KR20030076225A - 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물 - Google Patents
규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물 Download PDFInfo
- Publication number
- KR20030076225A KR20030076225A KR1020027016483A KR20027016483A KR20030076225A KR 20030076225 A KR20030076225 A KR 20030076225A KR 1020027016483 A KR1020027016483 A KR 1020027016483A KR 20027016483 A KR20027016483 A KR 20027016483A KR 20030076225 A KR20030076225 A KR 20030076225A
- Authority
- KR
- South Korea
- Prior art keywords
- polymer
- hydroxystyrene
- silicon
- formula
- acetal
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/42—Block-or graft-polymers containing polysiloxane sequences
- C08G77/442—Block-or graft-polymers containing polysiloxane sequences containing vinyl polymer sequences
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
- G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28129501P | 2001-04-04 | 2001-04-04 | |
US60/281,295 | 2001-04-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20030076225A true KR20030076225A (ko) | 2003-09-26 |
Family
ID=23076695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027016483A KR20030076225A (ko) | 2001-04-04 | 2002-04-04 | 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물 |
Country Status (5)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150092397A (ko) * | 2014-02-03 | 2015-08-13 | 삼성디스플레이 주식회사 | 블록 공중합체 및 이를 사용한 패턴 형성 방법 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6941381B2 (en) | 2001-03-31 | 2005-09-06 | Redback Networks Inc. | Method and apparatus for sync hunting signals |
JP2003031566A (ja) * | 2001-07-16 | 2003-01-31 | Fujitsu Ltd | 低誘電率絶縁膜形成用組成物、これを用いる絶縁膜形成方法、及びそれにより得られた絶縁膜を有する電子部品 |
US6989224B2 (en) * | 2001-10-09 | 2006-01-24 | Shipley Company, L.L.C. | Polymers with mixed photoacid-labile groups and photoresists comprising same |
TWI307819B (en) * | 2002-05-28 | 2009-03-21 | Arch Spec Chem Inc | Acetal protected polymers and photoresist compositions thereof |
JP4225806B2 (ja) * | 2003-03-04 | 2009-02-18 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
ATE446530T1 (de) * | 2003-03-31 | 2009-11-15 | Fujifilm Corp | Positiv arbeitende resistzusammensetzung |
JP4798938B2 (ja) * | 2003-04-11 | 2011-10-19 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | フォトレジストシステム |
US7141692B2 (en) | 2003-11-24 | 2006-11-28 | International Business Machines Corporation | Molecular photoresists containing nonpolymeric silsesquioxanes |
US7399581B2 (en) * | 2005-02-24 | 2008-07-15 | International Business Machines Corporation | Photoresist topcoat for a photolithographic process |
JP4691442B2 (ja) * | 2005-12-09 | 2011-06-01 | 富士フイルム株式会社 | ポジ型レジスト組成物およびそれを用いたパターン形成方法 |
JP4881687B2 (ja) | 2005-12-09 | 2012-02-22 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US7875415B2 (en) * | 2005-12-30 | 2011-01-25 | Intel Corporation | Helical pixilated photoresist |
JP5045314B2 (ja) * | 2007-08-30 | 2012-10-10 | 富士通株式会社 | 液浸露光用レジスト組成物、及びそれを用いた半導体装置の製造方法 |
EP2197840B1 (en) | 2007-10-10 | 2013-11-06 | Basf Se | Sulphonium salt initiators |
US8778278B2 (en) * | 2009-07-15 | 2014-07-15 | General Electric Company | Non bio-adhesive polymer coating composition, articles and devices thereof |
CN102781911B (zh) | 2010-02-24 | 2015-07-22 | 巴斯夫欧洲公司 | 潜酸及其用途 |
CN103649830B (zh) * | 2011-07-08 | 2018-06-01 | Asml荷兰有限公司 | 光刻图案化过程和其中使用的抗蚀剂 |
WO2016124493A1 (en) | 2015-02-02 | 2016-08-11 | Basf Se | Latent acids and their use |
US9857684B2 (en) * | 2016-03-17 | 2018-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon-containing photoresist for lithography |
JP7349887B2 (ja) * | 2019-10-31 | 2023-09-25 | 東京応化工業株式会社 | ハードマスク形成用組成物及び電子部品の製造方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
JP3030672B2 (ja) | 1991-06-18 | 2000-04-10 | 和光純薬工業株式会社 | 新規なレジスト材料及びパタ−ン形成方法 |
