KR20040108031A - vertical furnace for manufacturing a semiconductor - Google Patents
vertical furnace for manufacturing a semiconductor Download PDFInfo
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- KR20040108031A KR20040108031A KR1020030038769A KR20030038769A KR20040108031A KR 20040108031 A KR20040108031 A KR 20040108031A KR 1020030038769 A KR1020030038769 A KR 1020030038769A KR 20030038769 A KR20030038769 A KR 20030038769A KR 20040108031 A KR20040108031 A KR 20040108031A
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- inner tube
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- vertical diffusion
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Abstract
Description
본 발명은 반도체 제조 공정에 사용되는 확산로에 관한 것으로, 보다 상세하게는 내부튜브의 구조 및 공정가스의 흐름방향을 개선한 반도체 제조용 종형 확산로에 관한 것이다.The present invention relates to a diffusion furnace for use in a semiconductor manufacturing process, and more particularly to a vertical diffusion furnace for semiconductor manufacturing that improved the structure of the inner tube and the flow direction of the process gas.
일반적으로, 반도체 제조 공정에서 사용되는 화학 기상 증착 공정(Chemical Vapor Deposition; CVD)이란 기체 상태의 화합물을 분해한 후 화학적 반응에 의해 반도체 기판상에 일정 박막을 증착하는 공정으로, 최근에는 증착막의 균일도(uniformity)가 좋으며, 많은 양의 웨이퍼에 대해 동시에 공정을 진행할 수 있을 뿐만 아니라 가스의 소모량이 적어 생산원가가 낮은 공정이 가능한 저압화학기상증착 장치가 주로 사용되고 있다.In general, chemical vapor deposition (CVD), which is used in a semiconductor manufacturing process, is a process of depositing a thin film on a semiconductor substrate by chemical reaction after decomposing a gaseous compound, and recently, uniformity of a deposited film. The low pressure chemical vapor deposition apparatus which has good uniformity, can process a large amount of wafers at the same time, and has a low production cost due to low gas consumption is mainly used.
반도체 소자의 제조 공정에 사용되는 박막 증착 설비중에서 수직형(Vertical)구조를 갖는 화학 기상 증착 장치는 일반적으로 외부튜브(200)와 내부튜브(300), 플랜지부(130), 보우트(400), 그리고 유입관(110)과 배기관(120)을 가진다.Chemical vapor deposition apparatus having a vertical (Vertical) structure in the thin film deposition equipment used in the manufacturing process of the semiconductor device is generally the outer tube 200, the inner tube 300, the flange portion 130, the boat 400, And it has an inlet pipe 110 and the exhaust pipe (120).
도 1에서는 반도체 웨이퍼의 표면을 확산하기 위한 용도로 사용되는 종래 종형 확산로를 보여주고 있다.1 shows a conventional vertical diffusion furnace used for diffusing a surface of a semiconductor wafer.
첨부된 도 1을 참조하면, 수직형(Vertical) 구조를 갖는 공정챔버(150) 내부에는 외부튜브(200)와 내부튜브(300)가 일정거리 이격되어 수직으로 배치되고, 상기 내부튜브(300) 내부에는 다수매의 웨이퍼(W)들이 적층되어 있는 보우트(400)가 위치된다.Referring to FIG. 1, the outer tube 200 and the inner tube 300 are vertically spaced apart from each other by a predetermined distance in the process chamber 150 having a vertical structure, and the inner tube 300. Inside is a boat 400 in which a plurality of wafers W are stacked.
상기 내부튜브(300)는 상부와 하부가 개방되어 있으며, 그 하부가 플랜지부(130)에 결합되고, 상기 외부튜브(200)는 하부가 플랜지부(130)에 결합되며 상부는 막혀있는 구조이다.The inner tube 300 is open at the top and bottom, the lower portion is coupled to the flange portion 130, the outer tube 200 is the structure is the lower portion is coupled to the flange portion 130 and the top is blocked. .
또한, 상기 공정 챔버(150)는 일측 하단에 공정가스 공급을 위한 유입관(110)이 연결되어 공정가스가 내부튜브(300)의 내부로 주입된다. 또한, 상기 공정 챔버(150)의 또 다른 일측 하단에는 외부튜브(200)와 연결된 배기관(120)이 연결되어진다.In addition, the process chamber 150 is connected to the inlet pipe 110 for supplying the process gas at one side lower end of the process gas is injected into the inner tube (300). In addition, an exhaust pipe 120 connected to the outer tube 200 is connected to the lower side of the other side of the process chamber 150.
이러한 종형 확산로에 있어서, 공정의 균일도에 영향을 주는 공정조건으로는 온도, 압력, 가스의 유량이 있으며 그 중에서도 특히 가스의 흐름은 공정진행에 미치는 영향이 가장 크다. 따라서, 균일하고 효율적인 가스의 공급은 공정의 균일도에 중요한 변수가 된다.In such vertical diffusion furnaces, process conditions affecting the uniformity of the process include temperature, pressure, and gas flow rate, and gas flow has the greatest influence on the process progress. Therefore, uniform and efficient supply of gas is an important variable for the uniformity of the process.
그러나, 상기 내부튜브(300)가 수직으로 동일한 직경을 갖도록 형성되어 있기 때문에, 공정가스가 내부튜브(300) 내부에 머무는 시간이 짧고, 공정가스가 수직으로 올라가면서 보우트(400)에 적재된 다수매의 인접하는 웨이퍼(W)들 사이의 좁은 공간에는 효과적으로 침투되지 않았다.However, since the inner tube 300 is formed to have the same diameter vertically, the time that the process gas stays inside the inner tube 300 is short, and as the process gas rises vertically, many of the boats 400 are loaded. It did not penetrate effectively into the narrow space between the adjacent wafers W of each sheet.
이와 같이, 내부튜브(300) 내부에서 공정가스의 농도 분포가 일정하지 않게 되고, 공정가스의 소모량은 많은 반면 웨이퍼(W)들의 적층된 위치에 따라 부분별로 산포가 이루어지지 않아 공정의 불균일성을 초래하게 되었다.As such, the concentration distribution of the process gas in the inner tube 300 is not constant, and the consumption of the process gas is large, but the scattering is not made for each part according to the stacked positions of the wafers W, resulting in nonuniformity of the process. Was done.
본 발명은 상술한 바와 같은 종래의 문제점을 해결하기 위한 것으로, 다수매의 웨이퍼가 적재된 보우트의 공간에 공정가스를 깊숙히 침투시켜, 웨이퍼의 균일한 박막이 증착되도록 하는 반도체 제조용 종형 확산로를 제공하는데 목적이 있다.The present invention is to solve the conventional problems as described above, to provide a vertical diffusion path for the semiconductor manufacturing to infiltrate the process gas deep into the space of the boat on which a plurality of wafers are loaded, to deposit a uniform thin film of the wafer. The purpose is to.
도 1은 종래 종형 CVD 장치의 개략도;1 is a schematic diagram of a conventional vertical CVD apparatus;
도 2는 본 발명인 종형 확산로의 바람직한 제 1실시예를 도시한 개략도;2 is a schematic view showing a first preferred embodiment of the vertical diffusion furnace of the present invention;
도 3은 도 2의 A부 확대단면도;3 is an enlarged cross-sectional view of portion A of FIG. 2;
도 4는 본 발명인 종형 확산로의 제 2실시예를 도시한 개략도;4 is a schematic view showing a second embodiment of the vertical diffusion furnace of the present invention;
도 5는 본 발명인 종형 확산로의 제 3실시예를 도시한 개략도이다.5 is a schematic view showing a third embodiment of the vertical diffusion furnace of the present invention.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
100 : 종형확산로 110 : 유입관100: vertical diffusion path 110: inlet pipe
120 : 배기관 130 : 플랜지부120: exhaust pipe 130: flange
150 : 챔버 200 : 외부튜브150: chamber 200: outer tube
300 : 내부튜브 310 : 상부개구부300: inner tube 310: upper opening
320 : 하부개구부 330 : 골320: lower opening 330: goal
340 : 산 350 : 내측벽340 mountain 350 inner wall
400 : 보우트 W : 웨이퍼400: Boat W: Wafer
상술한 바와 같은 목적을 달성하기 위한 본 발명의 특징에 의하면, 반응로 내부에 공정가스를 주입해서 공정을 진행하는 반도체 제조용 종형 확산로는, 가스가 주입되는 유입관 및 가스가 배출되는 배기관이 연결된 외부튜브와, 상기 외부튜브 내측에 배치되고 상부가 개방된 내부튜브와, 그리고 상기 내부튜브 내측에 설치되어 다수의 웨이퍼들이 적재된 보우트를 포함하며, 상기 내부튜브는 내측벽에 골과 산이 형성된다.According to a feature of the present invention for achieving the above object, a vertical diffusion path for manufacturing a semiconductor that proceeds by injecting a process gas into the reactor, the inlet pipe into which the gas is injected and the exhaust pipe through which the gas is discharged are connected. An outer tube, an inner tube disposed inside the outer tube and opened at an upper portion thereof, and a boat installed inside the inner tube and loaded with a plurality of wafers, the inner tube having bone and acid formed on an inner wall thereof. .
본 발명의 바람직한 실시에에서 상기 내부튜브의 직경은 하부에서 상부로 갈수록 작아진다.In a preferred embodiment of the invention the diameter of the inner tube is smaller from the bottom to the top.
또한, 상기 내부튜브는 상부와 하부가 개방된 원뿔대의 형상을 가진다.In addition, the inner tube has the shape of a truncated cone open top and bottom.
이하, 본 발명의 바람직한 실시예인 도 2내지 도4, 도5를 참조하여 보다 상세히 설명하도록 한다.Hereinafter, the present invention will be described in more detail with reference to FIGS. 2 to 4 and 5.
일반적으로 종형 확산로(100)에서 진행되는 공정의 균일도에 영향을 주는 가장 중요한 공정조건으로는 공정 챔버(150) 내 공정가스의 흐름이다.In general, the most important process condition that affects the uniformity of the process proceeds in the vertical diffusion path 100 is the flow of the process gas in the process chamber 150.
도 2는 본 발명인 종형 확산로의 바람직한 제 1실시예를 도시한 개략도이고, 도 3은 도 2의 A부 확대단면도이며, 도 4는 본 발명인 종형 확산로의 제 2실시예를 도시한 개략도이고, 도 5는 본 발명인 종형 확산로의 제 3실시예를 도시한 개략도이다.Figure 2 is a schematic diagram showing a first preferred embodiment of the vertical diffusion furnace of the present invention, Figure 3 is an enlarged cross-sectional view of portion A of Figure 2, Figure 4 is a schematic diagram showing a second embodiment of the longitudinal diffusion furnace of the present invention. 5 is a schematic view showing a third embodiment of the vertical diffusion furnace of the present invention.
도 2에 도시된 바와 같이, 본 발명에 따른 종형 확산로(100)의 장치는 외부튜브(200), 내부튜브(300), 그리고 보우트(400)를 포함하고 있다.As shown in FIG. 2, the device of the vertical diffusion path 100 according to the present invention includes an outer tube 200, an inner tube 300, and a boat 400.
상기 외부튜브(200)는 고온에 잘 견디는 석영 재질로 형성되며 돔의 형상으로 구성된다.The outer tube 200 is formed of a quartz material that withstands high temperature well and is configured in the shape of a dome.
또한, 상기 외부튜브(200)는 하부가 개방된 개구부(미도시)를 갖는 원통형상으로 상기 개구부는 플랜지부(130)와 결합되어 있으며, 상기 플랜지부(130)의 중심부에는 수직으로 보우트(400)가 적층되어 다수매의 웨이퍼(W)가 적재되어진다.In addition, the outer tube 200 has a cylindrical shape having an opening (not shown) with a lower portion thereof, and the opening is coupled to the flange portion 130, and the bow 400 is vertically formed at the center of the flange portion 130. ) Are stacked and a plurality of wafers W are stacked.
상기 내부튜브(300)는 상기 외부튜브(200)와 상기 보우트(400) 사이에 배치되는 것으로, 상부와 하부가 개방되고, 하부는 상기 플랜지부(130)와 결합된다.The inner tube 300 is disposed between the outer tube 200 and the boat 400, the upper and lower portions are open, the lower portion is coupled to the flange portion 130.
