KR20030040446A - 회절 시그네춰 분석을 통한 초점 중심 측정방법 - Google Patents
회절 시그네춰 분석을 통한 초점 중심 측정방법 Download PDFInfo
- Publication number
- KR20030040446A KR20030040446A KR10-2003-7003355A KR20037003355A KR20030040446A KR 20030040446 A KR20030040446 A KR 20030040446A KR 20037003355 A KR20037003355 A KR 20037003355A KR 20030040446 A KR20030040446 A KR 20030040446A
- Authority
- KR
- South Korea
- Prior art keywords
- diffraction
- difference
- diffraction gratings
- signatures
- focus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004458 analytical method Methods 0.000 title abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 116
- 230000005855 radiation Effects 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 19
- 238000005259 measurement Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 12
- 230000010287 polarization Effects 0.000 claims description 11
- 230000003595 spectral effect Effects 0.000 claims description 6
- 238000007405 data analysis Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 32
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 238000001459 lithography Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 230000006870 function Effects 0.000 description 9
- 238000004626 scanning electron microscopy Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000000737 periodic effect Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 201000009310 astigmatism Diseases 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 125000003821 2-(trimethylsilyl)ethoxymethyl group Chemical group [H]C([H])([H])[Si](C([H])([H])[H])(C([H])([H])[H])C([H])([H])C(OC([H])([H])[*])([H])[H] 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004215 lattice model Methods 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70641—Focus
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23049100P | 2000-09-06 | 2000-09-06 | |
| US60/230,491 | 2000-09-06 | ||
| US09/946,104 | 2001-09-04 | ||
| US09/946,104 US6429930B1 (en) | 2000-09-06 | 2001-09-04 | Determination of center of focus by diffraction signature analysis |
| PCT/US2001/027657 WO2002021075A1 (en) | 2000-09-06 | 2001-09-05 | Determination of center of focus by diffraction signature analysis |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20030040446A true KR20030040446A (ko) | 2003-05-22 |
Family
ID=26924293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-7003355A Abandoned KR20030040446A (ko) | 2000-09-06 | 2001-09-05 | 회절 시그네춰 분석을 통한 초점 중심 측정방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6429930B1 (enExample) |
| EP (1) | EP1332330A4 (enExample) |
| JP (1) | JP2004508559A (enExample) |
| KR (1) | KR20030040446A (enExample) |
| AU (1) | AU2002212958A1 (enExample) |
| IL (2) | IL154763A0 (enExample) |
| WO (1) | WO2002021075A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100946400B1 (ko) * | 2008-02-19 | 2010-03-08 | 넥스타테크놀로지 주식회사 | 위상천이방식을 이용한 양방향 모아레 투영장치 |
Families Citing this family (92)
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| IL138552A (en) | 2000-09-19 | 2006-08-01 | Nova Measuring Instr Ltd | Lateral shift measurement using an optical technique |
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| US6898537B1 (en) | 2001-04-27 | 2005-05-24 | Nanometrics Incorporated | Measurement of diffracting structures using one-half of the non-zero diffracted orders |
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| US6713753B1 (en) | 2001-07-03 | 2004-03-30 | Nanometrics Incorporated | Combination of normal and oblique incidence polarimetry for the characterization of gratings |
| US7061615B1 (en) | 2001-09-20 | 2006-06-13 | Nanometrics Incorporated | Spectroscopically measured overlay target |
| KR20050035153A (ko) * | 2001-10-10 | 2005-04-15 | 액센트 옵티칼 테크놀로지스 인코포레이티드 | 단면 분석법에 의한 초점 중심의 결정 |
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| SG125926A1 (en) * | 2002-11-01 | 2006-10-30 | Asml Netherlands Bv | Inspection method and device manufacturing method |
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| US7089528B2 (en) * | 2003-03-11 | 2006-08-08 | International Business Machines Corporation | Methods and systems for estimating reticle bias states |
| US7119893B2 (en) * | 2003-04-10 | 2006-10-10 | Accent Optical Technologies, Inc. | Determination of center of focus by parameter variability analysis |
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| TW201923332A (zh) | 2017-10-10 | 2019-06-16 | 荷蘭商Ａｓｍｌ荷蘭公司 | 度量衡方法和設備、電腦程式及微影系統 |
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| IL123727A (en) | 1998-03-18 | 2002-05-23 | Nova Measuring Instr Ltd | Method and apparatus for measurement of patterned structures |
| US6643557B1 (en) | 2000-06-09 | 2003-11-04 | Advanced Micro Devices, Inc. | Method and apparatus for using scatterometry to perform feedback and feed-forward control |
| US6429930B1 (en) * | 2000-09-06 | 2002-08-06 | Accent Optical Technologies, Inc. | Determination of center of focus by diffraction signature analysis |
-
2001
- 2001-09-04 US US09/946,104 patent/US6429930B1/en not_active Expired - Lifetime
- 2001-09-05 JP JP2002525446A patent/JP2004508559A/ja active Pending
- 2001-09-05 AU AU2002212958A patent/AU2002212958A1/en not_active Abandoned
- 2001-09-05 KR KR10-2003-7003355A patent/KR20030040446A/ko not_active Abandoned
- 2001-09-05 EP EP01981304A patent/EP1332330A4/en not_active Withdrawn
- 2001-09-05 IL IL15476301A patent/IL154763A0/xx active IP Right Grant
- 2001-09-05 WO PCT/US2001/027657 patent/WO2002021075A1/en not_active Ceased
-
2002
- 2002-07-23 US US10/202,429 patent/US6606152B2/en not_active Expired - Lifetime
-
2003
- 2003-03-05 IL IL154763A patent/IL154763A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100946400B1 (ko) * | 2008-02-19 | 2010-03-08 | 넥스타테크놀로지 주식회사 | 위상천이방식을 이용한 양방향 모아레 투영장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| US6429930B1 (en) | 2002-08-06 |
| WO2002021075A1 (en) | 2002-03-14 |
| US6606152B2 (en) | 2003-08-12 |
| EP1332330A1 (en) | 2003-08-06 |
| US20030002031A1 (en) | 2003-01-02 |
| EP1332330A4 (en) | 2006-05-10 |
| US20020041373A1 (en) | 2002-04-11 |
| IL154763A0 (en) | 2003-10-31 |
| AU2002212958A1 (en) | 2002-03-22 |
| JP2004508559A (ja) | 2004-03-18 |
| IL154763A (en) | 2006-12-10 |
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