EP0659781A3 (de) | 1993-12-21 | 1995-09-27 | Ciba Geigy Ag | Maleinimidcopolymere, insbesonder für Photoresists. |
US5558971A (en) | 1994-09-02 | 1996-09-24 | Wako Pure Chemical Industries, Ltd. | Resist material |
US5478899A (en) * | 1994-10-27 | 1995-12-26 | Shell Oil Company | Alkoxy silyl capping agents for making terminally functionalized polymers |
DE69515163D1 (de) | 1994-12-20 | 2000-03-30 | Olin Microelectronic Chem Inc | Fotolackzusammensetzungen |
DE69516101T2 (de) | 1994-12-20 | 2001-01-11 | Arch Speciality Chemicals Inc | Vernetzte Polymere |
US5593812A (en) | 1995-02-17 | 1997-01-14 | International Business Machines Corporation | Photoresist having increased sensitivity and use thereof |
EP0738744B1 (en) | 1995-04-21 | 2002-11-27 | Arch Specialty Chemicals, Inc. | Cross-linked polymers |
US5886119A (en) | 1995-08-08 | 1999-03-23 | Olin Microelectronic Chemicals, Inc. | Terpolymers containing organosilicon side chains |
EP0780732B1 (en) | 1995-12-21 | 2003-07-09 | Wako Pure Chemical Industries Ltd | Polymer composition and resist material |
JPH09236920A (ja) | 1996-02-28 | 1997-09-09 | Fuji Photo Film Co Ltd | ポジ型フォトレジスト組成物 |
US5861231A (en) | 1996-06-11 | 1999-01-19 | Shipley Company, L.L.C. | Copolymers and photoresist compositions comprising copolymer resin binder component |
US5985524A (en) | 1997-03-28 | 1999-11-16 | International Business Machines Incorporated | Process for using bilayer photoresist |
KR100489576B1 (ko) * | 1997-10-08 | 2005-12-21 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 레지스트 재료 및 패턴 형성 방법 |
US6159653A (en) | 1998-04-14 | 2000-12-12 | Arch Specialty Chemicals, Inc. | Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations |
JP3798552B2 (ja) | 1998-04-23 | 2006-07-19 | 東京応化工業株式会社 | 化学増幅型ホトレジスト |
US6359078B1 (en) | 1998-08-18 | 2002-03-19 | 3M Innovative Properties Company | Polymers having silicon-containing acetal or ketal functional groups |
US6146793A (en) | 1999-02-22 | 2000-11-14 | Arch Specialty Chemicals, Inc. | Radiation sensitive terpolymer, photoresist compositions thereof and 193 nm bilayer systems |
US6323287B1 (en) | 1999-03-12 | 2001-11-27 | Arch Specialty Chemicals, Inc. | Hydroxy-amino thermally cured undercoat for 193 NM lithography |
US6054248A (en) | 1999-03-12 | 2000-04-25 | Arch Specialty Chemicals, Inc. | Hydroxy-diisocyanate thermally cured undercoat for 193 nm lithography |
US6165682A (en) | 1999-09-22 | 2000-12-26 | Arch Specialty Chemicals, Inc. | Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof |
JP3736606B2 (ja) | 1999-10-21 | 2006-01-18 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP2001154359A (ja) * | 1999-11-29 | 2001-06-08 | Fuji Photo Film Co Ltd | ポジ型レジスト積層物 |
JP3839218B2 (ja) * | 2000-03-31 | 2006-11-01 | 信越化学工業株式会社 | 珪素含有化合物、レジスト組成物およびパターン形成方法 |
JP2002062660A (ja) * | 2000-08-16 | 2002-02-28 | Fuji Photo Film Co Ltd | 平版印刷版原版 |
-
2002
- 2002-04-04 US US10/116,717 patent/US6783917B2/en not_active Expired - Fee Related
- 2002-04-04 JP JP2002579890A patent/JP2004519734A/ja active Pending
- 2002-04-04 EP EP02717772A patent/EP1299773A4/en not_active Withdrawn
- 2002-04-04 KR KR1020027016483A patent/KR20030076225A/ko not_active Application Discontinuation
- 2002-04-04 WO PCT/US2002/010639 patent/WO2002082184A1/en active Application Filing
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150092397A (ko) * | 2014-02-03 | 2015-08-13 | 삼성디스플레이 주식회사 | 블록 공중합체 및 이를 사용한 패턴 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
US6783917B2 (en) | 2004-08-31 |
EP1299773A1 (en) | 2003-04-09 |
EP1299773A4 (en) | 2006-06-21 |
US20030065101A1 (en) | 2003-04-03 |
WO2002082184A1 (en) | 2002-10-17 |
JP2004519734A (ja) | 2004-07-02 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |