KR20030076225A - 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물 - Google Patents

규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물 Download PDF

Info

Publication number
KR20030076225A
KR20030076225A KR1020027016483A KR20027016483A KR20030076225A KR 20030076225 A KR20030076225 A KR 20030076225A KR 1020027016483 A KR1020027016483 A KR 1020027016483A KR 20027016483 A KR20027016483 A KR 20027016483A KR 20030076225 A KR20030076225 A KR 20030076225A
Authority
KR
South Korea
Prior art keywords
polymer
hydroxystyrene
silicon
formula
acetal
Prior art date
Application number
KR1020027016483A
Other languages
English (en)
Korean (ko)
Inventor
앤드류 죠셉 블라케니
샌제이 말릭
스테파니 디록커
존 페리
제퍼리 아이젤
Original Assignee
아치 스페셜티 케미칼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아치 스페셜티 케미칼즈, 인코포레이티드 filed Critical 아치 스페셜티 케미칼즈, 인코포레이티드
Publication of KR20030076225A publication Critical patent/KR20030076225A/ko

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42Block-or graft-polymers containing polysiloxane sequences
    • C08G77/442Block-or graft-polymers containing polysiloxane sequences containing vinyl polymer sequences
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020027016483A 2001-04-04 2002-04-04 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물 KR20030076225A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28129501P 2001-04-04 2001-04-04
US60/281,295 2001-04-04

Publications (1)

Publication Number Publication Date
KR20030076225A true KR20030076225A (ko) 2003-09-26

Family

ID=23076695

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020027016483A KR20030076225A (ko) 2001-04-04 2002-04-04 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물

Country Status (5)

Country Link
US (1) US6783917B2 (US06783917-20040831-C00026.png)
EP (1) EP1299773A4 (US06783917-20040831-C00026.png)
JP (1) JP2004519734A (US06783917-20040831-C00026.png)
KR (1) KR20030076225A (US06783917-20040831-C00026.png)
WO (1) WO2002082184A1 (US06783917-20040831-C00026.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150092397A (ko) * 2014-02-03 2015-08-13 삼성디스플레이 주식회사 블록 공중합체 및 이를 사용한 패턴 형성 방법

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6941381B2 (en) 2001-03-31 2005-09-06 Redback Networks Inc. Method and apparatus for sync hunting signals
JP2003031566A (ja) * 2001-07-16 2003-01-31 Fujitsu Ltd 低誘電率絶縁膜形成用組成物、これを用いる絶縁膜形成方法、及びそれにより得られた絶縁膜を有する電子部品
US6989224B2 (en) * 2001-10-09 2006-01-24 Shipley Company, L.L.C. Polymers with mixed photoacid-labile groups and photoresists comprising same
TWI307819B (en) * 2002-05-28 2009-03-21 Arch Spec Chem Inc Acetal protected polymers and photoresist compositions thereof
JP4225806B2 (ja) * 2003-03-04 2009-02-18 富士フイルム株式会社 ポジ型レジスト組成物
ATE446530T1 (de) * 2003-03-31 2009-11-15 Fujifilm Corp Positiv arbeitende resistzusammensetzung
JP4798938B2 (ja) * 2003-04-11 2011-10-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトレジストシステム
US7141692B2 (en) 2003-11-24 2006-11-28 International Business Machines Corporation Molecular photoresists containing nonpolymeric silsesquioxanes
US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
JP4691442B2 (ja) * 2005-12-09 2011-06-01 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP4881687B2 (ja) 2005-12-09 2012-02-22 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7875415B2 (en) * 2005-12-30 2011-01-25 Intel Corporation Helical pixilated photoresist
JP5045314B2 (ja) * 2007-08-30 2012-10-10 富士通株式会社 液浸露光用レジスト組成物、及びそれを用いた半導体装置の製造方法
EP2197840B1 (en) 2007-10-10 2013-11-06 Basf Se Sulphonium salt initiators
US8778278B2 (en) * 2009-07-15 2014-07-15 General Electric Company Non bio-adhesive polymer coating composition, articles and devices thereof
CN102781911B (zh) 2010-02-24 2015-07-22 巴斯夫欧洲公司 潜酸及其用途
CN103649830B (zh) * 2011-07-08 2018-06-01 Asml荷兰有限公司 光刻图案化过程和其中使用的抗蚀剂
WO2016124493A1 (en) 2015-02-02 2016-08-11 Basf Se Latent acids and their use
US9857684B2 (en) * 2016-03-17 2018-01-02 Taiwan Semiconductor Manufacturing Co., Ltd. Silicon-containing photoresist for lithography
JP7349887B2 (ja) * 2019-10-31 2023-09-25 東京応化工業株式会社 ハードマスク形成用組成物及び電子部品の製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JP3030672B2 (ja) 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
EP0659781A3 (de) 1993-12-21 1995-09-27 Ciba Geigy Ag Maleinimidcopolymere, insbesonder für Photoresists.
US5558971A (en) 1994-09-02 1996-09-24 Wako Pure Chemical Industries, Ltd. Resist material
US5478899A (en) * 1994-10-27 1995-12-26 Shell Oil Company Alkoxy silyl capping agents for making terminally functionalized polymers
DE69515163D1 (de) 1994-12-20 2000-03-30 Olin Microelectronic Chem Inc Fotolackzusammensetzungen
DE69516101T2 (de) 1994-12-20 2001-01-11 Arch Speciality Chemicals Inc Vernetzte Polymere
US5593812A (en) 1995-02-17 1997-01-14 International Business Machines Corporation Photoresist having increased sensitivity and use thereof
EP0738744B1 (en) 1995-04-21 2002-11-27 Arch Specialty Chemicals, Inc. Cross-linked polymers
US5886119A (en) 1995-08-08 1999-03-23 Olin Microelectronic Chemicals, Inc. Terpolymers containing organosilicon side chains
EP0780732B1 (en) 1995-12-21 2003-07-09 Wako Pure Chemical Industries Ltd Polymer composition and resist material
JPH09236920A (ja) 1996-02-28 1997-09-09 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
US5861231A (en) 1996-06-11 1999-01-19 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising copolymer resin binder component
US5985524A (en) 1997-03-28 1999-11-16 International Business Machines Incorporated Process for using bilayer photoresist
KR100489576B1 (ko) * 1997-10-08 2005-12-21 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
US6159653A (en) 1998-04-14 2000-12-12 Arch Specialty Chemicals, Inc. Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
JP3798552B2 (ja) 1998-04-23 2006-07-19 東京応化工業株式会社 化学増幅型ホトレジスト
US6359078B1 (en) 1998-08-18 2002-03-19 3M Innovative Properties Company Polymers having silicon-containing acetal or ketal functional groups
US6146793A (en) 1999-02-22 2000-11-14 Arch Specialty Chemicals, Inc. Radiation sensitive terpolymer, photoresist compositions thereof and 193 nm bilayer systems
US6323287B1 (en) 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
US6054248A (en) 1999-03-12 2000-04-25 Arch Specialty Chemicals, Inc. Hydroxy-diisocyanate thermally cured undercoat for 193 nm lithography
US6165682A (en) 1999-09-22 2000-12-26 Arch Specialty Chemicals, Inc. Radiation sensitive copolymers, photoresist compositions thereof and deep UV bilayer systems thereof
JP3736606B2 (ja) 1999-10-21 2006-01-18 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2001154359A (ja) * 1999-11-29 2001-06-08 Fuji Photo Film Co Ltd ポジ型レジスト積層物
JP3839218B2 (ja) * 2000-03-31 2006-11-01 信越化学工業株式会社 珪素含有化合物、レジスト組成物およびパターン形成方法
JP2002062660A (ja) * 2000-08-16 2002-02-28 Fuji Photo Film Co Ltd 平版印刷版原版