상기 외부튜브(200)의 일측 하단에는 유입관(110)과 배기관(120)이 연결되는데, 상기 유입관(110)은 공정가스가 주입되는 곳으로, 상기 외부튜브(200)를 관통하여 상기 내부튜브(300)의 내부로 주입된다. 또한, 상기 플랜지부(130)를 관통하여 상기 내부튜브(300)로 연결되도록 하여도 무관하다.The lower end of one side of the outer tube 200 is connected to the inlet pipe 110 and the exhaust pipe 120, the inlet pipe 110 is a place where the process gas is injected, the inner tube penetrates the inner It is injected into the tube 300. In addition, it may be connected to the inner tube 300 through the flange portion 130.
상기 배기관(120)은 상기 유입관(110)의 반대방향 일측 하단에 형성되는데, 이 배기관(120)은 상기 보우트(400)에 적층된 웨이퍼(W)에 박막을 형성하고 공정을 마친 가스를 배기하는 통로로서, 외부튜브(200)와 상기 내부튜브(300) 사이의 가스를 배기하는 통로이다. 즉, 상기 유입관(110)은 상기 외부튜브(200)와 상기 플랜지(130), 또는 상기 내부튜브(300)를 관통해서 상기 내부튜브(300)에 연결된다. 그리고, 상기 배기관(120)은 상기 외부튜브(200)와 연결된다.The exhaust pipe 120 is formed at a lower side of the opposite side of the inlet pipe 110, and the exhaust pipe 120 forms a thin film on the wafer W stacked on the boat 400 and exhausts the gas after the process. As a passage to pass through, it is a passage for exhausting the gas between the outer tube 200 and the inner tube 300. That is, the inlet pipe 110 is connected to the inner tube 300 through the outer tube 200 and the flange 130, or the inner tube 300. In addition, the exhaust pipe 120 is connected to the outer tube 200.
한편, 상기 내부튜브(300)는 하부에서 상부로 갈수록 직경이 작아지는 형상을 갖는다. 원뿔을 밑면과 나란한 평면으로 잘랐을 때, 그 평면과 밑면 사이에 부분이다. 본 발명에서의 바람직한 실시예는, 원뿔의 밑면과 평행하게 단부를 단면하고 내부에는 상부와 하부가 관통된 개구부(310, 320)를 갖는다.On the other hand, the inner tube 300 has a shape that decreases in diameter from the bottom to the top. When the cone is cut into planes parallel to the base, it is the part between that plane and the base. Preferred embodiments in the present invention have openings 310 and 320 which cross-section the ends parallel to the underside of the cone and which penetrate the upper and lower portions therein.
즉, 바람직하게는 상부와 하부가 개방된 원뿔대의 형상을 갖는다.That is, it preferably has the shape of a truncated cone open at the top and bottom.
그러나, 첨부된 도 4의 제 2실시예와 같이 소정 높이만큼 하부개구부(320)와 동일한 직경을 갖고, 상부로 갈수록 중심으로 경사진 형상을 갖을 수도 있으며, 도 5의 제 3실시예와 같이, 하단에서 상단까지 호의 형상을 갖도록 상부개구부(310) 중심으로 라운드지게 형성될 수도 있다.However, as shown in the second embodiment of FIG. 4, it may have the same diameter as the lower opening 320 by a predetermined height, and may have a shape inclined toward the center toward the top, as in the third embodiment of FIG. 5. It may be formed round to the center of the upper opening 310 to have a shape of an arc from the bottom to the top.
도 2에 도시된 A부의 확대 단면도인 도 3을 참조하면, 상기 내부튜브(300)는 그 내측벽에 골(330)과 산(340)이 형성된다.Referring to FIG. 3, which is an enlarged cross-sectional view of part A shown in FIG. 2, the inner tube 300 has a valley 330 and a peak 340 formed on an inner wall thereof.
상기 골(330)과 산(340)은 단면이 반원의 형상으로 형성하는 것이 바람직하지만, 삼각의 형상 등 다양하게 변형하여 구성할 수 있고, 상기 골(330)과 산(340)은 일정한 간격을 갖으며 촘촘하게 형성되고, 넓은 간격을 갖으며 형성될 수도 있다.The valleys 330 and the hill 340 are preferably formed in a semicircular cross section, but may be configured by various modifications, such as a triangular shape, and the valleys 330 and the hill 340 may have a predetermined interval. It may have a tight spacing and have a wide spacing.
