브(30)와 상기 외부튜브(50) 사이로 하강하여 상기 가스 배출구(110)를 통해 빠져나간다. 상기 내부 튜브(30)가 상기 돌출부(35)를 갖으므로 상기 가스 주입구(90)로 부터 주입된 가스가 수직 상승하다가, 상기 돌출부(35)에 닿으면 수직 상승이 차단되어 웨이퍼 쪽으로 흐른다. 따라서, 종래기술에 비해 많은 양의 가스가 웨이퍼 사이로 흐르게 되고 이는 웨이퍼 상에 균일한 막질을 형성하게 한다.3, 4A and 4B, the vertical deposition apparatus according to an embodiment of the present invention is a ring 10 is loaded with a wafer (W), a boat 20 for supporting the ring 10, Cylindrical inner tube 30 surrounding the boat 20, outer tube 50 surrounding the inner tube 30, heater 70 surrounding the outer tube 50, the inner tube 30 Located at the lower end of the gas inlet 90 for supplying gas to the inner tube 30, and the gas inlet 90 is located above the gas inlet for the gas discharge port ( 110). Here, the inner tube 30 has an annular protrusion 35 protruding inwardly inwardly along the circumference of the inner wall at predetermined heights. The inner tube 30 is made of quartz. Arrows in FIG. 4A indicate the flow of gases. The gas injected into the gas inlet 90 reacts with the wafers W loaded on the boat 10 in the inner tube 30, and between the inner tube 30 and the outer tube 50. It descends and exits through the gas outlet 110. Since the inner tube 30 has the protrusion 35, the gas injected from the gas inlet 90 rises vertically, and when the inner tube 30 contacts the protrusion 35, the vertical rise is blocked and flows toward the wafer. Thus, a larger amount of gas flows between wafers than in the prior art, which results in the formation of a uniform film on the wafer.
도 5는 본 발명의 또 다른 실시예에 따른 이중 튜브를 구비하는 수직형 증착장치의 단면도를 나타낸다. 도 6a는 도 5의 C 부분을 확대한, 본 발명의 또 다른 실시예에 따른 수직형 증착장치의 부분 단면도이다. 도 6b는 도 5의 C 부분을 위에서 바라본 평면도이다.5 is a cross-sectional view of a vertical deposition apparatus having a double tube according to another embodiment of the present invention. FIG. 6A is a partial cross-sectional view of a vertical deposition apparatus according to another embodiment of the present invention, in which portion C of FIG. 5 is enlarged. FIG. 6B is a plan view of a portion C of FIG. 5 viewed from above.
도 5, 도 6a 및 도 6b를 참조하여, 본 발명의 또 다른 실시예에 따른 수직형 증착 장치는 웨이퍼(W)가 로딩되는 링(11), 상기 링(11)을 지지하는 보트(21), 상기 보트(21)를 둘러싸는 내부 튜브(31), 상기 내부튜브(31)를 둘러싸는 외부 튜브(51), 상기 외부튜브(51)를 둘러싸는 히터(71), 상기 내부 튜브(31)의 하단부에 위치하며 상기 내부 튜브(31)로 가스를 공급하기 위한 가스 주입구(91), 및 상기 가스 주입구(91) 위에 위치하며 상기 외부 튜브(50)와 연결되어 가스 배출을 위한 가스 배출구(111)를 구비한다. 여기서, 상기 내부튜브(31)는 그 자체가 도면에서와 같이 굴곡형이며, 내부에서 굴곡에 따른 반지름은 도 6a에서처럼 m만큼 차이가 난다. 넓은 상기 내부 튜브(31)는 석영으로 이루어진다. 본 실시예에서, 상기 가스 주입구(91)으로 주입된 가스는 수직 상승하다가, 상기 내부튜브(31)의 굴곡면에 닿으면 수직 상승이 차단되어 웨이퍼 쪽으로 흐른다. 따라서, 종래기술에 비해 많은 양의 가스가 웨이퍼 사이로 흐르게 되고 이는 웨이퍼 상에 균일한 막질을 형성하게 한다.5, 6A, and 6B, a vertical deposition apparatus according to another embodiment of the present invention includes a ring 11 on which a wafer W is loaded, and a boat 21 supporting the ring 11. , An inner tube 31 surrounding the boat 21, an outer tube 51 surrounding the inner tube 31, a heater 71 surrounding the outer tube 51, and the inner tube 31. Located at the lower end of the gas inlet 91 for supplying gas to the inner tube 31, and is located above the gas inlet 91 and connected to the outer tube 50, the gas outlet 111 for gas discharge ). Here, the inner tube 31 itself is curved as shown in the figure, and the radius according to the bending inside is different by m as shown in Figure 6a. The wide inner tube 31 is made of quartz. In the present embodiment, the gas injected into the gas inlet 91 rises vertically, and when the gas reaches the curved surface of the inner tube 31, the vertical rise is blocked and flows toward the wafer. Thus, a larger amount of gas flows between wafers than in the prior art, which results in the formation of a uniform film on the wafer.
본 발명에 따라, 이중 튜브를 갖는 증착장치에서 내부 튜브에 환형의 돌출부를 만들거나 내부 튜브를 굴곡형으로 만듦으로써, 내부 튜브내에서의 반응가스의 흐름을 균일하게 하여, 웨이퍼 상에 균일한 막질을 형성할 수 있다.According to the present invention, in the vapor deposition apparatus having a double tube, by making an annular protrusion on the inner tube or by making the inner tube bent, the flow of the reaction gas in the inner tube is made uniform, so that the film is uniformly formed on the wafer. Can be formed.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020020017094A KR20030078209A (en) | 2002-03-28 | 2002-03-28 | An apparatus of fabricating semiconductor devices, having a winding inner tube |
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| KR1020020017094A KR20030078209A (en) | 2002-03-28 | 2002-03-28 | An apparatus of fabricating semiconductor devices, having a winding inner tube |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100749632B1 (en) * | 2006-08-28 | 2007-08-14 | 동부일렉트로닉스 주식회사 | Device for manufacturing wafer slide |
| KR100862857B1 (en) * | 2003-12-23 | 2008-10-09 | 동부일렉트로닉스 주식회사 | Apparatus of double tubes furnace |
| CN111668344A (en) * | 2020-06-29 | 2020-09-15 | 浙江晶科能源有限公司 | Manufacturing method of solar cell |
-
2002
- 2002-03-28 KR KR1020020017094A patent/KR20030078209A/en not_active Application Discontinuation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100862857B1 (en) * | 2003-12-23 | 2008-10-09 | 동부일렉트로닉스 주식회사 | Apparatus of double tubes furnace |
| KR100749632B1 (en) * | 2006-08-28 | 2007-08-14 | 동부일렉트로닉스 주식회사 | Device for manufacturing wafer slide |
| CN111668344A (en) * | 2020-06-29 | 2020-09-15 | 浙江晶科能源有限公司 | Manufacturing method of solar cell |
| CN111668344B (en) * | 2020-06-29 | 2021-12-14 | 浙江晶科能源有限公司 | Manufacturing method of solar cell |
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