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150092397A (ko) * 2014-02-03 2015-08-13 삼성디스플레이 주식회사 블록 공중합체 및 이를 사용한 패턴 형성 방법

Also Published As

Publication number Publication date
US6783917B2 (en) 2004-08-31
EP1299773A1 (en) 2003-04-09
EP1299773A4 (en) 2006-06-21
US20030065101A1 (en) 2003-04-03
WO2002082184A1 (en) 2002-10-17
JP2004519734A (ja) 2004-07-02

Similar Documents

Publication Publication Date Title
KR20030076225A (ko) 규소 함유 아세탈 보호된 중합체 및 이의 포토레지스트조성물
US6380317B1 (en) Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations
US20040137362A1 (en) Novel copolymer, photoresist compositions thereof and deep UV bilayer system thereof
KR101247545B1 (ko) 레지스트 조성물
JP2004500596A (ja) ニトリル/フルオロアルコールポリマー含有フォトレジストおよび関連するミクロリソグラフィのための方法
US6800418B2 (en) Fluorine-containing photosensitive polymer having hydrate structure and resist composition comprising the same
US6830870B2 (en) Acetal protected polymers and photoresists compositions thereof
US6262181B1 (en) Preparation of partially cross-linked polymers and their use in pattern formation
US7211366B2 (en) Photoresist composition for deep ultraviolet lithography
US5595855A (en) Radiation sensitive composition
US6951705B2 (en) Polymers for photoresist compositions for microlithography
US20030064321A1 (en) Free-acid containing polymers and their use in photoresists
US6322948B1 (en) Photoresist cross-linker and photoresist composition comprising the same
US6777162B2 (en) Photosensitive polymer and photoresist composition thereof
US6884566B2 (en) Copolymer, photoresist composition, and process for forming resist pattern with high aspect ratio
JP2003532932A (ja) マイクロリソグラフィのフォトレジスト組成物に用いられるポリマー
US7351521B2 (en) Photoresist composition for deep ultraviolet lithography
KR101113149B1 (ko) 실록산 단량체 및 이를 포함하는 포토레지스트용 중합체
US20060008730A1 (en) Monomers for photoresists bearing acid-labile groups of reduced optical density

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application