상기 골(330)과 산(340)은 상기 내부튜브(300)의 하단에서 상단까지 나사산의 형상처럼, 끊기지 않도록 형성하는 것이 바람직하다.The valley 330 and the peak 340 is preferably formed so as not to break, like the shape of the thread from the lower end to the upper end of the inner tube (300).
상술한 골(330)과 산(340)은 본 발명의 실시예에 따른 설명을 하기에 적당한 용어를 선택하여 설명한 것이며, 상기 골(330)과 산(340) 대신 돌기로 형성할 수 있다. 즉, 상기 내부튜브(300)의 내측벽(350)에는 규칙적인, 또는 불규칙하게 복수개의 돌기를 형성할 수도 있다.The above-described valleys 330 and the hill 340 are described by selecting a suitable term for describing according to an embodiment of the present invention, and may be formed by protrusions instead of the valleys 330 and the hill 340. That is, a plurality of protrusions may be formed on the inner wall 350 of the inner tube 300 regularly or irregularly.
다만, 상기 골(330)과 산(340)은 상기 내부튜브(300)에 가스가 주입되는 과정에서 공정가스가 와류(소용돌이치며 흐르는 물,또는 그 흐름)되어 상부로 상승하기 위한 것이다.However, the valley 330 and the acid 340 is for the process gas is vortex (water flowing in a whirlpool, or the flow thereof) in the process of injecting gas into the inner tube 300 to rise to the top.
상술한 바와 같은 본 발명의 실시예에 따른 종형 확산로의 확산 공정은 다음과 같다.The diffusion process of the vertical diffusion furnace according to the embodiment of the present invention as described above is as follows.
먼저, 웨이퍼 캐리어에 적재되어 있는 웨이퍼(W)들은 로봇아암에 의해 상기 보우트(400)로 옮겨진다. 상기 수직 보우트(400)에 다수매의 웨이퍼(W)들이 적재가 완료되면, 상기 보우트(400)는 승강장치에 의해 상기 내부튜브(300) 내부로 승강된다. 그후, 진공펌프와 히터에 의해 상기 종형 확산로(100)의 챔버(150) 내부의 압력 및 온도를 공정이 가능한 기준값으로 설정하여, 상기 챔버내의 압력과 온도에 의해 공정 조건이 완료되면, 내부튜브(300)로 연결된 유입관(110)을 통해 공정가스가 공급된다.First, the wafers W loaded on the wafer carrier are transferred to the boat 400 by the robot arm. When a plurality of wafers W are stacked in the vertical boat 400, the boat 400 is lifted into the inner tube 300 by a lifting device. Thereafter, the pressure and temperature in the chamber 150 of the vertical diffusion path 100 are set to a reference value capable of processing by a vacuum pump and a heater, and when the process conditions are completed by the pressure and temperature in the chamber, the inner tube Process gas is supplied through the inlet pipe 110 connected to (300).
상기 내부튜브(300)로 유입된 공정가스는 상기 내부튜브(300)에 다수매의 웨이퍼(W)들이 적재된 보우트(400)를 통해 상부개구부(310)로 상승하고 외부튜브(200)와 상기 내부튜브(300) 사이를 거쳐 배기관(120)으로 배출된다.The process gas introduced into the inner tube 300 rises to the upper opening 310 through a boat 400 in which a plurality of wafers W are loaded on the inner tube 300, and the outer tube 200 and the It is discharged to the exhaust pipe 120 through the inner tube (300).
이때, 상기한 과정에서 공정가스가 유입된 후 보우트(400)에 적재된 웨이퍼(W)들에 공정가스가 반응할 때, 상기 내부튜브(300)에 형성된 골(330)과 산(340)으로 인해 상기 공정가스는 와류를 발생하게 된다.At this time, when the process gas reacts to the wafers (W) loaded on the boat 400 after the process gas is introduced in the above process, to the valley 330 and the acid 340 formed in the inner tube 300 As a result, the process gas generates a vortex.
또한, 상기 내부튜브(300)에서 공정가스가 상승하여 외부튜브(200)로 흐르는 상부개구부(310)는 좁고, 상기 공정가스가 주입되는 하부개구부(320)는 넓은 형상을 가진다. 즉, 상부보다 하부에 공정가스가 잔류하는 시간과 양이 많게되고, 이로인해 공정가스의 소모량을 줄일 수 있다.In addition, the upper opening 310 which flows into the outer tube 200 by the process gas rises from the inner tube 300 is narrow, and the lower opening 320 into which the process gas is injected has a wide shape. That is, the time and amount of the process gas remaining in the lower portion than the upper portion is increased, thereby reducing the consumption of the process gas.
즉, 내부튜브(300)의 형상을 변경하고, 그 내측벽에 골(330)과 산(340)을 형성하므로서, 보우트(400)에 적재된 웨이퍼(상,중,하)의 위치에 관계없이 동일한 분포를 갖는 박막을 산포할 수 있으며, 웨이퍼(W)들 사이에 공정가스가 깊숙히 침투할 수 있는 효과가 있다.That is, by changing the shape of the inner tube 300 and forming the valleys 330 and the peaks 340 on the inner wall thereof, regardless of the position of the wafer (upper, middle, lower) loaded on the boat 400 Thin films having the same distribution may be scattered, and the process gas may deeply penetrate between the wafers W. FIG.
본 발명에 따른, 또는 본 발명에 기재한 내용들의 실시예 구조에만 국한되지 않으며, 본 발명의 실시예는 여러가지 형태로 변형될 수 있으며, 당업계에서 평균적인 지식을 가진 자에 한하여 다양하게 변형/변경할 수 있다.The present invention is not limited to the structure of the embodiment of the present invention or described in the present invention, and the embodiment of the present invention can be modified in various forms, and various modifications / only to those skilled in the art You can change it.
이상과 같이, 본 발명인 반도체 제조용 종형 확산로로 인해 다음과 같은 효과가 있다.As described above, the vertical diffusion path for manufacturing a semiconductor of the present invention has the following effects.
첫째, 내부튜브가 원뿔대, 또는 상부로 갈수록 직경이 작아지는 형상으로 인해, 내부튜브 내부에 공정가스가 잔류하는 시간이 길게되어 반응하지 않은 미반응 공정가스의 방출을 최대한 줄일 수 있다.First, due to the shape that the inner tube is smaller in diameter as the truncated cone, or the upper portion, the time for which the process gas remains inside the inner tube is long, which can reduce the release of unreacted process gas that has not reacted.
둘째, 내부튜브 내측벽에 골과 산을 형성하여 잔류한 공정가스가 와류현상에 의해 웨이퍼와 웨이퍼 사이의 작은 공간으로도 더욱 더 깊숙이 침투할 수 있다.Second, the process gas remaining by forming valleys and acids on the inner wall of the inner tube can penetrate deeper into the small space between the wafer and the wafer by the vortex phenomenon.
즉, 공정가스의 사용량을 줄이면서 웨이퍼와 웨이퍼 사이에 더 많은 양이 투입되고, 이로 인해 균일한 산화막을 형성할 수 있으므로 두께의 산포 불량을 개선할 수 있다.That is, the amount of process gas is reduced while a larger amount is injected between the wafer and the wafer, thereby forming a uniform oxide film, thereby improving the thickness distribution defect.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7700461B2 (en) | 2006-03-17 | 2010-04-20 | Samsung Electronics Co., Ltd. | Methods of laterally forming single crystalline thin film regions from seed layers |
| KR101524519B1 (en) * | 2012-09-26 | 2015-06-01 | 가부시키가이샤 히다치 고쿠사이 덴키 | Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer readable recording medium |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7700461B2 (en) | 2006-03-17 | 2010-04-20 | Samsung Electronics Co., Ltd. | Methods of laterally forming single crystalline thin film regions from seed layers |
| KR101524519B1 (en) * | 2012-09-26 | 2015-06-01 | 가부시키가이샤 히다치 고쿠사이 덴키 | Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer readable recording medium |
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